JPS6047478A - Josephson junction element - Google Patents
Josephson junction elementInfo
- Publication number
- JPS6047478A JPS6047478A JP58154844A JP15484483A JPS6047478A JP S6047478 A JPS6047478 A JP S6047478A JP 58154844 A JP58154844 A JP 58154844A JP 15484483 A JP15484483 A JP 15484483A JP S6047478 A JPS6047478 A JP S6047478A
- Authority
- JP
- Japan
- Prior art keywords
- josephson junction
- nitride
- junction element
- tunnel barrier
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、論理回路あるいは記憶回路を構成するスイッ
チング素子などに用いられるジョセフソン接合素子の構
造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to the structure of a Josephson junction element used as a switching element constituting a logic circuit or a memory circuit.
ジョセフソン接合素子のトンネル障壁層の材料としては
、これまで超′亀尋電極の材料自材の酸化Ｗａｈるいは
アモルファスｓｉ、ｈｔ等の酸化物が用いられてきた３
、特に超電導亀惚の材料がＮｂである場合、°Ｎｂの酸
化物、アモルファスＳｉやＡＡの酸化物をトンネル障壁
層とする素子は、トンネル障壁層中の酸素がＮｂ中へ拡
散してＮｂの酸化物を形成するため、ジョセフソン嵌合
素子の特性が変化するという欠点がめった。As materials for the tunnel barrier layer of Josephson junction elements, oxides such as oxidized Wah, amorphous Si, and Ht, which are the materials of the ultra-high-temperature electrode, have been used so far3.
In particular, when the material of the superconductor is Nb, in devices that use Nb oxide, amorphous Si, or AA oxide as the tunnel barrier layer, oxygen in the tunnel barrier layer diffuses into Nb and the Nb Due to the formation of oxides, the characteristics of the Josephson mating elements often change.
従来、ジョセフソン接合素子の２つの超Ｔ（ｌ導′電極
間の絶縁層用材料としては、ＳｉＯ又は８ ｉｃｈなど
のシリコンの酸化物が用いられていた。従って絶縁層中
の酸素の影響で３ジョセフソン接合素子の特性が変化す
るために、再現性と均一性の良い特性をＭするジョセフ
ソン接合素子を作線することが離しいという欠点があっ
た。Conventionally, silicon oxides such as SiO or 8 ich have been used as the material for the insulating layer between the two super-T electrodes of a Josephson junction element. Therefore, due to the influence of oxygen in the insulating layer, 3. Since the characteristics of the Josephson junction element change, there is a drawback that it is difficult to fabricate a Josephson junction element with good reproducibility and uniformity of characteristics.
本発明の目的は絶縁物およびトンネル障壁層の材料に酸
化物を用いないことによシ、ジョセフソン接合の特性変
化を除去し、再現性と均一性の良い特性を有するジョセ
フソン接合素子を提供することにある。An object of the present invention is to eliminate changes in the characteristics of Josephson junctions by not using oxides as materials for insulators and tunnel barrier layers, and to provide a Josephson junction device having characteristics with good reproducibility and uniformity. It's about doing.
本発明においては、トンネル障壁層および絶縁物層の材
料として、電気的な絶縁性が良く、シかも防電率がＮ
ｂ ２０ ｓに比べて小さいＡＡの窒化物を用いること
によシ、酸素の拡散によるジョセフソン接合素子の特性
変化を防止し、しかも素子の電気Ｗｉを減少させること
によってスイッチング速高を向上させて、再現性及び均
一性に渡れた特性を有し、しかも高速動作に適したジョ
セフソン接合素子の作製を可能にした点に特徴がある。In the present invention, the materials for the tunnel barrier layer and the insulating layer have good electrical insulation properties and a dielectric resistivity of N.
By using AA nitride, which is smaller than b 20 s, changes in the characteristics of the Josephson junction device due to oxygen diffusion can be prevented, and the switching speed can be improved by reducing the electric Wi of the device. The present invention is characterized in that it has enabled the production of a Josephson junction element that has excellent reproducibility and uniformity, and is suitable for high-speed operation.
以下、本発明を実施例を参照して詳細に説明する。Ｍ１
図に示したように温度１１００ｃで純酸素によシ熱酸化
し７’ｃＳｉ基板１上に第１の超電導電極の材料である
Ｎｂを約３ＱＱｎｍの厚さに高周波スパッタリング法に
よって成膜する。このＮｂ膜をホトレジストをマスクと
したＡｒイオンビームエツチング法によって加工し第１
の超電導電極２とする。次にＡｔの窒化物を反応性高周
波スパッタリング法によって約４００ｎｍＯ薄Ｊ漠とし
て形成し、これを同様にＡｒイオンビームエツチングに
よって加工し絶縁物層３とする。下部′１極２の底面を
Ａｒイオンのスパッタリングによってクリーニングした
後、Ｐ３縁物層３と同様の手ｊ胆でＡＡの窒化物？厚さ
約１〜１０ｎｍの薄膜として成膜しトンネル障壁層４と
する。続いて真空を破ることなく同゛−の装置でＮｂよ
９成る厚さ約６００ｎｍの薄膜を形成しＡｒイオンビー
ムエツチング法によって加工し上部電極５とした。以上
によって本発明のジョセフソン接合素子を作製すること
ができた。このジョセフソン接合素子を用いて論理回路
あるいは記憶回路を作製したところ、素子の特性変化が
ほとんど無く、シかもスイッチング速度が向上している
ため、歩留υ、信頼性を向上させ、さらに回路の動作速
度を改善して、超高速のジョセフノン集積回路を実現す
ることができた。Hereinafter, the present invention will be explained in detail with reference to Examples. M1
As shown in the figure, Nb, which is the material of the first superconducting electrode, is deposited on a 7'c Si substrate 1 by thermal oxidation with pure oxygen at a temperature of 1100°C to a thickness of about 3QQnm by high-frequency sputtering. This Nb film was processed by Ar ion beam etching using a photoresist as a mask.
The superconducting electrode 2 is as follows. Next, At nitride is formed as a thin film of about 400 nm by reactive high frequency sputtering, and this is similarly processed by Ar ion beam etching to form the insulating layer 3. After cleaning the bottom surface of the lower electrode 2 by sputtering Ar ions, AA nitride is applied in the same manner as the P3 edge layer 3. A thin film having a thickness of about 1 to 10 nm is formed to form the tunnel barrier layer 4. Subsequently, without breaking the vacuum, a thin film of Nb 9 with a thickness of about 600 nm was formed using the same apparatus and processed by Ar ion beam etching to form the upper electrode 5. Through the above steps, the Josephson junction device of the present invention could be manufactured. When logic circuits or memory circuits were fabricated using this Josephson junction device, there was almost no change in the characteristics of the device, and the switching speed was improved, which improved yield υ and reliability, and further improved circuit performance. By improving the operating speed, we were able to realize ultra-high-speed Josephnon integrated circuits.
なお、本実施例では、２つの超電導電極の材料としてＮ
ｂを用いたが、Ｐｂあるいはｐｂ金合金さらにＮｂＮ等
を用いた場合でも同様の改善を得ることかできた。In this example, N was used as the material for the two superconducting electrodes.
Although Pb, a Pb gold alloy, NbN, etc. were used, the same improvement could be obtained.
以上述べたように本発明によれば、トンネル障壁層の材
料として、熱的に安定で、しかも酸素の拡散源とならな
いＡＡＯ鷺化物を用いるので、熱サイクルや経時変化に
よる劣化が少なく、かつ電流電圧特性の再現性と均一性
を向上させ、しかもスイッチング速度を改善できるとい
う効果がある。As described above, according to the present invention, as the material of the tunnel barrier layer, an AAO compound which is thermally stable and does not become a diffusion source of oxygen is used, so there is little deterioration due to thermal cycles or changes over time, and This has the effect of improving the reproducibility and uniformity of voltage characteristics, as well as improving switching speed.
１・・・Ｓｉ基板、２・・・下部電極、３・・・絶縁物
層、４第 １ 図DESCRIPTION OF SYMBOLS 1... Si substrate, 2... Lower electrode, 3... Insulator layer, 4 Fig. 1
Claims (1)
ンネル障壁ｊ―を介して結合された構成を有スルジョセ
フソン接合素子において、該トンネル障壁層はＡ４の窒
化物を用いて成ることを特徴とするジョセフソン接合素
子。 ２、特許請求の範囲第１項に記載のジョセフソン接合素
子において、前記第１および第２の超電導電極を電気的
に絶縁する目的で使用される絶縁膜の材料はＡｔの窒化
物を用いて成ることを特徴とするジョセフソン接合素子
。−[Claims] 1. In a Josephson junction device having a structure in which first and second superconducting electrodes made of superconductors are coupled via a tunnel barrier, the tunnel barrier layer is made of nitrided A4. A Josephson junction element characterized in that it is formed using a material. 2. In the Josephson junction device according to claim 1, the material of the insulating film used for the purpose of electrically insulating the first and second superconducting electrodes is At nitride. A Josephson junction element characterized by: −
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58154844A JPS6047478A (en) | 1983-08-26 | 1983-08-26 | Josephson junction element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58154844A JPS6047478A (en) | 1983-08-26 | 1983-08-26 | Josephson junction element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6047478A true JPS6047478A (en) | 1985-03-14 |
Family
ID=15593126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58154844A Pending JPS6047478A (en) | 1983-08-26 | 1983-08-26 | Josephson junction element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6047478A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63209185A (en) * | 1987-02-26 | 1988-08-30 | Agency Of Ind Science & Technol | Superconducting circuit device |
| JPS63245975A (en) * | 1987-04-01 | 1988-10-13 | Semiconductor Energy Lab Co Ltd | Superconductor device |
| JPS63261770A (en) * | 1987-04-18 | 1988-10-28 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting device |
| JPS63261771A (en) * | 1987-04-18 | 1988-10-28 | Semiconductor Energy Lab Co Ltd | Manufacture of josephson device |
| JPS63261769A (en) * | 1987-04-18 | 1988-10-28 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting device |
| US10542667B2 (en) | 2017-01-02 | 2020-01-28 | Lg Electronics Inc. | Lawn mower robot |
-
1983
- 1983-08-26 JP JP58154844A patent/JPS6047478A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63209185A (en) * | 1987-02-26 | 1988-08-30 | Agency Of Ind Science & Technol | Superconducting circuit device |
| JPS63245975A (en) * | 1987-04-01 | 1988-10-13 | Semiconductor Energy Lab Co Ltd | Superconductor device |
| JPS63261770A (en) * | 1987-04-18 | 1988-10-28 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting device |
| JPS63261771A (en) * | 1987-04-18 | 1988-10-28 | Semiconductor Energy Lab Co Ltd | Manufacture of josephson device |
| JPS63261769A (en) * | 1987-04-18 | 1988-10-28 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting device |
| JPH0577313B2 (en) * | 1987-04-18 | 1993-10-26 | Handotai Energy Kenkyusho | |
| JPH0577317B2 (en) * | 1987-04-18 | 1993-10-26 | Handotai Energy Kenkyusho | |
| JPH0577314B2 (en) * | 1987-04-18 | 1993-10-26 | Handotai Energy Kenkyusho | |
| US10542667B2 (en) | 2017-01-02 | 2020-01-28 | Lg Electronics Inc. | Lawn mower robot |
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