JPS60238476A - Vacuum vapor deposition device - Google Patents
Vacuum vapor deposition deviceInfo
- Publication number
- JPS60238476A JPS60238476A JP9113785A JP9113785A JPS60238476A JP S60238476 A JPS60238476 A JP S60238476A JP 9113785 A JP9113785 A JP 9113785A JP 9113785 A JP9113785 A JP 9113785A JP S60238476 A JPS60238476 A JP S60238476A
- Authority
- JP
- Japan
- Prior art keywords
- trap
- vacuum
- cover
- vapor deposition
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、試料に薄膜を蒸着させる蒸発源近傍にトラッ
プを配置した真空蒸着装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an improvement in a vacuum evaporation apparatus in which a trap is disposed near an evaporation source for depositing a thin film onto a sample.
７：し膜作成り段の１つに真空蒸着法があり、これは薄
膜化すべき物質を真空中で加熱蒸発し、試料に付着させ
薄膜を形成するものである。しかし、真空中で蒸着を行
なう場合、残留ガスが不純物として薄膜中に混入し、高
純度の薄膜を得ることば半導体に用いる薄膜には高純度
のものを要求される場合が多く、このためには残留ガス
が混入しないように、高真空中で蒸着を行なうことが必
要である。7: One of the methods for forming a thin film is the vacuum evaporation method, in which a substance to be formed into a thin film is heated and evaporated in a vacuum, and then adhered to a sample to form a thin film. However, when vapor deposition is performed in a vacuum, residual gas mixes into the thin film as impurities, and in order to obtain a highly pure thin film, thin films used for semiconductors are often required to be of high purity. It is necessary to carry out the deposition in a high vacuum to avoid contamination with residual gases.
また真空蒸着装置では、薄膜材料が試料以外の真空槽の
内壁に付着する、いわゆる汚れの問題がある。すなわち
薄膜材料の種類によっては、真空排気時に真空槽の内壁
に付着した薄膜材料からガスが放出され、蒸着装置を長
期間使用し汚れが多くなるにつれて放出するガス量も増
加し、真空槽の到達しうる真空度が低下する。この真空
槽内壁の汚れ防止手段として、試料以外に付着しようと
する薄膜材料を積極的にトラップに付着させることが行
なわれる。Furthermore, in vacuum evaporation apparatuses, there is a problem of so-called contamination, in which the thin film material adheres to the inner wall of the vacuum chamber other than the sample. In other words, depending on the type of thin film material, gas is released from the thin film material attached to the inner wall of the vacuum chamber during evacuation, and as the evaporation equipment is used for a long time and becomes contaminated, the amount of gas released increases, causing The degree of vacuum available decreases. As a means to prevent contamination of the inner wall of the vacuum chamber, thin film materials other than the sample that are likely to adhere are actively adhered to the trap.
この種の従来の装置を第１図に示す。ここで、真空槽ｌ
の内部に試料２と蒸発源３が配置され、蒸発源３の中に
薄膜材料４が入っている。蒸発源３には薄膜材料４を加
熱蒸発させるためにヒータ５が設けられ、真空槽ｌに取
付けた電流導入用の纏−７−６シＩＩ−に珀しヂ「番１
蛇繍七ｈイいス −士蒸発源３の上方には、中央に開口
を設けて蒸発源３を覆う構造のトラップ７が配置され、
このトラップ７は真空槽内の高真空を維持し蒸発した薄
膜材本・１４の刺着効果をより高めるために、液体窒素
等の冷却剤を外部から流入し表面温度を低く保つ構造と
なっている。また、真空槽１は真空排気系８で真空排気
される。A conventional device of this type is shown in FIG. Here, vacuum tank l
A sample 2 and an evaporation source 3 are arranged inside the evaporation source 3, and a thin film material 4 is contained in the evaporation source 3. The evaporation source 3 is provided with a heater 5 for heating and evaporating the thin film material 4, and a heater 5 is installed in the evaporation source 3 to heat and evaporate the thin film material 4.
A trap 7 having an opening in the center and covering the evaporation source 3 is arranged above the evaporation source 3.
This trap 7 has a structure in which a coolant such as liquid nitrogen is flowed in from the outside to maintain a low surface temperature in order to maintain a high vacuum in the vacuum chamber and further enhance the sticking effect of the evaporated thin film material 14. There is. Further, the vacuum chamber 1 is evacuated by an evacuation system 8.
この場合、試料２に蒸着する以外のほとんどの薄膜材料
４がトラップ７にのみ付着する構造となっている。よっ
て、トラップ７の壁面が薄膜材料４によって汚損され、
その放出ガスにより真空槽１の到達真空度が低下した場
合には、定期的にトラップ７を真空槽の外部にとりだし
て汚れを取り除く洗浄作業を行ない、再び真空槽内に取
付けて常に真空槽を高真空に保って真空蒸着を行なう。In this case, the structure is such that most of the thin film material 4 other than that deposited on the sample 2 is attached only to the trap 7. Therefore, the wall surface of the trap 7 is contaminated by the thin film material 4,
If the ultimate vacuum level of the vacuum chamber 1 decreases due to the released gas, the trap 7 should be periodically taken out of the vacuum chamber and cleaned to remove dirt, and then reinstalled inside the vacuum chamber to ensure that the vacuum chamber is constantly maintained. Vacuum deposition is performed while maintaining a high vacuum.
このように、従来の装置では真空度を高く保つには上記
の洗浄作業を度々行なう必要があり、このため次のよう
な欠点があった。As described above, in order to maintain a high degree of vacuum in the conventional apparatus, it is necessary to perform the above-mentioned cleaning operation frequently, and this has resulted in the following drawbacks.
（１）洗浄時に、トラップを真空槽外に出し汚れを落す
必要がある。またこれに伴い、
（２）酸液等を用いた化学反応による洗浄を行なうため
トラップ表面が溶解し、極端な場合には穴があき、リー
ク発生の原因ともなる。(1) When cleaning, it is necessary to take the trap out of the vacuum chamber to remove dirt. Additionally, due to this, (2) the surface of the trap is dissolved due to cleaning by chemical reaction using acid solution, etc., and in extreme cases, holes may form, causing leakage.
（３）ｌ−ラップを洗浄後、再び真空槽に収めたとき空
気および冷却剤が真空槽中にリークするおそれがないよ
うに、配管部分を十分チェックする必要がある。(3) After cleaning the L-wrap, it is necessary to thoroughly check the piping to ensure that there is no risk of air or coolant leaking into the vacuum tank when it is placed in the vacuum tank again.
上記のように従来の装置はトラップの洗浄作業に時間と
労力を要し、非常に使いにくいものとなっていた。なお
真空蒸着装置に関しては、例えば特開昭５９−１３７９
０３号公報に記載されている。As mentioned above, conventional devices require time and effort to clean the traps, making them extremely difficult to use. Regarding vacuum evaporation equipment, for example, Japanese Patent Application Laid-Open No. 59-1379
It is described in Publication No. 03.
本発明は上記の欠点を解消し、トラップ−自体を洗浄せ
ず、しかも洗浄したと同様の効果を得るようにしたもの
である。The present invention solves the above-mentioned drawbacks, and achieves the same effect as cleaning the trap itself without having to clean it.
このｔこめ本発明は、トラップの汚損される面に金属板
よりなる着脱可能なカバーを取（１けて、洗浄作業を容
易にする。以下１本発明を実施例を参照１．て詳細に説
明する。In addition, the present invention includes a removable cover made of a metal plate on the contaminated surface of the trap (1) to facilitate cleaning work. explain.
第２図は、本発明の実施例を示す断面図で、本発明にお
いては前述したように、金属製の着脱自由のカバー９を
トラップ“ｌの内面に密着して取付け、ネジｌＯ等によ
ってトラップに固定する。この場合、カバー９は熱伝導
度が良好で、かつ表面が平滑でガスを放出するおそれの
少ない、例えばステンレス鋼、銅などの金属板により形
成し、トラップ７の内面に密着して取付ける。このため
、カバー９はトラップ７と同程度に十分低温に保たれ、
蒸発源３において加熱され蒸発した薄膜材料４は、試料
２に蒸着される以外はほとんどすべてカバー９の内面に
刺着する。FIG. 2 is a sectional view showing an embodiment of the present invention. In the present invention, as described above, a removable metal cover 9 is attached tightly to the inner surface of the trap "l", and the trap "l" is attached with a screw "l" or the like. In this case, the cover 9 is made of a metal plate, such as stainless steel or copper, which has good thermal conductivity, has a smooth surface, and is less likely to release gas, and is tightly attached to the inner surface of the trap 7. Therefore, the cover 9 is kept at a sufficiently low temperature to the same level as the trap 7.
Almost all of the thin film material 4 heated and evaporated in the evaporation source 3 sticks to the inner surface of the cover 9, except for being deposited on the sample 2.
よって、適宜の時期に真空槽１よりトラップ７をカバー
９ごと取り外し、次いでトラップ７よりカバー９を外し
て新しいカバーと交換したのち、再び真空槽内に取付け
る。もしくは、カバー９のみをトラップ７は真空槽ｌに
固定したまま取り外ことながら、カバー９は新品と交換
する代りに洗浄し、汚れを除去して再度使用することも
できる。なお、第２図ではカバー９の上端をトラップ７
より延長して試料２に近接させ、薄膜材料の真空槽内壁
への付着を防止した場合を示し、このようにトラップの
形状を変えることなく単にカバーを適当な形状とするこ
とにより、真空槽内壁の汚れを効果的に防ぐことができ
る。Therefore, at an appropriate time, remove the trap 7 along with the cover 9 from the vacuum chamber 1, then remove the cover 9 from the trap 7, replace it with a new cover, and then reinstall it in the vacuum chamber. Alternatively, only the cover 9 can be removed while the trap 7 remains fixed to the vacuum chamber 1, but the cover 9 can be washed to remove dirt and used again instead of being replaced with a new one. In addition, in FIG. 2, the upper end of the cover 9 is connected to the trap 7.
This shows a case in which the thin film material is prevented from adhering to the inner wall of the vacuum chamber by extending it closer to sample 2. In this way, by simply making the cover into an appropriate shape without changing the shape of the trap, the inner wall of the vacuum chamber is can effectively prevent stains.
以上説明したように本発明によるときは、従来用いられ
たトラップの薄膜材料の付着する面に適当な材質の金属
板よりなるカバーを着脱可能に密着して取付は固定し、
必要に応じて上記カバーのみ交換あるいは洗浄すること
により、トラップを洗浄するのと同等の効果を、トラッ
プの内面を損傷する等のおそれなく得ることができる。As explained above, according to the present invention, a cover made of a metal plate made of an appropriate material is removably attached to the surface of a conventionally used trap to which a thin film material is attached, and the attachment is fixed.
By replacing or cleaning only the cover as necessary, the same effect as cleaning the trap can be obtained without the risk of damaging the inner surface of the trap.
第１図は従来の真空蒸着装置を示す断面図、第２図は本
発明の実施例を示す断面図である。
雪−實面橘 リ−→）壷へ−ワー食ム詰 Ｊ−該ｎ八材
料、５・・・ヒータ、７・・・トラ・ンプ、９・・・カ
ッく−。
オ ｔＥｊ３FIG. 1 is a sectional view showing a conventional vacuum evaporation apparatus, and FIG. 2 is a sectional view showing an embodiment of the present invention. Yuki - Real Tachibana Lee - →) To the pot - War food stuffed J - The n8 ingredients, 5... Heater, 7... Tramp, 9... Kakku -. O tEj3
Claims (1)
着装置において、上記トラップに平滑な表面を有し熱伝
導度の良好な金属板よりなるカバーを着脱可能に電着し
て取付けたことを特徴とする真空蒸着装置。In a vacuum evaporation apparatus in which an evaporation source, a sample, and a trap are installed in a vacuum chamber, a cover made of a metal plate with a smooth surface and good thermal conductivity is removably attached to the trap by electrodeposition. Features of vacuum evaporation equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9113785A JPS60238476A (en) | 1985-04-30 | 1985-04-30 | Vacuum vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9113785A JPS60238476A (en) | 1985-04-30 | 1985-04-30 | Vacuum vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60238476A true JPS60238476A (en) | 1985-11-27 |
Family
ID=14018140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9113785A Pending JPS60238476A (en) | 1985-04-30 | 1985-04-30 | Vacuum vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60238476A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1491653A2 (en) * | 2003-06-13 | 2004-12-29 | Pioneer Corporation | Evaporative deposition methods and apparatus |
| KR100653372B1 (en) | 2004-07-14 | 2006-12-04 | 엘지전자 주식회사 | Source for depositing electroluminescent layer |
| JP2021066935A (en) * | 2019-10-25 | 2021-04-30 | 日本電子株式会社 | Indirect heating vapor deposition apparatus |
| JP2021085049A (en) * | 2019-11-26 | 2021-06-03 | 日本電子株式会社 | Indirect heating vapor deposition apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5145682A (en) * | 1974-10-18 | 1976-04-19 | Hitachi Ltd | SHINKUJOCHAKUSOCHI |
-
1985
- 1985-04-30 JP JP9113785A patent/JPS60238476A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5145682A (en) * | 1974-10-18 | 1976-04-19 | Hitachi Ltd | SHINKUJOCHAKUSOCHI |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1491653A2 (en) * | 2003-06-13 | 2004-12-29 | Pioneer Corporation | Evaporative deposition methods and apparatus |
| EP1491653A3 (en) * | 2003-06-13 | 2005-06-15 | Pioneer Corporation | Evaporative deposition methods and apparatus |
| KR100653372B1 (en) | 2004-07-14 | 2006-12-04 | 엘지전자 주식회사 | Source for depositing electroluminescent layer |
| JP2021066935A (en) * | 2019-10-25 | 2021-04-30 | 日本電子株式会社 | Indirect heating vapor deposition apparatus |
| JP2021085049A (en) * | 2019-11-26 | 2021-06-03 | 日本電子株式会社 | Indirect heating vapor deposition apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20220336192A1 (en) | Metal component and manufacturing method thereof and process chamber having the metal component | |
| JP2007177320A (en) | METHOD OF WASHING THIN FILM DEPOSITION UNIT FOR DEPOSITING Al-CONTAINING METAL FILM AND Al-CONTAINING METAL NITRIDE FILM | |
| JPS60238476A (en) | Vacuum vapor deposition device | |
| US7267132B2 (en) | Methods for removing silicon and silicon-nitride contamination layers from deposition tubes | |
| JPS6156277A (en) | Film forming device | |
| JPH0824503A (en) | Cold trap and device for producing semiconductor device | |
| Putner | Methods of cleaning glass by vapour degreasing and ultrasonically agitated solvents | |
| JP4582929B2 (en) | Deposition equipment | |
| JPH06220618A (en) | Vacuum film forming device and surface treatment of its component | |
| JP4149595B2 (en) | Raw material gas supply device | |
| JP2658947B2 (en) | Vertical diffusion furnace | |
| JP3029953B2 (en) | Semiconductor wafer heat treatment equipment | |
| JPH0312391A (en) | Molecular-beam crystal growing device | |
| JPH04103781A (en) | Phosphoric acid etching device | |
| JPS60164330A (en) | Device for decomposition of semiconductor thin film | |
| JP3344994B2 (en) | Resist stripping apparatus and resist stripping method | |
| JPS58209110A (en) | Plasma vapor growth apparatus | |
| JPS5988827A (en) | Vapor drying device | |
| JPS6364322A (en) | Vapor phase epitaxy equipment | |
| JPS6267165A (en) | Vacuum depositing apparatus | |
| JPH0665465U (en) | Vapor deposition equipment | |
| JPS63103064A (en) | Film forming device | |
| JPH10209259A (en) | Substrate holding container and substrate holding method | |
| JPH0568539B2 (en) | ||
| JPH0579944U (en) | Semiconductor wafer dryer |