JPS61256353A - Electrophotographic selenium photosensitive body - Google Patents
Electrophotographic selenium photosensitive bodyInfo
- Publication number
- JPS61256353A JPS61256353A JP9894685A JP9894685A JPS61256353A JP S61256353 A JPS61256353 A JP S61256353A JP 9894685 A JP9894685 A JP 9894685A JP 9894685 A JP9894685 A JP 9894685A JP S61256353 A JPS61256353 A JP S61256353A
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- layer
- alloy
- carrier
- photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、電子写真方式の普通紙複写機および光プリン
タに用いられる電子写真用感光体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an electrophotographic photoreceptor used in electrophotographic plain paper copying machines and optical printers.
近年、オフィス・オートメーションが急速に発展し普及
してきているが、それに伴い、それらの出力機として各
種プリンタの開発が活発にすすめられている。なかでも
、その高速印字性、高画質。2. Description of the Related Art In recent years, office automation has rapidly developed and become popular, and in conjunction with this, various printers have been actively developed as output devices. Above all, its high-speed printing performance and high image quality.
高信頼性、低騒音などの点で、電子写真方式の光プリン
タが注目されている。レーザプリンタは数千性／分以上
の高速プリンタの分野では主流となっている。Electrophotographic optical printers are attracting attention because of their high reliability and low noise. Laser printers have become the mainstream in the field of high-speed printers with speeds of several thousand units per minute or more.
最近、中速から低速（印刷速度で手行／分前後）の小型
光プリンタが相ついで開発されている。これら小型光プ
リンタは主としてオフィス・コンピュータに接続して使
用される。また、日本語ワードプロセッサ、光ディスク
・ファイル・システムの出力機として使われ、高速ファ
クシミリに使用しようという動きもある。さらに、最近
はインテリジェンスな各種機能を持たせうるデジタル普
通紙複写機に対する要望が強いが、その出力部としても
使用される。Recently, small-sized optical printers with medium to low speeds (printing speeds of around 1000 manual prints per minute) have been developed one after another. These small optical printers are mainly used by being connected to office computers. It is also used as a Japanese word processor, an output device for optical disk file systems, and there is also a movement to use it for high-speed facsimile. Furthermore, recently there has been a strong demand for digital plain paper copying machines that can be equipped with various intelligent functions, and they are also used as output units.
光プリンタの光源としては、レーザ光１発光ダイオード
などが用いられるが、その印刷速度の高速性と高画質の
点でレーザ光が多用される。レーザ光としてはＨｅ −
Ｎθレーザ光が主として用いられてきたが、機器の小型
化が要望され最近では半導体レーザ光が使用されるよう
になってきた１、光プリンタは、走査レーザ光または発
光ダイオード・アレイなどを印刷すべき画像に対応して
ｏｎ。As a light source for an optical printer, a laser beam, a light emitting diode, or the like is used, and laser beams are often used because of their high printing speed and high image quality. As a laser beam, He −
Nθ laser light has been mainly used, but semiconductor laser light has recently been used due to the demand for smaller equipment.1 Optical printers print using scanning laser light or light emitting diode arrays. Turn on corresponding to the desired image.
ｏｆｆ制御する部分と、その制御元を受けて帯電された
感光体上に印刷画像に対応した静電ａ像を形成し、その
潜像をトナー像として印刷する電子写真部分とからなる
。電子写真部分は従来の電子写真方式の複写機と同じ構
成でおるが、こ＼に使用される感光体の性能がプリンタ
の印刷速度、印刷画像の画質、安定性を左右する重要な
因子となる。It consists of a section that performs off control, and an electrophotographic section that receives the control source and forms an electrostatic a image corresponding to the print image on a charged photoreceptor, and prints the latent image as a toner image. The electrophotographic part has the same configuration as a conventional electrophotographic copier, but the performance of the photoreceptor used here is an important factor that affects the printer's printing speed, print image quality, and stability. .
光プリンタには、前述のように半導体レーザ光や発光ダ
イオード・アレイが用いられるが、半導体レーザ光の波
長は一７９０ｎｍ前後であり、発光ダイオードの波長は
６６０〜６８０ｎｍ程度である。この様な長波長光に対
しては、従来の主として電子写真式の複写機に適用され
ていた感光体は使用できない。従来の感光体は可視光の
波長領域で高い光感度を有するように光導電性材料を選
び、感光層の構成も工夫されており、そのままでは６６
０ ｎｍ以上の長波長光に対しては光感度が非常に低い
ためである。As mentioned above, the optical printer uses a semiconductor laser beam or a light emitting diode array, and the wavelength of the semiconductor laser beam is about 1,790 nm, and the wavelength of the light emitting diode is about 660 to 680 nm. For such long-wavelength light, photoreceptors that are conventionally applied mainly to electrophotographic copying machines cannot be used. In conventional photoreceptors, photoconductive materials are selected to have high photosensitivity in the visible wavelength region, and the structure of the photosensitive layer is devised.
This is because the photosensitivity to long wavelength light of 0 nm or more is extremely low.
このようカ長波長光に対して好適な感光体に用いられう
る光導電性材料および感光層の構成について種々検討が
進められているが、電子写真特性（帯電電位、光感度、
残留電位など）、疲労特性。Various studies are underway on photoconductive materials and the structure of the photosensitive layer that can be used in photoreceptors suitable for long wavelength light.
residual potential, etc.), fatigue properties.
耐環境性、耐刷性などの点でまだ問題が多い。There are still many problems in terms of environmental resistance, printing durability, etc.
セレン感光体についても検討が進められており、キャリ
ア輸送層としてセレン、キャリア発生層としてセレン・
テルル合金、表面保護層としてゲルマニウム、テルル、
ひ素などとセレンとの合金を用いた多層構造の機能分離
型感光体が提案されている。しかしながら、このような
構成の感光体は波長６６０ ｎｍ以上の長波長光に対す
る電子写真特性は優れているが疲労特性に問題があり、
繰り返し連続使用したときに帯電電位が低下してくる欠
点があった。Studies are also underway on selenium photoreceptors, with selenium as the carrier transport layer and selenium as the carrier generation layer.
Tellurium alloy, germanium, tellurium as surface protective layer,
A functionally separated photoreceptor with a multilayer structure using an alloy of arsenic or the like and selenium has been proposed. However, although a photoreceptor with such a configuration has excellent electrophotographic properties for long wavelength light of 660 nm or more, it has problems with fatigue properties.
There was a drawback that the charging potential decreased when used repeatedly and continuously.
本発明の目的は、前述の欠点を除去して、６６０ｎｍ〜
８００皿程度の長波長光領域において優れた電子写真特
性を有し、かつ繰シ返し連続使用時にも帯電電位の低下
のあられれない電子写真用セレン感光体を提供すること
にある。The object of the present invention is to eliminate the above-mentioned drawbacks and to
It is an object of the present invention to provide a selenium photoreceptor for electrophotography which has excellent electrophotographic properties in a long wavelength light region of about 800 plates and which does not cause a decrease in charging potential even when used repeatedly and continuously.
本発明の目的は、導電性基体の上に、セレンまたは１０
重量％以下のテルルを含有するセレン・テルル合金から
なるキャリア輸送層、２０〜５０重量％のテルルを含有
するセレン・テルル合金からなるキャリア発生層、ゲル
マニウム、テルルまたはひ素とセレンとの合金からなる
表面保護層とを順次積層してなる感光体において、前記
キャリア発生層と前記表面保護層との間に、ナ） ＩＪ
ウムを２００〜５００重量ｐｐｍ含有するセレン・ナト
リウム合金からなる中間層を形成し介在せしめることに
より達成される。The object of the present invention is to apply selenium or 10
A carrier transport layer made of a selenium-tellurium alloy containing tellurium of 20-50% by weight or less, a carrier generation layer made of a selenium-tellurium alloy containing 20 to 50 weight% tellurium, a carrier generation layer made of germanium, tellurium, or an alloy of arsenic and selenium. In the photoreceptor formed by sequentially laminating surface protective layers, between the carrier generation layer and the surface protective layer, n) IJ.
This is achieved by forming and interposing an intermediate layer made of a selenium-sodium alloy containing 200 to 500 ppm by weight of aluminum.
以下、本発明を実施例によシ図を参照しながら説明する
。Hereinafter, the present invention will be explained by way of examples with reference to the drawings.
オニ図は本発明の感光体の概念的断面図であり、ｌは導
電性基体、２はセレンまたけセレン・テルル合金からな
るキャリア輸送層、３はセレン・テルル合金からなるキ
ャリア発生層、４はセレン・ナトリウム合金からなる中
間層、５はゲルマニウム、テルルまたはひ素とセレンと
の合金からなる表面保護層を示す。The oni diagram is a conceptual cross-sectional view of the photoreceptor of the present invention, where l is a conductive substrate, 2 is a carrier transport layer made of a selenium-straddling selenium-tellurium alloy, 3 is a carrier generation layer made of a selenium-tellurium alloy, and 4 5 is an intermediate layer made of a selenium-sodium alloy, and 5 is a surface protective layer made of germanium, tellurium, or an alloy of arsenic and selenium.
導電性基体１としての外径１２０ｍのアルミニウム円筒
の温度を約６０℃に保持し、その外表面にセレンを膜厚
５０μｍに真空蒸着でつけてキャリア輸送層２とした。The temperature of an aluminum cylinder with an outer diameter of 120 m as the conductive substrate 1 was maintained at about 60° C., and selenium was applied to the outer surface of the cylinder to a thickness of 50 μm by vacuum deposition to form the carrier transport layer 2.
その上にテルルを４４重Ｊｕｌ含有するセレン・テルル
合金を膜厚０．３１１ｍに真空中でフラッシュ蒸着しキ
ャリア発生層３とした。さらにこの上に、牙１表に示す
材料組成および膜厚の組み合せで中間層４９表面保護Ｎ
５を順次真空中のフラッシュ蒸着で形成し、１０種類の
感光体を作製した。また比較例として、中間層４を設け
ず、表面保獲層５を直接形成した感光体を作製した。Thereon, a selenium-tellurium alloy containing 44 times Jul of tellurium was flash-deposited in vacuum to a thickness of 0.311 m to form the carrier generation layer 3. Furthermore, on top of this, the intermediate layer 49 surface protection layer is formed by combining the material composition and film thickness shown in Table 1.
5 were sequentially formed by flash vapor deposition in a vacuum to produce 10 types of photoreceptors. As a comparative example, a photoreceptor was produced in which the intermediate layer 4 was not provided and the surface retention layer 5 was directly formed.
第１表
これらの感光体試料を８５０ＶＫ帯電し、波長’ｙｓｏ
ｎｍの単色光を照射して、帯電電位が匙に減衰するまで
の半減衰露光量ＥＶ２）および、さらに露光量が５μＪ
／−になるまで照射したときの残留電位Ｖｒを測定した
。・
次に、感光体の繰り返し連続使用時の疲労特性をみるた
めに、感光体を円筒軸のまわシに周速１２０ ｍｍ ７
秒で回転させながら、感光体１回転中に、帯電−波長’
７８０ｎｍの単色光５μ、Ｔ／ｃｄ露光−青色光除電を
１サイクルとする負荷を１回与えるというプロセスを、
連続して２５０回繰り返し、初期帯電電位と２５０ｆイ
クル負荷後の帯電電位との差△■８および２５０サイク
ル目の単色光露光後の電位Ｖｖ （残留電位Ｖｒに相当
する）を測定した。これらの測定結果を第２表に示す。Table 1 These photoreceptor samples were charged at 850 VK and the wavelength 'yso
When irradiated with nm monochromatic light, the half-attenuation exposure amount EV2) until the charged potential attenuates to a spoonful, and the further exposure amount is 5 μJ.
The residual potential Vr was measured when irradiation was performed until the voltage became /-.・Next, in order to examine the fatigue characteristics of the photoconductor during repeated and continuous use, the photoconductor was rotated around a cylindrical shaft at a circumferential speed of 120 mm 7
While rotating the photoreceptor in seconds, the charge minus the wavelength'
The process of applying a load once with 5μ of 780nm monochromatic light, T/CD exposure and blue light static elimination as one cycle,
This was repeated 250 times in succession to measure the difference Δ■8 between the initial charging potential and the charging potential after 250 cycles of loading, and the potential Vv (corresponding to the residual potential Vr) after the 250th cycle of monochromatic light exposure. The results of these measurements are shown in Table 2.
△ＶＥ３の負号は帯電電位の低第２表
波長′７８０ｎｍという長波長光に対して、電子写真特
性は試料Ｎ１９，１０の残留電位■、を除き比較例を含
めてすべて良好であり、実施例、比較例どちらの構成の
感光体も長波長光に対して有効であることが判る。The negative sign of △VE3 indicates the low charging potential in Table 2.The electrophotographic characteristics are all good for the long wavelength light of 780 nm, including the comparative examples, except for the residual potential ■ of samples N19 and 10. It can be seen that both the photoreceptors of Example and Comparative Example are effective against long wavelength light.
次に、感光体を繰り返し連続使用したときあられれる疲
労特性のうち、帯に１位の変動を示す△Ｖ８は、本発明
による中間層番を有しない比較例の場合、実用上問題に
なる程大きい。また、中間層を有するがナトリウムの含
有量が１００重量ｐｐｍと少ない試料随１〜３の場合に
も、帯電電位の変動を抑制する効果はなく△ＶＦｌは大
きい。中間層のナトリウム含有量が２００重ｆｊｋ ｐ
ｐｍの試料Ｎａ４〜６では抑制効果があられれ△■８は
小さくなり、５００重量ｐｐｍの試料Ｎｌ’７〜１ｏで
は△ｖ、は非常に小さくなシ抑制効果が顕著であること
が判る。しかしながら、中間層のす） ＩＪウム含有量
が５００重量ｐｐｍと多い場合には、中間層の膜厚が厚
くなると試料Ｎ１９．ＩＯＫみられるようにｖｒ、 Ｖ
ｖが増大し好ましくない。帯電電位の変動△Ｖｓ、中間
層のナトリウム含有蓋および中間層の膜厚の関係をグラ
フ化して第２図に示す。図において、０印は中間層なし
の場合、実線９点線、破線はそれぞれナトリウム含有量
１００重量ｐｐｍ 、 ２０Ｏｚ量ｐｐｍ 、 ５００
重量ｐｐｍの場合である。Next, among the fatigue characteristics that occur when a photoreceptor is used repeatedly and continuously, △V8, which shows the largest variation in the band, is so large that it becomes a practical problem in the case of the comparative example that does not have the intermediate layer number according to the present invention. big. Further, in the case of Samples 1 to 3, which have an intermediate layer but have a small sodium content of 100 ppm by weight, there is no effect of suppressing fluctuations in charging potential, and ΔVFl is large. Sodium content in the middle layer is 200 fjk p
It can be seen that the suppressing effect is small in samples Na4-6 of pm, and Δ■8 is small, and the suppressing effect of Δv is very small in samples Nl'7-1o of 500 ppm by weight. However, when the IJ content in the intermediate layer is as high as 500 ppm by weight, sample N19. VR, V as you can see IOK
v increases, which is undesirable. The relationship between the change in charging potential ΔVs, the sodium-containing lid of the intermediate layer, and the film thickness of the intermediate layer is shown in a graph in FIG. In the figure, the 0 mark indicates the case without an intermediate layer, the solid 9-dot line, and the broken line indicate the sodium content of 100 ppm by weight, 20 oz ppm, and 500 oz, respectively.
This is the case in ppm by weight.
本発明による中間層の効果の生ずる理由は以下のように
考えられる。すなわち、中間層４のない場合、露光によ
りキャリア発生層３内に励起されたキャリアのうち、電
子は表面保護層５へ注入されるが、このとき表面保護層
への電子の注入が充分行われず両層の界面に電子が蓄積
し、感光体が繰シ返し連続使用されると、すなわち帯電
−露光が連続して繰り返えされると、この電子の蓄積が
増大して帯電電位が低下することになる。この界面に、
電子の動きゃすい物質であるセレン・ナトリウム合金か
らなる中間層４を介在せしめると電子の注入が充分行な
われるようになり、電子の蓄積を少なくし、帯電電位の
低下を低減することが可能となる。しかし、一方このセ
レン・ナトリウム合金の中間層は正孔のトラップを形成
するので中間層４の膜厚が厚すぎると、残留電位が増大
することになる。The reason for the effect of the intermediate layer according to the present invention is considered as follows. That is, in the case where there is no intermediate layer 4, electrons are injected into the surface protection layer 5 among the carriers excited in the carrier generation layer 3 by exposure, but at this time, electrons are not sufficiently injected into the surface protection layer. Electrons accumulate at the interface between both layers, and when the photoreceptor is used repeatedly, that is, when charging and exposure are repeated, the accumulation of electrons increases and the charging potential decreases. become. At this interface,
By interposing the intermediate layer 4 made of a selenium-sodium alloy, which is a material in which electrons move easily, sufficient injection of electrons can be carried out, reducing the accumulation of electrons and reducing the drop in charging potential. Become. However, since the selenium-sodium alloy intermediate layer forms hole traps, if the intermediate layer 4 is too thick, the residual potential will increase.
このような、セレ／・ナトリウム合金からなる中間層の
作用は表面保護層の材料が本実施例のセレン・テルル合
金に限られることはなく、セレン・ゲルマニウム合金、
セレン・ひ素合金の場合でも同様に有効である。The effect of the intermediate layer made of the selenium/sodium alloy is not limited to the selenium/tellurium alloy of this embodiment, and the material of the surface protective layer is not limited to the selenium/tellurium alloy of this embodiment.
It is similarly effective in the case of selenium-arsenic alloys.
本発明によれば、導電性基体上に、セレンまたは１０重
量％以下のテルルを含有するセレン・テルル合金からな
るキャリア輸送層、２０〜５０Ｍ量チのテルルを含有す
るセレン・テルル合金からなるキャリア発生層、セレン
・テルル合金またはセレン・ゲルマニウム合金またはセ
レン・ひ素合金からなる表面保護層を順次積層してなる
電子写真用感光体において、キャリア発生層と表面保護
層との間にセレン・ナトリウム合金からなる中間層を形
成し介在せしめ、感光体露光時、キャリア発生層内に励
起されたキャリアのうち電子の表面保護層への注入がス
ムーズに行われるようにし、感光体の繰ｐ返し使用時に
おいても、キャリア発生層と表面保護層との界面での電
子の蓄積をなくして、帯電電位の変動が生じないように
する。かくして、本発明の構成の感光体は、６６０〜８
００ｎｍ程度の長波長光に対して、良好な電子写真特性
を有し、かつ、繰り返し連続使用しても帯電電位の低下
、残留電位の増大のみられない優れた感光体となる。According to the present invention, a carrier transport layer made of selenium or a selenium-tellurium alloy containing tellurium in an amount of 10% by weight or less, and a carrier made of a selenium-tellurium alloy containing tellurium in an amount of 20 to 50 M are provided on a conductive substrate. In an electrophotographic photoreceptor formed by sequentially laminating a generation layer, a surface protection layer made of a selenium-tellurium alloy, a selenium-germanium alloy, or a selenium-arsenic alloy, a selenium-sodium alloy is added between the carrier generation layer and the surface protection layer. An intermediate layer consisting of is formed and interposed therebetween, so that during exposure of the photoreceptor, electrons from carriers excited in the carrier generation layer are smoothly injected into the surface protective layer, and when the photoreceptor is used repeatedly. Also, by eliminating the accumulation of electrons at the interface between the carrier generation layer and the surface protective layer, fluctuations in the charging potential are prevented. Thus, the photoreceptor having the structure of the present invention has 660 to 8
This provides an excellent photoreceptor that has good electrophotographic properties for long wavelength light of about 0.00 nm, and shows no decrease in charging potential or increase in residual potential even after repeated and continuous use.
本発明による感光体は、最近急速に普及しているオフィ
ス・オートメーションの分野において、出力機として急
増している牛導体レーザまたは発光ダイオードを光源と
する光プリンタに用いられる電子写真用感光体として好
適であり、この分野の発展に非常に貢献するものである
。The photoreceptor according to the present invention is suitable as an electrophotographic photoreceptor used in optical printers that use conductor lasers or light emitting diodes as light sources, which are rapidly increasing as output devices in the field of office automation, which has recently become rapidly popular. This will greatly contribute to the development of this field.
オニ図は本発明の感光体の概念的断固図、第２図は中間
層のナトリウム含有量、中間層の膜厚と感光体の帯電電
位の変動△Ｖｆ１との関係を示す線図である。
１・・・導電性基体、２・・・キャリア輸送層、３・・
・キャリア発生層、４・・・中間層、５・・・表面保護
層。
５１図The Oni diagram is a conceptual diagram of the photoconductor of the present invention, and FIG. 2 is a diagram showing the relationship between the sodium content of the intermediate layer, the thickness of the intermediate layer, and the variation ΔVf1 in the charging potential of the photoconductor. 1... Conductive substrate, 2... Carrier transport layer, 3...
- Carrier generation layer, 4... intermediate layer, 5... surface protective layer. Figure 51
Claims (1)
ルルを含有するセレン・テルル合金からなるキャリア輸
送層、２０〜５０重量％のテルルを含有するセレン・テ
ルル合金からなるキャリア発生層、セレン・テルル合金
またはセレン・ゲルマニウム合金またはセレン・ひ素合
金からなる表面保護層を順次積層してなる電子写真用感
光体において、前記キャリア発生層と前記表面保護層と
の間にセレン・ナトリウム合金からなる中間層を介在せ
しめることを特徴とする電子写真用セレン感光体。 ２）特許請求の範囲第１項記載の感光体において、中間
層がナトリウムを２００〜５００重量ｐｐｍ含有するセ
レン・ナトリウム合金からなることを特徴とする電子写
真用セレン感光体。[Scope of Claims] 1) A carrier transport layer made of selenium or a selenium-tellurium alloy containing 10% by weight or less of tellurium on a conductive substrate, a selenium-tellurium alloy containing 20 to 50% by weight of tellurium. In an electrophotographic photoreceptor comprising a carrier generation layer consisting of a carrier-generating layer of A selenium photoreceptor for electrophotography, characterized by interposing an intermediate layer made of a selenium-sodium alloy. 2) A selenium photoreceptor for electrophotography according to claim 1, wherein the intermediate layer is made of a selenium-sodium alloy containing 200 to 500 ppm by weight of sodium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9894685A JPS61256353A (en) | 1985-05-10 | 1985-05-10 | Electrophotographic selenium photosensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9894685A JPS61256353A (en) | 1985-05-10 | 1985-05-10 | Electrophotographic selenium photosensitive body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61256353A true JPS61256353A (en) | 1986-11-13 |
| JPH0535424B2 JPH0535424B2 (en) | 1993-05-26 |
Family
ID=14233264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9894685A Granted JPS61256353A (en) | 1985-05-10 | 1985-05-10 | Electrophotographic selenium photosensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61256353A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63279258A (en) * | 1987-05-11 | 1988-11-16 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
| US4837099A (en) * | 1987-10-26 | 1989-06-06 | Fuji Electric Co., Ltd. | Multilayer photoconductor for electrophotography |
| JPH01219753A (en) * | 1988-02-26 | 1989-09-01 | Fuji Electric Co Ltd | Electrophotographic selenic sensitive body |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853686A (en) * | 1971-11-08 | 1973-07-27 | ||
| JPS58174952A (en) * | 1982-04-08 | 1983-10-14 | Fuji Electric Co Ltd | Electrophotographic receptor |
| JPS6043662A (en) * | 1983-08-19 | 1985-03-08 | Fuji Electric Co Ltd | Selenium photosensitive body for electrophotography |
| JPS60252353A (en) * | 1984-05-29 | 1985-12-13 | Nippon Mining Co Ltd | Electrophotographic sensitive senlenium and selenium photosensitive film and its manufacture |
-
1985
- 1985-05-10 JP JP9894685A patent/JPS61256353A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853686A (en) * | 1971-11-08 | 1973-07-27 | ||
| JPS58174952A (en) * | 1982-04-08 | 1983-10-14 | Fuji Electric Co Ltd | Electrophotographic receptor |
| JPS6043662A (en) * | 1983-08-19 | 1985-03-08 | Fuji Electric Co Ltd | Selenium photosensitive body for electrophotography |
| JPS60252353A (en) * | 1984-05-29 | 1985-12-13 | Nippon Mining Co Ltd | Electrophotographic sensitive senlenium and selenium photosensitive film and its manufacture |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63279258A (en) * | 1987-05-11 | 1988-11-16 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
| US4837099A (en) * | 1987-10-26 | 1989-06-06 | Fuji Electric Co., Ltd. | Multilayer photoconductor for electrophotography |
| JPH01219753A (en) * | 1988-02-26 | 1989-09-01 | Fuji Electric Co Ltd | Electrophotographic selenic sensitive body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0535424B2 (en) | 1993-05-26 |
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