JPS6037736A - Purification of surface - Google Patents

Purification of surface

Info

Publication number
JPS6037736A
JPS6037736A JP14568583A JP14568583A JPS6037736A JP S6037736 A JPS6037736 A JP S6037736A JP 14568583 A JP14568583 A JP 14568583A JP 14568583 A JP14568583 A JP 14568583A JP S6037736 A JPS6037736 A JP S6037736A
Authority
JP
Japan
Prior art keywords
fine particles
carbon monoxide
substrate
laser
adhered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14568583A
Other languages
Japanese (ja)
Inventor
Tsunetoshi Arikado
経敏 有門
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP14568583A priority Critical patent/JPS6037736A/en
Publication of JPS6037736A publication Critical patent/JPS6037736A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Abstract

PURPOSE:To purify the surface by quickly converting a heavy metal to carbonyl by irradiating the surface of semiconductor substrate with a high output carbon monoxide pulse laser under the carbon monoxide ambient and momentarily heating the surface to react a metal and carbon monoxide molecules on the occasion of purifying the surface of said semiconductor substrate. CONSTITUTION:A p type Si substrate 1 is immersed into the aqueous solution suspending fine particles of Ni and Fe and then it is washed by water. Thereafter fine particles of Ni and Fe are adhered to the surface. This substrate 1 is attached on a wafer support base 4 with the surface adhering fine particles 2 directed to the CO2 laser and housed in the vacuum apparatus wherein a gas supply entrance 5 and a pressure sensor 6 are provided. Thereafter, a valve 3 is opened in order to operate an oil rotation pump 8 and exhaust within the vacuum apparatus. The CO2 gas is supplied thereto from the supply entrance 5 until the internal pressure of 700Torr can be obtained and the fine particles 2 are irradiated with the laser 7. Thereby, the fine particles 2 of Ni and Fe adhered can be eliminated perfectly.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は、固体材料表面、特に半導体基板表面の清浄化
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a method of cleaning a solid material surface, particularly a semiconductor substrate surface.

〔従来技術とその問題点〕[Prior art and its problems]

半導体集積回路製造においては、工程途中で種々の不純
物やゴミ等が基板表面に付着する。不純物中の有機物は
、一般にＯｆアッシングや０２存在化での柴外光照射に
より０．を生成せしめ、酸化除去されることが知られて
いる。金属類は、有機物で異なってドライな方法で除去
することが不可能であるため、一般に酸に溶解させ、水
洗する。水は、軸側φ、、Ｌ＋Ａ輔↓弔セｔユｔ　壱Δ
？ｒτ蛸蔭九陸土することは不可能であり、近年金属類
の除去方法のドライ化の要求が高まっている。In semiconductor integrated circuit manufacturing, various impurities, dust, etc. adhere to the substrate surface during the process. Organic substances in impurities are generally removed to 0. is known to be generated and removed by oxidation. Since metals are organic substances and cannot be removed by dry methods, they are generally dissolved in acid and washed with water. Water is on the shaft side φ, L + A ↓ 1 Δ
? It is impossible to remove rτ Takokage, and in recent years there has been an increasing demand for a dry method for removing metals.

本発明者は、Ｓｉ　ウェーッ・上に付着した重金属類を
液体を使用することなく除去する方法を鋭意検討した結
果、−酸化炭素雰囲気下で加熱することにより、カルボ
ニル化合物として除去しうろことを見い出した。しかし
ながら、単に一酸化炭素雰囲気下で加熱するだけでは、
除去に長い時間を要し、生産性が低い難点があった。As a result of intensive research into a method for removing heavy metals adhering to Si substrates without using liquids, the inventors discovered that they could be removed as carbonyl compounds by heating in a carbon oxide atmosphere. Ta. However, simply heating in a carbon monoxide atmosphere does not
The problem was that removal took a long time and productivity was low.

［発明の目的］ 本発明の目的は、速やかに重金属をカルボニル化して半
導体表面を清浄化する方法を提供することを目的とする
。[Object of the Invention] An object of the present invention is to provide a method for quickly carbonylating heavy metals and cleaning semiconductor surfaces.

〔発明の概要〕[Summary of the invention]

本発明は、−酸化炭素雰囲気下で、半導体表面上に大出
力の（−酸化炭素）パルスレーザ−を照射し、瞬間的に
半導体表面を加熱せしめ、金属と一酸化炭素分子を反応
せしめることを特徴とする。The present invention involves irradiating a high-output (-carbon oxide) pulse laser onto the semiconductor surface in a carbon oxide atmosphere to instantaneously heat the semiconductor surface and cause metal and carbon monoxide molecules to react. Features.

し発明の効果〕 本発明によればドライでかつ生産性のすぐれた表面清浄
化が可能である。Effects of the Invention] According to the present invention, dry surface cleaning with excellent productivity is possible.

〔発明の実施例〕[Embodiments of the invention]

本発明の実施例を以下に図面を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.

先づ、第１図に示すようにＰ型８ｉ　（１００）基板１
をＮ１とＦｅ微粉末を懸濁した水溶液中にひたしだ後軽
く水洗を行ない、Ｓｉ　基板１上にＦｅとＮｉ　の微粉
末２を付着させる。次に該８ｉ基板１を半分に切断し、
一方を第２図に示す真空装置内の試料ホルダー４上に載
置し、パルプ３を開いて、排気を行なう。続いてガス導
入口５より一酸化炭素ガスを導入圧力を７ＱＱＴｏｒｒ
　に調整し、石英窓５よりＣＯ！パルスレーザ−７を導
入し、基板１表面に２シヨツト照射する。該試料と残り
半分の試料の表面とをそれぞれオージェ分析した結果が
第３図である。曲線１は本発明の処理法による場合、曲
線２は本発明の処理が無い場合である。ＣＯＷ、囲気下
でＣＯ！レーザー照射により明らかにｒｅ、Ｎｉが除去
されていることがわかる。First, as shown in FIG. 1, a P-type 8i (100) substrate 1
is soaked in an aqueous solution in which N1 and Fe fine powder are suspended, and then lightly washed with water to deposit Fe and Ni fine powder 2 on Si substrate 1. Next, cut the 8i substrate 1 in half,
One side is placed on the sample holder 4 in the vacuum apparatus shown in FIG. 2, and the pulp 3 is opened to perform evacuation. Next, carbon monoxide gas is introduced from the gas inlet 5 at a pressure of 7QQTorr.
CO from quartz window 5! A pulse laser 7 is introduced and the surface of the substrate 1 is irradiated with two shots. FIG. 3 shows the results of Auger analysis of the surfaces of this sample and the remaining half of the sample. Curve 1 is the case with the treatment method of the present invention, and curve 2 is the case without the treatment of the present invention. COW, CO under the surroundings! It can be seen that re and Ni are clearly removed by laser irradiation.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明の試験に使用される試料を示す正面図
、第２図は本発明の一実施例に於いて使用する装置の概
略構成図、第３図は１本発明ｔこよる試料表面のオージ
ェ分析結果を示す曲線図である。 １　、、、　Ｐ型５ｉ（１００）基板　２−Ｆｅ、Ｎｉ
微粉末３・・・メインバルブ　４・・・ウェーハ支持台
５・・・ガス導入口　６・・・圧力センサ７・・・”０
２　Ｌ’　−ｆ　８・・・油回転ポンプ（７３１７）　
弁理士　則　近　艇　佑　（ほか１名）第１図 第２図 第３図 木秀竜＋−ｉｉカニネルへ゛−Fig. 1 is a front view showing a sample used in the test of the present invention, Fig. 2 is a schematic configuration diagram of an apparatus used in one embodiment of the present invention, and Fig. 3 is a front view showing a sample used in the test of the present invention. It is a curve diagram showing the result of Auger analysis of the sample surface. 1, P-type 5i (100) substrate 2-Fe, Ni
Fine powder 3... Main valve 4... Wafer support stand 5... Gas inlet 6... Pressure sensor 7..."0
2 L'-f 8...Oil rotary pump (7317)
Patent Attorney Nori Chika Fune (and 1 other person) Figure 1 Figure 2 Figure 3 Ki Hideryu +-ii Kaninel-

Claims (1)

【特許請求の範囲】[Claims] 一酸化炭素の減圧雰囲気下で、清浄化すべき材料表面に
レーザー光を照射することを特徴とする表面清浄体方法
。A surface cleaning method characterized by irradiating the surface of a material to be cleaned with laser light under a reduced pressure atmosphere of carbon monoxide.
JP14568583A 1983-08-11 1983-08-11 Purification of surface Pending JPS6037736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14568583A JPS6037736A (en) 1983-08-11 1983-08-11 Purification of surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14568583A JPS6037736A (en) 1983-08-11 1983-08-11 Purification of surface

Publications (1)

Publication Number Publication Date
JPS6037736A true JPS6037736A (en) 1985-02-27

Family

ID=15390717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14568583A Pending JPS6037736A (en) 1983-08-11 1983-08-11 Purification of surface

Country Status (1)

Country Link
JP (1) JPS6037736A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376333A (en) * 1986-09-18 1988-04-06 Fujitsu Ltd Pretreatment of semiconductor substrate
JPS63204729A (en) * 1987-02-20 1988-08-24 Fujitsu Ltd Dry cleaning method for semiconductor substrate
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
WO1993019888A1 (en) * 1992-03-31 1993-10-14 Cauldron Limited Partnership Removal of surface contaminants by irradiation
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376333A (en) * 1986-09-18 1988-04-06 Fujitsu Ltd Pretreatment of semiconductor substrate
JPS63204729A (en) * 1987-02-20 1988-08-24 Fujitsu Ltd Dry cleaning method for semiconductor substrate
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
WO1993019888A1 (en) * 1992-03-31 1993-10-14 Cauldron Limited Partnership Removal of surface contaminants by irradiation

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