JPS6052014A - Production equipment for semiconductor - Google Patents

Production equipment for semiconductor

Info

Publication number
JPS6052014A
JPS6052014A JP16136583A JP16136583A JPS6052014A JP S6052014 A JPS6052014 A JP S6052014A JP 16136583 A JP16136583 A JP 16136583A JP 16136583 A JP16136583 A JP 16136583A JP S6052014 A JPS6052014 A JP S6052014A
Authority
JP
Japan
Prior art keywords
film
window
film forming
forming chamber
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16136583A
Other languages
Japanese (ja)
Other versions
JPS6361769B2 (en
Inventor
Kyusaku Nishioka
西岡　久作
Keiji Fujiwara
啓司 藤原
Hiromi Ito
博巳 伊藤
Teruo Shibano
芝野　照夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16136583A priority Critical patent/JPS6052014A/en
Publication of JPS6052014A publication Critical patent/JPS6052014A/en
Publication of JPS6361769B2 publication Critical patent/JPS6361769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Abstract

PURPOSE:To prevent the retardation of the speed of the formation of a film in a photo-CVD method by removing the film formed in a film forming chamber in a cleaning chamber by a moving window between the film forming chamber and the cleaning chamber. CONSTITUTION:A cleaning chamber 6 and a rotary window 7 are mounted next to a film forming chamber 3. A film of Si, etc. adhering on the rotary window 7 in the film forming chamber 3 is removed through etching at a stage when the film is entered into the cleaning chamber 6 in which Freon 14 (CF4) gas plasma, etc. are generated, and a window 4 in the film forming chamber 3 and the rotary window 7 are kept under a transparent state at all times.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、半導体製造工程において使用される半導体
製造装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor manufacturing apparatus used in a semiconductor manufacturing process.

〔従来技術〕[Prior art]

半導体集積回路は、ますます高集積化が進み、製造プロ
セスの低温化への要求が厳しくなってきている。2. Description of the Related Art Semiconductor integrated circuits are becoming increasingly highly integrated, and demands for lower manufacturing process temperatures are becoming more severe.

特に、不純物プロファイルを崩さない、又は多層配線を
使うためには製造プロセスの低温化は是非とも必要とな
る。そのため成膜工程において従来使用されていた化学
気相成長（ＣＶＤ）プロセスの低温化を光ＣＶＤ法を使
って行なうという試みがなされている。In particular, it is absolutely necessary to lower the temperature of the manufacturing process in order to maintain the impurity profile or to use multilayer wiring. Therefore, attempts have been made to use a photo-CVD method to lower the temperature of the chemical vapor deposition (CVD) process conventionally used in the film forming process.

しかしながら、この光ＣＶＤ法ではウェハ上だけではな
く、チャンバ内に光を導入するための窓にも膜が堆積し
、くもることがら成膜速度が堆積中に減少してしまうと
いう問題があった。However, this photo-CVD method has a problem in that the film is deposited not only on the wafer but also on the window for introducing light into the chamber, causing clouding and reducing the film formation rate during deposition.

光ＣＶＤ法によるシリコン成膜の場合を例にとってこの
問題を以下図面を用いて説明する。This problem will be explained below using the drawings, taking as an example the case of silicon film formation by the photo-CVD method.

光ＣＶｒ）装置としては、従来、第１図に示すような断
面を持つ装置が考えられている。Conventionally, as an optical CVr) device, a device having a cross section as shown in FIG. 1 has been considered.

即ち水銀ランプのような紫外線を出す光源２から出た光
をミラー１等にて効率よく成膜チャンバ３中のウェハ５
に照射し、シラン（Ｓｉｌ１４）等の導入ガスを光反応
させることによってウェハ５上にシリコン（Ｓｉ）等の
膜を成長させる。この時ウェハ５上のみならず、入射窓
４にも膜が成長するため、光が透過しにくくなり、成膜
速度が減少してしまうという大きな問題があった。That is, light emitted from a light source 2 that emits ultraviolet light such as a mercury lamp is efficiently directed to the wafer 5 in the film forming chamber 3 using a mirror 1 or the like.
A film of silicon (Si) or the like is grown on the wafer 5 by photoreacting the introduced gas such as silane (Sil14). At this time, a film grows not only on the wafer 5 but also on the entrance window 4, which makes it difficult for light to pass through, resulting in a major problem in that the film formation rate decreases.

（発明の概要） この発明は」１記のような従来のものの問題点に鑑みて
なされたもので、ウェハに成膜を行なうためのガスが充
満された成膜チャンバの他に、該成膜チャンバ内のガス
により形成される膜を分解できるガスが充満されたクリ
ーニングチャンバを設け、成膜チャンバとクリーニング
チャンバとの間に移動窓を移動可能に配設し、成膜チャ
ンバにおいて」１記移動窓に形成される膜をクリーニン
グチャンバにおいて除去することにより、光ＣＶＤ法に
て股を形成する際に成膜速度が減少しない半導体製造装
置を提供することを目的としている。(Summary of the Invention) This invention was made in view of the problems of the conventional products as described in 1. A cleaning chamber filled with a gas capable of decomposing a film formed by the gas in the chamber is provided, a movable window is movably disposed between the film forming chamber and the cleaning chamber, and the "1 movement" in the film forming chamber is provided. It is an object of the present invention to provide a semiconductor manufacturing apparatus in which a film formed on a window is removed in a cleaning chamber so that the film formation rate does not decrease when forming a crotch using a photo-CVD method.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第２図は本発明の一実施例による半導体製造装置を示し
、図において、第１図と同一符号は同一のものを示す。FIG. 2 shows a semiconductor manufacturing apparatus according to an embodiment of the present invention, and in the figure, the same reference numerals as in FIG. 1 indicate the same parts.

６は成膜チャンバ３内のガスにより形成された膜を分解
できるガスが充満されたクリーニングチャンバ、７は移
動窓としての円盤伏在に配置されており、これは軸７ａ
の近辺及び外周端部分を除いて透明になっている。6 is a cleaning chamber filled with a gas capable of decomposing the film formed by the gas in the film forming chamber 3; 7 is arranged on a disk as a moving window;
It is transparent except for the vicinity of and the outer edge.

次に作用効果について説明する。第２図に示したように
成膜チャンバ３の隣りにクリーニングチャンバ６及び回
転窓７を備えたことにより、成膜チャンバ３にて回転窓
７に付着したシリコン（Ｓｔ）等の膜はフレオン１４（
ＣＦ４）ガスプラズマ等を発生させたクリーニングチャ
ンバ６に入った段階でエツチング除去され、成膜チャン
バ３にある窓４及び回転窓７は常に透明な状態に保つこ
とが可能となる。Next, the effects will be explained. As shown in FIG. 2, by providing a cleaning chamber 6 and a rotating window 7 adjacent to the film forming chamber 3, a film of silicon (St) or the like attached to the rotating window 7 in the film forming chamber 3 can be removed using Freon 14. (
CF4) The film is etched away when it enters the cleaning chamber 6 in which gas plasma or the like is generated, and the window 4 and rotating window 7 in the film forming chamber 3 can always be kept transparent.

そしてこの回転窓７と成膜チャンバ３．クリーニングチ
ャンバ６との間は完全にシールする必要は必ずしもなく
、装置全体の気密性さえ保てばよい。The rotating window 7 and the film forming chamber 3. It is not necessarily necessary to completely seal between the cleaning chamber 6 and the airtightness of the entire apparatus.

なお上記実施例では、移動窓７として回転窓を一例とし
てあげたが、これは必ずしも回転窓とする必要はなく、
スライドするタイプの移動窓であってもよい。また常時
移動する必要もなく、窓のくもりが成膜速度を減少しな
い程度の頻度にて移動するようにしてもよい。In the above embodiment, a rotating window was used as an example of the movable window 7, but this does not necessarily have to be a rotating window.
It may be a sliding type of moving window. Further, it is not necessary to constantly move the window, and the window may be moved at a frequency that does not reduce the film formation rate.

また本発明は、光ＣＶＤ装’＋１の入射窓のくもり対策
のみならずエツチング装置又は成膜装置のエツチング速
度、成膜速度を光学的に検出するための窓のくもり対策
としても応用することが可能である。Furthermore, the present invention can be applied not only as a countermeasure against fogging of the entrance window of the photo-CVD equipment '+1, but also as a countermeasure against fogging of the window for optically detecting the etching rate and film-forming rate of an etching device or a film-forming device. It is possible.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によればウェハに成膜を行なう
ためのガスが充満された成膜チャンバの他に、この成膜
チャンバ内のガスにより形成される膜を分解できるガス
が充満されたクリーニングチャンバを設け、成膜チャン
バとクリーニングチャンバとの間に移動窓を移動可能に
配設し、この移動窓に成膜チャンバで形成される膜をク
リーニングチャンバで除去するようにしたので、光ｃＶ
Ｄ法にて成膜速度が減少しない半導体製造装置が得られ
る効果がある。As described above, according to the present invention, in addition to a film forming chamber filled with gas for forming a film on a wafer, there is also a film forming chamber filled with a gas that can decompose the film formed by the gas in this film forming chamber. A cleaning chamber is provided, a moving window is movably disposed between the film forming chamber and the cleaning chamber, and the film formed in the film forming chamber is removed by the cleaning chamber.
Method D has the effect of providing a semiconductor manufacturing apparatus in which the film formation rate does not decrease.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の半導体製造装置を示す断面図、第２図は
この発明の一実施例による半導体製造装置を示す断面図
である。 図において、１はミラー、２は光源、３は成膜チャンバ
、４は入射窓、５はウェハ、６はクリーニングチャンバ
、７は回転窓（移動窓）、７ａは回転軸である。 なお図中、同一符号は同−又は相当部分を示す。 代理人　大岩増雄FIG. 1 is a sectional view showing a conventional semiconductor manufacturing apparatus, and FIG. 2 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the figure, 1 is a mirror, 2 is a light source, 3 is a film forming chamber, 4 is an entrance window, 5 is a wafer, 6 is a cleaning chamber, 7 is a rotating window (moving window), and 7a is a rotating shaft. In the drawings, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa

Claims (1)

【特許請求の範囲】[Claims] （１）光を利用した化学気相反応によりウェハに成膜を
行なう半導体製造装置であって、ウェハをを導入するた
めの入射窓と、上記成膜チャンバにおいて上記ガスから
形成される膜を分解できるガスが充満されたクリーニン
グチャンバと、上記成膜チャンバとクリーニングチャン
バとの間に移動自在に設りられた移動窓とを備え、」二
記移動窓は上記成膜チャンバ内では−１−記入射窓と」
二記ウェハとの間に配設されていることを特徴とする半
導体製造装置。 動自在に設りられた回転窓であることを特徴とする特許
請求の範囲第１項記載の半導体製造装置。(1) A semiconductor manufacturing device that forms a film on a wafer by chemical vapor phase reaction using light, which includes an entrance window for introducing the wafer and a film forming chamber that decomposes the film formed from the gas. a cleaning chamber filled with a gas that can With the emissive window
2. A semiconductor manufacturing device, characterized in that the device is disposed between the wafer and the wafer. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is a rotary window provided so as to be movable.
JP16136583A 1983-08-31 1983-08-31 Production equipment for semiconductor Granted JPS6052014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16136583A JPS6052014A (en) 1983-08-31 1983-08-31 Production equipment for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16136583A JPS6052014A (en) 1983-08-31 1983-08-31 Production equipment for semiconductor

Publications (2)

Publication Number Publication Date
JPS6052014A true JPS6052014A (en) 1985-03-23
JPS6361769B2 JPS6361769B2 (en) 1988-11-30

Family

ID=15733698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16136583A Granted JPS6052014A (en) 1983-08-31 1983-08-31 Production equipment for semiconductor

Country Status (1)

Country Link
JP (1) JPS6052014A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196526A (en) * 1985-02-26 1986-08-30 Agency Of Ind Science & Technol Photochemical vapor deposition process and apparatus thereof
JPS62104438U (en) * 1985-12-23 1987-07-03
JPS63314828A (en) * 1987-06-18 1988-12-22 Matsushita Electric Ind Co Ltd Photo-cvd equipment
FR2639474A1 (en) * 1988-11-24 1990-05-25 Canon Kk MICROWAVE PLASMA VAPOR PHASE CHEMICAL DEPOSITION APPARATUS
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate
US5288684A (en) * 1990-03-27 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction
US5810930A (en) * 1996-02-06 1998-09-22 Korea Electric Power Corporation Photo-chemical vapor deposition apparatus having exchange apparatus of optical window and method of exchanging optical window therewith
US6284049B1 (en) * 1997-05-01 2001-09-04 Nec Corporation Processing apparatus for fabricating LSI devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196526A (en) * 1985-02-26 1986-08-30 Agency Of Ind Science & Technol Photochemical vapor deposition process and apparatus thereof
JPS62104438U (en) * 1985-12-23 1987-07-03
JPS63314828A (en) * 1987-06-18 1988-12-22 Matsushita Electric Ind Co Ltd Photo-cvd equipment
FR2639474A1 (en) * 1988-11-24 1990-05-25 Canon Kk MICROWAVE PLASMA VAPOR PHASE CHEMICAL DEPOSITION APPARATUS
US4995341A (en) * 1988-11-24 1991-02-26 Canon Kabushiki Kaisha Microwave plasma CVD apparatus for the formation of a large-area functional deposited film
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate
US5288684A (en) * 1990-03-27 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction
US5810930A (en) * 1996-02-06 1998-09-22 Korea Electric Power Corporation Photo-chemical vapor deposition apparatus having exchange apparatus of optical window and method of exchanging optical window therewith
US6284049B1 (en) * 1997-05-01 2001-09-04 Nec Corporation Processing apparatus for fabricating LSI devices

Also Published As

Publication number Publication date
JPS6361769B2 (en) 1988-11-30

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