JPH0295203A - Aligning device - Google Patents
Aligning deviceInfo
- Publication number
- JPH0295203A JPH0295203A JP63248141A JP24814188A JPH0295203A JP H0295203 A JPH0295203 A JP H0295203A JP 63248141 A JP63248141 A JP 63248141A JP 24814188 A JP24814188 A JP 24814188A JP H0295203 A JPH0295203 A JP H0295203A
- Authority
- JP
- Japan
- Prior art keywords
- diffraction gratings
- wafer
- diffraction
- diffraction grating
- vernier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005286 illumination Methods 0.000 claims abstract description 10
- 230000001427 coherent effect Effects 0.000 claims abstract description 8
- 239000011295 pitch Substances 0.000 claims description 13
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 9
- 238000005259 measurement Methods 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体の露光装置などに用い、近接した回折
格子からの回折光により微小変位を検出し、マスク、ウ
エノ・などの位置合わせを行う位置合わせ装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is used in semiconductor exposure equipment, etc., to detect minute displacements using diffracted light from nearby diffraction gratings, and to adjust the position of masks, wafers, etc. This invention relates to a matching device.
従来の技術
従来、この種の位置合わせ装置において、近接した複数
の回折格子からの回折光により微小変化を読み取る方式
としては、光波術コンタク）Ｖｏ１２５ Ｎｏ、７（１
９８７） ３７５頁に記載されているＸ線リソグラ
フィ用マスク、ウニ／・の立置合わせ装置が知られてい
る。μ下、この従来の位置合わせ装置について図面を参
照しながら説明する。2. Description of the Related Art Conventionally, in this type of positioning device, a method for reading minute changes using diffracted light from a plurality of adjacent diffraction gratings has been proposed as described in the method of optical wave technique contact) Vo125 No. 7 (1).
987) A device for vertical alignment of an X-ray lithography mask and a sea urchin described on page 375 is known. Below, this conventional positioning device will be explained with reference to the drawings.
第６図に示すように横ゼーマンレーザ１０１から出射し
た光１０２は、偏光ビームスプリッタ１０３によって周
波数ｆ１の光Ｆ１と周波数ｆ２の光Ｆ２に分割され、ミ
ラー１０４ 、１０５によってマスク１０６、ウェハ１
０７に角度θで照射される。マスク１０６及びウェハ１
０７の被照射領域には、ピッチＰの回折格子１０８ 、
１０９が形成されている。光Ｆｌ。As shown in FIG. 6, the light 102 emitted from the transverse Zeeman laser 101 is split into light F1 with a frequency f1 and light F2 with a frequency f2 by a polarizing beam splitter 103.
07 at an angle θ. Mask 106 and wafer 1
In the irradiated area 07, a diffraction grating 108 with a pitch P,
109 is formed. Light Fl.
Ｆ２は各々ｓｉｎθ＝λ／Ｐ（λ：レーザ波長）なる方
向より照射されているため、光Ｆ’ｌ 、 Ｆ２の回折
格子１０８ 、１０９による±１次回折光は、マスク１
０６、ウェハ１０７の平面に対して垂直方向に回折され
、ミラー１１０により２つの７オトデイテクタ１１１
、１１２へ入射する。ここで入射光として互いにわずか
に周波数が異なるＦｌ、Ｆ２の光を用いているため、フ
ォトディテクタ１１１では、マスク１０６の位置ずれに
よる光ビート信号が、ディテクタ１１２ではウェハ１０
７の位置ずれによる光ビート信号が検出される。これら
の２つの光ビート信号の位相差をＯとすることにより、
マスク１０６とウェハ１０７の相対立置合わせを行うこ
とが可能となる。Since F2 is irradiated from the direction of sin θ = λ/P (λ: laser wavelength), the ±1st-order diffracted light of the lights F'l and F2 by the diffraction gratings 108 and 109 is
06, is diffracted in a direction perpendicular to the plane of the wafer 107, and is detected by two 7-photodetectors 111 by a mirror 110.
, 112. Here, since the lights Fl and F2, which have slightly different frequencies from each other, are used as incident lights, the photodetector 111 receives an optical beat signal due to the positional shift of the mask 106, and the detector 112 receives the optical beat signal from the wafer 106.
An optical beat signal due to the positional deviation of 7 is detected. By setting the phase difference between these two optical beat signals as O,
It becomes possible to perform relative alignment of the mask 106 and the wafer 107.
半導体の露光装置では、数１０ミリ離れたマスク１０６
とウェハ１０７上の位置合わせマークを数１０ｍｍの精
度で位置合わせしなければならない。このため、レーザ
渉計をフィードバック検出器として持つ粗合わせテーブ
ルと、第６図に示したような位置合わせ装置をフィード
バック検出器として持つ精密合わせテーブルの２段構成
とするのが一般的である。In semiconductor exposure equipment, the mask 106 is placed several tens of millimeters away.
The alignment marks on the wafer 107 must be aligned with an accuracy of several tens of millimeters. For this reason, it is common to have a two-stage configuration of a rough alignment table having a laser interferometer as a feedback detector and a fine alignment table having a positioning device as shown in FIG. 6 as a feedback detector.
発明が解決しようとする課題
しかしながら、上記従来例の構成で得られる位置ずれ信
号は回折格子１０８ 、１０９のピッチの半分を一周期
とする周期信号となり、粗合わせチーフルはこの周期の
範囲内にウェハ１０７とマスク１０６を位置合わせしな
ければならず、最終的な位置合わせ精度を上げようとす
ればするほど、粗合わせテーブルの精度負担が重くなる
という課題があった０
本発明は、従来技術のμ上のような課題を解決するもの
で、マスク、ウェハなどの位置ずれ計測範囲を拡大する
ことができ、したがって、最終位置合わせ精度が上がっ
ても、粗合わせテーブルに要求される機械精度負担を軽
減することができ、粗合わせテーブルのコストの低下を
図ることができるようにした位置合わせ装置を提供する
ことを目的とするものである。Problems to be Solved by the Invention However, the positional deviation signal obtained with the configuration of the conventional example described above is a periodic signal in which one period is half the pitch of the diffraction gratings 108 and 109, and the coarsely aligned chifur is a wafer within this period. 107 and the mask 106, and as the final alignment accuracy is increased, the accuracy burden on the rough alignment table becomes heavier. This solves the problem of μ, and can expand the measurement range of positional misalignment of masks, wafers, etc. Therefore, even if the final positioning accuracy increases, the load on the mechanical accuracy required for the rough alignment table can be reduced. It is an object of the present invention to provide an alignment device that can reduce the cost of a rough alignment table.
課題を解決するための手段
上記目的を達成するための本発明の技術的手段は、ピッ
チの異なる２つの回折格子を有し、可干渉な光束をそれ
ぞれ２分割するバーニア型基準回折格子と、２分割され
た回折光を集光する照明レンズと、第１と第２の物体に
それぞれ設けられ、ピッチが異なり、近接した２つの回
折格子を有し、上記照明レンズによる各２分割された回
折光の照射により上記各回折格子から回折光を生じる第
１と第２のバーニア型回折格子と、これら第１と第２の
バーニア型回折格子の各回折格子より生じる回折角が等
しい回折光を集光する正のパワーを有するレンズと、こ
のレンズにより結像された各回折光を受光する分割型フ
ォトディテクタを具備したものである。Means for Solving the Problems The technical means of the present invention for achieving the above object includes: a Vernier-type reference diffraction grating that has two diffraction gratings with different pitches and each divides a coherent light beam into two; an illumination lens that condenses the divided diffracted light, and two diffraction gratings provided on the first and second objects, each having a different pitch and close to each other, each of which is divided into two by the illumination lens; A first and second Vernier type diffraction grating that generates diffracted light from each of the diffraction gratings by irradiation of This device is equipped with a lens having a positive power of 100 nm, and a segmented photodetector that receives each diffracted light imaged by the lens.
作 用 本発明、上記構成により次のような作用を有する。For production The present invention has the following effects with the above configuration.
可干渉な光をバーニア型基準回折格子のピッチの異なる
２つの回折格子によりそれぞれ分割し。Coherent light is split by two diffraction gratings with different pitches of a Vernier type reference diffraction grating.
各２分割した回折光を照明レンズにより集光し、第１と
第２の物体に設けられた第１と第２のバーニア型回折格
子におけるピッチを異にする近接した２つの回折格子に
より回折光を生じさせ、各回折光を結像レンズにより分
割型フォトディテクタに集光させることにより、第１と
第２の物体の位置ずれに対応した信号を得てこの周期の
差により第１と第２の物体の位置ずれ計測範囲を拡大す
ることができる。The diffracted light divided into two is condensed by an illumination lens, and the diffracted light is generated by two adjacent diffraction gratings with different pitches in the first and second Vernier type diffraction gratings provided on the first and second objects. By causing each diffracted light to be focused on a segmented photodetector using an imaging lens, a signal corresponding to the positional shift between the first and second objects is obtained, and this period difference is used to detect the difference between the first and second objects. It is possible to expand the measurement range of object positional deviation.
実施例
以下１本発明の実施例について図面を参照しながら説明
する。Embodiment One embodiment of the present invention will be described below with reference to the drawings.
第１図ないし第５図は本発明の一実施例における位置合
わせ装置を示し、第１図は全体の概略斜視図、第２図は
バーニア型基準回折格子の拡大斜視図、第３図はマスク
とウェハのバーニア型回折格子の拡大斜視図、第４図は
分割型フォトディテクタの拡大斜視図、第５図は信号処
理動作の説明図である。1 to 5 show an alignment device according to an embodiment of the present invention, FIG. 1 is a schematic perspective view of the whole, FIG. 2 is an enlarged perspective view of a Vernier type reference grating, and FIG. 3 is a mask. FIG. 4 is an enlarged perspective view of a Vernier type diffraction grating of a wafer, FIG. 4 is an enlarged perspective view of a segmented photodetector, and FIG. 5 is an explanatory diagram of a signal processing operation.
第１図において、１はマスクであり、マスク搬送手段（
図示省略）により搬送され、光学手段（図示省略）等に
より調整されて露光位置に配置される。２はウェハであ
り、ウェハ搬送手段（図示省略）により搬送され、光学
手段（図示省略）等によりウエノ・ステージ３上に粗い
（ｌｆｆｌ置決めが行われる。ウェハステージ３は駆動
手段（図示省略）によりＸ、Ｙの直交方向に移動される
と共に、θ方向に回転される０４は可干渉な光束を出射
するレーザ、５はレーザ４から出射された光束を反射す
るミラー ６は反射された光束をそれぞれ２分割するバ
ーニア型基準回折格子であり、第２図に示すように微妙
にピッチの異なる２つの回折格子６１と６２が互いに近
接して平行に設けられている。In FIG. 1, 1 is a mask, and the mask conveying means (
(not shown), and is adjusted by an optical means (not shown) or the like and placed at an exposure position. A wafer 2 is transported by a wafer transport means (not shown), and roughly (lffl) placed on a wafer stage 3 by an optical means (not shown) or the like.The wafer stage 3 is driven by a driving means (not shown). 04 is a laser that emits a coherent light beam, 5 is a mirror that reflects the light beam emitted from the laser 4, and 6 is a mirror that reflects the reflected light beam. This is a Vernier type reference diffraction grating that is divided into two parts, and as shown in FIG. 2, two diffraction gratings 61 and 62 with slightly different pitches are provided in parallel and close to each other.
７はマスク１に設けられた第１のバーニア型回折格子、
８はウェハ２に設けられた第２のバーニア型回折格子で
あり、これら第１と第２のバーニア型回折格子７と８は
第３図に示すようにそれぞれピッチを微妙に異にし、互
いに接近して平行な２つの回折格子７１ 、７２と８１
．８２とからなる。９は照明レンズであり、バーニア型
基準回折格子６の各回折格子６１ 、６２で分割された
２つの光束を集光し、第１と第２のバーニア型回折格子
７と８の回折格子７１ 、７２と８１．８２に特定の角
度で照射する。１０は正のパワーを有する結像レンズで
あり、第１と第２のバーニア型回折格子７と８の各回折
格子７１ 、７２と８１ 、８２から生じ、回折角が等
しい回折光を集光する。１１は結像レンズ１０により結
像されたバーニア型回折格子７と８の回折格子７１ 、
７２と８１ 、８２の像を反射するミラー１２は反射さ
れた像を検出する４分割型フォトディテクタであり、第
４図に示すように４つの受光素子１２ａを有する。１３
は４分割フォトディテクタ１２で検出された信号をマス
ク１とウェハ２の位置ずれ信号に変換する信号処理装置
である。7 is a first Vernier type diffraction grating provided on the mask 1;
8 is a second Vernier type diffraction grating provided on the wafer 2, and these first and second Vernier type diffraction gratings 7 and 8 have slightly different pitches and are placed close to each other as shown in FIG. two parallel diffraction gratings 71, 72 and 81
．． It consists of 82. Reference numeral 9 denotes an illumination lens, which condenses the two light beams divided by the respective diffraction gratings 61 and 62 of the Vernier type reference diffraction grating 6, and condenses the two beams divided by the diffraction gratings 71 and 62 of the first and second Vernier type diffraction gratings 7 and 8. 72 and 81. Irradiate 82 at a specific angle. Reference numeral 10 denotes an imaging lens having positive power, which condenses the diffracted lights generated from the respective diffraction gratings 71, 72 and 81, 82 of the first and second Vernier type diffraction gratings 7 and 8 and having the same diffraction angle. . 11 is a diffraction grating 71 of Vernier type diffraction gratings 7 and 8 which is imaged by the imaging lens 10;
The mirror 12 that reflects the images 72, 81, and 82 is a four-segment photodetector that detects the reflected images, and has four light receiving elements 12a as shown in FIG. 13
is a signal processing device that converts a signal detected by the four-segment photodetector 12 into a positional deviation signal between the mask 1 and the wafer 2.
次に上記実施例の動作について説明する。Next, the operation of the above embodiment will be explained.
レーザ４から出射した可干渉な光は、ミラー５によりバ
ーニア型基準回折格子６に反射される。Coherent light emitted from the laser 4 is reflected by a mirror 5 onto a Vernier type reference diffraction grating 6.
第２図に示すようにバーニア基準回折格子６０回折格子
６１と６２のピッチはそれぞれＰとａＰに設定されてい
る（本実施例ではａ＝１．１）。そして上記可干渉な光
は回折格子６１と回折格子６２の両方だ照射され、その
結果、２分割された１次回折光６３ 、６４と６５ 、
６６を生じる。第３図に示すようにマスク１の第１のバ
ーニア型回折格子７の回折格子７１と７２およびウェハ
２の第２のバーニア型回折格子８の回折格子８１と８２
のピンチは上記と同様にそれぞれＰとａＰに設定されて
いる。第２図に示した１次回折光６３と６４は照明レン
ズ９によりマスク１の回折格子７１、ウエノ・２の回折
格子８１上に集光され、回折光７３ 、８３を生じる。As shown in FIG. 2, the pitches of the Vernier reference diffraction grating 60 and the diffraction gratings 61 and 62 are set to P and aP, respectively (a=1.1 in this embodiment). The above-mentioned coherent light is irradiated to both the diffraction grating 61 and the diffraction grating 62, and as a result, the first-order diffracted light beams 63, 64 and 65 are divided into two,
66. As shown in FIG. 3, diffraction gratings 71 and 72 of the first Vernier grating 7 of the mask 1 and diffraction gratings 81 and 82 of the second Vernier grating 8 of the wafer 2 are shown.
The pinches of are set to P and aP, respectively, in the same way as above. The first-order diffraction lights 63 and 64 shown in FIG. 2 are focused by the illumination lens 9 onto the diffraction grating 71 of the mask 1 and the diffraction grating 81 of the Ueno-2, producing diffraction lights 73 and 83.
一方、第２図に示した回折光６５と６６も照明レンズ９
によりマスクｌの回折格子７２、ウエノ１の回折格子８
２上に集光され、回折光７４ 、８４を生じる。バーニ
ア型基準回折格子６により生じる回折光６３．６４と６
５ 、６６のなす角は異なっているが、照射レンズ９を
用いているため、マスク１、ウェハ２上の同一位置の回
折格子に集光することができる。回折光７３ 、８３％
７４ 、８４は結像レンズ１０によりミラー１１を介し
て第４図に示す４分割型フォトディテクタ１２に受光素
子１２ａにそれぞれ集光される。信号処理装＃１３は本
実施例では、回折光の位相遅れを検出できるようにヘテ
ロダイン検波方式を用いている。したがって、第５図に
示すようにマスク１とウエノＳ２の位置ずれＸに対応し
て信号Ｂ （Ｘ）、Ｃ（Ｘ）が得られる。Ｂ （Ｘ）は
周期Ｌ）／２で繰り返す周期信号であり、Ｃ（Ｘ）は周
期ａ Ｐ ／ ２で繰り返す周期信号である。このため
、この周期以上の位置ずれは計測することができない。On the other hand, the diffracted lights 65 and 66 shown in FIG.
The diffraction grating 72 of the mask l, the diffraction grating 8 of the ueno 1
2, producing diffracted beams 74 and 84. Diffracted light 63, 64 and 6 generated by Vernier type reference diffraction grating 6
Although the angles formed by the beams 5 and 66 are different, since the irradiation lens 9 is used, the light can be focused on the diffraction grating at the same position on the mask 1 and the wafer 2. Diffracted light 73, 83%
The light beams 74 and 84 are focused by the imaging lens 10 via the mirror 11 onto the light receiving element 12a of the four-segment photodetector 12 shown in FIG. In this embodiment, the signal processing device #13 uses a heterodyne detection method so that the phase delay of the diffracted light can be detected. Therefore, as shown in FIG. 5, signals B(X) and C(X) are obtained corresponding to the positional deviation X between the mask 1 and the wet cloth S2. B(X) is a periodic signal that repeats with a period L)/2, and C(X) is a periodic signal that repeats with a period a P /2. Therefore, positional deviations longer than this cycle cannot be measured.
そこで、信号Ｂ （Ｘ）とＣ（Ｘ）の差を取ると、この
匝はＰ／２÷（ａ−１）の周期信号となり、本実施例で
は、ａ＝１．１であるので、Ｐ／２の１０倍の範囲で立
置ずれを計測することが可能となる。Therefore, if we take the difference between signals B (X) and C (X), this signal becomes a periodic signal of P/2÷(a-1), and in this example, since a=1.1, P It becomes possible to measure the vertical displacement in a range 10 times larger than /2.
このように本実施例によれば、位置ずれの計測範囲を容
易に拡大することができるので、ウェハ２とマスク１を
位置ずれ計測範囲内に位置決めするための粗合わせテー
ブルに対する精度要求が緩やかになる。このため、粗合
わせテーブルの構成を簡単にすることができ、コストを
低下させることができる。また、将来予想される更に高
い位置合わせ精度要求に対しても、粗合わせテーブルを
現状の精度のままで使用することができるので、大変有
効である。As described above, according to this embodiment, the measurement range of positional deviation can be easily expanded, so that the accuracy requirements for the rough alignment table for positioning the wafer 2 and the mask 1 within the measurement range of positional deviation can be relaxed. Become. Therefore, the configuration of the rough adjustment table can be simplified and costs can be reduced. Furthermore, it is very effective to meet future demands for even higher alignment accuracy because the rough alignment table can be used with its current accuracy.
発明の詳細
な説明したように本発明によれば、可干渉な光をバーニ
ア型基準回折格子のピッチの異なる２つの回折格子によ
りそれぞれ分割し、各２分割した回折光を照明レンズに
より集光し、第１と第２の物体に設けられた第１と第２
のバーニア型回折格子におけるピッチを異にする近接し
た２つの回折格子により回折光を生じさせ、各回折光を
結像レンズにより分割型フォトディテクタに集光させる
ことにより、第１と第２の物体の位置ずれに対応した信
号を得てこの周期の差により第１と第２の物体の位置ず
れ計測範囲を拡大することができる。このように、第１
と第２の物体であるマスクとウェハなどの位置ずれ計測
範囲を大きくすることができることにより、マスクとウ
ェハなどを位置ずれ計測範囲内に位置決めするための粗
合わせテーブルに要求される機械精度要求を低くするこ
とができる。したがって、粗合わせテーブルのコストを
低下させることができ、また、将来位置合わせ精度が高
まっても粗合わせテーブルに対する負担を軽減すること
ができる０DETAILED DESCRIPTION OF THE INVENTION According to the present invention, coherent light is divided by two diffraction gratings with different pitches of a vernier reference diffraction grating, and each of the two divided diffracted lights is focused by an illumination lens. , first and second objects provided on the first and second objects
Diffracted light is generated by two adjacent diffraction gratings with different pitches in the Vernier type diffraction grating, and each diffracted light is focused on a split photodetector using an imaging lens, thereby detecting the difference between the first and second objects. A signal corresponding to the positional deviation is obtained, and the measurement range of the positional deviation between the first and second objects can be expanded based on the difference in period. In this way, the first
By increasing the measurement range of the positional deviation of the second object, such as a mask and a wafer, the mechanical precision required for a rough alignment table for positioning the mask and wafer within the measurement range of positional deviation can be reduced. It can be lowered. Therefore, the cost of the rough alignment table can be reduced, and even if alignment accuracy increases in the future, the burden on the rough alignment table can be reduced.
【図面の簡単な説明】
第１図ないし第５図は本発明の一実施例における位置合
わせ装置を示し、第１図は全体の概略斜視図、第２図は
バーニア型基準回折格子の拡大斜視図、第３図はマスク
とウェハのバーニア型回折格子の拡大斜視図、第４図は
分割型フォトディテクタの拡大斜視図、第５図は信号処
理動作の説明図、第６図は従来の位置合わせ装置を示す
概略斜視図である。
１・・・マスク、２・・・ウェハ ３・・・ウェハステ
ージ、４・・・レーザ、６・・・バーニア型基準回折格
子、７・・・第１のバーニア型回折格子、８−・第２の
バーニア型回折格子、９・・・照明レンズ、１０・・・
結像レンズ。
１２・・・４分割型フォトディテクタ、１３・・・信号
処理装置、６１．６２．７１．７２．８１．８２・・・
回折格子。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名第２
図
旦
第
ｊ
図
第５
図
＼
５２可耽り
マス７
？７幻＼召唖で立ｌ
第
図
第・３
図[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1 to 5 show a positioning device according to an embodiment of the present invention, FIG. 1 is a schematic perspective view of the whole, and FIG. 2 is an enlarged perspective view of a Vernier type reference diffraction grating. Figure 3 is an enlarged perspective view of the Vernier diffraction grating of the mask and wafer, Figure 4 is an enlarged perspective view of the split photodetector, Figure 5 is an explanatory diagram of the signal processing operation, and Figure 6 is the conventional alignment. FIG. 2 is a schematic perspective view showing the device. DESCRIPTION OF SYMBOLS 1... Mask, 2... Wafer 3... Wafer stage, 4... Laser, 6... Vernier type reference grating, 7... First Vernier type diffraction grating, 8--th Vernier diffraction grating 2, 9... illumination lens, 10...
imaging lens. 12... Four-segment photodetector, 13... Signal processing device, 61.62.71.72.81.82...
Diffraction grating. Name of agent: Patent attorney Shigetaka Awano and 1 other person 2nd
Figure Dan No. J Figure 5 Figure ＼ 52 Possible Square 7? 7 Illusions ＼Shoumu de Tate l Fig. 3
Claims (1)
をそれぞれ２分割するバーニア型基準回折格子と、２分
割された回折光を集光する照明レンズと、第１と第２の
物体にそれぞれ設けられ、ピッチが異なり、近接した２
つの回折格子を有し、上記照明レンズによる各２分割さ
れた回折光の照射により上記各回折格子から回折光を生
じる第１と第２のバーニア型回折格子と、これら第１と
第２のバーニア型回折格子の各回折格子より生じる回折
角が等しい回折光を集光する正のパワーを有するレンズ
と、このレンズにより結像された各回折光を受光する分
割型フォトディテクタを具備した位置合わせ装置。A vernier type reference diffraction grating that has two diffraction gratings with different pitches and divides each coherent light beam into two, an illumination lens that focuses the two divided diffracted lights, and a first and second object, respectively. 2 which are arranged, have different pitches and are close
first and second vernier-type diffraction gratings each having two diffraction gratings and generating diffracted light from each of the two diffraction gratings by irradiation of each two-split diffraction light by the illumination lens; A positioning device comprising a lens having a positive power that condenses diffracted light having the same diffraction angle generated by each diffraction grating of a molded diffraction grating, and a split photodetector that receives each diffracted light imaged by the lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63248141A JPH0295203A (en) | 1988-09-30 | 1988-09-30 | Aligning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63248141A JPH0295203A (en) | 1988-09-30 | 1988-09-30 | Aligning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0295203A true JPH0295203A (en) | 1990-04-06 |
Family
ID=17173834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63248141A Pending JPH0295203A (en) | 1988-09-30 | 1988-09-30 | Aligning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0295203A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040005216A (en) * | 2002-07-09 | 2004-01-16 | 오수익 | Image acquisition system for aligning two micro objects |
| JP2012220458A (en) * | 2011-04-14 | 2012-11-12 | Canon Inc | Encoder |
| US9121731B2 (en) | 2011-04-14 | 2015-09-01 | Canon Kabushiki Kaisha | Encoder having a scale with two areas in which an increasing direction of the amplitude of the energy distribution is opposite between the two areas for precisely obtaining a position of the scale |
| US9354089B2 (en) | 2011-04-14 | 2016-05-31 | Canon Kabushiki Kaisha | Encoder |
-
1988
- 1988-09-30 JP JP63248141A patent/JPH0295203A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040005216A (en) * | 2002-07-09 | 2004-01-16 | 오수익 | Image acquisition system for aligning two micro objects |
| JP2012220458A (en) * | 2011-04-14 | 2012-11-12 | Canon Inc | Encoder |
| US9121731B2 (en) | 2011-04-14 | 2015-09-01 | Canon Kabushiki Kaisha | Encoder having a scale with two areas in which an increasing direction of the amplitude of the energy distribution is opposite between the two areas for precisely obtaining a position of the scale |
| US9354089B2 (en) | 2011-04-14 | 2016-05-31 | Canon Kabushiki Kaisha | Encoder |
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