JP2000077376A - Ultrasonic cleaning method and its device - Google Patents
Ultrasonic cleaning method and its deviceInfo
- Publication number
- JP2000077376A JP2000077376A JP10242146A JP24214698A JP2000077376A JP 2000077376 A JP2000077376 A JP 2000077376A JP 10242146 A JP10242146 A JP 10242146A JP 24214698 A JP24214698 A JP 24214698A JP 2000077376 A JP2000077376 A JP 2000077376A
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- JP
- Japan
- Prior art keywords
- cleaning
- ultrasonic
- water
- gas
- ultrasonic cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、洗浄水で満たされ
た洗浄槽内に被洗浄水を配置し、洗浄水を介して超音波
を当該被洗浄物に照射することにより被洗浄物の洗浄を
行う超音波洗浄方法及びその装置に関し、特に、パーテ
ィクルの除去効率を上げ、半導体素子製造工程の歩留ま
りを向上させることを可能とする超音波洗浄方法及びそ
の装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to cleaning of a cleaning object by arranging the cleaning water in a cleaning tank filled with the cleaning water and irradiating the cleaning object with ultrasonic waves through the cleaning water. The present invention relates to an ultrasonic cleaning method and an apparatus therefor, and more particularly, to an ultrasonic cleaning method and an apparatus thereof capable of increasing particle removal efficiency and improving the yield of a semiconductor element manufacturing process.
【０００２】[0002]
【従来の技術】半導体素子製造工程内における洗浄処理
作業は、半導体素子の性能や歩留まりの向上を実現する
ためにはいまや欠くことができない作業の一つとなって
おり、現在までに種々の方法が提案されている。2. Description of the Related Art A cleaning process in a semiconductor device manufacturing process has become one of the indispensable operations for improving the performance and yield of semiconductor devices. Proposed.
【０００３】中でも超音波を利用した洗浄方法は、付着
した汚れが他の洗浄方法に比べ比較的容易に除去できる
こと、装置を小型化できること等の多くの利点により、
広く利用されている。[0003] Above all, the cleaning method using ultrasonic waves has many advantages such as the fact that the adhered dirt can be removed relatively easily compared to other cleaning methods, and the apparatus can be downsized.
Widely used.
【０００４】以下、図７を用いて、現在までの超音波洗
浄装置の構成とその動作原理について説明する。[0004] The configuration of an ultrasonic cleaning apparatus up to now and its operating principle will be described below with reference to FIG.
【０００５】図７は、典型的な超音波洗浄装置の構成図
を示す。FIG. 7 shows a configuration diagram of a typical ultrasonic cleaning apparatus.
【０００６】従来までの超音波洗浄装置は、超音波洗浄
装置本体１と、当該超音波洗浄装置本体１に組み込まれ
た超音波発振盤３と、当該超音波発振盤３上に配置され
た間接槽５と、被洗浄物１３を入れるための当該間接槽
５上に配置された洗浄槽７と、当該被洗浄槽７内に洗浄
水をオーバーフロー供給するための洗浄水供給口９と、
当該洗浄槽７よりオーバーフローした洗浄水Ａ１を廃棄
するドレイン口１１から構成される。The conventional ultrasonic cleaning apparatus includes an ultrasonic cleaning apparatus main body 1, an ultrasonic oscillation board 3 incorporated in the ultrasonic cleaning apparatus main body 1, and an indirect device arranged on the ultrasonic oscillation board 3. A tank 5, a cleaning tank 7 disposed on the indirect tank 5 for receiving the object to be cleaned 13, a cleaning water supply port 9 for overflowing and supplying cleaning water into the tank 7 to be cleaned,
It is composed of a drain port 11 for discarding the washing water A1 overflowing from the washing tank 7.
【０００７】洗浄作業を行う際は、被洗浄物１３を洗浄
槽７内部に導入し、洗浄水供給口９より洗浄水を洗浄槽
７内部にオーバーフロー供給する。オーバーフローした
洗浄水Ａ１は、ドレイン口１１を通り装置外部に廃棄さ
れる。次に、超音波発振盤３を動作させることにより、
超音波Ｂを発振させる。発振した超音波Ｂは間接槽５と
洗浄槽７を介して洗浄槽７内の洗浄水に伝導し、被洗浄
物１３表面に付着した汚れは、洗浄水に伝導した超音波
により発生するキャビテーション等の作用により、該表
面から除去される。除去された汚れは、オーバーフロー
した洗浄水Ａ１と共に、ドレイン口１１を通して装置外
に運ばれる。汚れの除去が完了したならば、洗浄槽７よ
り被洗浄物１３を取り出し、被洗浄物１３を乾燥させ一
連の洗浄作業は完了する。When performing the cleaning operation, the cleaning target 13 is introduced into the cleaning tank 7, and the cleaning water is supplied from the cleaning water supply port 9 into the cleaning tank 7 in an overflow manner. The overflowed washing water A1 is discarded outside the apparatus through the drain port 11. Next, by operating the ultrasonic oscillation board 3,
The ultrasonic wave B is oscillated. The oscillated ultrasonic waves B are transmitted to the cleaning water in the cleaning tank 7 via the indirect tank 5 and the cleaning tank 7, and the dirt attached to the surface of the object 13 to be cleaned is cavitation generated by the ultrasonic waves transmitted to the cleaning water. Is removed from the surface. The removed dirt is carried out of the apparatus through the drain port 11 together with the overflowing cleaning water A1. When the removal of the dirt is completed, the object to be cleaned 13 is taken out of the cleaning tank 7 and the object to be cleaned 13 is dried to complete a series of cleaning operations.
【０００８】[0008]
【発明が解決しようとする課題】半導体製造工程におい
ては、通常、洗浄水として洗浄水内の溶存気体（分子状
の気体）を可及的に除去した脱ガス水を利用する。以下
に、洗浄水内の溶存気体の除去を行う理由について述べ
る。In the semiconductor manufacturing process, degassed water from which dissolved gas (molecular gas) in the wash water is removed as much as possible is usually used as the wash water. The reason why the dissolved gas in the cleaning water is removed will be described below.
【０００９】（１）溶存気体が過剰に存在した場合、気
体の種類によっては、被洗浄表面と溶存気体間で予期せ
ぬ化学反応が生じ、溶存気体が素子特性を劣化させる可
能性がある。例えば、溶存気体として溶存酸素が多く存
在している場合には、半導体表面が酸化され、素子特性
に重大な影響を及ぼす。(1) When an excessive amount of dissolved gas is present, an unexpected chemical reaction may occur between the surface to be cleaned and the dissolved gas depending on the type of gas, and the dissolved gas may deteriorate device characteristics. For example, when a large amount of dissolved oxygen is present as a dissolved gas, the semiconductor surface is oxidized, which has a significant effect on device characteristics.
【００１０】（２）溶存気体が存在する洗浄水を用いる
場合、液体内に溶存している気体の組成を常に一定に管
理しない限りは、素子特性のバラツキ、歩留まりに影響
が生じる。しかしながら、気体の組成を管理すること
は、現在確立されているプロセスに対し大きな変更を要
求するために、現段階では技術的に困難を伴う。(2) In the case of using cleaning water containing a dissolved gas, unless the composition of the gas dissolved in the liquid is always maintained at a constant level, variations in device characteristics and effects on the yield occur. However, managing the composition of the gas is technically challenging at this stage because it requires significant changes to currently established processes.
【００１１】上記の理由により、現在、半導体製造工程
において超音波洗浄を行う際には、脱ガス水を用いるこ
とが主流となっている。For the above reasons, currently, when ultrasonic cleaning is performed in a semiconductor manufacturing process, degassing water is mainly used.
【００１２】しかしながら、洗浄水内の溶存気体を除去
すると逆に、超音波洗浄の際に発生するキャビテーショ
ン作用が抑えられ、本来の目的であるパーティクル除去
効果が溶存気体が存在する場合に比べ低下するという問
題が生じる。これは、キャビテーション作用が溶存気体
を伴って生じる現象であることに由来し、溶存気体の減
少によりその作用が生じにくくなっているためである。However, when the dissolved gas in the cleaning water is removed, on the contrary, the cavitation effect generated in the ultrasonic cleaning is suppressed, and the original effect of removing particles is reduced as compared with the case where the dissolved gas is present. The problem arises. This is because the cavitation effect is a phenomenon that occurs with dissolved gas, and the effect is less likely to occur due to a decrease in dissolved gas.
【００１３】本発明は上記の問題点を解決するためにな
されたもので、洗浄水の中でも、特に、脱ガス水を用い
た超音波洗浄方法のパーティクル除去効率を向上させる
ことを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to improve the particle removal efficiency of an ultrasonic cleaning method using degassed water among cleaning waters.
【００１４】[0014]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明の超音波洗浄方法の特徴は、洗浄を行うに
あたって、被洗浄物を配置した洗浄水内の気体の溶解度
を小さくすることにある。In order to achieve the above object, the feature of the ultrasonic cleaning method of the present invention is to reduce the solubility of gas in cleaning water in which an object to be cleaned is disposed when performing cleaning. It is in.
【００１５】さらに、本発明の超音波洗浄装置は、被洗
浄物を配置した洗浄水内の気体の溶解度を小さくする手
段を備えたことに特徴を有する。Further, the ultrasonic cleaning apparatus according to the present invention is characterized in that a means for reducing the solubility of gas in the cleaning water in which the object to be cleaned is arranged is provided.
【００１６】上記構成によれば、脱ガス水中に不可避的
に含有される溶存気体を脱ガス水中に発生させることに
より、キャビテーション等のパーティクル除去メカニズ
ムの発生が促進され、パーティクルの除去効率及び半導
体素子製造工程の歩留まりを向上させることができる。According to the above configuration, the generation of a particle removal mechanism such as cavitation is promoted by generating a dissolved gas inevitably contained in the degassed water in the degassed water, thereby improving the particle removal efficiency and the semiconductor device. The yield of the manufacturing process can be improved.
【００１７】[0017]
【発明の実施の形態】以下、本発明の一実施形態を図面
に基づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.
【００１８】始めに、本実施形態の超音波洗浄装置の構
成について説明する。First, the configuration of the ultrasonic cleaning apparatus according to the present embodiment will be described.
【００１９】図１乃至図４は、本発明の一実施形態であ
る、超音波洗浄装置の構成及び動作を示す図である。FIGS. 1 to 4 are views showing the configuration and operation of an ultrasonic cleaning apparatus according to an embodiment of the present invention.
【００２０】本装置は、図１に示すように、超音波洗浄
装置本体１と、該超音波洗浄装置本体１に組み込まれた
超音波発振盤３と、該超音波発振盤３上に配置された間
接槽５と、被洗浄物１３を入れるための、該間接槽５上
に配置された洗浄槽７と、脱ガス水を加熱するための加
熱手段１５と、該洗浄槽７内に加熱した脱ガス水をオー
バーフロー供給するための洗浄水供給口９と、該洗浄槽
７よりオーバーフローした脱ガス水を廃棄するためのド
レイン口１１と、該超音波洗浄装置本体１に備えられた
開閉可能な密閉扉（密閉手段）１９と、該超音波洗浄装
置本体１内を減圧する減圧ポンプ（排気手段）１７とか
ら構成されている。As shown in FIG. 1, the present apparatus is provided with an ultrasonic cleaning apparatus main body 1, an ultrasonic oscillation board 3 incorporated in the ultrasonic cleaning apparatus main body 1, and disposed on the ultrasonic oscillation board 3. The indirect tank 5, a cleaning tank 7 for placing the object 13 to be cleaned, the cleaning tank 7 disposed on the indirect tank 5, a heating unit 15 for heating the degassed water, and heating in the cleaning tank 7. A cleaning water supply port 9 for supplying degassed water in overflow, a drain port 11 for discarding degassed water overflowing from the cleaning tank 7, and an openable / closable port provided in the ultrasonic cleaning device main body 1. The ultrasonic cleaning apparatus main body 1 includes a sealing door (sealing means) 19 and a decompression pump (exhaust means) 17 for reducing the pressure inside the ultrasonic cleaning apparatus main body 1.
【００２１】次に、図１乃至図４を用いて、本装置の動
作原理について説明する。Next, the principle of operation of the present apparatus will be described with reference to FIGS.
【００２２】第１に、図１に示すように、密閉扉１９を
開き、被洗浄物１３を洗浄槽７内部に導入する。First, as shown in FIG. 1, the sealing door 19 is opened, and the object 13 to be cleaned is introduced into the cleaning tank 7.
【００２３】第２に、図２に示すように、脱ガス水に対
する気体の溶解度を低下させるために、加熱手段１５に
より加熱された脱ガス水を洗浄水供給口９から洗浄槽７
内へオーバーフロー供給し、さらには、密閉扉１９を閉
め、減圧ポンプ１７を用いて、超音波洗浄装置本体１内
部を減圧する。Second, as shown in FIG. 2, in order to reduce the solubility of gas in the degassed water, the degassed water heated by the heating means 15 is supplied from the cleaning water supply port 9 to the cleaning tank 7.
The inside of the ultrasonic cleaning apparatus main body 1 is depressurized using the depressurizing pump 17.
【００２４】第３に、図３に示すように、超音波発振盤
３を動作させることにより、超音波Ｂを発振させる。発
振した超音波Ｂは、間接槽５を介して、洗浄槽７内の脱
ガス水に伝導し、超音波により発生したキャビテーショ
ンの作用により、被洗浄物１３表面に付着した汚れは該
表面から除去される。除去された汚れは、オーバーフロ
ーした脱ガス水Ａと共に、ドレイン口１１を通して装置
外に運ばれる。Third, as shown in FIG. 3, the ultrasonic oscillator 3 is operated to generate ultrasonic waves B. The oscillated ultrasonic waves B are transmitted to the degassed water in the cleaning tank 7 through the indirect tank 5, and the cavitation generated by the ultrasonic waves removes dirt attached to the surface of the object 13 to be cleaned. Is done. The removed dirt is carried out of the apparatus through the drain port 11 together with the overflowed degassed water A.
【００２５】汚れの除去が完了したならば、図４に示す
ように、超音波洗浄装置内部を大気圧に戻した後に密閉
扉１９を開け、洗浄槽７より被洗浄物１３を取り出し、
被洗浄物１３を乾燥させ、一連の洗浄作業は完了する。When the removal of dirt is completed, as shown in FIG. 4, the inside of the ultrasonic cleaning device is returned to the atmospheric pressure, the sealing door 19 is opened, and the object 13 to be cleaned is taken out of the cleaning tank 7.
The object to be cleaned 13 is dried, and a series of cleaning operations is completed.
【００２６】本実施形態では、脱ガス水を加熱し、さら
に脱ガス水を減圧雰囲気下に置いたが、脱ガス水に対す
る気体の溶解度が低下する限りにおいてはどちらか一方
の条件であっても全く問題はない。すなわち、脱ガス水
の加熱のみ、あるいは、脱ガス水を減圧雰囲気下に置く
のみの条件であってもよい。In the present embodiment, the degassed water is heated and the degassed water is placed under a reduced pressure atmosphere. However, as long as the solubility of the gas in the degassed water is reduced, the conditions are not limited. There is no problem at all. That is, the condition may be that only the degassed water is heated or the degassed water is only placed in a reduced pressure atmosphere.
【００２７】また、本発明においては、脱ガス水中に溶
存気体を発生させることから、従来技術で述べたような
半導体表面の酸化等の問題が考えられるが、本発明にお
いて発生する溶存気体の大部分は大気から溶け込んだ窒
素であることから、溶存酸素による酸化の程度は十分に
無視できる。Further, in the present invention, since a dissolved gas is generated in the degassed water, problems such as oxidation of the semiconductor surface as described in the prior art can be considered, but the amount of the dissolved gas generated in the present invention is large. Since the portion is nitrogen dissolved from the atmosphere, the degree of oxidation by dissolved oxygen can be sufficiently ignored.
【００２８】［実験例］次に、実際に本装置を用いた実
験結果を以下に示す。[Experimental Example] Next, experimental results using the present apparatus are shown below.
【００２９】図５は、超音波出力値の変化に伴う、従来
の超音波洗浄装置と本発明を実施した超音波洗浄装置そ
れぞれのパーティクル除去効率の変化を示し、横軸は超
音波出力値［Ｗ］、縦軸はパーティクル除去効率
［％］、黒四角は本発明を実施した超音波洗浄装置の実
験値、黒三角は従来の超音波洗浄装置の実験値を表す。FIG. 5 shows the change in the particle removal efficiency of each of the conventional ultrasonic cleaning device and the ultrasonic cleaning device embodying the present invention with the change in the ultrasonic output value. The horizontal axis represents the ultrasonic output value [ W], the vertical axis represents the particle removal efficiency [%], the black squares represent the experimental values of the ultrasonic cleaning device embodying the present invention, and the black triangles represent the experimental values of the conventional ultrasonic cleaning device.
【００３０】本実験は、超音波出力値［Ｗ］を０〜６０
０［Ｗ］の値の範囲で調査を行い、パーティクル除去効
率［％］は、両超音波洗浄装置による超音波洗浄前後に
おける被洗浄物表面に存在するパーティクル数を、パー
ティクルカウンターにより数えることにより見積もっ
た。In this experiment, the ultrasonic output value [W] was set to 0 to 60.
Investigations were performed within the range of 0 [W], and the particle removal efficiency [%] was estimated by counting the number of particles existing on the surface of the object to be cleaned before and after ultrasonic cleaning by both ultrasonic cleaning devices using a particle counter. Was.
【００３１】尚、本発明を実施した超音波洗浄装置は７
０［℃］に加熱した脱ガス水、従来の超音波洗浄装置は
室温（液温２４［℃］）の脱ガス水を用い、被洗浄物に
は半導体ウェハを適用した。Incidentally, the ultrasonic cleaning apparatus embodying the present invention has a
Degassed water heated to 0 [° C.], degassed water at room temperature (liquid temperature 24 [° C.]) in a conventional ultrasonic cleaning apparatus, and a semiconductor wafer were used as an object to be cleaned.
【００３２】図５からわかるように、本発明を実施した
超音波洗浄装置では従来の超音波洗浄装置よりも高いパ
ーティクル除去効率を得ることができる。As can be seen from FIG. 5, the ultrasonic cleaning apparatus embodying the present invention can achieve higher particle removal efficiency than the conventional ultrasonic cleaning apparatus.
【００３３】次に、本発明の有効性をさらに確認するた
めに、従来装置と本実施例の装置を用いてＤＲＡＭ製造
工程中の洗浄作業を行った場合の、ＤＲＡＭ製造工程の
歩留まりについての調査を行った。Next, in order to further confirm the effectiveness of the present invention, an investigation was made on the yield of the DRAM manufacturing process when cleaning was performed during the DRAM manufacturing process using the conventional apparatus and the apparatus of the present embodiment. Was done.
【００３４】図６は、従来装置と本実施形態の装置を用
いてＤＲＡＭ製造工程中の洗浄作業を行った場合のそれ
ぞれの歩留まりを比較した図を示す。FIG. 6 is a diagram showing a comparison of the respective yields when a cleaning operation is performed during a DRAM manufacturing process using the conventional apparatus and the apparatus of the present embodiment.
【００３５】図６からわかるように、実験を行った全て
のサンプルにおいて、本発明の実施形態によるＤＲＡＭ
製造工程の歩留まりの向上を実現することができた。As can be seen from FIG. 6, in all the samples subjected to the experiment, the DRAM according to the embodiment of the present invention was used.
It was possible to improve the yield of the manufacturing process.
【００３６】以上の結果より、発明者らは、超音波洗浄
時に脱ガス水に対する気体の溶解度を減少させることに
より、脱ガス水中に僅かに溶け込んだ気体の発生が促進
されることから、パーティクル除去効果が向上し、半導
体素子製造工程の歩留まりが改善できるという知見を得
た。From the above results, the inventors have found that by reducing the solubility of gas in degassed water during ultrasonic cleaning, the generation of gas slightly dissolved in degassed water is promoted. It has been found that the effect is improved and the yield of the semiconductor element manufacturing process can be improved.
【００３７】[0037]
【発明の効果】上記のように、本発明によれば、脱ガス
水に対する気体の溶解度を超音波洗浄時に減少させるこ
とによりキャビテーションの発生が促進され、パーティ
クル除去効率及び半導体素子製造工程の歩留まりを向上
させることができる。As described above, according to the present invention, the occurrence of cavitation is promoted by reducing the solubility of gas in degassed water at the time of ultrasonic cleaning, and the particle removal efficiency and the yield of the semiconductor device manufacturing process are reduced. Can be improved.
【図１】本発明を実施した超音波洗浄装置の構成及び動
作を示す図である。FIG. 1 is a diagram showing the configuration and operation of an ultrasonic cleaning apparatus embodying the present invention.
【図２】本発明を実施した超音波洗浄装置の構成及び動
作を示す図である。FIG. 2 is a diagram showing the configuration and operation of an ultrasonic cleaning device embodying the present invention.
【図３】本発明を実施した超音波洗浄装置の構成及び動
作を示す図である。FIG. 3 is a diagram illustrating a configuration and an operation of an ultrasonic cleaning apparatus embodying the present invention.
【図４】本発明を実施した超音波洗浄装置の構成及び動
作を示す図である。FIG. 4 is a diagram showing the configuration and operation of an ultrasonic cleaning apparatus embodying the present invention.
【図５】超音波出力値の変化に伴う、従来の超音波洗浄
装置と本発明を実施した超音波洗浄装置それぞれのパー
ティクル除去効率の変化を示す図である。FIG. 5 is a diagram showing changes in particle removal efficiency of a conventional ultrasonic cleaning device and an ultrasonic cleaning device embodying the present invention, as the ultrasonic output value changes.
【図６】従来の装置と本発明を実施した装置をＤＲＡＭ
製造工程中の洗浄作業に利用した場合のそれぞれの歩留
まりを比較した図である。FIG. 6 shows a conventional device and a device embodying the present invention using a DRAM.
It is the figure which compared each yield when used for the cleaning work in a manufacturing process.
【図７】従来の超音波洗浄装置の構成を示す図である。FIG. 7 is a diagram showing a configuration of a conventional ultrasonic cleaning device.
１ 超音波洗浄装置本体 ３ 超音波発振盤 ５ 間接槽 ７ 洗浄槽 ９ 洗浄水供給口 １１ ドレイン口 １３ 被洗浄物 １５ 加熱手段 １７ 減圧ポンプ Ａ オーバーフローした脱ガス水 Ａ１ オーバーフローした洗浄水 Ｂ 超音波 DESCRIPTION OF SYMBOLS 1 Ultrasonic cleaning apparatus main body 3 Ultrasonic oscillation board 5 Indirect tank 7 Cleaning tank 9 Cleaning water supply port 11 Drain port 13 Object to be cleaned 15 Heating means 17 Decompression pump A Overflowed degassed water A1 Overflowed cleaning water B Ultrasound
───────────────────────────────────────────────────── フロントページの続き (72)発明者 西村 修一 三重県四日市市山之一色町字中龍宮800番 地 株式会社東芝四日市工場内 (72)発明者 福井 博之 三重県四日市市山之一色町字中龍宮800番 地 株式会社東芝四日市工場内 (72)発明者 齋藤 誠司 三重県四日市市山之一色町字中龍宮800番 地 株式会社東芝四日市工場内 (72)発明者 横井 正幸 神奈川県川崎市幸区堀川町66番２ 東芝エ ンジニアリング株式会社内 Ｆターム(参考） 3B201 AA03 AB08 BB04 BB83 BB94 CB12 CC11 CD11 ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Shuichi Nishimura 800 Nakano-ryu, Yamano Isshiki-cho, Yokkaichi City, Mie Prefecture Inside Yokkaichi Plant, Toshiba Corporation (72) Inventor Hiroyuki Fukui Character, Yamano Isshiki Town, Yokkaichi City, Mie Prefecture 800, Churyu-gu Shrine, Toshiba Corporation Yokkaichi Plant (72) Inventor Seiji Saito 800, Chuo, Miyano-shi, Yokkaichi, Mie Pref., Japan Toshiba Yokkaichi Plant, Co., Ltd. (72) Inventor Masayuki Yokoi, Kawasaki-shi, Kanagawa Prefecture 66-2 Horikawa-cho, Ward F-term in Toshiba Engineering Corporation (reference) 3B201 AA03 AB08 BB04 BB83 BB94 CB12 CC11 CD11
Claims (6)
を配置し、洗浄水を介して超音波を当該被洗浄物に照射
することにより被洗浄物の洗浄を行う超音波洗浄方法に
おいて、 洗浄を行うにあたり、当該被洗浄物を配置した洗浄水内
の気体の溶解度を低下させることを特徴とする超音波洗
浄方法。1. An ultrasonic cleaning method for arranging an object to be cleaned in a cleaning tank filled with cleaning water and irradiating the object with ultrasonic waves through the cleaning water to clean the object to be cleaned. 3. The ultrasonic cleaning method according to claim 1, wherein, in performing the cleaning, the solubility of gas in the cleaning water in which the object to be cleaned is arranged is reduced.
て、前記洗浄水を加熱することにより洗浄水内の気体の
溶解度を低下させることを特徴とする超音波洗浄方法。2. The ultrasonic cleaning method according to claim 1, wherein the solubility of the gas in the cleaning water is reduced by heating the cleaning water.
浄方法において、前記洗浄槽を減圧状態下に置くことに
より洗浄水内の気体の溶解度を低下させることを特徴と
する超音波洗浄方法。3. The ultrasonic cleaning method according to claim 1, wherein the solubility of gas in the cleaning water is reduced by placing the cleaning tank under reduced pressure. Method.
を配置し、洗浄水を介して超音波を当該被洗浄物に照射
することにより被洗浄物の洗浄を行う超音波洗浄方法に
おいて、 洗浄水内の気体の溶解度を減少させるための手段を備え
たことを特徴とする超音波洗浄装置。4. An ultrasonic cleaning method for arranging an object to be cleaned in a cleaning tank filled with cleaning water and irradiating the object with ultrasonic waves via the cleaning water to clean the object to be cleaned. 3. The ultrasonic cleaning apparatus according to claim 1, further comprising means for reducing the solubility of gas in the cleaning water.
るための手段は、洗浄水を加熱する加熱手段からなるこ
とを特徴とする請求項４に記載の超音波洗浄装置。5. The ultrasonic cleaning apparatus according to claim 4, wherein the means for reducing the solubility of the gas in the cleaning water comprises a heating means for heating the cleaning water.
るための手段は、 前記洗浄槽全体を覆うように設置された、外気の流入出
を制御するための密閉手段と、 前記密閉手段により覆われた内部の排気を行なうための
排気手段とを備えたことを特徴とする請求項４又は請求
項５に記載の超音波洗浄装置。6. The means for reducing the solubility of gas in the cleaning water includes: sealing means for controlling the inflow and outflow of outside air, which is provided so as to cover the entire cleaning tank; The ultrasonic cleaning apparatus according to claim 4 or 5, further comprising an exhaust unit for exhausting the covered inside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10242146A JP2000077376A (en) | 1998-08-27 | 1998-08-27 | Ultrasonic cleaning method and its device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10242146A JP2000077376A (en) | 1998-08-27 | 1998-08-27 | Ultrasonic cleaning method and its device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000077376A true JP2000077376A (en) | 2000-03-14 |
Family
ID=17085014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10242146A Withdrawn JP2000077376A (en) | 1998-08-27 | 1998-08-27 | Ultrasonic cleaning method and its device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000077376A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102513306A (en) * | 2011-12-30 | 2012-06-27 | 保定天威英利新能源有限公司 | Method for cleaning ceramic suction plates for handling solar cell slices |
| US8347901B2 (en) * | 2006-03-15 | 2013-01-08 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system and program storage medium |
| JP2013084667A (en) * | 2011-10-06 | 2013-05-09 | Hitachi Kokusai Denki Engineering:Kk | Ultrasonic processing apparatus and ultrasonic treatment method |
-
1998
- 1998-08-27 JP JP10242146A patent/JP2000077376A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8347901B2 (en) * | 2006-03-15 | 2013-01-08 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system and program storage medium |
| US20130152964A1 (en) * | 2006-03-15 | 2013-06-20 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system and program storage medium |
| US9358588B2 (en) | 2006-03-15 | 2016-06-07 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system and program storage medium |
| JP2013084667A (en) * | 2011-10-06 | 2013-05-09 | Hitachi Kokusai Denki Engineering:Kk | Ultrasonic processing apparatus and ultrasonic treatment method |
| CN102513306A (en) * | 2011-12-30 | 2012-06-27 | 保定天威英利新能源有限公司 | Method for cleaning ceramic suction plates for handling solar cell slices |
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