JPH0369119A - Batch dry etching apparatus - Google Patents

Batch dry etching apparatus

Info

Publication number
JPH0369119A
JPH0369119A JP20621389A JP20621389A JPH0369119A JP H0369119 A JPH0369119 A JP H0369119A JP 20621389 A JP20621389 A JP 20621389A JP 20621389 A JP20621389 A JP 20621389A JP H0369119 A JPH0369119 A JP H0369119A
Authority
JP
Japan
Prior art keywords
wafers
dry etching
part electrode
stages
turned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20621389A
Other languages
Japanese (ja)
Inventor
Yasuki Nakao
中尾　泰樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamaguchi Ltd
Original Assignee
NEC Yamaguchi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamaguchi Ltd filed Critical NEC Yamaguchi Ltd
Priority to JP20621389A priority Critical patent/JPH0369119A/en
Publication of JPH0369119A publication Critical patent/JPH0369119A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance the uniformity of etching rate between wafers and inside one wafer by a method wherein a lower-part electrode is turned around its central axis and stages are rotated and revolved. CONSTITUTION:In a batch-system dry etching apparatus, wafers are arranged on stages 2 installed at equal angles from the center of a lower-part electrode 1 and they are etched simultaneously. In this apparatus, the lower-part electrode 1 is turned around its central axis and the stages 2 are rotated and revolved. For example, a lower-part electrode 1 is turned by using a motor 5. A fixed gear 3 is mated with gears 4 for stage rotation use; stages 2 are turned when the lower-part electrode 1 is turned. By using such a planetary gear mechanism, wafers are rotated and revolved. Thereby, etching rate between individual wafers is made uniform and, in addition, etching rate at individual points inside a wafer can be made uniform.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造装置のドライエツチング装置に関し
、特にバッチ式ドライエツチング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dry etching apparatus for semiconductor manufacturing equipment, and particularly to a batch type dry etching apparatus.

〔従来の技術〕[Conventional technology]

従来、この種のドライエツチング装置には、第３図（ａ
）、（ｂ）の上面図及びその断面図に示すように、平行
平板電極の下部電極１上に、その中心から等角度に複数
のステージ２を設け、ウェハースを何枚か並べて同時に
エツチングを行なうバッチ方式のものがある。Conventionally, this type of dry etching apparatus has a
), (b) As shown in the top view and its cross-sectional view, a plurality of stages 2 are provided on the lower electrode 1, which is a parallel plate electrode, at equal angles from the center, and several wafers are lined up and etched at the same time. There is a batch method.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のバッチ式ドライエツチング装置では、半
導体の高集積度化によるエツチングパターンの微細化、
及びウェハースの大口径化に伴い、ウェハース間及びウ
ェハース内のエツチング速度の均一性が悪くなるという
欠点がある。The conventional batch-type dry etching equipment described above is capable of finer etching patterns due to higher integration of semiconductors.
Another disadvantage is that as the diameter of the wafer becomes larger, the uniformity of the etching rate between and within the wafer becomes worse.

上述した従来のバッチ式ドライエツチング装置に対し、
本発明は、下部電極を回転させ、さらにウェハースを載
せたステージを回転させることにより、ウェハース間及
びウェハース内のエツチング速度の均一性を向上させる
ようにしたものである。In contrast to the conventional batch dry etching equipment mentioned above,
The present invention improves the uniformity of etching rates between and within wafers by rotating the lower electrode and further rotating the stage on which the wafers are placed.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のバッチ式ドライエツチング装置は、ウェハース
間のエツチング速度の均一性を向上させるための下部電
極回転機構と、ウェハース内のエツチング速度の均一性
を向上させるためのステージ回転機構とを有している。The batch dry etching apparatus of the present invention has a lower electrode rotation mechanism for improving the uniformity of etching speed between wafers, and a stage rotation mechanism for improving the uniformity of etching speed within the wafer. There is.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。第１図
は本発明の第１の実施例の縦断面図である。下部電極１
がモーター５によって回転する。固定ギア３とステージ
回転用ギア４がかみ合っており、下部電極１の回転に伴
いステージ２が回転する。このプラネタリ−ギア機構に
より、ウェハースは自転及び公転を行なう。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of a first embodiment of the invention. Lower electrode 1
is rotated by motor 5. A fixed gear 3 and a stage rotation gear 4 are engaged with each other, and the stage 2 rotates as the lower electrode 1 rotates. This planetary gear mechanism causes the wafer to rotate and revolve.

第２図は本発明の第２の実施例の縦断面図である。下部
電極１がモーター５によって回転する。FIG. 2 is a longitudinal sectional view of a second embodiment of the invention. The lower electrode 1 is rotated by a motor 5.

ステージ回転用ギア４が処理室外壁６の内側に設けられ
たインターナルギアとかみ有っており、下部型８ｉ！１
の回転に伴いステージ２が回転する。The stage rotation gear 4 is engaged with an internal gear provided inside the processing chamber outer wall 6, and the lower mold 8i! 1
The stage 2 rotates as the stage 2 rotates.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、ウェハースの乗った下部
電極をエツチング中に回転させることにより、各ウェハ
ース間のエツチング速度を均一にし、さらに、下部電極
の回転と連動してステージを回転させ、ウェハース自身
も回転させることにより、ウェハース内の各点のエツチ
ング速度も均一にできるという効果がある。As explained above, the present invention rotates the lower electrode on which the wafer is mounted during etching to make the etching speed uniform between each wafer, and furthermore, rotates the stage in conjunction with the rotation of the lower electrode to remove the wafer. By rotating itself, the etching speed at each point within the wafer can be made uniform.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の第１の実施例の構成図、第２図は本発
明の第２の実施例の構成図、第３図（ａ）、（ｂ）は従
来のバッチ式ドライエツチング装置の上面図と断面図を
示したものである。 １・・・下部電極、２・・・ステージ、３・・・固定ギ
ア、４・・・ステージ回転用ギア、５・・・モーター　
６・・・処理室外壁。Fig. 1 is a block diagram of a first embodiment of the present invention, Fig. 2 is a block diagram of a second embodiment of the present invention, and Figs. 3 (a) and (b) are a conventional batch type dry etching apparatus. A top view and a sectional view are shown. 1... Lower electrode, 2... Stage, 3... Fixed gear, 4... Stage rotation gear, 5... Motor
6... Processing room outer wall.

Claims (1)

【特許請求の範囲】[Claims] 下部電極上にその中心から等角度に設置されたステージ
にウェハースを並べ、同時にエッチングを行なうバッチ
式ドライエッチング装置において、前記下部電極を前記
中心軸まわりに回転させて前記ステージを自転及び公転
させることを特徴とするバッチ式ドライエッチング装置
。In a batch type dry etching apparatus in which wafers are arranged on a stage set on a lower electrode at equal angles from the center and etched simultaneously, the stage is rotated and revolved by rotating the lower electrode around the central axis. Batch type dry etching equipment featuring:
JP20621389A 1989-08-08 1989-08-08 Batch dry etching apparatus Pending JPH0369119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20621389A JPH0369119A (en) 1989-08-08 1989-08-08 Batch dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20621389A JPH0369119A (en) 1989-08-08 1989-08-08 Batch dry etching apparatus

Publications (1)

Publication Number Publication Date
JPH0369119A true JPH0369119A (en) 1991-03-25

Family

ID=16519642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20621389A Pending JPH0369119A (en) 1989-08-08 1989-08-08 Batch dry etching apparatus

Country Status (1)

Country Link
JP (1) JPH0369119A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6837940B2 (en) * 2000-12-07 2005-01-04 E.E. Technologies Inc. Film-forming device with a substrate rotating mechanism
JP2009151116A (en) * 2007-12-20 2009-07-09 Asuko:Kk Backlight of internal irradiation type indicating lamp and internal irradiation type indicating lamp
WO2011156371A1 (en) * 2010-06-07 2011-12-15 Veeco Instruments, Inc. Multi-wafer rotating disc reactor with inertial planetary drive

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6837940B2 (en) * 2000-12-07 2005-01-04 E.E. Technologies Inc. Film-forming device with a substrate rotating mechanism
JP2009151116A (en) * 2007-12-20 2009-07-09 Asuko:Kk Backlight of internal irradiation type indicating lamp and internal irradiation type indicating lamp
WO2011156371A1 (en) * 2010-06-07 2011-12-15 Veeco Instruments, Inc. Multi-wafer rotating disc reactor with inertial planetary drive
US9230846B2 (en) 2010-06-07 2016-01-05 Veeco Instruments, Inc. Multi-wafer rotating disc reactor with inertial planetary drive

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