JPS6142843A - Device for cooling substrate - Google Patents
Device for cooling substrateInfo
- Publication number
- JPS6142843A JPS6142843A JP16154584A JP16154584A JPS6142843A JP S6142843 A JPS6142843 A JP S6142843A JP 16154584 A JP16154584 A JP 16154584A JP 16154584 A JP16154584 A JP 16154584A JP S6142843 A JPS6142843 A JP S6142843A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- holder
- thermal conductivity
- elasticity
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体の製造に使用されるシリコンウェハ等の
基板を冷却する装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus for cooling a substrate such as a silicon wafer used in the manufacture of semiconductors.
（従来の技術）
一般に真空室内でこの種基板にイオン注入等の処理を施
すと発熱して基板が損傷する危険があるので該基板を冷
却水を循環させた基板ホルダで保持することが行なわれ
ている。(Prior art) Generally, when ion implantation or other processing is performed on this type of substrate in a vacuum chamber, there is a risk of heat generation and damage to the substrate, so the substrate is held in a substrate holder with circulating cooling water. ing.
この場合、基板は熱により変形を生じ基板ホルダとの接
触が離れて冷却性が悪化するので基板ホルダの表面にシ
リコンラバーのクッション部とそれを覆うテフロン薄膜
を設け、これに基板を当接させることにより基板に変形
が生じても離れることなく冷却出来るようにしている。In this case, the substrate deforms due to heat and loses contact with the substrate holder, deteriorating its cooling performance. Therefore, a silicone rubber cushion and a Teflon thin film covering it are provided on the surface of the substrate holder, and the substrate is brought into contact with this. This allows the substrate to be cooled without separating even if the substrate is deformed.
（発明が解決しようとする問題点）
シリコンラバーはその弾力性が実際の使用条件下で経時
的に損なわれ基板の変形に追従して当接し得なくなる欠
点があり、また近時のように基板の処理のために大電流
、高電圧が使用されると基板の発熱量が多くなり、その
熱流束がＩＷ／ｃｌＩにも達すると接触熱伝達係数、熱
伝性、耐熱性の乏しいテフロン薄膜で覆われたシリコン
ラバーの使用が困難になる。(Problems to be Solved by the Invention) Silicon rubber has the disadvantage that its elasticity is lost over time under actual usage conditions, making it impossible to make contact with the deformation of the substrate. When large currents and high voltages are used for processing, the amount of heat generated by the substrate increases, and when the heat flux reaches IW/clI, the Teflon thin film has poor contact heat transfer coefficient, thermal conductivity, and heat resistance. Covered silicone rubber becomes difficult to use.
本発明は主として発熱量の多い状況で処理される基板の
冷却に適した耐久性の良い冷却装置を提供することを目
的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a highly durable cooling device that is suitable for cooling substrates that are processed under conditions that generate a large amount of heat.
（問題点を解決するための手段）
本発明では、真空室内で処理される基板を冷動水の循環
等により冷却された基板ホルダにより保持するようにし
たものに於て、該基板に当接する基板ホルダの表面に弾
力性と熱良導性を備えた細線を多数植設し且つ植設され
た細線群の見掛けのショア硬度をシリコンラバーと同程
度になるようにした。(Means for Solving the Problems) In the present invention, in a device in which a substrate to be processed in a vacuum chamber is held by a substrate holder cooled by circulation of chilled water, etc., the substrate is brought into contact with the substrate. A large number of fine wires having elasticity and good thermal conductivity are implanted on the surface of the substrate holder, and the apparent shore hardness of the implanted fine wires is made to be on the same level as silicon rubber.
（作用）
基板は基板ホルダの表面に保持され、真空室内に於てイ
オン注入等の処理が施されるが、該ホルダの表面には弾
力性と熱良導性を備えた細線が植設されているので基板
の処理に伴なう発熱量は細線を介して冷却された基板ホ
ルダに伝えられ、基板が冷却されると共に植設された細
線群はその見掛けのショア硬度が柔らかいシリコンラバ
ーと同程度であるので基板の変形に適合して各細線が基
板に当接し、冷却性が良好になる。(Function) The substrate is held on the surface of a substrate holder and subjected to processing such as ion implantation in a vacuum chamber, but a fine wire with elasticity and good thermal conductivity is implanted on the surface of the holder. As the substrate is being processed, the amount of heat generated during substrate processing is transmitted to the cooled substrate holder via the thin wires, and as the substrate is cooled, the implanted thin wires have an apparent Shore hardness equal to that of soft silicone rubber. Since the thickness of the thin wires is small, each thin wire contacts the substrate in accordance with the deformation of the substrate, resulting in good cooling performance.
（実施例）
本発明の実施例を図面につき説明するに、第１図に於て
（１）は真空塞（２）内に配置される基板ホルダを示し
、該基板ホルダ（１）は例えばＯｕ、ＡＪ等の全屈で形
成され、その内部には冷却水の循環路（３）が設けられ
る。(Embodiment) To explain an embodiment of the present invention with reference to the drawings, in FIG. , AJ, etc., and a cooling water circulation path (3) is provided inside thereof.
（４）は該ホルダ（１）の表面即ち冷却面に植設した熱
伝導率の高いＯｕ、ｋｌ、Ｏ，Ｍｏ等の金属繊維からな
る＃ＴＩＩＩＩで、該細線（４）の材料、寸法、植設の
密度、形状等を調整して細線群（４ａ）全体の見掛けの
ショア硬度が柔らかいシリコンラバーと同程度になるよ
うに植設される。尚、該細線（４）に弾力性を保有させ
る手段としてその形状をコイル状又は蛇行状に加工する
ことが考えられる。(4) is #TIII made of metal fibers such as Ou, kl, O, Mo, etc. with high thermal conductivity implanted on the surface of the holder (1), that is, the cooling surface, and the material and dimensions of the thin wire (4), The density, shape, etc. of the implantation are adjusted so that the overall apparent Shore hardness of the thin wire group (4a) is comparable to that of soft silicone rubber. In addition, as a means for imparting elasticity to the thin wire (4), it is conceivable to process the thin wire (4) into a coil shape or a meandering shape.
（５）は処理されるガリウムヒ素、シリコンウェハ等の
基板を示し、該基板（５）は直線或は第２図示のように
薄膜（６）を介して細線群（４＆）と当接され、処理に
伴なって基板（５）に発生する熱は細線群（４ａ）を介
して冷却された基板ホルダ（１）へと伝わり、基板（５
）が熱割れしないように冷却される。(5) indicates a substrate such as gallium arsenide or silicon wafer to be treated, and the substrate (5) is brought into contact with a group of thin wires (4&) either straight or through a thin film (6) as shown in the second figure; The heat generated in the substrate (5) during processing is transmitted to the cooled substrate holder (1) via the thin wire group (4a), and the heat generated in the substrate (5)
) is cooled to prevent thermal cracking.
該薄膜（６）としては熱流束が低い範囲ではテフロン膜
が使用され、熱流束が高い範囲では良熱伝導性で真空特
性の良い可撓材が使用される。As the thin film (6), a Teflon membrane is used in a range where the heat flux is low, and a flexible material with good thermal conductivity and good vacuum properties is used in a range where the heat flux is high.
（発明の効果）
このように本発明によるときは、基板ホルダの表面に弾
力性と熱良導性を兼備した細線を植設し、しかも細線群
のショア硬度をシリコンラバーと同程度としたので、基
板と各細線は機械的に強い力を与えずに互に接触させる
ことが出来、基板から大きな熱流束を基板ホルダに伝え
得て熱変形、熱割れの生じ易い基板の冷却を効率良く行
なえる効果がある。(Effects of the Invention) As described above, according to the present invention, thin wires having both elasticity and good thermal conductivity are implanted on the surface of the substrate holder, and the Shore hardness of the thin wires is made to be on the same level as silicon rubber. The substrate and each thin wire can be brought into contact with each other without applying strong mechanical force, and a large heat flux can be transmitted from the substrate to the substrate holder, allowing efficient cooling of substrates that are prone to thermal deformation and thermal cracking. It has the effect of
第１図は本発明の実施例の截断側面図、第２図はその変
形例の要部の截断側面図である。
（１）・・・基板ホルダ （２）・・・真空室（４
）・・・細線 （４ａ）・・・細線群（５）
・・・基板
外２名
第１図
第２図FIG. 1 is a cross-sectional side view of an embodiment of the present invention, and FIG. 2 is a cross-sectional side view of a main part of a modification thereof. (1)...Substrate holder (2)...Vacuum chamber (4
)... Thin line (4a)... Thin line group (5)
...2 people outside the board Figure 1 Figure 2
Claims (1)
された基板ホルダにより保持するようにしたものに於て
、該基板に当接する基板ホルダの表面に弾力性と熱良導
性を備えた細線を多数植設し且つ植設された細線群の見
掛けのシヨア硬度をシリコンラバーと同程度とすること
を特徴とする基板の冷却装置。In a device in which a substrate to be processed in a vacuum chamber is held by a substrate holder cooled by circulation of cooling water, etc., the surface of the substrate holder that contacts the substrate is provided with elasticity and good thermal conductivity. A cooling device for a substrate, characterized in that a large number of thin wires are planted and the apparent shore hardness of the group of planted thin wires is comparable to that of silicon rubber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154584A JPS6142843A (en) | 1984-08-02 | 1984-08-02 | Device for cooling substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154584A JPS6142843A (en) | 1984-08-02 | 1984-08-02 | Device for cooling substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6142843A true JPS6142843A (en) | 1986-03-01 |
| JPH0313703B2 JPH0313703B2 (en) | 1991-02-25 |
Family
ID=15737138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16154584A Granted JPS6142843A (en) | 1984-08-02 | 1984-08-02 | Device for cooling substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6142843A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244820A (en) * | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
| EP1519399A2 (en) | 2003-09-24 | 2005-03-30 | Carl Zeiss NTS GmbH | Particle beam apparatus with cooled anti-contamination shield and/or sample holder |
| DE102012222735B4 (en) * | 2011-12-15 | 2021-06-02 | GM Global Technology Operations, LLC (n.d. Ges. d. Staates Delaware) | Cooling system for a battery cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60236223A (en) * | 1984-05-10 | 1985-11-25 | Ulvac Corp | Cooling device of substrate |
-
1984
- 1984-08-02 JP JP16154584A patent/JPS6142843A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60236223A (en) * | 1984-05-10 | 1985-11-25 | Ulvac Corp | Cooling device of substrate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244820A (en) * | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
| EP1519399A2 (en) | 2003-09-24 | 2005-03-30 | Carl Zeiss NTS GmbH | Particle beam apparatus with cooled anti-contamination shield and/or sample holder |
| EP1519399A3 (en) * | 2003-09-24 | 2010-01-27 | Carl Zeiss NTS GmbH | Particle beam apparatus with cooled anti-contamination shield and/or sample holder |
| DE102012222735B4 (en) * | 2011-12-15 | 2021-06-02 | GM Global Technology Operations, LLC (n.d. Ges. d. Staates Delaware) | Cooling system for a battery cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0313703B2 (en) | 1991-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Föll et al. | Cross‐sectional transmission electron microscopy of silicon‐silicide interfaces | |
| KR100306833B1 (en) | Semiconductor device manufacturing method | |
| TWI303077B (en) | Semiconductor wafer with layer structure with low warp and bow, and process for producing it | |
| JPH0329170B2 (en) | ||
| EP0926719A3 (en) | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same | |
| GB2114813A (en) | Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet | |
| JPH05275429A (en) | Method of forming intrinsic gettering sites in bonded substrate, and method of capturing movable ions in silicon semiconductor substrate | |
| JPS6142843A (en) | Device for cooling substrate | |
| US6227939B1 (en) | Temperature controlled chemical mechanical polishing method and apparatus | |
| US5933750A (en) | Method of fabricating a semiconductor device with a thinned substrate | |
| JPS6445126A (en) | Manufacture of gaas compound semiconductor substrate | |
| JPH0228248B2 (en) | KIBANNOREIKYAKUSOCHI | |
| JPS6158260A (en) | Substrate cooler | |
| JPS63193447A (en) | Sample holding device | |
| JPH0212383B2 (en) | ||
| JPS63293813A (en) | Semiconductor substrate | |
| JPH05125534A (en) | Cooler for substrate to be subjected to surface treatment | |
| JPH0648831Y2 (en) | Substrate cooling pad | |
| JP2800464B2 (en) | Annealing furnace for compound semiconductor substrates | |
| SE8306663D0 (en) | METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICE | |
| JPH0417920B2 (en) | ||
| JP2501798Y2 (en) | Low temperature treatment equipment | |
| JPS6031081Y2 (en) | back plate device | |
| GB2112205A (en) | A thermal processing system for semiconductors and other materials using two or more electron beams | |
| JPH10289883A (en) | Method and apparatus for heat treatment of semi-insulative gaas wafer |