JPS62203752A - Grinding method for compound crystal - Google Patents
Grinding method for compound crystalInfo
- Publication number
- JPS62203752A JPS62203752A JP61046653A JP4665386A JPS62203752A JP S62203752 A JPS62203752 A JP S62203752A JP 61046653 A JP61046653 A JP 61046653A JP 4665386 A JP4665386 A JP 4665386A JP S62203752 A JPS62203752 A JP S62203752A
- Authority
- JP
- Japan
- Prior art keywords
- lapping
- polishing
- coarseness
- grain
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 title claims description 4
- 238000005498 polishing Methods 0.000 claims abstract description 27
- 239000004744 fabric Substances 0.000 claims abstract description 8
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000006061 abrasive grain Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000003754 machining Methods 0.000 abstract description 6
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 5
- 239000003795 chemical substances by application Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 229910001018 Cast iron Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000382 optic material Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、赤外線検出器に用いられら軟質結晶、例えば
水銀カドミウムテルル（１１ｇ１−ｘｃｄ）（Ｔｅ 。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to soft crystals, such as mercury cadmium tellurium (11g1-xcd) (Te 2 ), which are used in infrared detectors.
ｘ＝０．２＞単結晶（以下Ｉｔ ｇＣｄ Ｔ ｅ結晶と
略す）の表面をスクラッチのない光学的平滑面すなわち
鏡面に仕上げるため加工方法に関するものである。x=0.2> This relates to a processing method for finishing the surface of a single crystal (hereinafter abbreviated as It gCd Te crystal) into an optically smooth surface without scratches, that is, a mirror surface.
ＨｇＣｄＴｅ結晶を赤外線検出素子として使用するため
には、例えば幅６０μｍ、長さ８００μｍ、厚さ１０１
ｔｍ前後の薄片板に形成すると共にその表面を赤外線の
入射に対して支障がないように平坦な無歪鏡面に加工す
ることが要求されている。一般に結晶材料の無歪鏡面加
工は、ラッピングやポリシングにより鏡面に仕上げた後
、エツチングにより無歪面を得る方法が行われており、
ＨｇＣｄＴｅの場合にも同様な手法が採られており、エ
ツチングは臭素とメタノールの混合液が用いられている
。In order to use the HgCdTe crystal as an infrared detection element, it must have a width of 60 μm, a length of 800 μm, and a thickness of 101 μm, for example.
It is required to form a thin plate of around tm and process the surface into a flat, undistorted mirror surface so as not to interfere with the incidence of infrared rays. Generally, distortion-free mirror finishing of crystalline materials is performed by lapping or polishing to create a mirror surface, and then etching to obtain a distortion-free surface.
A similar method is used in the case of HgCdTe, and a mixed solution of bromine and methanol is used for etching.
しかし、この場合の鏡面加工は、ＨｇＣｄＴｅ結晶自体
が人工的に開発されてまだ日が浅く、結晶を形成してい
る各元素がすべて有害物質であるなめ取扱いが難しいな
どの理由で十分な検討がなされていない。However, mirror finishing in this case has not been fully investigated because the HgCdTe crystal itself has only recently been artificially developed, and the elements that make up the crystal are all hazardous substances, making it difficult to handle them. Not done.
鏡面加工の例として、英国のアダムヒルガー社（Ａｄａ
ｎ＋ Ｉｌｉｌｇｅｒ Ｌｔｄ、）より１９７９年発行
の［ザカッティング アン・ド ポリシング オブ エ
レフＩ・ロオプチック マテリアルズ（Ｔｈｅ Ｃｕｔ
ｔｉｎｇａｎｄ Ｐｏｌｉｓｈｉｎｇｏｆ Ｅｌｅｃｔ
ｒｏ−Ｏｐｔｉｃ Ｍａｔｅｒｉａｌｓ）１の２０７ペ
ージに記載のように、切断されたウェハ表面をカーボラ
ンダム６００砥粒（ＳｉＣ，平均粒径約３０μｍ）と鋳
鉄ラップの組合せを用いて均一な砂目状表面にラッピン
グ加工した後、リンデＡ砥粒と水とグリコールを混合し
たポリシ液とワ・ソクスボリシャの組合せあるいはリン
デＡ砥粒と水５％Ｎａ２ＣＯ３を混合したボリシ液とピ
ッチボリシャの組合せを用いたポリシング加工が行われ
ている。As an example of mirror finishing, the British company Adam Hilger (Ada
The Cutting and Policing of Elef I. Optic Materials, published in 1979 by Iliger Ltd.
tingand polishingofelect
The cut wafer surface was made into a uniform grained surface using a combination of Carborundum 600 abrasive grains (SiC, average grain size approximately 30 μm) and cast iron wrap as described on page 207 of RO-Optic Materials) 1. After lapping, polishing is performed using a combination of Linde A abrasive grains, a polishing solution containing water and glycol, and Wa Sox Bolisha, or a combination of Linde A abrasive grains, water, 5% Na2CO3, and pitch borisha. It is being said.
このようなラッピング方法は、砥粒径が大きくかつ硬い
鋳鉄ラップを用いるなめ、加工面に深い加工歪と大きな
凹凸が発生しており、次工程のポリシング加工時に多く
の加工量を除去する必要がある。また、上記のポリシン
グ方法は、ボリシャとしてワックスやピッチを用いてい
るため、加工中の摩擦熱や環境の温度変化により平面度
形状が悪化し、平坦な鏡面が達成されない欠点がある。This lapping method uses hard cast iron wraps with large abrasive grains, which causes deep machining distortion and large irregularities on the machined surface, which requires a large amount of machining to be removed during the next polishing process. be. Furthermore, since the polishing method described above uses wax or pitch as the polisher, the flatness shape deteriorates due to frictional heat during processing and environmental temperature changes, and a flat mirror surface cannot be achieved.
一方、前記文献には他のポリシング方法としてポリウレ
タン製研摩クロスとアルカリ性コロイダルシリカ液の組
合せを用いた場合が記載されているが、研摩液にアルカ
リ性の化学薬品を用いているため、作業性が悪く研摩後
のウェハ洗浄も難しいなどの間層がある。On the other hand, the above literature describes another polishing method using a combination of a polyurethane polishing cloth and an alkaline colloidal silica solution, but because the polishing solution uses alkaline chemicals, workability is poor. There are some gaps, such as difficulty in cleaning the wafer after polishing.
本発明の目的は、このような従来の欠点を除去せしめて
、平面度の良好な鏡面加工が可能であると共に作業性の
優れた化合物結晶の研摩方法を提供することにある。It is an object of the present invention to provide a method for polishing compound crystals that eliminates these conventional drawbacks, enables mirror finishing with good flatness, and has excellent workability.
本発明によれば、ラップ材料として軟質金属を、ポリシ
ング条件として水溶性ダイヤモンド砥粒と研摩クロスの
組合せを用いることにより、ラッピング時の大きな表面
凹凸と残留加工歪の発生、ポリシング加工量の増加、ポ
リシング時のワックスによる平面度劣化やアルカリ液に
よる作業性の不良などの問題が解消されることを特徴と
する化合物結晶の研摩方法が得られる。According to the present invention, by using a soft metal as the lapping material and a combination of water-soluble diamond abrasive grains and polishing cloth as the polishing conditions, large surface irregularities and residual machining distortion occur during lapping, and an increase in polishing processing amount. A method for polishing compound crystals is obtained, which eliminates problems such as flatness deterioration due to wax and poor workability due to alkaline liquid during polishing.
！（ｐ、 Ｃｄ Ｔ ｅ結晶素材（直径１０＋＊ｍ、長
さ２０龍）から例えば内周刃切断砥石を用いて、厚さ１
．０ ＋ｓｍの寸法のウェハを切り出す。このウェハの
両表面における切断歪層と形状的な凹凸をラッピングに
より約１００μｍ除去し、表面あらさ１μｍの平坦な梨
地面にする。このラッピングは１粒径５μｍのＳｉＣ砥
粒と水を１：５の割合で混合したラップ剤とＳｎ板を用
い、圧力１００ｇ／ｃｍ２の下で約２０分間行われる。! (p, Cd Te crystal material (diameter 10 + * m, length 20 mm) is cut into a thickness of 1 by using, for example, an internal blade cutting wheel.
．． A wafer with dimensions of 0 + sm is cut out. The cutting strain layer and the geometrical irregularities on both surfaces of this wafer are removed by about 100 μm by lapping to form a flat matte surface with a surface roughness of 1 μm. This lapping is performed for about 20 minutes under a pressure of 100 g/cm 2 using an Sn plate and a lapping agent prepared by mixing SiC abrasive grains each having a grain size of 5 μm and water at a ratio of 1:5.
ラッピングにより生じた表面あらさと加工歪を粒径１μ
ｍの水溶性ダイヤモンド砥粒と純水を１：５０の割合で
混合したボリシ剤及び研摩クロス（例えば５ｔｒｕｅｒ
ｓ社の登録商標ｒＮＡＰＪ ）を用い、圧力１００ ｇ
／ｃｍ２Ｉ）下で１時間のボリジングを行い約１０μｍ
除去する。このポリシング面は平面度３μｍ以下の形状
精度と表面あらさ０．０１μｍ以下の平滑な鏡面に仕上
げられており、赤外線検出素子を製作するためのエツチ
ング前の加工面として十分使用可能であった。The surface roughness and processing distortion caused by lapping are reduced to a particle size of 1 μm.
A polishing agent and polishing cloth (for example, 5 truer
rNAPJ (registered trademark of s company) at a pressure of 100 g.
/cm2I) for 1 hour to obtain a diameter of approximately 10 μm.
Remove. This polished surface had a shape accuracy of 3 μm or less in flatness and a smooth mirror surface with a surface roughness of 0.01 μm or less, and could be fully used as a processed surface before etching for manufacturing an infrared detection element.
一方、同一結晶素材から切り出されたウェハを用いて、
従来の加工方法すなわち、鋳鉄う・ツブとＣ６００砥粒
の組合せでラッピングを行い約１００μｍ除去した面を
調べると、表面あらさ５μｒｎの砂目状表面であった。On the other hand, using wafers cut from the same crystal material,
When lapping was carried out using the conventional processing method, that is, a combination of cast iron tabs and C600 abrasive grains, and approximately 100 μm was removed, the surface was found to have a grained surface with a surface roughness of 5 μrn.
このう・ツブ面を水溶性ダイヤモンド砥粒とＮＡＰ研摩
クロスを用いてボリシ、ングを１時間行い、約１０ ｔ
ｔ ｍ除去した面を調べるとラップ時の深いクレータ部
分やスクラッチが残留しており鏡面にはならなかった。The surface of the tube was polished using water-soluble diamond abrasive grains and NAP polishing cloth for 1 hour, and the surface was polished to approximately 10 tons.
When the removed surface was examined, deep craters and scratches from lapping remained, and it was not a mirror surface.
さらに同一条件で加工量を増やして加工し約３０μｍ除
去した時の面を調べると、鏡面は形成されていたが平面
度は約８μｍとなり、エツチング前の加工面とし、ては
使用不可能であった。Furthermore, when examining the surface obtained by increasing the amount of processing under the same conditions and removing approximately 30 μm, a mirror surface was formed, but the flatness was approximately 8 μm, making it unusable as a processed surface before etching. Ta.
上記実施例においては、ＨｇＣｄＴｅ結晶の面方位につ
いては何も触れなかったが（１００）、（０１０）、（
１１１）面はもちろん他の面についても同様に鏡面が達
成されている。In the above example, nothing was mentioned about the plane orientation of the HgCdTe crystal, but (100), (010), (
111) surface, as well as other surfaces, mirror surfaces have been achieved in the same way.
また上記実施例においては組成がｘ＝０．２の場合につ
いて述べたが、ｘ＝Ｏ〜１．０までの範囲の結晶すなわ
ちＩＩ ｇ Ｔ ｅがらＣｄＴｅの結晶まで同様に鏡面
が得られている。Furthermore, in the above example, the case where the composition was x = 0.2 was described, but mirror surfaces were similarly obtained for crystals in the range of x = O to 1.0, that is, from II g Te to CdTe crystals. .
〔発明の効果、１
本発明の軟質結晶の研摩方法によれば、ラッピンク条件
として軟質金属ラップとＳｉＣ砥粒の組合せを、次工程
のポリシング条件として研摩クロスと水溶性ダイヤモン
ド砥粒の組合せを用いることにより、従来のラッピング
とポリシングにおいて生じていた多大な加工歪の発生、
平面度の悪化、アルカリ薬品の使用などが解消されるた
め、安全な研摩作業と高精度のウェハが得られ、軟質結
晶の鏡面加工にとって極めて有効な手段が得られる。[Effects of the invention, 1. According to the soft crystal polishing method of the present invention, a combination of a soft metal lap and SiC abrasive grains is used as the lapping condition, and a combination of a polishing cloth and water-soluble diamond abrasive grains is used as the polishing condition in the next step. This eliminates the large amount of processing distortion that occurs in conventional lapping and polishing.
Since deterioration in flatness and the use of alkaline chemicals are eliminated, safe polishing operations and high-precision wafers can be obtained, and an extremely effective means for mirror-finishing soft crystals.
Claims (1)
軟質金属のボリシャとＳｉＣ砥粒の組合せを用いてラッ
ピングする工程と、このラッピング工程で得られたウェ
ハの表面を、研摩クロスと水溶性ダイヤモンド砥粒の組
合せを用いてポリシングする工程とを有することを特徴
とする化合物結晶の研摩方法。The surface of a wafer cut into a predetermined shape from a material crystal,
The method includes the steps of lapping using a combination of a soft metal borisha and SiC abrasive grains, and polishing the surface of the wafer obtained in this lapping step using a combination of an abrasive cloth and water-soluble diamond abrasive grains. A method for polishing compound crystals characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61046653A JPS62203752A (en) | 1986-03-03 | 1986-03-03 | Grinding method for compound crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61046653A JPS62203752A (en) | 1986-03-03 | 1986-03-03 | Grinding method for compound crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62203752A true JPS62203752A (en) | 1987-09-08 |
Family
ID=12753274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61046653A Pending JPS62203752A (en) | 1986-03-03 | 1986-03-03 | Grinding method for compound crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62203752A (en) |
-
1986
- 1986-03-03 JP JP61046653A patent/JPS62203752A/en active Pending
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