JPS6130374A - Mirror-surfacelike polishing for surface of plate member - Google Patents
Mirror-surfacelike polishing for surface of plate memberInfo
- Publication number
- JPS6130374A JPS6130374A JP15232184A JP15232184A JPS6130374A JP S6130374 A JPS6130374 A JP S6130374A JP 15232184 A JP15232184 A JP 15232184A JP 15232184 A JP15232184 A JP 15232184A JP S6130374 A JPS6130374 A JP S6130374A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- polishing
- disc
- plate member
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は円形又は角形状板材の表面を鏡面研摩する方法
に関し、特に板材の裏面への研摩液の回り込みを少なく
し、裏面の寸法、形状等の劣化を防止したものである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for mirror-polishing the surface of a circular or angular plate, and in particular, to reduce the amount of polishing liquid going around to the back of the plate, and improve the size and shape of the back. This prevents deterioration such as
(従来の技術)
一般に円形又は角形状板材、例えば半導体単結晶板はメ
カノケミカル又はケミカル研摩法で表面を鏡面研摩して
いる。この方法は第2図に示すように単結晶板(1)の
裏面を回転プレート(2〉に取付け、表面を回転テーブ
ル(3)上の研摩パッド(4)と研摩液を介して相互回
転運動により摺接させて鏡面状に研摩するものである。(Prior Art) Generally, the surface of a circular or square plate, such as a semiconductor single crystal plate, is polished to a mirror finish using a mechanochemical or chemical polishing method. As shown in Figure 2, this method involves attaching the back side of a single crystal plate (1) to a rotating plate (2), and moving the front side through a mutual rotational movement through a polishing pad (4) on a rotating table (3) and a polishing liquid. The material is brought into sliding contact and polished to a mirror finish.
通常単結晶板(1)は第3図に示すように周辺の表面側
と裏面側を面取り加工し、第4図(イ)に示すように低
融点ワックス(5)を用い、回転プレート(2)を50
〜60℃に加熱して単結晶板(1)を取付けるが、又は
第4図に示すように回転プレート(2)上に両面粘着テ
ープ(6)を用いてキャリア(7)付ワックスレスパッ
ド(8)を取付番ノ、該キャリア(7)内に単結晶板(
1)を挿入して水の表面張力で固定し−Cいる。このよ
うにして鏡面研摩終了後回転プレート(2)に取付けた
単結晶板(1)の表面を洗浄すると共に直ちに取外し、
更に水洗後乾燥している。Normally, the single crystal plate (1) is chamfered on the front and back sides of the periphery as shown in Figure 3, and a low melting point wax (5) is used as shown in Figure 4 (A), and the rotating plate (2 ) to 50
The single crystal plate (1) is attached by heating to ~60°C, or the waxless pad (7) with carrier (7) is attached using double-sided adhesive tape (6) on the rotating plate (2) as shown in Figure 4. 8) is the mounting number, and the single crystal plate (
1) is inserted and fixed by the surface tension of water. After completing the mirror polishing in this way, the surface of the single crystal plate (1) attached to the rotating plate (2) is cleaned and immediately removed.
Furthermore, it is dried after washing with water.
尚メカノケミカル研摩法とは、研摩法にエツチング作用
をもった液(エッチャント)と、5iOzやZr0zの
ような砥粒を共存させた状態で研摩づ−る方法であり、
ケミカル研摩法とは研摩液にエラチャンt〜だけを用い
て研摩する方法である。The mechanochemical polishing method is a polishing method in which a liquid (etchant) with an etching action and abrasive grains such as 5iOz or ZrOz coexist.
The chemical polishing method is a method of polishing using only Elachan t~ as a polishing liquid.
(発明が解決しようとする問題点)
しかるに単結晶板表面の鏡面研摩中に単結晶板の周辺よ
り、第5図(イ)に示すように単結晶板(1)とワック
ス(5)間に、また第5図(ロ)に示すように単結晶板
(1)とワックスレスパッド(8)間にエッチャントが
浸入し、単結晶板(1)の裏面がエツチングされ、裏面
の形状、寸法が劣化Jる欠点があった。特に浸入したエ
ッチャントは界面張力が強く、水洗による除去が困難で
、単結晶板(1)を回転プレートから外づまで単結晶板
(1)の裏面のエツチングが進み、裏面の形状、1法を
劣化づる。(Problem to be Solved by the Invention) However, during the mirror polishing of the surface of the single crystal plate, a phenomenon occurred between the single crystal plate (1) and the wax (5) from the periphery of the single crystal plate, as shown in FIG. 5(a). Also, as shown in Figure 5 (b), the etchant penetrates between the single crystal plate (1) and the waxless pad (8), etching the back side of the single crystal plate (1), and changing the shape and dimensions of the back side. There was a drawback of deterioration. In particular, the infiltrated etchant has a strong interfacial tension and is difficult to remove by washing with water.The back side of the single crystal plate (1) continues to be etched until the single crystal plate (1) is removed from the rotating plate. Deteriorating.
本発明はこれに鑑み種々検討の結果、板材表面の鏡面研
摩中に、周辺から板材裏面にエッチャントが浸入するの
は、板材周辺の裏面側面取りが大ぎく起因していること
を知見し、更に検討の結果、板材の裏面へのエッチャン
トの回り込みを少なくし、裏面の寸法、形状等の劣化の
少ない板材表面の鏡面研摩法を開発したもので、円形又
は角形状板材の裏面を回転プレートに取付番プ、表面を
回転テーブル上の研摩パッド゛に研摩液を介して摺動さ
せて鏡面研摩する方法において、板材外周面の表面側を
面取り加工するか、又は周辺を表面側に縮小した台形状
に加工して回転プレートに取付けることを特徴とするも
のである。In view of this, as a result of various studies, the present invention has discovered that during mirror polishing of the surface of a plate, the infiltration of etchant from the periphery to the back surface of the plate is largely due to the chamfering of the back side of the periphery of the plate. As a result of our research, we have developed a mirror polishing method for the surface of a board that reduces the amount of etchant that wraps around the back of the board and reduces the deterioration of the dimensions and shape of the back. In this method, the surface of the plate is polished to a mirror finish by sliding it on a polishing pad on a rotary table through a polishing liquid, in which the outer circumferential surface of the plate is chamfered or the periphery is reduced to the surface side to form a trapezoid. It is characterized by being processed and attached to a rotating plate.
即ち本発明は表面を鏡面研摩する円形又は角形状板材を
第1図(イ)に示すように、その外周面の表面側のみを
面取り加工するか、第1図(ロ)に示すように、その周
辺を表面側に縮小した台形状に加工する。このような加
工は通常倣U−ラ一式周辺面取機で容易に行なうことが
できる。これを第4図(イ)に示すように板材の裏面を
回転プレートにワックスを用いて取付けるか、又は第4
図(ロ)に示′すように板材の裏面を回転プレートにワ
ックスレスバッドを用いて取付け、第2図に示すように
回転デープル上の研摩パッドとエラチャン1〜又はエッ
チャントと5iOzやZr0zのような砥粒を共存させ
た研摩液を介在させ、相互回転運動により摺動させて、
板材表面を鏡面研摩するものである。That is, in the present invention, a circular or square plate material whose surface is to be polished to a mirror finish is chamfered only on the surface side of the outer peripheral surface as shown in FIG. The periphery is processed into a trapezoid shape that is reduced toward the surface side. Such machining can be easily carried out using a peripheral chamfering machine including a copying U-ra. As shown in Figure 4 (a), attach the back side of the board to the rotating plate using wax, or
As shown in Figure (b), attach the back side of the plate to the rotating plate using a waxless pad, and as shown in Figure 2, attach the polishing pad on the rotating table and the etchant 1~ or etchant such as 5iOz or Zr0z. A polishing liquid containing abrasive grains is interposed, and the polishing is made to slide by mutual rotational movement.
This polishes the surface of the plate material to a mirror finish.
尚研摩後は速かに水洗し、しかる後回転プレートから取
外して、水洗乾燥する。After polishing, immediately wash with water, then remove from the rotating plate, wash with water, and dry.
板材周辺の裏面側を面取りすることなく、周辺の表面側
を面取り加工するが、又は周辺を表面側に縮小した台形
状に加工して回転プレートに取付Gプることにより、周
辺より板材裏面l\の研摩液の回り込みが有効に防止さ
れ、板材表面の寸法、形状の劣化が防止(パぎる。By chamfering the front side of the periphery without chamfering the back side of the periphery of the plate material, or by processing the periphery into a trapezoid shape that is reduced to the front side and attaching it to the rotating plate, the back side of the plate material can be chamfered from the periphery. This effectively prevents the polishing liquid from going around, and prevents deterioration of the dimensions and shape of the plate surface.
半導体単結晶円板(直径” omm 1厚さ0.5mm
)の表面周辺を第1図(イ)に示すように倣1コーラ一
式外周面取機で面取り加工し、これを第4図(ロ)に示
すように円板の表面を回転プレー1−にワックスレスバ
ッドを用いて取付け、第2図に示すように回転デープル
上の研摩パッドとエッヂl/シトと5iOz砥粒を共存
させた研摩液を介在させ、相互回転運動により摺動させ
て、円板表面を鏡面研摩した。これを水洗後回転プレー
トから取外し、再水洗してから乾燥した。Semiconductor single crystal disk (diameter "omm 1 thickness 0.5mm
) is chamfered around the surface of the disk using a copy 1 cola set outer circumferential chamfering machine as shown in Figure 1 (a), and then the surface of the disc is chamfered on a rotary plate 1- as shown in Figure 4 (b). It is attached using a waxless pad, and as shown in Fig. 2, a polishing pad on a rotating lapel and a polishing liquid containing 5iOz abrasive grains are interposed, and the polishing pad is slid by mutual rotational movement to create a circular shape. The surface of the plate was mirror polished. After washing with water, this was removed from the rotating plate, washed again with water, and then dried.
イの結果、円板裏面には研摩液の回り込みによるエツチ
ングが全く認められず、円板裏面の形状は極めて良好で
あった。 ゛
以上半導体単結晶円板の片面鏡面研摩についC説明した
が、これに限るものではなく、円形又は角形状のセラミ
ック、ガラス、金属等の板材のお面鏡面研摩においても
研摩液の回り込みによる寸法、形状の劣化を防止するこ
とができる。As a result, no etching caused by the polishing liquid was observed on the back surface of the disk, and the shape of the back surface of the disk was extremely good.゛Although the explanation above has been about single-sided mirror polishing of a semiconductor single crystal disk, this is not limited to this, and dimensions due to the wraparound of the polishing liquid can also be used in mirror polishing of circular or square shaped ceramic, glass, metal, etc. plates. , deterioration of shape can be prevented.
本発明によれば片面鏡面研摩における裏面への研摩液の
回り込みを防止することができるため、裏面の寸法、形
状の劣化による不良品の発生を著しく減少しつるもので
、工業上顕著な効果を秦するものである。According to the present invention, since it is possible to prevent the polishing liquid from flowing around to the back surface during single-sided mirror polishing, the occurrence of defective products due to deterioration of the dimensions and shape of the back surface is significantly reduced, and this has a significant industrial effect. It is what Qin did.
第1図(イ)、(〔1)は本発明研摩法における板材の
面取り状態を承りもので、(イ)は周辺の表面側を面取
した場合の断面図、(ロ)は周辺を表面側に縮小した台
形状の場合の断面図第2図は表面の鏡面研摩法の一例を
示す説明図第3図は従来研摩法における板材の面取り状
態の一例を示す断面図、第4図(イ)、(ロ)Gま板材
の回転プレートへの取付は状態を、バすもので、(イ)
はワックス使用、(ロ)はワックスレスパッド使用の場
合を示す断面図、第5図(イ)、(ロ)は従来研摩法に
(+5 +jる板材裏面への研摩液の回り込みを示すも
ので、(イ)はワックス使用、(ロ)はワックスレスパ
ッド使用の場合を示す説明図である。Figures 1 (a) and ([1] show the chamfered state of the plate material in the polishing method of the present invention, (a) is a cross-sectional view when the peripheral surface side is chamfered, and (b) is a cross-sectional view when the peripheral surface side is chamfered. Fig. 2 is an explanatory diagram showing an example of a surface mirror polishing method; Fig. 3 is a sectional view showing an example of a chamfered state of a plate material in a conventional polishing method; ), (b) The installation of the G cutting board material to the rotating plate will change the condition, and (a)
5 is a cross-sectional view showing the case where wax is used and (b) is when a waxless pad is used. Figures 5 (a) and (b) show how the polishing liquid flows around to the back side of the plate material, which is different from the conventional polishing method (+5 +j). , (A) is an explanatory view showing the case where wax is used, and (B) is the case where waxless pad is used.
Claims (1)
面を回転テーブル上の研摩パッドに研摩液を介して摺動
させて鏡面研摩する方法において、板材周辺の表面側を
面取り加工するか、又は周辺を表面側に縮小した台形状
に加工して回転プレートに取付けることを特徴とする板
材表面の鏡面研摩法。In this method, the back side of a circular or square plate is attached to a rotating plate, and the front surface is mirror-polished by sliding it on a polishing pad on a rotating table through a polishing liquid. A mirror polishing method for the surface of a plate material, which is characterized by processing the surface into a reduced trapezoid shape and attaching it to a rotating plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15232184A JPS6130374A (en) | 1984-07-23 | 1984-07-23 | Mirror-surfacelike polishing for surface of plate member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15232184A JPS6130374A (en) | 1984-07-23 | 1984-07-23 | Mirror-surfacelike polishing for surface of plate member |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6130374A true JPS6130374A (en) | 1986-02-12 |
Family
ID=15537969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15232184A Pending JPS6130374A (en) | 1984-07-23 | 1984-07-23 | Mirror-surfacelike polishing for surface of plate member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6130374A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003051472A (en) * | 2001-08-08 | 2003-02-21 | Shin Etsu Chem Co Ltd | Rectangular substrate |
-
1984
- 1984-07-23 JP JP15232184A patent/JPS6130374A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003051472A (en) * | 2001-08-08 | 2003-02-21 | Shin Etsu Chem Co Ltd | Rectangular substrate |
JP4561950B2 (en) * | 2001-08-08 | 2010-10-13 | 信越化学工業株式会社 | Square substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3271658B2 (en) | Method for lapping or polishing semiconductor silicon single crystal wafer | |
EP0933166A4 (en) | Abrasive and method for polishing semiconductor substrate | |
EP1111665A3 (en) | Method of planarizing a substrate surface | |
JPH06349796A (en) | Method for surface protection of semiconductor wafer being polished | |
KR20000017512A (en) | Method for reclaiming wafer substrate and polishing solution composition for reclaiming wafer substrate | |
KR20010092732A (en) | Method of processing semiconductor wafers to build in back surface damage | |
JP6027346B2 (en) | Manufacturing method of semiconductor wafer | |
KR840004827A (en) | Surface Polishing Method of Semiconductor Wafer | |
JPS6130374A (en) | Mirror-surfacelike polishing for surface of plate member | |
TW201442090A (en) | Surface processing method of single crystal SiC substrate, method of manufacturing single crystal SiC substrate, and grinding plate for surface processing of single crystal SiC substrate | |
JPH09270396A (en) | Method of manufacturing semiconductor wafer | |
JPS61152358A (en) | Grinding method for semiconductor wafer | |
JP2003236743A (en) | Template for polishing | |
JP2005263569A (en) | Method for manufacturing synthetic quartz glass substrate for polysilicon tft | |
JP4193096B2 (en) | Polishing pad | |
JPH04284629A (en) | Manufacture of semiconductor substrate | |
JPH02294032A (en) | Method and device for polishing wafer | |
JPH11189500A (en) | Production of oxide single crystal substrate | |
JP2019067964A (en) | Abrasive pad | |
JPH02222144A (en) | Semiconductor wafer and manufacture thereof | |
JPH01193170A (en) | Specular face grinding/polishing method | |
JPS6076959A (en) | Manufacture of semi-conductor device | |
JPS62203752A (en) | Grinding method for compound crystal | |
JP2000308961A (en) | Affixing plate and manufacture of same | |
JP2005034926A (en) | Polishing method of wafer substrate, and wafer |