JPS61203547A - 半導体本体を具える装置及び半導体装置 - Google Patents

半導体本体を具える装置及び半導体装置

Info

Publication number: JPS61203547A
Authority: JP; Japan
Prior art keywords: cathode; semiconductor body; electron; semiconductor; main surface
Prior art date: 1985-03-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP61044309A

Other languages

English (en)

Japanese (ja)

Inventor

ヤン・ツイエル

ヨハネス・ヘルマヌス・アントニウス・フアステリンク

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-03-04

Filing date

1986-03-03

Publication date

1986-09-09

1986-03-03 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1986-09-09 Publication of JPS61203547A publication Critical patent/JPS61203547A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims description 85
238000010894 electron beam technology Methods 0.000 claims description 6
230000001681 protective effect Effects 0.000 claims description 4
239000002184 metal Substances 0.000 claims 1
239000010410 layer Substances 0.000 description 15
230000015556 catabolic process Effects 0.000 description 9
238000001465 metallisation Methods 0.000 description 8
229910052792 caesium Inorganic materials 0.000 description 6
TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 6
239000007789 gas Substances 0.000 description 6
125000004430 oxygen atom Chemical group O* 0.000 description 5
230000002441 reversible effect Effects 0.000 description 5
150000002500 ions Chemical class 0.000 description 4
CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical class O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
238000009434 installation Methods 0.000 description 3
239000000758 substrate Substances 0.000 description 3
125000004429 atom Chemical group 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
229910052788 barium Inorganic materials 0.000 description 2
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
230000008901 benefit Effects 0.000 description 2
239000010406 cathode material Substances 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
230000006872 improvement Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
RXCVUXLCNLVYIA-UHFFFAOYSA-N orthocarbonic acid Chemical class OC(O)(O)O RXCVUXLCNLVYIA-UHFFFAOYSA-N 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
230000009467 reduction Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
239000002344 surface layer Substances 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
238000004390 Auger electron microscopy Methods 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910002092 carbon dioxide Inorganic materials 0.000 description 1
239000001569 carbon dioxide Substances 0.000 description 1
150000001768 cations Chemical class 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000010586 diagram Methods 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000005040 ion trap Methods 0.000 description 1
238000000034 method Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
230000000149 penetrating effect Effects 0.000 description 1
230000008569 process Effects 0.000 description 1
238000011084 recovery Methods 0.000 description 1
238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
229910052712 strontium Inorganic materials 0.000 description 1
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
230000002123 temporal effect Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

Cold Cathode And The Manufacture (AREA)

JP61044309A 1985-03-04 1986-03-03 半導体本体を具える装置及び半導体装置 Pending JPS61203547A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8500596A NL8500596A (nl)	1985-03-04	1985-03-04	Inrichting voorzien van een halfgeleiderkathode.
NL8500596		1985-03-04

Publications (1)

Publication Number	Publication Date
JPS61203547A true JPS61203547A (ja)	1986-09-09

Family

ID=19845615

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP61044309A Pending JPS61203547A (ja)	1985-03-04	1986-03-03	半導体本体を具える装置及び半導体装置

Country Status (8)

Country	Link
US (1)	US4717855A (fr)
JP (1)	JPS61203547A (fr)
DE (1)	DE3606489A1 (fr)
FR (1)	FR2578356B1 (fr)
GB (1)	GB2172741B (fr)
IT (1)	IT1190061B (fr)
NL (1)	NL8500596A (fr)
SG (1)	SG88390G (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5185559A (en) *	1986-05-20	1993-02-09	Canon Kabushiki Kaisha	Supply circuit for P-N junction cathode
NL8602330A (nl) *	1986-09-15	1988-04-05	Philips Nv	Werkwijze voor het contacteren van halfgeleiderkathoden, alsmede voor het vervaardigen van een electronenbuis voorzien van een dergelijke kathode.
NL8700487A (nl) *	1987-02-27	1988-09-16	Philips Nv	Vacuuembuis met elektronenoptiek.
NL8901075A (nl) *	1989-04-28	1990-11-16	Philips Nv	Inrichting ten behoeve van elektronengeneratie en weergeefinrichting.
US5359257A (en) *	1990-12-03	1994-10-25	Bunch Kyle J	Ballistic electron, solid state cathode
US5686789A (en) *	1995-03-14	1997-11-11	Osram Sylvania Inc.	Discharge device having cathode with micro hollow array
JP3372848B2 (ja) *	1996-10-31	2003-02-04	キヤノン株式会社	電子放出素子及び画像表示装置及びそれらの製造方法
JP2000228352A (ja) *	1999-02-09	2000-08-15	Nikon Corp	電子銃及びそれを備える電子線転写装置
ITRM20040464A1 (it) *	2004-09-29	2004-12-29	Uni Degli Studi Di Roma Tor Vergata	Dispositivo per la pulizia di punte di un microscopio a scansione tunnel (stm), microscopio a scansione tunnel e relativo procedimento di pulizia.
EP1739705A2 (fr) *	2005-06-30	2007-01-03	ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh	Nettoyage continu de la surface émittrice d'une source d'émission d'un champ froid à l'aide d'UC ou de rayons laser
EP1746629A1 (fr) *	2005-07-22	2007-01-24	ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh	agencement d' émetteurs de champ et procédé de nettoyage d' une surface émettant d' un émetteur de champs

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL6903628A (fr) *	1968-03-15	1969-09-17
FR2098954A5 (fr) *	1970-07-31	1972-03-10	Anvar
GB1438502A (en) *	1972-06-05	1976-06-09	Vacuum Generators Ltd	Field emission electron sources
US4160188A (en) *	1976-04-23	1979-07-03	The United States Of America As Represented By The Secretary Of The Navy	Electron beam tube
NL8104893A (nl) *	1981-10-29	1983-05-16	Philips Nv	Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
NL8200875A (nl) *	1982-03-04	1983-10-03	Philips Nv	Inrichting voor het opnemen of weergeven van beelden en halfgeleiderinrichting voor toepassing in een dergelijke inrichting.

1985
- 1985-03-04 NL NL8500596A patent/NL8500596A/nl not_active Application Discontinuation
1986
- 1986-02-26 US US06/832,952 patent/US4717855A/en not_active Expired - Fee Related
- 1986-02-28 GB GB8605021A patent/GB2172741B/en not_active Expired
- 1986-02-28 FR FR8602824A patent/FR2578356B1/fr not_active Expired
- 1986-02-28 IT IT19575/86A patent/IT1190061B/it active
- 1986-02-28 DE DE19863606489 patent/DE3606489A1/de not_active Withdrawn
- 1986-03-03 JP JP61044309A patent/JPS61203547A/ja active Pending
1990
- 1990-10-25 SG SG883/90A patent/SG88390G/en unknown

Also Published As

Publication number	Publication date
SG88390G (en)	1990-12-21
US4717855A (en)	1988-01-05
FR2578356A1 (fr)	1986-09-05
NL8500596A (nl)	1986-10-01
GB2172741A (en)	1986-09-24
DE3606489A1 (de)	1986-09-04
IT8619575A0 (it)	1986-02-28
FR2578356B1 (fr)	1987-06-05
GB2172741B (en)	1989-09-06
GB8605021D0 (en)	1986-04-09
IT8619575A1 (it)	1987-08-28
IT1190061B (it)	1988-02-10

Publication	Publication Date	Title
US4574216A (en)	1986-03-04	Cathode-ray tube and semiconductor device for use in such a cathode-ray tube
US5315207A (en)	1994-05-24	Device for generating electrons, and display device
JPS6146931B2 (fr)	1986-10-16
JPH0145694B2 (fr)	1989-10-04
JPS61203547A (ja)	1986-09-09	半導体本体を具える装置及び半導体装置
US4506284A (en)	1985-03-19	Electron sources and equipment having electron sources
JPH0512988A (ja)	1993-01-22	半導体電子放出素子
US4743794A (en)	1988-05-10	Cathode-ray tube having an ion trap
US4890031A (en)	1989-12-26	Semiconductor cathode with increased stability
US4749904A (en)	1988-06-07	Cathode ray tube with an ion trap including a barrier member
US7005795B2 (en)	2006-02-28	Electron bombardment of wide bandgap semiconductors for generating high brightness and narrow energy spread emission electrons
US4853754A (en)	1989-08-01	Semiconductor device having cold cathode
KR100237273B1 (ko)	2000-01-15	전계 방사형 냉음극
JP3154065B2 (ja)	2001-04-09	電子放出素子、及びこれを用いた電子放出装置、表示装置、電子線描画装置
JP2002313214A (ja)	2002-10-25	電子放出装置及び陰極線管
EP0795193B1 (fr)	2000-06-21	Dispositif optique a electrons presentant des zones emettrices allongees
JPS60175352A (ja)	1985-09-09	複数電子ビ−ム銃
JP3601275B2 (ja)	2004-12-15	電界電子放出素子
JPH06231674A (ja)	1994-08-19	電子放出素子及び画像形成装置
JPH0536369A (ja)	1993-02-12	電子ビーム装置及びその駆動方法
JPH0567428A (ja)	1993-03-19	電子放出素子