JPH06220618A - Vacuum film forming device and surface treatment of its component - Google Patents
Vacuum film forming device and surface treatment of its componentInfo
- Publication number
- JPH06220618A JPH06220618A JP2181393A JP2181393A JPH06220618A JP H06220618 A JPH06220618 A JP H06220618A JP 2181393 A JP2181393 A JP 2181393A JP 2181393 A JP2181393 A JP 2181393A JP H06220618 A JPH06220618 A JP H06220618A
- Authority
- JP
- Japan
- Prior art keywords
- film
- component
- substrate
- film forming
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は真空成膜処理される基板
以外に膜形成される構成部品の膜の剥がれ落ちを、長期
にわたって防止することのできる真空成膜装置及びその
構成部品の表面処理方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum film forming apparatus capable of preventing film peeling of constituent parts other than a substrate subjected to vacuum film forming processing for a long period of time, and surface treatment of the constituent parts. Regarding the method.
【０００２】[0002]
【従来の技術】従来における真空成膜装置の一例とし
て、図５にグロー放電によって誘導する陰極スパッタ成
膜装置１を示す。このスパッタ成膜装置１は真空容器２
内に成膜源として、陰極３及び陽極４を対向させて配設
している。陰極３は真空容器１の上壁に取り付けられた
支持部品６を貫通し、その下端部にはターゲット７が取
り付けられている。また、陰極３の内部には冷却水を循
環させるために空所が設けられ、陰極３はここに冷却水
が循環することにより冷却される。陰極３の周部には筒
状のアースシールド１０が配設されている。2. Description of the Related Art As an example of a conventional vacuum film forming apparatus, FIG. 5 shows a cathode sputtering film forming apparatus 1 which is induced by glow discharge. This sputter film forming apparatus 1 includes a vacuum container 2
A cathode 3 and an anode 4 are arranged inside as opposed to each other as a film forming source. The cathode 3 penetrates the support component 6 attached to the upper wall of the vacuum container 1, and the target 7 is attached to the lower end thereof. Further, a space is provided inside the cathode 3 for circulating cooling water, and the cathode 3 is cooled by circulating cooling water there. A cylindrical earth shield 10 is arranged around the cathode 3.
【０００３】他方、陽極４は真空容器２の底壁上に配設
され、陽極４上には膜を成膜させる基板８が載置されて
いる。陽極４の直上方には開閉自在のシャッター９が配
設され、陰極３側と陽極４側を仕切る。更に、真空容器
２の底壁部の右方にはスパッタガス用のアルゴンガスを
導入するための導入配管１１が弁１３を介在させて接続
され、左方には真空容器２内の気体を排気するための排
気口１２が接続されている。また、真空容器２外にはグ
ロー放電用の電源５が設けられ、導線によりマイナス側
は陰極３にプラス側は陽極４に接続されている。尚、図
示されていないが上述した導入配管１１にはアルゴンが
収容されているガスボンベ、排気口１２には真空ポンプ
が接続されている。On the other hand, the anode 4 is arranged on the bottom wall of the vacuum container 2, and a substrate 8 on which a film is formed is placed on the anode 4. An openable / closable shutter 9 is arranged immediately above the anode 4 to partition the cathode 3 side and the anode 4 side. Further, an inlet pipe 11 for introducing argon gas for sputtering gas is connected to the right of the bottom wall of the vacuum container 2 with a valve 13 interposed, and the gas in the vacuum container 2 is exhausted to the left. The exhaust port 12 for connecting is connected. A power source 5 for glow discharge is provided outside the vacuum container 2, and a negative side is connected to a cathode 3 and a positive side is connected to an anode 4 by a conductive wire. Although not shown, the above-mentioned introducing pipe 11 is connected to a gas cylinder containing argon, and the exhaust port 12 is connected to a vacuum pump.
【０００４】このように構成されているスパッタ成膜装
置１の真空容器２は、図示されていない真空ポンプの駆
動により、排気口１２から内部の気体が排気される。真
空容器２内は所望の圧力に減圧されると、ガス導入配管
１１からスパッタガス（大気圧より低い）であるアルゴ
ンが導入されて充満される。次に、電源５により電圧が
陽極４と陰極３に印加されると、これらの間の空間にあ
る正イオンが陰極３に取り付けられているターゲット７
に衝突し、このターゲット７の表面及び表面下の原子層
からターゲット原子を放出させる。アースシールド１０
はこのグロー空放電を制御し基板に効率的な成膜を形成
させる。ターゲット７から放出された高エネルギー成膜
粒子である原子は基板８に膜を成膜するが、この基板８
の周りに配設されている部品、例えばシャッター９やア
ースシールド１０などの成膜装置部品にも膜を成膜して
しまう。基板８は所望の数μｍオーダの膜が形成される
と真空容器２外に取り出されるが、この基板８とは異な
りシールド板１０やシャッター９などの部品は膜が付着
したまま、膜厚数１０μｍ〜数ｍｍオーダーの厚さとな
るまでスパッタ成膜装置１は使用される。In the vacuum container 2 of the sputtering film forming apparatus 1 having the above structure, the gas inside is exhausted from the exhaust port 12 by driving a vacuum pump (not shown). When the inside of the vacuum container 2 is depressurized to a desired pressure, argon, which is a sputtering gas (lower than atmospheric pressure), is introduced from the gas introduction pipe 11 and filled. Next, when a voltage is applied to the anode 4 and the cathode 3 by the power source 5, the positive ions in the space between them are attached to the target 7 attached to the cathode 3.
The target atoms are emitted from the surface of the target 7 and the atomic layer below the surface. Earth shield 10
Controls this glow empty discharge to form an efficient film on the substrate. Atoms, which are high-energy film-forming particles emitted from the target 7, form a film on the substrate 8.
The film is also formed on the parts arranged around the device, for example, the film forming device parts such as the shutter 9 and the earth shield 10. The substrate 8 is taken out of the vacuum container 2 when a film of a desired order of several μm is formed, but unlike the substrate 8, parts such as the shield plate 10 and the shutter 9 have a film thickness of several 10 μm while the film remains attached. The sputtering film forming apparatus 1 is used until the thickness reaches the order of several mm.
【０００５】このような成膜のための構成部品であるシ
ールド板１０やシャッター９などの表面に放出される高
エネルギー成膜粒子は、膜形成時に膜表面の温度を上昇
させる。このため、上記構成部品の基材となる材質と膜
の材質が異なることから、これらの部材間に熱膨張差が
生じる。あるいは高エネルギー粒子の打ち込み効果によ
り膜内部の応力増加を引き起こし、これがシールド板１
０やシャッター９などの成膜装置部品の表面と成膜界面
で歪みを生じ、これらの膜が成膜処理中に剥がれ落ち、
これが基板８への成膜に対して良質の膜が形成されない
等の原因となる場合がある。The high-energy film-forming particles emitted to the surfaces of the shield plate 10 and the shutter 9, which are the components for film formation, raise the temperature of the film surface during film formation. Therefore, since the material of the base material of the above-mentioned component and the material of the film are different, a difference in thermal expansion occurs between these members. Alternatively, the implantation effect of high-energy particles causes an increase in stress inside the film, which causes the shield plate 1
0, the surface of the film forming device such as the shutter 9 and the film forming interface are distorted, and these films are peeled off during the film forming process,
This may cause a film of good quality not to be formed on the substrate 8.
【０００６】従来では、成膜装置部品から剥がれ落ちる
膜による製品不良を防止する為、作業経験から前記部品
を定期的に交換あるいは膜除去のためのクリーニングを
することにより、装置の使用中に膜の剥がれ落ちが生じ
ることを防止していた。しかし、成膜の内部応力以上の
保持力が従来の真空成膜装置部品の表面にはなく、数１
０〜１００μｍの膜厚程度で膜の剥がれ落ちが発生し、
部品の交換時期あるいはクリーニング時期の周期が短か
かった。そのため上記の時期を逸して、製品不良となる
こともあった。[0006] Conventionally, in order to prevent product defects due to a film peeling off from a film-forming apparatus component, it is necessary to periodically replace the component or perform cleaning for removing the film, based on work experience, so that the film can be formed during use of the apparatus. It was to prevent the peeling off. However, there is no holding force above the internal stress of film formation on the surface of conventional vacuum film forming equipment parts,
Film peeling occurs at a film thickness of 0 to 100 μm,
The cycle of parts replacement or cleaning was too short. As a result, the product may be defective at any of the above times.
【０００７】[0007]
【発明が解決しようとする課題】そこで、従来では基板
以外に成膜される成膜装置部品の表面には、物理的に粒
体吹き付け処理等や化学的な腐食処理等により微小な凹
凸を形成させ、膜の剥がれ落ちを防止していたが、それ
でも充分な効果が得られないという問題があった。Therefore, conventionally, minute irregularities are physically formed on the surface of a film-forming apparatus component other than the substrate by physically spraying particles or chemically corroding. Although the film was prevented from peeling off, there was a problem that the sufficient effect could not be obtained.
【０００８】本発明は上記問題に鑑みてなされ、真空容
器内の成膜装置部品に形成された膜を剥がれ難くするこ
とを可能にする真空成膜装置及びその構成部品の表面処
理方法を提供することを目的とする。The present invention has been made in view of the above problems, and provides a vacuum film forming apparatus and a surface treatment method for the constituent parts thereof, which makes it difficult to peel off a film formed on a film forming apparatus part in a vacuum container. The purpose is to
【０００９】[0009]
【課題を解決するための手段】以上の目的は、真空容器
内の基板の周りに配設されている構成部品のうち、前記
基板以外に膜が成膜される部品の真空成膜装置の構成部
品の表面処理方法において、前記部品は化学的性質の異
なる２種以上の材料を混合した複合材料で作成し、前記
２種以上の材料のうち少なくとも１種以上の材料を残し
て、その他の材料を化学的手段により除去したことを特
徴とする真空成膜装置の構成部品の表面処理方法によっ
て達成される。SUMMARY OF THE INVENTION The above object is to provide a structure of a vacuum film forming apparatus for forming a film on a substrate other than the substrate among the components arranged around the substrate in the vacuum container. In the surface treatment method for a part, the part is made of a composite material in which two or more kinds of materials having different chemical properties are mixed, and at least one kind or more of the two or more kinds of materials is left and other materials are used. Is removed by a chemical means. This is achieved by a surface treatment method for components of a vacuum film forming apparatus.
【００１０】また以上の目的は、真空容器内の基板の周
りに配設されている構成部品のうち、前記基板以外に膜
が成膜される部品の表面処理をする真空成膜装置の構成
部品の表面処理方法において、前記部品の表面に化学的
性質の異なる２種以上の材料を混合したものをコーティ
ングし、該コーティングにより前記部品の表面に形成さ
れた材料膜から、前記２種以上の材料のうち少なくとも
１種以上の材料を残して、その他の材料を化学的手段に
より除去したことを特徴とする真空成膜装置の構成部品
の表面処理方法によって達成される。Further, the above-mentioned object is a component of a vacuum film-forming apparatus for surface-treating a component other than the substrate, among the components arranged around the substrate in the vacuum container, for surface treatment. In the surface treatment method described above, the surface of the component is coated with a mixture of two or more materials having different chemical properties, and the material film formed on the surface of the component by the coating is coated with the two or more materials. Among them, at least one kind of material is left, and the other materials are removed by chemical means, which is achieved by a surface treatment method for components of a vacuum film forming apparatus.
【００１１】また以上の目的は、真空容器内の基板の周
りに配設されている構成部品のうち、前記基板以外に膜
が成膜される部品の真空成膜装置の構成部品の表面処理
方法において、前記部品は物理的性質の異なる２種以上
の材料を混合した複合材料で作成し、前記２種以上の材
料のうち少なくとも１種以上の材料を残して、その他の
材料を物理的手段により除去したことを特徴とする真空
成膜装置の構成部品の表面処理方法によって達成され
る。Further, the above object is to provide a surface treatment method for a component of a vacuum film forming apparatus for a component of which a film is formed on a substrate other than the substrate among the components arranged around the substrate in the vacuum container. In the above, the component is made of a composite material in which two or more kinds of materials having different physical properties are mixed, and at least one kind or more of the two or more kinds of materials is left, and the other materials are made by physical means. It is achieved by a method for surface treatment of components of a vacuum film forming apparatus, which is characterized by being removed.
【００１２】また以上の目的は、真空容器内の基板の周
りに配設されている構成部品のうち、前記基板以外に膜
が成膜される部品の表面処理をする真空成膜装置の構成
部品の表面処理方法において、前記部品の表面に物理的
性質の異なる２種以上の材料を混合したものをコーティ
ングし、該コーティングにより前記部品の表面に形成さ
れた材料膜から、前記２種以上の材料のうち少なくとも
１種以上の材料を残して、その他の材料を物理的手段に
より除去したことを特徴とする真空成膜装置の構成部品
の表面処理方法によって達成される。[0012] Further, the above-mentioned object is, of the components arranged around the substrate in the vacuum container, the components of the vacuum film forming apparatus for surface-treating the components other than the substrate on which the film is formed. In the surface treatment method described above, the surface of the component is coated with a mixture of two or more kinds of materials having different physical properties, and the material film formed on the surface of the part by the coating is coated with the two or more kinds of materials. Among them, at least one kind of material is left, and the other materials are removed by physical means. This is achieved by a surface treatment method for a component of a vacuum film forming apparatus.
【００１３】また以上の目的は、真空容器内に収容され
た基板に膜を成膜する真空成膜装置において、前記基板
の周りに配設されている構成部品のうち、該基板以外に
膜が成膜される部品の表面を多数の凹凸形状とし、且つ
少なくとも該部品の内部の表面近傍を多孔質にしたこと
を特徴とする真空成膜装置によって達成される。Further, in the vacuum film forming apparatus for forming a film on a substrate housed in a vacuum container, among the components arranged around the substrate, the film is formed on the substrate other than the substrate. This is achieved by a vacuum film forming apparatus characterized in that the surface of a component to be film-formed has a large number of irregular shapes and at least the vicinity of the surface inside the component is made porous.
【００１４】[0014]
【作用】真空容器の周りに配設されている部品を化学的
または物理的性質の異なる２種以上の材料でなる複合材
料で作成し、これらの２種以上の材料のうち少なくとも
１種以上の材料を残して、その他の材料を化学的または
物理的手段により除去する。または、真空容器の周りに
配設されている部品の表面に化学的または物理的性質の
異なる２種以上の材料をコーティングし、その部品の表
面からコーティングした材料膜の２種以上の材料のうち
少なくとも１種以上の材料を残して、その他の材料を化
学的または物理的手段により除去する。これらにより、
真空容器の基板の周りに配設される部品の表面に多数の
凹凸形状が形成され、またその表面層内も多孔質にな
る。この表面の大小複雑な凹凸形状及び表面層内の多孔
質による空隙は、膜が成膜したときに発生する内部応力
を凹凸形状及び多孔質部へ分散、解放することにより緩
和し、また表面のより複雑な凹凸形状は投錨効果をより
確実なものとし、膜の剥がれ落ちを長期にわたり防止す
ることができる。The components arranged around the vacuum vessel are made of a composite material composed of two or more kinds of materials having different chemical or physical properties, and at least one kind of these two or more kinds of materials is used. The material is left behind and the other materials are removed by chemical or physical means. Alternatively, of the two or more kinds of materials of the material film obtained by coating the surfaces of the parts arranged around the vacuum container with two or more kinds of materials having different chemical or physical properties, and coating from the surface of the parts. The other materials are removed by chemical or physical means, leaving at least one or more materials. With these,
A large number of irregular shapes are formed on the surface of the component arranged around the substrate of the vacuum container, and the surface layer is also porous. The large and small irregularities on the surface and the voids due to the porosity in the surface layer alleviate the internal stress generated when the film is formed by dispersing and releasing the internal stress in the irregularities and the porous portion. The more complicated uneven shape makes the anchoring effect more reliable and can prevent the film from peeling off for a long time.
【００１５】[0015]
【実施例】次に、本発明の第１実施例による真空成膜装
置及びその構成部品の表面処理方法について図面を参照
して説明する。尚、従来例の同じ部分については同一の
符号を付し、その詳細な説明は省略する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a vacuum film forming apparatus and a surface treatment method for its components according to a first embodiment of the present invention will be described with reference to the drawings. The same parts as those in the conventional example are designated by the same reference numerals, and detailed description thereof will be omitted.
【００１６】図１は本発明に係わるスパッタ成膜装置２
１を示す。この真空容器２内は陰極３と陽極４とが対向
して配設され、それらの間には開閉自在のシャッター１
９が配設されている。このシャッター１９は真空容器２
内の基板の周りに配設されている構成部品のうち、基板
８の成膜中に膜が成膜されてしまう部品の一つである。
図ではシャッター１９は閉状態で陰極３側と陽極４側を
仕切り、開状態では図示されていないシャッター１９の
収容場所に収容される。このシャター１９は母材である
基材１９ａにチタン（Ｔｉ）をコーティングしたもので
あり、表面層が多孔質で表面に大小の凹凸が形成される
ように表面処理されている。FIG. 1 shows a sputtering film forming apparatus 2 according to the present invention.
1 is shown. In the vacuum container 2, a cathode 3 and an anode 4 are arranged so as to face each other, and a shutter 1 that can be opened and closed is provided between them.
9 are provided. This shutter 19 is the vacuum container 2
Among the components arranged around the substrate inside, the film is one of the components in which a film is formed during the film formation of the substrate 8.
In the figure, the shutter 19 partitions the cathode 3 side and the anode 4 side in the closed state, and is housed in an unillustrated housing place of the shutter 19 in the opened state. The shutter 19 is formed by coating a base material 19a as a base material with titanium (Ti), and has a surface layer that is porous and is surface-treated so that large and small irregularities are formed on the surface.
【００１７】以下、この表面処理の方法について説明す
る。図２のＡはシャッター１９が表面処理される前の基
材１９ａを示し、この基材１９ａの材質はＳＵＳ３０４
（ステンレス）からなる。この基材１９ａの表面に２種
の金属を混合し、溶射処理を行なうのであるが、本実施
例ではチタン（Ｔｉ）と銅（Ｃｕ）の混合融滴粒子を吹
き付けて、基材１９ａの表面を被覆している。そして、
このチタンと銅の混合物が被覆された基材１９ａを、硝
酸水溶液が収容されている容器に浸漬する。この硝酸水
溶液には銅のみが溶けて、図２のＢに示すように、基材
１９ａの表面にはチタンのみの表面層１９ｂが形成され
る。この表面層１９ｂは表面に多数の大小の凹凸が形成
され、内部にも多数の孔ｈが形成されている。この表面
層１９ｂが基材１９ａに形成されたものが、シャッター
１９となる。尚、シャッター１９の表面粗さは１３μｍ
であり、図では誇張して厚く示している。The method of this surface treatment will be described below. 2A shows a base material 19a before the shutter 19 is surface-treated, and the material of the base material 19a is SUS304.
Made of (stainless steel). Two kinds of metals are mixed on the surface of the base material 19a to perform the thermal spraying treatment. In this embodiment, the mixed droplet particles of titanium (Ti) and copper (Cu) are sprayed to the surface of the base material 19a. Is covered. And
The base material 19a coated with this mixture of titanium and copper is immersed in a container containing an aqueous nitric acid solution. Only copper is dissolved in this nitric acid aqueous solution, and as shown in FIG. 2B, a surface layer 19b made of only titanium is formed on the surface of the base material 19a. The surface layer 19b has a large number of large and small irregularities formed on its surface, and a large number of holes h formed therein. The shutter 19 is obtained by forming the surface layer 19b on the base material 19a. The surface roughness of the shutter 19 is 13 μm.
And is exaggeratedly thick in the figure.
【００１８】図３のＡは上述したシャッター１９が表面
処理される前の、基材１９ａの表面のＳＥＭ写真（倍率
２００倍、後述する他のＳＥＭ写真についても倍率は２
００倍である。）であり、図３のＢはシャッター１９が
表面処理された後のＳＥＭ写真である。図３のＡに示す
ように基材１９ａの表面はほぼ平坦面であるのに対し、
シャッター１９の表面は図３のＢに示すように銅が溶け
た所に凹凸が形成され、表面層１９ｂ内の内部にも銅が
溶けた孔ｈが形成されているのが分かる。図３のＣは本
実施例との比較例１で、従来技術のドライブラスト処理
で基材に凹凸を形成したもののＳＥＭ写真である。基材
１９ａと同様に基材質にＳＵＳ３０４を用い、これに
（アルミナ）Ａｌ2 Ｏ3 の８０メッシュの粒子を吹き付
けて表面に凹凸を形成させている。本実施例の表面層１
９ｂとは異なり、表面はほぼ平坦であまり凹凸がなく、
表面内部にも孔は形成されていないのが分かる。FIG. 3A shows a SEM photograph of the surface of the base material 19a before the surface treatment of the above-mentioned shutter 19 (magnification: 200 times; other SEM photographs described later also have a magnification of 2).
It is 00 times. 3B is a SEM photograph after the shutter 19 is surface-treated. As shown in A of FIG. 3, the surface of the base material 19a is almost flat, whereas
It can be seen that as shown in FIG. 3B, the surface of the shutter 19 has irregularities formed where copper is melted, and holes h where copper is melted are also formed inside the surface layer 19b. C of FIG. 3 is a comparative example 1 of this example, and is an SEM photograph of a substrate having concavities and convexities formed by a conventional drive-last process. Similar to the base material 19a, SUS304 was used as the base material, and 80 mesh particles of (alumina) Al 2 O 3 were sprayed onto this to form irregularities on the surface. Surface layer 1 of this example
Unlike 9b, the surface is almost flat and there is not much unevenness,
It can be seen that no holes are formed inside the surface.
【００１９】図４のＡ〜Ｃは基材質がチタンである場合
の比較例であり、図４のＡは表面処理のなされていない
チタンの表面のＳＥＭ写真である。図４のＢは比較例２
であり、従来技術のドライブラスト処理で基材に凹凸を
形成したもののＳＥＭ写真である。基材１９ａとは異な
り基材質にチタンを用い、これにアルミナ（Ａｌ2 Ｏ
3 ）の８０メッシュの粒子を吹き付けて表面に凹凸を形
成させている。本実施例の表面層１９ｂとは異なり、表
面はほぼ平坦で表面内部にも孔は形成されていないのが
分かる。図４のＣは比較例３で基材質にチタンを用い、
これに同じくチタンの融滴粒子を吹き付ける溶射処理を
施している。これは表面に多少の凹凸はあるが、本実施
例の図３のＢに示すように表面に形成された凹凸形状に
比べると、本実施例ほど顕著ではない。表１に本第１実
施例及び上述した比較例１〜３の各基材質の表面粗さの
違いを示す。4A to 4C are comparative examples in which the substrate material is titanium, and FIG. 4A is a SEM photograph of the surface of titanium not surface-treated. B of FIG. 4 is Comparative Example 2
FIG. 3 is an SEM photograph of a substrate having concavities and convexities formed by a conventional dry-blast treatment. Unlike the base material 19a, titanium is used as the base material and alumina (Al 2 O
80 mesh particles of 3 ) are sprayed to form irregularities on the surface. It can be seen that, unlike the surface layer 19b of this example, the surface is substantially flat and no holes are formed inside the surface. C of FIG. 4 is Comparative Example 3 in which titanium is used as the base material,
This is also subjected to a thermal spraying process of spraying titanium droplets. Although there are some irregularities on the surface, this is not as remarkable as that of this example as compared with the irregular shape formed on the surface as shown in FIG. 3B of this example. Table 1 shows the difference in surface roughness between the base materials of the first embodiment and the above-described comparative examples 1 to 3.
【００２０】[0020]
【表１】 [Table 1]
【００２１】表１から分かるように表面粗さは本第１実
施例の１３μｍと比較例１〜３と比べ、本実施例のもの
が最も粗いのが分かる。また、成膜厚さ（成膜される膜
の剥がれ落ちが生じない膜の厚さ。）も１ｍｍと、他の
比較例１〜３よりも厚く、成膜の保持性が良く、従来の
５倍の耐剥離効果がある。本実施例では、このように表
面処理されたシャッター１９がスパッタ成膜装置に用い
られ、また説明を省略するがアースシールド２０にもシ
ャッター１９と同様な表面処理を施したものがスパッタ
成膜装置２１に使用されている。また、基板８に膜を成
膜させるため、ターゲット７にはチタンが使用される。As can be seen from Table 1, the surface roughness is 13 μm of the first embodiment and Comparative Examples 1 to 3 show that the surface roughness of this embodiment is the most rough. In addition, the thickness of the formed film (the thickness of the film on which the formed film does not peel off) is 1 mm, which is thicker than the other comparative examples 1 to 3 and has good film-holding property. Has a double anti-peeling effect. In this embodiment, the shutter 19 thus surface-treated is used in the sputter film forming apparatus, and although the description is omitted, the earth shield 20 having the same surface treatment as the shutter 19 is used in the sputter film forming apparatus. It is used for 21. Further, titanium is used for the target 7 in order to form a film on the substrate 8.
【００２２】以上、本発明の第１実施例によるスパッタ
成膜装置２１の構成について説明したが、次にその作用
について説明する。The structure of the sputter film forming apparatus 21 according to the first embodiment of the present invention has been described above. Next, its operation will be described.
【００２３】図示されていない真空ポンプの駆動によ
り、真空容器２内から気体が排気される。真空容器２内
は１０-6Ｔｏｒｒまで減圧されると、ガス導入配管１１
からスパッタガスであるアルゴンが導入されて、真空容
器２内は１０-3Ｔｏｒｒとなるように満たされる。電源
５により２００Ｖの電圧が陽極４と陰極３との間に印加
される。上述したように基板８にＴｉＮの膜が成膜され
るが、この基板８の周りに配設されている部品、例えば
シャッター１９やアースシールド２０などの成膜装置部
品にも、作業者の意に反してＴｉＮの膜が成膜される。
基板８は所望の数μｍオーダの膜が形成されると真空容
器２外に取り出されるが、この基板８とは異なりアース
シールド２０やシャッター１９などの部品は膜が付着し
たまま、スパッタ成膜装置２１は引き続き使用される。The gas is exhausted from the inside of the vacuum container 2 by driving a vacuum pump (not shown). When the pressure inside the vacuum container 2 is reduced to 10 −6 Torr, the gas introduction pipe 11
Argon, which is a sputtering gas, is introduced from the inside to fill the inside of the vacuum chamber 2 to 10 −3 Torr. A voltage of 200 V is applied between the anode 4 and the cathode 3 by the power supply 5. As described above, the TiN film is formed on the substrate 8. However, even if the components arranged around the substrate 8 such as the film forming device components such as the shutter 19 and the earth shield 20 are used by the operator, Contrary to this, a TiN film is formed.
The substrate 8 is taken out of the vacuum container 2 when a desired film of the order of several μm is formed, but unlike the substrate 8, parts such as the earth shield 20 and the shutter 19 remain attached to the film, and the sputtering film forming apparatus is used. 21 is still used.
【００２４】図２のＢ及び図３のＢに示されるように、
シャッター１９の表面は多数の複雑な凹凸が形成され、
膜となる原子がこの凹凸面の間隙に成膜することによ
り、投錨効果がもたらされ、これが膜の剥がれ落ちを防
止する。また、膜の成膜時に生じる基材１９ａと膜の熱
膨張差により生じる内部応力は、表面層１９ｂの表面の
凹凸部及び表面層１９ｂ内部に存在する孔ｈ部へ分散、
解放することにより緩和し、歪みによる膜の剥がれ落ち
を防止する。これにより、従来よりも厚い膜がシャッタ
ー１９やアースシールド２０に成膜しても、これらの膜
が基板８に落下することは大巾に軽減し、基板８に形成
される膜に不純物が混ざり込むことも殆どなくなる。従
って、これらのクリーニングを行なう時期の間隔も充分
に開けることができる。As shown in FIG. 2B and FIG. 3B,
The surface of the shutter 19 has a large number of complicated irregularities,
Atoms forming a film are formed in the gaps between the uneven surfaces to provide an anchoring effect, which prevents the film from peeling off. Further, the internal stress generated by the difference in thermal expansion between the base material 19a and the film, which is generated at the time of forming the film, is dispersed into the irregularities on the surface of the surface layer 19b and the holes h existing inside the surface layer 19b,
Releasing it relaxes it and prevents the film from peeling off due to strain. As a result, even if a film thicker than the conventional one is formed on the shutter 19 or the earth shield 20, the drop of these films on the substrate 8 is greatly reduced, and the film formed on the substrate 8 contains impurities. Almost no crowding. Therefore, the intervals between the cleanings can be sufficiently widened.
【００２５】尚、本実施例では基材１９ａに被覆した２
種以上の混合物は、シャッター１９に成膜される膜への
耐剥離効果を均一にする観点から、均一分散混合するこ
とが望ましい。また、シャッター１９の表面層１９ｂの
材質は成膜される膜の材質と同一か、又はこれと同程度
以下の熱膨張係数を有する材質が好ましい。In this embodiment, the base material 19a coated with 2
It is desirable that the mixture of at least one kind is uniformly dispersed and mixed from the viewpoint of making the peeling resistance effect on the film formed on the shutter 19 uniform. The material of the surface layer 19b of the shutter 19 is preferably the same as the material of the film to be formed, or a material having a thermal expansion coefficient equal to or less than this.
【００２６】次に、本発明の第２実施例による真空成膜
装置及びその構成部品の表面処理方法について説明す
る。尚、本実施例では第１実施例で説明したシャッター
のみについて説明する。Next, a vacuum film forming apparatus and a surface treatment method for its components according to the second embodiment of the present invention will be described. In this embodiment, only the shutter described in the first embodiment will be described.
【００２７】図２のＡに示す第１実施例で用いたＳＵＳ
３０４である基材１９ａ面にモリブデン（Ｍｏ）とアル
ミニウム（Ａｌ）の混合融滴粒子を溶射処理で吹き付け
て、基材１９ａの表面を被覆する。そして、このモリブ
デンとアルミニウムとの混合物が被覆された基材１９ａ
を８００℃の雰囲気に放置し、アルミニウムを融解除去
する。この温度では融点の低いアルミニウムのみが溶
け、これが溶けると基材１９ａの表面はモリブデンリッ
チのみで被膜され、多数の大小の凹凸が形成され、表面
層内にも多数の孔が形成される。上述した表１の実施例
２に示すように、基材１９ａに被膜されたモリブデンリ
ッチの表面粗さは１２μｍであり、本第１実施例とほぼ
同様であり、比較例１〜３よりも表面は粗い。また、成
膜厚さの１ｍｍと他の比較例１〜３よりも厚い。本実施
例でも第１実施例で説明したスパッタ成膜装置２１にこ
の表面処理を施したシャッターを用いると、第１実施例
と同様な効果を有することは明らかである。SUS used in the first embodiment shown in FIG. 2A
A mixed droplet of molybdenum (Mo) and aluminum (Al) is sprayed onto the surface of the base material 19a, which is 304, by a thermal spraying process to cover the surface of the base material 19a. Then, the base material 19a coated with this mixture of molybdenum and aluminum
Is left in an atmosphere of 800 ° C. to melt and remove aluminum. At this temperature, only aluminum having a low melting point is melted, and when this is melted, the surface of the base material 19a is coated only with molybdenum-rich, large and small irregularities are formed, and a large number of holes are also formed in the surface layer. As shown in Example 2 of Table 1 described above, the surface roughness of the molybdenum-rich coating on the base material 19a is 12 μm, which is almost the same as that of the first example, and is more surface than Comparative Examples 1 to 3. Is coarse. Further, the film thickness is 1 mm, which is thicker than the other comparative examples 1 to 3. Also in this embodiment, it is apparent that the same effect as that of the first embodiment can be obtained by using the surface-treated shutter in the sputtering film forming apparatus 21 described in the first embodiment.
【００２８】次に、本発明の第３実施例による真空成膜
装置及びその構成部品の表面処理方法について説明す
る。Next, a vacuum film forming apparatus and a surface treatment method for its components according to a third embodiment of the present invention will be described.
【００２９】チタンとアルミニウムの混合粒子をアーク
溶解により溶融混合した複合材料をを用い、図２のＡに
示すような板状の基板を作成する。このチタンとアルミ
ニウムの複合材料からなる基板を塩酸水溶液が収容され
ている容器に浸漬する。この塩酸水溶液にはアルミニウ
ムのみが溶けて、図２のＣに示すシャッター２２ができ
上がる。このチタンからなるシャッター２２は表面に多
数の大小の凹凸が形成され、上述の表１の実施例３に示
すようにこのチタンリッチの表面粗さは１３μｍであ
り、成膜厚さも１．０ｍｍと第１実施例と同様であり、
比較例よりも向上している。また、第１実施例のように
表面層のみならず内部全体にわたって多数の孔ｈ’が形
成されている。本実施例でも第１及び第２実施例よりも
製作が容易でそれと同様か、又はそれ以上の効果を奏す
ることは明らかである。尚、本実施例では化学的手段に
より、複合材料の表面に多数の凹凸を形成し、且つ内部
に多数の孔ｈ’を形成したが、第２実施例のように物理
的手段にも応用ができることは明らかである。A plate-shaped substrate as shown in FIG. 2A is prepared by using a composite material obtained by melting and mixing mixed particles of titanium and aluminum by arc melting. The substrate made of the composite material of titanium and aluminum is dipped in a container containing an aqueous hydrochloric acid solution. Only aluminum is dissolved in this hydrochloric acid aqueous solution to complete the shutter 22 shown in FIG. 2C. A large number of large and small irregularities are formed on the surface of the shutter 22 made of titanium. As shown in Example 3 of Table 1 above, the titanium-rich surface roughness is 13 μm and the film thickness is 1.0 mm. Similar to the first embodiment,
It is better than the comparative example. Further, as in the first embodiment, a large number of holes h ′ are formed not only in the surface layer but also in the entire interior. It is apparent that the present embodiment is also easier to manufacture than the first and second embodiments and exhibits the same or higher effect. In this example, a large number of irregularities were formed on the surface of the composite material by chemical means and a large number of holes h ′ were formed inside, but it can also be applied to physical means as in the second example. It is clear that you can do it.
【００３０】以上、本発明の各実施例について説明した
が、勿論、本発明はこれらに限定されることなく、本発
明の技術的思想に基いて種々の変形が可能である。Although the respective embodiments of the present invention have been described above, needless to say, the present invention is not limited to these, and various modifications can be made based on the technical idea of the present invention.
【００３１】例えば、以上の第１実施例ではシャッター
１９及びアースシールド２０のみに本発明に関わる表面
処理を施したが、例えば真空容器内の成膜装置部品であ
る他の部品、例えば真空容器の内壁など、膜が作業者の
意に反して成膜される部品であれば、それらにも勿論、
適用が可能である。For example, in the first embodiment described above, only the shutter 19 and the earth shield 20 are subjected to the surface treatment according to the present invention. However, for example, other parts such as film forming device parts in a vacuum container, such as a vacuum container, are used. If the film is formed against the operator's will, such as inner walls, of course,
Applicable.
【００３２】また、以上の各実施例では基部品１９ａの
表面に化学的又は物理的性質の異なる２種の材料を溶射
した後、前記部品の表面から該２種の材料のうち１種の
材料を残して、他の材料を化学的又は物理的手段により
除去したが、これに限らず、化学的又は物理的性質の異
なる２種以上の材料を基部品１９ａの表面に溶射した
後、基部品１９ａの表面から該２種以上の材料のうち少
なくとも１種以上の材料を残して、他の材料を化学的又
は物理的手段により除去するようにしてもよいし、更に
それらの混合比については基材と成膜される膜との熱膨
張率の差などを考慮して、適宜考えることができる。In each of the above embodiments, after spraying two kinds of materials having different chemical or physical properties on the surface of the base part 19a, one of the two kinds of materials is sprayed from the surface of the part. Other materials were removed by chemical or physical means, but the present invention is not limited to this, and after spraying two or more kinds of materials having different chemical or physical properties on the surface of the base component 19a, At least one of the two or more materials may be left on the surface of 19a and the other materials may be removed by a chemical or physical means. It can be appropriately considered in consideration of the difference in coefficient of thermal expansion between the material and the film to be formed.
【００３３】また更に以上の各実施例によれば、真空成
膜装置としてスパッタ成膜装置を用いたが、他のプラズ
マなどの成膜方法を用いた装置にも勿論、適用すること
ができる。Further, according to each of the above embodiments, the sputtering film forming apparatus is used as the vacuum film forming apparatus, but it is of course applicable to an apparatus using another film forming method such as plasma.
【００３４】[0034]
【発明の効果】以上述べたように、本発明の真空成膜装
置及びその構成部品の表面処理方法によれば、基板に膜
を成膜させるときに、基板以外に膜が成膜される構成部
品から基板へ膜が落ちるのを軽減することができ、基板
の成膜不良の発生を軽減する。また、真空容器内のクリ
ーニングの周期が延び、装置のランニングコストが低減
する。As described above, according to the vacuum film forming apparatus and the surface treatment method of its components of the present invention, when the film is formed on the substrate, the film is formed on the part other than the substrate. It is possible to reduce the film falling from the component onto the substrate, and to reduce the occurrence of defective film formation on the substrate. Further, the cleaning cycle in the vacuum container is extended, and the running cost of the apparatus is reduced.
【図１】本発明の第１実施例による真空成膜装置の概略
断面図である。FIG. 1 is a schematic sectional view of a vacuum film forming apparatus according to a first embodiment of the present invention.
【図２】Ａは同装置に使用されているシャッターの基材
を示す断面図であり、Ｂは表面処理されたシャッターの
断面図であり、Ｃは本発明の第３実施例による真空成膜
装置に使用されているシャッターの断面図である。2A is a cross-sectional view showing a substrate of a shutter used in the same apparatus, B is a cross-sectional view of a surface-treated shutter, and C is a vacuum film formation according to a third embodiment of the present invention. It is sectional drawing of the shutter used for the apparatus.
【図３】各々倍率２００倍で、Ａはシャッターの基材の
表面部の断面を示すＳＥＭ写真であり、Ｂは本実施例の
シャッターの表面層を示すＳＥＭ写真であり、Ｃは比較
例１の表面部を示すＳＥＭ写真である。FIG. 3 is a SEM photograph showing a cross section of a surface portion of a base material of a shutter, B is a SEM photograph showing a surface layer of a shutter of this example, and C is a comparative example 1 at a magnification of 200 times. 3 is an SEM photograph showing the surface portion of the.
【図４】各々倍率２００倍で、Ａは基部品にチタンを用
いた場合の表面部の断面を示すＳＥＭ写真であり、Ｂは
比較例２の表面部を示すＳＥＭ写真であり、Ｃは比較例
３の表面部を示すＳＥＭ写真である。4 is a SEM photograph showing a cross section of a surface portion when titanium is used for a base component, B is a SEM photograph showing a surface portion of Comparative Example 2, and C is a comparison at a magnification of 200 times. 5 is an SEM photograph showing the surface portion of Example 3.
【図５】従来のスパッタ成膜装置の概略断面図である。FIG. 5 is a schematic cross-sectional view of a conventional sputtering film forming apparatus.
２ 真空容器 ８ 基板 １９ シャッター １９ｂ 表面層 ２０ アースシールド ２１ スパッタ成膜装置 ２２ シャッター 2 vacuum container 8 substrate 19 shutter 19b surface layer 20 earth shield 21 sputter film forming device 22 shutter
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成６年１月２６日[Submission date] January 26, 1994
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図３[Name of item to be corrected] Figure 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図３】 各々倍率２００倍で、Ａはシャッターの基材
の表面部の断面の金属組織を表わすＳＥＭ写真であり、
Ｂは本実施例のシャッターの表面層の金属組織を表わす
ＳＥＭ写真であり、Ｃは比較例１の表面部の金属組織を
表わすＳＥＭ写真である。FIG. 3 is a SEM photograph showing a metal structure of a cross section of a surface portion of a base material of a shutter at a magnification of 200 times.
B is an SEM photograph showing the metallographic structure of the surface layer of the shutter of this example, and C is the metallographic structure of the surface portion of Comparative Example 1.
It is a SEM photograph to represent .
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図４[Name of item to be corrected] Fig. 4
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図４】 各々倍率２００倍で、Ａは基部品にチタンを
用いた場合の表面部の断面の金属組織を表わすＳＥＭ写
真であり、Ｂは比較例２の表面部の金属組織を表わすＳ
ＥＭ写真であり、Ｃは比較例３の表面部の金属組織を表
わすＳＥＭ写真である。4 is a SEM photograph showing a cross-sectional metallographic structure of a surface portion in the case where titanium is used for a base component, and B is a S representing a metallographic structure of a surface portion of Comparative Example 2, at a magnification of 200 times.
8 is an EM photograph, and C shows the metal structure of the surface portion of Comparative Example 3.
It is a SEM photograph of the forehead .
Claims (5)
る構成部品のうち、前記基板以外に膜が成膜される部品
の真空成膜装置の構成部品の表面処理方法において、前
記部品は化学的性質の異なる２種以上の材料を混合した
複合材料で作成し、前記２種以上の材料のうち少なくと
も１種以上の材料を残して、その他の材料を化学的手段
により除去したことを特徴とする真空成膜装置の構成部
品の表面処理方法。1. A surface treatment method for a component of a vacuum film forming apparatus for a component, which is formed around a substrate in a vacuum container and has a film formed on a substrate other than the substrate, wherein: Is made of a composite material in which two or more kinds of materials having different chemical properties are mixed, and at least one kind or more of the two or more kinds of materials is left, and the other materials are removed by chemical means. A method for surface treatment of component parts of a vacuum film forming apparatus, which is characterized.
る構成部品のうち、前記基板以外に膜が成膜される部品
の表面処理をする真空成膜装置の構成部品の表面処理方
法において、前記部品の表面に化学的性質の異なる２種
以上の材料を混合したものをコーティングし、該コーテ
ィングにより前記部品の表面に形成された材料膜から、
前記２種以上の材料のうち少なくとも１種以上の材料を
残して、その他の材料を化学的手段により除去したこと
を特徴とする真空成膜装置の構成部品の表面処理方法。2. A surface treatment method for a component of a vacuum film forming apparatus, which performs a surface treatment of a component, other than the substrate, on which a film is formed, of the components arranged around the substrate in the vacuum container. In, the surface of the component is coated with a mixture of two or more kinds of materials having different chemical properties, and from the material film formed on the surface of the component by the coating,
A surface treatment method for a component of a vacuum film forming apparatus, characterized in that at least one of the two or more materials is left and the other materials are removed by chemical means.
る構成部品のうち、前記基板以外に膜が成膜される部品
の真空成膜装置の構成部品の表面処理方法において、前
記部品は物理的性質の異なる２種以上の材料を混合した
複合材料で作成し、前記２種以上の材料のうち少なくと
も１種以上の材料を残して、その他の材料を物理的手段
により除去したことを特徴とする真空成膜装置の構成部
品の表面処理方法。3. A surface treatment method for a component of a vacuum film-forming apparatus for a component, in which a film is deposited on a substrate other than the substrate, of the components arranged around a substrate in a vacuum container. Is made of a composite material in which two or more kinds of materials having different physical properties are mixed, and at least one kind or more of the two or more kinds of materials is left, and the other materials are removed by physical means. A method for surface treatment of component parts of a vacuum film forming apparatus, which is characterized.
る構成部品のうち、前記基板以外に膜が成膜される部品
の表面処理をする真空成膜装置の構成部品の表面処理方
法において、前記部品の表面に物理的性質の異なる２種
以上の材料を混合したものをコーティングし、該コーテ
ィングにより前記部品の表面に形成された材料膜から、
前記２種以上の材料のうち少なくとも１種以上の材料を
残して、その他の材料を物理的手段により除去したこと
を特徴とする真空成膜装置の構成部品の表面処理方法。4. A surface treatment method for a component of a vacuum film forming apparatus, which performs a surface treatment on a component, other than the substrate, on which a film is formed, of the components arranged around a substrate in a vacuum container. In, the surface of the component is coated with a mixture of two or more kinds of materials having different physical properties, and from the material film formed on the surface of the component by the coating,
A surface treatment method for a component of a vacuum film forming apparatus, characterized in that at least one of the two or more materials is left and the other materials are removed by physical means.
する真空成膜装置において、前記基板の周りに配設され
ている構成部品のうち、該基板以外に膜が成膜される部
品の表面を多数の凹凸形状とし、且つ少なくとも該部品
の内部の表面近傍を多孔質にしたことを特徴とする真空
成膜装置。5. A vacuum film forming apparatus for forming a film on a substrate housed in a vacuum container, wherein a film is formed on a component other than the substrate among the components arranged around the substrate. A vacuum film forming apparatus characterized in that the surface of a component has a large number of irregular shapes, and at least the vicinity of the surface inside the component is made porous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2181393A JPH06220618A (en) | 1993-01-14 | 1993-01-14 | Vacuum film forming device and surface treatment of its component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2181393A JPH06220618A (en) | 1993-01-14 | 1993-01-14 | Vacuum film forming device and surface treatment of its component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06220618A true JPH06220618A (en) | 1994-08-09 |
Family
ID=12065507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2181393A Pending JPH06220618A (en) | 1993-01-14 | 1993-01-14 | Vacuum film forming device and surface treatment of its component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06220618A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7648782B2 (en) | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
| US7767268B2 (en) | 2005-09-08 | 2010-08-03 | Tocalo Co., Ltd. | Spray-coated member having an excellent resistance to plasma erosion and method of producing the same |
| US7850864B2 (en) | 2006-03-20 | 2010-12-14 | Tokyo Electron Limited | Plasma treating apparatus and plasma treating method |
| JP2014173595A (en) * | 2013-03-08 | 2014-09-22 | General Electric Co <Ge> | Turbine blade cooling channel formation |
-
1993
- 1993-01-14 JP JP2181393A patent/JPH06220618A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7767268B2 (en) | 2005-09-08 | 2010-08-03 | Tocalo Co., Ltd. | Spray-coated member having an excellent resistance to plasma erosion and method of producing the same |
| US7648782B2 (en) | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
| US7850864B2 (en) | 2006-03-20 | 2010-12-14 | Tokyo Electron Limited | Plasma treating apparatus and plasma treating method |
| JP2014173595A (en) * | 2013-03-08 | 2014-09-22 | General Electric Co <Ge> | Turbine blade cooling channel formation |
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