JPS6134255B2 - - Google Patents

Info

Publication number: JPS6134255B2
Authority: JP; Japan
Prior art keywords: mask; layer; film; polycrystalline; polycrystalline semiconductor
Prior art date: 1976-09-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP10754376A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5333077A (en

Inventor

Yoji Yamanaka

Toshio Wada

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-09-08

Filing date

1976-09-08

Publication date

1986-08-06

1976-09-08 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1976-09-08 Priority to JP10754376A priority Critical patent/JPS5333077A/ja

1978-03-28 Publication of JPS5333077A publication Critical patent/JPS5333077A/ja

1986-08-06 Publication of JPS6134255B2 publication Critical patent/JPS6134255B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 35
238000005530 etching Methods 0.000 claims description 12
239000000758 substrate Substances 0.000 claims description 12
239000013078 crystal Substances 0.000 claims description 10
239000012535 impurity Substances 0.000 claims description 9
238000004519 manufacturing process Methods 0.000 claims description 5
229910021332 silicide Inorganic materials 0.000 claims description 5
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
238000010438 heat treatment Methods 0.000 claims description 3
229910052751 metal Inorganic materials 0.000 claims description 2
239000002184 metal Substances 0.000 claims description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 24
229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
235000012239 silicon dioxide Nutrition 0.000 description 20
239000000377 silicon dioxide Substances 0.000 description 20
229910052697 platinum Inorganic materials 0.000 description 12
238000000034 method Methods 0.000 description 9
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
229910052581 Si3N4 Inorganic materials 0.000 description 7
229910052698 phosphorus Inorganic materials 0.000 description 7
239000011574 phosphorus Substances 0.000 description 7
229910021339 platinum silicide Inorganic materials 0.000 description 7
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 6
238000009792 diffusion process Methods 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
230000003647 oxidation Effects 0.000 description 5
238000007254 oxidation reaction Methods 0.000 description 5
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
229910052782 aluminium Inorganic materials 0.000 description 3
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
229910045601 alloy Inorganic materials 0.000 description 2
239000000956 alloy Substances 0.000 description 2
239000007864 aqueous solution Substances 0.000 description 2
238000007796 conventional method Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
MGTPLVPKJIZKQE-UHFFFAOYSA-N [Pt]#P Chemical compound [Pt]#P MGTPLVPKJIZKQE-UHFFFAOYSA-N 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
238000010586 diagram Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000009832 plasma treatment Methods 0.000 description 1
230000008054 signal transmission Effects 0.000 description 1
238000001947 vapour-phase growth Methods 0.000 description 1

Landscapes

Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP10754376A 1976-09-08 1976-09-08 Semiconductor integrated circuit Granted JPS5333077A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP10754376A JPS5333077A (en)	1976-09-08	1976-09-08	Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP10754376A JPS5333077A (en)	1976-09-08	1976-09-08	Semiconductor integrated circuit

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP9420184A Division JPS6016470A (ja)	1984-05-11	1984-05-11	半導体集積回路

Publications (2)

Publication Number	Publication Date
JPS5333077A JPS5333077A (en)	1978-03-28
JPS6134255B2 true JPS6134255B2 (zh)	1986-08-06

Family

ID=14461843

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP10754376A Granted JPS5333077A (en)	1976-09-08	1976-09-08	Semiconductor integrated circuit

Country Status (1)

Country	Link
JP (1)	JPS5333077A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS568846A (en) *	1979-07-03	1981-01-29	Nec Corp	Semiconductor integrated circuit
JPS57167660A (en) *	1981-03-30	1982-10-15	Fujitsu Ltd	Forming method for high-melting point metallic silicide layer
US4545116A (en) *	1983-05-06	1985-10-08	Texas Instruments Incorporated	Method of forming a titanium disilicide

1976
- 1976-09-08 JP JP10754376A patent/JPS5333077A/ja active Granted

Also Published As

Publication number	Publication date
JPS5333077A (en)	1978-03-28

Publication	Publication Date	Title
US4629520A (en)	1986-12-16	Method of forming shallow n-type region with arsenic or antimony and phosphorus
US4545113A (en)	1985-10-08	Process for fabricating a lateral transistor having self-aligned base and base contact
JPS6252963A (ja)	1987-03-07	バイポ−ラトランジスタの製造方法
CA1179786A (en)	1984-12-18	Lateral transistor structure having self-aligned base and base contact and method of fabrication
JPS63257231A (ja)	1988-10-25	半導体装置の製造方法
JPS6134255B2 (zh)	1986-08-06
JPH0127589B2 (zh)	1989-05-30
JPS60258964A (ja)	1985-12-20	半導体装置の製造方法
JPH04303944A (ja)	1992-10-27	半導体装置の製造方法
JPS6220711B2 (zh)	1987-05-08
JPS6237543B2 (zh)	1987-08-13
JPS6128231B2 (zh)	1986-06-28
JPH04348532A (ja)	1992-12-03	半導体装置およびその製造方法
JPS6115579B2 (zh)	1986-04-24
JPH01108772A (ja)	1989-04-26	バイポーラトランジスタの製造方法
JPS5928993B2 (ja)	1984-07-17	半導体装置とその製造方法
JPS5980968A (ja)	1984-05-10	半導体集積回路装置の製造方法
JPS6016470A (ja)	1985-01-28	半導体集積回路
JPS61147575A (ja)	1986-07-05	半導体装置の製造方法
JPH0348652B2 (zh)	1991-07-25
JPH0380542A (ja)	1991-04-05	半導体集積回路装置
JPH0570931B2 (zh)	1993-10-06
JPH04346232A (ja)	1992-12-02	半導体装置の製造方法
JPS6112031A (ja)	1986-01-20	半導体装置の製造方法
JPS6135707B2 (zh)	1986-08-14