JPS603202A - High frequency impedance transformer - Google Patents
High frequency impedance transformerInfo
- Publication number
- JPS603202A JPS603202A JP58111254A JP11125483A JPS603202A JP S603202 A JPS603202 A JP S603202A JP 58111254 A JP58111254 A JP 58111254A JP 11125483 A JP11125483 A JP 11125483A JP S603202 A JPS603202 A JP S603202A
- Authority
- JP
- Japan
- Prior art keywords
- impedance
- dielectric constant
- substrate
- low
- transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
- H01P5/022—Transitions between lines of the same kind and shape, but with different dimensions
- H01P5/028—Transitions between lines of the same kind and shape, but with different dimensions between strip lines
Landscapes
- Waveguides (AREA)
Abstract
Description
【発明の詳細な説明】
産業−にの利用分野
本発明は電力増巾器等に利用される高周波インピーダン
ス変成器に関するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to a high frequency impedance transformer used in power amplifiers and the like.
従来の構成と問題点
ＵＨＦＨＦ上の高周波帯に用いる半導体素子は一般に低
インピーダンス素子が多く、特に電力増巾器用のトラン
ジスタの入出力インピーダンスは数Ω程度となっている
。通常高周波装置の入出力インピーダンスは６ｏΩある
いは７６Ωとなっているため、整合回路として、低イン
ピーダンスを高インピーダンスに変換するインピーダン
ス変成器が必要となる。この変成器は、周波数が低いと
集中定数で構成されるが、高周波になると寄生効果が大
きく使用できないため、マイクロストリップ線路を用い
た分巾定数回路で構成されることが多い。１ず最初にマ
イクロストリソゲ線路について簡単に触れる。Conventional Structure and Problems Semiconductor elements used in high frequency bands on UHFHF are generally low impedance elements, and in particular, the input/output impedance of transistors for power amplifiers is on the order of several ohms. Since the input/output impedance of a high frequency device is usually 60Ω or 76Ω, an impedance transformer is required as a matching circuit to convert low impedance to high impedance. This transformer is constructed with lumped constants at low frequencies, but parasitic effects are too great at high frequencies, so it is often constructed with a divided constant circuit using microstrip lines. 1. First, I will briefly touch on the microstrisogeomorphic line.
第１図ａにマイクロストリップ線路り構造を示す。Figure 1a shows the microstrip line structure.
誘電体基板１０１０片面全面に接地導体１０２を設け、
他の面に中心導体（ストリッグ導体）１０３を設けた構
造金とる。この線路の電気的特性は基板の誘電率ε、と
、導体幅Ｗと基板高さＨとの比Ｗ／Ｈ″′Ｃあられされ
る。第１図すはＷ／Ｈと特性インピーダンスＺＯの関係
を示すグラフである。A ground conductor 102 is provided on the entire surface of one side of the dielectric substrate 1010,
A structural metal with a center conductor (string conductor) 103 provided on the other side is used. The electrical characteristics of this line are determined by the dielectric constant ε of the substrate and the ratio W/H'''C of the conductor width W to the substrate height H. Figure 1 shows the relationship between W/H and characteristic impedance ZO. This is a graph showing.
ある特定のインピーダンスを実現するためには、ε１が
大きいほどＷ／Ｈは少くてよい。即ち基板高さＨが同一
ならば導体幅ｗｌ小さく設計できることを表わす。例え
ばＺ ｏ ＝ ５０９．Ｈ＝１．０■のときε、＝２．
０でＷ＝ ３．２ ｍｍ ＋ε ＝１６．○でＷ＝＝ｏ
、６咽となる。寸たＺＯ＝２０９とするとそれぞ２ｔＷ
＝１２箇、３＋ｎｍとなる。以上より比誘電率ε、が大
きいと線路中が小さく設計できる。また違った観点から
考えるとε、が大きいと低インピーダンス線路、ε、が
小さいと高インピーダンス線路が実現しやすいといえる
。In order to realize a certain specific impedance, the larger ε1 is, the smaller W/H is required. This means that if the substrate height H is the same, the conductor width wl can be designed to be smaller. For example, Z o = 509. When H=1.0■, ε,=2.
0 and W = 3.2 mm +ε = 16. ○W==o
, 6 throats. If ZO = 209, each is 2tW.
=12 points, 3+nm. From the above, if the dielectric constant ε is large, the inside of the line can be designed to be small. Considering from a different perspective, it can be said that a large ε makes it easy to realize a low impedance line, and a small ε makes it easy to realize a high impedance line.
ＣはＷ／Ｈと波長短縮率λ／λ０の関係を示す。C shows the relationship between W/H and wavelength shortening rate λ/λ0.
Ｗ／Ｈを犬さくするとλ／λ０も小さくなるが、この変
化は小さくε１による違いのほうがはるかに大きめ。５
０９線路の場合ε、＝２．○でλ／λ０＝０．７．εｒ
＝９．０で０．３となる。したがってε、が大きいほど
回路の小型化が期待できる。If W/H is reduced, λ/λ0 also becomes smaller, but this change is small and the difference due to ε1 is much larger. 5
In case of 09 line, ε,=2. With ○, λ/λ0=0.7. εr
=9.0 becomes 0.3. Therefore, the larger ε is, the more compact the circuit can be expected to be.
ところで、マイクロストリップ線路で低インピーダンス
の変成器を構成する場合、回路も低インピーダンス線路
で実現したほうが設計しやすいし前述の理由で小型化も
実現しやすいために高誘電率基板がしばしば用いられて
いた。しかし高誘電率基板のみでは変成器の変成比（イ
ンピーダンス比）を大きくとれないこと、出力側に必要
となる５０Ω線路は線路幅が狭すぎて導体損失の増大を
伴うこと、広帯域設計が困難なこと、さらには集中定数
素子の実現が困難であることなどの欠点を有していた。By the way, when constructing a low-impedance transformer using a microstrip line, a high-permittivity substrate is often used because it is easier to design the circuit using a low-impedance line, and it is also easier to downsize for the reasons mentioned above. Ta. However, it is difficult to obtain a large transformation ratio (impedance ratio) of the transformer using only a high dielectric constant substrate, the 50Ω line required on the output side is too narrow and increases conductor loss, and broadband design is difficult. Furthermore, it has drawbacks such as difficulty in realizing a lumped constant element.
発明の目的
本発明の目的は、変成比が大きくとれ広帯域でしかも回
路損失が小さく、かつ集中定数回路を組込むことの可能
な、１ｏ、Ｑ以下の低インピーダンス素子を５００ある
いはそれ以上の高インピーダンスに変換するためのイン
ピーダンス変成器を提供することにある。Purpose of the Invention The purpose of the present invention is to convert a low impedance element of 1o, Q or less into a high impedance of 500 or more, which has a large transformation ratio, a wide band, and low circuit loss, and can incorporate a lumped constant circuit. An object of the present invention is to provide an impedance transformer for converting impedance.
発明の構成
本発明は上記目的を達成するもので、誘電率の異なる複
数個の誘電体基板を接続し、前記誘電体基板上にマイク
ロストリソゲ線路よシなる回路が設けられており、前記
回路の一方が低インピーダンス端子に他方が高インピー
ダンス端子に接続される構成を有し、前記複数個の誘電
体基板の誘電率を、低・インピーダンス端子側を最も高
くシ、高インピーダンス端子イ１】すに向かって順次低
くしたこと全特徴とする高周波インピーダンス変成器を
枡供するものである。Structure of the Invention The present invention achieves the above object, and includes a plurality of dielectric substrates having different dielectric constants connected to each other, a circuit called a microstrige line formed on the dielectric substrate, and a circuit called a microstrisogen line. One of the dielectric substrates is connected to a low impedance terminal and the other to a high impedance terminal, and the dielectric constant of the plurality of dielectric substrates is set such that the low impedance terminal side is the highest and the high impedance terminal The present invention provides a high frequency impedance transformer which is characterized by a progressively lower impedance.
図において、２０１は低インピーダンス素子、２０２は
、アルミナ・セラミック等の高誘電率基板、２０３はエ
ポキシ・ガラス、テフロン・ガラス等の積層板、あるい
は石英等の低誘電率基板、２０４ｔｊ：コネクタ、２０
５は高誘電率基板２０２上に形成さγシタ分布定数によ
る変成器のパターン、同じく２０６も低誘電率基板２０
３上に形成された変成器のパターンを示す。In the figure, 201 is a low impedance element, 202 is a high dielectric constant substrate such as alumina ceramic, 203 is a laminated board such as epoxy glass or Teflon glass, or a low dielectric constant substrate such as quartz, 204tj: connector, 20
5 is a transformer pattern formed on a high dielectric constant substrate 202 and has a γ-shita distribution constant, and 206 is also a low dielectric constant substrate 20.
3 shows the transformer pattern formed on FIG.
い寸、低インピーダンス素子２０１の入力インピーダン
スをＺＬ、コネクタ２０４イ則からみｆｔインピーダン
スをＺＨとする。高誘電率基板２０２上実現し、低誘電
率基板２０３てはｒからＺＨへ変換する回路すなわち変
成比ｚＨ／ζτ５蛋＝ｐ ６恕鵡汁を構成するようにす
ると広帯域な設計も容易で、かつ高誘電率基板２０２で
は低インピーダンス線路、低誘電率基板２０３では高イ
ンピーダンス線路を用いて回路を実現することが可能で
基板の特性全有効に利用できる。廿た線路中を広く設計
できるため導体損失の低減も可能となる。Assume that the input impedance of the low impedance element 201 is ZL, and the ft impedance of the connector 204 is ZH based on the A rule. If it is implemented on the high dielectric constant substrate 202 and the low dielectric constant substrate 203 is used to configure the circuit for converting r to ZH, that is, the metamorphic ratio zH/ζτ5 protein=p6, it is easy to design a wide band. It is possible to realize a circuit using a low impedance line on the high dielectric constant substrate 202 and a high impedance line on the low dielectric constant substrate 203, so that all the characteristics of the substrate can be effectively utilized. It is also possible to reduce conductor loss because it is possible to design a wide area in a long line.
ＺＬが１０Ω以下、ｚＨが６００あるいはそｎ以上とす
る変成器においては、高誘電率基板の比誘電率が９以上
、低誘電率基板の比誘電率を４以下とするが実用上好捷
しい。In a transformer in which ZL is 10 Ω or less and zH is 600 or more, it is practically preferable that the dielectric constant of the high dielectric constant substrate be 9 or more and the dielectric constant of the low dielectric constant substrate be 4 or less. .
この例では説明の便宜上二種類の誘電体基板を用いた場
合を示したが、種類は二種以上であれは良い。Although this example shows a case where two types of dielectric substrates are used for convenience of explanation, two or more types may be used.
第３図に本発明をトランジスタを用いた高周波電力増１
］器に応用した例を示す。大電力トランジスタの入出力
インピーダンスは通常きわめて低く５９程度以下になる
ことが多い。このため入出力整合回路に本発明の変成器
を適用できる。図において３Ｃ１ｊは高誘電率基板３０
２，３０３は低誘電率基板、百〇４，３０５は入力およ
び出力コネクタ、３０６１ｄ、 ＴＫ電力用トランジス
タ３０７．３０８Ｕ ＋−ランジスタに直流を加えるた
めの集中定数によるバイアス回路を示す。Figure 3 shows high frequency power increase using transistors according to the present invention.
] An example of application to a container is shown. The input/output impedance of high power transistors is usually very low, often about 59 or less. Therefore, the transformer of the present invention can be applied to an input/output matching circuit. In the figure, 3C1j is a high dielectric constant substrate 30
2,303 is a low dielectric constant substrate, 1004,305 is an input and output connector, 3061d, TK power transistor 307.308U +- A bias circuit using a lumped constant for applying direct current to the transistor.
この例では、トランジスタの入出力の低インピーダンス
部を高誘電率基板３０１上でインピーダンスを上げる回
路全実現したのち、低誘電率基板３０２．３０３で５ｏ
Ωに整合する回路を付加するとともに、高誘電率基板３
０１上で構成しにくいバイアス回路等の集中定数回路を
も組込むことか可能となる。一般に高誘電率基板はアル
ミナセラミック等の焼結体を用いることが多く、値段も
高いため、本発明の如く高誘電率の要求される部分にの
み使用し、他の部分はコスト的に安い低誘電率の積層板
の基板を用いることにより、装置全体の低廉化全実現で
きる。In this example, after realizing the entire circuit that increases the impedance of the input/output low impedance portion of the transistor on the high dielectric constant substrate 301, the low dielectric constant substrates 302 and 303 are used to increase the impedance.
In addition to adding a circuit matching Ω, high dielectric constant substrate 3
It is also possible to incorporate lumped constant circuits such as bias circuits that are difficult to configure on the 01. In general, high dielectric constant substrates often use sintered bodies such as alumina ceramics, and are expensive, so they are used only in areas where high dielectric constant is required, such as in the present invention, and other parts are By using a dielectric constant laminate substrate, the entire device can be made at a lower cost.
第４図は本発明の他の実椎例で、多段の４分の一波長変
成器である。４０１は低インピーダンス側の出力端子、
４０２は高インピーダンス側の出力端であり、４０３〜
４０６は誘電率の異なる厚が設けられそのインピーダン
スヲ２１〜Ｚ４とする。FIG. 4 shows another practical example of the present invention, which is a multi-stage quarter wavelength transformer. 401 is the output terminal on the low impedance side,
402 is the output terminal on the high impedance side, and 403 to
406 is provided with a thickness having a different dielectric constant, and its impedance is set to 21 to Z4.
いまε１〉ε２〉ε３〉ε４とする。基板の長さを４分
の一波長に選び基板４０３〜４０６上における長さをａ
１〜Ｑ４とするとＱｌ〈Ｑ２〈Ｑ３〈Ｑ、４とナル。Now let ε1〉ε2〉ε3〉ε4. The length of the substrate is selected to be a quarter wavelength, and the length on the substrates 403 to 406 is a.
If 1 to Q4, then Ql〈Q2〈Q3〈Q, 4 and null.
また線路ｄ］をほぼ等しく選ぶとＺｌ〈Ｚ２＜Ｚ３＜Ｚ
、４となる。ところで端子４０１に負荷インピーダンス
ＺＬをつないだ場合端子４０２からみたインピーダンス
Ｚｉは、
となる。基本比誘電率はε１〉ε２〉ε３〉ε４であり
、線路巾がほぼ等しくかつ基板厚さも同一であるとスル
とＺｌ〈Ｚ２〈Ｚ３〈Ｚ４で、Ｚ２／Ｚ１〉１．Ｚ４／
ｚ３〉１が成立するから
Ｚｌ）ＺＬ
となり大きなインピーダンス変成器が得られる。Moreover, if the lines d] are selected almost equally, Zl〈Z2＜Z3＜Z
, becomes 4. By the way, when a load impedance ZL is connected to the terminal 401, the impedance Zi seen from the terminal 402 is as follows. The basic dielectric constant is ε1>ε2>ε3>ε4, and if the line widths are approximately equal and the substrate thicknesses are also the same, Zl<Z2<Z3<Z4, and Z2/Z1>1. Z4/
Since z3>1 holds true, Zl)ZL, and a large impedance transformer is obtained.
丑た４分−波長型であるからきわめて広帯域でかつ、線
路巾をほぼ一定にできるから、電流分布が一様で電力を
扱うデバイスに用いると熱設計がきわめて容易となる。Since it is a quarter-wavelength type, it has an extremely wide band and the line width can be made almost constant, so the current distribution is uniform and thermal design is extremely easy when used in a device that handles electric power.
なお以上の説明では線路巾を一定としたが、さらに大き
な変成比が必要な場合は線路１１〕ヲ適宜かえ扛はよい
。また基板の数も４枚の例をとりあげたが、２枚以上で
あれば枚数には制限はない。In the above explanation, the width of the line is constant, but if a larger transformation ratio is required, the width of the line 11 may be changed as appropriate. Further, although an example of four substrates has been taken up, there is no limit to the number as long as it is two or more.
発明の効果
以上のように本発明は、誘電率の異なる複数個の誘電体
基板を接続し、前記誘電体基板上にマイクロストリップ
線路よりなる回路が設けられており、前記回路の一方が
低インピーダンス端子に他方が高インピーダンス端子に
接続さ肚る構成を有し、前記少数個の誘電体基板の誘電
率を、低インピーダンス端子（ｔｉｌｌ ’を最も高く
シ、高インピーダンス端子側に向かって順次低くしたこ
とを特徴とする高周波インピーダンス変成器を提供する
ものでインピーダンス変成比が大きく、かつ広帯域、低
損失の変成器あるいは組合回路が構成可能となり高周波
電力増幅器の安定化、広帯域化、低コスト −化が実現
できその工業的価値は極めて太きい。Effects of the Invention As described above, the present invention connects a plurality of dielectric substrates having different dielectric constants, a circuit made of a microstrip line is provided on the dielectric substrate, and one of the circuits has a low impedance. The terminal has a configuration in which the other terminal is connected to a high impedance terminal, and the dielectric constant of the small number of dielectric substrates is set to be highest at the low impedance terminal (till') and gradually lowered toward the high impedance terminal. This provides a high-frequency impedance transformer that has the following characteristics: it has a large impedance transformation ratio, and it is possible to configure a wide-band, low-loss transformer or combination circuit, making high-frequency power amplifiers more stable, wide-band, and low-cost. This can be realized and its industrial value is extremely large.
第１図ａはマイクロストリップ線路の断面図、第１図す
、ｃばその特性を説明する図、第２図は本発明の一実施
例である高周波インピーダンス変成器の平面図、第３図
は本発明の応用例である高周波電力増幅器の平面図、第
４図は本発明の他の実施例である多段四分の一波長変成
器の平面図である。
２０１・・・・・・低インピーダンス素子、２０２・・
・・・・高誘電率基板、２Ｑ３・・・・・低誘電率基板
、３０１・・・・・・高誘電率基板、３０２．３０３・
・・・・低誘電率基板、３０６・・・・・・電力用トラ
ンジスタ、３０７゜３０８・・・・・直流バイアス回路
。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
Ｗん
駿
第３図Fig. 1a is a cross-sectional view of a microstrip line, Figs. FIG. 4 is a plan view of a high frequency power amplifier which is an application example of the present invention, and FIG. 4 is a plan view of a multi-stage quarter wavelength transformer which is another embodiment of the present invention. 201...Low impedance element, 202...
...High dielectric constant substrate, 2Q3...Low dielectric constant substrate, 301...High dielectric constant substrate, 302.303.
...Low dielectric constant substrate, 306...Power transistor, 307°308...DC bias circuit. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3
Claims (2)
誘電体基板上にマイクロストリップ線路よりなる回路が
設けら汎ており、前記回路の一方が低インピーダンス端
子に、他方が高インピーダンス端子に接続され、前記複
数個の誘電体基板の誘電率を、低インピーダンス端子側
を最も高クシ、高インピーダンス端子側に向かって順次
低りシタことを特徴とする高周波インピーダンス変成器
。(1) A plurality of dielectric substrates having different dielectric constants are all connected, and a circuit consisting of a microstrip line is provided on the dielectric substrate, one of the circuits serving as a low impedance terminal and the other as a high impedance terminal. The high frequency impedance transformer is connected to a high frequency impedance transformer, wherein the dielectric constants of the plurality of dielectric substrates are highest on the low impedance terminal side and gradually decrease toward the high impedance terminal side.
アス供給回路等の回ｉを集中定数回路で形成したことを
特徴とする特許請求の範囲第１項記載の高周波インピー
ダンス変成器。(2) The high frequency impedance transformer according to claim 1, wherein the circuit i such as a bias supply circuit is formed by a lumped constant circuit on the dielectric substrate on the impedance terminal side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58111254A JPS603202A (en) | 1983-06-20 | 1983-06-20 | High frequency impedance transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58111254A JPS603202A (en) | 1983-06-20 | 1983-06-20 | High frequency impedance transformer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS603202A true JPS603202A (en) | 1985-01-09 |
Family
ID=14556518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58111254A Pending JPS603202A (en) | 1983-06-20 | 1983-06-20 | High frequency impedance transformer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS603202A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62114525U (en) * | 1986-01-08 | 1987-07-21 | ||
| JPS62154501U (en) * | 1986-03-24 | 1987-10-01 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5439551A (en) * | 1977-09-02 | 1979-03-27 | Nec Corp | Matching circuit of microwave transistor |
| JPS5757014A (en) * | 1980-09-24 | 1982-04-06 | Nec Corp | Superwide-band high output transistor amplifier |
-
1983
- 1983-06-20 JP JP58111254A patent/JPS603202A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5439551A (en) * | 1977-09-02 | 1979-03-27 | Nec Corp | Matching circuit of microwave transistor |
| JPS5757014A (en) * | 1980-09-24 | 1982-04-06 | Nec Corp | Superwide-band high output transistor amplifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62114525U (en) * | 1986-01-08 | 1987-07-21 | ||
| JPS62154501U (en) * | 1986-03-24 | 1987-10-01 |
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