JPH01107102A - Optical automatic positioning apparatus - Google Patents
Optical automatic positioning apparatusInfo
- Publication number
- JPH01107102A JPH01107102A JP62263554A JP26355487A JPH01107102A JP H01107102 A JPH01107102 A JP H01107102A JP 62263554 A JP62263554 A JP 62263554A JP 26355487 A JP26355487 A JP 26355487A JP H01107102 A JPH01107102 A JP H01107102A
- Authority
- JP
- Japan
- Prior art keywords
- light
- diffraction grating
- diffraction
- wafer
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 11
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 230000001427 coherent effect Effects 0.000 claims abstract description 4
- 238000006073 displacement reaction Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 23
- 239000011295 pitch Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HYIMSNHJOBLJNT-UHFFFAOYSA-N nifedipine Chemical group COC(=O)C1=C(C)NC(C)=C(C(=O)OC)C1C1=CC=CC=C1[N+]([O-])=O HYIMSNHJOBLJNT-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
く゛産業上の利用分野〉
本発明は２物体間の相対位置を、回折格子を含む光学系
を利用して決める光学式自動位置決め装置に関するもの
である。。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an automatic optical positioning device that determines the relative position between two objects using an optical system including a diffraction grating. .
〈従来の技術〉
半導体製造装置やパターン評価装置等において、例えば
第一の基板と第二の基板とにそれぞれ回折格子を設け、
これら２枚１組の回折格子の反射光から得られるモアレ
信号を用いて、双方の基板の相対位置を精度よく決定す
ることが行われており、特開昭６０−６７８２２号公報
に記載されているように高分解能の位置決め信号が得ら
れる利点がある。<Prior art> In semiconductor manufacturing equipment, pattern evaluation equipment, etc., for example, diffraction gratings are provided on each of a first substrate and a second substrate,
Moiré signals obtained from the reflected light from a pair of these two diffraction gratings are used to accurately determine the relative positions of both substrates, as described in Japanese Patent Application Laid-Open No. 60-67822. It has the advantage of being able to obtain high-resolution positioning signals.
例えば、第８図に示すように半導体製造の露光工程等に
おいて、第一基板たるマスク１００と第二基板たるウェ
ハ１０２とに、回折格子Ａ＋Ａｚと回折格子Ｂ＋Ｂ＊と
の２ｍを取り付ける。これらの回折格子は、第９図に示
すようにいずれもピッチＰの一次元回折格子で、位置決
め方向において、回折格子ＡｌＡｔの組とＢＩＢｔＯ組
とがそれぞれ反対方向にＰ／４ずつ位相がずらされてい
る。マスク側の格子Ａ＋Ｂ＋で回折を受けてウェハ側の
格子ＡｚＢｔに達した光は、その格子Ａ。For example, as shown in FIG. 8, in the exposure process of semiconductor manufacturing, etc., 2 m of diffraction gratings A+Az and B+B* are attached to a mask 100 as a first substrate and a wafer 102 as a second substrate. As shown in FIG. 9, these diffraction gratings are all one-dimensional diffraction gratings with a pitch of P, and in the positioning direction, the phases of the diffraction grating AlAt group and the BIBtO group are shifted by P/4 in opposite directions. ing. The light that is diffracted by the grating A+B+ on the mask side and reaches the grating AzBt on the wafer side is the grating A.
Ｂ２で再び回折を受けて入射方向へ戻っていく。It undergoes diffraction again at B2 and returns to the direction of incidence.
この光はマスク１００とウェハ１０２との横方向の相対
変位によって周期的に変化する第１０図に示すようなモ
アレ信号■。＋ ＩＩに変換されるが、この例では回
折格子Ａ＋ＡｔとＢ、 Ｂｔとの各位相差により、１８
０°位相の異なる信号となる。This light is a moiré signal (2) as shown in FIG. 10, which changes periodically depending on the relative displacement in the lateral direction between the mask 100 and the wafer 102. +II, but in this example, due to the phase difference between the diffraction gratings A+At, B, and Bt, 18
The signals have a 0° phase difference.
そしてこれら二つの信号の差（Ｉａ −Ｉｍ ）がゼロ
となるように位置決めを行うのである。この例で２組の
回折格子を用いる目的は、回折光の強度変化が最大とな
る点で検出するためであり、また、入射方向へ戻ってい
く０次回折光以外に、±１次回折光や±２次回折光等を
利用しても、同様な方法での位置決めが可能となる。Then, positioning is performed so that the difference (Ia - Im) between these two signals becomes zero. The purpose of using two sets of diffraction gratings in this example is to detect the point where the intensity change of the diffracted light is maximum, and in addition to the 0th-order diffracted light that returns to the incident direction, the ±1st-order diffracted light and the ±1st-order diffracted light Positioning can be performed in a similar manner by using second-order diffracted light or the like.
〈発明が解決しようとする問題点〉
ところで、マスク側の第一の格子Ａ３等で直接回折を受
けて入射方向に戻る光があり、この第一の格子Ａ１等の
みを経由する光は位置決めつまり位置ズレの検出には関
与しないものである。一方、第一の格子Ａ１等を経由し
てウェハ例の第二の格子Ａ２等で回折を受け、再び第一
の格子Ａ１等を経由して入射方向に戻る光は位置ズレの
検出に寄与するものである。しかし、第一の格子Ａ９等
のみで直接回折を受けた位置ズレに無関係な光が、第一
および第二の格子Ａ、Ａ２等を経由した位置ズレを検出
する光と干渉を起こし、その結果、位置ズレ検出のため
のモアレ信号が乱されてしまって、正しい位置へのアラ
イメントが困難になる問題があった。<Problems to be Solved by the Invention> By the way, there is light that is directly diffracted by the first grating A3 etc. on the mask side and returns to the incident direction, and the light that passes only through this first grating A1 etc. It is not involved in detecting positional deviation. On the other hand, the light that passes through the first grating A1, etc., undergoes diffraction at the second grating A2, etc. of the wafer example, and returns to the incident direction via the first grating A1, etc. again contributes to the detection of positional deviation. It is something. However, the light unrelated to the positional shift that has been directly diffracted only by the first grating A9, etc., interferes with the light that detects the positional shift via the first and second gratings A, A2, etc., and as a result, There was a problem in that the moiré signal for detecting positional deviation was disturbed, making it difficult to align to the correct position.
これは、上述のようにＯ次回折光を利用する場合だけで
なく、±１次回折光、±２次回折光など高次の回折光を
利用する場合でも同様に生じる問題である。This problem occurs not only when O-order diffracted light is used as described above, but also when higher-order diffracted light such as ±1st-order diffracted light and ±2nd-order diffracted light is used.
く問題点を解決するための手段〉
本発明は以上のような問題を解決するためになされたも
のであり、その特徴は、■第一部材に設けられた第一の
回折格子およびこれと平行に第二部材に設けられた第二
の回折格子と、■第一の回折格子にレーザ光等のコヒー
レントな光を照射する光源と、■第一の回折格子を経由
して第二の回折格子で反射し、再び第一の回折格子を経
由する回折光をモアレ信号として検出する検出装置と、
■位置決め方向において第一部材と第二部材との相対位
置を調整する駆動装置と、■上記モアレ信号に基づいて
駆動装置を制御する駆動制御手段とを備え、第一部材と
第二部材との相対位置を決める光学式自動位置決め装置
において、上記第二の回折格子に、第一部材と第二部材
との位置決め方向と直角な方向において線型フレネルゾ
ーンプレートを形成した点にある。Means for Solving the Problems> The present invention has been made to solve the above problems, and its features include: (1) a first diffraction grating provided on the first member; a second diffraction grating provided on the second member; ■ a light source that irradiates coherent light such as a laser beam to the first diffraction grating; and ■ a second diffraction grating that passes through the first diffraction grating. a detection device that detects the diffracted light that is reflected by the first diffraction grating and passes through the first diffraction grating again as a moiré signal;
(1) A drive device that adjusts the relative position of the first member and the second member in the positioning direction; (2) A drive control means that controls the drive device based on the moiré signal; In the optical automatic positioning device for determining relative positions, a linear Fresnel zone plate is formed on the second diffraction grating in a direction perpendicular to the positioning direction of the first member and the second member.
すなわち、第一の回折格子は従来と同様に位置決め方向
において一定のピッチで格子が形成されたものであり、
一方、第二の回折格子は位置決め方向においては第一の
回折格子に対応するピッチの格子パターンとされるが、
位置決め方向と直角な方向においては線型フレネルゾー
ンプレートが形成されたものなのである。この線型フレ
ネルゾーンプレートは、−次元フレネル帯板とも称され
、周知のように光の透過度分布が段階的に減少するパタ
ーンを有して集光作用を有するものである。That is, the first diffraction grating is a grating formed at a constant pitch in the positioning direction as in the conventional case,
On the other hand, the second diffraction grating has a grating pattern with a pitch corresponding to that of the first diffraction grating in the positioning direction.
In a direction perpendicular to the positioning direction, a linear Fresnel zone plate is formed. This linear Fresnel zone plate is also called a -dimensional Fresnel zone plate, and, as is well known, has a pattern in which the light transmittance distribution decreases in stages and has a light condensing effect.
〈作用および効果〉
この線型フレネルゾーンプレートがいわばレンズのよう
な集光機能を果たすため、第一の回折格子のみを経由し
た回折光の出射方向と、第一の回折格子のみならず第二
の回折格子をも経由した回折光の出射方向とが異ならさ
れる。言い換えれば、第一の回折格子のみを経由した位
置ズレ検出に関与しない光信号と、第一および第二双方
の回折格子を経由した位置ズレ検出用光信号とが切り離
されるのである。したがって、位置ズレ検出に関与しな
い信号が位置ズレ検出信号と干渉することが回避されて
、干渉による乱れのない正規のパターンのモアレ信号が
得られる。そのため高精度の位置決めが可能となるので
ある。<Functions and Effects> Since this linear Fresnel zone plate performs a light focusing function like a lens, the output direction of the diffracted light passing only through the first diffraction grating and the second diffraction grating as well as the first diffraction grating The emitting direction of the diffracted light that has also passed through the diffraction grating is made different. In other words, the optical signal that is not involved in positional deviation detection and that has passed through only the first diffraction grating is separated from the optical signal for positional deviation detection that has passed through both the first and second diffraction gratings. Therefore, signals not involved in positional deviation detection are prevented from interfering with the positional deviation detection signal, and a regular pattern of moiré signals without disturbance due to interference can be obtained. Therefore, highly accurate positioning is possible.
〈実 施 例〉 以下、本発明の一実施例を図面に基づいて説明する。<Example> Hereinafter, one embodiment of the present invention will be described based on the drawings.
第４図は半導体製造におけるＸ線露光装置の位置決め機
構部に本発明を適用した例を示すものである。第一部材
としてのＸ線マスク１０と第二部材としてのウェハ１２
とが、それぞれマスクステージ１４とウェハステージ１
６とに互いに平行に固定され、何れかのステージ例えば
マスクステージ１４が横方向に移動可能とされて、マス
ク１０とウェハ１２との位置決め方向における相対位置
が調節可能である。マスク１０側にはＸ線発生装置１８
が設置され、そのＸ線の照射によりマスク１０によって
規定されるパターンでウェハ１２上に露光されるように
なっている。FIG. 4 shows an example in which the present invention is applied to a positioning mechanism of an X-ray exposure apparatus used in semiconductor manufacturing. X-ray mask 10 as a first member and wafer 12 as a second member
are mask stage 14 and wafer stage 1, respectively.
6 are fixed parallel to each other, and any stage, for example, the mask stage 14, is movable in the lateral direction, so that the relative positions of the mask 10 and the wafer 12 in the positioning direction can be adjusted. An X-ray generator 18 is located on the mask 10 side.
is installed, and the wafer 12 is exposed to the X-rays in a pattern defined by the mask 10.
マスク１０には第一の回折格子として機能するマスク側
回折格子２０が設けられ、ウェハ１２には第二の回折格
子として機能するウェハ側回折格子２２が互いに平行に
設けられている。これらは詳しい図示は省略するが、回
折光の強度変化が最大となる点で位置検出を行い得るよ
うに２組のものが設置されている。The mask 10 is provided with a mask-side diffraction grating 20 that functions as a first diffraction grating, and the wafer 12 is provided with wafer-side diffraction gratings 22 that function as a second diffraction grating in parallel with each other. Although detailed illustrations of these are omitted, two sets are installed so that position detection can be performed at the point where the intensity change of the diffracted light is maximum.
マスク側回折格子２０にコヒーレントな光、すなわち位
相・波長がそろった干渉を起こしやすい光を照射する光
源として、例えばヘリウム−ネオン（Ｈｅ−Ｎｅ）レー
ザを発生するレーザ光源２４が設置されている。ここか
らのレーザ光はミラー２６で反射され、ハーフミラ−２
８を経てマスク側回折格子２０に照射されて、その格子
２０およびウェハ側回折格子２２で回折を受け、入射方
向へ戻っていく。この回折光はステージ１４の横方向の
変位に対してのみ敏感に強度が変化するモアレ光である
。このモアレ光はハーフミラ−２８で直角に曲げられ、
光検出器（ディテクタ部）３０でサイン波状の電気信号
つまりモアレ信号に変換される。このモアレ信号は信号
処理装置３２で処理され、制御信号として駆動信号発生
装置３４へ指令を与える。それにより、駆動信号発生装
置３４から積層圧電素子３６へ駆動信号が供給され、積
層圧電素子３６がマスクステージ１４を所定位置まで移
動させる。モアレ信号が所定の強度となったとき、例え
ば先に説明したように１８０°位相の異なるモアレ信号
の出力差（Ｉａ Ｉｍ）がゼロになったとき、位置決
め完了であり、その後Ｘ線発生装置１８によりウェハ１
２にＸ線が照射され、所定パターンでレジストが感光さ
れるのある。A laser light source 24 that generates, for example, a helium-neon (He-Ne) laser is installed as a light source that irradiates the mask-side diffraction grating 20 with coherent light, that is, light that has the same phase and wavelength and is likely to cause interference. The laser beam from here is reflected by the mirror 26, and the half mirror 2
8, the light is irradiated onto the mask-side diffraction grating 20, is diffracted by the grating 20 and the wafer-side diffraction grating 22, and returns to the incident direction. This diffracted light is moiré light whose intensity changes sensitively only with respect to the lateral displacement of the stage 14. This moiré light is bent at a right angle by a half mirror 28,
A photodetector (detector unit) 30 converts the signal into a sine wave electric signal, that is, a moiré signal. This moiré signal is processed by the signal processing device 32 and gives a command to the drive signal generating device 34 as a control signal. Thereby, a drive signal is supplied from the drive signal generator 34 to the laminated piezoelectric element 36, and the laminated piezoelectric element 36 moves the mask stage 14 to a predetermined position. When the moire signal reaches a predetermined intensity, for example, when the output difference (Ia Im) of the moire signals with a 180° phase difference becomes zero as explained earlier, positioning is complete, and then the X-ray generator 18 Wafer 1
2 is irradiated with X-rays, and the resist is exposed in a predetermined pattern.
本実施例では光検出器３０が、マスク側回折格子２０お
よびウェハ側回折格子２２を経由した回折光をモアレ信
号として検出する検出装置を構成している。また、積層
圧電素子３６がマスク１０とウェハ１２との位置決め方
向における相対位置を調整する駆動装置を構成し、さら
に信号処理装置３２と駆動信号発生装置３４とが、上述
のモアレ信号に基づいて積層圧電素子３６を制御する駆
動制御手段を構成している。In this embodiment, the photodetector 30 constitutes a detection device that detects the diffracted light that has passed through the mask-side diffraction grating 20 and the wafer-side diffraction grating 22 as a moiré signal. Further, the laminated piezoelectric element 36 constitutes a drive device that adjusts the relative position of the mask 10 and the wafer 12 in the positioning direction, and furthermore, the signal processing device 32 and the drive signal generation device 34 act on the laminated piezoelectric element 36 based on the above-mentioned moiré signal. It constitutes a drive control means for controlling the piezoelectric element 36.
第１図にマスク側回折格子２０とウェハ側回折格子２２
との具体的な格子パターンを示す。マスクステージ１４
の変位方向、換言すればマスク１０とウェハ１２との位
置決め方向を図中Ｘ方向とすると、マスク側回折格子２
０はＸ方向において等ピッチで光透過部と光吸収部が交
互に表れる格子パターンとされている。一方、ウェハ側
回折格子２２は、Ｘ方向においてはマスク側回折格子２
０と同一のピッチで格子が形成されているが、これと直
角なＹ方向においては線型フレネルゾーンプレートが形
成されて、透過度分布が段階的に減少するパターンとさ
れている。すなわち、マスク側回折格子２０は従来通り
の一次元回折格子であるが、ウェハ側回折格子２２はＸ
方向には等ピッチの透過度分布とされ、Ｙ方向には不等
ピンチおよびパターンのフレネルゾーンプレートとされ
た二次元回折格子となっているのである。FIG. 1 shows a mask-side diffraction grating 20 and a wafer-side diffraction grating 22.
A specific grid pattern is shown. mask stage 14
If the displacement direction of the mask 10 and the wafer 12, in other words the positioning direction of the mask 10 and the wafer 12, is the X direction in the figure, then the mask side diffraction grating 2
0 is a lattice pattern in which light transmitting parts and light absorbing parts appear alternately at equal pitches in the X direction. On the other hand, the wafer-side diffraction grating 22 is different from the mask-side diffraction grating 2 in the X direction.
A grating is formed with the same pitch as 0, but in the Y direction perpendicular to this, a linear Fresnel zone plate is formed, resulting in a pattern in which the transmittance distribution decreases in stages. That is, the mask-side diffraction grating 20 is a conventional one-dimensional diffraction grating, but the wafer-side diffraction grating 22 is
It is a two-dimensional diffraction grating with a transmittance distribution of equal pitch in the Y direction and a Fresnel zone plate with unequal pinch and pattern in the Y direction.
第１図の下段には、不等ピッチの透過・吸収パターンが
Ｙ方向に５本記載されているが、その１本１本をフレネ
ルゾーンプレートとみることができ、その見地に立てば
、本実施例においてはＹ方向に延びるフレネルゾーンプ
レートがＸ方向に等ピッチで複数形成されていると見る
ことができる。In the lower part of Figure 1, five transmission/absorption patterns with uneven pitches are shown in the Y direction, each of which can be seen as a Fresnel zone plate, and from that point of view, the book In the embodiment, it can be seen that a plurality of Fresnel zone plates extending in the Y direction are formed at equal pitches in the X direction.
線型フレネルゾーンプレートは、いわば円筒レンズのよ
うに光を集光する性質を有していることは既に知られて
いるところである。本実施例においては第２図に示すＯ
次回折光を位置決めに利用するのであるが、第３図に概
念的に示すように、マスク側回折格子２０を経由してウ
ェハ側回折格子２２で反射する回折光を、フレネルゾー
ンプレートの集光作用によりＸ方向において集光しつつ
、再度マスク側回折格子２０を経由させ、その光学系の
焦点位置に設置されたディテクタたる光検出器３０によ
って（実際にはミラー２８で光経路が曲げられた後であ
るが）、モアレ信号となるべき再回折格子２０および２
２を経た光を効率よく取り入れることができる。本実施
例の場合、０次回折光の利用であるから信号強度が高く
、Ｓ／Ｎ比の向上１位置決め精度の向上を図ることがで
きる。It is already known that a linear Fresnel zone plate has the property of condensing light like a cylindrical lens. In this example, O shown in FIG.
The next diffraction light is used for positioning, and as conceptually shown in FIG. While condensing the light in the X direction, the light is passed through the mask-side diffraction grating 20 again, and then the light is collected by the photodetector 30, which is a detector installed at the focal point of the optical system (actually, after the light path is bent by the mirror 28). ), the re-diffraction gratings 20 and 2 which should become moiré signals
Light that has passed through step 2 can be efficiently taken in. In the case of this embodiment, since the 0th order diffracted light is used, the signal strength is high, and it is possible to improve the S/N ratio and the positioning accuracy.
従来の回折格子パターンの不都合は、第５図の左側に示
すように、マスク側回折格子Ａ、のみで回折を受けたマ
スク側回折光と、マスク側およびウェハ側双方の回折格
子Ａ、およびＡ２で回折を受けたウェハ側回折光との飛
び先つまり出射方向が同じであり、両回折光の干渉が起
こることにあった。これに対して本実施例では、第５図
の右側に示すように、線型フレネルゾーンプレートの集
光作用により、ウェハ側回折光の出射方向とマスク側回
折光の出射方向とが異なる方向とされて、これらの回折
光が完全に分離されるため、上述の干渉の問題が解消し
、マスク１０とウェハ１２とを完全に平行に保ったまま
、正確な位置決めができるのである。The disadvantage of the conventional diffraction grating pattern is that, as shown on the left side of FIG. The destination of the diffracted light on the wafer side, that is, the direction of the emitted light, is the same, and interference between the two diffracted lights may occur. On the other hand, in this embodiment, as shown on the right side of FIG. 5, due to the light condensing effect of the linear Fresnel zone plate, the emitting direction of the wafer-side diffracted light and the emitting direction of the mask-side diffracted light are made to be different directions. Since these diffracted lights are completely separated, the above-mentioned interference problem is solved, and accurate positioning can be performed while keeping the mask 10 and the wafer 12 completely parallel.
そして、マスク１０とウェハ１２とがＸ方向において相
対的に移動させられると、ウェハ側回折格子２２のゾー
ンプレート部をマスク側回折格子２０が遮る・程度が周
期的に変化するため、マスク側回折格子２０を経てウェ
ハ側回折格子２２で反射する光の強度も周期的に変化す
る。したがって、従来と同様に第１０図に示すようなサ
イン波状のモアレ信号が得られ、これを位置決め信号と
して使うことができる。When the mask 10 and the wafer 12 are moved relative to each other in the X direction, the zone plate portion of the wafer side diffraction grating 22 is blocked by the mask side diffraction grating 20. Since the extent changes periodically, the mask side diffraction The intensity of the light that passes through the grating 20 and is reflected by the wafer-side diffraction grating 22 also changes periodically. Therefore, as in the conventional case, a sine wave moiré signal as shown in FIG. 10 is obtained, and this can be used as a positioning signal.
なお、ウェハ１２をマスク１０に対して位置決め方向と
直角なＸ方向に相対的に変位させると、ウェハ側回折格
子２２の集光作用を奏するフレネルゾーンプレートがＸ
方向に変位し、いわば円筒レンズを動かす場合と同様に
、その光学系の焦点位置がＸ方向に変位することとなる
。このことを利用してＸ方向の比較的粗い位置決めを行
うことができる。つまり、Ｘ方向には微調整の位置決め
を、Ｘ方向には粗調整用の位置決めをそれぞれ行い得る
のである。Note that when the wafer 12 is displaced relative to the mask 10 in the
The focal position of the optical system is displaced in the X direction, so to speak, similar to when moving a cylindrical lens. Utilizing this fact, relatively rough positioning in the X direction can be performed. In other words, positioning for fine adjustment can be performed in the X direction, and positioning for coarse adjustment can be performed in the X direction.
以上は本来の位置決め方向をＸ方向に設定した場合であ
るが、第６図および第７図に示すような１組の４分割回
折格子を、それぞれマスク側回折格子４０およびウェハ
側回折格子４２として用いることにより、互いに直交す
るＸ方向とＸ方向の２方向で同時に位置決めを行うこと
ができる。マスク側回折格子４０は、Ｘ方向位置決め用
の格子部Ａ Ｘ ＋およびＡＸ２と、Ｘ方向位置決め用
の格子部ＡＹ、およびＡＹ、とが、格子中心に関してそ
れぞれ対称となるように形成されている。何れの格子部
も、中間部のパターンは省略して示すが（回折格子４２
側についても同じ）、第１図に示す回折格子２０と同様
のパターンのものである。The above is a case where the original positioning direction is set in the X direction, but a set of four-part diffraction gratings as shown in FIGS. 6 and 7 are used as the mask-side diffraction grating 40 and the wafer-side diffraction grating 42, respectively. By using this, positioning can be performed simultaneously in two directions, the X direction and the X direction, which are perpendicular to each other. The mask-side diffraction grating 40 is formed such that the grating portions A X + and AX2 for X-direction positioning and the grating portions AY and AY for X-direction positioning are symmetrical with respect to the grating center. In both grating parts, the pattern in the middle part is omitted (diffraction grating 42
The same applies to the sides), and the pattern is similar to that of the diffraction grating 20 shown in FIG.
ウェハ側回折格子４２は、Ｘ方向位置決め用の格子部Ｂ
Ｘ、およびＢＸ、と、Ｘ方向位置決め用の格子部ＢＹ、
およびＢＹ２とが、いずれも線型フレネルゾーンプレー
トとして格子中心に関しそれぞれ対称に形成されている
。個々の格子部そのものは第１図に示す回折格子２２と
同じパターンとされている。そして、Ｘ方向位置決め用
の格子部ＡＸ、、ＡＸ！およびＢＸ、、ＢＸ２が対応し
、またＸ方向位置決め用の格子部ＡＹ、、ＡＹ２および
ＢＹ、、ＢＹ、が対応するように、各４分割回折格子４
０および４２がマスク１０およびウェハ１２に互いに平
行に設けられ、それによってＸ方向およびＸ方向の位置
決め用の各モアレ信号が得られるのである。The wafer-side diffraction grating 42 is a grating portion B for positioning in the X direction.
X, and BX, and a lattice part BY for positioning in the X direction,
and BY2 are each formed as linear Fresnel zone plates symmetrically with respect to the lattice center. The individual grating portions themselves have the same pattern as the diffraction grating 22 shown in FIG. Then, the lattice portions AX,, AX! for positioning in the X direction. and BX, , BX2 correspond to each other, and the grating portions AY, , AY2 and BY, , BY for positioning in the X direction correspond to each other.
0 and 42 are provided in parallel to each other on the mask 10 and the wafer 12, thereby obtaining respective moiré signals for positioning in the X direction and the X direction.
以上説明した実施例では０次回折光を利用しているが、
０次のものに限らず、例えば第２図に示す±１次の回折
光等、高次の回折光を利用する場合でも、本発明は同様
に適用することができる。In the embodiment described above, the 0th order diffracted light is used, but
The present invention can be similarly applied even when using not only zero-order diffracted light but also higher-order diffracted light, such as the ±1st-order diffracted light shown in FIG. 2, for example.
また、本発明はＸ線露光装置における位置決めに限らず
、その他の光学式露光装置あるいは縮小投影型露光装置
（ステッパ）、さらにはＸ線マスク検査装置（例えば特
願昭６１−８３９１号公報に開示のもの）など、各種装
置における位置決めに適用することができる。また、位
置決めの対象についても、マスクおよびウェハ以外の２
基板間、さらには基板以外の２部材間の位置決めにも適
用可能である。Furthermore, the present invention is applicable not only to positioning in an X-ray exposure apparatus, but also to other optical exposure apparatuses or reduction projection exposure apparatuses (steppers), and even to X-ray mask inspection apparatuses (for example, disclosed in Japanese Patent Application No. 8391/1982). It can be applied to positioning in various devices such as In addition, regarding the positioning target, two types other than masks and wafers may be used.
It is also applicable to positioning between substrates, and even between two members other than substrates.
その他、逐一説明はしないが、本発明は当業者の知識に
基づき種々の変更を施した態様で実施し得ることは勿論
である。Although not described in detail, it goes without saying that the present invention can be implemented with various modifications based on the knowledge of those skilled in the art.
第１図は本発明の一実施例における第一および第二の回
折格子たるマスク側回折格子およびウェハ側回折格子を
示す斜視図であり、第２図は第１図における■祖国、第
３図は同じく■祖国である。
第４図は本発明の適用対象の一例であるＸ線露光装置の
全体を概念的に示す図である。第５図は従来の回折格子
と本発明に係る回折格子との機能の違いを比較して示す
説明図である。第６図および第７図は、マスク側回折格
子およびウェハ側回折格子にそれぞれ４分割回折格子を
使用する例を示す平面図である。第８図は基板位置決め
用回折格子の従来例を示す正面図であり、第９図はそれ
ら格子のパターンを示す平面図である。第１０図は位置
決めに供されるモアレ信号の例を示す図である。
１０：マスク １２：ウエハ１４：マスクス
テージ １６：ウエハステージ１８：Ｘ線発生装置
２０：マスク側回折格子
２２：ウェハ側回折格子
２４：レーザ光源 ２６：ミラー２８：ハーフ≦
ラー ３０：光検出器３２：信号処理装置
３４：駆動信号発生装置 ３６：積層圧電素子出願人
株式会社 豊田自動織機製作所第１図
瓜
第２図 第３図
０１視）（［ネ覧）
第４図
第５図
第８図 第９図
第１０図FIG. 1 is a perspective view showing a mask-side diffraction grating and a wafer-side diffraction grating, which are first and second diffraction gratings in an embodiment of the present invention, and FIG. is also ■homeland. FIG. 4 is a diagram conceptually showing the entirety of an X-ray exposure apparatus, which is an example of an object to which the present invention is applied. FIG. 5 is an explanatory diagram comparing and showing the difference in function between a conventional diffraction grating and a diffraction grating according to the present invention. FIG. 6 and FIG. 7 are plan views showing examples in which four-part diffraction gratings are used as the mask-side diffraction grating and the wafer-side diffraction grating, respectively. FIG. 8 is a front view showing a conventional example of a diffraction grating for substrate positioning, and FIG. 9 is a plan view showing a pattern of the grating. FIG. 10 is a diagram showing an example of a moiré signal used for positioning. 10: Mask 12: Wafer 14: Mask stage 16: Wafer stage 18: X-ray generator 20: Mask side diffraction grating 22: Wafer side diffraction grating 24: Laser light source 26: Mirror 28: Half ≦
30: Photodetector 32: Signal processing device 34: Drive signal generator 36: Multilayer piezoelectric element applicant
Toyoda Automatic Loom Works Co., Ltd. Figure 1 Figure 2 Figure 3 Figure 01 view) Figure 4 Figure 5 Figure 8 Figure 9 Figure 10
Claims (1)
行に第二部材に設けられた第二の回折格子と、 第一の回折格子にレーザ光等のコヒーレントな光を照射
する光源と、 第一の回折格子を経由して第二の回折格子で反射し、再
び第一の回折格子を経由する回折光をモアレ信号として
検出する検出装置と、 位置決め方向において第一部材と第二部材との相対位置
を調整する駆動装置と、 前記モアレ信号に基づいて駆動装置を制御する駆動制御
手段と を備え、第一部材と第二部材との相対位置を決める光学
式自動位置決め装置において、 前記第二の回折格子に、前記第一部材と第二部材との位
置決め方向と直角な方向において線型フレネルゾーンプ
レートを形成した特徴とする光学式自動位置決め装置。[Claims] A first diffraction grating provided on the first member, a second diffraction grating provided parallel to the first diffraction grating on the second member, and a coherent light such as a laser beam applied to the first diffraction grating. a detection device that detects the diffracted light that passes through the first diffraction grating, is reflected by the second diffraction grating, and passes through the first diffraction grating again as a moiré signal; An optical automatic device that determines the relative position of the first member and the second member, comprising a drive device that adjusts the relative position between the member and the second member, and a drive control means that controls the drive device based on the moiré signal. An optical automatic positioning device, wherein a linear Fresnel zone plate is formed on the second diffraction grating in a direction perpendicular to the positioning direction of the first member and the second member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62263554A JPH01107102A (en) | 1987-10-19 | 1987-10-19 | Optical automatic positioning apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62263554A JPH01107102A (en) | 1987-10-19 | 1987-10-19 | Optical automatic positioning apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01107102A true JPH01107102A (en) | 1989-04-25 |
Family
ID=17391160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62263554A Pending JPH01107102A (en) | 1987-10-19 | 1987-10-19 | Optical automatic positioning apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01107102A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002088637A1 (en) * | 2001-04-26 | 2002-11-07 | Creo Srl | Absolute moire type position encoder for use in a control system |
| JP2006332677A (en) * | 2005-05-27 | 2006-12-07 | Asml Netherlands Bv | Imprint lithography |
| JP2008522412A (en) * | 2004-11-30 | 2008-06-26 | モレキュラー・インプリンツ・インコーポレーテッド | Interference analysis to produce nanoscale devices |
| JP2010267682A (en) * | 2009-05-12 | 2010-11-25 | Bondtech Inc | Device and method for alignment, and semiconductor device |
| JP2017204539A (en) * | 2016-05-10 | 2017-11-16 | キヤノン株式会社 | Position detector, position detection method, imprint device and manufacturing method of article |
| KR20190100951A (en) * | 2016-12-23 | 2019-08-29 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | Hybrid integration of components on compact devices using moire-based measurement and vacuum-based extraction and mounting |
| CN111238363A (en) * | 2018-11-28 | 2020-06-05 | 中国科学院光电技术研究所 | Multi-wave radial shearing interferometer based on Fresnel zone plate |
-
1987
- 1987-10-19 JP JP62263554A patent/JPH01107102A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002088637A1 (en) * | 2001-04-26 | 2002-11-07 | Creo Srl | Absolute moire type position encoder for use in a control system |
| US6660997B2 (en) | 2001-04-26 | 2003-12-09 | Creo Srl | Absolute position Moiré type encoder for use in a control system |
| JP2008522412A (en) * | 2004-11-30 | 2008-06-26 | モレキュラー・インプリンツ・インコーポレーテッド | Interference analysis to produce nanoscale devices |
| JP2006332677A (en) * | 2005-05-27 | 2006-12-07 | Asml Netherlands Bv | Imprint lithography |
| US8241550B2 (en) | 2005-05-27 | 2012-08-14 | Asml Netherlands B.V. | Imprint lithography |
| JP2010267682A (en) * | 2009-05-12 | 2010-11-25 | Bondtech Inc | Device and method for alignment, and semiconductor device |
| JP2017204539A (en) * | 2016-05-10 | 2017-11-16 | キヤノン株式会社 | Position detector, position detection method, imprint device and manufacturing method of article |
| KR20190100951A (en) * | 2016-12-23 | 2019-08-29 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | Hybrid integration of components on compact devices using moire-based measurement and vacuum-based extraction and mounting |
| CN111238363A (en) * | 2018-11-28 | 2020-06-05 | 中国科学院光电技术研究所 | Multi-wave radial shearing interferometer based on Fresnel zone plate |
| CN111238363B (en) * | 2018-11-28 | 2021-09-07 | 中国科学院光电技术研究所 | Multi-wave radial shearing interferometer based on Fresnel zone plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5004348A (en) | Alignment device | |
| US5347356A (en) | Substrate aligning device using interference light generated by two beams irradiating diffraction grating | |
| JPH04225212A (en) | Projection aligner | |
| JPH01107102A (en) | Optical automatic positioning apparatus | |
| JP3428705B2 (en) | Position detecting device and method of manufacturing semiconductor device using the same | |
| JP2808619B2 (en) | Positioning apparatus, exposure apparatus, and element manufacturing method | |
| JPH08191043A (en) | Alignment method and exposure system used for this method | |
| JP3221057B2 (en) | Alignment device | |
| JPS62229942A (en) | Optical positioning device | |
| EP0397530B1 (en) | Alignment apparatus | |
| JPH11154645A (en) | Scan type aligner and method thereof | |
| JPH0295203A (en) | Aligning device | |
| JP3085292B2 (en) | Scanning exposure equipment | |
| JPH0548932B2 (en) | ||
| JP3713355B2 (en) | Position measuring device | |
| JPH06147827A (en) | Positional shift detecting method | |
| JP2683409B2 (en) | Positioning device | |
| JP2883385B2 (en) | Alignment method and their devices | |
| JP2862307B2 (en) | Position shift detection method | |
| KR900005639B1 (en) | Method and apparatus for setting a gap between first and second objects | |
| JPH06105679B2 (en) | Exposure equipment | |
| JPS63177004A (en) | Method for detecting positional shift of mask and wafer | |
| JP2874909B2 (en) | Method and apparatus for aligning first and second objects | |
| JP3513304B2 (en) | Position shift detection method and semiconductor device manufacturing method using the same | |
| JPH0365603A (en) | Method of aligning position |