JPS6077423A - Controlling method for gap and alignment with double diffraction grating - Google Patents
Controlling method for gap and alignment with double diffraction gratingInfo
- Publication number
- JPS6077423A JPS6077423A JP58184433A JP18443383A JPS6077423A JP S6077423 A JPS6077423 A JP S6077423A JP 58184433 A JP58184433 A JP 58184433A JP 18443383 A JP18443383 A JP 18443383A JP S6077423 A JPS6077423 A JP S6077423A
- Authority
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- Prior art keywords
- signal
- gap
- diffracted
- diffraction grating
- lambda
- Prior art date
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- Granted
Links
- 238000000034 method Methods 0.000 title claims description 8
- 230000001427 coherent effect Effects 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 108010063499 Sigma Factor Proteins 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Control Of Position Or Direction (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体ＩＣやＬＳＩを製造するための露光装置
やバタン評価装置に利用されるギャップと位置の高精度
アライメントに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to highly accurate alignment of gaps and positions used in exposure devices and batten evaluation devices for manufacturing semiconductor ICs and LSIs.
半導体ＩＣやＬＳＩの微細化に伴い、マスクバクンをウ
ェハに一括しもしくはステップアンドリピート方式によ
って露光φ転写する装置において、マスクとウェハを互
いに高精度に位置合せする技術の確立は不可欠でありＸ
特に、サブミクロンバタンを露光・転写するＸ線露光装
置では高精度位置合せとともに、マスクとウェハ間のギ
ャップを高精度で一定値に設定する技術の確立が欠かせ
ないものと寿っている。With the miniaturization of semiconductor ICs and LSIs, it is essential to establish technology to align the mask and wafer with high precision in equipment that performs exposure φ transfer by batching the mask onto the wafer or using a step-and-repeat method.
In particular, for X-ray exposure equipment that exposes and transfers submicron patterns, it is essential to establish a technology that not only allows high-precision alignment but also sets the gap between the mask and the wafer to a constant value with high precision.
この一方式として、例えばＪ、 Ｖａｃ、 Ｓｃｌ、
Ｔｅａｈｎｏｌ、Ｖｏｌ、 １９．Ｎｏ、 ４．１９８
１ 、 Ｐ２１４で紹介されているように、０．１μｍ
以下の位置合せを行うことを目的として２重回折格子を
用いた位置合せ法の開発が進められている。この方法は
、第１図に示す第１の物体１に設けた第１の回折格子２
と、第２の物体３に設けた第２の回折格子４とを一定ギ
ャップ２をおいて重ね、これら第１および第２の回折格
子にコヒーレント光もしくは準単色光を垂直に入射し、
両回折格子によって入射光に対して対称的な方向に回折
された同次数の回折光、例えば＋１次の回折光の強度を
減算処理し、その差分強度の変化によって第１の物体と
第２の物体の相対変位を検出して位置合せするものであ
るが、第２図に示すように、ギャップのわずかの変化に
よって位置合せ信号が大きく変化するため実用は困難で
あった。すなわち、第２図は波長λ＝ ０．６３２８μ
ｍ１回折格子のピッチＰ＝２μｍとした場合について、
第１・第２の物体の位置ずれ量ｄ（μｍ）と上記差分強
度Δ■との関係を示したもので、図中（イ）、（ロ）、
（→がそれぞれギャップ２を６．１．６．２，６．３（
μｍ）とした場合に対応する。For example, J, Vac, Scl,
Teahnol, Vol. 19. No, 4.198
1. As introduced in P214, 0.1 μm
Development of an alignment method using a double diffraction grating is underway with the aim of performing the following alignment. This method uses a first diffraction grating 2 provided on a first object 1 shown in FIG.
and a second diffraction grating 4 provided on a second object 3 are stacked with a constant gap 2, and coherent light or quasi-monochromatic light is perpendicularly incident on these first and second diffraction gratings,
The intensity of the diffracted light of the same order, for example, the +1st order diffracted light, which is diffracted in a direction symmetrical to the incident light by both diffraction gratings, is subtracted, and the difference between the first object and the second object is determined by the change in the difference intensity. This method detects the relative displacement of an object and aligns it, but as shown in FIG. 2, it has been difficult to put it into practical use because the alignment signal changes greatly due to a slight change in the gap. That is, in Figure 2, the wavelength λ = 0.6328μ
Regarding the case where the m1 diffraction grating pitch P = 2 μm,
It shows the relationship between the positional deviation amount d (μm) of the first and second objects and the above-mentioned differential intensity Δ■, and in the figure (a), (b),
(→ are respectively gap 2 6.1.6.2, 6.3(
μm).
このような変化は、第１図に示した回折光のＡとＢ１す
なわち第１の物体１の裏面、すなわち回折格子２を設け
た面で反射する回折光Ａと、第１の物体１を通過し第２
の物体３で垂直に反射し、改めて第１の物体で回折する
光Ｂとの干渉の影響が原因しているものと考えられる。Such a change is caused by the difference between the diffracted lights A and B1 shown in FIG. 2nd
This is thought to be caused by the influence of interference with the light B which is vertically reflected by the first object 3 and diffracted again by the first object.
本発明は、このような事情に鑑みてなされたもので、そ
の目的は、ギャップ制御と位置合せ制御とを同時ｒかつ
高精度に行なうことが可能な２重回折格子によるギャッ
プ・位置合せ制御法を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to provide gap/alignment control using a double diffraction grating that allows gap control and alignment control to be performed simultaneously and with high precision. It is about providing law.
このような目的を達成するために、本発明は入射光に対
して対称的な方向に回折された、第１の物体の第１の回
折格子を設けた面で直接反射回折した光を含むすべての
同次数の回折光強度を加算処理し、この加算強度の変化
によってギャップおよび位置合せ制御を行なうものであ
る。In order to achieve such an object, the present invention is directed to all the light including the light directly reflected and diffracted by the surface of the first object provided with the first diffraction grating, which is diffracted in a direction symmetrical to the incident light. The intensities of the diffracted lights of the same order are added, and gap and alignment control is performed based on changes in the added intensities.
第３図は本発明の一実施例を示す構成図であり、１１は
ウェハ、１２けウェハに設けた回折格子、１３はマスク
、１４はマスクに設けた回折格子、１５はレーザ光源、
１６．１７は光電変換器、１８は信号処理制御部、１９
はマスク微調ステージ、２０はウェハ微調ステージを示
す。FIG. 3 is a configuration diagram showing an embodiment of the present invention, in which 11 is a wafer, 12 is a diffraction grating provided on the wafer, 13 is a mask, 14 is a diffraction grating provided on the mask, 15 is a laser light source,
16. 17 is a photoelectric converter, 18 is a signal processing control unit, 19
2 represents a mask fine adjustment stage, and 20 represents a wafer fine adjustment stage.
上記構成において、レーザ光源１５から発したコヒーレ
ント光は、真空吸着ホルダーによって保持されるマスク
１３上の回折格子１４に入射する。In the above configuration, coherent light emitted from the laser light source 15 is incident on the diffraction grating 14 on the mask 13 held by the vacuum suction holder.
マスクの回折格子によって回折した光は、微調ステージ
２０上に保持されるウェハ１１上に作成された回折格子
１２で反射し、ｂ度マスク上の回折格子１４を通過する
。The light diffracted by the diffraction grating of the mask is reflected by the diffraction grating 12 formed on the wafer 11 held on the fine adjustment stage 20, and passes through the diffraction grating 14 on the b degree mask.
これらウェハおよびマスクの回折格子で回折した光のう
ち、＋１次と一１次の回折光のみを光電変換器１６．１
７で受け、その光強度を電気信号に変換する。Of the light diffracted by the diffraction gratings of the wafer and mask, only the +1st and 11th order diffracted lights are transferred to the photoelectric converter 16.1.
7 and converts the light intensity into an electrical signal.
次に、信号処理部１８で＋１次の回折光強度１−４−、
と−１次の回折光強度ｉ−１を加算し、ΣＩ−Ｉ 十、
＋ Ｉ−、をめる。Next, in the signal processing unit 18, the +1st order diffracted light intensity 1-4-,
and -1st order diffracted light intensity i-1, ΣI-I ten,
+I-, turn on.
この加算強度ΣＩのギャップ２に対する変化は、第４図
に示すようにｐ’ｌ、ｙλごとにピークをもつ信号と、
マスク１３の裏面、すなわち回折格子１４を設けた面に
おける反射の影響で生ずるλ／２を周期とする信号とが
重畳した信号として示される。The change in the added strength ΣI with respect to gap 2 is a signal that has a peak at each p'l and yλ as shown in FIG.
The signal is shown as a superimposed signal with a signal having a period of λ/2 that is generated due to the influence of reflection on the back surface of the mask 13, that is, the surface on which the diffraction grating 14 is provided.
Ｐ２／λ＋２ｐｋλ・・・でピークをもつ信号は、マス
ク裏面での反射を零とした理想条件下で得られるもので
あシ、この信号は、偽で変化する信号を積分器等によっ
て処理することにより、その包絡線として得ることがで
きる。したがって、との包絡線を監視しながらその最大
値にマスク・ウェー１間のギャップ２を調整することに
よって、Ｐンλ 。The signal having a peak at P2/λ+2pkλ... is obtained under ideal conditions with zero reflection on the back side of the mask, and this signal must be processed by processing a false and changing signal using an integrator, etc. can be obtained as its envelope. Therefore, by adjusting the gap 2 between mask ways 1 to its maximum value while monitoring the envelope of P and λ.
２Ｐ２ 、・・・のギャップ値に設定することが可能と
／λ
なる。もし、上記包絡線の最大値近傍が緩やかな変化を
示す場合には、さらに微分値をとるなどの処理を行なう
ことによって、最大値の検出を容易にすることができる
。It is possible to set the gap value to 2P2, . . . /λ. If the vicinity of the maximum value of the envelope shows a gradual change, the maximum value can be easily detected by further processing such as taking a differential value.
さらに、この包絡線の最大値はし′２の周期をもつ信号
のピーク値と一致もしくは±２／４の範囲内で一致する
。このため、このシ２の周期をもつ信号をフィードバッ
ク信号として用いることによつλ
て、±／４以下の精度でギャップ制御が可能となる。す
なわち、第４図において、Ｐ／λごとにピークをもつ信
号（イ）を粗合せ信号としてその最大点を検出し、さら
にシ２を周期とする信号（ロ）を微合せ信号として、領
域Ｇで微合せ制御を行なうことができる。Furthermore, the maximum value of this envelope coincides with the peak value of the signal having a period of 2' or within a range of ±2/4. Therefore, by using this signal having a period of 2 as a feedback signal, gap control can be performed with an accuracy of ±/4 or less. That is, in FIG. 4, the signal (A) having a peak for each P/λ is used as a rough combination signal to detect its maximum point, and the signal (B) whose period is C2 is used as a fine combination signal to detect the area G. Fine adjustment control can be performed with .
次に、このようなギャップ条件での位置ずれ量に対する
加算強度Σ■の変化は、第５図に示すようにずれ量が／
２のときに最大、０のときに最小を示す。この傾向は同
図に示すようにギャップが１μｍ程度変化しても変わら
ず、その最大、最小値をとる位置ずれ量は＃１とんど変
化しない。すなわち、第５図において、（イ）、（ロ）
、（ハ）はそれぞれギャップ２が１４．２２，１４．７
２，１５．２２（μｍ）の場合の位置ずれ量ｄと加算強
度Σ■との関係を示す。Next, the change in the additional strength Σ■ with respect to the amount of positional deviation under such gap conditions is as shown in Figure 5, when the amount of deviation is /
2 indicates the maximum, and 0 indicates the minimum. As shown in the figure, this tendency does not change even if the gap changes by about 1 μm, and the positional deviation amount #1 that takes the maximum and minimum values hardly changes. That is, in Figure 5, (a) and (b)
, (c) have gap 2 of 14.22 and 14.7, respectively.
The relationship between the positional deviation amount d and the addition strength Σ■ in the case of 2.15.22 (μm) is shown.
なお、回折格子のピッチＰは３．０μｍである。したが
って、この加算強度Σ■は位置合せ信号としても十分に
使用可能である。すなわち、ギャップ合せ信号の最大値
で位置ずれを起こさせ、位置ずれ量が／２のときに位置
合せ信号が最大となる。Note that the pitch P of the diffraction grating is 3.0 μm. Therefore, this added strength Σ■ can be sufficiently used as an alignment signal. That is, the positional deviation is caused by the maximum value of the gap alignment signal, and the alignment signal becomes maximum when the positional deviation amount is /2.
このため、予めウェハとマスクに作製した回折格子マー
クを７２分だけずらして設けておけば、ギャップ、位置
ともΣ工の最大値を検出するととによって高精度に合せ
ることが可能となる。あるいはまた、はじめにギャップ
を設定した後、位置ずれ変化の最小値に合せることによ
って、位置合せが可能となる。For this reason, if the diffraction grating marks made on the wafer and the mask are provided in advance so as to be shifted by 72 minutes, it becomes possible to match both the gap and the position with high precision by detecting the maximum value of the Σ-factor. Alternatively, alignment can be achieved by first setting a gap and then adjusting it to the minimum value of the change in positional deviation.
これらいずれの方法でも位置合せは可能であるが、格子
のラインアンドスペースが１；１がら太きくずれる場合
には、位置の最小値検出の方が有利である。Alignment is possible using any of these methods, but if the lines and spaces of the grating are deviated by 1:1, detection of the minimum position value is more advantageous.
以上の２つのギャップと位置の合せを交互に行なうこと
によって、マスク、ウェハ上の１対の回折格子から位置
、ギャップの同時検出が可能となる。By alternately performing the above two gap and position alignments, it becomes possible to simultaneously detect the position and gap from a pair of diffraction gratings on the mask and wafer.
以上、１次回折光を利用した場合を例に説明したが、本
発明はこれに限定されるものではなく、よシ高次の回折
光を利用しても同様の効果を得ることができる。また、
上述した実施例ではマスク。Although the case where the first-order diffracted light is used has been described above, the present invention is not limited to this, and the same effect can be obtained even if a higher-order diffracted light is used. Also,
In the embodiments described above, a mask.
ウェハにそれぞれ１つの回折格子マークを作製した場合
につい−Ｃのみ説明したが、例えば特開昭５３−２２７
５９号において説明されているようにＸ、Ｔ軸方向に直
交する回折格子を１組としてマーりを作製すると、”
ｌ ”Ｎ１１両方向について同時にギャップ設定および
位置合せ制御ができ、さらにもう１つのマークを別に設
けることにょシマスク、ウェハ間の平行度をきわめて高
精度に１ｉｉｌＪ御できる。また、レーザ光源から発す
るコヒーレント光の代りに準単色′＞Ｃを用いても同様
の効果が得られる。Although only -C has been described for the case where one diffraction grating mark is manufactured on each wafer, for example, Japanese Patent Laid-Open No. 53-227
As explained in No. 59, when a beam is created using a set of diffraction gratings orthogonal to the X and T axis directions, "
Gap setting and alignment control can be performed simultaneously in both directions, and by providing another mark, the parallelism between the mask and wafer can be controlled with extremely high precision. A similar effect can be obtained by using quasi-monochromatic '>C instead.
以上説明したように、本発明によれば、２重回折格子に
垂直に入射した光に対し、対称的な方向に回折された同
次数の回折光強度を、第１の物体の回折格子を設けた面
で直接反射回折した光を含めて加力処理し、その加算強
度を用いることによって、ギャップの高イ′青度設定・
制御が可能となるとともに、高精度な位置合せも同時に
可能とな勺、簡単な格子マークによって１００Ａオーダ
の位置・ギャップ設定を行なうことができる。As explained above, according to the present invention, for light incident perpendicularly on a double diffraction grating, the intensity of diffracted light of the same order diffracted in a symmetrical direction is transferred to the diffraction grating of the first object. By applying force including the light directly reflected and diffracted by the provided surface, and using the added intensity, it is possible to set a high blueness of the gap.
Positions and gaps on the order of 100A can be set using simple grid marks that allow control and highly accurate positioning at the same time.
第１図は２重回折位置合せ法の原理図、第２図社従来の
差分強度を用いた位置合せ信号を示す図、第３図は本発
明の一実施例を示す構成図、第４図はギャップ合せ信号
としての加算強度信号を示す図、第５図は位置合せ信号
としての加算強度信号を示す図である。
１１−−−・ウェハ（ｉ２の物体）、１２・・・・ウェ
ハ上に設けた回折格子（第２の回折格子）、１３・−の
・マスク（第１の物体）、１４・・争・マスクに設けた
回折格子（第１の回折格子）、ｌ ５ｅｅ＊ｓレーザ光
源、１６，１γ５ｅｅｓ光電変換器、１８・・・・信号
処理部、１９・・・・マスク微調ステージ、２０ＩＩＩ
Ｉ・・ウェハ微調ステージ。
特許出願人 日本電信電話公社
代理人山 川政樹Fig. 1 is a diagram showing the principle of the double diffraction alignment method, Fig. 2 is a diagram showing a conventional alignment signal using differential intensity, Fig. 3 is a configuration diagram showing an embodiment of the present invention, and Fig. 4 is a diagram showing the alignment signal using the conventional differential intensity. The figure shows an added intensity signal as a gap alignment signal, and FIG. 5 shows an added intensity signal as a position alignment signal. 11--- Wafer (i2 object), 12... Diffraction grating provided on the wafer (second diffraction grating), 13... Mask (first object), 14... Conflict... Diffraction grating provided on the mask (first diffraction grating), l5ee*s laser light source, 16,1γ5ees photoelectric converter, 18...signal processing section, 19...mask fine adjustment stage, 20III
I...Wafer fine adjustment stage. Patent applicant Masaki Yamakawa, agent of Nippon Telegraph and Telephone Public Corporation
Claims (1)
けたＭ２の回折格子とを一定のギャップをおいて重ね、
これら第１および第２の回折格子にコヒーレント光もし
くは準単色光を入射し、両回折格子によって生じた回折
光の強度の変化によって第１の物体と第２の物体の相対
変位を検出して位置合せする装置において、前記コヒー
レント光もしくは準単色光を第１の物体に垂直に入射さ
せ、入射光に対して対称的な方向に回折された、第１の
物体の第１の回折格子を設けた面で直接反射回折した光
を含むすべての同次数の回折光強度を加算処理し、この
加算強度の変化によって第１の物体と第２の物体間のギ
ャップを制御するとともに第１の物体と第２の物体の相
対変位を検出し位置合せ制御することを特徴とする２重
回折格子によるギャップ・位置合せ制御法。A first diffraction grating provided on a first object and an M2 diffraction grating provided on a second object are overlapped with a certain gap,
Coherent light or quasi-monochromatic light is incident on these first and second diffraction gratings, and the relative displacement of the first object and the second object is detected by the change in the intensity of the diffracted light generated by both diffraction gratings, and the position of the object is determined. In the combining device, the coherent light or quasi-monochromatic light is incident on the first object perpendicularly, and a first diffraction grating of the first object is provided, which is diffracted in a direction symmetrical to the incident light. The intensities of all the diffracted lights of the same order, including the light directly reflected and diffracted by the surface, are summed, and the gap between the first object and the second object is controlled by changing the summed intensity, and the gap between the first object and the second object is controlled. A gap/alignment control method using a double diffraction grating, which is characterized by detecting the relative displacement of two objects and controlling the alignment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58184433A JPS6077423A (en) | 1983-10-04 | 1983-10-04 | Controlling method for gap and alignment with double diffraction grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58184433A JPS6077423A (en) | 1983-10-04 | 1983-10-04 | Controlling method for gap and alignment with double diffraction grating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6077423A true JPS6077423A (en) | 1985-05-02 |
| JPH0460331B2 JPH0460331B2 (en) | 1992-09-25 |
Family
ID=16153064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58184433A Granted JPS6077423A (en) | 1983-10-04 | 1983-10-04 | Controlling method for gap and alignment with double diffraction grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077423A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013400A (en) * | 2004-06-29 | 2006-01-12 | Canon Inc | Method and apparatus for detecting relative positional deviation between two objects |
| JP2010183075A (en) * | 2009-02-04 | 2010-08-19 | Asml Netherlands Bv | Imprint lithography |
| JP2011029538A (en) * | 2009-07-29 | 2011-02-10 | Toshiba Corp | Method of manufacturing semiconductor device |
-
1983
- 1983-10-04 JP JP58184433A patent/JPS6077423A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013400A (en) * | 2004-06-29 | 2006-01-12 | Canon Inc | Method and apparatus for detecting relative positional deviation between two objects |
| JP2010183075A (en) * | 2009-02-04 | 2010-08-19 | Asml Netherlands Bv | Imprint lithography |
| US8248608B2 (en) | 2009-02-04 | 2012-08-21 | Asml Netherlands B.V. | Imprint lithography |
| JP2011029538A (en) * | 2009-07-29 | 2011-02-10 | Toshiba Corp | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0460331B2 (en) | 1992-09-25 |
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