JPS61172352A - Semiconductor package - Google Patents
Semiconductor packageInfo
- Publication number
- JPS61172352A JPS61172352A JP1285285A JP1285285A JPS61172352A JP S61172352 A JPS61172352 A JP S61172352A JP 1285285 A JP1285285 A JP 1285285A JP 1285285 A JP1285285 A JP 1285285A JP S61172352 A JPS61172352 A JP S61172352A
- Authority
- JP
- Japan
- Prior art keywords
- memory element
- transmitting glass
- information
- ultraviolet
- ultraviolet transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/18—Circuits for erasing optically
Landscapes
- Non-Volatile Memory (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収納するための半導体バクケージ
に関し、より詳細には紫外線消去型半導体記憶素子を収
納するための半導体パッケージの改良に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a semiconductor package for housing a semiconductor element, and more particularly to an improvement in a semiconductor package for housing an ultraviolet erasable semiconductor memory element. be.
（従来の技術）
近時、情報処理装置の高性能化に伴ない、これを構成す
る半導体記憶素子も記憶している情報が任意に変更でき
るもの、即ち紫外線照射によって記憶している情報を消
去するとともに所望する情報を新たに書込み記憶させる
ことができる紫外線消去型半導体記憶素子に変わりつつ
ある。(Prior Art) Recently, as information processing devices have become more sophisticated, the information stored in the semiconductor memory elements that make up these devices can be changed at will, that is, the stored information can be erased by irradiation with ultraviolet rays. At the same time, they are being replaced by ultraviolet-erasable semiconductor memory elements that can newly write and store desired information.
従来、この紫外線消去型半導体記憶素子（以下、記憶素
子という）を収納する半導体パフケージは第８図及び第
４図に示すようにセラミック、樹脂等の電気絶縁材料か
ら成る絶縁基体１１と、内部に収納される記憶素子１６
が対向する部位に、記憶素子１６の記憶情報を消去する
ための紫外線を透過する円形のガラス板１８を取着した
電気絶縁材料から成る蓋体１２と、記憶素子１６を外部
回路と電気的に接続するための外部リード端子１４によ
り構成されており、その内部に記憶素子１６を収納し、
且つ所定のワイヤボンディングを行った後、ガラス、樹
脂等の封止部材１５により気密封止されて半導体記憶装
置が完成する。Conventionally, a semiconductor puff cage that houses this ultraviolet-erasable semiconductor memory element (hereinafter referred to as a memory element) has an insulating base 11 made of an electrically insulating material such as ceramic or resin, and an internal structure as shown in FIGS. 8 and 4. Storage element 16 to be stored
A cover body 12 made of an electrically insulating material has a circular glass plate 18 that transmits ultraviolet rays for erasing the stored information in the memory element 16 attached to the opposing portion thereof, and a lid body 12 made of an electrically insulating material that connects the memory element 16 to an external circuit electrically. It is composed of external lead terminals 14 for connection, and stores a memory element 16 therein.
After performing predetermined wire bonding, the semiconductor memory device is completed by being hermetically sealed with a sealing member 15 such as glass or resin.
（発明が解決しようとする問題点）
しかし乍ら、この従来の半導体パッケージは記憶する情
報量の増大に伴なって収納される記憶素子１６の形状が
大となった場合、記憶素子１６内の情報を消去するため
の紫外線を透過するがラス板１３が円形形状を成してお
り、該ガラス板１３の寸法は蓋体１２の幅寸法Ａによっ
て制約され、大きくできないことから記憶素子１６全面
に紫外線を照射することができず、その結果、記憶素子
内の記憶情報を任意に変更することができないという欠
点を有していた。(Problems to be Solved by the Invention) However, in this conventional semiconductor package, when the shape of the storage element 16 to be housed becomes larger as the amount of information to be stored increases, the size of the storage element 16 increases. The glass plate 13, which transmits ultraviolet rays for erasing information, has a circular shape, and the dimensions of the glass plate 13 are limited by the width dimension A of the lid 12 and cannot be made large, so the entire surface of the memory element 16 is It has the disadvantage that ultraviolet rays cannot be irradiated, and as a result, the information stored in the memory element cannot be changed arbitrarily.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
内部に収納される記憶素子の形状が大となったとしても
その全面に紫外線を照射することができ、記憶素子内の
記憶情報を任意に変更可能とした気密性に優れた半導体
パッケージを提供することにある。(Object of the Invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to be able to irradiate the entire surface of the memory element with ultraviolet light even if the shape of the memory element housed inside becomes large. It is an object of the present invention to provide a semiconductor package with excellent airtightness in which information stored in an element can be arbitrarily changed.
（問題点を解決するための手段）
本発明は絶縁基体と蓋体とから成り、内部に半導体素子
を収納する半導体パッケージにおいて、前記蓋体の少な
くとも半導体素子が対向する部位に、角部に丸みを有す
る角型の紫外線透過ガラスを設けたことを特徴とするも
のである。(Means for Solving the Problems) The present invention provides a semiconductor package comprising an insulating base body and a lid body and housing a semiconductor element therein. It is characterized by having a rectangular ultraviolet transmitting glass having a shape.
（実施例）
次に、本発明を第１図及び９Ｊ２図に示す実施例に基づ
き詳細に説明する。(Example) Next, the present invention will be described in detail based on an example shown in FIG. 1 and FIG. 9J2.
第１図及び第２図は本発明の半導体パッケージの一実施
例を示し、１はセラミック、樹脂等の電気絶縁材料から
成る絶縁基体であり、２は同じく電気絶縁材料から成る
蓋体である。この絶縁基体１と蓋体２とにより記憶素子
を収納するための絶縁容器８が構成される。FIGS. 1 and 2 show an embodiment of the semiconductor package of the present invention, in which 1 is an insulating base made of an electrically insulating material such as ceramic or resin, and 2 is a lid also made of an electrically insulating material. This insulating base 1 and lid 2 constitute an insulating container 8 for accommodating a memory element.
前記基体１及び蓋体２はそれぞれ中央部に半導体記憶素
子を収納するための凹部が形成されており、該基体１の
凹部底面には半導体記憶素子７が樹脂、ガラス、ロウ材
等の接着材を介し取着固定されている。The base body 1 and the lid body 2 each have a recess formed in the center thereof to accommodate a semiconductor memory element, and the semiconductor memory element 7 is placed on the bottom surface of the recess of the base body 1 with an adhesive such as resin, glass, or brazing material. It is fixed through the mounting.
また前記蓋体２には記憶素子７の対向する部位に紫外線
透過ガラス４が設けられる。具体的には、紫外線透過ガ
ラス４の周囲を溶融し、蓋体２の所定空所に接合させる
ことによって蓋体２に取着される。この紫外線透過ガラ
ス４は従来と同様、記憶素子７の記憶情報を消去するた
めに絶舜容器８外部より記憶素子７に紫外線を透過照射
させる作用を為す。Further, an ultraviolet-transmitting glass 4 is provided on the lid 2 at a portion facing the memory element 7 . Specifically, it is attached to the lid 2 by melting the periphery of the ultraviolet-transmitting glass 4 and joining it to a predetermined space in the lid 2 . As in the conventional case, this ultraviolet transmitting glass 4 functions to transmit and irradiate ultraviolet rays onto the storage element 7 from outside the storage container 8 in order to erase the stored information in the storage element 7.
前記基体ｌ及び蓋体２は、ガラス、樹脂等の封止部材５
を介して取着され、これにより絶縁容器３の内部は外気
から完全に気密に封止される。The base 1 and the lid 2 have a sealing member 5 made of glass, resin, etc.
The inside of the insulating container 3 is thereby completely hermetically sealed from the outside air.
また前記基体１と蓋体２との間には導電性材料、例えば
アルミニウム（ＡＪ）、銅（Ｃｕ）、コバール（Ｆｅ
−Ｎｉ、 −Ｃｏ）等の金属から成る外部リード端子６
が配されており、該外部リード端子６は記憶素子７の各
電極がワイヤを介し電気的に接続され、外部リード端子
６を外部回路に接続することにより記憶素子７が外部回
路と接続されることになる。Further, a conductive material such as aluminum (AJ), copper (Cu), Kovar (Fe) is provided between the base body 1 and the lid body 2.
External lead terminal 6 made of metal such as -Ni, -Co)
The external lead terminals 6 are electrically connected to each electrode of the memory element 7 via wires, and by connecting the external lead terminals 6 to an external circuit, the memory element 7 is connected to the external circuit. It turns out.
尚、前記外部リード端子６は絶縁容器３を封止部材５で
気密封止する際に同時に基体ｌと蓋体２の間に取着され
る。The external lead terminal 6 is attached between the base 1 and the lid 2 at the same time when the insulating container 3 is hermetically sealed with the sealing member 5.
か（して、この半導体パッケージによれば、基体１の凹
部底面に記憶素子７を取着固定するとともに該記憶素子
７の各電極をワイヤにより外部リード端子６に接続させ
た後、基体１と蓋体２を封止部材５で取着させることに
よりその内部に記憶素子７を気密に封止し、半導体記憶
装置となる。(Thus, according to this semiconductor package, after the memory element 7 is attached and fixed to the bottom of the recess of the base 1 and each electrode of the memory element 7 is connected to the external lead terminal 6 with a wire, the base 1 and By attaching the lid 2 with the sealing member 5, the storage element 7 is hermetically sealed therein, forming a semiconductor storage device.
本発明に詔いては、蓋体２に設けられている紫外線透過
ガラス４の形状を角部に丸みを有する角型とすることが
重要である。According to the present invention, it is important that the ultraviolet transmitting glass 4 provided on the lid 2 has a rectangular shape with rounded corners.
このために、例えば第１図に示す実施例では紫外線透過
ガラス４は各角部Ｒが丸みを有する矩形状を成している
。このように紫外線透過ガラス４を角型（矩形状）と成
すことＫより紫外線透過ガラス４は蓋体２の長さ方向Ｂ
に対し大きく拡張することができ、その外形寸法を収納
する記憶素子７と実質的に同一もしくはそれ以上となす
ことができる。そのため記憶素子７はその全面に紫外線
を照射することができ、記憶素子７内に記憶している情
報を完全に消去するとともに新たな情報を書き込むこと
ができ、記憶情報を任意のものに変更することが可能と
なる。For this purpose, for example, in the embodiment shown in FIG. 1, the ultraviolet transmitting glass 4 has a rectangular shape with each corner R rounded. Since the ultraviolet transmitting glass 4 is formed into a square (rectangular shape) in this way, the ultraviolet transmitting glass 4 is formed in the length direction B of the lid body 2.
It can be expanded to a large extent, and its external dimensions can be made substantially the same as or larger than the storage element 7 that accommodates it. Therefore, the entire surface of the memory element 7 can be irradiated with ultraviolet rays, and the information stored in the memory element 7 can be completely erased and new information can be written, changing the stored information to arbitrary information. becomes possible.
また紫外線透過ガラス４はその各角部Ｒが丸みを有して
いることから紫外線透過ガラス４の周囲を溶融し、蓋体
２の所定空所に接合させた場合、紫外線透過ガラス４の
固化に伴ない蓋体２との間に発生する応力は紫外線透過
ガラス４の角部Ｒに集中することなく周囲全体に拡散し
、該応力によって紫外線透過がラス４、特に紫外線透過
ガラス４の角部Ｒにクラックや割れを発生することは皆
無となり、蓋体２の所定空所内に強固に取着させること
が可能となる。Furthermore, since each corner R of the ultraviolet-transmitting glass 4 is rounded, when the periphery of the ultraviolet-transmitting glass 4 is melted and bonded to a predetermined space of the lid body 2, the ultraviolet-transmitting glass 4 will not solidify. The stress generated between the lid body 2 and the UV-transmitting glass 4 is not concentrated at the corner R of the UV-transmitting glass 4, but is diffused throughout the surrounding area, and due to this stress, UV transmission is reduced to the corner R of the UV-transmitting glass 4, especially the corner R of the UV-transmitting glass 4. There is no occurrence of cracks or cracks in the lid body 2, and it becomes possible to firmly attach the lid body 2 within the predetermined space.
尚、紫外線透過ガラス４の各角部Ｒに半径０．５〜３Ｑ
ｍｙｎの丸みを形成すると、紫外線透過ガラス４をク
ラックや割れ等発生することなく蓋体２に強固に取着で
きるので好適である。In addition, each corner R of the ultraviolet transmitting glass 4 has a radius of 0.5 to 3Q.
It is preferable to form the myin roundness because the ultraviolet-transmitting glass 4 can be firmly attached to the lid 2 without cracking or breaking.
（発明の効果）
以上の通り、本発明によれば紫外線透過ガラスを角部が
丸みを有する角型としたことＫより、その外形寸法を大
となすことができ、半導体記憶素子が大型化したとして
もその全面に紫外線を照射することが可能で、半導体記
憶素子内の記憶情報を任意に変更することができる。ま
た紫外線透過ガラスの蓋体との接合部にクラックや割れ
が発生するのが皆無であり、極めて気密性に優れた半導
体パッケージが得られる。(Effects of the Invention) As described above, according to the present invention, since the ultraviolet-transmitting glass is made into a square shape with rounded corners, its external dimensions can be increased, and the semiconductor memory element can be made larger. However, it is possible to irradiate the entire surface with ultraviolet rays, and the information stored in the semiconductor memory element can be changed arbitrarily. In addition, there are no cracks or fractures at the joint between the ultraviolet-transmitting glass and the lid, and a semiconductor package with extremely excellent airtightness can be obtained.
第１図は本発明の半導体パッケージを使用した半導体記
憶装置の斜視図、第２図は第１図のＸ−Ｘ線断面図、第
３図は従来の半導体パッケージを使用した半導体記憶装
置の斜視図、第４図は第３図Ｘ−Ｘ線断面図である。
１．１１−・絶縁基体 ２．１２−・・蓋体４．１３
−・紫外線透過ガラスFIG. 1 is a perspective view of a semiconductor storage device using the semiconductor package of the present invention, FIG. 2 is a sectional view taken along the line X-X of FIG. 1, and FIG. 3 is a perspective view of a semiconductor storage device using a conventional semiconductor package. FIG. 4 is a sectional view taken along the line XX in FIG. 3. 1.11-・Insulating base 2.12-・Lid body 4.13
−・Ultraviolet transmitting glass
Claims (1)
する半導体パッケージにおいて、前記蓋体の少なくとも
半導体素子が対向する部位に、角部に丸みを有する角型
の紫外線透過ガラスを設けたことを特徴とする半導体パ
ッケージ。In a semiconductor package consisting of an insulating base body and a lid body and housing a semiconductor element therein, a rectangular ultraviolet transmitting glass having rounded corners is provided at least in a portion of the lid body facing the semiconductor element. Characteristic semiconductor package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1285285A JPS61172352A (en) | 1985-01-26 | 1985-01-26 | Semiconductor package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1285285A JPS61172352A (en) | 1985-01-26 | 1985-01-26 | Semiconductor package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61172352A true JPS61172352A (en) | 1986-08-04 |
Family
ID=11816926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1285285A Pending JPS61172352A (en) | 1985-01-26 | 1985-01-26 | Semiconductor package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61172352A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5219077A (en) * | 1975-08-01 | 1977-01-14 | Owens Illinois Inc | Lead frame assembly |
| JPS5382139A (en) * | 1976-12-27 | 1978-07-20 | Fujitsu Ltd | Protection method for frasable read only memory |
| JPS5532005B2 (en) * | 1975-05-13 | 1980-08-22 | ||
| JPS6081844A (en) * | 1983-10-12 | 1985-05-09 | Fujitsu Ltd | Semiconductor device |
-
1985
- 1985-01-26 JP JP1285285A patent/JPS61172352A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5532005B2 (en) * | 1975-05-13 | 1980-08-22 | ||
| JPS5219077A (en) * | 1975-08-01 | 1977-01-14 | Owens Illinois Inc | Lead frame assembly |
| JPS5382139A (en) * | 1976-12-27 | 1978-07-20 | Fujitsu Ltd | Protection method for frasable read only memory |
| JPS6081844A (en) * | 1983-10-12 | 1985-05-09 | Fujitsu Ltd | Semiconductor device |
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