JPS60234380A - Substrate for solar cell - Google Patents
Substrate for solar cellInfo
- Publication number
- JPS60234380A JPS60234380A JP59089510A JP8951084A JPS60234380A JP S60234380 A JPS60234380 A JP S60234380A JP 59089510 A JP59089510 A JP 59089510A JP 8951084 A JP8951084 A JP 8951084A JP S60234380 A JPS60234380 A JP S60234380A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- stainless steel
- plating
- substrate
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 238000007747 plating Methods 0.000 claims abstract description 35
- 239000010935 stainless steel Substances 0.000 claims abstract description 30
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 30
- 229910052737 gold Inorganic materials 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 8
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 abstract description 7
- 239000002253 acid Substances 0.000 abstract description 6
- 238000005238 degreasing Methods 0.000 abstract description 6
- 238000009713 electroplating Methods 0.000 abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 150000003839 salts Chemical class 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 2
- 230000003213 activating effect Effects 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 238000005097 cold rolling Methods 0.000 abstract 1
- 239000002131 composite material Substances 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 230000001771 impaired effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 8
- 239000010948 rhodium Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 239000010944 silver (metal) Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000734 martensite Inorganic materials 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- WMFZVLIHQVUVGO-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanol Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(O)C1=CC=CC=C1 WMFZVLIHQVUVGO-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000001488 sodium phosphate Substances 0.000 description 2
- 229910000162 sodium phosphate Inorganic materials 0.000 description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-IGMARMGPSA-N nickel-59 Chemical compound [59Ni] PXHVJJICTQNCMI-IGMARMGPSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical group Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- YWFDDXXMOPZFFM-UHFFFAOYSA-H rhodium(3+);trisulfate Chemical compound [Rh+3].[Rh+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O YWFDDXXMOPZFFM-UHFFFAOYSA-H 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
「目的」
この発明は、太陽電池、特にアモルファスシリコン型の
太陽電池用基板に関する。DETAILED DESCRIPTION OF THE INVENTION OBJECT This invention relates to a solar cell, particularly a substrate for an amorphous silicon type solar cell.
「従来の技術」
アモルファスシリコン（以下ａ−１３１と記載する）太
陽電池は基板上に厚さ１μｍ程度のａ−８ｉを被覆して
太陽電池に構成するため、その基板は電池の性能とコス
トの両面に大きな影響を４見る。``Prior art'' Amorphous silicon (hereinafter referred to as A-131) solar cells are constructed by coating A-8I with a thickness of about 1 μm on a substrate, so the substrate is a material that reduces the performance and cost of the cell. I see a big impact on both sides.
そこで太陽電池の基板材料の要件として（１） 物理的
、化学的に安定で耐食性２強度。Therefore, the requirements for solar cell substrate materials are (1) Physically and chemically stable, corrosion resistant 2 strength.
耐熱性、耐久性などに優れている。It has excellent heat resistance and durability.
（２） ａ−８ｉとの密着性がよく、電気的忙低抵抗接
触（オーム性抵抗を示し接触抵抗を示さない）が得られ
ること。(2) It has good adhesion with a-8i and provides low electrical resistance contact (exhibits ohmic resistance and no contact resistance).
（３） 優れた性能のａ−８ｉ膜を得るのに必要な基板
表面を有している８
（４） 実用化が容易でしかも低コスト化が図れる。(3) It has a substrate surface necessary to obtain an a-8i film with excellent performance.8 (4) It is easy to put into practical use and can be made at low cost.
などがあげられる。etc. can be mentioned.
一般に太陽電池用基板材料として金属基板（ステンレス
、アルマイト等）、ガラス基板。Metal substrates (stainless steel, alumite, etc.) and glass substrates are generally used as substrate materials for solar cells.
セラミック基板及び高分子基板（ポリイミド等）などが
考えられるが、上記のような性能が必要とされることか
ら、ステンレスが多く使用される傾向にある。Ceramic substrates and polymer substrates (polyimide, etc.) are conceivable, but since the above-mentioned performance is required, stainless steel tends to be used more often.
ステンレスは耐食性の極めて高い金属材料であシ、これ
は特殊な不働態化皮膜が表面に存在するためであること
は良く知られている。ステンレスの表面に形成されてい
る不働態化皮膜は単純な金属酸化物ではなく、クロムと
鉄の合金によってできたガラスの性質に近い非晶質の皮
膜であシ、シかもこの皮膜は５０Ｘ〜５０Ａという極め
て薄い特殊な皮膜である８この皮膜がステンレス独特の
防錆効果をもたらすのであるが、その反面ａ−Ｅｌｉ太
陽電池には有害でおる。Stainless steel is a metal material with extremely high corrosion resistance, and it is well known that this is due to the presence of a special passivation film on its surface. The passivation film formed on the surface of stainless steel is not a simple metal oxide, but an amorphous film made of an alloy of chromium and iron that has properties similar to glass. This film, which is an extremely thin special film of 50A, provides a rust prevention effect unique to stainless steel, but on the other hand, it is harmful to a-Eli solar cells.
すなわち、この不働態化皮膜は、酸液によって除去して
も水中或いは空気中で再びステンレス表面に形成される
ため、不働態化皮膜が残っているステンレス表面にａ−
８ｉを形成することになる。その結果、ステンレスとａ
−８ｉの間に集中抵抗及び境界抵抗による電力損失が生
じ、甚しい場合には密着不良となる。That is, even if this passivation film is removed with an acid solution, it will be re-formed on the stainless steel surface in water or in the air, so the a-
8i will be formed. As a result, stainless steel and a
-8i, power loss occurs due to concentrated resistance and boundary resistance, and in severe cases, poor adhesion occurs.
と
以上のことから、従来好木されてきたステンレス基板も
ａ−８ｉとの電気的な接続性の点で必ずしも満足のいく
ものではなかった。From the above, the stainless steel substrates that have been used in the past have not always been satisfactory in terms of electrical connectivity with the A-8I.
「構 成」
本発明゛は２以上のようなステンレス基板の欠点を克服
すべく模索研究の結果なされたものであり、厚さ０．０
５．ｕｍ以下のＡｕ、Ａｇ、Ｐｄ、Ｒｈ、Ｐｔ、Ｉｎ又
はこれらの合金の被覆層を備えたステンレス製太陽電池
用基板を提供する。"Structure" The present invention was made as a result of exploratory research to overcome the two or more drawbacks of stainless steel substrates, and has a thickness of 0.0.
5. Provided is a stainless steel solar cell substrate having a coating layer of Au, Ag, Pd, Rh, Pt, In, or an alloy thereof having a thickness of 100 um or less.
このような被覆層を備えたステンレス基板の太陽電池へ
の適用を考えるに、一般に電気めっき等によ多形成され
た金属層には水素、添加剤。When considering the application of a stainless steel substrate with such a coating layer to a solar cell, hydrogen and additives are generally added to the metal layer formed by electroplating or the like.
塩類、水あるいはめつき液中の懸濁物等が共析するので
、熱がかかるとこの共析物がめつき層から放散しようと
する。Salts, water, or suspended matter in the plating solution eutectoid, and when heat is applied, this eutectoid tends to diffuse from the plating layer.
ところがａ−８ｉの形成時には基板が２５０℃〜６５０
℃に昇温し雰囲気も低圧々ので、前記のような共析物か
らのガスの放出が起り、それに伴ってめっき膜のふくれ
や微小孔が生じ必然的にａ−８ｉ層の性能に悪影響を与
えると考えるのが普通である。However, when forming a-8i, the temperature of the substrate was 250°C to 650°C.
As the temperature rises to ℃ and the atmosphere is at low pressure, gas is released from the eutectoid as described above, which causes blistering and micropores in the plating film, which inevitably has a negative impact on the performance of the a-8i layer. It is common to think of it as giving.
しかしながら１本発明においてはこのような常識を打破
し、０．０５μｍ以下の被覆層を設けることによシ、共
析物からのガスの放出を押えて欠陥の発生を抑制し、し
かもステンレス表面の不動体化皮膜による電気的接続の
障害を防止することができる優れた基板を見出した。However, in the present invention, we break through this common sense and provide a coating layer with a thickness of 0.05 μm or less, thereby suppressing the release of gas from the eutectoid and suppressing the occurrence of defects. We have discovered an excellent substrate that can prevent failure of electrical connections due to a passivation film.
ステンレス鋼板には、各種のものが製造販売されてお９
９オーステナイト系、フェライト系。There are 9 different types of stainless steel plates manufactured and sold.
9 Austenitic, ferritic.
マルテンサイト系、析出硬化系に分類されている。現在
ａ−Ｅｌｉ太陽電池用ステンレス基板には。It is classified into martensitic type and precipitation hardening type. Currently, stainless steel substrates for a-Eli solar cells are used.
オーステナイト系の５ＵＳ３０４が比較的一般に用いら
れているが、目的と用途によりフェライト系、マルテン
サイト系、析出硬化系ステンレス鋼板から選択して、太
陽電池用基板として使用できる。Although austenitic 5US304 is relatively commonly used, it can be selected from ferritic, martensitic, and precipitation hardened stainless steel sheets depending on the purpose and application and used as a solar cell substrate.
基板用のステンレス鋼は表面粗さが小さくかつ均一でお
ること、さらにビットやスクラッチなどの微細欠陥が極
力少ないことが必要ゴあるため、冷間圧延２機械研摩あ
るいは電解複合研摩等によシ表面を調整して使用する。Stainless steel for substrates must have a small and uniform surface roughness, and must have as few microscopic defects as bits and scratches as possible. Adjust and use.
こうして所望の表面性状に調整されたステンレス鋼にア
ルカリ脱脂、電解脱脂、さらに酸による活性化処理等の
電気めっきに必要々前処理を行う。ステンレス鋼への電
気めっきの前処理については公知でおり１本発明におい
ては特に制限されない。The stainless steel thus adjusted to have the desired surface properties is subjected to necessary pretreatments for electroplating, such as alkaline degreasing, electrolytic degreasing, and activation treatment with acid. Pretreatment for electroplating stainless steel is well known and is not particularly limited in the present invention.
この後、ステンレス鋼はＡｕ、Ａｇ 、Ｐｄ、Ｒｈ、Ｐ
ｔ、Ｉｎ又はこれらの合金を００５μｍ以下の厚さに電
気めっきする８
Ｑ、０５μｍよりも厚いと水素、添加剤、塩類。After this, the stainless steel is Au, Ag, Pd, Rh, P
Electroplating T, In or their alloys to a thickness of 0.05 μm or less. 8 Q. If thicker than 0.5 μm, hydrogen, additives, salts.
水等の不純物の共析が起り健全なａ−８ｉの形成が阻害
される。Co-deposition of impurities such as water occurs and formation of healthy a-8i is inhibited.
０．０５μｍ以下のめつき厚であると不純物の蓄積も少
なく２層自体著しく薄いため基板の昇温時にガスの放出
が少なく、欠陥が発生しない。When the plating thickness is 0.05 .mu.m or less, there is little accumulation of impurities and the two layers themselves are extremely thin, so less gas is released when the substrate is heated, and no defects occur.
実用上のめつき厚として好ましくはｆｌ、００５μｍ〜
０．０１μｍである。これ以下であると皮膜が著しく不
均一で多孔質であるため不働態膜に覆われる部分が多く
なり太陽電池用基板としての効果を発揮しない。Practical plating thickness is preferably fl, 005 μm ~
It is 0.01 μm. If it is less than this, the film will be extremely non-uniform and porous, so that a large portion will be covered with the passive film and will not be effective as a solar cell substrate.
めっき条件に特に制限がなく、いずれも公知のめつき浴
を用いて実施できる。There are no particular restrictions on the plating conditions, and any known plating bath can be used.
例えば、Ａｕ及びＡｇけシアン浴、中性浴。For example, Au and Ag cyanide baths, neutral baths.
酸性浴等、Ｐａは塩化パラジウム浴等、Ｒｈはりん酸ロ
ジウム浴、硫酸ロジウム浴等、ｐｔは塩化白金浴等、Ｉ
ｎは硫醍浴、シアン浴、ホウフッ化浴等を用いてめっき
を行う。Acidic bath etc., Pa is palladium chloride bath etc., Rh is rhodium phosphate bath, rhodium sulfate bath etc., pt is platinum chloride bath etc.
Plating is performed using a sulfur bath, a cyanide bath, a borofluoride bath, or the like.
必要めっき厚が極めて薄いため、無光沢浴でもａ−８ｉ
形成に支障をきたす程に表面が荒れることはない、また
光沢剤を添加しても共析による害もない。Since the required plating thickness is extremely thin, even a matte bath can achieve a-8i.
The surface will not become rough enough to interfere with formation, and even if a brightening agent is added, there will be no harm caused by eutectoid.
尚、ステンレス鋼にめっきする場合は、密着性を向上さ
せるためＮ１等のストライクめっきを予め施すこともで
きる。このようなＮ１等のストライクめっきも本発明に
包含されている。When plating stainless steel, strike plating such as N1 may be applied in advance to improve adhesion. Strike plating such as N1 is also included in the present invention.
ただし、Ｎｉ等のストライクめっきを施す場合も前述の
理由により、その上のＡｕ 、Ａ［！； 、 Ｐ（１、
Ｒｈ 。However, when applying strike plating such as Ni, Au, A [! ; , P(1,
Rh.
ｐｔ、工ｎ又はこれらの合金めっきとの合計の厚みが０
．０５μｍ以下になるようにする。The total thickness of PT, N or these alloy plating is 0
．． The thickness should be 0.05 μm or less.
「効 果」
本発明のステンレス鋼上にＡｕ、Ａｇ、Ｐｄ、Ｒｈ、Ｐ
ｔ。"Effect" Au, Ag, Pd, Rh, P on the stainless steel of the present invention.
t.
Ｉｎ又はこれらの合金めっきを施した太陽電池用基板は
表面が貴金属によって被覆されていることにより、ａ−
Ｅｌｉとの接着性及び電気的接続性が従来のステンレス
基板よりもはるかに優れており、ａ−８ｉ太陽電池の変
換効率を向上させることができる。Solar cell substrates plated with In or their alloys have a-
Adhesion and electrical connectivity with Eli are far superior to conventional stainless steel substrates, and the conversion efficiency of A-8I solar cells can be improved.
また、貴金属めっき品ではあるがその厚みが０．０５μ
ｍ以下であるので、実用的めっきの生産コストは数ミク
ロンの厚みのＮｉ、Ｏｕ等のめっきと同程度であり、極
めて経済的にａ−９ｉ太陽電池の性能を向上させること
ができる。Also, although it is a precious metal plated product, its thickness is 0.05 μm.
m or less, the production cost of practical plating is comparable to plating of Ni, Ou, etc. with a thickness of several microns, and the performance of the a-9i solar cell can be improved extremely economically.
「実施例」
（１１０，１，ｔの５ＵＳ３０４機械研摩材（Ｒｍａｘ
α０７μｌ？ｌ）をアルカリ脱脂、電解脱脂、酸による
活性化処理を施しだ後、以下に示すめっき浴及びめっき
条件によりＡｕ、Ａｇ、Ｐｄ、Ｒｈ、Ｐｔ、Ｉｎの各め
っきを施した、
［Ａｕめつき〕
浴組成 金シアンカリ ５９／ｌ
スルフアミンニツケル ５９／Ｌ
り エ ン 酸 ９０ ｆ／ｌ
クエン酸ナトリウム ９０ ｆ／ｌ
めつき条件 ｐＨ３，５
浴 温 ５０℃
陰極電流密度 ２Ａ／ｄｆｆＩＩ
ＣＡｇめつき〕
浴組成 シアン化銀 ３６ｙ／ｌ
シアノ化カリウム ６０ ｙ／を
炭酸カリウム ４５ｔ／ｌ
めつき条件 浴 温 ３０℃
陰極電流密度 Ｉ Ａ／ｄｎ／
Ｃｐａめっき〕
浴 組 成 塩化第一パラジウム ３７ｔ／を第二りん
酸ナトリウム １００ｆ／を
第二り人厳アンモニウム ２０ｆ／を
安息香酸 ２５ｒ／ｌ
めつき条件 温 度 ５０℃
陰極電流密度 ０．２Ａ／ｄｉ
〔Ｒｈめっき〕
浴 組 成 りん酸ロジウム ４？／ｌリ ん 酸 （
、Ｑｆ／ｌ
めっき条件 温 度 ４５℃
陰極電流密度 ３Ａ／ｄｍ’
［ｐｔめつき］
浴組成 塩化白金酸 ４ｙ／ｌ
りん酸アンモニウム ２０９／ｌ
りん酸ナトリウム １００ｆ／７
めつき条件 ｐＨ６，９
温 度 ８０℃
陰極電流密度 Ｉ Ａ／ｄｒｒ？
〔工ｎめつき〕
浴 組 成 硫酸インジウム ６０ｆ／Ｌ硫酸ナトリウ
ム １（１／／−
めつき条件 ｐＨ２，０〜２．７
温 度 ３０℃
陰極電流密度 ２Ａ／ｄｉ
次に各めっきを施したステンレス鋼基板に■ＴＯ／ｎ１
ｐ／基板セルを形成してショート特性及び変換効率を測
定した。“Example” (5US304 mechanical abrasive of 110,1,t (Rmax
α07μl? 1) was subjected to alkaline degreasing, electrolytic degreasing, and acid activation treatment, and then each plating of Au, Ag, Pd, Rh, Pt, and In was applied using the plating bath and plating conditions shown below. ] Bath composition Gold cyankaline 59/l Sulfamine nickel 59/L Rienoic acid 90 f/l Sodium citrate 90 f/l Plating conditions pH 3,5 Bath temperature 50°C Cathode current density 2 A/dffII CAg plating] Bath composition Silver cyanide 36 y/l Potassium cyanide 60 y/l and potassium carbonate 45 t/l Plating conditions Bath temperature 30°C Cathode current density I A/dn/Cpa plating] Bath composition Palladium chloride 37 t/l Sodium phosphate 100f/20% ammonium 20f/benzoic acid 25r/l Plating conditions Temperature 50℃ Cathode current density 0.2A/di [Rh plating] Bath composition Rhodium phosphate 4? /l phosphoric acid (
, Qf/l Plating conditions Temperature 45℃ Cathode current density 3A/dm' [PT plating] Bath composition Chloroplatinic acid 4y/l Ammonium phosphate 209/l Sodium phosphate 100f/7 Plating conditions pH 6,9 Temperature 80℃ Cathode current density I A/drr? [Engineering plating] Bath composition Indium sulfate 60 f/L Sodium sulfate 1 (1//-) Plating conditions pH 2.0 to 2.7 Temperature 30°C Cathode current density 2 A/di Next, each plated stainless steel ■TO/n1 on steel substrate
A p/substrate cell was formed and short characteristics and conversion efficiency were measured.
第１表にみる通り１本発明の太陽電池基板のショー）％
性を示すセルの割合はいずれもステンレスの従来品およ
び従来の厚みのめっき材よりも少なく、また変換効率も
いずれも勝っている。As shown in Table 1, 1)% of the solar cell substrate of the present invention
The percentage of cells showing properties is lower than that of conventional stainless steel products and plating materials of conventional thickness, and the conversion efficiency is also superior in both cases.
なお、ショート特性を示すセルの割合及び変換効率は比
較材（ステンレス）を１．００とした本発明基板の比を
示す（本発明材／従来材）。The percentage of cells exhibiting short-circuit characteristics and the conversion efficiency are the ratio of the substrate of the present invention (inventive material/conventional material), with the comparison material (stainless steel) being 1.00.
第１表
昭和５９年１１月２２日
特許庁長官 志賀 学 殿
１、事件の表示
昭和５９年特許願第 ８９５１０ 号
２ 発明の名称
太陽電池用基板
３ 補正をする者
事件との関係 特許出願人
住 所 東京都港区虎ノ門二丁目１０番１号名 称 日
本鉱業株式会社
代表者 笠 原 幸 雄
４代理人
〒１０５ 電話５８２−２１１１
住 所 東京都港区虎ノ門二丁目１０番１号２補正の内
容
（リ 特許請求の範囲を別紙の通シに改めます。Table 1: November 22, 1980 Manabu Shiga, Commissioner of the Patent Office 1. Indication of the case 1989 Patent Application No. 89510 2. Name of the invention Solar cell substrate 3. Person making the amendment Relationship to the case Patent applicant residence Address: 2-10-1 Toranomon, Minato-ku, Tokyo Name: Japan Mining Co., Ltd. Representative: Yukio Kasahara 4 Agent: 105 Telephone: 582-2111 Address: 2-10-1 Toranomon, Minato-ku, Tokyo Contents of the 2nd Amendment (The scope of the patent claims will be revised to the attached document.
（２） 明細書第４頁第２行、第６頁第３行、第７頁１
４行及び１８行、第８頁第１３行の「Ｉｎ」を削除しま
す。(2) Specification page 4, line 2, page 6, line 3, page 7, line 1
Delete "In" on lines 4 and 18, page 8, line 13.
（３） 明細書第７頁第２行〜第５行の「、Ｉｎは硫酸
浴、シアン浴、ホウフッ化浴等」を削除します。(3) Delete "In means sulfuric acid bath, cyanide bath, borofluoride bath, etc." from lines 2 to 5 on page 7 of the specification.
（４） 明細書第１０頁の第８行〜第１３行を全て削除
します。(4) Delete all lines 8 to 13 on page 10 of the statement.
（５） 明細書第１１頁の第１表を次頁のごとく補正し
ます。(5) Table 1 on page 11 of the specification is amended as shown on the next page.
（以下余白）
第１表
別紙
特許請求の範囲
（１１厚さ０．０５μｍ以下のＡｕ 、Ａｇ 、 Ｐｄ
＋ Ｒｈ 、 Ｐｔ又はこれらの合金の被覆層を備え
たステンレス製太陽電池用基板
（２） ステンレスに予めＮ１等のストライクめっき層
を施した特許請求の範囲第１項記載の太陽電池用基板。(Margin below) Table 1 Appendix Claims (11 Au, Ag, Pd with a thickness of 0.05 μm or less
+ Stainless steel solar cell substrate (2) comprising a coating layer of Rh, Pt, or an alloy thereof The solar cell substrate according to claim 1, wherein a strike plating layer of N1 or the like is applied to stainless steel in advance.
Claims (2)
ｈ、Ｐｔ、Ｉｎ又はこれらの合金の被覆層を備えたステ
ンレス製太陽電池用基板。(1) Au, Ag, Pd, R with a thickness of 0.05 μm or less
A stainless steel solar cell substrate comprising a coating layer of h, Pt, In, or an alloy thereof.
を施した特許請求の範囲第１項記載の太陽電池用基板。(2) The solar cell substrate according to claim 1, wherein the stainless steel is coated with a strike plating layer of N1 or the like in advance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59089510A JPS60234380A (en) | 1984-05-07 | 1984-05-07 | Substrate for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59089510A JPS60234380A (en) | 1984-05-07 | 1984-05-07 | Substrate for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60234380A true JPS60234380A (en) | 1985-11-21 |
Family
ID=13972778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59089510A Pending JPS60234380A (en) | 1984-05-07 | 1984-05-07 | Substrate for solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60234380A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009055055A (en) * | 2002-12-27 | 2009-03-12 | Kyushu Hitachi Maxell Ltd | Method of manufacturing semiconductor device |
| JP2013042187A (en) * | 2012-11-29 | 2013-02-28 | Hitachi Maxell Ltd | Semiconductor device |
| JP2013058816A (en) * | 2012-12-28 | 2013-03-28 | Hitachi Maxell Ltd | Intermediate component for semiconductor device and manufacturing method of the same |
| JP2013168686A (en) * | 2013-06-03 | 2013-08-29 | Hitachi Maxell Ltd | Semiconductor device and semiconductor device manufacturing method |
| JP2015233166A (en) * | 2015-10-01 | 2015-12-24 | 日立マクセル株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2017005261A (en) * | 2016-08-22 | 2017-01-05 | 日立マクセル株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2017118131A (en) * | 2017-02-13 | 2017-06-29 | 日立マクセル株式会社 | Intermediate component for semiconductor device and manufacturing method of the same, and semiconductor device and manufacturing method of the same |
| JP2017195414A (en) * | 2017-07-20 | 2017-10-26 | 日立マクセル株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2018029214A (en) * | 2017-11-24 | 2018-02-22 | マクセルホールディングス株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2018160707A (en) * | 2018-07-23 | 2018-10-11 | マクセルホールディングス株式会社 | Semiconductor device and semiconductor device manufacturing method |
-
1984
- 1984-05-07 JP JP59089510A patent/JPS60234380A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009055055A (en) * | 2002-12-27 | 2009-03-12 | Kyushu Hitachi Maxell Ltd | Method of manufacturing semiconductor device |
| JP2011216921A (en) * | 2002-12-27 | 2011-10-27 | Kyushu Hitachi Maxell Ltd | Semiconductor device and method of manufacturing the same |
| JP2013042187A (en) * | 2012-11-29 | 2013-02-28 | Hitachi Maxell Ltd | Semiconductor device |
| JP2013058816A (en) * | 2012-12-28 | 2013-03-28 | Hitachi Maxell Ltd | Intermediate component for semiconductor device and manufacturing method of the same |
| JP2013168686A (en) * | 2013-06-03 | 2013-08-29 | Hitachi Maxell Ltd | Semiconductor device and semiconductor device manufacturing method |
| JP2015233166A (en) * | 2015-10-01 | 2015-12-24 | 日立マクセル株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2017005261A (en) * | 2016-08-22 | 2017-01-05 | 日立マクセル株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2017118131A (en) * | 2017-02-13 | 2017-06-29 | 日立マクセル株式会社 | Intermediate component for semiconductor device and manufacturing method of the same, and semiconductor device and manufacturing method of the same |
| JP2017195414A (en) * | 2017-07-20 | 2017-10-26 | 日立マクセル株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2018029214A (en) * | 2017-11-24 | 2018-02-22 | マクセルホールディングス株式会社 | Semiconductor device and semiconductor device manufacturing method |
| JP2018160707A (en) * | 2018-07-23 | 2018-10-11 | マクセルホールディングス株式会社 | Semiconductor device and semiconductor device manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100577889C (en) | A kind of thin belt continuous casting crystal roller surface electroplating method and electroplate liquid thereof | |
| JPS60234380A (en) | Substrate for solar cell | |
| CN101710620A (en) | Proton exchange membrane fuel cell stainless steel bipolar plate and modification method thereof | |
| CN112376098B (en) | Method for electroplating molybdenum-copper alloy surface | |
| CN113122845A (en) | Preparation method of aluminum alloy metal plated part | |
| JPH0277585A (en) | Palladium/nickel alloy layer as intermediate between metal base material having no or almost no corrosion resistance | |
| CN107190288B (en) | Preparation method of HEDP copper-plated pore-free thin layer | |
| JP2009099548A (en) | Silver-clad composite material for movable contact and its manufacturing method | |
| US3503799A (en) | Method of preparing an electrode coated with a platinum metal | |
| JP2004134276A (en) | Material for solid polymer type fuel cell, and its manufacturing method | |
| US4167459A (en) | Electroplating with Ni-Cu alloy | |
| JP2002075393A (en) | Separator for fuel cell and its manufacturing method | |
| JPS6123789A (en) | Method for plating stainless steel with noble metal | |
| JP3092929B2 (en) | Ni, Cu coated stainless steel sheet and method for producing the same | |
| JP4040008B2 (en) | Metal separator for fuel cell and manufacturing method thereof | |
| JP4558823B2 (en) | Silver-coated composite material for movable contact and method for producing the same | |
| JPS61204393A (en) | Production of nickel coated stainless steel strip | |
| CN212293784U (en) | Plating layer structure of steel part palladium-plated steel | |
| CN111334753B (en) | Method for plating rhodium on surface of steel strip | |
| CN212925173U (en) | Plating layer structure of palladium-plated steel of zinc alloy die casting | |
| JPS6218771A (en) | Material plate for solar cell base | |
| JP2005206904A (en) | METHOD OF PRODUCING Ni-W ALLOY FILM | |
| CN112760686B (en) | Cathode electrolysis activating solution, preparation method and application thereof | |
| CN212925174U (en) | Coating structure for plating rose gold on zinc alloy die casting | |
| JPS63282293A (en) | Electroplating method for stainless steel sheet with zn, ni, or cu |