JPS61177372A - Production of boron nitride film - Google Patents
Production of boron nitride filmInfo
- Publication number
- JPS61177372A JPS61177372A JP1906785A JP1906785A JPS61177372A JP S61177372 A JPS61177372 A JP S61177372A JP 1906785 A JP1906785 A JP 1906785A JP 1906785 A JP1906785 A JP 1906785A JP S61177372 A JPS61177372 A JP S61177372A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- reaction chamber
- substrate
- nitride film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は熱分解窒化ホウ素（以下、ＰＢＮと略す）又は
六方晶窒化ホウ素（以下、ＥｍＮと略す）から成る窒化
ホウ素（ＢＮ）膜の製法に関するもので・ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a method for producing a boron nitride (BN) film made of pyrolytic boron nitride (hereinafter abbreviated as PBN) or hexagonal boron nitride (hereinafter abbreviated as EmN). It is related to.
ＢＮは高い熱伝導率を有して耐熱衝撃性に優れ、そして
電気的絶縁性、化学的安定性、耐酸化性、自己潤滑性に
も優れているため種々の広範な用途に注目されている。BN has high thermal conductivity and excellent thermal shock resistance, as well as excellent electrical insulation, chemical stability, oxidation resistance, and self-lubricating properties, so it is attracting attention for a wide variety of applications. .
ＢＮの製法には主として粉末を製造して、この粉末を原
料にして焼成する方法が採用されているが、ハロゲン化
硼素とアンモニアを高温で気相反応させる方法も特殊な
目的のために採られている。The main manufacturing method for BN is to produce powder and then use this powder as a raw material for firing, but a method in which boron halide and ammonia are reacted in a gas phase at high temperatures has also been adopted for special purposes. ing.
この方法においてはＢＮ生成源をガスにして気相反応す
るため比較的高純度でアシ、反応を減圧下で行なうこと
によｊＤ ＰＢＮが得られている。かかるＢＮは、例え
ばＰＢＮでコーティングされたグラファイトから成る真
空蒸着用ボートなどに用いられている。（特開昭５４−
１０１７８１号公報参照）従来周知の通り、２ＮＨｓ
＋ ＢｔＨｓ→２．ＢＮ ＋ ６Ｈ２。In this method, since the BN generation source is converted into a gas and the gas phase reaction is carried out, jD PBN can be obtained with relatively high purity and the reaction is carried out under reduced pressure. Such BN is used, for example, in vacuum deposition boats made of graphite coated with PBN. (Unexamined Japanese Patent Publication No. 54-
(Refer to Publication No. 101781) As is conventionally known, 2NHs
+ BtHs→2. BN+6H2.
４ＮＨｓ ＋ ＢＱＩｓ−４ＢＮ ＋ ８ＮＨａＱＪｔ
等の気相反応法によシ主にＰＢＮが比較的高純度に形成
でき、又、ＢｔＯｓ＋ ２ＮＨｓ →２．ＢＮ ＋ ８
ＨｚＯ、ＢｘＯｓ ＋ ｓｃ ＋ Ｎｔ →２ＢＮ−１
−３ＣＯ等の化学反応によシ主にＨＢＮも得られるが、
現在のところ未だ品買上満足できるものが得られておら
ず、 ＢＮ自体が有している本来の優れた特性を発揮さ
せんがために高純度且つ緻密なＰＢＮやＩＩＢＮが得ら
れるのが望まれている。そこで本発明者がこのＢＮ膜の
製法において鋭意研究に努めた結果、ＰＢＮ ＋ＥＩＢ
Ｎの生成を阻害する因子を見い出し、本発明を完成する
に至った。4NHs + BQIs-4BN + 8NHaQJt
PBN can be mainly formed with relatively high purity by gas phase reaction methods such as BtOs + 2NHs → 2. BN+8
HzO, BxOs + sc + Nt →2BN-1
HBN is also mainly obtained through chemical reactions such as -3CO, but
At present, we have not yet been able to obtain a product that satisfies our purchasing needs, and it is desired to obtain highly pure and dense PBN and IIBN in order to bring out the original excellent properties of BN itself. ing. Therefore, as a result of the inventor's intensive research into the manufacturing method of this BN film, PBN + EIB
We have discovered a factor that inhibits the production of N, and have completed the present invention.
〔発明の目的〕
従って本発明の目的は高純度且つ緻密なＰＢＮやＨＢＮ
を基体上に合成するＢＮ膜の製造方法を提供せんとする
ものである。[Object of the invention] Therefore, the object of the present invention is to produce highly pure and dense PBN and HBN.
The present invention aims to provide a method for producing a BN film by synthesizing the above on a substrate.
本発明の他の目的は高純度且つ緻密なＰＢＮ −？ Ｈ
ＢＮから成るＢＮ膜を高い膜生成速度で基体上に形成さ
せる方法を提供するにある。Another object of the present invention is to produce highly pure and dense PBN-? H
An object of the present invention is to provide a method for forming a BN film made of BN on a substrate at a high film formation rate.
本発明によれば、内部に基体が設置された反応室にＢＮ
生成用ガスを導入して気相反応法により基体表面上にＰ
ＢＮ又はＨＢＮを生成させる製法において、反応室内部
の酸素原子及び炭素原子の合計量が１００ ｐｐｍ以下
となるように制御したことを特徴とするＢＮ膜の製造方
法が提供される。According to the present invention, BN is added to the reaction chamber in which the substrate is installed.
A generation gas is introduced and P is deposited on the substrate surface using a gas phase reaction method.
Provided is a method for producing a BN film, characterized in that in the production method for producing BN or HBN, the total amount of oxygen atoms and carbon atoms inside a reaction chamber is controlled to be 100 ppm or less.
本発明はＰＢＮ ＋ Ｅ（ＢＮの膜が形成できる薄膜形
成技術のすべてについて適用できると考えられ、この技
術には熱ＣＶＤ法、プラズマＣＶＤ法などの化学蒸着法
、スパッタリング法、真空蒸着法などの物理蒸着法があ
る。The present invention is considered to be applicable to all thin film formation techniques that can form PBN+E (BN films), and this technology includes chemical vapor deposition methods such as thermal CVD and plasma CVD, sputtering, and vacuum evaporation. There is a physical vapor deposition method.
本発明によれば、かかる気相反応法によってＢＮ膜を製
造するに際して、反応室内部に酸素原子及び炭素原子の
合計量が１００ ｐｐｍ以下になるように制御すること
が重要であることが判った。According to the present invention, it has been found that when producing a BN film by such a gas phase reaction method, it is important to control the total amount of oxygen atoms and carbon atoms within the reaction chamber to 100 ppm or less. .
即ち、ＰＢＮ −？ ＨＥＮが生成される反応系におい
ては、ＢＮ生成用ガスにホウ素元素含有ガスと窒素元素
含有ガスを用いたシ、或いはホウ素と窒素の両元素を含
有する化合物ガスを用いたシするが、かかるガスに酸素
原子や炭素原子がその構成元素として存在したシ、或い
は不純物として含有しているとこれらがＢＮ生成の阻害
因子として関与するという新規知見に基づくものである
。That is, PBN -? In the reaction system where HEN is generated, a boron element-containing gas and a nitrogen element-containing gas are used as the BN generating gas, or a compound gas containing both boron and nitrogen elements is used, but such a gas This is based on the new finding that when oxygen atoms and carbon atoms are present as constituent elements or are contained as impurities, they are involved as inhibitors of BN production.
ホウ素原子と酸素原子は非常に反応し品い系であシ、本
発明に係る製法の反応系に酸素原子が混入しているとホ
ウ素原子の一部が酸素原子と結合して酸化ホウ素が生成
し、これがＰＢＮ −？ ＨＥＮの気相成長を阻害した
シ、ＰＢＮ −？ ＨＢＮの結晶粒界に酸化ホウ素が取
シ込まれて膜の安定性を欠く原因となシ、高純度且つ緻
密な膜が形成できないことが判った。Boron atoms and oxygen atoms are very reactive and have a high quality system.If oxygen atoms are mixed in the reaction system of the production method according to the present invention, some of the boron atoms will combine with oxygen atoms to produce boron oxide. And this is PBN-? PBN-? Which inhibited the vapor phase growth of HEN? It has been found that boron oxide is incorporated into the grain boundaries of HBN and causes the film to lack stability, making it impossible to form a highly pure and dense film.
同様に炭素原子もホウ素原子と非常に反応し易い系であ
り、ＰＢＮ −？ ＥＩＢＮの気相成長を阻害したシ、
炭化ホウ素として取シ込まれて高純度且つ緻密々膜が形
成できないことが判った。Similarly, carbon atoms are also highly reactive with boron atoms, and PBN -? which inhibited the vapor phase growth of EIBN,
It was found that a highly pure and dense film could not be formed due to the incorporation of boron carbide.
更に本発明によれば、ＰＢＮ −？ ＨＢＮが生成され
る基体の温度を設定するのが望ましい。基体温度が１４
００℃を越えると反応室の壁材からその構成ガスが放出
し易くなシ、該ガスがＢＮ膜の形成に伴って混入して高
純度のＢＮ膜が得られない。基体温度が４００℃未満で
あれば非晶質ＢＮが形成され易くなる。従って、この基
体温度は４００〜１４００℃、好適には７００〜１３０
０℃に設定すればよい。Further according to the invention, PBN-? It is desirable to set the temperature of the substrate at which HBN is produced. Substrate temperature is 14
If the temperature exceeds 00° C., the constituent gas is likely to be released from the wall material of the reaction chamber, and the gas is mixed in with the formation of the BN film, making it impossible to obtain a high-purity BN film. If the substrate temperature is less than 400° C., amorphous BN is likely to be formed. Therefore, the temperature of this substrate is 400 to 1400°C, preferably 700 to 130°C.
It is sufficient to set the temperature to 0°C.
本発明においては減圧下で成膜するに際して反応室にＢ
Ｎ生成用ガスを導入する前に反応室内部を脱気して真空
度を大きくする必要がある。本発明者は種々の実験を繰
９返し行なった結果、この真空度が小さいと反応室の内
部壁面に吸着するＨｚｏ、ＣＯ２、有機物が多くなシ、
これらはＢＮ膜の成膜に伴って遊離して不純物又は阻害
要因として作用することが判った。本発明者はこの到達
真空度をＩ Ｘ １０ Ｗｍ Ｅ陪以下に制御すれば
よいことを見い出した。In the present invention, when forming a film under reduced pressure, B
Before introducing the N-generating gas, it is necessary to evacuate the interior of the reaction chamber to increase the degree of vacuum. As a result of conducting various experiments nine times, the present inventor found that when the degree of vacuum is low, a large amount of Hzo, CO2, and organic substances are adsorbed on the inner wall of the reaction chamber.
It has been found that these are liberated as the BN film is formed and act as impurities or inhibiting factors. The inventors have found that it is sufficient to control the ultimate degree of vacuum to less than I x 10 WmE.
上述の通シ、酸素原子及び炭素原子の混入量を前述した
レベルに抑制するためＢＮ生成用ガスとして酸素原子や
炭素原子の混入の著しく少ない精製原料を使用し、且つ
反応室の減圧の程度を高める手段が採用される。As mentioned above, in order to suppress the amount of mixed oxygen atoms and carbon atoms to the above-mentioned level, a purified raw material containing significantly less mixed oxygen atoms and carbon atoms is used as the BN generation gas, and the degree of pressure reduction in the reaction chamber is reduced. Measures to increase this will be adopted.
尚、本発明の実施例においてはＢＮ生成用ガスにＮＥ（
３ガス、ＢＣｌ３ガヌ及びＨ２ガスを用いたが、他の原
料ガス、例えばＮＦＩｓ −ＢｚＨｓ系ガス、ｆ３ｚＱ
ｓ−ＮＦｌｓ系ガス、Ｂｔｕｓ −Ｃ−Ｎｚ系ガスにつ
いても本発明が適用できると考えられる。In addition, in the embodiment of the present invention, NE (
3 gas, BCl3Ganu and H2 gas, but other source gases such as NFIs-BzHs-based gas, f3zQ
It is considered that the present invention is also applicable to s-NFls-based gases and Btus-C-Nz-based gases.
次に本発明の実施例を述べる。Next, examples of the present invention will be described.
〔実施例１〕
反応室としての石英管の外側に高周波電流用コイ〜を４
回巻に形成し、その内部には７００℃の温度に設定しで
ある８１基体を設置した。[Example 1] Four high-frequency current coils were placed outside the quartz tube as a reaction chamber.
It was formed into a spiral roll, and an 81 base body set at a temperature of 700° C. was installed inside it.
反応室の到達真空度を１０ ’ｒｏｒｒに設定すると
共に高周波プラズマＣＶＤ法に基いて該コイルに１３゜
５６ ＭＨｚの高周波電流を流した。次いでＮＨＳガス
、ＢＣＩガス及びＨ２ガスをそれぞれ２ ｍｌ ／ ｓ
ｅａ 、 ０．５ｍｌ ／ ｓｅｃ及び２ｍｌ／ＢｅＣ
の流量で反応室へ導入して全ガス圧をα２ ’ｒｏｒｒ
に設定した。The ultimate vacuum of the reaction chamber was set to 10'rorr, and a high frequency current of 13°56 MHz was passed through the coil based on the high frequency plasma CVD method. Then NHS gas, BCI gas and H2 gas at 2 ml/s each
ea, 0.5ml/sec and 2ml/BeC
is introduced into the reaction chamber at a flow rate of α2'rorr to increase the total gas pressure.
It was set to
とのＢＮ生成用ガスはいずれのガスについても酸素ガス
及び水蒸気の混入量が１ ｐｐｍ以下、炭素ガヌ濃１９
１ｐｐｍ以下の高純度ガスを用いた。All of the gases used for BN generation have a mixed content of oxygen gas and water vapor of 1 ppm or less, and a carbon concentration of 19%.
High purity gas of 1 ppm or less was used.
かくして８１基体表面に１時間成膜したところ厚み１４
μｍの膜を形成した。そしてこの膜をＸ線ディフライト
メーター法によシ測定したところＰＢＮ及びＨＢＮが生
成していることが確認できた。When the film was formed on the surface of the 81 substrate for 1 hour, the thickness was 14.
A μm film was formed. When this film was measured using an X-ray diffrite meter method, it was confirmed that PBN and HBN were produced.
〔実施例２〕
実施例１において、Ｎｚガスをキャリアーガスとしｃｏ
！ガスが４００ ｐｐｍ加えられた阻害要因ガスを第１
表に示す通シに反応室に導入して膜生成速度及び膜安定
性を測ったところ、第１表に示す結果が得られた。[Example 2] In Example 1, Nz gas was used as a carrier gas and co
! The first inhibitor gas was added at 400 ppm.
When the membrane formation rate and membrane stability were measured by introducing the mixture into the reaction chamber as shown in the table, the results shown in Table 1 were obtained.
尚、膜安定性は本実施例で得られた試料をＡ！″気流中
ＳＯＯ℃で２時間加熱して重量の減少比率を求めてその
指標とした。The membrane stability of the sample obtained in this example was A! ``Heating at SOO°C in an air stream for 2 hours, the weight reduction ratio was determined and used as an index.
第１表 ・印の試料は本発明の範囲外のものである。Table 1 - Samples marked with are outside the scope of the present invention.
第１表よシ明らかな通シ、本発明の試料黒１乃至５につ
いては高純度且つ緻密なＰＢＮ及びＨＢＮが亮い生成速
度で形成できる。又、阻害要因ガスの導入量が小さくな
るのに伴って高純度且つ緻密なＰＢＮ 、 ＨＢＮ ｇ
が高い生成速度でもって形成できた。As is clear from Table 1, in Samples Black 1 to 5 of the present invention, highly pure and dense PBN and HBN can be formed at a high production rate. In addition, as the amount of inhibiting gas introduced becomes smaller, high purity and dense PBN, HBN g
could be formed with a high production rate.
〔実施例３〕
実施例１において、 ユ基体の設定温度を第２表に示す
通りにしてＢＮ膜の結晶状態及び膜成長速度、並びにヲ
ザフオードの後方散乱法によシ膜中の不純物の有無を測
定した。[Example 3] In Example 1, the crystalline state and film growth rate of the BN film, as well as the presence or absence of impurities in the film, were determined using the Ozafoord backscattering method using the set temperature of the substrate as shown in Table 2. It was measured.
第２表
第２１表よシ明らかな通シ、基体温度が１４００ ’Ｃ
以下に設定された試料４１０乃至１４においては膜中に
不純物が全く検出されなかった。又、基体温度が４００
℃未満に設定された試料黒１４においては非晶質ＢＮが
形成されたにすぎなかった。It is clear from Table 2 and Table 21 that the substrate temperature is 1400'C.
In samples 410 to 14 set below, no impurities were detected in the films. Also, the substrate temperature is 400
In sample black 14, which was set at a temperature below .degree. C., only amorphous BN was formed.
〔実施例４〕
実施例１において、反応室の到達真空度を第８表に示す
通り幾通りにも設定して１時間成膜し、膜生成速度及び
膜安定性を測定した。[Example 4] In Example 1, the ultimate vacuum degree of the reaction chamber was set in various ways as shown in Table 8 to form a film for 1 hour, and the film formation rate and film stability were measured.
第８表より明らかな通り、到達真空度が１×１０ｍｍ
Ｅ（ｇを越える試料ム１７乃至１９においては膜生成速
度が小さくなシ、膜の純度及び緻密性も劣る傾向にある
。As is clear from Table 8, the ultimate vacuum level is 1 x 10 mm.
In samples 17 to 19 in which the weight exceeds E(g), the film formation rate is low, and the purity and density of the film tend to be poor.
〔実施例５〕
実施例１において、８１基体の温度をｓｏｏ’ｃに設定
し、更にＮ２ガスをキャリアーガスとしＯ２ガスが４０
０ ｐｐｍ加えられた阻害要因ガスを第４表に示す通υ
に反応室に導入して膜生成速度及び膜安定性を測定した
。[Example 5] In Example 1, the temperature of the 81 substrate was set to soo'c, and further, N2 gas was used as a carrier gas, and O2 gas was
0 ppm added inhibitory gas as shown in Table 4
was introduced into the reaction chamber to measure the film formation rate and film stability.
・印の試料は本発明の範囲外のものである第４表より明
らかな通り、本発明の試料五２０乃至２４については高
純度且つ緻密なＰＢＮ及びＨＢＮが高い生成速度で形成
できる。The samples marked with * are outside the scope of the present invention.As is clear from Table 4, highly pure and dense PBN and HBN can be formed at a high production rate for Samples 520 to 24 of the present invention.
〔実施例６〕
実施例１において、 ８１基体の温度を８００℃に設定
し、更に■２ガスをキャリアーガスとしＣＦ１ａガスを
１０容量％含む阻害要因ガスを第６表に示す通シに反応
室に導入して膜生成速度及び膜安定性を測定した。[Example 6] In Example 1, the temperature of the 81 substrate was set at 800°C, and furthermore, the reaction chamber was heated using the 2 gas as a carrier gas and the inhibiting gas containing 10% by volume of CF1a gas as shown in Table 6. The film formation rate and film stability were measured.
・印の試料は本発明の範囲外のものである第５表よシ明
らかな通シ、本発明の試料＆２７乃至８１については高
純度且つ緻密なＰＢＮ及びＥ（ＢＮが高い生成速度で形
成できる。The samples marked with ・ are outside the scope of the present invention. It is clear from Table 5 that samples &27 to 81 of the present invention have high purity and dense PBN and E (BN can be formed at a high production rate). .
上述した通夛、本発明によれば酸素原子や炭素原子がＢ
Ｎ生成の阻害要因になることが判シその合計量を反応室
内部にて１００ ｐｐｍ以下に制御することが重要であ
る。これにより、高純度且つ緻密なＰＢＮ −？ Ｅｍ
Ｎを高い膜生成速度で形成でき、その結果、ＢＮ自体の
有する高熱伝導性、耐熱衝撃性、電気的絶縁性、化学的
安定性、耐酸化性及び自己潤滑性を更に向上せしめるこ
とができる。加えて生産性を高めて高品質ＢＮ膜を低コ
ストで供給できるという利点も有する。As mentioned above, according to the present invention, oxygen atoms and carbon atoms are
It is important to control the total amount within the reaction chamber to 100 ppm or less since it is likely to become an inhibiting factor for N production. As a result, highly pure and dense PBN-? Em
N can be formed at a high rate of film formation, and as a result, the high thermal conductivity, thermal shock resistance, electrical insulation, chemical stability, oxidation resistance, and self-lubricating properties of BN itself can be further improved. In addition, it also has the advantage of increasing productivity and supplying high quality BN films at low cost.
Claims (4)
用ガスを導入して気相反応法により該基体表面上に熱分
解窒化ホウ素又は六方晶窒化ホウ素を生成させる製法に
おいて、該反応室内部の酸素原子及び炭素原子の合計量
が１００ｐｐｍ以下となるように制御したことを特徴と
する窒化ホウ素膜の製造方法。(1) In a manufacturing method in which a boron nitride generating gas is introduced into a reaction chamber in which a substrate is installed and pyrolytic boron nitride or hexagonal boron nitride is generated on the surface of the substrate by a gas phase reaction method, the reaction chamber A method for producing a boron nitride film, characterized in that the total amount of internal oxygen atoms and carbon atoms is controlled to be 100 ppm or less.
設定したことを特徴とする特許請求の範囲第（１）項記
載の窒化ホウ素膜の製造方法。(2) The method for manufacturing a boron nitride film according to claim (1), wherein the temperature of the substrate is set within a range of 400 to 1400°C.
設定したことを特徴とする特許請求の範囲第（１）項記
載の窒化ホウ素膜の製造方法。(3) The method for manufacturing a boron nitride film according to claim (1), wherein the temperature of the substrate is set within a range of 700 to 1300°C.
の該反応内部の到達真空度を１×１０＾−＾５ｍｍＨｇ
以下に制御したことを特徴とする特許請求の範囲第（１
）項記載の窒化ホウ素膜の製造方法。(4) The ultimate vacuum inside the reaction chamber before introducing the boron nitride generating gas into the reaction chamber is 1 x 10^-^5 mmHg.
Claim No. 1 (1) characterized by the following control:
) The method for manufacturing a boron nitride film described in item 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1906785A JPS61177372A (en) | 1985-01-31 | 1985-01-31 | Production of boron nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1906785A JPS61177372A (en) | 1985-01-31 | 1985-01-31 | Production of boron nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61177372A true JPS61177372A (en) | 1986-08-09 |
Family
ID=11989082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1906785A Pending JPS61177372A (en) | 1985-01-31 | 1985-01-31 | Production of boron nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61177372A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT387988B (en) * | 1987-08-31 | 1989-04-10 | Plansee Tizit Gmbh | METHOD FOR PRODUCING MULTI-LAYER COATED HARD METAL PARTS |
| JP2021020848A (en) * | 2016-05-12 | 2021-02-18 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | Direct formation of hexagonal boron nitride on silicon based dielectric |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5547379A (en) * | 1978-10-02 | 1980-04-03 | Takehiko Takahashi | Manufacture of boron nitride coated film by chemical vapor deposition |
-
1985
- 1985-01-31 JP JP1906785A patent/JPS61177372A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5547379A (en) * | 1978-10-02 | 1980-04-03 | Takehiko Takahashi | Manufacture of boron nitride coated film by chemical vapor deposition |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT387988B (en) * | 1987-08-31 | 1989-04-10 | Plansee Tizit Gmbh | METHOD FOR PRODUCING MULTI-LAYER COATED HARD METAL PARTS |
| US4895770A (en) * | 1987-08-31 | 1990-01-23 | Schwarzkopf Development Corporation | Process for the manufacture of multi-layered, coated hardmetal parts |
| JP2021020848A (en) * | 2016-05-12 | 2021-02-18 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | Direct formation of hexagonal boron nitride on silicon based dielectric |
| US11276759B2 (en) | 2016-05-12 | 2022-03-15 | Globalwafers Co., Ltd. | Direct formation of hexagonal boron nitride on silicon based dielectrics |
| US11289577B2 (en) | 2016-05-12 | 2022-03-29 | Globalwafers Co., Ltd. | Direct formation of hexagonal boron nitride on silicon based dielectrics |
| JP2022121422A (en) * | 2016-05-12 | 2022-08-19 | グローバルウェーハズ カンパニー リミテッド | Direct formation of hexagonal boron nitride on silicon based dielectrics |
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