JPS6149425A - Polishing method of gaas substrate - Google Patents

Polishing method of gaas substrate

Info

Publication number
JPS6149425A
JPS6149425A JP17205284A JP17205284A JPS6149425A JP S6149425 A JPS6149425 A JP S6149425A JP 17205284 A JP17205284 A JP 17205284A JP 17205284 A JP17205284 A JP 17205284A JP S6149425 A JPS6149425 A JP S6149425A
Authority
JP
Japan
Prior art keywords
substrate
etching
water
gaas
sliced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17205284A
Other languages
Japanese (ja)
Inventor
Toshiya Toyoshima
豊島　敏也
Konichi Nakamura
中村　渾一
Hiroki Akiyama
弘樹 秋山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP17205284A priority Critical patent/JPS6149425A/en
Publication of JPS6149425A publication Critical patent/JPS6149425A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To readily obtain a GaAs mirror-surface substrate having high flatness by solving to remove the portion thicker than 0.5mum or larger with solution of NH3 water, H2O2 water and water. CONSTITUTION:A GaAs having a sliced surface or a polished surface by a lap material of 5mum of particle size immediately after cut from a crystal ingot is removed at the portion thicker than 0.5mum or larger with an etchant made of 2vol. of NH3 water, 1vol. of H2O2 water and 5vol. of water. However, the irregularity in the etching amount is presented if 100mum or larger. The composition is selected according to the etching time and the number to be treated. When treated at 40 deg.C for 5sec. to remove 0.5mum, a mirror-surface substrate having high flatness is, for example, obtained from a GaAs substrate sliced from an ingot. Even if the crystal strain due to working is thick, the entire surface of the substrate is uniformly removed to obtain a substrate having preferable flatness.

Description

【発明の詳細な説明】 ［発明の背…と目的］ 本発明はＱ　ａ　Ａ　Ｓ基板の研磨方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Background and Objectives of the Invention] The present invention relates to a method for polishing a Q A S substrate.

ＧａＡｓ基板は、一般に一方の表面を鏡面研磨した後に
、この鏡面上に各秤半尋体デバイスが形成される。デバ
イス形成上の手段として露光工程が必要であるが、露光
焦点が基板面内に均一・に得るために、基板に対しで高
い平坦度が要求される。Generally, one surface of the GaAs substrate is mirror-polished, and then each scale half body device is formed on this mirror surface. An exposure process is necessary as a means of forming a device, and in order to obtain a uniform exposure focus within the plane of the substrate, a high level of flatness is required of the substrate.

一方ＧａＡｓ単結晶インゴットから薄く切り出されたＧ
ａＡｓ基板（アズスライス基板）の切断面近傍は切断時
の応力による結晶歪が存在し、基板は大きく湾曲してい
る。このような湾曲はエツチングにより表面近傍の結晶
歪を除去することにより解消緩和できることが広く知ら
れている。On the other hand, G is thinly cut from a GaAs single crystal ingot.
There is crystal distortion near the cut surface of an aAs substrate (as-sliced substrate) due to stress during cutting, and the substrate is largely curved. It is widely known that such curvature can be alleviated by removing crystal strain near the surface by etching.

従来、このエツチングには硫酸と過酸化水素水と水とか
らなる溶液が使用されていたが、このエツチング液とＧ
ａＡｓとの化学反応は拡散律速で進行する反応であるた
め、基板表面へのエツチング液中の反応イオンの供給及
びエツチング液とＧａＡｓとの反応生成物の溶液バルク
中への拡散が、ＧａＡＳＩ板の表面全体に均一・に行な
われない場合は、基板表面のエツチング液度が不均一・
になり、エツチングｍの不均一が生じる。この結果、エ
ツチングを実施した而には目視により明らかに判別がで
きる程の光沢のむらが現われ、基板の厚さも面内不均一
・になる。このような現象は結晶歪の除去には効果があ
るものの局所的な凹凸、ゆがみ。Conventionally, a solution consisting of sulfuric acid, hydrogen peroxide, and water was used for this etching, but this etching solution and G
Since the chemical reaction with aAs is a reaction that progresses at a diffusion rate, the supply of reactive ions in the etching solution to the substrate surface and the diffusion of the reaction product between the etching solution and GaAs into the bulk of the solution are important for the GaASI plate. If the etching is not done uniformly over the entire surface, the etching liquid level on the substrate surface may be uneven or
This results in non-uniform etching m. As a result, after etching, unevenness of gloss appears that can be clearly discerned by visual inspection, and the thickness of the substrate also becomes non-uniform within the surface. Although this phenomenon is effective in removing crystal distortion, it causes local unevenness and distortion.

厚さ不拘−等デバイス形成Ｊ大きな障害となっている。Thickness-independent device formation has become a major obstacle.

このような硫酸、過酸化水素水、水からなるエツチング
液はＧａＡｓ基板の湾曲を緩和する目的に対して不十分
かつ不適当である。Such an etching solution consisting of sulfuric acid, hydrogen peroxide, and water is insufficient and inappropriate for the purpose of relaxing the curvature of the GaAs substrate.

本発明は、以上の点に鑑みなされたものであり、インゴ
ットからスライスしたＧａＡ３基板の表面を一様にエツ
チングすることを可能としたＧａＡｓ基板の研磨方法を
提供することを目的とするものである。The present invention has been made in view of the above points, and it is an object of the present invention to provide a method for polishing a GaAs substrate that makes it possible to uniformly etch the surface of a GaA3 substrate sliced from an ingot. .

［発明の概要］ ザなわち、本発明は加工後のＧａＡｓ基板の表面をエツ
チング液でエツチングし、次いで前記表面の一方側を研
磨するＧａＡｓ基板の１ｉＩｌ磨方法において、前記エ
ツチング液が、アンモニア水、過酸化水素水および水か
らなる溶液ど形成されたものであるこくとを特徴とする
ものであり、これに（よってエツチング液は、アンモニ
ア水、過酸化水素水および水から形成されるようになる
。[Summary of the Invention] That is, the present invention provides a method for polishing a GaAs substrate in which the surface of a processed GaAs substrate is etched with an etching liquid, and then one side of the surface is polished. The etching solution is characterized by a body formed from a solution consisting of aqueous hydrogen peroxide and water (thereby, the etching solution is formed from aqueous ammonia, aqueous hydrogen peroxide and water). Become.

発明者等は、どのようにすれば表面が−・様にエツチン
グできるかを検討した。エツチング液にアンモニア水、
過酸化水素水および水からなる溶液を用いて検討した。The inventors investigated how the surface could be etched in a similar manner. Etching solution with ammonia water,
A study was conducted using a solution consisting of hydrogen peroxide and water.

その結果、この溶液はＧａＡＳとの反応が反応律速で進
行するため、基板表面へのエツチング液中の反応成分の
供給速度及び反応生成物のエツチング液中への拡散速度
によらず、エツチングはＧａＡｓ基板全面に対して均一
に進行することが確かめられた。そして、エツチングに
よる溶解除去量は結晶歪を除去するのに必要なけであれ
ばよいことが確かめられた。すなわち縦軸に湾曲の大き
さをとり、横軸にエツチングによる表面からの溶解除去
量をとりで溶解除去量と湾曲の大きさとの関係が示され
ている第１図に示されているように、結晶インゴットか
ら切断した直後のアズスライス面の場合及び粒径５μｍ
のラップ材によるラップ研磨面の場合も０．５μｍ除去
すれば十分である。このように、このエツチング溶液に
よるエツチングは結晶インゴットから切断した直後のア
ズスライス面に対して行なってもよく、う、ツブ研磨を
行なった面に対して行なってもよく、前者はスライスに
よる結晶歪の除去に硬化があり、後者はラップ研磨によ
る結晶歪の除去に硬化のあることが判った。そして、そ
のエツチング量は第１図に示されているように１００μ
ｍ以上になると基板面内のエツチング量の不均一が現わ
れるので、通常１００μｍ以下で実施することが望まし
く、またエツチング液はアンモニア水（２容）、過酸化
水素水（１容）、水（５容）が適正であるが、温痩、エ
ツチング時間、エツチングされる基板の枚数等により広
い組成で使用できること等が確かめられた。そこで本発
明ではエツチング液が、アンモニア水、過酸化水素水お
よび水からなる溶液で形成されるように１ノた。このよ
うにすることによりインボッチからスライスし１〔Ｑａ
／！１．ｓ基板の表面を一様にエツチングすることを可
能としたＧａＡｓ基板の研磨方法を得ることを可能とし
たものである。As a result, the reaction between this solution and GaAs proceeds at a rate-determined rate, so that the etching is not dependent on the supply rate of the reaction components in the etching solution to the substrate surface and the diffusion rate of the reaction product into the etching solution. It was confirmed that the process progressed uniformly over the entire surface of the substrate. It was also confirmed that the amount removed by etching by dissolution is not necessary as long as it is not necessary to remove crystal distortion. In other words, the vertical axis represents the amount of curvature, and the horizontal axis represents the amount dissolved and removed from the surface by etching, as shown in Figure 1, which shows the relationship between the amount removed by dissolution and the amount of curvature. , in the case of an as-sliced surface immediately after cutting from a crystal ingot, and a grain size of 5 μm
In the case of a surface lapped with a lapping material, it is sufficient to remove 0.5 μm. As described above, etching with this etching solution may be performed on the as-sliced surface immediately after cutting from the crystal ingot, or may be performed on the surface that has been polished. It was found that hardening occurred in the removal of the latter, and hardening occurred in the removal of crystal distortion by lapping. The amount of etching is 100μ as shown in Figure 1.
If the etching amount exceeds 100 μm, non-uniform etching will occur within the surface of the substrate, so it is usually desirable to perform the etching at a depth of 100 μm or less. It was confirmed that the composition can be used in a wide range of compositions depending on the temperature, etching time, number of substrates to be etched, etc. Therefore, in the present invention, the etching solution was formed from a solution consisting of aqueous ammonia, aqueous hydrogen peroxide, and water. By doing this, you can slice from the inbotch to 1 [Qa
/! 1. This makes it possible to obtain a method for polishing a GaAs substrate that makes it possible to uniformly etch the surface of the s-substrate.

［実施例］ 以下、実施例に基づいて本発明を説明する。本実施例で
はエツチング液をアンモニア水、過酸化水素水および水
からなる溶液で形成した。そしてエツチングによりＧａ
Ａｓ基板の表面からの溶解除去量を０．５μｍ以下とし
た。このようにすることによりエツチング液はアンモニ
ア水、過酸化水素水および水からなる溶液で形成される
ようになって、インゴットからスライスしたＧａＡｓ基
板は均一にエツチングされるようになり、インゴットか
らスライスしたＱ　ａ　Ａ　、Ｓ基板の表面を一様にエ
ツチングすることを可能としたＧａＡｓ基板の研磨方法
を得ることができる。[Examples] The present invention will be described below based on Examples. In this example, the etching solution was formed from a solution consisting of aqueous ammonia, aqueous hydrogen peroxide, and water. Then, by etching, Ga
The amount removed by dissolution from the surface of the As substrate was set to 0.5 μm or less. By doing this, the etching solution is formed of a solution consisting of aqueous ammonia, hydrogen peroxide, and water, and the GaAs substrate sliced from the ingot is etched uniformly. It is possible to obtain a method for polishing a GaAs substrate that makes it possible to uniformly etch the surface of a Q a A,S substrate.

すなわち高圧引上法により作成したアンドープＧａへＳ
単結晶インゴットからスライスした直径７６Ｍ、厚さ６
００μｍのＧａＡｓ基板を用いたが、スライス後のＱａ
７！１．ｓ基板の湾曲は干渉縞で示されている第２図に
示されているように約２５μｍ、ｌ板面内の厚さは１２
μｍである。このようなＱａＡｓｌ板３００から５００
枚について従来の研磨方法と比較検討した。またラップ
研磨は粒径５μｍの砥粒を用いて１００μｍ行ない、鏡
面研磨はアルカリ性溶液を用い３０μｍ行なった。In other words, S is applied to undoped Ga prepared by high-pressure pulling method.
Diameter 76M, thickness 6 sliced from a single crystal ingot
A GaAs substrate with a thickness of 00 μm was used, but the Qa after slicing
7!1. The curvature of the s-substrate is approximately 25 μm as shown in Figure 2, which is indicated by interference fringes, and the thickness within the plane of the 1-board is 12 μm.
It is μm. QaAsl board 300-500 like this
A comparison study was made with conventional polishing methods. Lap polishing was performed to a depth of 100 μm using abrasive grains having a grain size of 5 μm, and mirror polishing was performed to a depth of 30 μm using an alkaline solution.

そして、鏡面研磨した基板の湾曲の大きさの測定は基板
の中央部を直径１０＃ｌＩＩ＋の真空ヂ１？ツクで吸引
保持し、表面に単色光を照射し干渉縞として検出した。The degree of curvature of the mirror-polished substrate was measured by vacuuming the center of the substrate with a diameter of 10#lII+. The material was held under suction with a needle, and the surface was irradiated with monochromatic light, which was detected as interference fringes.

以下に比較検討結果を述べる。The results of the comparative study are described below.

比較例としてインゴットからスライスしたＧａＡｓ基板
の両面を硫酸（５容）、過酸化水素水（１容）、水（１
容）からなるエツチング液を用い、５０℃で２分間エツ
チングした。この際のエツチングによる基板表面からの
溶解除去量は、基板周辺部が９μｍ、中央部が４μｍで
あり、基板は中央部が厚く周辺部が薄くなった。この基
板をステンレス製の平板に熱溶融性のワックスを用いて
加圧接着し、一方の表面をラップ研磨及び鏡面研磨を行
なって湾曲を測定したところ、基板は第３図に示されて
いるように皿状に湾曲しており、湾曲の大ぎさは１０μ
ｍの大ぎがった。As a comparative example, both sides of a GaAs substrate sliced from an ingot were treated with sulfuric acid (5 volumes), hydrogen peroxide (1 volume), and water (1 volume).
Etching was performed for 2 minutes at 50° C. using an etching solution consisting of The amount removed by dissolution from the surface of the substrate by etching was 9 μm at the periphery of the substrate and 4 μm at the center, making the substrate thicker at the center and thinner at the periphery. This substrate was bonded under pressure to a stainless steel flat plate using hot-melt wax, and one surface was lapped and mirror-polished and the curvature was measured, and the substrate was as shown in Figure 3. It is curved into a dish shape, and the magnitude of the curve is 10μ.
m's large size.

実施例１としてインゴットからスライスしたＧａＡｓ基
板の両面をアンモニア水（２容）、過酸化水素水（１容
）および水（５容）からなるエツチング液を用い、４０
℃で５秒間エツチングした。In Example 1, both sides of a GaAs substrate sliced from an ingot were etched using an etching solution consisting of aqueous ammonia (2 volumes), hydrogen peroxide (1 volume), and water (5 volumes).
Etching was performed at ℃ for 5 seconds.

この際のエツチングによる基板表面からの溶解除去量は
基板全面にわたり０．５μｍであった。この基板を比較
例のそれと同様に鏡面研磨をしたところ、基板の湾曲は
２μｍ未満のものが６０％。The amount removed by dissolution from the substrate surface by etching at this time was 0.5 μm over the entire surface of the substrate. When this substrate was mirror-polished in the same manner as the comparative example, 60% of the substrates had curvature of less than 2 μm.

２から４μｍのものが４０％で第４図に示されているよ
うな高平坦度な基板が得られた。A highly flat substrate as shown in FIG. 4 was obtained with 40% having a diameter of 2 to 4 μm.

実施例２としてインゴットからスライスしたＧａＡｓ基
板を実施例１と同様のエツチング液を用い、４０℃で３
分間エツチングした。この際エツチングによる基板表面
からの溶解除去量は基板周辺部が１５μｍ、中央部が１
３μｍであった。この基板を実施例１と同様に鏡面研磨
をしたところ、基板の湾曲は２μｍ未満のものが４５％
、２がら４μｍのものが５５％と高平坦度な基板が得ら
れた。As Example 2, a GaAs substrate sliced from an ingot was etched at 40°C for 30 minutes using the same etching solution as in Example 1.
Etched for a minute. At this time, the amount removed by dissolution from the substrate surface by etching is 15 μm at the periphery of the substrate and 1 μm at the center.
It was 3 μm. When this substrate was mirror-polished in the same manner as in Example 1, the curvature of the substrate was 45% less than 2 μm.
A substrate with a high flatness of 55% was obtained with a thickness of 2 to 4 μm.

実施例３としてインゴットからスライスしたＧａＡｓ基
板の両面で実施例１と同様のエツチング液を用い、４０
℃で２秒間エツチングした。この際のエツチングによる
基板表面からの溶解除去量は基板全面にわたり０．３μ
ｍであった。そして、この基板は第５図に示されている
ように大体鞍型に１０μｍ湾曲していた。この基板を実
施例１と同様に鏡面研磨をしたところ、基板は鞍型１０
から１５μｍ湾曲していた。これは基板表面からの溶解
除去量が少なかったためである。As Example 3, the same etching solution as in Example 1 was used on both sides of a GaAs substrate sliced from an ingot.
Etching was performed at ℃ for 2 seconds. At this time, the amount removed by dissolution from the substrate surface due to etching was 0.3μ over the entire surface of the substrate.
It was m. As shown in FIG. 5, this substrate was curved approximately 10 μm into a saddle shape. When this substrate was mirror-polished in the same manner as in Example 1, the substrate had a saddle shape of 10
It was curved by 15 μm. This is because the amount removed by dissolution from the substrate surface was small.

このように本実施例によれば平坦度の高いＧａＡＳ鏡面
基板が再現性よく、しかも容易に得ることができるのみ
ならず、加工による結晶歪層が厚い場合にはエツチング
量を増加する必要４があるが、この場合にもエツチング
は基板全面に均一に行なわれ、平１σ性によい基板を４
ｑることもができる。As described above, according to this example, not only can a GaAS mirror-finished substrate with high flatness be easily obtained with good reproducibility, but also it is not necessary to increase the amount of etching when the crystal strain layer due to processing is thick. However, in this case as well, etching is performed uniformly over the entire surface of the substrate, and the substrate with good flat 1σ properties is
You can also do q.

なお、第２図〜第５図の干渉縞は、基板にＨｅ−Ｎｅガ
スレーザよりレーザ光を照射し、表面の凹凸により光が
乱れる現象が撮影した・ｂのである。The interference fringes shown in FIGS. 2 to 5 were photographed by irradiating the substrate with laser light from a He--Ne gas laser and photographing the phenomenon in which the light is disturbed due to surface irregularities.

［発明の効果］ 上述のように本発明はインゴットからスライスしたＧａ
Ａｓ基板の表面が一様にコーツチングされるようになっ
て、インゴットからスライスしたＧａＡｓ１Ｇ板の表面
を一様にエツチングすることを可能としたＧａＡｓ基板
の研磨方法を得ることができる。[Effect of the invention] As described above, the present invention provides Ga sliced from an ingot.
Since the surface of the As substrate is uniformly coated, it is possible to obtain a method for polishing a GaAs substrate that makes it possible to uniformly etch the surface of a GaAs 1G plate sliced from an ingot.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、インゴットからスライスしたＧａＡｓ基板の
エツチングによる基板表面からの溶解除去量と基板の湾
曲の大きさとの関係を示す特性図。 第２図はインゴットからスライスしたＧａＡｓ基板の湾
曲を示′ツ干渉縞写真、１３図は従来のＧａＡｓ基板の
研磨方法によりＧａΔＳ鏡面基板の湾曲を示す干渉縞写
真、第４図は本発明のＧａＡｓ基板の研磨方法の一実施
例によりＧａＡＳ鏡面基板の湾曲を示す干渉縞写真、第
５図は本発明のＧａＡｓ基板の研磨方法の他の実施例に
よるＧａＡＳ鏡而基板面湾曲を示ず干渉縞写真である。 多２同　　　　　　　　−第３囮 ′！ｈ４同　　　　　　　　　　第５已手続補正、書く
方式）１Ｂ ５９．１２゜ 昭和　　　年　　　月　　　日FIG. 1 is a characteristic diagram showing the relationship between the amount removed by dissolution from the surface of a GaAs substrate sliced from an ingot by etching and the degree of curvature of the substrate. Figure 2 is an interference fringe photograph showing the curvature of a GaAs substrate sliced from an ingot, Figure 13 is an interference fringe photograph showing the curvature of a GaΔS mirror substrate obtained by a conventional GaAs substrate polishing method, and Figure 4 is an interference fringe photograph showing the curvature of a GaAs substrate sliced from an ingot. FIG. 5 is an interference fringe photograph showing the curvature of a GaAS mirror substrate according to one embodiment of the method for polishing a substrate, and FIG. It is. Ta 2 Do - 3rd decoy'! h4 Same 5th procedural amendment, writing method) 1B 59.12゜Showa year month day

Claims (2)

【特許請求の範囲】[Claims] （１）加工後のＧａＡｓ基板の表面をエッチング液でエ
ッチングし、次いで前記表面の一方側を鏡面研磨するＧ
ａＡｓ基板の研磨方法において、前記エッチング液が、
アンモニア水、過酸化水素水および水からなる溶液で形
成されたものであることを特徴とするＧａＡｓ基板の研
磨方法。(1) G
In the method for polishing an aAs substrate, the etching solution comprises:
A method for polishing a GaAs substrate, characterized in that it is formed from a solution consisting of aqueous ammonia, aqueous hydrogen peroxide, and water. （２）前記エッチングによる前記ＧａＡｓ基板の表面か
らの溶解除去量が０．５μｍ以上である特許請求の範囲
第１項記載のＧａＡｓ基板の研磨方法。(2) The method for polishing a GaAs substrate according to claim 1, wherein the amount removed by dissolution from the surface of the GaAs substrate by the etching is 0.5 μm or more.
JP17205284A 1984-08-17 1984-08-17 Polishing method of gaas substrate Pending JPS6149425A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17205284A JPS6149425A (en) 1984-08-17 1984-08-17 Polishing method of gaas substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17205284A JPS6149425A (en) 1984-08-17 1984-08-17 Polishing method of gaas substrate

Publications (1)

Publication Number Publication Date
JPS6149425A true JPS6149425A (en) 1986-03-11

Family

ID=15934639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17205284A Pending JPS6149425A (en) 1984-08-17 1984-08-17 Polishing method of gaas substrate

Country Status (1)

Country Link
JP (1) JPS6149425A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01213470A (en) * 1988-02-18 1989-08-28 Tajima:Kk Formation of uneven pattern on carpet

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155047A (en) * 1976-06-18 1977-12-23 Hitachi Cable Ltd Grinding method of semiconductor crystal wafer
JPS5640499A (en) * 1979-09-10 1981-04-16 Shinryo Air Conditioning Co Ltd Method and apparatus for concentrating sludge
JPS57196723A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> Polishing method for gallium arsenide

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155047A (en) * 1976-06-18 1977-12-23 Hitachi Cable Ltd Grinding method of semiconductor crystal wafer
JPS5640499A (en) * 1979-09-10 1981-04-16 Shinryo Air Conditioning Co Ltd Method and apparatus for concentrating sludge
JPS57196723A (en) * 1981-05-29 1982-12-02 Nippon Telegr & Teleph Corp <Ntt> Polishing method for gallium arsenide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01213470A (en) * 1988-02-18 1989-08-28 Tajima:Kk Formation of uneven pattern on carpet

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