JPH04102313A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To eliminate an irregularity in a film thickness inside the face of a wafer by a method wherein a rotary jig which comes into contact with the wafer and which turns the wafer is installed at a fork by means of which the wafer is put into and taken out from a core tube. CONSTITUTION:A fork 2 is installed at the inside of a core tube 1; a wafer 3 is placed on the fork 2; the wafer 3 is brought into contact with a rod-shaped rotary jig 5 installed at the fork 2; the rotary jig 5 is turned by using a motor 6 for rotary drive use; the wafer 3 is turned; and a vapor growth operation is executed. When the wafer is turned in this manner, a gas for film growth use comes uniformly into contact with the wafer and an irregularity in a film thickness inside the face of the wafer is eliminated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体製造装置に関し、特に気相成長に用いる
ＬＰＧＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to semiconductor manufacturing equipment, and particularly to LPGVD equipment used for vapor phase growth.

〔従来の技術〕[Conventional technology]

従来、この種の半導体製造装置、特にＬＰＧＶＤ装置は
、ボートにウェハーを立てて炉芯管に入れ、炉芯管の一
端から他端に向けて膜成長用ガスを流し、気相成長を行
なうようになっていた。Conventionally, in this type of semiconductor manufacturing equipment, especially LPGVD equipment, wafers are placed on a boat, placed in a furnace core tube, and film growth gas is flowed from one end of the furnace core tube to the other to perform vapor phase growth. It had become.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体製造装置は、横型炉芯管を使用し
、斜め渭ボートにウェハーを立てて気相成長するので、
膜成長用ガスがウェハーに均一に接触せず、ウェハー面
内で膜厚のばらつきが発生し、その結果製品の歩留りが
著しく低下するという問題点があった。The conventional semiconductor manufacturing equipment described above uses a horizontal furnace core tube, and the wafer is placed on a diagonal boat for vapor phase growth.
There is a problem in that the film growth gas does not come into uniform contact with the wafer, resulting in variations in film thickness within the wafer surface, resulting in a significant decrease in product yield.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体製造装置は、炉芯管内でウェハーを回転
させることにより、膜成長用ガスをウェハーに均一に接
触させて膜成長することで、ウェハー面内の膜厚ばらつ
きをなくすことを目的とし、ウェハーを炉芯管に出し入
れするためのフォークに、ウェハーと接触してウェハー
を回転させる回転治具を設けている。The semiconductor manufacturing apparatus of the present invention aims to eliminate variations in film thickness within the wafer surface by rotating the wafer in a furnace core tube to uniformly contact the film growth gas to the wafer and growing the film. A rotating jig that contacts the wafer and rotates the wafer is provided on the fork for loading and unloading the wafer into the furnace core tube.

〔実施例〕〔Example〕

次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の実施例１の正面断面図、第２図はその
側面断面図である。炉芯管１の内部に、フオーク２を設
置し、フォーク２にウェハー３をのせ、フォーク２に設
けられた棒状の回転治具５にウェハー３を接触させ、回
転駆動用モーター６により回転治具５を回転させてウェ
ハー３を回転させ、気相成長を行なう。このように、ウ
ェハーを回転させることにより、膜成長用ガスがウェハ
ーに均一に接触し、ウェハー面内の膜厚のばらつきがな
くなる。FIG. 1 is a front sectional view of Embodiment 1 of the present invention, and FIG. 2 is a side sectional view thereof. A fork 2 is installed inside the furnace core tube 1, a wafer 3 is placed on the fork 2, the wafer 3 is brought into contact with a rod-shaped rotating jig 5 provided on the fork 2, and the rotating jig is rotated by a rotation drive motor 6. 5 is rotated to rotate the wafer 3, and vapor phase growth is performed. By rotating the wafer in this way, the film growth gas comes into uniform contact with the wafer, eliminating variations in film thickness within the wafer surface.

第３図は第２図の回転部の拡大図を示しており、ウェハ
ー又はウェハーを収納したカセットを、回転治具５の上
にのせて炉芯管１に出し入れするフォーク２に回転駆動
用モーター６を設置した場合を示す。FIG. 3 shows an enlarged view of the rotating part shown in FIG. 2, in which a wafer or a cassette containing wafers is placed on a rotating jig 5, and a fork 2 that takes it in and out of the furnace core tube 1 is connected to a rotary drive motor. 6 is installed.

また、第４図は本発明の実施例２の部分斜視図て゛、蓋
４にフォーク２を固定し、このフォーク２にボートをの
せ、ウェハー３を蓋４を貫通する回転治具５に接触させ
、ウェハー回転駆動用モーター６からの動力で回転治具
５を回転させながら気相成長するものである。こうする
とボートが直接炉芯管に触れることがなく出し入れ可能
であり、しかもウェハーを回転させながら成長させる為
、ごみ低減に大きな効果があり、ウェハー内の膜厚も均
一に成長できるという利点を有する。FIG. 4 is a partial perspective view of a second embodiment of the present invention, in which a fork 2 is fixed to a lid 4, a boat is placed on this fork 2, and a wafer 3 is brought into contact with a rotating jig 5 passing through the lid 4. , vapor phase growth is performed while rotating the rotating jig 5 with power from the wafer rotation drive motor 6. In this way, the boat can be taken in and out without directly touching the furnace core tube, and since the wafer is grown while rotating, it has a great effect on reducing waste, and has the advantage that the film thickness within the wafer can also be grown uniformly. .

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、炉芯管内でウェハーを回
転させることによって膜成長用ガスがウェハーに均一に
接触し、その結果ウェハー面内の膜厚ばらつきをなくす
ことができる。As explained above, in the present invention, by rotating the wafer within the furnace core tube, the film growth gas comes into uniform contact with the wafer, and as a result, it is possible to eliminate variations in film thickness within the wafer surface.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の実施例１の正面断面図、第２図は第１
図の側面断面図、第３図は第２図の回転部の拡大図、第
４図は本発明の実施例２の部分斜視図である。1 is a front sectional view of Embodiment 1 of the present invention, and FIG. 2 is a sectional view of Embodiment 1 of the present invention.
FIG. 3 is an enlarged view of the rotating part of FIG. 2, and FIG. 4 is a partial perspective view of Embodiment 2 of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 横型炉芯管にウェハーを立てて挿入し気相成長を行なう
半導体製造装置において、ウェハーを炉芯管に出し入れ
するためのフォークに、ウェハーと接触してウェハーを
回転させる回転治具を設けたことを特徴とする半導体製
造装置。In semiconductor manufacturing equipment that performs vapor phase growth by inserting wafers vertically into a horizontal furnace core tube, a rotating jig is provided on the fork for loading and unloading the wafers into the furnace core tube, which contacts the wafers and rotates the wafers. A semiconductor manufacturing device characterized by: