JPS6361769B2 - - Google Patents
Info
- Publication number
- JPS6361769B2 JPS6361769B2 JP16136583A JP16136583A JPS6361769B2 JP S6361769 B2 JPS6361769 B2 JP S6361769B2 JP 16136583 A JP16136583 A JP 16136583A JP 16136583 A JP16136583 A JP 16136583A JP S6361769 B2 JPS6361769 B2 JP S6361769B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- film
- window
- wafer
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、半導体製造工程において使用され
る半導体製造装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor manufacturing apparatus used in a semiconductor manufacturing process.
半導体集積回路は、ますます高集積化が進み、
製造プロセスの低温化への要求が厳しくなつてき
ている。
Semiconductor integrated circuits are becoming increasingly highly integrated,
There is a growing demand for lower temperatures in manufacturing processes.
特に、不純物プロフアイルを崩さない、又は多
層配線を使うためには製造プロセスの低温化は是
非とも必要となる。そのため成膜工程において従
来使用されていた化学気相成長（CVD）プロセ
スの低温化を光CVD法を使つて行なうという試
みがなされている。 In particular, in order to maintain the impurity profile or to use multilayer wiring, it is absolutely necessary to lower the manufacturing process temperature. For this reason, attempts have been made to use an optical CVD method to lower the temperature of the chemical vapor deposition (CVD) process conventionally used in the film forming process.
しかしながら、この光CVD法ではウエハ上だ
けではなく、チヤンバ内に光を導入するための窓
にも膜が堆積し、くもることから成膜速度が堆積
中に減少してしまうという問題があつた。 However, this optical CVD method has the problem that the film is deposited not only on the wafer but also on the window for introducing light into the chamber, causing clouding and reducing the film formation rate during deposition.
光CVD法によるシリコン成膜の場合を例にと
つてこの問題を以下図面を用いて説明する。 This problem will be explained below using the drawings, taking as an example the case of silicon film formation by the optical CVD method.
光CVD装置としては、従来、第１図に示すよ
うな断面を持つ装置が考えられている。 Conventionally, as an optical CVD apparatus, an apparatus having a cross section as shown in FIG. 1 has been considered.
即ち水銀ランプのような紫外線を出す光源２か
ら出た光をミラー１等にて効率よく成膜チヤンバ
３中のウエハ５に照射し、シラン（SiH4）等の
導入ガスを光反応させることによつてウエハ５上
にシリコン（Si）等の膜を成長させる。この時ウ
エハ５上のみならず、入射窓４にも膜が成長する
ため、光が透過しにくくなり、成膜速度が減少し
てしまうという大きな問題があつた。 That is, light emitted from a light source 2 that emits ultraviolet light such as a mercury lamp is efficiently irradiated onto the wafer 5 in the film forming chamber 3 using a mirror 1, etc., and the introduced gas such as silane (SiH 4 ) is caused to undergo a photoreaction. Therefore, a film of silicon (Si) or the like is grown on the wafer 5. At this time, a film grows not only on the wafer 5 but also on the entrance window 4, which causes a serious problem in that it becomes difficult for light to pass through and the film formation rate decreases.
この発明は上記のような従来のものの問題点に
鑑みてなされたもので、ウエハに成膜を行なうた
めのガスが充満された成膜チヤンバの他に、該成
膜チヤンバ内のガスにより形成される膜を分解で
きるガスが充満されたクリーニングチヤンバを設
け、成膜チヤンバとクリーニングチヤンバとの間
に移動窓を移動可能に配設し、成膜チヤンバにお
いて上記移動窓に形成される膜をクリーニングチ
ヤンバにおいて除去することにより、光CVD法
にて膜を形成する際に成膜速度が減少しない半導
体製造装置を提供することを目的としている。
This invention was made in view of the problems of the conventional ones as described above, and in addition to a film forming chamber filled with gas for forming a film on a wafer, a film formed by the gas in the film forming chamber is also provided. A cleaning chamber filled with a gas capable of decomposing a film is provided, a movable window is movably disposed between the deposition chamber and the cleaning chamber, and the film formed on the movable window is disposed in the deposition chamber. The object of the present invention is to provide a semiconductor manufacturing apparatus in which the film formation rate is not reduced when forming a film using the optical CVD method by removing the film in a cleaning chamber.
以下、この発明の一実施例を図について説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明の一実施例による半導体製造装
置を示し、図において、第１図と同一符号は同一
のものを示す。６は成膜チヤンバ３内のガスによ
り形成された膜を分解できるガスが充満されたク
リーニングチヤンバ、７は移動窓としての円盤状
の回転窓で、成膜チヤンバ３とクリーニングチヤ
ンバ６間の中央に設けられた軸７ａを中心に回転
自在に配置されており、これは軸７ａの近辺及び
外周端部分を除いて透明になつている。 FIG. 2 shows a semiconductor manufacturing apparatus according to an embodiment of the present invention, and in the figure, the same reference numerals as in FIG. 1 indicate the same parts. 6 is a cleaning chamber filled with a gas that can decompose the film formed by the gas in the film forming chamber 3; 7 is a disk-shaped rotating window as a moving window; It is arranged to be rotatable around a shaft 7a provided at the center, and is transparent except for the vicinity of the shaft 7a and the outer peripheral end portion.
次に作用効果について説明する。第２図に示し
たように成膜チヤンバ３の隣りにクリーニングチ
ヤンバ６及び回転窓７を備えたことにより、成膜
チヤンバ３にて回転窓７に付着したシリコン
（Si）等の膜はフレオン１４（CF4）ガスプラズ
マ等を発生させたクリーニングチヤンバ６に入つ
た段階でエツチング除去され、成膜チヤンバ３に
ある窓４及び回転窓７は常に透明な状態に保つこ
とが可能となる。 Next, the effects will be explained. As shown in FIG. 2, by providing a cleaning chamber 6 and a rotating window 7 next to the film forming chamber 3, a film of silicon (Si) etc. attached to the rotating window 7 in the film forming chamber 3 is removed from Freon. The film is etched away when it enters the cleaning chamber 6 in which CF 4 gas plasma or the like is generated, and the window 4 and rotating window 7 in the film-forming chamber 3 can always be kept transparent.
そしてこの回転窓７と成膜チヤンバ３、クリー
ニングチヤンバ６との間は完全にシールする必要
は必ずしもなく、装置全体の気密性され保てばよ
い。 It is not necessarily necessary to completely seal between the rotating window 7, the film forming chamber 3, and the cleaning chamber 6, and it is sufficient to maintain airtightness of the entire apparatus.
なお上記実施例では、移動窓７として回転窓を
一例としてあげたが、これは必ずしも回転窓とす
る必要はなく、スライドするタイプの移動窓であ
つてもよい。また常時移動する必要もなく、窓の
くもりが成膜速度を減少しない程度の頻度にて移
動するようにしてもよい。 In the above embodiment, a rotary window is used as an example of the movable window 7, but this does not necessarily have to be a rotary window, and may be a sliding type movable window. Further, it is not necessary to constantly move the window, and the window may be moved at a frequency that does not reduce the film formation rate.
また本発明は、光CVD装置の入射窓のくもり
対策のみならずエツチング装置又は成膜装置のエ
ツチング速度、成膜速度を光学的に検出するため
の窓のくもり対策としても応用することが可能で
ある。 Furthermore, the present invention can be applied not only as a countermeasure against fogging of the entrance window of an optical CVD apparatus, but also as a countermeasure against fogging of a window for optically detecting the etching rate and film-forming rate of an etching apparatus or film-forming apparatus. be.
以上のように、この発明によればウエハに成膜
を行なうためのガスが充満された成膜チヤンバの
他に、この成膜チヤンバ内のガスにより形成され
る膜を分解できるガスが充満されたクリーニング
チヤンバを設け、成膜チヤンバとクリーニングチ
ヤンバとの間に移動窓を移動可能に配設し、この
移動窓に成膜チヤンバで形成される膜をクリーニ
ングチヤンバで除去するようにしたので、光
CVD法にて成膜速度が減少しない半導体製造装
置が得られる効果がある。
As described above, according to the present invention, in addition to a deposition chamber filled with gas for forming a film on a wafer, there is also a deposition chamber filled with a gas capable of decomposing the film formed by the gas in this deposition chamber. A cleaning chamber is provided, a movable window is movably disposed between the deposition chamber and the cleaning chamber, and the cleaning chamber removes the film formed in the deposition chamber on the movable window. ,light
This has the effect of providing a semiconductor manufacturing apparatus in which the deposition rate does not decrease in the CVD method.
第１図は従来の半導体製造装置を示す断面図、
第２図はこの発明の一実施例による半導体製造装
置を示す断面図である。
図において、１はミラー、２は光源、３は成膜
チヤンバ、４は入射窓、５はウエハ、６はクリー
ニングチヤンバ、７は回転窓（移動窓）、７ａは
回転軸である。なお図中、同一符号は同一又は相
当部分を示す。
FIG. 1 is a cross-sectional view showing a conventional semiconductor manufacturing equipment.
FIG. 2 is a sectional view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the figure, 1 is a mirror, 2 is a light source, 3 is a film forming chamber, 4 is an entrance window, 5 is a wafer, 6 is a cleaning chamber, 7 is a rotating window (moving window), and 7a is a rotating shaft. In the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
膜を行なう半導体製造装置であつて、ウエハを収
容しかつ該ウエハに膜を形成するためのガスが充
満された成膜チヤンバと、該成膜チヤンバ内に光
を導入するための入射窓と、上記成膜チヤンバに
おいて上記ガスから形成される膜を分解できるガ
スが充満されたクリーニングチヤンバと、上記成
膜チヤンバとクリーニングチヤンバとの間に移動
自在に設けられた移動窓とを備え、上記移動窓は
上記成膜チヤンバ内では上記入射窓と上記ウエハ
との間に配設されていることを特徴とする半導体
製造装置。 ２ 上記移動窓が、上記成膜チヤンバとクリーニ
ングチヤンバ間の中央に設けられた軸を中心に回
動自在に設けられた回転窓であることを特徴とす
る特許請求の範囲第１項記載の半導体製造装置。[Scope of Claims] 1. A semiconductor manufacturing device that forms a film on a wafer by a chemical vapor phase reaction using light, which accommodates a wafer and is filled with a gas for forming a film on the wafer. a chamber, an entrance window for introducing light into the deposition chamber, a cleaning chamber filled with a gas capable of decomposing a film formed from the gas in the deposition chamber, and the deposition chamber and cleaning. A semiconductor manufacturing device comprising a movable window movably provided between the chamber and the film forming chamber, the movable window being disposed between the incident window and the wafer within the film forming chamber. Device. 2. The method according to claim 1, wherein the movable window is a rotary window rotatably provided around an axis provided in the center between the film forming chamber and the cleaning chamber. Semiconductor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16136583A JPS6052014A (en) | 1983-08-31 | 1983-08-31 | Production equipment for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16136583A JPS6052014A (en) | 1983-08-31 | 1983-08-31 | Production equipment for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6052014A JPS6052014A (en) | 1985-03-23 |
| JPS6361769B2 true JPS6361769B2 (en) | 1988-11-30 |
Family
ID=15733698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16136583A Granted JPS6052014A (en) | 1983-08-31 | 1983-08-31 | Production equipment for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6052014A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61196526A (en) * | 1985-02-26 | 1986-08-30 | Agency Of Ind Science & Technol | Photochemical vapor deposition process and apparatus thereof |
| JPS62104438U (en) * | 1985-12-23 | 1987-07-03 | ||
| JPS63314828A (en) * | 1987-06-18 | 1988-12-22 | Matsushita Electric Ind Co Ltd | Photo-cvd equipment |
| JPH02141578A (en) * | 1988-11-24 | 1990-05-30 | Canon Inc | Deposited film forming device |
| US5084125A (en) * | 1989-09-12 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for producing semiconductor substrate |
| JPH03277774A (en) * | 1990-03-27 | 1991-12-09 | Semiconductor Energy Lab Co Ltd | Photo-vapor reaction device |
| KR0167827B1 (en) * | 1996-02-06 | 1999-01-15 | 이종훈 | Photo-chemical vapor deposition apparatus equipped with exchange apparatus of optical window and method of exchanging optical window therewith |
| JP2953426B2 (en) * | 1997-05-01 | 1999-09-27 | 日本電気株式会社 | LSI manufacturing process equipment |
-
1983
- 1983-08-31 JP JP16136583A patent/JPS6052014A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6052014A (en) | 1985-03-23 |
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