JPH02119224A - Treatment for reusing plasma dispersion plate - Google Patents
Treatment for reusing plasma dispersion plateInfo
- Publication number
- JPH02119224A JPH02119224A JP63274057A JP27405788A JPH02119224A JP H02119224 A JPH02119224 A JP H02119224A JP 63274057 A JP63274057 A JP 63274057A JP 27405788 A JP27405788 A JP 27405788A JP H02119224 A JPH02119224 A JP H02119224A
- Authority
- JP
- Japan
- Prior art keywords
- dispersion plate
- electrode
- plasma
- acid
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006185 dispersion Substances 0.000 title claims abstract description 72
- 238000011282 treatment Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000004140 cleaning Methods 0.000 claims abstract description 23
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 12
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000003513 alkali Substances 0.000 claims abstract description 4
- 230000001172 regenerating effect Effects 0.000 claims abstract 2
- 239000005416 organic matter Substances 0.000 claims description 5
- 238000004064 recycling Methods 0.000 claims description 5
- 238000009499 grossing Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 14
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 238000005342 ion exchange Methods 0.000 abstract 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 230000008929 regeneration Effects 0.000 description 7
- 238000011069 regeneration method Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 235000014593 oils and fats Nutrition 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- -1 trichlene Chemical compound 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はシリコンウェハのプラズマエツチングに使用
される分散板の再利用処理方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for recycling a dispersion plate used in plasma etching of silicon wafers.
一般に、シリコンウェハのプラズマエツチングを行う場
合には、プラズマをシリコンウェハの表面に均一に供給
するために分散板が使用される。Generally, when performing plasma etching of a silicon wafer, a dispersion plate is used to uniformly supply plasma to the surface of the silicon wafer.
この分散板に対しては多くの性能を要求され、特にプラ
ズマに対する耐腐食性に優れると共に、シリコンウェハ
を汚染するおそれのないものが必要とされる。この条件
を満たすものとして、炭化珪素焼結体の利用がすでに提
案されている。Many performances are required of this dispersion plate, and in particular, it is required to have excellent corrosion resistance against plasma and to be free from the risk of contaminating silicon wafers. The use of silicon carbide sintered bodies has already been proposed as a material that satisfies this condition.
そして、炭化珪素焼結体は耐腐食性に優れると言えども
、長期の使用によってはプラズマによる侵食が生じて恒
久的に使用するには限度があり、侵食が進行した場合に
は、高価であるにもかかわらず、やむなく廃棄されてい
る。Although silicon carbide sintered bodies are said to have excellent corrosion resistance, there is a limit to their permanent use due to plasma erosion due to long-term use, and if the corrosion progresses, they become expensive. Despite this, it has no choice but to be discarded.
そこで、この出願の発明者らは、プラズマによる侵食部
分を研削加工によって除去すると共に、分散板の電極を
薬品により分解することによって、分散板の再利用を図
ることを創案した。ところが、この再利用処理方法では
、分解された電極成分が焼結体内に浸透してしまってそ
の除去が困難になリ、前記電極成分が分散板に残存した
まま利用されると、シリコンウェハの汚染が生じるとい
う新たな問題が生じた。Therefore, the inventors of this application devised a method of reusing the dispersion plate by removing the portion eroded by plasma by grinding and decomposing the electrodes of the dispersion plate with chemicals. However, in this recycling treatment method, the decomposed electrode components penetrate into the sintered body, making it difficult to remove.If the electrode components are used while remaining on the dispersion plate, the silicon wafer will be damaged. A new problem arose: pollution.
この発明は上記の問題を解消するためになされたもので
あって、その目的は電極成分が分散板に。This invention was made in order to solve the above problem, and its purpose is to make the electrode component a dispersion plate.
浸透した場合でも、それを容易かつ確実に除去すること
ができ、プラズマによって侵食された分散板を確実に再
利用することが可能なプラズマエツチング用分散板の再
利用処理方法を提供することにある。An object of the present invention is to provide a reuse treatment method for a dispersion plate for plasma etching, which can easily and reliably remove the permeation even if it penetrates, and can reliably reuse a dispersion plate eroded by plasma. .
上記の目的を達成するために、この発明では、金属製の
電極を備えると共に、炭化珪素焼結体よりなるプラズマ
分散板を、使用後に再生するプラズマ分散板の再利用処
理方法であって、プラズマによる侵食部を平滑化する研
削工程と、超音波振動を与えながら酸又はアルカリによ
って前記電極を溶解する洗浄工程とを、分散板に付着し
た有機物の酸化処理工程に先立って遂行するようにして
いる。In order to achieve the above object, the present invention provides a plasma dispersion plate reuse treatment method that includes a metal electrode and regenerates a plasma dispersion plate made of a sintered silicon carbide body after use. A grinding process for smoothing the eroded portions caused by the dispersion plate and a cleaning process for dissolving the electrodes with acid or alkali while applying ultrasonic vibrations are performed prior to the oxidation treatment process for organic matter adhering to the dispersion plate. .
又、電極をアルミニュウム電極にした場合、洗浄工程で
は塩酸を使用することが望ましい。Further, when the electrode is an aluminum electrode, it is desirable to use hydrochloric acid in the cleaning step.
プラズマ分散板の侵食部は研削加工等によって平滑化さ
れる。又、プラズマ分散板に超音波振動を与えながら、
例えばアルミニュウム製電極を塩酸によって溶解すると
、溶解した電極成分が仮に分散板の気孔内に浸透した場
合でも、滞留することがなく、その分散板から確実に除
去される。そして、上記の二つの処理は分散板の酸化処
理に先立って行われ、前記研削加工等の際に使用される
研削液や作業者の手等から付着する有機物は酸化処理に
よって除去されると共に、電極の酸化が未然に防止され
る。The eroded portion of the plasma dispersion plate is smoothed by grinding or the like. Also, while applying ultrasonic vibration to the plasma dispersion plate,
For example, when an aluminum electrode is dissolved with hydrochloric acid, even if the dissolved electrode components penetrate into the pores of the dispersion plate, they will not remain and will be reliably removed from the dispersion plate. The above two treatments are performed prior to the oxidation treatment of the dispersion plate, and the organic matter adhering from the grinding fluid used during the grinding process, the operator's hands, etc. is removed by the oxidation treatment, and Oxidation of the electrode is prevented.
以下、本発明について詳細に説明する。The present invention will be explained in detail below.
先ず、プラズマエツチング装置について説明すると、第
２図に示すように、反応容器１の下方には電極２が配置
され、その上面にはシリコンウェハ３が載置されている
。電極２に対向するように、反応容器１の内部上方には
、炭化珪素焼結体よりなる分散板４が配置され、その分
散板４にはアルミニュウムを蒸着することによって形成
した電極５が設けられている。この電極５の構成材料と
しては、前記アルミニュウムの他に、銅、金、銀。First, the plasma etching apparatus will be explained. As shown in FIG. 2, an electrode 2 is arranged below a reaction vessel 1, and a silicon wafer 3 is placed on the upper surface of the electrode 2. A dispersion plate 4 made of a sintered silicon carbide body is disposed above the interior of the reaction vessel 1 so as to face the electrode 2, and an electrode 5 formed by vapor-depositing aluminum is provided on the dispersion plate 4. ing. The constituent materials of this electrode 5 include copper, gold, and silver in addition to the above-mentioned aluminum.
白金、パラジウム、鉛、＄１を、単体で、もしくはこれ
らの合金を使用できる。Platinum, palladium, lead, $1 can be used alone or in an alloy thereof.
そして、画電極２．５間に高周波電圧を印加すると共に
、供給口６から反応容器１内に四塩化ケイ素等のガスを
送り込んで、プラズマを生成すれば、そのプラズマが分
散板４によって容器１内に分散されて、シリコンウェハ
３の表面に均一に供給される。Then, a high frequency voltage is applied between the picture electrodes 2.5 and a gas such as silicon tetrachloride is sent into the reaction vessel 1 from the supply port 6 to generate plasma. The silicon wafer 3 is distributed uniformly over the surface of the silicon wafer 3.
さて、上記のようなプラズマエツチングが長期にわたっ
て行われると、第３図に示すように、分散板４の下面が
プラズマにより侵食されて、窪み７が生じる。この窪み
７の深さが所定値（例えば０．６ｍｍ）に達すると、分
散板４の機能が低下するため、エツチング装置から取り
外されて、第１図に示す再利用処理が施される。Now, if the plasma etching described above is carried out for a long period of time, the lower surface of the dispersion plate 4 is eroded by the plasma and a depression 7 is formed, as shown in FIG. When the depth of the recess 7 reaches a predetermined value (for example, 0.6 mm), the function of the dispersion plate 4 deteriorates, so it is removed from the etching apparatus and subjected to the reuse process shown in FIG.
この再利用処理のための第１工程では、第１図に示すよ
うに、電極５の構成材料に応じて選択された所定濃度の
酸もしくはアルカリ洗浄液に分散板４が浸漬され、超音
波が分散板４に加えられて、電極５の金属成分が溶解さ
れる。この時に使用する酸及びアルカリとしては、塩酸
、硝酸、硫酸。In the first step for this reuse treatment, as shown in FIG. Added to plate 4, the metal component of electrode 5 is melted. The acids and alkalis used at this time include hydrochloric acid, nitric acid, and sulfuric acid.
弗酸、水酸化ナトリウム及び水酸化カリウム等があり、
アルミニュウム製電極には塩酸若しくはアルカリが組み
合わされる。そして、その洗浄液の濃度は２重量％以上
、望ましくは１０重壁量以上に調製される。更に、洗浄
液の温度は５０℃以下であることが望ましい。Hydrofluoric acid, sodium hydroxide, potassium hydroxide, etc.
Aluminum electrodes are combined with hydrochloric acid or alkali. The concentration of the cleaning solution is adjusted to 2% by weight or more, preferably 10% by weight or more. Furthermore, it is desirable that the temperature of the cleaning liquid is 50°C or less.
又、分散板４の単位重量当たりの超音波の出力は０．５
Ｗ／ｇ以上であることが望ましく、超音波処理時間は分
散板４の空隙率等に応じて５分〜１２０分に設定される
が、６０分以上であることが望ましい。Further, the ultrasonic output per unit weight of the dispersion plate 4 is 0.5
It is desirable that it is W/g or more, and the ultrasonic treatment time is set to 5 minutes to 120 minutes depending on the porosity of the dispersion plate 4, etc., but it is desirable that it is 60 minutes or more.
第２工程では、分散板４に超音波を印加しながら水洗す
ることにより、第１工程で使用した洗浄液が除去される
。第３工程では、第３図に示すように、窪み７の周囲が
平面研削盤によって除去されて、略一定の厚さの再生分
散板８が形成される。In the second step, the cleaning liquid used in the first step is removed by washing the dispersion plate 4 with water while applying ultrasonic waves. In the third step, as shown in FIG. 3, the area around the depression 7 is removed by a surface grinder to form a regeneration dispersion plate 8 having a substantially constant thickness.
次いで、この再生分散板８は第４工程に送られ、酸化雰
囲気下で熱処理されて、研削液や砥石又は作業者の手等
から付着した有機物（油脂類を含む）の燃焼除去処理が
行われる。Next, this regenerated dispersion plate 8 is sent to a fourth step, where it is heat treated in an oxidizing atmosphere to burn off organic substances (including oils and fats) adhering to it from grinding fluid, grindstones, workers' hands, etc. .
引き続き、第５工程では、次の第６エ程で洗浄液として
使用されるトリクレンと再生分散板８との親和性を高め
るために、再生分散板８に超音波を印加しながらアセト
ンによる洗浄が行われる。Subsequently, in the fifth step, cleaning with acetone is performed while applying ultrasonic waves to the regeneration dispersion plate 8 in order to increase the affinity between the regeneration dispersion plate 8 and trichlene, which will be used as a cleaning liquid in the next sixth step. be exposed.
第６エ程では、再生分散板８に残存する油脂類を除去す
るために、超音波を印加しながらトリクレンによる洗浄
が行われる。第７エ程では、トリクレンを除去するため
に、分散板８に超音波を印加しながらアセトンによる洗
浄が行われる。第８工程では、アセトンを除去するため
に、分散板８に超音波を印加しながら水洗が行われる。In the sixth step, in order to remove oils and fats remaining on the regeneration dispersion plate 8, cleaning with trichlene is performed while applying ultrasonic waves. In the seventh step, in order to remove trichlene, cleaning with acetone is performed while applying ultrasonic waves to the dispersion plate 8. In the eighth step, in order to remove acetone, water washing is performed while applying ultrasonic waves to the dispersion plate 8.
第９工程は、第３工程で使用した研削用工具からタング
ステン、クロム、コバルト、モリブデン、ニッケル等の
金属が分散板８に付着するような場合に必要に応じて実
施され、超音波印加状態で、弗硝酸による洗浄が行われ
る。The 9th step is carried out as necessary when metals such as tungsten, chromium, cobalt, molybdenum, nickel, etc. adhere to the dispersion plate 8 from the grinding tool used in the 3rd step. , cleaning with fluoronitric acid is performed.
第１０工程では、超音波印加状態で、分散板８が水洗さ
れて、前記弗硝酸が除去される。そして、最後の第１１
工程において、分散板８が乾燥された後、再生分散板８
に電極５が再度形成されて再生処理が終了する。In the tenth step, the dispersion plate 8 is washed with water while applying ultrasonic waves to remove the fluorinic acid. And the last 11th
In the process, after the dispersion plate 8 is dried, the regenerated dispersion plate 8
The electrode 5 is formed again, and the regeneration process is completed.
上記のように、この発明の再生処理方法では、有機物を
燃焼（酸化）させる第４工程に先立って、電極５を溶解
するための酸洗浄が第１工程で行われるため、電極成分
の酸化を未然に防くことができる。この点を考慮すれば
、第１工程及び第３工程の実施内容の入れ換えも可能で
あることは明白である。As described above, in the regeneration treatment method of the present invention, acid cleaning for dissolving the electrode 5 is performed in the first step prior to the fourth step of burning (oxidizing) organic matter, so that the oxidation of the electrode components is prevented. It can be prevented. Considering this point, it is clear that the contents of the first step and the third step can be interchanged.
次に実施例及び比較例について説明する。Next, Examples and Comparative Examples will be described.
プラズマエツチング用分散板として使用された炭化珪素
焼結体は直径２００ｍｍ、厚さ２ｍｍの大きさであって
、密度は１．７５ｇ／ｃｎＴ、重量は１１０ｇであった
。この分散板４の再利用処理を行うに際し、先ず、電子
工業用濃塩酸をイオン交換水によって１７．５重量％ま
で希釈して洗浄用塩酸水溶液を調製し、これを満たした
石英ガラス容器中に使用済み分散板４を浸漬した。そし
て、この石英ガラス容器を超音波浴槽に入れて、その槽
内を２０℃に保ち、且つ超音波の出力を０．９Ｗ／ｇに
設定して、約１時間にわたる酸洗浄を行った（第１工程
）。The silicon carbide sintered body used as a dispersion plate for plasma etching had a diameter of 200 mm, a thickness of 2 mm, a density of 1.75 g/cnT, and a weight of 110 g. When reusing the dispersion plate 4, first dilute concentrated hydrochloric acid for the electronics industry to 17.5% by weight with ion-exchanged water to prepare an aqueous solution of hydrochloric acid for cleaning, and place it in a quartz glass container filled with the solution. The used dispersion plate 4 was immersed. Then, this quartz glass container was placed in an ultrasonic bath, the inside of the bath was kept at 20°C, and the ultrasonic output was set to 0.9 W/g, and acid cleaning was performed for about 1 hour ( 1 step).
次いで、酸洗浄液から取り出した分散板を、イオン交換
水を満たした超音波洗浄器浴槽に浸漬し、１５分にわた
って超音波を印加した後、イオン交換水を清浄なものに
交換した。この処理を４回繰り返すことによって水洗し
たく第２工程）。次に、この分散板４の電＋！ｉ ５と
は反対側の面を研削して窪み７の周辺部分を除去した後
、酸化雰囲気下において９００℃で１時間加熱し、有機
物の燃焼除去を行った（第３．第４工程）。引き続き、
電子工業用アセトン及び電子工業用トリクレンを使用し
、アセトン、トリクレン、アセトンの順に前記浴槽に入
れて、その温度を２０℃に保った状態で、５分間ずつ超
音波を印加した（第５〜第７エ程）。Next, the dispersion plate taken out from the acid cleaning solution was immersed in an ultrasonic cleaner bath filled with ion-exchanged water, and after applying ultrasonic waves for 15 minutes, the ion-exchanged water was replaced with clean one. This process is repeated 4 times to wash the product (2nd step). Next, the voltage of this dispersion plate 4 is +! After grinding the surface opposite to i 5 to remove the peripheral portion of the depression 7, heating was performed at 900° C. for 1 hour in an oxidizing atmosphere to burn and remove organic matter (third and fourth steps). continuation,
Using acetone for the electronic industry and trichlene for the electronic industry, acetone, trichlene, and acetone were placed in the above bath in that order, and while the temperature was maintained at 20°C, ultrasonic waves were applied for 5 minutes each (5th to 5th to 7 steps).
次に、前記浴槽から取り出した分散板を、イオン交換水
を満たした浴槽に入れて、５分間にわたり、超音波を印
加して水洗した（第８工程）。更に、弗酸、硝酸及び水
を１対１対６の割合で混合した混酸水溶液に分散板を浸
漬し、その水溶液を２０℃に保ちながら、５分間にわた
って超音波を印加することにより、酸洗浄を行った（第
９工程）。そして、前記第４工程と同様の水洗を行った
後、１２０℃に保った乾燥器内にて焼結体を乾燥した（
第１０．第１１工程）。Next, the dispersion plate taken out from the bathtub was placed in a bathtub filled with ion-exchanged water, and washed with water by applying ultrasonic waves for 5 minutes (eighth step). Furthermore, acid cleaning was performed by immersing the dispersion plate in a mixed acid aqueous solution containing hydrofluoric acid, nitric acid, and water in a ratio of 1:1:6, and applying ultrasonic waves for 5 minutes while maintaining the aqueous solution at 20°C. (9th step). After washing with water in the same manner as in the fourth step, the sintered body was dried in a dryer maintained at 120°C (
10th. 11th step).
上記のように処理した分散仮に含まれる不純物を、高周
波プラズマ（Ｉｎｄｕｃｔｉｖｅｌｙ Ｃｏｕｐｌｅｄ
Ｐｌａｓｍａ）発光分光分析法によって分析した。その
結果を表１に示す。尚、この表１には、比較のために、
プラズマエツチング用分散板として使用する以前の焼結
体部分に含まれる不純物の濃度（ｐｐｍ単位）及び第３
工程の研削までを実施した分散板４に含まれる不純物の
濃度が併せて記載されている。The impurities contained in the dispersion treated as above are removed by high frequency plasma (inductively coupled plasma).
The analysis was performed by plasma) emission spectroscopy. The results are shown in Table 1. For comparison, Table 1 shows the following:
The concentration of impurities (ppm unit) contained in the sintered body part before being used as a dispersion plate for plasma etching and the third
The concentration of impurities contained in the dispersion plate 4 that has been subjected to the grinding process is also described.
この表１から明らかなように、再生処理を施された分散
板はプラズマエツチングに使用される以前と、同等の純
度を有しており、プラズマエツチング用分散板として、
確実に再利用できることが判明した。As is clear from Table 1, the regenerated dispersion plate has the same purity as before being used for plasma etching, and can be used as a dispersion plate for plasma etching.
It turned out that it can definitely be reused.
ｌ上
以下余白
〔比較例〕
前記実施例と同様の分散仮に対する再生利用処理に際し
、超音波を用いることなく、各工程における洗浄処理等
を行い、使用前の分散板に含まれる不純物の濃度、第３
工程の研削までを施した分散板に含まれる不純物の濃度
及び、各工程を終了した分散板の不純物濃度を前記実施
例と同様の分析法により、測定した。その結果を表２に
示す。1 Upper and lower margins [Comparative example] When recycling the dispersion plate similar to the above example, cleaning treatment etc. in each step were performed without using ultrasound, and the concentration of impurities contained in the dispersion plate before use was reduced. Third
The concentration of impurities contained in the dispersion plate that had been subjected to the grinding process and the impurity concentration of the dispersion plate that had undergone each process were measured by the same analysis method as in the above example. The results are shown in Table 2.
この表２からは、研削後に不純物濃度が大幅に増加する
ことが分かる。又、比較のために超音波を印加しないで
再生処理を施した分散板では、使用前のもの及び表１に
示すように超音波を利用した再生処理を施したものに比
べて、すべての不純物元素において高い濃度を示してい
る。従って、各洗浄工程における超音波の利用について
の有効性を確認できる。From Table 2, it can be seen that the impurity concentration increases significantly after grinding. In addition, for comparison, the dispersion plate that was regenerated without the application of ultrasonic waves contained all impurities compared to the dispersion plate before use and the one that was regenerated using ultrasonic waves as shown in Table 1. It shows high concentration in elements. Therefore, the effectiveness of using ultrasonic waves in each cleaning process can be confirmed.
第１図
〔発明の効果〕
以上詳述したように、この廃明は電極成分が洗浄過程で
分散板に浸透した場合でも、それを容易かつ確実に除去
することができ、プラズマによって侵食された分散板を
確実に再利用することができるという優れた効果を発揮
する。Figure 1 [Effects of the Invention] As detailed above, even if the electrode components penetrate into the dispersion plate during the cleaning process, this can be easily and reliably removed, and the electrode components can be easily and reliably removed from being eroded by the plasma. The excellent effect of reliably reusing the dispersion plate is exhibited.
第１図はこの発明を具体化した分散板の再生処理方法を
°示す工程図、第２図はエツチング装置の概略断面図、
第３図は分散板の再生処理状況を示す説明図である。
４．８・・・分散板、５・・・電極、７・・・侵食部と
しての窪み。
第
図
第
図
一４Fig. 1 is a process diagram showing a method for recycling a dispersion plate embodying the present invention; Fig. 2 is a schematic cross-sectional view of an etching device;
FIG. 3 is an explanatory diagram showing the state of regeneration processing of the dispersion plate. 4.8... Dispersion plate, 5... Electrode, 7... Hollow as an eroded part. Figure 14
Claims (1)
るプラズマ分散板を、使用後に再生するプラズマ分散板
の再利用処理方法であって、プラズマによる侵食部を平
滑化する研削工程と、超音波振動を与えながら酸又はア
ルカリによって前記電極を溶解する洗浄工程とを、分散
板に付着した有機物の酸化処理工程に先立って遂行する
ようにしたプラズマ分散板の再利用処理方法。 ２前記電極はアルミニュウム電極であり、洗浄工程では
塩酸を使用する請求項１に記載のプラズマ分散板の再利
用処理方法。[Claims] 1. A plasma dispersion plate reuse treatment method for regenerating a plasma dispersion plate made of a silicon carbide sintered body and equipped with metal electrodes after use, the method comprising: smoothing areas eroded by plasma; A reuse process for a plasma dispersion plate in which a grinding process for dissolving the electrodes with acid or alkali while applying ultrasonic vibrations is performed prior to an oxidation process for organic matter adhering to the dispersion plate. Method. 2. The method for recycling a plasma dispersion plate according to claim 1, wherein the electrode is an aluminum electrode and hydrochloric acid is used in the cleaning step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63274057A JPH02119224A (en) | 1988-10-28 | 1988-10-28 | Treatment for reusing plasma dispersion plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63274057A JPH02119224A (en) | 1988-10-28 | 1988-10-28 | Treatment for reusing plasma dispersion plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02119224A true JPH02119224A (en) | 1990-05-07 |
Family
ID=17536366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63274057A Pending JPH02119224A (en) | 1988-10-28 | 1988-10-28 | Treatment for reusing plasma dispersion plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02119224A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007032418A1 (en) * | 2005-09-12 | 2007-03-22 | Matsushita Electric Industrial Co., Ltd. | Plasma treating apparatus and electrode member therefor and electrode member manufacturing and recycling method |
| US7578889B2 (en) | 2007-03-30 | 2009-08-25 | Lam Research Corporation | Methodology for cleaning of surface metal contamination from electrode assemblies |
| US8221552B2 (en) | 2007-03-30 | 2012-07-17 | Lam Research Corporation | Cleaning of bonded silicon electrodes |
-
1988
- 1988-10-28 JP JP63274057A patent/JPH02119224A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007032418A1 (en) * | 2005-09-12 | 2007-03-22 | Matsushita Electric Industrial Co., Ltd. | Plasma treating apparatus and electrode member therefor and electrode member manufacturing and recycling method |
| US7578889B2 (en) | 2007-03-30 | 2009-08-25 | Lam Research Corporation | Methodology for cleaning of surface metal contamination from electrode assemblies |
| US8221552B2 (en) | 2007-03-30 | 2012-07-17 | Lam Research Corporation | Cleaning of bonded silicon electrodes |
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