JPS61204544A - Quantitative determination method for free carbon in silicon carbide - Google Patents
Quantitative determination method for free carbon in silicon carbideInfo
- Publication number
- JPS61204544A JPS61204544A JP60044727A JP4472785A JPS61204544A JP S61204544 A JPS61204544 A JP S61204544A JP 60044727 A JP60044727 A JP 60044727A JP 4472785 A JP4472785 A JP 4472785A JP S61204544 A JPS61204544 A JP S61204544A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- sample
- free carbon
- determined
- obtd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract 11
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract 9
- 238000004445 quantitative analysis Methods 0.000 title description 2
- 238000002835 absorbance Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 239000000523 sample Substances 0.000 abstract description 23
- 239000000843 powder Substances 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000000862 absorption spectrum Methods 0.000 abstract description 2
- 239000013074 reference sample Substances 0.000 abstract 2
- 238000000465 moulding Methods 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 238000000815 Acheson method Methods 0.000 description 3
- 238000011002 quantification Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000013068 control sample Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000005580 one pot reaction Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
Abstract
Description
【発明の詳細な説明】
（ａ）産業上の利用分野
−ｋ ｎ ［１８ｉ＋ ｗ＆ ｆキ舎 ｒＱｉｌ’
り出ｒｙｚ ’Ｍ 麿鉗Ｉｔ’ 査θ）中 Ｉｌ辻に関
する。 Ｓａｃの高密度焼結体を得るには少量の遊離
炭素が必要とされ、その量によって焼結体の特性が変る
ので、炭素の定量化は重要である。[Detailed description of the invention] (a) Industrial application field-k n [18i+ w&fkisha rQil'
Ride ryz 'M Marowari It' investigation θ) middle Il Tsuji related. Quantification of carbon is important because a small amount of free carbon is required to obtain a high-density sintered body of SAC, and the properties of the sintered body change depending on the amount.
（ｂ）従来技術
従来ＳｉＣ中の遊ｌｌｌ炭素、Ｓ ＋ ０２の分析はＪ
ＩＳＲ８１２４に従い化学分析で実施されている。この
ＪＩＳ法はＳｉＣが粗い粒の場合はｉｓ炭素（以下ｆ−
ｃという）の定量として問題ないが、焼結体原料のよう
に、ｔｌｉ微粉（例えばｌｐｍ以下）となると ＪＩＳ
法では誤差が大きくなる。この誤差はＪＩＳではＳｉＣ
を酸素気流中８５０℃で処理し、ｆ−ｃを燃焼させるこ
とにより求めているが、ＳｉＣが１ｇｍ以下の超微粉の
場合、ｆ−ｃのみならず１部ＳｉＣも燃焼することに起
因する。(b) Prior art Conventional analysis of free carbon, S + 02, in SiC was conducted using J
Chemical analysis has been carried out according to ISR8124. This JIS method uses is carbon (hereinafter f-
However, when it comes to tli fine powder (e.g. lpm or less), such as raw materials for sintered bodies, JIS
method, the error will be large. This error is defined as SiC in JIS.
It is determined by treating FC at 850° C. in an oxygen stream and burning f-c. However, in the case of ultrafine powder containing SiC of 1 gm or less, not only f-c but also a portion of SiC is combusted.
（Ｃ）発明が解決しようとする問題点
本発明は微粉の５ｉＣ１特にＩＪＬｍ以下のような超微
粉の場合でも誤差の少いｆ−ｃ定量ができる分析法を提
供するものである。(C) Problems to be Solved by the Invention The present invention provides an analytical method that can perform f-c quantification with little error even in the case of ultrafine powders such as 5iC1 or less, especially IJLm or less.
（ｄ）問題を解決するための手段
本発明においては赤外分光光度計、望ましくは測定デー
タの解析が容易なフーリエ変換赤外分光光度計（以下Ｆ
Ｔ−ＩＲという）を用い、透過法によって定量分析を行
う。(d) Means for solving the problem In the present invention, an infrared spectrophotometer, preferably a Fourier transform infrared spectrophotometer (hereinafter F
Quantitative analysis is performed using a transmission method (referred to as T-IR).
ＦＴ−ＩＲ透過法は周知のように赤外線に対して透明な
ＫＢｒ粉末に分析しようとするＳｉＣ粉末を所定量混合
し、ディスク状に成形し、測定試料とする。In the FT-IR transmission method, as is well known, a predetermined amount of SiC powder to be analyzed is mixed with KBr powder, which is transparent to infrared rays, and the mixture is formed into a disk shape and used as a measurement sample.
この測定試料のＦＴ−ＩＲの測定例を第１図に示す。図
で横軸は波数（ｃＩｌｌ−−１）、縦軸は吸光度（２吸
光度）である。各曲線は測定試料中のＳｉＣ（ｆ−ｃ一
定）の量を変えたときの吸光度曲線の変化を示し、ビー
ク１はＳｉＣによる吸収を示し、波数約３０００〜１５
００間の直線部分２はベースラインでθはその傾き角度
である。上の曲線程ＳｉＣの量が多い０図かられかるよ
うにＳｉＣの量が多くなるに従ってθは大きくなってい
る。又、試料中のｆ−ｃの量を一定にしてＳｉＣの量を
変えてもθは変らず、ベースラインが変るだけであるの
でθはｆ−ｃ量に依存することがわかる。An example of FT-IR measurement of this measurement sample is shown in FIG. In the figure, the horizontal axis is the wave number (cIll--1), and the vertical axis is the absorbance (2 absorbance). Each curve shows the change in the absorbance curve when the amount of SiC (constant f-c) in the measurement sample is changed, and peak 1 shows absorption by SiC, with a wave number of about 3000 to 15.
The straight line portion 2 between 00 and 00 is the baseline, and θ is its inclination angle. As can be seen from Figure 0, where the upper curve shows a larger amount of SiC, θ increases as the amount of SiC increases. Further, even if the amount of SiC is changed while keeping the amount of f-c in the sample constant, θ does not change, but only the baseline changes, so it can be seen that θ depends on the amount of f-c.
今、実験を容易にするため、 ｆ−ｃ一定のＳｉＣを
用い、そのｆｆｉ：（Ｗ）を変えることによってｆ−ｃ
ヲ変化させ、Ｗとθの関係を調べてみると第２図のよう
に直線関係になることがわかった。従ってこの関係を利
用し、予じめｆ−ｃ既知のＳｉＣについてθとＳｉＣの
闇との直線関係を調べておき、その勾配と ｆ−ｃ未知
のＳｉＣについて求めた勾配とを比較することにより、
ＳｉＣ中のｆ−ｃ含有量が求まる。Now, in order to facilitate the experiment, we use SiC with constant f-c, and by changing its ffi: (W), we can obtain f-c
When we varied wo and investigated the relationship between W and θ, we found that it was a linear relationship as shown in Figure 2. Therefore, by using this relationship, we first investigate the linear relationship between θ and the darkness of SiC for SiC with known f-c, and then compare its slope with the slope determined for SiC with unknown f-c. ,
The fc content in SiC is determined.
第２図においてＳｉＣ量とθの直線が３のように原点を
通らないのはＳｉＣの粒径が大きい場合であり、これは
光散乱の影響を受けるためと考えられる。実験によると
ＳｉＣの粒径が１ｇｍ以下であれば４のように直線はほ
ぼ原点を通る。直線が原点を通らない場合でも直線の勾
配は殆んど変らないので定量に支障はないが、原点を通
れば一点の測定で勾配が求まるので操作が容易である。In FIG. 2, the straight line between the amount of SiC and θ does not pass through the origin as shown in 3 when the particle size of SiC is large, and this is thought to be due to the influence of light scattering. According to experiments, if the particle size of SiC is 1 gm or less, a straight line as shown in 4 almost passes through the origin. Even if the straight line does not pass through the origin, the slope of the straight line will hardly change, so there is no problem in quantitative determination, but if it passes through the origin, the slope can be determined by measuring one point, making the operation easier.
従ってＳｉＣの粉末は１鉢−以下が望ましい、 Ｓｉ
Ｃの粒度度は数ル鵬以下が望、ましい。Therefore, it is desirable that the amount of SiC powder is less than one pot.
The particle size of C is desirably less than a few microns.
上記したようにベースラインの傾きは試料中の遊ｇ１炭
素に依存するが、これはさらに炭素の形態、例えば黒鉛
かあるいは非晶質炭素によっても変るので、基準値とし
て比較すべきＳｉＣは同じ製法によるものを選ぶ必要が
ある０例えばアチソン法、気相法（Ｓｉ含有有機化合物
の熱分解）、金属Ｓｉの炭化性等製法毎に基準値を設け
ておき、これと同−製法内において基準値と測定しよう
とする試料とを比較する
次に本発明の操作手順を具体的に説明する。As mentioned above, the slope of the baseline depends on the free g1 carbon in the sample, but this also changes depending on the form of carbon, such as graphite or amorphous carbon. For example, a standard value is established for each manufacturing method, such as the Acheson method, the gas phase method (thermal decomposition of Si-containing organic compounds), and the carbonization of metal Si, and the standard value within the same manufacturing method is set. Next, the operating procedure of the present invention will be specifically explained.
ｆ−ｃ既知（Ｇｏ重量％とする。）のＳｉＣ微粉を０．
１〜５ｍｇの範囲で精科し１例えばめのう乳鉢中でＫＢ
ｒ約７００ｍｇとよく混合し、プレスしてディスクとし
たものを ｆ−ｃ測定用標準試料とする。別にＫＢｒの
みのディスクを作成し、これを対照試料として横軸に波
数４０００ｃｍ−” 〜５００ｃ＋ｒ’の範囲で波数（
ｃｍ″ｌ）をとり、縦軸を吸光度として標準試料の赤外
吸収スペクトルを測定する。対照試料は空気でもよいが
ＫＢｒを用いた方がバックグラウンドが相殺され、精度
が向上する。またＫＢｒ以外でも赤外線に透明なもので
あれば他のものも使用できる。SiC fine powder with f-c known (Go weight %) was added to 0.
Extract 1 to 5 mg of KB in an agate mortar, for example.
Mix well with about 700 mg of r and press to form a disc, which is used as a standard sample for f-c measurement. Separately, a disk containing only KBr was prepared, and this was used as a control sample, and the wave number (
cm''l) and measure the infrared absorption spectrum of the standard sample with absorbance as the vertical axis. Air may be used as the control sample, but using KBr cancels out the background and improves accuracy. However, other materials can also be used as long as they are transparent to infrared rays.
測定は前記した試料の量Ｗ（従って炭素量）とベースラ
インの傾き角度４４１ｔθの関係を求めるものであるか
ら、直線が原点を通ることが明らかである場合は一点の
測定でも可能であるが、最も望ましくは何点かについて
行なう。そしてこのデータから計算によって回帰直線を
求める。その直線の勾配をＡｎとする。 Ａｏは単位Ｓ
ｉＣ重量当りのベースラインの傾きに相当する。このＡ
ｏをＳｉＣ中の炭素濃度Ｇｏで除したＡｏ／Ｃｏを基準
値とする。The measurement is to find the relationship between the amount W of the sample (therefore, the amount of carbon) and the baseline inclination angle 441tθ, so if it is clear that the straight line passes through the origin, it is possible to measure at one point. Most preferably, this is done for several points. A regression line is then calculated from this data. Let the slope of the straight line be An. Ao is unit S
Corresponds to the slope of the baseline per iC weight. This A
The reference value is Ao/Co, which is obtained by dividing o by the carbon concentration Go in SiC.
次に ｆ−ｃを測定しようとするＳｉＣ（ｆ−ｃの量を
Ｃｘ重量％とする）について、上記と同様にＡｏに対応
するＡ冨を求める０以上により
からＣ１が定量できる。Next, for SiC whose f-c is to be measured (the amount of f-c is Cx weight %), C1 can be quantified from 0 or more to obtain the A-value corresponding to Ao in the same manner as above.
Ｃｘが定量できれば、ＳｉＣ中の総炭素量はＪＩＳ法で
ほぼ正確に定量できるから、これらよりＳｉと結合して
いるＣが定量でき、従って本発明方法により Ｓｉｃの
総量も計算できる。If Cx can be quantified, the total amount of carbon in SiC can be almost accurately quantified using the JIS method, and from this, the amount of C bonded to Si can be quantified, and therefore the total amount of Sic can also be calculated using the method of the present invention.
（ｅ）実施例
（１）標準試料の分析
アチソン法で製造した次のＳｉＣ微粉を標準試料として
用いた。定量はＪＩＳの化学分析による。(e) Example (1) Analysis of standard sample The following SiC fine powder produced by the Acheson method was used as a standard sample. Quantification is based on JIS chemical analysis.
平均粒径 １．７ ル諺
ｆ−ｃ Ｏ，３３％（重量％以下間）遊離Ｓ
ｉ０ ０．０４％
ＳｉＣ９８，７１％
全Ｆｅ Ｏ，０３％
このＳｉＣ粉末を表１に示す量精秤し、夫々ＫＢｒ粉末
約７００ｍｇとよく混合し、ディスクに成形し、ＦＴ−
ＩＲ（バイオラッド社製ＦＴＳ１５Ｅ型）により、横軸
に波数（ａｍ−１）、縦軸に吸光度（％吸光度）をとり
、波数４０００ｃｍ″’ 〜５００ｃ＋ｓ−’における
吸光度曲線を求めた。その結果ベースラインの傾き角度
θを表１に示す。Average particle size 1.7% free S
i0 0.04% SiC 98.71% Total Fe O. 03% This SiC powder was accurately weighed in the amount shown in Table 1, mixed well with about 700 mg of KBr powder, molded into a disk, and FT-
Using IR (Model FTS15E manufactured by Bio-Rad), the horizontal axis represents the wave number (am-1) and the vertical axis represents the absorbance (% absorbance), and an absorbance curve at a wave number of 4000 cm'' to 500 c+s-' was determined.Based on the results. Table 1 shows the inclination angle θ of the line.
表 １
これを直線で表すと
θ＝ ２５Ｗ ＋ １８、 相関係数＝ ０．９９８従
って基準値はＡｏ＝２５として、
２５１０．３３（＄） ＝７８（％吸光度／ｇ−駕）（
２）未知試料の分析
■同じアチソン法でつくった未知試料について同様に吸
光度曲線を求め、その結果Ｗとθの関係を表２に示す、
（平均粒径は５．７ ｐ、ｒａ ） 。Table 1 If this is expressed as a straight line, θ = 25W + 18, correlation coefficient = 0.998. Therefore, the reference value is Ao = 25, 2510.33 ($) = 78 (% absorbance / g-g) (
2) Analysis of unknown sample ■Absorbance curve was determined in the same way for an unknown sample prepared by the same Acheson method, and the resulting relationship between W and θ is shown in Table 2.
(Average particle size is 5.7 p, ra).
表 ２
これより θ＝ １９Ｗ ＋ ＩＢ、 相関係数＝
０．９７となる。従って未知試料中のｆ−ｃ量は、１９
／７Ｂ＝ ０．２５％である。Table 2 From this, θ = 19W + IB, correlation coefficient =
It becomes 0.97. Therefore, the amount of f-c in the unknown sample is 19
/7B=0.25%.
この試料の化学分析によるｆ−ｃは０．２３％であった
。この試料は平均粒径が比較的大きいのでＪＩＳ分析で
も正しい値がでているものと思われる。Chemical analysis of this sample showed f-c to be 0.23%. Since this sample has a relatively large average particle size, it seems that the JIS analysis also gave correct values.
■上記未知試料を粉砕し、平均粒径０．４４ ｐ、 ｍ
として測定した。結果を表３に示す。■Crush the unknown sample above to obtain an average particle size of 0.44 p, m.
It was measured as The results are shown in Table 3.
表 ３
これより θ＝１７Ｗ＋２ 相関係数＝０．９８従っ
て ｆ−ｃ量 １７／ ７［１＝ Ｏ，’ｔ１％この粉
砕試料についてＪＩＳ法で測定すると１．８３％となっ
た。本発明によれば試料の粒度に関係なくほぼ正しい値
が得られるが、ＪＩＳ法では粒度が細かくなるとＳｉＣ
の一部がｆ−ｃの測定のための燃焼条件下で酸化するた
め、ｆ−ｃが高くなっている。Table 3 From this, θ=17W+2 Correlation coefficient=0.98 Therefore, f-c amount 17/7[1=O,'t1% When this pulverized sample was measured by JIS method, it was 1.83%. According to the present invention, almost correct values can be obtained regardless of the particle size of the sample, but in the JIS method, when the particle size becomes fine, SiC
f-c is high because a part of it is oxidized under the combustion conditions for f-c measurement.
（ｆ）効果
本発明によれば超微粉のＳｉＣでも精度よく遊離炭素を
定量分析することができる。しかもＦＴ−ＩＲを使用す
ればデータ処理は容易であり、短時間で結果が得られる
。(f) Effect According to the present invention, free carbon can be quantitatively analyzed with high precision even in the case of ultrafine SiC powder. Moreover, if FT-IR is used, data processing is easy and results can be obtained in a short time.
第１図は赤外分光光度計による波数吸光度曲線であり、
第２図は試料中のＳｉＣ量と前記曲線のベースラインの
傾き角度との関係を示すグラフである。
２・・・・・・ベースライン、
θ・・・・・・ベースラインの傾き角度。Figure 1 is a wave number absorbance curve measured by an infrared spectrophotometer.
FIG. 2 is a graph showing the relationship between the amount of SiC in the sample and the slope angle of the baseline of the curve. 2...Baseline, θ...Inclination angle of the baseline.
Claims (1)
化珪素中の遊離炭素定量法 （イ）赤外線透過法により炭化珪素粉末含有試料の波数
吸光度曲線を求め、波数（ｃｍ＾−＾１）４０００〜５
００におけるベースラインの直線部分の傾き角度をθ（
％吸光度／ｃｍ＾−１）とする。 （ロ）試料中の遊離炭素既知（Ｃｏ％）のＳｉＣについ
て、そのＳｉＣ量Ｗに対する前記傾き角度θを測定し、
θとＷの直線よりその勾配Ａｏを求め、これよりＡｏ／
Ｃｏを算出し、これを基準値とする。 （ハ）遊離炭素未知（Ｃｘ％）のＳｉＣについて、（ロ
）と同様にＡｏに対応するＡｘを求める。 （ニ）Ｃｘ＝Ａｘ／（Ａｏ／Ｃｏ）よりＣｘを算出する
。[Claims] A method for determining free carbon in silicon carbide comprising the following operations (a), (b), (c), and (d) (a) Wavenumber absorbance of a sample containing silicon carbide powder by infrared transmission method Find the curve, wave number (cm^-^1) 4000~5
The inclination angle of the straight line part of the baseline at 00 is θ(
% absorbance/cm^-1). (b) For SiC with known free carbon (Co%) in the sample, measure the tilt angle θ with respect to the SiC amount W,
Find the slope Ao from the straight line between θ and W, and from this Ao/
Calculate Co and use this as a reference value. (c) For SiC with unknown free carbon (Cx%), find Ax corresponding to Ao in the same way as in (b). (d) Calculate Cx from Cx=Ax/(Ao/Co).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60044727A JPS61204544A (en) | 1985-03-08 | 1985-03-08 | Quantitative determination method for free carbon in silicon carbide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60044727A JPS61204544A (en) | 1985-03-08 | 1985-03-08 | Quantitative determination method for free carbon in silicon carbide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61204544A true JPS61204544A (en) | 1986-09-10 |
Family
ID=12699472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60044727A Pending JPS61204544A (en) | 1985-03-08 | 1985-03-08 | Quantitative determination method for free carbon in silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61204544A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039607A (en) * | 2006-08-07 | 2008-02-21 | Horiba Ltd | Quantitative analyzing method, quantitative analyzer and program |
| WO2012117601A1 (en) * | 2011-03-01 | 2012-09-07 | 大日本スクリーン製造株式会社 | Carbon-content-percentage acquisition device and carbon-content-percentage acquisition method |
| CN104359907A (en) * | 2014-11-17 | 2015-02-18 | 山西新华化工有限责任公司 | Evaluation method of oxygen-containing functional group on surface of active carbon |
| JP2021004856A (en) * | 2019-06-27 | 2021-01-14 | 三菱重工業株式会社 | Spectroscopic analysis device and spectroscopic analysis method |
-
1985
- 1985-03-08 JP JP60044727A patent/JPS61204544A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039607A (en) * | 2006-08-07 | 2008-02-21 | Horiba Ltd | Quantitative analyzing method, quantitative analyzer and program |
| JP4733589B2 (en) * | 2006-08-07 | 2011-07-27 | 株式会社堀場製作所 | Quantitative analysis method, quantitative analysis apparatus and program |
| WO2012117601A1 (en) * | 2011-03-01 | 2012-09-07 | 大日本スクリーン製造株式会社 | Carbon-content-percentage acquisition device and carbon-content-percentage acquisition method |
| JPWO2012117601A1 (en) * | 2011-03-01 | 2014-07-07 | 大日本スクリーン製造株式会社 | Carbon content acquisition apparatus and carbon content acquisition method |
| CN104359907A (en) * | 2014-11-17 | 2015-02-18 | 山西新华化工有限责任公司 | Evaluation method of oxygen-containing functional group on surface of active carbon |
| JP2021004856A (en) * | 2019-06-27 | 2021-01-14 | 三菱重工業株式会社 | Spectroscopic analysis device and spectroscopic analysis method |
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