TW202119464A - Plasma system - Google Patents

Plasma system Download PDF

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TW202119464A
TW202119464A TW109137114A TW109137114A TW202119464A TW 202119464 A TW202119464 A TW 202119464A TW 109137114 A TW109137114 A TW 109137114A TW 109137114 A TW109137114 A TW 109137114A TW 202119464 A TW202119464 A TW 202119464A
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gas
air inlet
workpiece
electrode assembly
lower electrode
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TW109137114A
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TWI811578B (en
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簡師節
崔詠琴
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大陸商北京北方華創微電子裝備有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Glass Compositions (AREA)

Abstract

A plasma system including a chamber and a lower electrode assembly is disclosed. The chamber includes a first intake path and an exhaust path. A first gas enters the first intake path, and is discharged through the exhaust path. The lower electrode assembly is located in the chamber and under the first intake path to carry a workpiece to be processed. A second intake path is set on one side wall of the lower electrode assembly, and a second gas enters the second intake path, wherein the direction of one outlet of the second intake path is at a preset angle to the vertical direction. The plasma system disclosed in the present invention changes the gas flow rate through the edge area of the workpiece by setting a gas path in the lower electrode assembly, thereby changing the etching rate of the edge area of the workpiece to be processed, so as to improve the uniformity of the etching of the workpiece to be processed.

Description

等離子體系統Plasma system

本發明涉及半導體加工技術領域，詳細來說，是有關一種對晶圓進行加工的等離子體系統。The present invention relates to the technical field of semiconductor processing, and in detail, to a plasma system for processing wafers.

當使用等離子體對工件（如晶圓）進行加工時，舉例來說，對工件進行蝕刻加工時，工件置於等離子體系統的下部電極上，反應氣體自工件上方通入腔室中並被激發為等離子體，然後與工件表面進行反應以蝕刻工件。在加工過程中，反應氣體以朝向工件的上表面的方向被通入腔室，對工件進行蝕刻後從工件的另一側（例如下表面下方）被抽出腔室。但在腔室內的氣體被抽出腔室的過程中，工件邊緣區域由於較工件中心區域更靠近抽氣通路，工件邊緣區域的氣體流速相較於與工件中心區域的氣體流速快，導致工件邊緣區域的蝕刻速率較中心區域的蝕刻速率快，造成工件蝕刻的均勻性不佳。When plasma is used to process a workpiece (such as a wafer), for example, when the workpiece is etched, the workpiece is placed on the lower electrode of the plasma system, and the reactive gas is introduced into the chamber from above the workpiece and is excited It is a plasma, and then reacts with the surface of the workpiece to etch the workpiece. During the processing, the reaction gas is introduced into the chamber in a direction toward the upper surface of the workpiece, and the workpiece is etched out of the chamber from the other side of the workpiece (for example, below the lower surface). However, when the gas in the chamber is being pumped out of the chamber, the edge area of the workpiece is closer to the exhaust passage than the center area of the workpiece, and the gas flow rate in the edge area of the workpiece is faster than that in the center area of the workpiece, resulting in the edge area of the workpiece. The etching rate is faster than the etching rate in the central area, resulting in poor etching uniformity of the workpiece.

本發明公開了一種等離子體系統，以提高等離子體對於工件（如晶圓）蝕刻的均勻性。The invention discloses a plasma system to improve the uniformity of plasma etching of workpieces (such as wafers).

依據本發明的一實施例，揭露一種等離子體系統，用於通過等離子體對一工件進行加工。該等離子體系統包括一腔室及一下電極組件。該腔室包括一第一進氣通路與一抽氣通路，該第一進氣通路用於通入一第一氣體，該抽氣通路用於排出該第一氣體。該下電極組件設置於該腔室中用於承載一待加工工件，且該下電極組件位於該第一進氣通路下方。該下電極組件的一側壁上設置有一第二進氣通路，該第二進氣通路用於通入一第二氣體，其中，該第二進氣通路的一出口的朝向與垂直方向呈一預設角度。According to an embodiment of the present invention, a plasma system is disclosed for processing a workpiece through plasma. The plasma system includes a chamber and a lower electrode assembly. The chamber includes a first air inlet passage and a suction passage. The first air inlet passage is used to pass in a first gas, and the suction passage is used to discharge the first gas. The lower electrode assembly is arranged in the chamber for carrying a workpiece to be processed, and the lower electrode assembly is located under the first air inlet passage. A second air inlet passage is provided on a side wall of the lower electrode assembly, and the second air inlet passage is used to pass in a second gas, wherein the direction of an outlet of the second air inlet passage is in the same direction as the vertical direction. Set the angle.

依據本發明的一實施例，該預設角度為45-135度。According to an embodiment of the present invention, the predetermined angle is 45-135 degrees.

依據本發明的一實施例，該第二進氣通路的該出口的朝向與該垂直方向垂直。According to an embodiment of the present invention, the direction of the outlet of the second air intake passage is perpendicular to the vertical direction.

依據本發明的一實施例，該第二進氣通路的該出口與該下電極組件上表面的距離為5-100毫米（mm）。According to an embodiment of the present invention, the distance between the outlet of the second air intake passage and the upper surface of the lower electrode assembly is 5-100 millimeters (mm).

依據本發明的一實施例，該第二進氣通路包括：相對該下電極組件的中心呈現對稱分佈的多個進氣孔。According to an embodiment of the present invention, the second air intake passage includes a plurality of air intake holes symmetrically distributed with respect to the center of the lower electrode assembly.

依據本發明的一實施例，該第二進氣通路包括：沿該下電極組件周向設置的一進氣槽。According to an embodiment of the present invention, the second air inlet passage includes: an air inlet groove arranged along the circumference of the lower electrode assembly.

依據本發明的一實施例，該等離子體系統還包括一進氣管道，該進氣管道設置於該下電極組件中，具有一放射狀結構，其進氣端與該第二氣體的氣源連通，其出氣端與該第二進氣通路連通。According to an embodiment of the present invention, the plasma system further includes an air inlet pipe disposed in the lower electrode assembly, having a radial structure, and the air inlet end of the air inlet communicating with the gas source of the second gas , Its outlet end is in communication with the second air inlet passage.

依據本發明的一實施例，該下電極組件包括：沿垂直方向自上向下依次設置的一聚焦環、一基環及一絕緣環，該聚焦環、該基環、該絕緣環的側壁至少形成該下電極組件的部分該側壁。According to an embodiment of the present invention, the lower electrode assembly includes: a focus ring, a base ring, and an insulating ring sequentially arranged from top to bottom along a vertical direction. The focus ring, the base ring, and the sidewalls of the insulating ring are at least Part of the side wall of the lower electrode assembly is formed.

依據本發明的一實施例，該第二進氣通路設置於該聚焦環、該基環、該絕緣環中的一個或多個上。According to an embodiment of the present invention, the second air inlet passage is disposed on one or more of the focusing ring, the base ring, and the insulating ring.

依據本發明的一實施例，該第二進氣通路設置於該聚焦環和該基環之間，包括開設在該基環上表面上相對該基環的中心呈現放射狀且對稱分佈的多個線型進氣槽，或開設在該基環上表面邊緣處沿基環周向開設的環型進氣槽，該聚焦環覆蓋在該基環上，從而形成該第二進氣通路。According to an embodiment of the present invention, the second air intake passage is disposed between the focusing ring and the base ring, and includes a plurality of radially and symmetrically distributed channels that are arranged on the upper surface of the base ring and are radially and symmetrically distributed relative to the center of the base ring. A linear air inlet groove, or a ring-shaped air inlet groove opened at the edge of the upper surface of the base ring along the circumference of the base ring, the focusing ring covers the base ring, thereby forming the second air inlet passage.

依據本發明的一實施例，該下電極組件還包括：一靜電盤及一接口盤；該靜電盤被該聚焦環與該基環環繞，該靜電盤的上表面用於承載該待加工工件；該接口盤設置於該靜電盤下方，該接口盤中設置有一冷卻管道，該冷卻管道與該進氣管道或該第二氣體的氣源連通，用於向該待加工工件的一下表面通入該第二氣體，以對加工中的該待加工工件進行降溫。According to an embodiment of the present invention, the lower electrode assembly further includes: an electrostatic disc and an interface disc; the electrostatic disc is surrounded by the focus ring and the base ring, and the upper surface of the electrostatic disc is used to carry the workpiece to be processed; The interface plate is arranged under the electrostatic plate, and a cooling pipe is arranged in the interface plate. The cooling pipe is in communication with the air inlet pipe or the gas source of the second gas, and is used to pass into the lower surface of the workpiece to be processed. The second gas is used to cool the workpiece to be processed during processing.

依據本發明的一實施例，該下電極組件還包括：一靜電盤及一接口盤；該靜電盤被該聚焦環與該基環圍繞，該靜電盤的一上表面用於承載該待加工工件；該接口盤設置於該靜電盤下方，該接口盤中設置有一冷卻管道，該冷卻管道用於向該待加工工件的一下表面通入第三氣體，以對加工中的待加工工件進行降溫。According to an embodiment of the present invention, the lower electrode assembly further includes: an electrostatic disc and an interface disc; the electrostatic disc is surrounded by the focus ring and the base ring, and an upper surface of the electrostatic disc is used to carry the workpiece to be processed The interface plate is arranged below the electrostatic plate, and a cooling pipe is arranged in the interface plate, and the cooling pipe is used to pass a third gas to the lower surface of the workpiece to be processed to cool the workpiece to be processed during processing.

依據本發明的一實施例，該第一氣體是用於對該待加工工件進行蝕刻的蝕刻氣體，該第二氣體包括一或多種惰性氣體。According to an embodiment of the present invention, the first gas is an etching gas used to etch the workpiece to be processed, and the second gas includes one or more inert gases.

本發明所公開的等離子體系統，通過設置於下電極組件中的氣體通路來改變流經工件邊緣區域的氣體流速，進而改變工件邊緣區域的蝕刻速率，以提高工件蝕刻的均勻性。The plasma system disclosed in the present invention changes the gas flow rate flowing through the edge area of the workpiece through the gas passage provided in the lower electrode assembly, thereby changing the etching rate of the edge region of the workpiece, so as to improve the uniformity of the workpiece etching.

以下揭露提供用於實施本揭露之不同構件之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露。當然，此等僅為實例且非意欲限制。舉例而言，在以下描述中之一第一構件形成於一第二構件上方或上可包含其中該第一構件及該第二構件經形成為直接接觸之實施例，且亦可包含其中額外構件可形成在該第一構件與該第二構件之間，使得該第一構件及該第二構件可不直接接觸之實施例。另外，本揭露可在各個實例中重複參考數字及/或字母。此重複出於簡化及清楚之目的且本身不指示所論述之各個實施例及/或組態之間的關係。The following disclosure provides many different embodiments or examples of different components for implementing the disclosure. Specific examples of components and configurations are described below to simplify the disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description, a first member formed on or on a second member may include an embodiment in which the first member and the second member are formed in direct contact, and may also include additional members therein An embodiment that can be formed between the first member and the second member so that the first member and the second member may not directly contact. In addition, the present disclosure may repeat reference numbers and/or letters in each example. This repetition is for the purpose of simplification and clarity and does not in itself indicate the relationship between the various embodiments and/or configurations discussed.

此外，為便於描述，諸如「下面」、「下方」、「下」、「上方」、「上」及類似者之空間相對術語可在本文中用於描述一個元件或構件與另一(些)元件或構件之關係，如圖中圖解說明。空間相對術語意欲涵蓋除在圖中描繪之定向以外之使用或操作中之裝置之不同定向。設備可以其他方式定向(旋轉90度或按其他定向)且因此可同樣解釋本文中使用之空間相對描述詞。In addition, for ease of description, spatially relative terms such as "below", "below", "below", "above", "upper" and the like can be used herein to describe one element or component and another(s) The relationship between components or components is illustrated in the figure. Spatial relative terms are intended to cover different orientations of devices in use or operation other than those depicted in the figures. The device can be oriented in other ways (rotated by 90 degrees or in other orientations) and therefore the spatial relative descriptors used in this article can also be interpreted.

儘管陳述本揭露之寬泛範疇之數值範圍及參數係近似值，然儘可能精確地報告特定實例中陳述之數值。然而，任何數值固有地含有必然由於見於各自測試量測中之標準偏差所致之某些誤差。再者，如本文中使用，術語「大約」通常意謂在一給定值或範圍之10%、5%、1%或0.5%內。替代地，術語「大約」意謂在由此項技術之一般技術者考量時處於平均值之一可接受標準誤差內。除在操作/工作實例中以外，或除非以其他方式明確指定，否則諸如針對本文中揭露之材料之數量、時間之持續時間、溫度、操作條件、數量之比率及其類似者之全部數值範圍、數量、值及百分比應被理解為在全部例項中由術語「大約」修飾。相應地，除非相反地指示，否則本揭露及隨附發明申請專利範圍中陳述之數值參數係可根據需要變化之近似值。至少，應至少鑑於所報告有效數位之數目且藉由應用普通捨入技術解釋各數值參數。範圍可在本文中表達為從一個端點至另一端點或在兩個端點之間。本文中揭露之全部範圍包含端點，除非另有指定。Although the numerical ranges and parameters stated in the broad scope of this disclosure are approximate values, the numerical values stated in the specific examples should be reported as accurately as possible. However, any value inherently contains certain errors inevitably due to the standard deviation seen in the respective test measurement. Furthermore, as used herein, the term "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "approximately" means within one acceptable standard error of the mean when considered by a general technician of the technology. Except in the operation/working example, or unless explicitly specified in other ways, such as the total numerical range of the quantity of materials disclosed in this article, the duration of time, temperature, operating conditions, the ratio of quantities and the like, Quantities, values and percentages should be understood as modified by the term "about" in all examples. Correspondingly, unless otherwise indicated, the numerical parameters stated in the scope of this disclosure and the accompanying invention application are approximate values that can be changed as needed. At the very least, each numerical parameter should be explained at least in view of the number of significant digits reported and by applying ordinary rounding techniques. Ranges can be expressed herein as from one endpoint to the other or between two endpoints. All ranges disclosed herein include endpoints, unless otherwise specified.

當使用等離子體對工件（如晶圓）進行加工時，舉例來說，對工件進行蝕刻加工時，工件置於等離子體系統的下部電極上，等離子體自工件上方通入腔室中與工件表面進行反應以蝕刻工件。經過發明人長時間的觀察與研究，發現腔室中等離子體的流動方向與流速會對蝕刻的均勻性造成很大的影響。例如，為了能有效蝕刻工件上表面，等離子體需要接觸工件的上表面，因此設置將等離子體以朝向工件的上表面的方向被通入腔室，且從工件的另一側（例如下表面下方）被抽出腔室，以使等離子體流暢地流動於腔室中以提高蝕刻效率。但在等離子體被抽出腔室的過程中，工件邊緣區域的等離子體由於較工件中心區域的等離子體更靠近抽氣通路，等離子體於工件邊緣區域的流速相較於與工件中心區域的流速快，導致工件邊緣區域的蝕刻速率較中心區域的蝕刻速率快，造成工件蝕刻的均勻性不佳。即使改變等離子體進入腔室的方向與速度，仍無法有效改善工件不同區域的蝕刻速度的差異問題。因此，本發明公開一種等離子體系統用以改善上述技術問題。When using plasma to process a workpiece (such as a wafer), for example, when etching a workpiece, the workpiece is placed on the lower electrode of the plasma system, and the plasma passes from above the workpiece into the chamber and the surface of the workpiece The reaction is carried out to etch the workpiece. After a long period of observation and research, the inventor found that the flow direction and flow rate of the plasma in the chamber have a great influence on the uniformity of etching. For example, in order to effectively etch the upper surface of the workpiece, the plasma needs to contact the upper surface of the workpiece. Therefore, it is set to pass the plasma into the chamber in a direction toward the upper surface of the workpiece, and from the other side of the workpiece (for example, below the lower surface). ) Is drawn out of the chamber to make the plasma flow smoothly in the chamber to improve etching efficiency. However, when the plasma is drawn out of the chamber, since the plasma at the edge of the workpiece is closer to the pumping path than the plasma at the center of the workpiece, the flow velocity of the plasma at the edge of the workpiece is faster than that at the center of the workpiece. , Resulting in a faster etching rate in the edge area of the workpiece than in the center area, resulting in poor uniformity of the workpiece etching. Even if the direction and speed of the plasma entering the chamber are changed, the problem of the difference in etching speeds in different areas of the workpiece cannot be effectively improved. Therefore, the present invention discloses a plasma system to improve the above technical problems.

圖1是依據本發明實施例的系統10的示意圖。在本實施例中，系統10是一種等離子體系統，用於通過等離子體對待加工工件SB（如晶圓或是半導體基板）進行加工。舉例來說，系統10可以是一種蝕刻裝置，採用反應氣體電離後產生的等離子體對待加工工件SB進行蝕刻製程。如圖1所示，系統10至少包括腔室11以及下電極組件12。腔室11包括第一進氣通路111與排氣通路112，第一進氣通路111用於通入第一氣體（如反應氣體），抽氣通路112用於排出腔室11內的氣體。第一氣體經由第一進氣通路111被通入腔室11中，在進行了製程後經由排氣通路112被抽離腔室11。在一些實施例中，第一氣體包括Cl2 、SF6 、C4 F8 、O2 、及/或其他可適合用於蝕刻待加工工件SB表面材料的氣體。Fig. 1 is a schematic diagram of a system 10 according to an embodiment of the present invention. In this embodiment, the system 10 is a plasma system for processing the workpiece SB (such as a wafer or a semiconductor substrate) to be processed by plasma. For example, the system 10 may be an etching device that uses plasma generated after ionization of a reactive gas to perform an etching process on the workpiece SB to be processed. As shown in FIG. 1, the system 10 at least includes a chamber 11 and a lower electrode assembly 12. The chamber 11 includes a first intake passage 111 and an exhaust passage 112. The first intake passage 111 is used to pass in a first gas (such as a reaction gas), and the exhaust passage 112 is used to exhaust the gas in the chamber 11. The first gas is introduced into the chamber 11 through the first intake passage 111, and is drawn out of the chamber 11 through the exhaust passage 112 after the manufacturing process. In some embodiments, the first gas includes Cl 2 , SF 6 , C 4 F 8 , O 2 , and/or other gases suitable for etching the surface material of the workpiece SB to be processed.

下電極組件12設置於腔室11中、第一進氣通路111下方、抽氣通路112上方，用以承載待加工工件SB。詳細來說，下電極組件12設置於第一進氣通路111與抽氣通路112之間，使第一氣體經由第一進氣通路111朝向待加工工件SB上表面進入腔室11，在進行了製程後流經下電極組件12側壁由下電極組件12下方的抽氣通路112排出。下電極組件12的側壁上設置有第二進氣通路O1，用於通入第二氣體，以自下電極組件12側壁向腔室11內排出第二氣體。The lower electrode assembly 12 is arranged in the chamber 11, below the first air inlet passage 111, and above the air extraction passage 112, for carrying the workpiece SB to be processed. In detail, the lower electrode assembly 12 is disposed between the first air inlet passage 111 and the air extraction passage 112, so that the first gas enters the chamber 11 through the first air inlet passage 111 toward the upper surface of the workpiece SB to be processed. After the manufacturing process, the flow through the sidewall of the lower electrode assembly 12 is discharged from the exhaust passage 112 under the lower electrode assembly 12. A second gas inlet passage O1 is provided on the side wall of the lower electrode assembly 12 for introducing the second gas to discharge the second gas from the side wall of the lower electrode assembly 12 into the chamber 11.

在一些實施例中，第二氣體包括惰性氣體（如He）或是其他不影響蝕刻待加工工件SB表面材料的氣體。在一些實施例中，第二氣體與第一氣體相同，例如包括Cl2 、SF6 、C4 F8 、O2 、及/或其他可適合用於蝕刻待加工工件SB表面材料的氣體。第二進氣通路O1的出口朝向與垂直方向呈預設角度，因此，當待加工工件SB進行加工時，第二氣體會以與第一氣體不同的流向通入腔室11中，用以調整或改變腔室11中至少部分第一氣體的流速與流向，進而達到改善待加工工件SB中心區域與邊緣區域蝕刻均勻性的功效。下電極組件12的詳細結構將於後續搭配附圖進行說明。In some embodiments, the second gas includes an inert gas (such as He) or other gas that does not affect the surface material of the workpiece SB to be etched. In some embodiments, the second gas is the same as the first gas, for example, including Cl 2 , SF 6 , C 4 F 8 , O 2 , and/or other gases suitable for etching the surface material of the workpiece SB to be processed. The outlet direction of the second air inlet passage O1 is at a predetermined angle to the vertical. Therefore, when the workpiece SB to be processed is processed, the second gas will flow into the chamber 11 in a different flow direction from the first gas for adjustment Or change the flow rate and flow direction of at least part of the first gas in the chamber 11, thereby achieving the effect of improving the etching uniformity of the center area and the edge area of the workpiece SB to be processed. The detailed structure of the lower electrode assembly 12 will be described later with accompanying drawings.

在圖1所示的實施例中，系統10還包括支撐件13、進氣元件14及抽氣元件15。支撐件13與下電極組件12連接以支撐下電極組件12於腔室11中，同時提供通路使電路線、管線等可自腔室11外連接至下電極組件12。進氣元件14連接於腔室11的第一進氣通路111，用以使第一氣體自下電極組件12的上方通入腔室12中。抽氣元件15連接於腔室11的抽氣通路112，用以將腔室內的氣體自下電極組件12的下方將自腔室12抽出。In the embodiment shown in FIG. 1, the system 10 further includes a support 13, an air intake element 14 and an air extraction element 15. The supporting member 13 is connected to the lower electrode assembly 12 to support the lower electrode assembly 12 in the chamber 11, and at the same time, provides a path so that circuit lines, pipelines, etc. can be connected to the lower electrode assembly 12 from outside the chamber 11. The air inlet element 14 is connected to the first air inlet passage 111 of the chamber 11 to allow the first gas to pass into the chamber 12 from above the lower electrode assembly 12. The pumping element 15 is connected to the pumping passage 112 of the chamber 11 for pumping the gas in the chamber from the bottom of the lower electrode assembly 12 from the chamber 12.

在圖1所示的實施例中，系統10還包括第一泵16及第二泵17。第一泵16連接下電極組件12的第二進氣通路O1，用以將第二氣體通入下電極組件12，使第二氣體經由第二進氣通路O1自下電極組件12的側壁進入腔室11。第二泵17連接下電極組件12的冷卻管道，用以將冷卻氣體通入下電極組件12中、待加工工件SB下方，用以於加工過程中對待加工工件SB進行降溫。在圖1所示的實施例中，第一泵16及第二泵17皆通過支撐件13與第二進氣通路O1以及冷卻管道連通，但本發明不限於此。再者，雖然圖1所示的系統10包括第一泵16及第二泵17，但本發明其他實施例中可以包括更多或更少的泵，並不限於第一泵16及第二泵17。In the embodiment shown in FIG. 1, the system 10 further includes a first pump 16 and a second pump 17. The first pump 16 is connected to the second air inlet passage O1 of the lower electrode assembly 12 to pass the second gas into the lower electrode assembly 12 so that the second gas enters the cavity from the side wall of the lower electrode assembly 12 through the second air inlet passage O1 Room 11. The second pump 17 is connected to the cooling pipe of the lower electrode assembly 12 to pass cooling gas into the lower electrode assembly 12 below the workpiece SB to be processed for cooling the workpiece SB during processing. In the embodiment shown in FIG. 1, both the first pump 16 and the second pump 17 communicate with the second air inlet passage O1 and the cooling pipe through the support 13, but the present invention is not limited to this. Furthermore, although the system 10 shown in FIG. 1 includes a first pump 16 and a second pump 17, other embodiments of the present invention may include more or fewer pumps, and are not limited to the first pump 16 and the second pump. 17.

本技術領域具有通常知識者應能輕易理解，系統10還可包括其他用於對待加工工件SB（如晶圓）進行加工所需的裝置或元件。舉例來說，系統10包括射頻源、匹配電路及感應線圈，其中射頻源通過匹配電路於感應線圈之上載入射頻功率，感應線圈將射頻功率耦合至腔室11中將第一氣體電離成等離子體，使得系統10通過等離子體對待加工工件SB（如晶圓）進行加工。為求圖示簡潔，圖1僅描述與本發明精神相關的裝置或元件。Those skilled in the art should easily understand that the system 10 may also include other devices or components required for processing the workpiece SB (such as a wafer) to be processed. For example, the system 10 includes a radio frequency source, a matching circuit, and an induction coil. The radio frequency source loads radio frequency power on the induction coil through the matching circuit, and the induction coil couples the radio frequency power into the chamber 11 to ionize the first gas into plasma. This allows the system 10 to process the workpiece SB (such as a wafer) to be processed through plasma. For the sake of simplicity of the illustration, FIG. 1 only describes devices or elements related to the spirit of the present invention.

圖2是依據本發明一實施例，當圖1所示的系統10對待加工工件SB進行加工時的氣體流向示意圖。為容易理解，圖2中僅繪示出部分系統10的部分元件及以及標號，用以簡化附圖的複雜度。且為方便區別，在圖2中第一氣體以實線箭頭表示，且第二氣體以空心箭頭表示，需要注意的是，圖2中的實線箭頭、空心箭頭僅為示意之用，箭頭的粗細、大小、長度不代表氣體的流速或流量的相對關係；另外，箭頭的方向也僅為說明方便之用，並未繪示出所有在第一氣體與第二氣體的交互作用下所產生其他氣體流向或是紊流流向。FIG. 2 is a schematic diagram of the gas flow when the system 10 shown in FIG. 1 processes the workpiece SB to be processed according to an embodiment of the present invention. For ease of understanding, FIG. 2 only depicts some elements and reference numerals of part of the system 10 to simplify the complexity of the drawings. And for the convenience of distinction, in Figure 2 the first gas is represented by a solid arrow, and the second gas is represented by a hollow arrow. It should be noted that the solid arrows and hollow arrows in Figure 2 are for illustrative purposes only. Thickness, size, and length do not represent the relative relationship of gas flow rate or flow rate; in addition, the direction of the arrow is only for illustrative convenience, and it does not show all the other generated by the interaction of the first gas and the second gas. Gas flow direction or turbulent flow direction.

如圖2所示，當待加工工件SB於系統10中進行加工處理時，第一氣體自待加工工件SB正上方的第一進氣通路111進入腔室11，並且在抽氣元件15的工作下，第一氣體在朝向待加工工件SB流動的過程中同時朝向待加工工件SB的邊緣區域擴散，在進行了製程之後沿垂直方向流經下電極組件12的側壁至下電極組件12的下方，朝向抽氣通路112的方向集中並被抽出腔室11。如圖2所示，靠近待加工工件SB邊緣區域的部分的氣體相較於靠近工件SB中心區域的部分的氣體更容易被抽走，因此靠近待加工工件SB邊緣區域的氣體流場速度高於靠近待加工工件SB中心區域的氣體流場速度，導致待加工工件SB邊緣區域的蝕刻速率高於待加工工件SB中心區域的蝕刻速率。As shown in FIG. 2, when the workpiece SB to be processed is processed in the system 10, the first gas enters the chamber 11 from the first air inlet passage 111 directly above the workpiece SB to be processed, and the work of the exhaust element 15 When the first gas flows toward the workpiece SB to be processed, the first gas diffuses toward the edge area of the workpiece SB to be processed at the same time. After the process is performed, the first gas flows through the sidewall of the lower electrode assembly 12 in the vertical direction to below the lower electrode assembly 12. It is concentrated in the direction of the suction passage 112 and is drawn out of the chamber 11. As shown in Figure 2, the gas near the edge area of the workpiece SB to be processed is easier to be pumped away than the gas near the center area of the workpiece SB. Therefore, the gas flow field velocity near the edge area of the workpiece SB to be processed is higher than The gas flow field velocity close to the central area of the workpiece SB to be processed causes the etching rate of the edge area of the workpiece SB to be processed to be higher than the etching rate of the central area of the workpiece SB to be processed.

本發明的第二進氣通路O1設置在下電極組件12的側壁，且其出口的朝向與垂直方向成預設角度，使第二氣體進入腔室11時具有與朝向抽氣通路112流動的第一氣體不同的流向，因此改變靠近待加工工件SB邊緣區域的氣體原本的流向與流速。在第二氣體的影響下，第一氣體靠近待加工工件SB邊緣區域的氣體流場速度改變或是減緩，因而改變待加工工件SB邊緣區域的蝕刻速率，達到提高待加工工件SB中心區域與邊緣區域蝕刻速率均勻性的目的。在圖2所示的實施例中，第二進氣通路O1的出口的朝向與垂直方向垂直，但本發明不限於此。需注意的是，此處第二進氣通路O1的出口指的是氣體離開第二進氣通路O1進入腔室11時的開口，換言之，第二進氣通路O1的出口相對於腔室11而言即為進氣口。後續的段落中，在提及第二進氣通路O1的元部件時，若以「進氣」(例如進氣孔O1a、進氣槽O1b、進氣槽O1c)描述，本技術領域具有通常知識者應能理解此處的「進氣」應是相對於腔室11而言。The second air inlet passage O1 of the present invention is arranged on the side wall of the lower electrode assembly 12, and the direction of its outlet is at a predetermined angle with the vertical direction, so that when the second gas enters the chamber 11, it has a first direction that flows toward the air extraction passage 112. The gas flows in different directions, so the original flow direction and velocity of the gas near the edge area of the workpiece SB to be processed is changed. Under the influence of the second gas, the gas flow velocity of the first gas near the edge area of the workpiece SB to be processed changes or slows down, thus changing the etching rate of the edge area of the workpiece SB to be processed, so as to improve the center area and the edge of the workpiece SB to be processed The purpose of area etch rate uniformity. In the embodiment shown in FIG. 2, the direction of the outlet of the second intake passage O1 is perpendicular to the vertical direction, but the present invention is not limited to this. It should be noted that the outlet of the second intake passage O1 here refers to the opening when the gas leaves the second intake passage O1 and enters the chamber 11. In other words, the exit of the second intake passage O1 is relative to the chamber 11. The word is the air inlet. In the following paragraphs, when referring to the components of the second intake passage O1, if it is described as "intake" (for example, the intake hole O1a, the intake groove O1b, and the intake groove O1c), the technical field has common knowledge One should be able to understand that the "intake" here should be relative to the chamber 11.

為能達到良好的蝕刻均勻性，第二進氣通路O1較佳是平均分佈地或是延續地沿下電極組件12的周向或是側壁設置。圖3、圖4所示分別是依據本發明一實施例所繪製的下電極組件12的側視示意圖及俯視示意圖，第二氣體通路O1包括相對下電極組件12中心C12呈對稱分佈的多個進氣孔O1a。進氣孔O1a的數量可以依據實際狀況與需求進行增減，只要能使待加工工件SB邊緣區域的蝕刻速率平均即可。圖5、圖6所示分別是依據本發明另一實施例所繪製的下電極組件12的側視示意圖及俯視示意圖，第二氣體通路O1包括沿下電極組件12周向設置的開放式環形進氣槽O1b，環形進氣槽O1b的開口連續地延伸於下電極組件12的側壁且環繞下電極組件12。因此，第二氣體可以均勻地沿下電極組件12的周圍通入腔室11中，藉此改變待加工工件SB邊緣區域的蝕刻速率。In order to achieve good etching uniformity, the second air intake passages O1 are preferably evenly distributed or continuously arranged along the circumferential direction or sidewalls of the lower electrode assembly 12. Figures 3 and 4 are respectively a schematic side view and a schematic top view of the bottom electrode assembly 12 drawn according to an embodiment of the present invention. The second gas passage O1 includes a plurality of inlets symmetrically distributed with respect to the center C12 of the bottom electrode assembly 12 Stoma O1a. The number of air intake holes O1a can be increased or decreased according to actual conditions and requirements, as long as the etching rate of the edge area of the workpiece SB to be processed can be averaged. Figures 5 and 6 are respectively a schematic side view and a schematic top view of the lower electrode assembly 12 drawn according to another embodiment of the present invention. The second gas passage O1 includes an open ring-shaped inlet arranged along the circumferential direction of the lower electrode assembly 12. The air groove O1b and the opening of the annular air intake groove O1b continuously extend on the side wall of the lower electrode assembly 12 and surround the lower electrode assembly 12. Therefore, the second gas can be uniformly passed into the chamber 11 along the periphery of the lower electrode assembly 12, thereby changing the etching rate of the edge area of the workpiece SB to be processed.

為能使本發明更容易理解，以下提供多個實施例，以對下電極組件12以及第二進氣通路O1進行詳細說明。且為方便說明與理解，不同實施例之間具有類似或相同功能或是作用的元件沿用相同名稱與標號，但此並非用以限制本發明之發明概念。需要注意的是，不同實施例所揭示的不同元件、不同配置，在不互相衝突的前提下進行組合或置換而形成的其他實施例，仍然在本發明的保護範圍內。In order to make the present invention easier to understand, a number of embodiments are provided below to describe the lower electrode assembly 12 and the second air inlet passage O1 in detail. In addition, for the convenience of description and understanding, elements with similar or identical functions or functions between different embodiments use the same names and labels, but this is not intended to limit the inventive concept of the present invention. It should be noted that other embodiments formed by combining or replacing different elements, different configurations disclosed in different embodiments without conflict with each other still fall within the protection scope of the present invention.

圖7所示為依據本發明一些實施例所繪製的下電極組件12的剖面結構示意圖。下電極組件12主要包括射頻系統和承載、吸附待加工工件SB的靜電盤系統。下電極組件12具有上表面S12a、下表面S12b以及側壁S12c。上表面S12a朝向第一進氣通路111，用來承載待加工工件SB。下表面S12b與上表面S12a相對設置，且朝向抽氣通路112。側壁S12c沿垂直方向（例如Y方向）延伸，以連接上表面S12a與下表面S12b。第二進氣通路O1開口於下電極組件12的側壁S12c，且第二進氣通路O1出口的朝向與垂直方向呈預設角度θ，其中預設角度θ可以依需求進行調整，將於下文中搭配附圖進行說明。FIG. 7 is a schematic diagram showing a cross-sectional structure of the bottom electrode assembly 12 drawn according to some embodiments of the present invention. The lower electrode assembly 12 mainly includes a radio frequency system and an electrostatic disk system for carrying and adsorbing the workpiece SB to be processed. The lower electrode assembly 12 has an upper surface S12a, a lower surface S12b, and a side wall S12c. The upper surface S12a faces the first air inlet passage 111 and is used to carry the workpiece SB to be processed. The lower surface S12b is opposite to the upper surface S12a, and faces the suction passage 112. The side wall S12c extends in a vertical direction (for example, the Y direction) to connect the upper surface S12a and the lower surface S12b. The second air intake passage O1 opens on the side wall S12c of the lower electrode assembly 12, and the direction of the outlet of the second air intake passage O1 is a predetermined angle θ with the vertical direction. The predetermined angle θ can be adjusted as required, which will be described in the following Description with accompanying drawings.

如圖7所示，下電極組件12包括隔離環121（也可以稱為基座）、隔熱環122、絕緣環123、基環124、聚焦環125、靜電盤126及接口盤127。隔離環1連接於支撐件13，其內容空間可以容置電路線、射頻系統線路、氣體管線等，可以依據需求進行調整與規劃，在此不做限制。隔熱環122、絕緣環123、基環124、聚焦環125設置在隔離環121上方，沿垂直方向自下向上依次設置。聚焦環125、基環124、絕緣環123及隔熱環122皆為環形，並且聚焦環125、基環124、絕緣環123及隔熱環122的側壁至少形成（或組成）下電極組件12的部分側壁S12c。接口盤127及靜電盤126沿垂直方向自上向下依次設置於隔離環121上方，且被聚焦環125、基環124及絕緣環123所環繞。As shown in FIG. 7, the lower electrode assembly 12 includes an isolation ring 121 (also referred to as a base), a heat insulation ring 122, an insulation ring 123, a base ring 124, a focus ring 125, an electrostatic disk 126, and an interface disk 127. The isolation ring 1 is connected to the support 13, and its content space can accommodate circuit lines, radio frequency system lines, gas pipelines, etc., which can be adjusted and planned according to requirements, and there is no restriction here. The heat insulation ring 122, the insulation ring 123, the base ring 124, and the focus ring 125 are arranged above the isolation ring 121, and are arranged in order from bottom to top along the vertical direction. The focus ring 125, the base ring 124, the insulation ring 123, and the heat insulation ring 122 are all annular, and the side walls of the focus ring 125, the base ring 124, the insulation ring 123 and the heat insulation ring 122 at least form (or constitute) the lower electrode assembly 12 Part of the side wall S12c. The interface disk 127 and the electrostatic disk 126 are sequentially arranged above the isolation ring 121 along the vertical direction from top to bottom, and are surrounded by the focus ring 125, the base ring 124 and the insulating ring 123.

在一些實施例中，聚焦環125的材料採用陶瓷，通過真空螺釘固定在基環124上。在一些實施例中，基環124安裝於絕緣環123上，且並未固定。在一些實施例中，聚焦環125及基環124均浮擱安裝。在一些實施例中，基環124用真空釘固定於絕緣環123上，使元件之間緊密接觸，以保證第二進氣通路O1的完整性。In some embodiments, the focus ring 125 is made of ceramic, and is fixed on the base ring 124 by vacuum screws. In some embodiments, the base ring 124 is installed on the insulating ring 123 and is not fixed. In some embodiments, both the focus ring 125 and the base ring 124 are mounted floating. In some embodiments, the base ring 124 is fixed on the insulating ring 123 with vacuum nails, so that the components are in close contact to ensure the integrity of the second air inlet passage O1.

靜電盤126的上表面用於承載待加工工件SB。靜電盤126的上表面與聚焦環125的上表面共同形成（或組成）下電極組件12的至少部分上表面S12a。在不同實施例中，靜電盤126的上表面與聚焦環125的上表面可以共平面、靜電盤126的上表面高於聚焦環125的上表面，或者靜電盤126的上表面低於與聚焦環125的上表面。靜電盤126被用於使用靜電力來對位於下電極組件12上的待加工工件SB進行定位，而在一些實施例中，聚焦環125的上表面高於靜電盤126，有助於提高工件SB於下電極組件12上的定位精度。在一些實施例中，靜電盤126至少被聚焦環125及基環124所環繞且與絕緣環123物理接觸。The upper surface of the electrostatic plate 126 is used to carry the workpiece SB to be processed. The upper surface of the electrostatic disk 126 and the upper surface of the focus ring 125 together form (or constitute) at least a part of the upper surface S12 a of the lower electrode assembly 12. In different embodiments, the upper surface of the electrostatic disk 126 and the upper surface of the focus ring 125 may be coplanar, the upper surface of the electrostatic disk 126 is higher than the upper surface of the focus ring 125, or the upper surface of the electrostatic disk 126 is lower than the upper surface of the focus ring 125. The upper surface of 125. The electrostatic disk 126 is used to use electrostatic force to position the workpiece SB to be processed on the lower electrode assembly 12, and in some embodiments, the upper surface of the focus ring 125 is higher than the electrostatic disk 126, which helps to improve the workpiece SB. The positioning accuracy on the lower electrode assembly 12. In some embodiments, the electrostatic disk 126 is at least surrounded by the focus ring 125 and the base ring 124 and is in physical contact with the insulating ring 123.

接口盤127安裝在絕緣環123上，設置於靜電盤126下方，用以為靜電盤126通入射頻、電源等。接口盤127、靜電盤126中還設置有冷卻管道，用來流通冷卻氣體（例如氦氣或是其他適合的氣體），以於加工過程中對靜電盤126上的待加工工件SB進行降溫。冷卻氣體可以是第二氣體，或是與第二氣體不同的第三氣體。在一些實施例中，冷卻氣體包括一或多種惰性氣體。在一些實施例中，接口盤127至少被絕緣環123所環繞且與靜電盤126物理接觸。在一些實施例中，接口盤127中的電線與管線通過支撐件13與腔室11外連接，用以為靜電盤126通入射頻、電源，或是提供冷卻氣體通入冷卻管道。The interface board 127 is installed on the insulating ring 123 and is arranged under the electrostatic board 126 to connect the electrostatic board 126 with radio frequency and power supply. The interface plate 127 and the electrostatic plate 126 are also provided with cooling pipes for circulating cooling gas (such as helium gas or other suitable gas) to cool the workpiece SB to be processed on the electrostatic plate 126 during the processing. The cooling gas may be a second gas or a third gas different from the second gas. In some embodiments, the cooling gas includes one or more inert gases. In some embodiments, the interface disk 127 is at least surrounded by an insulating ring 123 and is in physical contact with the electrostatic disk 126. In some embodiments, the wires and pipelines in the interface disk 127 are connected to the outside of the chamber 11 through the support 13 to provide radio frequency and power supply for the electrostatic disk 126, or to provide cooling gas to the cooling pipeline.

在圖7所示的實施例中，第二進氣通路O1開口於部分基環124與部分聚焦環125，且系統10還可以包括進氣管道O2，設置於下電極組件12中、聚焦環125下方。在一些實施例中，進氣管道O2設置於基環124及絕緣環123中，且經過接口盤127下方之後，通過支撐件13與第二氣體的氣源連通。如圖7所示，進氣管道O2的進氣端與第二氣體的氣源連通（例如是與第一泵16連通，圖7中以虛線表示連通，但並非表示相對位置關係），且進氣管道O2的出氣端（例如是相對於進氣端的埠）與第二進氣通路O1連通。進氣管道O2可以由多個次管道相互連通組成，例如圖7所示的實施例，進氣管道O2可以包括設置靠近側壁S12c的部分下電極組件12中且沿側壁S12c或是沿垂直方向（例如是Y方向）延伸的次管道O21、平行於下電極組件12上表面S12a或是沿水平方向（例如是X方向）延伸的次管道O22，以及與第二氣體的氣源連通的次管道O23。In the embodiment shown in FIG. 7, the second air intake passage O1 is opened in the partial base ring 124 and the partial focusing ring 125, and the system 10 may further include an air intake duct O2, which is arranged in the lower electrode assembly 12 and the focusing ring 125 Below. In some embodiments, the air inlet pipe 02 is disposed in the base ring 124 and the insulating ring 123, and after passing under the interface disk 127, it communicates with the gas source of the second gas through the support 13. As shown in Figure 7, the intake end of the intake pipe O2 is in communication with the gas source of the second gas (for example, it is in communication with the first pump 16. The dotted line in Figure 7 indicates the communication, but does not indicate the relative positional relationship), and the inlet The outlet end (for example, the port opposite to the inlet end) of the air duct O2 communicates with the second inlet passage O1. The intake pipe O2 may be composed of multiple sub-pipes communicating with each other. For example, in the embodiment shown in FIG. 7, the intake pipe O2 may include a portion of the lower electrode assembly 12 disposed near the side wall S12c and along the side wall S12c or along the vertical direction ( For example, the secondary pipeline O21 extending in the Y direction, the secondary pipeline O22 extending parallel to the upper surface S12a of the lower electrode assembly 12 or the horizontal direction (such as the X direction), and the secondary pipeline O23 communicating with the gas source of the second gas .

次管道O21設置於基環124及絕緣環123中，用以連通第二進氣通路O1與次管道O22。次管道O22設置於絕緣環123中，且延伸於接口盤127下方，用以連通次管道O21與次管道O23。次管道O23的部分設置於接口盤127的部分下電極組件12中，其餘部分設置於支撐件13中，用於連通次管道O22與第二氣體的氣源（例如是與第一泵16連通）。The secondary duct O21 is arranged in the base ring 124 and the insulating ring 123 to communicate the second air inlet passage O1 and the secondary duct O22. The secondary pipe O22 is arranged in the insulating ring 123 and extends below the interface disk 127 to connect the secondary pipe O21 and the secondary pipe O23. Part of the secondary pipeline O23 is set in a part of the lower electrode assembly 12 of the interface disc 127, and the rest is set in the support 13 for connecting the secondary pipeline O22 with the gas source of the second gas (for example, communicating with the first pump 16) .

在本發明的一些實施例中，進氣管道O2的俯視結構圖如圖8所示，進氣管道O2包括多個線型次管道O22，分別連接設置於靠近側壁S12c的多個線型次管道O21，由下電極組件12的中心C12朝向側壁S12c的方向延伸，形成相對於下電極組件12的中心C12呈現對稱分佈的放射狀結構。圖7、圖8僅是依據本發明一些實施例所繪製的示意圖，並非用以限制本發明。在本發明其他實施例中，進氣管道O2可以有其他的配置或是結構，只要能使第二氣體均勻地影響位於待加工工件SB邊緣區域的氣體流向，達到提高蝕刻速率均勻性的功效即可。In some embodiments of the present invention, the top structural view of the intake duct O2 is shown in FIG. 8. The intake duct O2 includes a plurality of linear secondary ducts O22, respectively connected to a plurality of linear secondary ducts O21 arranged near the side wall S12c, The center C12 of the lower electrode assembly 12 extends toward the side wall S12c, forming a radial structure symmetrically distributed with respect to the center C12 of the lower electrode assembly 12. 7 and 8 are only schematic diagrams drawn according to some embodiments of the present invention, and are not intended to limit the present invention. In other embodiments of the present invention, the intake duct O2 may have other configurations or structures, as long as the second gas can uniformly affect the gas flow direction at the edge area of the workpiece SB to be processed, so as to achieve the effect of improving the uniformity of the etching rate. can.

為了使第二氣體能有效影響位於工件SB邊緣區域的氣體流向與流速，以達到良好的蝕刻均勻性，第二進氣通路O1於下電極組件12側壁S12c上的開口與下電極組件上表面S12a的距離D介於5-100毫米（mm）之間，其中距離D是沿垂直方向（例如是Y方向）測量。再者，為使第二氣體能以不同的流向進入腔室11中，第二進氣通路O1的出口朝向與垂直方向呈現的預設角度θ介於45-135度（換句話說，以水平方向（例如是X方向）為基準，向上為正向下為負，預設角度介於±45度之間）。預設角度θ是沿垂直方向依順時針往第二進氣通路O1的出口朝向所測得的夾角的角度。在一些實施例中，下電極組件12側壁S12c沿垂直方向延伸，因此預設角度θ實質上等於第二氣體的出口朝向與側壁S12c的夾角。例如在圖7所示的實施例中，第二進氣通路O1的出口朝向與垂直方向垂直（即預設角度θ為90度）。In order to enable the second gas to effectively influence the gas flow direction and velocity at the edge area of the workpiece SB to achieve good etching uniformity, the opening of the second gas inlet passage O1 on the side wall S12c of the lower electrode assembly 12 and the upper surface S12a of the lower electrode assembly The distance D is between 5-100 millimeters (mm), where the distance D is measured in the vertical direction (for example, the Y direction). Furthermore, in order to enable the second gas to enter the chamber 11 in different flow directions, the outlet of the second air inlet passage O1 presents a preset angle θ with the vertical direction between 45-135 degrees (in other words, horizontally The direction (for example, the X direction) is the reference, upward is positive and downward is negative, and the preset angle is between ±45 degrees). The preset angle θ is the angle measured clockwise from the vertical direction toward the outlet of the second intake passage O1. In some embodiments, the sidewall S12c of the lower electrode assembly 12 extends in a vertical direction, so the predetermined angle θ is substantially equal to the angle between the outlet direction of the second gas and the sidewall S12c. For example, in the embodiment shown in FIG. 7, the outlet of the second intake passage O1 faces perpendicular to the vertical direction (that is, the preset angle θ is 90 degrees).

為能更清楚說明本發明的技術特徵以及功效，下文中將提供不同實施例搭配附圖進行說明。圖9、圖10、圖11是依據本發明不同實施例所繪製下電極組件12的剖面結構示意圖。為避免重複性說明，以下針對圖9、圖10、圖11所示的實施例的說明著重在與圖7所示實施例不同之處，與圖7所示實施例相同或類似的地方可以參考上述對於圖7所示實施例的說明，將不重複贅述於下文中。In order to more clearly illustrate the technical features and effects of the present invention, different embodiments are provided below for description with accompanying drawings. FIG. 9, FIG. 10, and FIG. 11 are schematic cross-sectional structural diagrams of the lower electrode assembly 12 drawn according to different embodiments of the present invention. In order to avoid repetitive description, the following description of the embodiment shown in FIG. 9, FIG. 10, and FIG. 11 focuses on the differences from the embodiment shown in FIG. 7, and the same or similar places with the embodiment shown in FIG. 7 can be referred to The above description of the embodiment shown in FIG. 7 will not be repeated in the following.

在圖9所示的實施例中，第二進氣通路O1開口於基環124靠近聚焦環125的部分。在此實施例中，第二進氣通路O1沿水平方向延伸，因此第二進氣通路O1沿的出口朝向與垂直方向垂直（即90度夾角）。第二進氣通路O1於下電極組件12側壁S12c上的開口與下電極組件上表面S12a的距離D，以及第二進氣通路O1的出口朝向與垂直方向呈現的預設角度θ，兩者皆符合上述說明的範圍內，因此能使第二氣體有效影響位於工件SB邊緣區域的氣體流向與流速。In the embodiment shown in FIG. 9, the second air intake passage O1 is opened at a portion of the base ring 124 close to the focus ring 125. In this embodiment, the second air intake passage O1 extends in the horizontal direction, so the outlet of the second air intake passage O1 is oriented perpendicular to the vertical direction (that is, an included angle of 90 degrees). The distance D between the opening of the second air inlet passage O1 on the side wall S12c of the lower electrode assembly 12 and the upper surface S12a of the lower electrode assembly, and the predetermined angle θ that the outlet of the second air inlet passage O1 faces the vertical direction, both are Within the range specified above, the second gas can effectively affect the flow direction and velocity of the gas located in the edge area of the workpiece SB.

在圖10所示的實施例中，類似於圖7所示的實施例，第二進氣通路O1開口於基環124與聚焦環125之間，但不同的地方在於，第二進氣通路O1的出口朝向與垂直方向形成的夾角為銳角（即預設角度θ小於90度）。當預設角度θ小於90度時，代表第二氣體向上通入腔室11中，因此第二氣體進入腔室11時具有向上的分力，可以有效影響位於第二進氣通路O1上方待加工工件SB邊緣區域的氣體流向。In the embodiment shown in FIG. 10, similar to the embodiment shown in FIG. 7, the second intake passage O1 is opened between the base ring 124 and the focus ring 125, but the difference is that the second intake passage O1 The angle formed by the exit direction and the vertical direction is an acute angle (that is, the preset angle θ is less than 90 degrees). When the preset angle θ is less than 90 degrees, it means that the second gas flows upward into the chamber 11, so the second gas has an upward component force when it enters the chamber 11, which can effectively affect the processing to be processed above the second air inlet passage O1 The gas flow direction in the edge area of the workpiece SB.

在圖11所示的實施例中，類似於圖9所示的實施例，第二進氣通路O1開口於基環124靠近聚焦環125的部分，但不同的地方在於，第二進氣通路O1的出口朝向與垂直方向形成的夾角為鈍角（即預設角度θ大於90度）。當預設角度θ大於90度時，代表第二氣體向下通入腔室11中，因此第二氣體進入腔室11時具有向下的分力。當預設角度θ的範圍介於上述說明的數值範圍時，第二氣體還是可以有效影響待加工工件SB邊緣區域的蝕刻速率。In the embodiment shown in FIG. 11, similar to the embodiment shown in FIG. 9, the second intake passage O1 is opened in the portion of the base ring 124 close to the focusing ring 125, but the difference is that the second intake passage O1 The angle formed by the exit direction and the vertical direction is an obtuse angle (that is, the preset angle θ is greater than 90 degrees). When the preset angle θ is greater than 90 degrees, it means that the second gas flows downward into the chamber 11, so the second gas has a downward component force when it enters the chamber 11. When the range of the preset angle θ is within the numerical range described above, the second gas can still effectively affect the etching rate of the edge area of the workpiece SB to be processed.

圖12、圖13是依據本發明不同實施例所繪製，第二進氣通路O1於下電極組件12中的俯視結構示意圖。FIGS. 12 and 13 are schematic diagrams of the top structure of the second air inlet passage O1 in the lower electrode assembly 12 drawn according to different embodiments of the present invention.

在不同的實施例中，第二進氣通路O1的俯視結構可以不同。例如在圖12所示的實施例中，第二進氣通路O1至少部分設置於基環124中，並且第二進氣通路O1包括開設在基環124側壁、相對基環124的中心C124（或圓心，中心或圓心不需要物理上位於基環124上）呈現對稱分佈的多個線型進氣槽O1c，個別開口於基環124側壁，形成如圖3、圖4所示的多個進氣孔O1a。又例如在圖13所示的實施例中，第二進氣通路O1包括開設在基環124上表面邊緣處、沿基環124周向設置的環型進氣槽O1b。需注意的是，環型進氣槽O1b與線型進氣槽O1c都可以是圖9、圖10、圖11個別所示的進氣槽O11，元件標號O1b、O1c只是為了方便區別進氣槽O11於不同實施例中的俯視結構。在一些實施例中，圖12、圖13所示的線型進氣槽O1c、環型進氣槽O1b可以是設置於基環124上表面的開放式凹槽結構，聚焦環125覆蓋在基環124上從而形成第二進氣通路O1。In different embodiments, the top view structure of the second intake passage O1 may be different. For example, in the embodiment shown in FIG. 12, the second air intake passage O1 is at least partially disposed in the base ring 124, and the second air intake passage O1 includes a center C124 opened on the side wall of the base ring 124 opposite to the center of the base ring 124 (or The center of the circle, the center or the center of the circle need not be physically located on the base ring 124) present a plurality of symmetrically distributed linear air inlet grooves O1c, which are individually opened on the side wall of the base ring 124 to form multiple air inlet holes as shown in Figures 3 and 4 O1a. For another example, in the embodiment shown in FIG. 13, the second air intake passage O1 includes an annular air intake groove O1 b opened at the edge of the upper surface of the base ring 124 and arranged along the circumference of the base ring 124. It should be noted that both the annular air inlet groove O1b and the linear air inlet groove O1c can be the air inlet groove O11 shown in Figure 9, Figure 10, and Figure 11 individually. The component labels O1b and O1c are just for the convenience of distinguishing the air inlet groove O11. The top view structure in different embodiments. In some embodiments, the linear air inlet groove O1c and the annular air inlet groove O1b shown in FIGS. 12 and 13 may be an open groove structure provided on the upper surface of the base ring 124, and the focus ring 125 covers the base ring 124. Thereby, a second intake passage O1 is formed.

另外，次管道O21的結構也可以依據不同實施例進行調整成類於圖12所示的多個線型進氣槽或是類似於或圖13所示的環型進氣槽。圖14所示是依據本發明一些實施例所繪製的次管道O21、次管道O22與第二進氣通路O1的俯視結構示意圖。不同於圖8所示的實施例，在圖14所示的實施例中，次管道O21具有類似於環型進氣槽O1b的環形結構，且多個線型次管道O22連通於次管道O21上，對應多個線型進氣槽O1c。圖14僅為示意之用，並非用以限制本發明。本領域技術人員可以理解，上述說明提供的各種不同質性的次管道O21可以與不同質性的第二進氣通路O1進行搭配或是置換以產生新的實施例。In addition, the structure of the secondary duct O21 can also be adjusted according to different embodiments to be similar to the multiple linear air inlet grooves shown in FIG. 12 or the annular air inlet grooves similar to or shown in FIG. 13. 14 is a schematic top view of the secondary duct O21, the secondary duct O22, and the second air inlet passage O1 drawn according to some embodiments of the present invention. Different from the embodiment shown in FIG. 8, in the embodiment shown in FIG. 14, the secondary duct O21 has an annular structure similar to the annular air inlet groove O1b, and a plurality of linear secondary ducts O22 are connected to the secondary duct O21. Corresponds to multiple linear air intake slots O1c. Fig. 14 is for illustration only, and is not used to limit the present invention. Those skilled in the art can understand that the various secondary ducts O21 of different qualities provided in the above description can be matched or replaced with the second air intake passage O1 of different qualities to produce new embodiments.

由上述說明以及圖9、圖10、圖11、圖12、圖13、圖14可以理解，第二進氣通路O1設置於聚焦環125、基環124的一個或多個，但本發明不以此為限。在其他實施例中，第二進氣通路O1設置於可以聚焦環125、基環124、絕緣環123中的一個或多個上。再者只要符合上述說明的條件，第二進氣通路O1的出口位置、朝向以及結構可以依據不同實施例中聚焦環125、基環124、絕緣環12的厚度、第一氣體的流向與流速、待加工工件SB的材質等進行調整，在此不做限制。It can be understood from the above description and FIGS. 9, 10, 11, 12, 13, and 14 that the second air intake passage O1 is provided in one or more of the focus ring 125 and the base ring 124, but the present invention does not This is limited. In other embodiments, the second air intake passage O1 is provided on one or more of the focusing ring 125, the base ring 124, and the insulating ring 123. Furthermore, as long as the above-mentioned conditions are met, the exit position, orientation, and structure of the second air inlet passage O1 can be based on the thickness of the focusing ring 125, the base ring 124, the insulating ring 12, the flow direction and the flow velocity of the first gas in different embodiments, The material of the workpiece SB to be processed is adjusted, and there is no restriction here.

在前述說明的系統10的相關實施例中，第二氣體（用以調節蝕刻均勻性）以及第三氣體（用以於加工過程中對待加工工件SB進行降溫）的動力分別由第一泵16與第二泵17來提供，可以對冷卻以及蝕刻速率分別進行調整，以對加工中的待加工工件SB進行良好的控制。但在本發明其他實施例中，第二氣體與第三氣體可以為相同氣體，且第二氣體及第三氣體的動力可以由單一泵來提供，除了減少機台的成本，也有利於與現有機台進行整合。In the related embodiment of the system 10 described above, the power of the second gas (used to adjust the etching uniformity) and the third gas (used to cool the workpiece SB during the processing) is driven by the first pump 16 and The second pump 17 is provided, and the cooling and etching rates can be adjusted separately to control the workpiece SB to be processed during processing. However, in other embodiments of the present invention, the second gas and the third gas can be the same gas, and the power of the second gas and the third gas can be provided by a single pump. In addition to reducing the cost of the machine, it is also beneficial to the current situation. Organic platform for integration.

圖15所示是依據本發明一些實施例所繪製的系統20，系統20類似於前述系統10，不同的之處在於，系統20的進氣管道O2連通第二進氣通路O1與接口盤127中的冷卻管道（未繪示於圖中）。冷卻管道可以均勻地分佈於靜電盤126及待加工工件SB下方，在此不對冷卻管道的結構做限制。因此，當冷卻氣體經由第三泵18進入接口盤127的冷卻管道後，冷卻氣體會流入第二進氣通路O1中並進入腔室11。因此，冷卻氣體可以作為第二氣體均勻地沿下電極組件12周向且以與第一氣體不同的流向進入腔室11中。FIG. 15 shows a system 20 drawn according to some embodiments of the present invention. The system 20 is similar to the aforementioned system 10, except that the intake duct O2 of the system 20 communicates with the second intake passage O1 and the interface disk 127. The cooling pipe (not shown in the figure). The cooling pipes can be evenly distributed under the electrostatic plate 126 and the workpiece SB to be processed, and the structure of the cooling pipes is not limited here. Therefore, when the cooling gas enters the cooling pipe of the interface disk 127 through the third pump 18, the cooling gas will flow into the second air inlet passage O1 and enter the chamber 11. Therefore, the cooling gas can be used as the second gas to enter the chamber 11 uniformly along the circumferential direction of the lower electrode assembly 12 and in a different flow direction from the first gas.

圖16所示為依據本發明一些實施例所繪製的系統20的下電極組件12的剖面結構示意圖。圖16所示的下電極組件12類似圖7所示的下電極組件12，不同的地方在於，圖16所示的進氣管道O2連通第二進氣通路O1與接口盤127中的冷卻管道，而不是設置於接口盤127下方。並且進氣管道O2不會直接連通第三泵18，而是經由冷卻管道與第三泵18連通。FIG. 16 shows a schematic cross-sectional structure diagram of the bottom electrode assembly 12 of the system 20 drawn according to some embodiments of the present invention. The lower electrode assembly 12 shown in FIG. 16 is similar to the lower electrode assembly 12 shown in FIG. 7 except that the intake duct O2 shown in FIG. 16 communicates with the second intake passage O1 and the cooling duct in the interface disk 127. It is not set under the interface disk 127. In addition, the intake pipe 02 does not directly communicate with the third pump 18, but communicates with the third pump 18 via a cooling pipe.

在圖16所示的實施例中，進氣管道O2包括設置於靠近側壁S12c的部分下電極組件12中、沿側壁S12c或是垂直方向（例如是Y方向）延伸的次管道O21，以及平行於下電極組件12上表面S12a或是沿水平方向（例如是X方向）延伸的次管道O22。次管道O21設置於基環124及絕緣環123的一或多個中，用以連通第二進氣通路O1與次管道O22。詳細來說，次管道O21的出氣端與第二進氣通路O1連通，其進氣端則位於絕緣環123中，與次管道O22連通。次管道O22的部分設置於絕緣環123中，其餘部分設置於接口盤127中，用於連通接口盤127中的冷卻管道與次管道O21。因此，在此實施例中，調控第三泵18可以對加工中的待加工工件SB進行溫度的控制，還可以同時對蝕刻速率進行調整，藉此提高蝕刻均勻性。進氣管道O2的結構在此不做限制，例如可以是類似圖8所示的放射狀結構，本領域技術人員可以依據需求進行調整。In the embodiment shown in FIG. 16, the intake duct O2 includes a secondary duct O21 arranged in a portion of the lower electrode assembly 12 close to the side wall S12c, extending along the side wall S12c or in a vertical direction (for example, the Y direction), and parallel to The upper surface S12a of the lower electrode assembly 12 may be a secondary pipe O22 extending in a horizontal direction (for example, the X direction). The secondary duct O21 is provided in one or more of the base ring 124 and the insulating ring 123 for connecting the second air inlet passage O1 and the secondary duct O22. In detail, the outlet end of the secondary duct O21 communicates with the second air inlet passage O1, and the inlet end of the secondary duct O21 is located in the insulating ring 123 and communicates with the secondary duct O22. Part of the secondary pipe O22 is arranged in the insulating ring 123, and the remaining part is arranged in the interface disk 127 for connecting the cooling pipe in the interface disk 127 and the secondary pipe O21. Therefore, in this embodiment, adjusting the third pump 18 can control the temperature of the workpiece SB being processed, and can also adjust the etching rate at the same time, thereby improving the etching uniformity. The structure of the intake duct O2 is not limited here, for example, it may be a radial structure similar to that shown in FIG. 8, and those skilled in the art can adjust it according to requirements.

本發明的等離子體系統因具有設置於下電極組件的側壁的第二進氣通路，因此能對待加工工件SB的邊緣區域的蝕刻速率進行調整，達到良好的蝕刻均勻性。蝕刻均勻性的重要性尤其可以體現在深蝕刻制程。為能清楚說明本發明的功效，以Bosch製程為例說明，Bosch製程藉由蝕刻與沉積步驟迴圈切換，並且蝕刻步驟和沉積步驟單步驟的執行時間非常短。由於短時間、高重複性的蝕刻與沉積步驟，Bosch製程對於蝕刻速率、均勻性的要求極高，否則蝕刻後的形貌、側壁褶皺（Scallop）、不一致性等將對導致產品量率下降。待加工工件SB邊緣區域與中心區域的蝕刻均勻度不佳，相對於單次的蝕刻或是沉積步驟，在片間重複性的蝕刻與沉積步驟迴圈的Bosch製程中將造成巨大的影響。Since the plasma system of the present invention has a second air inlet passage arranged on the side wall of the lower electrode assembly, the etching rate of the edge area of the workpiece SB to be processed can be adjusted to achieve good etching uniformity. The importance of etching uniformity can be particularly reflected in the deep etching process. In order to clearly illustrate the effect of the present invention, the Bosch process is taken as an example. The Bosch process is cyclically switched between etching and deposition steps, and the execution time of a single step of the etching step and the deposition step is very short. Due to the short time and high repeatability of the etching and deposition steps, the Bosch process requires extremely high etching rate and uniformity. Otherwise, the morphology, sidewall wrinkles (Scallop), inconsistencies, etc. after etching will lead to a decrease in product yield. The etching uniformity of the edge area and the center area of the workpiece SB to be processed is not good. Compared with a single etching or deposition step, the Bosch process of repeated etching and deposition steps between wafers will have a huge impact.

本發明提供的系統包括第二進氣通路，用於通入第二氣體，可以有效的控制第一氣體或是製程氣體對工件的蝕刻速率，尤其是能改善工件邊緣區域因靠近氣體通路所導致的氣體流速較快、工件邊緣區域蝕刻速率較中心區域高的問題。第二氣體可以是一或多種惰性氣體（如氦氣）或是其他不會與製程氣體或是工件表面發生反應的氣體。第二氣體還可以選擇使用與製程氣體相同的氣體，由於本發明的第二進氣通路實質上設置於待加工工件下方，在抽氣元件的工作下，即使第二進氣通路的出口朝向向上，第二氣體進入腔室後不容易逆向流動到工件邊緣區域，但仍可以影響製程氣體於工件邊緣區域的流速。因此，本發明提供的系統，尤其是當應用於Bosch製程時，可以提供良好的蝕刻均勻性以及產品良率。The system provided by the present invention includes a second gas inlet passage for introducing the second gas, which can effectively control the etching rate of the first gas or the process gas on the workpiece, and can especially improve the edge area of the workpiece due to the proximity of the gas passage The problem of faster gas flow rate and higher etching rate in the edge area of the workpiece than in the center area. The second gas can be one or more inert gases (such as helium) or other gases that will not react with the process gas or the surface of the workpiece. The second gas can also be selected to use the same gas as the process gas. Since the second gas inlet passage of the present invention is essentially arranged under the workpiece to be processed, even if the outlet of the second gas inlet passage faces upwards under the operation of the suction element After the second gas enters the chamber, it is not easy to flow backwards to the edge area of the workpiece, but it can still affect the flow rate of the process gas in the edge area of the workpiece. Therefore, the system provided by the present invention, especially when applied to the Bosch process, can provide good etching uniformity and product yield.

簡單歸納本發明，本發明一種等離子體系統，利用第二進氣通路，可以有效地調整待加工工件邊緣區域的蝕刻速率，達到良好的蝕刻均勻性。本發明雖然揭露上述實施例，但並非用以限制本發明的概念與用途。本發明的概念可以套用於任何可以經由調整氣體流速或流向從而影響結果的製程中，例如沉積製程，第二進氣通路可以使第二氣體以與沉積氣體不同的方向進入腔室中，藉此調整沉積的的均勻度。Summarizing the present invention simply, a plasma system of the present invention utilizes the second air inlet passage to effectively adjust the etching rate of the edge area of the workpiece to be processed, so as to achieve good etching uniformity. Although the present invention discloses the above-mentioned embodiments, it is not intended to limit the concept and application of the present invention. The concept of the present invention can be applied to any process that can affect the result by adjusting the gas flow rate or flow direction, such as a deposition process. The second gas inlet passage can allow the second gas to enter the chamber in a direction different from the deposition gas, thereby Adjust the uniformity of the deposition.

前述內容概括數項實施例之特徵，使得熟習此項技術者可更佳地理解本揭露之態樣。熟習此項技術者應瞭解，其等可容易地使用本揭露作為用於設計或修改用於實行本文中介紹之實施例之相同目的及/或達成相同優點之其他製程及結構之一基礎。熟習此項技術者亦應瞭解，此等等效構造不背離本揭露之精神及範疇，且其等可在不背離本揭露之精神及範疇之情況下在本文中作出各種改變、置換及更改。The foregoing content summarizes the features of several embodiments, so that those familiar with the art can better understand the aspect of the disclosure. Those familiar with the technology should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for implementing the same purpose and/or achieving the same advantages of the embodiments described herein. Those familiar with this technology should also understand that these equivalent structures do not depart from the spirit and scope of this disclosure, and they can make various changes, substitutions and alterations in this article without departing from the spirit and scope of this disclosure.

10,20:系統 11:腔室 12:下電極組件 13:支撐件 14:進氣元件 15:抽氣元件 16:第一泵 17:第二泵 111:第一進氣通路 112:排氣通路 O1:第二進氣通路 SB:待加工工件 O1a:進氣孔 C12:下電極組件中心 O1b:環型進氣槽 O21,O22,O23:次管道 121:隔離環 122:隔熱環 123:絕緣環 124:基環 125:聚焦環 126:靜電盤 127:接口盤 S12a:下電極組件上表面 S12b:下電極組件下表面 S12c:下電極組件側壁 C124:基環中心10, 20: System 11: Chamber 12: Lower electrode assembly 13: Support 14: intake element 15: Extraction element 16: first pump 17: Second pump 111: First intake passage 112: Exhaust passage O1: Second intake passage SB: Workpiece to be processed O1a: Air intake C12: Center of lower electrode assembly O1b: Annular intake groove O21, O22, O23: secondary pipeline 121: isolation ring 122: Insulation ring 123: Insulating ring 124: base ring 125: focus ring 126: Electrostatic Disk 127: interface disk S12a: Upper surface of lower electrode assembly S12b: Lower surface of lower electrode assembly S12c: side wall of lower electrode assembly C124: Base ring center

當結合附圖閱讀時，從以下詳細描述最佳理解本揭露之態樣。應注意，根據產業中之標準實踐，各種構件未按比例繪製。事實上，為了論述的清楚起見可任意增大或減小各種構件之尺寸。 圖1是依據本發明實施例的等離子體系統的示意圖。 圖2是依據本發明實施例的等離子體系統對工件進行加工時的氣體流向示意圖。 圖3是依據本發明實施例的等離子體系統的下電極組件的示意圖。 圖4是依據本發明實施例的下電極組件與第二進氣通路的俯視示意圖。 圖5是依據本發明另一實施例的等離子體系統的下電極組件的示意圖。 圖6是依據本發明另一實施例的下電極組件與第二進氣通路的俯視示意圖。 圖7是依據本發明實施例的等離子體系統的下電極組件的剖面示意圖。 圖8是依據本發明實施例的進氣管道的俯視示意圖。 圖9、圖10、圖11是依據本發明實施例的下電極組件的剖面示意圖。 圖12、圖13是依據本發明實施例的基環與第二進氣通路的俯視示意圖。 圖14是依據本發明實施例的第二進氣通路與進氣管道的俯視示意圖。 圖15是依據本發明實施例的等離子體系統的示意圖。 圖16是依據本發明實施例的等離子體系統的下電極組件的剖面示意圖。When read in conjunction with the accompanying drawings, the aspect of the present disclosure is best understood from the following detailed description. It should be noted that according to standard practice in the industry, the various components are not drawn to scale. In fact, the size of various components can be increased or decreased arbitrarily for the sake of clarity of the discussion. Fig. 1 is a schematic diagram of a plasma system according to an embodiment of the present invention. Fig. 2 is a schematic diagram of the gas flow when the plasma system processes a workpiece according to an embodiment of the present invention. Fig. 3 is a schematic diagram of a lower electrode assembly of a plasma system according to an embodiment of the present invention. 4 is a schematic top view of a lower electrode assembly and a second air intake passage according to an embodiment of the present invention. FIG. 5 is a schematic diagram of a lower electrode assembly of a plasma system according to another embodiment of the present invention. 6 is a schematic top view of a lower electrode assembly and a second air intake passage according to another embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a lower electrode assembly of a plasma system according to an embodiment of the present invention. Fig. 8 is a schematic top view of an intake duct according to an embodiment of the present invention. FIG. 9, FIG. 10, and FIG. 11 are schematic cross-sectional views of a bottom electrode assembly according to an embodiment of the present invention. 12 and 13 are schematic top views of the base ring and the second air inlet passage according to an embodiment of the present invention. Fig. 14 is a schematic top view of a second air intake passage and an air intake duct according to an embodiment of the present invention. Fig. 15 is a schematic diagram of a plasma system according to an embodiment of the present invention. 16 is a schematic cross-sectional view of the lower electrode assembly of the plasma system according to an embodiment of the present invention.

10:系統10: System

11:腔室11: Chamber

12:下電極組件12: Lower electrode assembly

13:支撐件13: Support

14:進氣元件14: intake element

15:抽氣元件15: Extraction element

16:第一泵16: first pump

17:第二泵17: Second pump

111:第一進氣通路111: First intake passage

112:排氣通路112: Exhaust passage

O1:第二進氣通路O1: Second intake passage

SB:待加工工件SB: Workpiece to be processed

Claims (13)

一種等離子體系統，包括： 一腔室，包括一第一進氣通路與一抽氣通路，該第一進氣通路用於通入一第一氣體，該抽氣通路用於排出該第一氣體；以及 一下電極組件，設置於該腔室中用於承載一待加工工件，且位於該第一進氣通路下方，該下電極組件的一側壁上設置有一第二進氣通路，該第二進氣通路用於通入一第二氣體，其中該第二進氣通路的一出口的朝向與垂直方向呈一預設角度。A plasma system includes: A chamber, including a first air inlet passage and an air extraction passage, the first air inlet passage is used to pass in a first gas, and the air extraction passage is used to discharge the first gas; and The lower electrode assembly is arranged in the chamber for carrying a workpiece to be processed and is located below the first air inlet passage. A second air inlet passage is provided on a side wall of the lower electrode assembly, and the second air inlet passage It is used to pass in a second gas, wherein the direction of an outlet of the second air inlet passage is at a predetermined angle with the vertical direction. 如請求項1所述的等離子體系統，其中該預設角度為45-135度。The plasma system according to claim 1, wherein the preset angle is 45-135 degrees. 如請求項2所述的等離子體系統，其中該第二進氣通路的該出口的朝向與該垂直方向垂直。The plasma system according to claim 2, wherein the direction of the outlet of the second air inlet passage is perpendicular to the vertical direction. 如請求項2或3所述的等離子體系統，其中該第二進氣通路的該出口與該下電極組件的一上表面的距離為5-100毫米（mm）。The plasma system according to claim 2 or 3, wherein the distance between the outlet of the second air inlet passage and an upper surface of the lower electrode assembly is 5-100 millimeters (mm). 如請求項1所述的等離子體系統，其中該第二進氣通路包括：相對該下電極組件的一中心呈現對稱分佈的多個進氣孔。The plasma system according to claim 1, wherein the second air inlet passage includes a plurality of air inlet holes symmetrically distributed with respect to a center of the lower electrode assembly. 如請求項1所述的等離子體系統，其中該第二進氣通路包括：沿該下電極組件周向設置的一進氣槽。The plasma system according to claim 1, wherein the second air inlet passage includes: an air inlet groove arranged along the circumference of the lower electrode assembly. 如請求項5或6所述的等離子體系統，另包括： 一進氣管道，設置於該下電極組件中，具有一放射狀結構，其中該進氣管道的一進氣端與該第二氣體的一氣源連通，該進氣管道的一出氣端與該第二進氣通路連通。The plasma system according to claim 5 or 6, further comprising: An air inlet duct is arranged in the lower electrode assembly and has a radial structure, wherein an air inlet end of the air inlet duct communicates with an air source of the second gas, and an air outlet end of the air inlet duct communicates with the gas source of the second gas. The second intake passage communicates with each other. 如請求項7所述的等離子體系統，其中該下電極組件包括： 沿垂直方向自上向下依次設置的一聚焦環、一基環及一絕緣環，該聚焦環、該基環、該絕緣環的側壁至少形成該下電極組件的部分該側壁。The plasma system according to claim 7, wherein the lower electrode assembly includes: A focusing ring, a base ring, and an insulating ring are sequentially arranged from top to bottom in a vertical direction, and the side walls of the focusing ring, the base ring, and the insulating ring form at least a part of the side wall of the lower electrode assembly. 如請求項8所述的等離子體系統，其中該第二進氣通路設置於該聚焦環、該基環、該絕緣環中的一個或多個上。The plasma system according to claim 8, wherein the second air inlet passage is provided on one or more of the focusing ring, the base ring, and the insulating ring. 如請求項9所述的等離子體系統，其中該第二進氣通路設置於該聚焦環和該基環之間，包括開設在該基環的一上表面上並相對該基環的一中心呈現放射狀且對稱分佈的多個線型進氣槽，或著，開設在該基環的一上表面邊緣處沿該基環周向開設的一環型進氣槽，該聚焦環覆蓋在該基環上，從而形成該第二進氣通路。The plasma system according to claim 9, wherein the second air inlet passage is provided between the focusing ring and the base ring, and includes being opened on an upper surface of the base ring and presenting relative to a center of the base ring A plurality of linear air inlet grooves distributed radially and symmetrically, or a ring-shaped air inlet groove opened at an upper surface edge of the base ring along the circumference of the base ring, the focusing ring covering the base ring , Thereby forming the second intake passage. 如請求項8所述的等離子體系統，其中該下電極組件另包括： 一靜電盤，被該聚焦環與該基環環繞，該靜電盤的一上表面用於承載該待加工工件；以及 一接口盤，設置於該靜電盤下方，該接口盤中設置有一冷卻管道，該冷卻管道與該進氣管道或該第二氣體的一氣源連通，用於向該待加工工件的一下表面通入該第二氣體，以對加工中的該待加工工件進行降溫。The plasma system according to claim 8, wherein the lower electrode assembly further includes: An electrostatic disk surrounded by the focus ring and the base ring, and an upper surface of the electrostatic disk is used to carry the workpiece to be processed; and An interface plate is arranged under the electrostatic plate, and a cooling pipe is arranged in the interface plate, and the cooling pipe is connected with the air inlet pipe or a gas source of the second gas for communicating to the lower surface of the workpiece to be processed. The second gas is introduced to lower the temperature of the workpiece to be processed during processing. 如請求項8所述的等離子體系統，其中該下電極組件另包括： 一靜電盤，被該聚焦環與該基環圍繞，該靜電盤的一上表面用於承載該待加工工件；以及 一接口盤，設置於該靜電盤下方，該接口盤中設置有一冷卻管道，該冷卻管道用於向該待加工工件的一下表面通入一第三氣體，以對加工中的待加工工件進行降溫。The plasma system according to claim 8, wherein the lower electrode assembly further includes: An electrostatic disk surrounded by the focus ring and the base ring, and an upper surface of the electrostatic disk is used to carry the workpiece to be processed; and An interface plate is arranged under the electrostatic plate, and a cooling pipe is arranged in the interface plate, and the cooling pipe is used to pass a third gas to the lower surface of the workpiece to be processed to cool the workpiece to be processed during processing . 如請求項1-3任一項所述的等離子體系統，其中該第一氣體是用於對該待加工工件進行蝕刻的一蝕刻氣體，該第二氣體包括一或多種惰性氣體。The plasma system according to any one of claims 1-3, wherein the first gas is an etching gas used to etch the workpiece to be processed, and the second gas includes one or more inert gases.
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