JPH0417920B2 - - Google Patents
Info
- Publication number
- JPH0417920B2 JPH0417920B2 JP3656385A JP3656385A JPH0417920B2 JP H0417920 B2 JPH0417920 B2 JP H0417920B2 JP 3656385 A JP3656385 A JP 3656385A JP 3656385 A JP3656385 A JP 3656385A JP H0417920 B2 JPH0417920 B2 JP H0417920B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cooling plate
- cooling
- front surface
- protrusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 50
- 238000001816 cooling Methods 0.000 claims description 43
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000000498 cooling water Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 7
- 239000012528 membrane Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体の製造に使用されるシリコンウ
エハ等の基板を冷却する装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus for cooling a substrate such as a silicon wafer used in the manufacture of semiconductors.
（従来の技術）
従来、真空室内に於いて、この種の基板にイオ
ンを注入し、その表面の物性を変えることがIC
等の製造工程で行なわれているが、該基板はイオ
ンの注入等の熱入射に伴う温度上昇により損傷す
る危険があるので、該基板を冷却水を循環させた
冷却板の平坦な或はレンズ状に***した前面に当
接させて冷却している。この場合、冷却板と基板
との間に弾力性に富む熱伝導性ゴムを設け、該基
板の周辺をクランプして取付けすることを行なわ
れている。(Prior art) Conventionally, in a vacuum chamber, ions were implanted into this type of substrate to change the physical properties of its surface.
However, since there is a risk of damage to the substrate due to temperature rise due to heat input during ion implantation, etc., it is necessary to use a flat cooling plate with circulating cooling water or a lens. It is cooled by making contact with the raised front surface. In this case, highly elastic thermally conductive rubber is provided between the cooling plate and the substrate, and the substrate is mounted by clamping the periphery of the substrate.
（発明が解決しようとする問題点）
シリコンウエハの基板の周囲をクランプする
と、基板のクランプ部分はその背面が弾力性のゴ
ムであるので押しつけられて変形し、基板とゴム
との間にゴムでは追従出来ない遊離部分が生じて
両者の実際の接触面積は比較的少なく、近時のよ
うに基板の処理に大電力の使用が要求されて基板
の発熱量も大きくなる場合の冷却装置としては不
向きである。(Problem to be Solved by the Invention) When a silicon wafer is clamped around a substrate, the clamped portion of the substrate is pressed and deformed because its back surface is made of elastic rubber, and there is no rubber between the substrate and the rubber. There is a loose part that cannot be followed, and the actual contact area between the two is relatively small, making it unsuitable as a cooling device when, as in recent years, a large amount of power is required to process the substrate, and the amount of heat generated by the substrate increases. It is.
また冷却板の前面の弾力性のゴムを取除き、基
板を直接に該前面に当接させた場合、該基板面に
熱による変形で生じる凹凸のためにやはり遊離部
分が生じて接触面積が少なくなり、良好な冷却性
が得られない不都合がある。 Furthermore, if the elastic rubber on the front surface of the cooling plate is removed and the board is brought into direct contact with the front surface, loose parts will still occur due to unevenness caused by heat deformation on the board surface, resulting in a small contact area. Therefore, there is a problem that good cooling performance cannot be obtained.
本発明は真空中で処理される基板と冷却板の大
きな接触面積が得られる構造として両者間の熱伝
達量を大きくする冷却装置を提供することを目的
とするものである。 SUMMARY OF THE INVENTION An object of the present invention is to provide a cooling device that has a structure that allows a large contact area between a substrate to be processed in a vacuum and a cooling plate to increase the amount of heat transfer between the two.
（問題点を解決するための手段）
本発明では、真空室内でイオン注入その他の処
理を施す基板を、冷却水の循環等により冷却され
た冷却板の前面にクランプで押さえ付けて処理に
伴い昇温する基板を冷却するようにしたものに於
いて、該冷却板の前面に、溝切加工により角形或
いは丸形の多数の突起を形成するようにした。(Means for Solving the Problems) In the present invention, a substrate to be subjected to ion implantation or other processing in a vacuum chamber is held down with a clamp to the front of a cooling plate cooled by circulation of cooling water, etc., and raised as the processing progresses. In a device designed to cool a heated substrate, a large number of square or round protrusions are formed on the front surface of the cooling plate by grooving.
（作 用）
シリコンウエハ等の基板は冷却板の前面にクラ
ンプにより押さえ付けて保持し、これに真空室内
でイオン注入等の熱入射の処理が施されると該基
板が昇温して熱による変形を生じるが、該冷却板
の前面には多数の突起が形成されているので、該
基板の背面に存在する凹部内に冷却板の突起が進
入し、該背面に存在する凸部は該冷却板の突起間
の谷部へ進入し、該基板は冷却板の突起と多く接
触することが出来、基板と冷却板の接触面積が増
加して冷却性が向上する。(Function) A substrate such as a silicon wafer is held in place by being clamped to the front of a cooling plate, and when it is subjected to heat injection processing such as ion implantation in a vacuum chamber, the temperature of the substrate rises and the temperature increases due to heat. However, since a large number of protrusions are formed on the front surface of the cooling plate, the protrusions of the cooling plate enter into the recesses present on the back surface of the substrate, and the protrusions present on the rear surface deform the cooling plate. The substrate enters into the valleys between the protrusions of the plate, allowing the substrate to come into contact with many of the protrusions on the cooling plate, increasing the contact area between the substrate and the cooling plate, and improving cooling performance.
（実施例）
本発明の実施例を図面につき説明するに、第１
図に於いて、１は真空室２内配置される基板ホル
ダで、該基板ホルダ１は例えばCu、Al等の金属
で形成され、その内部或は背面に冷却水等の冷媒
の循環路３が設けられる。(Example) To explain the example of the present invention with reference to the drawings, the first example is as follows.
In the figure, reference numeral 1 denotes a substrate holder placed in a vacuum chamber 2. The substrate holder 1 is made of metal such as Cu or Al, and has a circulation path 3 for a coolant such as cooling water inside or on its back. provided.
４は該ホルダ１の表面即ち冷却面に設けたCu
等の熱良導性の金属で形成した冷却板を示し、そ
の前面４ａにシリコンウエハ等の基板５がクラン
プ６で押し付けられて当接される。該クランプ６
は基板５の周縁の例えば３ケ所を押圧し、これと
冷却板５との間に基板５を挟持する。 4 is a Cu provided on the surface of the holder 1, that is, the cooling surface.
A substrate 5 such as a silicon wafer is pressed against the front surface 4a of the cooling plate by a clamp 6. The clamp 6
Presses, for example, three places on the periphery of the substrate 5, and holds the substrate 5 between this and the cooling plate 5.
該冷却板４の前面４ａには、第２図示のように
縦軸に溝切加工を施すことにより多数の突起７を
形成し、その具体的形状は第３図及び第４図に見
られるように丸形或は角形に形成する等任意であ
り、各突起７の間隔や高さは基板５の背面に存在
する凹凸の平均や分散の程度を考慮して決定され
る。該冷却板４が150mmφの場合、その表面に、
例えば幅１mm、深さ１mmの溝を２mm間隔で縦横に
溝切加工を施し、２mm角の突起を形成する。真空
室２内で基板５の表面にイオンが注入されて昇温
すると該基板５はイオン注入面側が凸面となるよ
うに反り返えるの、該冷却板４の前面４ａを予め
図示のようにレンズ状に突出した形状に形成して
おき、基板５の昇温時に該冷却板４に適合して当
接可能とすることが好ましい。 A large number of protrusions 7 are formed on the front surface 4a of the cooling plate 4 by grooving the vertical axis as shown in FIG. 2, and the specific shape thereof is as shown in FIGS. 3 and 4. The protrusions 7 may be formed in any shape, such as round or square, and the spacing and height of each protrusion 7 is determined by taking into consideration the average and degree of dispersion of the unevenness existing on the back surface of the substrate 5. When the cooling plate 4 has a diameter of 150 mm, its surface is
For example, grooves with a width of 1 mm and a depth of 1 mm are cut vertically and horizontally at intervals of 2 mm to form protrusions of 2 mm square. When ions are implanted into the surface of the substrate 5 in the vacuum chamber 2 and the temperature rises, the substrate 5 is warped so that the ion-implanted surface becomes a convex surface. It is preferable that the cooling plate 4 is formed in a protruding shape so that it can fit and come into contact with the cooling plate 4 when the temperature of the substrate 5 increases.
該基板５にイオン注入処理が施されると昇温
し、その熱量は冷却板４を介して基板ホルダ１へ
と流れ、高温化による破損等を防止するが、該冷
却板４の前面４ａに形成した突起７が該前面４ａ
と当接する基板５の背面に存在する凹部に進入
し、基板５と冷却板との接触面積が増大され、そ
れに応じて冷却性が向上する。 When the ion implantation process is performed on the substrate 5, the temperature rises, and the amount of heat flows through the cooling plate 4 to the substrate holder 1 to prevent damage caused by the high temperature. The formed protrusion 7 is the front surface 4a.
The contact area between the substrate 5 and the cooling plate is increased, and the cooling performance is improved accordingly.
各突起７の頂面に、第５図示のようなポリ四フ
ツ化エチレンの膜８を重層し、さらにこの上に金
属膜をコーテイングすることもあり、或は第６図
示のように突起７を含めて前面４ａの全体に該膜
８でコーテイングして、冷却板４の物質で基板５
が汚染されることを防止すると共に該膜８の多少
の弾性変形によりさらに広く突起７と基板５と接
触を得られるように構成することも可能である。
尚、第５図示の場合、膜８が変形して基板５の背
面の凸部を受け入れる。 A polytetrafluoroethylene film 8 may be layered on the top surface of each protrusion 7 as shown in FIG. The entire front surface 4a including the film 8 is coated with the film 8, and the substrate 5 is coated with the material of the cooling plate 4.
It is also possible to prevent the protrusions 7 from being contaminated, and also to allow the protrusions 7 and the substrate 5 to come into contact with each other more widely through some elastic deformation of the membrane 8.
In the case shown in FIG. 5, the membrane 8 is deformed to accept the convex portion on the back surface of the substrate 5.
また該膜８に代え薄膜状或は繊維状のカーボン
を積層して膜状に形成したものや金属薄膜或は金
属繊維を積層して膜状に形成したものを使用して
もよい。 In place of the membrane 8, a membrane formed by laminating thin or fibrous carbon, or a membrane formed by laminating metal thin films or metal fibers may be used.
第７図は基板の冷却装置の冷却性能を示し、こ
れに於いて、曲線Ａは従来のレンズ状に前面が突
出した冷却板による基板の温度変化であり、イオ
ンビームの電力やその他の熱入射が増大すると基
板温度は大幅に上昇し、投入電力が1000W近くな
ると300℃を越え、基板あるいは基板に塗布した
レジストの破損を生じ易い。しかしレンズ状に突
出した前面を有する冷却板にさらに突起７を形成
した本発明のものでは曲線Ｂ，Ｃ，Ｄの如く投入
電力が増大しても温度上昇を防げた。曲線Ｂのも
のは突起７の上面に厚さ0.1mmのポリ四フツ化エ
チレンの膜８を設けたもの、曲線Ｃのものは膜８
がなく突起７上に直接基板５を当接させた場合、
また曲線Ｄは薄膜状のカーボンを積層して得た膜
を突起７の上面に設けた場合の基板５の温度変化
である。 Figure 7 shows the cooling performance of the substrate cooling device, in which curve A is the temperature change of the substrate due to a conventional cooling plate with a protruding front surface in the shape of a lens, and curve A is the temperature change of the substrate due to the power of the ion beam and other heat input. As the temperature increases, the substrate temperature rises significantly, exceeding 300°C when the input power approaches 1000W, which tends to cause damage to the substrate or the resist applied to the substrate. However, in the case of the present invention in which projections 7 were further formed on the cooling plate having a lens-shaped front surface, the temperature rise could be prevented even if the input power increased as shown by curves B, C, and D. The curve B has a polytetrafluoroethylene film 8 with a thickness of 0.1 mm on the upper surface of the protrusion 7, and the curve C has a film 8.
When the board 5 is brought into direct contact with the protrusion 7 without
Further, curve D represents the temperature change of the substrate 5 when a film obtained by laminating thin carbon films is provided on the upper surface of the protrusion 7.
（発明の効果）
このように本発明によるときは、基板が当接さ
れる冷却板の前面に多数の突起を形成するように
したので基板と冷却板との接触面積を増大させて
基板の冷却性を向上させ得られ、投入電力を大き
くしての基板の処理で基板を損傷させることなく
行なうことが出来る等の効果がある。(Effects of the Invention) According to the present invention, since a large number of protrusions are formed on the front surface of the cooling plate against which the substrate comes into contact, the contact area between the substrate and the cooling plate is increased, thereby cooling the substrate. There are effects such as improved performance, and the ability to process substrates with increased input power without damaging them.
第１図は本発明の実施例の截断側面図、第２図
は冷却板の１例の斜視図、第３図及び第４図は冷
却板の拡大断面図、第５図及び第６図は冷却板の
変形例の拡大断面図、第７図は冷却性能を示す線
図である。
２…真空室、４…冷却板、４ａ…前面、５…基
板、７…突起。
Fig. 1 is a cutaway side view of an embodiment of the present invention, Fig. 2 is a perspective view of an example of a cooling plate, Figs. 3 and 4 are enlarged sectional views of the cooling plate, and Figs. 5 and 6 are FIG. 7 is an enlarged sectional view of a modified example of the cooling plate, and is a diagram showing the cooling performance. 2...Vacuum chamber, 4...Cooling plate, 4a...Front surface, 5...Substrate, 7...Protrusion.
Claims (1)
板を、冷却水の循環等により冷却された冷却板の
前面にクランプで押さえ付けて処理に伴い昇温す
る基板を冷却するようにしたものに於いて、該冷
却板の前面に、溝切加工により角形或いは丸形の
多数の突起を形成したことを特徴とする基板の冷
却装置。1. In a vacuum chamber where a substrate is subjected to ion implantation or other processing, it is clamped to the front of a cooling plate that is cooled by circulation of cooling water, etc., in order to cool the substrate whose temperature rises due to processing. A cooling device for a substrate, characterized in that a large number of square or round protrusions are formed on the front surface of the cooling plate by grooving.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3656385A JPS61197500A (en) | 1985-02-27 | 1985-02-27 | Cooler for substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3656385A JPS61197500A (en) | 1985-02-27 | 1985-02-27 | Cooler for substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61197500A JPS61197500A (en) | 1986-09-01 |
| JPH0417920B2 true JPH0417920B2 (en) | 1992-03-26 |
Family
ID=12473225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3656385A Granted JPS61197500A (en) | 1985-02-27 | 1985-02-27 | Cooler for substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61197500A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3687877B2 (en) * | 1996-12-18 | 2005-08-24 | 信越化学工業株式会社 | Platen for ion implanter |
| WO2001026141A2 (en) * | 1999-10-01 | 2001-04-12 | Varian Semiconductor Equipment Associates, Inc. | Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure |
-
1985
- 1985-02-27 JP JP3656385A patent/JPS61197500A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61197500A (en) | 1986-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |