JPS6144435Y2 - - Google Patents
Info
- Publication number
- JPS6144435Y2 JPS6144435Y2 JP1716181U JP1716181U JPS6144435Y2 JP S6144435 Y2 JPS6144435 Y2 JP S6144435Y2 JP 1716181 U JP1716181 U JP 1716181U JP 1716181 U JP1716181 U JP 1716181U JP S6144435 Y2 JPS6144435 Y2 JP S6144435Y2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- sealed
- semiconductor device
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011347 resin Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000007789 sealing Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- 239000008188 pellet Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【考案の詳細な説明】
本考案は樹脂封止型半導体装置に関する。リー
ドフレームを有する半導体装置の製造工程の一つ
に、リードフレームの素子配設部および内部リー
ド部を樹脂にて封止する樹脂モールド工程があ
る。[Detailed Description of the Invention] The present invention relates to a resin-sealed semiconductor device. One of the manufacturing processes for a semiconductor device having a lead frame is a resin molding process in which the element placement portion and internal lead portion of the lead frame are sealed with resin.
この工程は、第1図で示すように、素子配設部
1、内部リード部2および外部リード部3を等厚
に形成たリードフレーム4に半導体ペレツト5を
接合(マウント)し、該半導体ペレツト5の電極
(図示せず)と内部リード2a(第2図)とをワ
イヤ6を用いて結線した後、該リードフレーム4
を金型(図示せず)に移送し、そこで熱硬化性等
の樹脂を用いて上記素子配設部1および内部リー
ド部2を樹脂7にてモールドすることによつてな
されている。 In this step, as shown in FIG. 1, a semiconductor pellet 5 is bonded (mounted) to a lead frame 4 in which an element mounting portion 1, an inner lead portion 2, and an outer lead portion 3 are formed with equal thickness. After connecting the electrode 5 (not shown) and the internal lead 2a (FIG. 2) using the wire 6, the lead frame 4
is transferred to a mold (not shown), where the element placement portion 1 and internal lead portion 2 are molded with resin 7 using a thermosetting resin or the like.
しかしながら、かかる樹脂封止型半導体装置に
おいては、上述の如く等厚のリードフレームが使
用されていることから次のような難点がある。 However, in such a resin-sealed semiconductor device, since a lead frame of equal thickness is used as described above, there are the following difficulties.
即ち、樹脂モールド時に、内部リード部から外
部リード部に向つて流れやすく、これが樹脂モー
ルド後バリとなり、その後の工程において必要と
される半田付性を損なつたり、また電気的接触を
著しく低下させる。 That is, during resin molding, it tends to flow from the inner lead part to the outer lead part, and this becomes burrs after the resin molding, impairing the solderability required in subsequent steps, and significantly reducing electrical contact. .
更に、リードフレームの上部および下部にモー
ルドされる樹脂の体積が違うため、この影響から
樹脂硬化後に樹脂封止部内部に変形を生じ半導体
装置の特性劣化を招く。 Furthermore, since the volume of the resin molded on the upper and lower parts of the lead frame is different, this effect causes deformation inside the resin sealing part after the resin hardens, resulting in deterioration of the characteristics of the semiconductor device.
また、樹脂封止後に、リードフレームと樹脂と
のパーテイングライン(境界)に隙間が生じた場
合に、水分等が容易に浸入し、半導体装置の特性
劣化を招く。 Furthermore, if a gap is created at the parting line (boundary) between the lead frame and the resin after resin sealing, moisture etc. can easily infiltrate, leading to deterioration of the characteristics of the semiconductor device.
本考案はかかる難点を解消するためになされた
もので、リードフレームの素子配設部および内部
リード部を樹脂にて封止してなる樹脂封止型半導
体装置において、前記リードフレームは、樹脂封
止部の外側に囲繞壁を有することを特徴とする樹
脂封止型半導体装置を提供するものである。 The present invention has been devised to solve this problem, and includes a resin-sealed semiconductor device in which the element placement portion and internal lead portion of a lead frame are sealed with resin. The present invention provides a resin-sealed semiconductor device characterized by having a surrounding wall on the outside of a sealing portion.
以下図面に基づいて本考案の一実施例を詳細に
説明する。 An embodiment of the present invention will be described in detail below based on the drawings.
本考案に係る樹脂封止型半導体装置は、第3図
に示すように、囲繞壁8a,8bを有するリード
フレーム8の素子配設部9に半導体ペレツト10
を接合し、該半導体ペレツト10の電極(図示せ
ず)と内部リード11a(第4図)とをワイヤ1
2等で結線し、該リードフレーム8の素子配設部
9および内部リード部11を熱硬化性等の樹脂1
3を用いてモールドしたものである。 As shown in FIG. 3, the resin-sealed semiconductor device according to the present invention includes semiconductor pellets 10 in an element mounting portion 9 of a lead frame 8 having surrounding walls 8a and 8b.
The electrodes (not shown) of the semiconductor pellet 10 and the internal leads 11a (FIG. 4) are connected to the wire 1.
2, etc., and the element placement part 9 and internal lead part 11 of the lead frame 8 are covered with thermosetting resin 1.
It was molded using 3.
ここで、樹脂封止型半導体装置として囲繞壁8
a,8bを有するリードフレーム8を用いた理由
は次の通りである。 Here, the surrounding wall 8 is used as a resin-sealed semiconductor device.
The reason for using the lead frame 8 having a and 8b is as follows.
即ち、樹脂モールド時に、内部リード部11か
ら外部リード部14に向つて樹脂が流れるのを囲
繞壁8a,8bにて食い止めることができる。 That is, during resin molding, the surrounding walls 8a and 8b can prevent the resin from flowing from the internal lead part 11 toward the external lead part 14.
更に、囲繞壁8a,8bの高さを変えることに
より、リードフレーム8の上部および下部にモー
ルドされる樹脂の体積の相違から生じる樹脂封止
部内部の変形を緩和できる。 Further, by changing the heights of the surrounding walls 8a and 8b, deformation inside the resin sealing portion caused by a difference in volume of resin molded into the upper and lower parts of the lead frame 8 can be alleviated.
また、囲繞壁8a,8bにより、リードフレー
ム8と樹脂のパーテイングラインから浸入する水
分等の素子配設部9への到達経路を長くすること
ができる。 Further, the surrounding walls 8a and 8b can lengthen the path for moisture, etc. that enters from the parting line between the lead frame 8 and the resin to reach the element placement portion 9.
以上のように本考案は、リードフレームに囲繞
壁を有するので、バリの発生、樹脂封止部内部の
変形および水分等の素子配設部への到達を緩和す
ることができ、したがつて半導体装置の信頼性お
よび歩留の向上を図ることができその実用的価値
は頗る甚大である。 As described above, in the present invention, since the lead frame has a surrounding wall, it is possible to reduce the occurrence of burrs, deformation inside the resin sealing part, and moisture reaching the element mounting part, and therefore, the semiconductor The reliability and yield of the device can be improved, and its practical value is enormous.
第1図、第2図は従来の樹脂封止型半導体装置
の説明図、第3図、第4図は本考案に係る樹脂封
止型半導体装置の説明図である。
1,9……素子配設部、2,11……内部リー
ド部、4,8……リードフレーム、8a,8b…
…囲繞壁、7,13……樹脂。
1 and 2 are explanatory views of a conventional resin-sealed semiconductor device, and FIGS. 3 and 4 are explanatory views of a resin-sealed semiconductor device according to the present invention. 1, 9...Element placement part, 2, 11...Internal lead part, 4, 8...Lead frame, 8a, 8b...
...Enclosing wall, 7,13...resin.
Claims (1)
部を樹脂にて封止してなる樹脂封止型半導体装置
において、前記リードフレームは、樹脂封止部の
外側にこの樹脂封止部を囲むよう、前記内部リー
ド部より厚く形成された囲繞壁を有することを特
徴とする樹脂封止型半導体装置。 In a resin-sealed semiconductor device in which an element placement portion and an internal lead portion of a lead frame are sealed with a resin, the lead frame has the resin-sealed portion surrounded by the resin-sealed portion on the outside of the resin-sealed portion. A resin-sealed semiconductor device characterized by having a surrounding wall that is thicker than an internal lead portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1716181U JPS6144435Y2 (en) | 1981-02-12 | 1981-02-12 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1716181U JPS6144435Y2 (en) | 1981-02-12 | 1981-02-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57132461U JPS57132461U (en) | 1982-08-18 |
JPS6144435Y2 true JPS6144435Y2 (en) | 1986-12-15 |
Family
ID=29815134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1716181U Expired JPS6144435Y2 (en) | 1981-02-12 | 1981-02-12 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6144435Y2 (en) |
-
1981
- 1981-02-12 JP JP1716181U patent/JPS6144435Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS57132461U (en) | 1982-08-18 |
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