JPS61189625A - Formation of deposited film - Google Patents

Formation of deposited film

Info

Publication number
JPS61189625A
JPS61189625A JP2980685A JP2980685A JPS61189625A JP S61189625 A JPS61189625 A JP S61189625A JP 2980685 A JP2980685 A JP 2980685A JP 2980685 A JP2980685 A JP 2980685A JP S61189625 A JPS61189625 A JP S61189625A
Authority
JP
Japan
Prior art keywords
film
activation
deposited film
active species
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2980685A
Other languages
Japanese (ja)
Inventor
Shunichi Ishihara
俊一 石原
Shigeru Ono
茂 大野
Masahiro Kanai
正博 金井
Toshimichi Oda
小田　俊理
Isamu Shimizu
勇 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2980685A priority Critical patent/JPS61189625A/en
Publication of JPS61189625A publication Critical patent/JPS61189625A/en
Priority to US06/943,071 priority patent/US4728528A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To contrive the improvement in characteristics, film-forming speed, and reproducibility of the amorphous or crystalline deposited film containing carbon and the uniformity of film quality, by a method wherein a specific activa tion seed previously activated in a space different from the film-forming space is made to carry out chemical reaction. CONSTITUTION:In the film-forming space to form a deposited film 10 with an intermediate layer 12 and a photosensitive layer 13 over a substrate 11, an activation seed produced by decomposing a compound containing carbon and halogen and an activation seed produced out of a film-forming chemical substance which chemically interacts with it are separately introduced, and the deposited film 10 is formed over the substrate 11 by making these activation seeds to carry out chemical reaction by irradiation with photo energy. The deposited film 10 formed in such as manner does not receive adverse effects caused by etching action or another action such as abnormal discharge.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は炭素を含有する非晶質乃至は結晶質の堆積膜を
形成するのに好適な方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method suitable for forming an amorphous or crystalline deposited film containing carbon.

〔従来技術〕[Prior art]

例えば、アモルファスシリコン膜の形成には、真空蒸着
法、プラズマＣＶＤ法、ＣＶＤ法、反応性スパッタリン
グ法、イオンブレーティング法、光ＣＶＤ法などが試み
られており、一般的には、プラズマＣＶＤ法が広く用い
られ、企業化されている。For example, attempts have been made to form an amorphous silicon film using vacuum evaporation, plasma CVD, CVD, reactive sputtering, ion blasting, photo-CVD, etc. Generally, plasma CVD is the most popular method. Widely used and commercialized.

面乍らアモルファスシリコンで構成される堆積膜は電気
的、光学的特性及び、繰返し使用での疲労特性あるいは
使用環境特性、更には均一性、再現性を含めた生産性、
量産性の点において、更に総合的な特性の向上を図る余
地がある。Deposited films made of amorphous silicon have excellent electrical and optical properties, fatigue properties during repeated use, use environment properties, and productivity including uniformity and reproducibility.
In terms of mass production, there is room to further improve the overall characteristics.

従来から一般化されているプラズマＣＶＤ法によるアモ
ルファスシリコン堆積膜の形成に於ての反応プロセスは
、従来のＣＶＤ法に比較してかなり複雑であり、その反
応機構も不明な点が少なくなかった。又、その堆積膜の
形成パラメーターも多く、（例えば、基体温度、導入ガ
スの流量と比、形成時の圧力、高周波電力、電極構造、
反応容器の構造、排気速度、プラズマ発生方式など）こ
れら多くのパラメータの組合せによるため、時にはプラ
ズマが不安定な状態になり、形成された堆積膜に著しい
悪影響を与えることが少なくなかった。そのうえ、装置
特イ〕のパラメータを装置ごとに選定しなければならず
、したがって製造条件を一般化することがむずかしいの
が実状であった。一方、アモルファスシリコン膜として
電気的、光学的、光導電的乃至は機械的特性の夫々を十
分に満足させ得るものを発現させるためには、現状では
プラズマＣＶＤ法によって形成することが最良とされて
いる。The reaction process in forming an amorphous silicon deposited film by the conventionally popular plasma CVD method is considerably more complicated than that of the conventional CVD method, and there are many aspects of the reaction mechanism that are unclear. In addition, there are many formation parameters for the deposited film (for example, substrate temperature, flow rate and ratio of introduced gas, pressure during formation, high frequency power, electrode structure,
Due to the combination of these many parameters (reaction vessel structure, pumping speed, plasma generation method, etc.), the plasma sometimes becomes unstable, often having a significant adverse effect on the deposited film formed. Moreover, it is necessary to select device specific parameters for each device, making it difficult to generalize the manufacturing conditions. On the other hand, in order to develop an amorphous silicon film that fully satisfies each of the electrical, optical, photoconductive, and mechanical properties, it is currently considered best to form it by plasma CVD. There is.

面乍ら、堆積膜の応用用途によっては、大面積化、膜厚
均一化、膜品質の均一性を十分満足させ、しかも高速成
膜によって再現性のある量産化を図ねばならないため、
プラズマＣＶＤ法によるアモルファスシリコン堆積膜の
形成においては、量産装置に多大な設備投資が必要とな
って、またその量産の為の管理項目も複雑になり、、管
理許容幅も狭くなり、装置の調整も微妙であることから
、これらのことが、今後改善すべき問題点として指摘さ
れている。他方、通常のＣＶＤ法による従来の技術では
、高温を必要とし、実用可能な特性を有する堆積膜が得
られていなかった。However, depending on the application of the deposited film, it is necessary to fully satisfy the requirements of large area, uniform film thickness, and uniform film quality, and to achieve mass production with high reproducibility through high-speed film formation.
Forming an amorphous silicon deposited film using the plasma CVD method requires a large amount of equipment investment for mass production equipment, and the management items for mass production are also complex, and the tolerance range for management is narrow, making it difficult to adjust the equipment. However, these issues have been pointed out as issues that should be improved in the future. On the other hand, the conventional technique using the normal CVD method requires high temperatures and has not been able to provide a deposited film with practically usable characteristics.

上述の如く、アモルファスシリコン膜の形成に於て、そ
の実用可能な特性、均一性を維持させながら、低コスト
な装置で量産化できる形成方法を開発することが切望さ
れている。これ等のことは、他の機能性膜、例えば窒化
シリコン膜、炭化シリコン膜、酸化シリコン膜に於ても
同様なことがいえる。As mentioned above, it is strongly desired to develop a method for forming an amorphous silicon film that can be mass-produced using low-cost equipment while maintaining its practically usable characteristics and uniformity. The same can be said of other functional films, such as silicon nitride films, silicon carbide films, and silicon oxide films.

本発明は、上述したプラズマＣＶＤ法の欠点を除去する
と共に、従来の形成方法によらない新規な堆積膜形成法
を提供するものである。The present invention eliminates the above-mentioned drawbacks of the plasma CVD method and provides a new deposited film forming method that does not rely on conventional forming methods.

〔発明の目的及び概要〕[Purpose and outline of the invention]

本発明の目的は、形成される膜の諸特性、成膜速度、再
現性の向上及び膜品質の均一化を図りながら、　ＩＩＩ
の大面積化に適し、Ｈの生産性の向上及び量産化を容易
に達成することのできる堆積膜形成法を提供することに
ある。The purpose of the present invention is to improve the characteristics, film formation speed, and reproducibility of the film to be formed, and to make the film quality uniform.
It is an object of the present invention to provide a method for forming a deposited film that is suitable for increasing the area of H and can easily achieve improved productivity and mass production of H.

上記目的は、基体上に堆積膜を形成する為の成膜空間内
に、炭素とハロゲンを含む化合物を分解することにより
生成される活性種（Ａ）と、該活性種（Ａ）と化学的相
互作用をする。The above purpose is to create an active species (A) generated by decomposing a compound containing carbon and halogen in a film forming space for forming a deposited film on a substrate, and to create a chemical reaction between the active species (A) and the active species (A). interact.

成膜用の化学物質より生成される活性種（Ｂ）とを夫々
別々に導入し、これらに光エネルギーを照射して化学反
応させる事によって、前記基体上に堆積膜を形成する喜
を特徴とする本発明の堆積膜形成法によって達成される
。A deposited film is formed on the substrate by separately introducing active species (B) generated from chemical substances for film formation and irradiating them with light energy to cause a chemical reaction. This is achieved by the deposited film forming method of the present invention.

〔実施態様〕[Embodiment]

本発明方法では、堆積膜を形成する為の成膜空間におい
てプラズマを生起させる代りに５炭素とハロゲンを含む
化合物を分解することにより生成される活性種（Ａ）と
炭素含有化合物より生成される活性種（Ｂ）との共存下
に於いて、これ等に光エネルギーを作用させることによ
り、これ等による化学的相互作用を生起させ、或いは促
進、増幅させるため、形成される堆積膜は、エツチング
作用、或いはその他の例えば異常放電作用などによる悪
影響を受けることはない。In the method of the present invention, instead of generating plasma in the film forming space for forming a deposited film, active species (A) generated by decomposing a compound containing five carbons and a halogen and a carbon-containing compound are used. In coexistence with active species (B), by applying light energy to these, chemical interactions are caused, promoted, and amplified, so the deposited film that is formed is etched. effects or other adverse effects such as abnormal discharge effects.

又１本発明によれば、成１１り空間の雰囲気温度、基体
温度を所望に従って任意に制御することにより、より安
定したＣＶＤ法とすることができる。Furthermore, according to the present invention, a more stable CVD method can be achieved by arbitrarily controlling the ambient temperature of the growth space and the substrate temperature as desired.

更に、励起エネルギーは成Ｓ用の基体近傍に到達した各
活性種に一様にあるいは選択的制御的に付与されるが、
光エネルギーを使用すれば、適宜の光学系を用いて基体
の全体に照射して堆積膜を形成することができるし、あ
るいは所望部分のみに選択的制御的に照射して部分的に
堆積膜を形成することができ、またレジスト等を使用し
て所定の図形部分のみに照射し堆積膜を形成できるなど
の便利さを有しているため、有利に用いられる。Furthermore, excitation energy is applied uniformly or selectively to each active species that reaches the vicinity of the substrate for S formation;
Using light energy, it is possible to irradiate the entire substrate using an appropriate optical system to form a deposited film, or to selectively control and irradiate only desired areas to form a deposited film. It is advantageously used because it has the convenience of being able to form a deposited film by irradiating only a predetermined graphical portion using a resist or the like.

本発明の方法が従来のＣＶＤ法と違う点の１つは、あら
かじめ成膜空間とは異なる空間（以下、活性化空間とい
う）に於いて活性化された活性種を使う事である。この
ことにより、従来のＣＶＤ法より成膜速度を飛躍的に伸
ばすことができ、加えて堆積膜形成の際の基体温度も一
層の低温化を図ることが可能になり、膜品質の安定した
堆積膜を工業的に大量に、しかも低コストで提供できる
。One of the differences between the method of the present invention and the conventional CVD method is that it uses active species activated in advance in a space different from the film-forming space (hereinafter referred to as activation space). This makes it possible to dramatically increase the film formation rate compared to the conventional CVD method, and also to further reduce the substrate temperature during deposition film formation, making it possible to deposit films with stable film quality. Membranes can be provided industrially in large quantities at low cost.

本発明では、成膜空間に導入される活性化空間（Ａ）か
らの活性種（Ａ）は、生産性及び取扱い易さなどの点か
ら、その寿命が０．１秒以上、より好ましくは１秒以上
、最適には１０秒以上あるものが、所望に従って選択さ
れて使用され、この活性種（Ａ）の構成要素が成膜空間
で形成させる堆積膜を構成する成分を構成するものとな
る。又、成膜用の化学物質は活性化空間（Ｂ）に於いて
、活性化エネルギーを作用されて活性化されて成膜空間
に導入され、光エネルギーの作用により励起されて、堆
積膜を形成する際、同時に活性化空間（Ａ）から導入さ
れ、形成される堆積膜の構成成分となる構成要素を含む
活性種（Ａ）と化学的に相互作用する。その結果、所望
の基体上に所望の堆積膜が容易に形成される。In the present invention, the activated species (A) from the activation space (A) introduced into the film forming space have a lifetime of 0.1 seconds or more, more preferably 1 second, from the viewpoint of productivity and ease of handling. A period of at least 10 seconds, preferably at least 10 seconds, is selected and used as desired, and the constituent elements of this active species (A) constitute the components constituting the deposited film formed in the film forming space. Further, in the activation space (B), the chemical substance for film formation is activated by activation energy and introduced into the film formation space, and is excited by the action of light energy to form a deposited film. At the same time, the activated species (A) are introduced from the activation space (A) and chemically interact with the active species (A) containing constituent elements that will become the constituents of the deposited film to be formed. As a result, a desired deposited film can be easily formed on a desired substrate.

本発明において、活性化空間（Ａ）に導入される炭素と
ハロゲンを含む化合物としては、例えば鎖状又は環状シ
ラン化合物の水素原子の一部乃至全部をハロゲン原子で
置換した化合物が用いられ、具体的には、例えば、Ｃｕ
Ｙ２ｕ＋２（ｕは１以上の整数、ＹはＦ、ＣＩ　、Ｂｒ
及びＩより選択される少なくとも一種の元素である。）
で示される鎖状ハロゲン化炭素、ＣＶＹ２Ｖ（Ｖは３以
上の整数、Ｙは前述の意味を有する。）で示される環状
ハロゲン化炭素、Ｓ　（ｕＨＸＹｙ　（ｕ及びＹは前述
の意味を有する。ｘ＋ｙ＝２ｕ又は２ｕ＋２である。）
で示される鎖状又は環状化合物などが挙げられる。In the present invention, as the compound containing carbon and halogen introduced into the activation space (A), for example, a compound in which part or all of the hydrogen atoms of a chain or cyclic silane compound is replaced with a halogen atom is used. For example, Cu
Y2u+2 (u is an integer greater than or equal to 1, Y is F, CI, Br
and at least one element selected from I. )
Chain halogenated carbon represented by CVY2V (V is an integer of 3 or more, Y has the above-mentioned meaning), S (uHXYy (u and Y have the above-mentioned meaning) = 2u or 2u+2.)
Examples include chain or cyclic compounds shown in the following.

具体的には例えばＣＦ４　、（ＣＦ２）ｓ　。Specifically, for example, CF4, (CF2)s.

（ＣＦ２）　６．（ＣＦ２）４　、Ｃ２Ｆ６　、Ｃ３Ｆ
８．ＣＨＦ３．ＣＨ２Ｆ２．ＣＣｌ４．（ＣＣ１２）５
．ＣＢｒ４．（ＣＢｒ２）５．Ｃ２Ｃ１６゜Ｃ２Ｃｌ３
Ｆ３などのガス状態の又は容易にガス化し得るものが挙
げられる。(CF2) 6. (CF2)4 , C2F6 , C3F
8. CHF3. CH2F2. CCl4. (CC12)5
．． CBr4. (CBr2)5. C2C16゜C2Cl3
Examples include those in a gaseous state or easily gasified, such as F3.

ヌ１本発明においては、前記炭素とハロゲンを含む化合
物を分解することにより生成する活性種に加えて、ケイ
素とハロゲンを含む化合物を分解することにより生成す
る活性種を併用することができる。このケイ素とハロゲ
ンを含む化合物としては１例えば鎖状又は環状シラン化
合物の水素原子の一部乃至全部をハロゲン原子で置換し
た化合物が用いられ、具体的には１例えば、Ｓ　ｉ　ｕ
Ｚ２ｕ＋２　（ｕは１以上の整数、ＺばＦ、Ｃ１，Ｂｒ
及び工より選択される少なくとも一種の元素である。）
で示される鎖状ハロゲン化ケイ素、５ｉｙＺ２ｖ（ｖは
３以上の整数、Ｚは前述の意味を有する。）で示される
環状ハロゲン化ケイ素、Ｓ　ｉ　ｕＨ）（Ｚｙ　（ｕ及
びＺは前述の意味を有する。Ｘ＋７＝２ｕ又は２ｕ＋２
である。）で示される鎖状又は環状化合物などが挙げら
れる。N1 In the present invention, in addition to the active species generated by decomposing the compound containing carbon and halogen, active species generated by decomposing the compound containing silicon and halogen can be used in combination. As the compound containing silicon and halogen, for example, a compound in which part or all of the hydrogen atoms of a chain or cyclic silane compound is replaced with a halogen atom is used. Specifically, for example, 1, for example, S i u
Z2u+2 (u is an integer greater than or equal to 1, Z is F, C1, Br
and at least one element selected from )
Chain silicon halide represented by 5iyZ2v (v is an integer of 3 or more, Z has the above-mentioned meaning) cyclic silicon halide, S i uH) (Zy (u and Z have the above-mentioned meaning) Has.X+7=2u or 2u+2
It is. ), and the like.

具体的には例えばＳｉＦ４．（ＳｉＦ２）５゜（ＳｉＦ
２）ｅ、（ＳｉＦ２）ａ、５ｉ２Ｆｓ。Specifically, for example, SiF4. (SiF2)5゜(SiF
2) e, (SiF2)a, 5i2Fs.

５ｉ３ＦＢ、ＳｉＨＦ３．ＳｉＨ２Ｆ２゜５ｉＣ１４，
（ＳｉＣ１２）５．ＳｉＢｒ４゜（ＳｉＢｒ２）５．５
ｉ２Ｃ１ｓ、５ｉ２Ｂｒ６，５ｉＨＣ１３，５ｆＨＢｒ
３．５ｉＨＩ３．５ｉ２ＣＩ３Ｆ３などのガス状態の又
は容易にガス化し得るものが挙げられる。5i3FB, SiHF3. SiH2F2゜5iC14,
(SiC12)5. SiBr4゜(SiBr2)5.5
i2C1s, 5i2Br6, 5iHC13, 5fHBr
Examples include those in a gaseous state or easily gasifiable, such as 3.5iHI3.5i2CI3F3.

活性種（Ａ）を生成させるためには、前記炭素とハロゲ
ンを含む化合物（及びケイ素とハロゲンを含む化合物）
に加えて、必要に応じてケイ素単体等他のケイ素化合物
、水素、ハロゲン化合物（例えばＦ２ガス、Ｃ見２ガス
、ガス化したＢｒ２．Ｉ２等）などを併用することがで
きる。In order to generate the active species (A), the compound containing carbon and halogen (and the compound containing silicon and halogen)
In addition, other silicon compounds such as simple silicon, hydrogen, halogen compounds (for example, F2 gas, C2 gas, gasified Br2.I2, etc.) can be used in combination as necessary.

本発明において、活性化空間（Ａ）及び（Ｂ）で活性種
（Ａ）及び（Ｂ）を夫々生成させる方法としては、各々
の条件、装置を考慮してマイクロ波、ＲＦ、低周波、Ｄ
Ｃ等の電気エネルギー、ヒータ加熱、赤外線加熱等によ
る熱エネルギー、光エネルギーなどの活性化エネルギー
が使用される。In the present invention, methods for generating activated species (A) and (B) in activation spaces (A) and (B), respectively, include microwave, RF, low frequency, D
Activation energy such as electrical energy such as C, thermal energy such as heater heating, infrared heating, and light energy is used.

ｈ述したものに、活性化空間（Ａ）で熱、光、電気など
の活性化エネルギーを加えることにより、活性種（Ａ）
が生成される。By adding activation energy such as heat, light, electricity, etc. to the above in the activation space (A), the activated species (A)
is generated.

本発明の方法で用いられる。活性化学１ＩＪｌ（Ｂ）に
於いて、活性種ＣＢ）を生成させる前記成膜川の化学物
質としては、水素ガス及び／ヌはハロゲン化合物（例え
ばＦ２ガス、Ｃ見２ガス。Used in the method of the invention. In the active chemistry 1IJl (B), the chemical substances used in the film formation process to generate the active species CB include hydrogen gas and halogen compounds (for example, F2 gas, C2 gas).

ガス化したＢｒ２　、Ｉ２等）が有利に用いられる。ま
た、これらの成膜用の化学物質に加えて１例えばヘリウ
ム、アルゴン、ネオン等の不活性ガスを用いることもで
きる。これらの成膜用の化学物質の複数を用いる場合に
は、予め混合して活性化空間（Ｂ）内にガス状態で導入
することもできるし、あるいはこれらの成膜用の化学物
質を夫々独立した供給源から各個別に供給し、活性化学
＋ｔＪ１（Ｂ）に導入することもできるし、又、夫々独
立の活性化空間に導入して、夫々個別に活性化すること
もできる。Gasified Br2, I2, etc.) are advantageously used. Moreover, in addition to these chemical substances for film formation, an inert gas such as helium, argon, neon, etc. can also be used. When using multiple of these film-forming chemicals, they can be mixed in advance and introduced into the activation space (B) in a gaseous state, or each of these film-forming chemicals can be used independently. They can be individually supplied from a supply source and introduced into the activation chemistry +tJ1 (B), or they can be introduced into independent activation spaces and activated individually.

本発明に於いて、成膜空間に導入される前記活性種（Ａ
）と前記活性種（Ｂ）との量の割合は、塩ｍ条件、活性
種の種類などで適宜所望に従って決められるが、好まし
くは１０：ｌ−１：１０（導入量比）が適当であり、よ
り好ましくは８：２〜４：６とされるのが望ましい。In the present invention, the active species (A
) and the active species (B) can be determined as desired depending on the salt m conditions, the type of active species, etc., but preferably 10:1-1:10 (introduced amount ratio) is appropriate. , more preferably 8:2 to 4:6.

また本発明の方法により形成される堆積膜は、成膜中又
は成膜後に不純物元素でドーピングすることが可能であ
る。使用する不純物元素としては、ｐ型不純物として、
周期律表第■族Ａ（７）元素１例えばＢ、Ａｌ、Ｇａ、
Ｉｎ、ＴＩ等が好適なものとして挙げられ、ｎ型不純物
としては、周期律表第Ｖ族Ａの元素、例えばＰ。Further, the deposited film formed by the method of the present invention can be doped with an impurity element during or after film formation. The impurity elements used include p-type impurities,
Periodic Table Group Ⅰ A (7) Element 1 For example, B, Al, Ga,
Preferred examples include In and TI, and examples of the n-type impurity include elements of group V A of the periodic table, such as P.

Ａｓ、Ｓｂ、Ｂｉ等が好適なものとして挙げられるが、
特にＢ、Ｇａ、Ｐ、Ｓｂ等が最適である。ドーピングさ
れる不純物の量は、所望される電気的・光学的特性に応
じて適宜決定される。Preferred examples include As, Sb, Bi, etc.
In particular, B, Ga, P, Sb, etc. are optimal. The amount of impurities to be doped is appropriately determined depending on desired electrical and optical properties.

かかる不純物元素を成分として含む物質（不純物導入用
物質）としては、常温常圧でガス状態であるか、あるい
は少なくとも活性化条件下で気体であり、適宜の気化装
置で容易に気化し得る化合物を選択するのが好ましい、
この様な化合物としては。The substance containing such an impurity element as a component (substance for introducing impurities) is a compound that is in a gaseous state at room temperature and normal pressure, or at least in a gaseous state under activation conditions, and that can be easily vaporized with an appropriate vaporization device. It is preferable to select
As such a compound.

ＰＨ３，Ｐ２Ｈ４，ＰＦ３．ＰＦ５．ＰＣｌ３゜Ａ５Ｈ
３、ＡｓＦ３　、ＡｓＦ５．ＡｓＣｌ３　。PH3, P2H4, PF3. PF5. PCl3゜A5H
3, AsF3, AsF5. AsCl3.

ＳｂＨ３，ＳｂＦ５　、ＳｉＨ３，ＢＦ３　、ＢＣｌ３
　、ＢＢｒ３　、Ｂ２）（６，８４Ｈ１０，Ｂ５Ｈ９・
　Ｂ　５　Ｈ１１、Ｂ　６　Ｈ１０、Ｂ　６　Ｈ１２、
Ａ　　ＩＣｌ３等を挙げることができる。不純物元素を
含む化合物は、１種用いても２種以上併用してもよいゆ 不純物導入用物質は、活性化空間（Ａ）又は／及び活性
化空間（Ｂ）に、活性種（Ａ）及び活性種（Ｂ）の夫々
を生成する各物質と共に導入されて活性化しても良いし
、或いは、活性化空間（Ａ）及び活性化空間（Ｂ）とは
別の第３の活性化空間（Ｃ）に於いて活性化されても良
い。不純物導入用物質を活性化するには、活性種（Ａ）
及び活性種（Ｂ）を生成するに列記された前述の活性化
エネルギーを適宜選択して採用することが出来る。不純
物導入用物質を活性化して生成される活性種（ＰＮ）は
活性種（Ａ）又は／及び活性種（Ｂ）と予め混合されて
、又は、独立に成膜空間に導入される。SbH3, SbF5, SiH3, BF3, BCl3
, BBr3, B2) (6,84H10,B5H9・
B 5 H11, B 6 H10, B 6 H12,
Examples include A ICl3. The compound containing the impurity element may be used alone or in combination of two or more.The impurity-introducing substance contains the active species (A) and The active species (B) may be introduced and activated together with each substance that generates each, or a third activation space (C) separate from the activation spaces (A) and (B) may be activated. ) may be activated. To activate the impurity introduction substance, activate species (A)
The above-mentioned activation energies listed in ``and for generating activated species (B)'' can be appropriately selected and employed. The active species (PN) generated by activating the impurity introduction substance are mixed with the active species (A) and/or the active species (B) in advance, or are introduced into the film forming space independently.

次に、本発明方法によって形成される電子写真用像形成
部材の典型的な例を挙げて本発明を説明する。Next, the present invention will be described with reference to typical examples of electrophotographic image forming members formed by the method of the present invention.

第１図は本発明によって得られる典型的な電子写真用像
形成部材としての光導電部材の構成例を説明するための
模式図である。FIG. 1 is a schematic diagram for explaining an example of the structure of a photoconductive member as a typical electrophotographic image forming member obtained by the present invention.

第１図に示す光導電部材１０は、電子写真用像形成部材
として適用させ得るものであって。The photoconductive member 10 shown in FIG. 1 can be applied as an electrophotographic imaging member.

光導電部材用としての支持体１１の上に、必要に応じて
設けられる中間層１２、及び感光層１３で構成される層
構成を有している。It has a layer structure consisting of a support 11 for a photoconductive member, an intermediate layer 12 provided as necessary, and a photosensitive layer 13.

光導電部材ｌＯの製造に当っては、中間層１２又は／及
び感光層１３を本発明の方法によって作成することが出
来る。更に、光導電部材１０が感光層１３の表面を化学
的、物理的に保護する為に設けられる保護層、或いは電
気的耐圧力を向上させる目的で設けられる下部障壁層又
は／及び上部障壁層を有する場合には、これ等を本発明
の方法で作成することも出来る。In manufacturing the photoconductive member 10, the intermediate layer 12 and/or the photosensitive layer 13 can be created by the method of the present invention. Furthermore, the photoconductive member 10 may include a protective layer provided to chemically and physically protect the surface of the photosensitive layer 13, or a lower barrier layer and/or an upper barrier layer provided for the purpose of improving electrical withstand pressure. If so, these can also be created by the method of the present invention.

支持体１１としては、導電性でも電気絶縁性であっても
良い。導電性支持体としては、例えばＮｉＣｒ、ステン
レス、ＡＩ、Ｃｒ、Ｍｏ。The support 11 may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, AI, Cr, and Mo.

Ａｕ、Ｉｒ、Ｎｂ、Ｔａ、Ｖ、Ｔｉ、Ｐｔ。Au, Ir, Nb, Ta, V, Ti, Pt.

Ｐｄ等の金属又はこれ等の合金が挙げられる。Examples include metals such as Pd and alloys thereof.

電気絶縁性支持体としては、ポリエステル。Polyester is used as the electrically insulating support.

ポリエチレン、ポリカーボネート、セルローズアセテー
ト、ポリプロピレン、ポリ塩化ビニル、ポリ塩化ビニリ
デン、ポリスチレン、ポリアミド等の合成樹脂のフィル
ム又はシート、ガラス、セラミック、紙等が通常使用さ
れる。これらの電気絶縁性支持体は、好適には少なくと
もその一方の表面が導電処理され、該導電処理された表
面側に他の層が設けられるのが望ましい。Films or sheets of synthetic resins such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Preferably, at least one surface of these electrically insulating supports is subjected to conductive treatment, and another layer is preferably provided on the conductive treated surface side.

例えばガラスであれば、その表面がＮ　ｉ、　Ｃｒ　。For example, if it is glass, its surface is Ni, Cr.

ＡＩ、Ｃｒ、Ｍｏ、Ａｕ、Ｉｒ、Ｎｂ、Ｔａ、、Ｖ、Ｔ
ｔ、Ｐｔ、Ｐｄ、Ｉｎ２Ｏ３，５ｎ０２゜ＩＴＯ（Ｉ　
ｎ２０３＋５ｎｏ２）等の薄膜を設けることによって導
電処理され、あるいはポリエステルフィルム等の合成樹
脂フィルムであれば、ＮｉＣｒ、ＡＩ、Ａｇ、Ｐｂ、Ｚ
ｎ、Ｎｉ。AI, Cr, Mo, Au, Ir, Nb, Ta, , V, T
t, Pt, Pd, In2O3,5n02゜ITO(I
NiCr, AI, Ag, Pb, Z
n, Ni.

Ａｕ、Ｃｒ、Ｍｏ、Ｉｒ、Ｎｂ、Ｔａ、Ｖ。Au, Cr, Mo, Ir, Nb, Ta, V.

Ｔｉ、Ｐｔ等の金属で真空蒸着、電子ビーム蒸着、スパ
ッタリング等で処理し、又は前記金属でラミネート処理
して、その表面が導電処理される。支持体の形状として
は、円筒状、ベルト状、板状等、任意の形状とし得、所
望によって、その形状が決定されるが、例えば、第１図
の光導電部材１０を電子写真用像形成部材として使用す
るのであれば、連続高速複写の場合には、無端ベルト状
又は円筒状とするのが望ましい。The surface is treated with a metal such as Ti or Pt by vacuum evaporation, electron beam evaporation, sputtering, etc., or laminated with the metal to make the surface conductive. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined depending on the need. For example, the photoconductive member 10 in FIG. If used as a member, in the case of continuous high-speed copying, it is desirable to have an endless belt shape or a cylindrical shape.

中間層１２には、例えば支持体１１の側から感光層１３
中へのキャリアの流入を効果的に阻止し且つ電磁波の照
射によって感光層１３中に生じ、支持体１１の側に向っ
て移動するフォトキャリアの感光層１３の側から支持体
１１の側への通過を容易に許す機能を有する。For example, a photosensitive layer 13 is applied to the intermediate layer 12 from the support 11 side.
This effectively prevents the inflow of carriers into the photosensitive layer 13 and causes the photocarriers generated in the photosensitive layer 13 by electromagnetic wave irradiation and moves toward the support 11 from the photosensitive layer 13 side to the support 11 side. It has the function of allowing easy passage.

この中間層１２は、炭素原子、水素原子（Ｈ）及び／ま
たはハロゲン原子（Ｘ）を構成原子として含むアモルフ
ァスカーボン（以下。This intermediate layer 12 is made of amorphous carbon (hereinafter referred to as "amorphous carbon") containing carbon atoms, hydrogen atoms (H) and/or halogen atoms (X) as constituent atoms.

ａ−Ｃ（Ｈ，Ｘ）Ｊ　と記す、）で構成されると共に、
電気伝導性を支配する物質として１例えばホウ素（Ｂ）
等のｐ型不純物あるいは燐（Ｐ）等のｎ型不純物が含有
されている。又、■り質の向上を計る目的でシリコン原
子を含有させることもできる。a-C(H,X)J), and
As a substance that controls electrical conductivity, for example, boron (B)
It contains p-type impurities such as phosphorus (P) or n-type impurities such as phosphorus (P). Furthermore, silicon atoms may be included for the purpose of improving the quality of the coating.

本発明に於て、中間層１２中に含有されるＢ、Ｐ等の伝
導性を支配する物質の含有量としては、好適には、０．
００１〜５Ｘ１０４ａｔｏｍｉｃ　　ｐＰｍ、　より好
適には０．５〜ＩＸＬＯ４ａｔｏｍｉｃ　　ｐｐｍ、最
適には１〜５ＸＬＯ３ａｔｏｍｉｃ　　ｐｐｍとされる
のが望ましい。In the present invention, the content of substances governing conductivity, such as B and P, contained in the intermediate layer 12 is preferably 0.
001 to 5XLO4 atomic pPm, more preferably 0.5 to IXLO4 atomic ppm, optimally 1 to 5XLO3 atomic ppm.

中間層１２が感光層１３と構成成分が類似、或いは同じ
である場合には中間層１２の形成は、中間層１２の形成
に続けて感光層１３の形成まで連続的に行なうことがで
きる。その場合には、中間層形成用の原料として、活性
化空間（Ａ）で生成された活性種（Ａ）と、活性化空間
（Ｂ）に導入された成膜用の化学物質より生成される活
性種（Ｂ）と必要に応じて不活性ガス及び不純物元素を
成分として含む化合物のガス等から生成された活性種（
Ｂ）と、を夫々別々に或いは適宜必要に応じて混合して
支持体１１の設置しである成膜空間に導入し、各導入さ
れた活性種の共存雰囲気に光エネルギーを作用させるこ
とにより、前記支持体ｌｌ上に中間層１２を形成させれ
ばよい。When the intermediate layer 12 has similar or the same components as the photosensitive layer 13, the formation of the intermediate layer 12 can be performed continuously from the formation of the intermediate layer 12 to the formation of the photosensitive layer 13. In that case, active species (A) generated in the activation space (A) and chemical substances for film formation introduced into the activation space (B) are used as raw materials for forming the intermediate layer. Active species (B) generated from the gas of a compound containing an inert gas and an impurity element as necessary (
B) and are introduced separately or mixed as necessary into the film forming space where the support 11 is installed, and by applying light energy to the coexistence atmosphere of each introduced active species, The intermediate layer 12 may be formed on the support 11.

中間層１２を形成させる際に活性化空間（Ａ）に導入さ
れて活性種（Ａ）を生成する炭素とハロゲンを含む化合
物は１例えば容易にＣＦ２の如き活性種を生成する化合
物を前記の中の化合物より選択するのがより望ましい。The compound containing carbon and halogen that is introduced into the activation space (A) to generate active species (A) when forming the intermediate layer 12 is 1. For example, a compound that easily generates active species such as CF2 is included in the above-mentioned compounds. It is more desirable to select from among the compounds.

また同様にケイ素よハロゲンを含む化合物は。Similarly, compounds containing silicon and halogens.

例えば容易にＳｉＦ２木の如き活性種を生成する化合物
を前記の中の化合物より選択するのがより望ましい。For example, it is more desirable to select a compound that easily generates active species such as SiF2 trees from among the above-mentioned compounds.

中間層１２の層厚は、好ましくは、３０人〜１０＝、よ
り好適には４０人〜８色、最適には５０人〜５ｗとされ
るのが望ましい。The thickness of the intermediate layer 12 is preferably 30 to 10, more preferably 40 to 8 colors, and most preferably 50 to 5W.

感光層１３は、例えばシリコン原子を母体とし、水素原
イ又は／及びｌ＼ロゲン原子（Ｘ）を構成原子とする非
晶質材料（以後ｒＡ−Ｓｉ（Ｈ，Ｘ）Ｊと記す）で構成
され、レーザー光の照射によってフォトキャリアを発生
する電荷発生機能と、該電荷を輸送する電荷輸送機能の
両機能を有する。The photosensitive layer 13 is made of, for example, an amorphous material (hereinafter referred to as rA-Si(H,X)J) that has silicon atoms as its base and hydrogen atoms and/or l\rogen atoms (X) as its constituent atoms. It has both a charge generation function of generating photocarriers by laser light irradiation and a charge transport function of transporting the charges.

感光層１３の層厚としては、好ましくは、１〜１００弘
、より好適には１〜８０ＪＬ、最適には２〜５０ｇとさ
れるのが望ましい。The thickness of the photosensitive layer 13 is preferably 1 to 100 hi, more preferably 1 to 80 JL, and most preferably 2 to 50 g.

感光層１３はノンドープｃ７）ａ−５ｉ　　（Ｈ、Ｘ）
層でおるが、所望により中間層１２に含有される伝導特
性を支配する物質の極性とは別の極性（例えばｎ型）の
伝導特性を支配する物質を含有させてもよいし、あるい
は、同極性の伝導特性を支配する物質を、中間層１２に
含有される実際の４が多い場合には、線量よりも一段と
少ない清にして含有させてもよい。The photosensitive layer 13 is non-doped c7)a-5i (H,X)
However, if desired, the intermediate layer 12 may contain a substance that controls the conduction characteristics of a polarity different from that of the substance that controls the conduction characteristics (for example, n-type), or it may contain the same substance. The substance that governs the polar conduction properties may be contained in a much smaller amount than the dose if the actual amount of 4 contained in the intermediate layer 12 is large.

感光層１３の形成の場合も、本発明の方法によって成さ
れるものであれば中間層１２の場合と同様に、活性化空
間（Ａ）に炭素と／＼ロゲンを含む化合物及びこれとは
別にケイ素とハロゲンを含む化合物が導入され、高温下
でこれ等を分解することにより、或いは放電エネルギー
や光エネルギーを作用させて励起することで活性種（Ａ
）が生成され、該活性種（Ａ）が成膜空間に導入される
。In the case of forming the photosensitive layer 13, as well, as in the case of the intermediate layer 12, if it is formed by the method of the present invention, a compound containing carbon and /\logen in the activation space (A), and separately from this, Compounds containing silicon and halogen are introduced, and active species (A
) is generated, and the active species (A) is introduced into the film forming space.

第２図は、本発明方法を実施して作製される不純物元素
でドーピングされたＡ−Ｓｔ堆積膜を利用したＰＩＮ型
ダイオード・デバイスの典型例を示した模式図である。FIG. 2 is a schematic diagram showing a typical example of a PIN type diode device using an A-St deposited film doped with an impurity element, which is manufactured by carrying out the method of the present invention.

図中、２１は基体、２２及び２７は薄膜電極、２３は半
導体膜であり、ｎ型の半導体層２４、ｉ型の半導体層２
５　、’　ｐ型の半導体層２６によって構成される。半
導体層２４，２５゜２６のいずれか一層の作成に本発明
を適用することが出来るが殊に半導体層２６を本発明の
方法で作成することにより、変換効率を高めることが出
来る。本発明の方法で半導体層２６を作成する場合には
、半導体層２６は、例えばシリコン原子と炭素原子と、
水素原子又は／及びハロゲ７原子とを構成原子とする非
晶質材料（以後ｒＡ−Ｓ　ｉ　Ｃ（Ｈ、Ｘ）　Ｊ　ト記
ｔ）　テｊａＴＩＣすることが出来る。２８は外部電気
回路装置と結合される導線である。In the figure, 21 is a base, 22 and 27 are thin film electrodes, 23 is a semiconductor film, an n-type semiconductor layer 24, an i-type semiconductor layer 2
5,' Consisting of a p-type semiconductor layer 26. Although the present invention can be applied to the production of any one of the semiconductor layers 24, 25 and 26, the conversion efficiency can be particularly improved by producing the semiconductor layer 26 by the method of the present invention. When creating the semiconductor layer 26 by the method of the present invention, the semiconductor layer 26 includes, for example, silicon atoms and carbon atoms.
An amorphous material whose constituent atoms are hydrogen atoms and/or 7 halogen atoms (hereinafter referred to as rA-S i C (H, 28 is a conductive wire connected to an external electric circuit device.

基体２１としては導電性、半導電性、電気絶縁性のもの
が用いられる。基体２１が 導電性である場合には、薄膜電極２２は省略しても差支
えない。半導電性基体としては、例えば、Ｓｉ、Ｇｅ、
ＧａＡｓ、ＺｎＯ，ＺｎＳ等の半導体が挙げられる。薄
膜電極２２．２７としては例えば、Ｎ　ｉ　Ｃｒ　、　
Ａ　Ｉ　、　Ｃｒ　、　Ｍ　ｏ　。The base 21 may be conductive, semiconductive, or electrically insulating. If the base body 21 is conductive, the thin film electrode 22 may be omitted. Examples of the semiconductive substrate include Si, Ge,
Examples include semiconductors such as GaAs, ZnO, and ZnS. As the thin film electrode 22.27, for example, N i Cr,
A I, Cr, Mo.

Ａｕ、Ｉｒ、Ｎｂ、Ｔａ、Ｖ、Ｔｉ、Ｐｔ。Au, Ir, Nb, Ta, V, Ti, Pt.

Ｐｄ　、Ｉ　ｎ２０３．５ｎ０２　、ＺＴＯ（Ｉ　ｎ２
０３　＋Ｓ　ｎ０２）等の８Ｉｔｇを、真空蒸着、電子
ビームＭ着、スパッタリング等の処理で基体２１１に設
けることによって得られる。電極２２．２７の膜厚とし
ては、好ましくは３０〜５Ｘ１０４人、より好ましくは
１００〜５×１０３人とされるのか望ましい。Pd, I n203.5n02, ZTO(I n2
It can be obtained by providing 8Itg such as 03 +S n02) on the substrate 211 through a process such as vacuum evaporation, electron beam M deposition, or sputtering. The thickness of the electrodes 22.27 is preferably 30 to 5×10 4 , more preferably 100 to 5×10 3 .

半導体層を構成する膜体を必要に応じてｎｌ又はｐ型と
するには、層形成の際に、不純物元素のうちｎ型不純物
又はｐ型不純物、あるいは両不純物を形成される層中に
その量を制御し乍らドーピングしてやる事によって形成
される。In order to make the film forming the semiconductor layer nl or p-type as necessary, during layer formation, n-type impurities, p-type impurities, or both impurities are added to the layer to be formed. It is formed by doping in a controlled amount.

ｎ型、ｉ型及びｐ型の半導体層を形成する場合、何れか
１つの層乃至全部の層を本発明方法により形成すること
ができ、成膜は、活性化空間（Ａ）に炭素とハロゲンを
含む化合物及びこれとは別にケイ素とハロゲンを含む化
合物が導入され、活性化エネルギーの作用下でこれ等を
励起し、分解することで、例えばＣＦ３Ｘ。When forming n-type, i-type, and p-type semiconductor layers, any one layer or all of the layers can be formed by the method of the present invention, and the film formation is performed using carbon and halogen in the activation space (A). and separately compounds containing silicon and halogens are introduced and excited and decomposed under the action of activation energy, e.g. CF3X.

Ｓ　ｉ　Ｆ２＊等の活性種（Ａ）が生成され、該活性種
（Ａ）が成膜空間に導入される。また、これとは別に、
活性化空間（Ｂ）に成膜用の化合物質と、必要に応じて
不活性ガス及び不純物元素を成分として含む化合物のガ
ス等を、夫々活性化エネルギーによって励起し、分解し
て、夫々の活性種を生成し、夫々を別々に又は適宜に混
合して支持体１１の設置しである成膜空間す に導入して、光エネルギーを用いることにょ形成させれ
ばよい。ｎ型及びｐ型の半導体層の層厚としては、好ま
しくは１００〜１０４人、より好ましくは３００〜２０
００人の範囲が望ましい。Active species (A) such as S i F2* are generated, and the active species (A) are introduced into the film forming space. Also, apart from this,
In the activation space (B), a compound substance for film formation and a compound gas containing an inert gas and an impurity element as a component are excited and decomposed by activation energy, respectively, and their respective activations are activated. Seeds may be generated, each separately or mixed as appropriate, introduced into the film forming space where the support 11 is installed, and formed by using light energy. The layer thickness of the n-type and p-type semiconductor layers is preferably 100 to 104, more preferably 300 to 20
A range of 00 people is desirable.

また、ｉ型の半導体層の層厚としては、好ましくは５０
０〜１０４人、より好ましくは１０００〜１０００人の
範囲が望ましい。Further, the thickness of the i-type semiconductor layer is preferably 50
A range of 0 to 104 people, more preferably 1000 to 1000 people is desirable.

以下に１本発明の具体的実施例を示す。A specific example of the present invention is shown below.

実施例１ 第３図に示した装置を用い、以下の如き操作によって°
　　　　　　　　　　炭素含有アモルファス堆積膜を形
成した。Example 1 Using the apparatus shown in Fig. 3, the following operations were performed to
A carbon-containing amorphous deposited film was formed.

第３図において、１０１は成膜室であり、内部の基体支
持台１０２上に所望の基体１０３が載置される。In FIG. 3, 101 is a film forming chamber, and a desired substrate 103 is placed on a substrate support stand 102 inside.

１０４は基体加熱用のヒーターであり、該ヒーター１０
４は、成膜処理前に基体１０４を加熱処理したり、成膜
後に、形成された膜の特性を一層向上させる為に７ニー
ル処理したりす′る際に使用され、導線１０５を介して
給電され１発熱する。成膜中は、該ヒーター１０４は駆
動されない。104 is a heater for heating the substrate;
4 is used when heat-treating the substrate 104 before film-forming processing, or when performing 7-neal processing after film-forming to further improve the properties of the formed film, and is supplied with power via conductive wire 105. and develops a fever. During film formation, the heater 104 is not driven.

１０６乃至１０９は、ガス供給系であり、成膜用のガス
、及び必要に応じて用いられる不活性ガス、不純物元素
を成分とする化合物のガスの種類に応じて設けられる。Reference numerals 106 to 109 denote gas supply systems, which are provided depending on the type of gas for film formation, an inert gas used as necessary, and a compound gas containing an impurity element as a component.

これ等のガスが標準状態に於いて液状のものを使用する
場合には、適宜の気化装置を具備させる。If these gases are liquid in their standard state, an appropriate vaporizer is provided.

図中ガス供給系１０６乃至１０９の符合にａを付したの
は分岐管、ｂを付したのは流量計。In the figure, the symbol a for the gas supply systems 106 to 109 indicates a branch pipe, and the symbol b indicates a flow meter.

Ｃを付したのは各流量計の高圧側の圧力を計測する圧力
計、ｄ又はｅを付したのは各気体流量を調整するための
バルブである。１２３は活性種（Ｂ）を生成する為の活
性化室（Ｂ）であり、活性化室１２３の周りには、活性
種（Ｂ）を生成させる為の活性化エネルギーを発生する
マイクロ波プラズマ発生装置１２２が設けられている。C indicates a pressure gauge that measures the pressure on the high pressure side of each flow meter, and d or e indicates a valve for adjusting the flow rate of each gas. 123 is an activation chamber (B) for generating active species (B), and around the activation chamber 123 is a microwave plasma generator that generates activation energy for generating active species (B). A device 122 is provided.

ガス導入管１１０より供給される活性種（Ｂ）生成用の
原料ガスは、活性化室（Ｂ）１２３内に於いて活性化さ
れ、生じた活性種（Ｂ）は導入管１２４を通じて成膜室
１０１内に導入される。１１１はガス圧力計である。The raw material gas for generating active species (B) supplied from the gas introduction pipe 110 is activated in the activation chamber (B) 123, and the generated active species (B) is transferred to the film forming chamber through the introduction pipe 124. 101. 111 is a gas pressure gauge.

図中１１２は活性化室（Ａ）、１１３は電気炉、１１４
は固体０粒、１１５は活性種（Ａ）の原料となる気体状
態の炭素とハロゲンを含む化合物の導入管であり、活性
化室（Ａ）１１２で生成された活性種（Ａ）は導入管１
１６を介して成膜室１０１内に導入される。In the figure, 112 is an activation chamber (A), 113 is an electric furnace, and 114
115 is an introduction pipe for a compound containing gaseous carbon and halogen, which is the raw material for the activated species (A), and the active species (A) generated in the activation chamber (A) 112 are introduced into the introduction pipe. 1
16 into the film forming chamber 101.

１１７は光エネルギー発生装置であって、例えば水銀ラ
ンプ、キセノンランプ、炭酸ガスレーザー、アルゴンイ
オンレーザ−、エキシマレーザ−等が用いられる。Reference numeral 117 denotes a light energy generating device, for example, a mercury lamp, a xenon lamp, a carbon dioxide laser, an argon ion laser, an excimer laser, or the like.

光エネルギー発生装置１１７から適宜の光学系を用いて
基体１０３全体あるいは基体１０３の所望部分に向けら
れた光１１８は、矢印１１９の向きに流れている活性種
に照射され、照射された活性種は相互的に化学反応する
事によって基体１０３の全体あるいは所望部分にＡ−３
ｔ（Ｈ，Ｘ）の堆積膜を形成する。また、図中、１２０
は排気バルブ、１２１は排気管である。Light 118 directed from the optical energy generating device 117 to the entire substrate 103 or a desired portion of the substrate 103 using an appropriate optical system is irradiated onto active species flowing in the direction of an arrow 119, and the irradiated active species are A-3 is applied to the entire substrate 103 or a desired portion by a mutual chemical reaction.
A deposited film of t(H,X) is formed. Also, in the figure, 120
121 is an exhaust valve, and 121 is an exhaust pipe.

先スポリエチレンテレフタレートフイルム製の基体１０
３を支持台１０２上に載置し、排気装置（不図示）を用
いて成膜室ｌｏｔ内を排気し、約１０４Ｔｏｒｒに減圧
した６ガス供給用ポンベ１０６よりＨ２ガス１５０ＳＣ
ＣＭ、あるいはこれとＰＨ３ガスまたはＢ２Ｈ６ガス（
何れも１１０００ｐｐ、４＜素ガス希釈）４０ＳＣＣＭ
とを混合したガスをガス導入管１１０を介して活性化室
（Ｂ）１２３に導入した。活性化室（Ｂ）１２３内に導
入されたＨ２カス等はマイクロ波プラズマ発生装置１２
２により活性化されて活性化水素等とされ、導入管１２
４を通じて、活性化水素等を成膜室１０１に導入した。Substrate 10 made of polyethylene terephthalate film
3 was placed on the support stand 102, the inside of the film forming chamber lot was evacuated using an exhaust device (not shown), and 150 SC of H2 gas was supplied from the gas supply pump 106, which was reduced in pressure to about 104 Torr.
CM, or PH3 gas or B2H6 gas (
All 11000pp, 4<element gas dilution) 40SCCM
A mixed gas was introduced into the activation chamber (B) 123 via the gas introduction pipe 110. The H2 scum etc. introduced into the activation chamber (B) 123 are transferred to the microwave plasma generator 12.
2, it is activated into activated hydrogen, etc., and is passed through the introduction pipe 12.
4, activated hydrogen and the like were introduced into the film forming chamber 101.

また他方、活性化室（Ａ）１０２に固体０粒１１４を詰
めて、電気炉１１３により加熱し、約１１００　’Ｃに
保ち、Ｃを赤熱状態とし、そこへ導入管１１５を通じて
不図示のボンベよりＣＦ４を吹き込むことにより、ＣＦ
３Ｘの活性種を生成させ、該ＣＦ２＊を導入管１１６を
経て、成膜室ｌｏｔへ導入した。On the other hand, the activation chamber (A) 102 is filled with solid 0 grains 114, heated in an electric furnace 113, kept at about 1100'C to bring C to a red-hot state, and then fed through an inlet pipe 115 into a cylinder (not shown). By injecting CF4, CF
3X active species were generated, and the CF2* was introduced into the film forming chamber lot through the introduction pipe 116.

このようにして、成膜室１０１内の内圧を０．４Ｔｏｒ
ｒに保ちつツｌ　Ｋ　ＷＸ　ｅランプから基体１０３に
垂直に照射して、ノンドープのあるいはドーピングされ
た炭素含有アモルファス膜（膜厚７０Ｇ人）を形成した
。成膜速度は２１人／ｓｅｃであったΦ 次いで、得られた　　゛ 炭素含有アモルファス膜試料を 蒸着槽に入れ、真空度１Ｏ−５Ｔｏｒｒでクシ型のＡｔ
ギャップ電極（ギヤツブ長ｚｓｏｇ、巾５ｍｍ）を形成
した後、印加電圧ｌＯｖで暗電流を測定し、暗導電率σ
ｄを求めて、各試料の膜特性を評価した。結果を第１表
に示した。In this way, the internal pressure inside the film forming chamber 101 is reduced to 0.4 Torr.
A non-doped or doped carbon-containing amorphous film (thickness: 70G) was formed by vertically irradiating the substrate 103 from a TK WX e lamp while maintaining the temperature at r. The film formation rate was 21 persons/secΦ.Next, the obtained carbon-containing amorphous film sample was placed in a vapor deposition tank, and a comb-shaped At
After forming a gap electrode (gear length zsog, width 5 mm), the dark current was measured with an applied voltage of lOv, and the dark conductivity σ
The film characteristics of each sample were evaluated by determining d. The results are shown in Table 1.

実施例２ ガス供給ポンベ１０６からのＨ２ガスの代りにＨ２／Ｆ
２混合ガス（混合比Ｈ２／Ｆ２＝１５）を用いた以外は
、実施例１と同様の方法と手順に従って炭素含有アモル
ファス（Ａ−Ｃ（Ｈ、Ｘ）　）膜を形成した。各試料に
就いて暗導電率を測定し、結果を第１表に示した。Example 2 H2/F instead of H2 gas from gas supply pump 106
A carbon-containing amorphous (A-C(H, The dark conductivity of each sample was measured and the results are shown in Table 1.

第１表 第１表から、本発明によると電気特性に優れファス膜が
得られることが判かった。From Table 1, it was found that according to the present invention, a fast film with excellent electrical properties could be obtained.

実施例３ 第４図に示す装置を使い、以下の如き操作によって第１
図に示した如き層構成のドラム状電子写真用像形成部材
を作成した。Example 3 Using the apparatus shown in Fig. 4, the first
A drum-shaped electrophotographic image forming member having a layer structure as shown in the figure was prepared.

第４図において、２０１は成膜室、２０２は活性化室（
Ａ）、２０３は電気炉、２０４は固体０粒、２０５は活
性種（Ａ）の原料物質導入管、２０６は活性種（Ａ）導
入管、２０７はモーター、２０８は第３図の１０４と同
様に用いられる加熱ヒーター、２０９　、２１０は吹き
出し管、２１１はＡｔシリンダー状基体、２１２は排気
バルブを示している。又、２１３乃至２１６は第３図中
１０６乃至１０９と同様の原料ガス供給源であり、２１
７−１はガス導入管である。In FIG. 4, 201 is a film forming chamber, and 202 is an activation chamber (
A), 203 is an electric furnace, 204 is 0 solid particles, 205 is an active species (A) raw material introduction pipe, 206 is an active species (A) introduction pipe, 207 is a motor, 208 is the same as 104 in Fig. 3 209 and 210 are blowout pipes, 211 is an At cylindrical base, and 212 is an exhaust valve. Further, 213 to 216 are raw material gas supply sources similar to 106 to 109 in FIG.
7-1 is a gas introduction pipe.

成膜室２０１にＡｔシリンダー基体２１１をつり下げ、
その内側に加熱ヒーター２０８を備え、モーター２０７
により回転できる様にする。２１８は光エネルギー発生
装置であって、Ａｔシリンダー２１１の所望部分に向け
て光２１９が照射される。An At cylinder base 211 is suspended in the film forming chamber 201,
A heating heater 208 is provided inside the motor 207.
Allows for rotation. Reference numeral 218 denotes a light energy generator, which irradiates light 219 toward a desired portion of the At cylinder 211.

また、活性化室（Ａ）２０２に固体０粒２０４を詰めて
、電気炉２０３により加熱し、約１０００℃に保ち、Ｃ
を赤熱状態とし、そこへ導入管２０６を通じて不図示の
ボンベよりＣＦ４を吹き込むことにより、活性種（Ａ）
としてのＣＦ２＊を生成させ、該ＣＦ２）ｋを導入管２
０６を経て、成膜室２０１へ導入した。In addition, the activation chamber (A) 202 is filled with solid 0 grains 204, heated in an electric furnace 203, kept at about 1000°C, and
The active species (A)
CF2* is generated as
06, it was introduced into the film forming chamber 201.

また、活性化室（Ａ）２０２と同様の構造の活性化室（
Ｃ）（不図示）より同様にして固体Ｓ４粒とＳｉＦ４よ
りＳ　ｉ　Ｆ２）Ｈの活性種（Ｃ）を導入した。In addition, an activation chamber (with a structure similar to that of the activation chamber (A) 202) is also provided.
C) (not shown) In the same manner, active species (C) of SiF2)H were introduced from solid S4 grains and SiF4.

一方、導入管２１７−１よりＦ２ガスを活性化室（Ｂ）
２２０内に導入した。導入されたＦ２ガスは活性化室（
Ｂ）２２０に於いてマイクロ波プラズマ発生装置２２１
によりプラズマ化等の活性化処理を受けて活性化水素と
なり、導入管２１．７−２を通じて成膜室２０１内に導
入された。この際、必要に応じてＰＨ３、Ｂ２Ｈ６等の
不純物ガスも活性化室（Ｂ）２２０内に導入されて活性
化された。成膜室２０１内の内圧を１．０Ｔｏｒｒに保
ちつつ、ｌ　Ｋ　Ｗ　Ｘ　ｅランプ２１８からＡｔシリ
ンダー基体２１１の周面に対し垂直に光照射した。Meanwhile, F2 gas is introduced into the activation chamber (B) from the introduction pipe 217-1.
It was introduced in 220. The introduced F2 gas enters the activation chamber (
B) Microwave plasma generator 221 at 220
The activated hydrogen was subjected to an activation process such as plasma formation, and was introduced into the film forming chamber 201 through the introduction pipe 21.7-2. At this time, impurity gases such as PH3 and B2H6 were also introduced into the activation chamber (B) 220 for activation, if necessary. While maintaining the internal pressure in the film forming chamber 201 at 1.0 Torr, light was irradiated perpendicularly to the circumferential surface of the At cylinder base 211 from the lKWXe lamp 218.

Ａｌシリンダー基体２１１は回転させ、排ガスは排気バ
ルブ２１２の開口を適宜に調整して中間 排気させた。このようにして藤洸暦１２が形成Ｈ２／Ｂ
２Ｈ６（容量％でＢ２Ｈ６ガスが０．２％）の混合ガス
を導入し、膜厚２０Ｐ幹央で成膜された。The Al cylinder base 211 was rotated, and the exhaust gas was intermediately exhausted by appropriately adjusting the opening of the exhaust valve 212. In this way, Fujiko Calendar 12 was formed H2/B
A mixed gas of 2H6 (0.2% B2H6 gas by volume) was introduced to form a film with a film thickness of 20P.

比較例ｌ ＣＦ４と５ｆＦ４とＦ２及びＢ２Ｈ６の各ガスを使用し
て成膜室２０１と同様の構成成膜室を用意して１３．５
６ＭＨｚの高周波装置を備え、一般的なプラズマＣＶＤ
法により、第１図に示す層構成の電子写真用像形成部材
を形成した。Comparative Example 1 A film forming chamber with the same configuration as the film forming chamber 201 was prepared using CF4, 5fF4, F2, and B2H6 gases, and 13.5
Equipped with 6MHz high frequency equipment, general plasma CVD
An electrophotographic image forming member having the layer structure shown in FIG. 1 was formed by the method.

実施例３及び比較例１で得られたドラム状の電子写真用
像形成部材の製造条件と性能を第２表に示した。Table 2 shows the manufacturing conditions and performance of the drum-shaped electrophotographic image forming members obtained in Example 3 and Comparative Example 1.

実施例４ 第３図の装置を用いて、第２図に示したＰＩＮ型ダイオ
ードを作製した。Example 4 Using the apparatus shown in FIG. 3, a PIN diode shown in FIG. 2 was manufactured.

まず、１０００人のＩＴＯ膜２２を蒸着したポリエチレ
ンナフタレートフィルム２１を支持台に載置し、１０４
Ｔｏｒｒに減圧した後、実施例３と同様にして生成され
た活性種ＳｉＦ２＊、活性種ＣＦ２＊又、Ｈ２ガス、Ｐ
Ｈ３ガス（１０００ＰＰｍ水素ガス稀釈）の夫々を活性
化室（Ｂ）１２３に導入して、活性化した。First, a polyethylene naphthalate film 21 on which 1000 ITO films 22 were vapor-deposited was placed on a support stand, and 104
After reducing the pressure to Torr, active species SiF2*, active species CF2*, H2 gas, P
H3 gas (1000 PPm hydrogen gas dilution) was introduced into the activation chamber (B) 123 and activated.

次いでこの活性化されたガスを導入管１１６を介して成
膜室ｌＯ１内に導入した。成膜室１０１内の圧力を０．
　Ｉ　Ｔ　ｏ　ｒ　ｒに保ちながらＩＫＷＸｅランプで
光照射してＰでドーピングされたｎ型Ａ−５ｉＣ（Ｈ，
Ｘ）膜２４（膜厚７００人）を形成した。Next, this activated gas was introduced into the film forming chamber IO1 via the introduction pipe 116. The pressure inside the film forming chamber 101 is set to 0.
P-doped n-type A-5iC (H,
X) Film 24 (film thickness: 700 layers) was formed.

次いで、ＰＨ３ガスの導入を停止しＳｉＦ２＊／（：　
Ｆ　２　＊の値を３倍にした以外はｎ型Ａ−ＳＥＣ（Ｈ
，Ｘ）膜の場合と同一の方法でノンドープ５Ａ−５ｉＣ
（Ｈ，Ｘ）膜２５（膜厚５ｏｏｏ人）を形成した。Next, the introduction of PH3 gas was stopped and SiF2*/(:
n-type A-SEC (H
, X) Non-doped 5A-5iC using the same method as the
A (H,X) film 25 (500 mm thick) was formed.

次いで、Ｈ２ガスとともに８２Ｈ６ガス（１０００ｐ　
ｐｍ水素ガス稀釈）を使用し、それ以外はｎ型と同じ条
件でＢでドーピングされたｐ型Ａ−３ｉ　Ｃ（Ｈ、Ｘ）
膜２６（膜厚７００人）を形成した。さらに、このＰ型
膜上に真空蒸着により膜厚ｔｏｏｏ人のＡＩ電極２７を
形成し、ＰＩＮ型ダイオードを得た。Next, 82H6 gas (1000p
p-type A-3i C(H,
A film of 26 (film thickness: 700 layers) was formed. Further, an AI electrode 27 with a film thickness of too thick was formed on this P-type film by vacuum evaporation to obtain a PIN-type diode.

かくして得られたダイオード素子（面ａ１ｃｍ２）のＩ
−Ｖ特性を測定し、整流特性及び光起電力効果を評価し
た。結果を第３表に示した。I of the diode element thus obtained (surface a1 cm2)
-V characteristics were measured, and rectification characteristics and photovoltaic effects were evaluated. The results are shown in Table 3.

また、光照射特性においても基体側から光を導入し、光
照射強度ＡＭＩ　（約１００ｍＷ／ｃｍ２）で、変換効
率８．５％以上、開放端電圧０、９２　Ｖ、短絡電流１
０．５　ｍ　Ａ　／　ｃ　ｍ２が得られた。In addition, regarding light irradiation characteristics, light is introduced from the substrate side, and at light irradiation intensity AMI (approximately 100 mW/cm2), conversion efficiency is 8.5% or more, open circuit voltage is 0, 92 V, and short circuit current is 1.
0.5 mA/cm2 was obtained.

実施例５ 導入管１１０からのＨ２ガスの代りに、Ｈ２／Ｆ２混合
ガス（Ｈ２／Ｆ２＝１５）を用いた以外は、実施例４と
同様にして実施例４で作成したのと同様のＰＩＮ型ダイ
オードを作製した。この試料に就いて整流特性および光
起電力効果を評価し、結果を第３表に示した。Example 5 The same PIN as in Example 4 was created in the same manner as in Example 4, except that H2/F2 mixed gas (H2/F2=15) was used instead of H2 gas from the inlet pipe 110. A type diode was fabricated. This sample was evaluated for rectification characteristics and photovoltaic effect, and the results are shown in Table 3.

第３表から、本発明によれば、従来に比べて良好な光学
的・電気的特性を有する非晶質半導体ＰＩＮ型ダイオー
ドが得られることが判かった。From Table 3, it was found that according to the present invention, an amorphous semiconductor PIN type diode having better optical and electrical characteristics than the conventional one could be obtained.

〔発明の効果〕〔Effect of the invention〕

本発明の堆積膜形成法によれば、形成される膜に所望さ
れる電気的、光学的、光導電的及び機械的特性が向上し
、しかも基体を高温に保持することなく高速成膜が可能
となる。また、成膜における再現性が向上し、膜品質の
向上と膜質の均一化が可能になると共に、膜の大面積化
に有利であり、膜の生産性の向上並びに量産化を容易に
達成することができる。更に励起エネルギーとして光エ
ネルギーを用いるので、耐熱性に乏しい基体上にも成膜
できる、低温処理によって工程の短縮化を図れるといっ
た効果が発揮される。According to the deposited film forming method of the present invention, the desired electrical, optical, photoconductive, and mechanical properties of the formed film are improved, and high-speed film formation is possible without maintaining the substrate at a high temperature. becomes. In addition, the reproducibility in film formation is improved, making it possible to improve film quality and make the film uniform. It is also advantageous for increasing the area of the film, improving film productivity and easily achieving mass production. be able to. Furthermore, since light energy is used as excitation energy, it is possible to form a film even on a substrate with poor heat resistance, and the process can be shortened by low-temperature treatment.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明方法を用いて製造される電子写真用像形
成部材の構成例を説明するための模式図である。 第２図は本発明方法を用いて製造されるＰＩＮ型ダオイ
ードの構成例を説明するための模式第３図及び第４図は
それぞれ実施例で用いた発明方法を実施するための装置
の構成を説明するための模式図である。 １０−−−一電子写真用像形成部材、 １ｔ−−−一基体、 １２−−−一中間層、 １３−−−一感光層、 ２１−−−一基体、 ２２．２７−−−−薄膜電極。 ２４−−−−ｎ型半導体。 ２５−−−−　ｉ型半導体。 ２６−−−−ｐ型半導体、 １０１　、２０１−−−一成膜室、 １１１　、２０２−−−一活性化室（Ａ）、１０６．１
０７，１０８，１０９，２１３゜２１４．２１５，２１
６−−−−ガス供給系、１０３　、２１１−−−一基体
。 １１７．２１８−−−一光エネルギー発生装置。FIG. 1 is a schematic diagram for explaining an example of the structure of an electrophotographic image forming member manufactured using the method of the present invention. FIG. 2 is a schematic diagram for explaining an example of the structure of a PIN type daiode manufactured using the method of the present invention. FIGS. It is a schematic diagram for explanation. 10---one electrophotographic imaging member, 1t---one substrate, 12---one intermediate layer, 13---one photosensitive layer, 21---one substrate, 22.27---thin film electrode. 24---n-type semiconductor. 25--- i-type semiconductor. 26---p-type semiconductor, 101, 201----film formation chamber, 111, 202----activation chamber (A), 106.1
07,108,109,213゜214.215,21
6----Gas supply system, 103, 211---One substrate. 117.218---One light energy generator.

Claims (1)

【特許請求の範囲】 　基体上に堆積膜を形成する為の成膜空間内 に、炭素とハロゲンを含む化合物を分解することにより
生成される活性種（Ａ）と、該活性種（Ａ）と化学的相
互作用をする成膜用の化学物質より生成される活性種（
Ｂ）とを夫々別々に導入し、これらに光エネルギーを照
射して化学反応させる事によって、前記基体上に堆積膜
を形成する事を特徴とする堆積膜形成法。[Claims] In a film forming space for forming a deposited film on a substrate, active species (A) generated by decomposing a compound containing carbon and halogen; Active species (
A deposited film forming method characterized in that a deposited film is formed on the substrate by separately introducing B) and irradiating them with light energy to cause a chemical reaction.
JP2980685A 1985-02-18 1985-02-18 Formation of deposited film Pending JPS61189625A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2980685A JPS61189625A (en) 1985-02-18 1985-02-18 Formation of deposited film
US06/943,071 US4728528A (en) 1985-02-18 1986-12-18 Process for forming deposited film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2980685A JPS61189625A (en) 1985-02-18 1985-02-18 Formation of deposited film

Publications (1)

Publication Number Publication Date
JPS61189625A true JPS61189625A (en) 1986-08-23

Family

ID=12286262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2980685A Pending JPS61189625A (en) 1985-02-18 1985-02-18 Formation of deposited film

Country Status (1)

Country Link
JP (1) JPS61189625A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221371A (en) * 1985-03-26 1986-10-01 Kyocera Corp Method for synthesizing diamond
JPH04116172A (en) * 1990-08-31 1992-04-16 Energy Conversion Devices Inc Method of directly building up active species on distantly placed substrate
JP2013163841A (en) * 2012-02-10 2013-08-22 Jtekt Corp Carbon film forming apparatus and carbon film forming method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140267A (en) * 1976-05-19 1977-11-22 Nippon Telegr & Teleph Corp <Ntt> Vapor epitaxial crystal growing device
JPS52143980A (en) * 1976-05-25 1977-11-30 Nec Corp Equipment for plasma deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140267A (en) * 1976-05-19 1977-11-22 Nippon Telegr & Teleph Corp <Ntt> Vapor epitaxial crystal growing device
JPS52143980A (en) * 1976-05-25 1977-11-30 Nec Corp Equipment for plasma deposition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221371A (en) * 1985-03-26 1986-10-01 Kyocera Corp Method for synthesizing diamond
JPH04116172A (en) * 1990-08-31 1992-04-16 Energy Conversion Devices Inc Method of directly building up active species on distantly placed substrate
JP2013163841A (en) * 2012-02-10 2013-08-22 Jtekt Corp Carbon film forming apparatus and carbon film forming method

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