JPS61220291A - Structure of zns-mn mixed pellet - Google Patents
Structure of zns-mn mixed pelletInfo
- Publication number
- JPS61220291A JPS61220291A JP60061682A JP6168285A JPS61220291A JP S61220291 A JPS61220291 A JP S61220291A JP 60061682 A JP60061682 A JP 60061682A JP 6168285 A JP6168285 A JP 6168285A JP S61220291 A JPS61220291 A JP S61220291A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- concentration
- zns
- mixed
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000008188 pellet Substances 0.000 title claims description 38
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔概要〕
本発明は、ＺｎＳ；Ｍ％混合ペレットを用いて電子ビー
ム蒸着によＪ） ｆｆ５５２Ｍ％薄膜を形成する際に、
該薄膜に垂直方向のＭｎ濃直分布を一定にすることので
きる２％ＳＵＮ％混合ペレットを提供するもので、混合
ペレットの高さ方向の濃度分布に勾配をもたせることに
よ）問題の解決を図っている。[Detailed Description of the Invention] [Summary] The present invention provides the following method when forming a ZnS; M% thin film by electron beam evaporation using a ZnS;
This method provides a 2% SUN% mixed pellet that can make the Mn concentration distribution in the vertical direction constant in the thin film, and solves the problem by creating a gradient in the concentration distribution in the vertical direction of the mixed pellet. I'm trying.
本発明は１Ｉｎｓ Ｋ Ｍｎを混合、焼結してなるＺｎ
Ｓ：Ｍ％混合ペレットの構造に関するものである。The present invention is made by mixing and sintering 1Ins K Mn.
This relates to the structure of S:M% mixed pellets.
この２％Ｊ ＋＆ｓ混合ペレットは、例えばＭＬ （エ
レクトロルミネッセンス）ハネルの発光層（ｊｉｇｓ
；Ｊ／ｓ薄膜）形成に用いられる。この場合のＺ％Ｊ
ｒ ｕｓ薄膜形成は、電子ビーム蒸着により行われる。This 2% J+&s mixed pellet can be used, for example, in the luminescent layer (jigs) of ML (electroluminescence) Hanel.
;J/s thin film) formation. Z%J in this case
rus thin film formation is performed by electron beam evaporation.
この種の用途に使用される従来のＺｎＳ；Ｍ％混合ペレ
ットは、Ｍ％がｇ％Ｓペレット中に均一に分布した構造
となっている。Conventional ZnS; M% mixed pellets used for this type of application have a structure in which M% is uniformly distributed in g%S pellets.
ところが、このような構造の従来のＺｎＳＵＮ％混合ペ
レットを用いて電子ビーム蒸着によＪ） ＺｓＳ ；Ｍ
ｎ薄膜を形成する場合、ＺｎＳとｈではＺｓＳ（Ｄ方が
Ｍ％に比べて昇華し易いため、蒸着初期の膜ではＭｎ濃
直が低く、蒸着の進行につれて、ペレットにおけるｈの
相対濃度が高くなることにより蒸着された薄膜中のＭｎ
濃直が高くなシ、２％Ｓ；Ｍ％薄膜の薄膜面と垂直方向
のｈ濃度分布が異なるという欠点がおった。第３図はこ
の薄膜中のＭｎ濃直分布を示すグラフで、膜厚が２倍に
なるとム濃度も約２倍になることを示している。However, using conventional ZnSUN% mixed pellets with such a structure, J) ZsS ; M
When forming an n thin film, between ZnS and h, ZsS (D is easier to sublime than M%, so the Mn concentration is low in the film at the initial stage of evaporation, and as the evaporation progresses, the relative concentration of h in the pellet increases. Mn in the thin film deposited by
There were disadvantages in that the density was high and the h concentration distribution in the direction perpendicular to the thin film surface of the 2% S; M% thin film was different. FIG. 3 is a graph showing the Mn concentration distribution in this thin film, showing that as the film thickness doubles, the Mn concentration also approximately doubles.
本発明は、上述の問題点を解決するためのもので、第１
図に例示したように、ペレット高さ方向のＭｎ濃直分布
に勾配を設けている。The present invention is intended to solve the above-mentioned problems.
As illustrated in the figure, a gradient is provided in the Mn concentration distribution in the pellet height direction.
ペレット高さ方向のｈ濃度分布を適当に設定すれば、仁
のＺｎＳＵＮ％混合ペレットを用いて形成される２％Ｓ
ＵＮ％薄膜の薄膜面に垂直方向のＭ％分布を一定にする
ことができる。すなわち、ｆｆ５Ｓ；Ｍｎ混混合ペッツ
＋２）電子ビーム蒸着初期に使用する部分のＭｎ濃直を
高く、蒸着の進行に従って使用する部分のＭｎ濃直を低
くすればＭ％分布を一定にすることができる。If the h concentration distribution in the pellet height direction is set appropriately, 2%S
The M% distribution in the direction perpendicular to the thin film surface of the UN% thin film can be made constant. That is, ff5S; Mn mixed PET+2) The M% distribution can be made constant by increasing the Mn concentration in the part used at the beginning of electron beam evaporation and lowering the Mn concentration in the part used as the evaporation progresses. .
以下、第１図及び第２図に関連して本発明の詳細な説明
する。The present invention will now be described in detail with reference to FIGS. 1 and 2.
前述のように、従来構造のＺｎＳ；Ｍ％混合ペレットを
使用した場合は、形成される薄膜の膜厚が２倍になると
Ｍｎ濃直も約′２倍になる。このことから、ペレット中
のｈ濃度の分布を、設定膜厚の力蒸着したときにもとの
濃度ＯＡとなるようにすれば良−ことが分る。このＭｎ
濃直分布を実現するためには、
−Ｍ−
Ｃ＝ａ０・２ ｊｌ）
但し、ＣＡＭ外濃度
６口；基準Ｍｎ濃直
Ｌｏ；ペレットの高さ
２；ペレット表面からの距離
なる関係をもつようにペレット中のｈ濃度に勾配をつけ
れば良い。As mentioned above, when a ZnS;M% mixed pellet having a conventional structure is used, when the thickness of the formed thin film is doubled, the Mn concentration also becomes approximately 2 times as large. From this, it can be seen that the h concentration distribution in the pellet can be adjusted so that it becomes the original concentration OA when the predetermined film thickness is force-deposited. This Mn
In order to realize the concentration distribution, -M- C=a0・2 jl) However, the following relationship should be established: CAM outside concentration 6; reference Mn concentration Lo; pellet height 2; distance from the pellet surface. It is sufficient to create a gradient in the h concentration in the pellet.
本発明はこの原理金具体化することによシ問題の解決を
図るもので、次に実施例について説明する。The present invention aims to solve this problem by embodying this principle in metal.Examples will now be described.
第１図は本発明に係るＺｎＳ；Ｍ％混合ペレット１の正
面図で、該ＺｓＳ：Ｍ％混合ペレット１は、それぞれＭ
ｎ濃直の異なる同一外形の５つのペレットＩＡ、 ＩＢ
、ＩＣを高さ方向に積み重ねて１体化してなる。各ペレ
ットのＺｔＩｉに対するＭ％のｗｔ％は、ペレット１Ａ
が［Ｌ５ｗｔ％、ペレット１Ｂが１．０ｗ４％。FIG. 1 is a front view of a ZnS;M% mixed pellet 1 according to the present invention, and the ZsS:M% mixed pellet 1 is
Five pellets IA, IB with the same external shape and different concentrations
, ICs are stacked in the height direction and integrated into one. The wt% of M% with respect to ZtIi of each pellet is pellet 1A
is [L5wt%, pellet 1B is 1.0w4%.
ペレット１ＣがｚｖｐｔＴｏとなっている。このような
三段階Ｍｎ濃直分布の採用によシ、形成薄膜のＭｎ濃直
分布（薄膜面と垂直方向の）ｔ−近似的に一定とするこ
とができ、実用上支障のない効果が得られる。Pellet 1C is zvptTo. By adopting such a three-stage Mn concentration distribution, it is possible to make the Mn concentration distribution (in the direction perpendicular to the thin film surface) approximately constant in the formed thin film, and an effect that does not cause any practical problems can be obtained. It will be done.
このような構成の２％Ｓ；Ｍｎ混合ペレットは、第２図
に示す工程によシ形成することができる。A 2% S:Mn mixed pellet having such a structure can be formed by the process shown in FIG.
すなわち、Ｍ、濃度２．Ｏｗｔ ％ （Ｄ ＺｓＳ ；
Ｍ＊粉末２Ｃ。That is, M, concentration 2. Owt% (DZsS;
M*Powder 2C.
ｈ濃度１．０−一のＺｎＳ：Ｍ％粉末２Ｅ、及びＭｎ濃
直ａ、５ｖｔ％のＺｎＳＵＮ％粉末２Ａを第２図（ａ）
に示すよりに下Ｗ２Ｏ３内に三重構造となるように挿入
し、該下型１０１に対向する土星１０２を第２図（＆）
に示すように下降させて加圧成形（圧力５トンで１０秒
間程度）を行なった後、成形品を取シ出して真空中（Ｉ
Ｘ １Ｏ−ｓＰａ以下）で４５０℃、１時間程度の加
熱を行い、次にＡ？ガス中で１１００°Ｃ２時間程度の
焼時間性うことによＦ）＊ＪｌｓＳ：Ｍ％混合ペレット
１を得ることができる。Figure 2 (a)
The Saturn 102 facing the lower mold 101 is inserted into the lower W2O3 as shown in FIG.
As shown in Figure 2, after lowering the product and performing pressure molding (approximately 10 seconds at a pressure of 5 tons), the molded product was taken out and placed in a vacuum (I
Heating was performed at 450°C for about 1 hour at a temperature of A? F)*JlsS:M% mixed pellets 1 can be obtained by baking at 1100° C. for about 2 hours in gas.
〔発明の効果〕
以上述べたように、本発明によれば、電子ビーム蒸着で
形成した！；外ＳｒＭ％薄膜内の垂直方向の地分布を均
一にすることが可能で、ＥＬパネルの発光層形成等に適
用した場合発光特性の良いＥＬパネルを得ることができ
る。[Effects of the Invention] As described above, according to the present invention, it is formed by electron beam evaporation! It is possible to make the vertical distribution within the outer SrM% thin film uniform, and when applied to the formation of a light-emitting layer of an EL panel, an EL panel with good light-emitting characteristics can be obtained.
第１図状本発明の実施例のＺｎＳ；Ｍ％混合ペレットの
正面図、
第２図−）、（＆）は同ＺｎＳ；Ｍ％混合ペレットの成
形工程図、
第５図は従来のＺｎＳ；Ｍ％混合ペレットを用いて形成
した薄膜のＭｎ濃直分布図で、
図中、
１はＺｎＳ：Ｍ％混合ペレット、
ＩＡ、 １１１ＧはそれぞれＭ％ｍ度の異なるペレット
で６る。Figure 1 is a front view of the ZnS;M% mixed pellet of the embodiment of the present invention; Figure 2-) and (&) are the molding process diagrams of the same ZnS;M% mixed pellet; Figure 5 is the conventional ZnS; This is a Mn concentration distribution diagram of a thin film formed using M% mixed pellets. In the figure, 1 is a ZnS:M% mixed pellet, IA, 111G are pellets with different M% m degrees, respectively.
Claims (1)
使用される混合ペレットにおいて、 該ペレットの高さ方向の濃度分布に勾配をもたせたこと
を特徴とするＺｎＳ；Ｍｎ混合ペレットの構造。 ２、電子ビーム蒸着初期に使用する部分のＭｎ濃直を高
く、該蒸着の進行に従って使用する部分のＭｎ濃度を低
くした特許請求の範囲第１項記載のＺｎＳ；Ｍｎ混合ペ
レットの構造。 ３、ペレットの高さ方向のＭｎ濃度分布の勾配が、Ｃ＝
ａ＿０・２＾２＾−＾２＾ｘ＾／＾１＾＿＾０（Ｃ＝Ｍ
ｎ濃度，ａ＿０＝基準順Ｍｎ濃度，ｌ＿０＝ペレットの
高さ，ｘ＝ペレット表面からの距離）である特許請求の
範囲第１項記載のＺｎＳ；Ｍｎ混合ペレットの構造。[Claims] 1. A mixed pellet made by mixing and sintering ZnS with Mn and used for electron beam evaporation, characterized in that the pellet has a gradient in its concentration distribution in the height direction; Structure of Mn mixed pellet. 2. The structure of the ZnS;Mn mixed pellet according to claim 1, wherein the Mn concentration is high in the portion used in the initial stage of electron beam evaporation, and the Mn concentration is lowered in the portion used as the evaporation progresses. 3. The slope of the Mn concentration distribution in the pellet height direction is C=
a_0・2^2^-^2^x^/^1^_^0 (C=M
The structure of the ZnS;Mn mixed pellet according to claim 1, wherein n concentration, a_0=standard Mn concentration, l_0=height of the pellet, x=distance from the pellet surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60061682A JPS61220291A (en) | 1985-03-26 | 1985-03-26 | Structure of zns-mn mixed pellet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60061682A JPS61220291A (en) | 1985-03-26 | 1985-03-26 | Structure of zns-mn mixed pellet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61220291A true JPS61220291A (en) | 1986-09-30 |
Family
ID=13178277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60061682A Pending JPS61220291A (en) | 1985-03-26 | 1985-03-26 | Structure of zns-mn mixed pellet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220291A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004124252A (en) * | 2002-04-22 | 2004-04-22 | Snecma Moteurs | Method of forming ceramic coating on substrate by electron-beam physical vapor deposition |
| JP2009149975A (en) * | 2007-11-26 | 2009-07-09 | Hoya Corp | Method for forming vapor-deposition film, method for producing optical member, and optical member |
-
1985
- 1985-03-26 JP JP60061682A patent/JPS61220291A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004124252A (en) * | 2002-04-22 | 2004-04-22 | Snecma Moteurs | Method of forming ceramic coating on substrate by electron-beam physical vapor deposition |
| JP2009149975A (en) * | 2007-11-26 | 2009-07-09 | Hoya Corp | Method for forming vapor-deposition film, method for producing optical member, and optical member |
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