JPS60234352A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60234352A
JPS60234352A JP59089425A JP8942584A JPS60234352A JP S60234352 A JPS60234352 A JP S60234352A JP 59089425 A JP59089425 A JP 59089425A JP 8942584 A JP8942584 A JP 8942584A JP S60234352 A JPS60234352 A JP S60234352A
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor chip
semiconductor device
terminal
corrosion resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59089425A
Other languages
English (en)
Inventor
Tatsuo Itagaki
板垣　達夫
Akira Suzuki
明 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59089425A priority Critical patent/JPS60234352A/ja
Publication of JPS60234352A publication Critical patent/JPS60234352A/ja
Pending legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［技術分野］ 本発明は、半導体装置に係り、特に、半導体装置の腐蝕
防止技術に適用して有効な技術に関するものである。
［背景技術］ 半導体チップの外部端子とインナーリードとをボンディ
ングワイヤで接続した後に、それらを封止部（樹脂部）
で封止してなる半導体装置は、熱膨張率の違いでインナ
ーリードと封止部とに生じる微小な間隙から、外部端子
に不要な水滴が搬送されるという現象がある。
半導体チップの外部端子は、その内部集積回路の配線と
同一の金属材料、例えば、アルミニウムにより形成され
ており、前記不要な水滴によって断線等の電気的特性を
劣化させる腐蝕が生じる。
そこで、アルミニウムと耐腐蝕性の金属材料例えばニッ
ケルとの合金で外部端子を形成することが考えられる。
しかしながら、かかる技術における検討の結果、本発明
者は、半導体チップの形成工程では、外部端子と内部集
積回路の配線とが同一工程で形成されるので、耐腐蝕性
の金属材料の導入による配線抵抗の増加等、半導体装置
の電気的特性を劣化させるという問題点を見い出した。
また１本発明者は、外部端子を耐腐蝕性の良好な金で覆
うことについて考え検討したが、アルミニウムと金との
合金化は好ましくなく、それらの介在部に他の金属を介
在させ積層化する必要がある（たとえば、特開昭５４−
１２８２８０号公報など）ので、製造工程の増加、材料
費の増加、設備の改善等、著しくコスト高になるとして
いる。
さらに、積層化した場合は、水滴の浸入を防止するため
に、それぞれの金属層の被着性を良好にする必要が生じ
る。
〔発明の目的］ 本発明の目的は、耐腐蝕性を向上することが可能な技術
手段を提供することにある。
本発明の他の目的は、半導体装置において、半導体チッ
プの集積回路の配線抵抗値に著しい影響を及ぼすことな
く、耐腐蝕性を向上することが可能な技術手段を提供す
ることにある。
本発明の他の目的は、半導体装置において、著しいコス
トの増加をすることがなく、耐腐蝕性を向上することが
可能な技術手段を提供することにある。
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述及び添付図面によって明らかになるであろ
う。
［発明の概要コ 本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、下記のとおりである。
すなわち、半導体チップの少なくとも外部端子の表面部
に、耐腐蝕性の金属材料で合金化された領域を設けるこ
とにより、半導体チップの集積回路の配Ｍ抵抗値に著し
い影響を及ぼすことなく、半導体装置の耐腐蝕性を向上
することができる。
以下、本発明の構成について、実施例とともに説明する
。
本実施例は、本発明をフラットパッケージ型半導体装置
に適用したものである。
［実施例］ 第１図は、本発明の詳細な説明するための半導体装置の
概略斜視図、第２図は、第１図のｎ　−■切断線におけ
る断面図である。
なお、実施例の全回において、同一機能を有するものは
同一符号を付け、そのくり返しの説明は省略する。
第１図及び第２図において、１はタブ部であり、半導体
チップを搭載するためのものである。
２はリードであり、半導体チップと外部装置とを電気的
に接続するためのものである。２Ａはインナーリードで
あり、２Ｂはアウターリードである。
３はタブ部１に搭載されて設けられた半導体チップであ
り、論理機能、メモリ機能等を有するものである。
４はその一端が半導体チップ３の外部端子（図示してい
ない）に接続されその他端がインナーリード２Ａに接続
されて設けられたボンディングワイヤであり、それらを
電気的に接続するためのものである。
５はタブ部工、インナーリード２Ａ、半導体チップ３及
びボンディングワイヤ４を封止して設けられた樹脂から
なる封止部であり、主として半導体チップ３を外部雰囲
気及び外部応力から保護するためのものである。
次に、半導体チップに設けられた外部端子について、具
体的に説明する。
第３図は、外部端子部分における半導体装置の要部断面
図である。
第３図において、６は半導体基板、７は半導体素子（図
示していない）間を電気的に分離するフィールド絶縁膜
、８は半導体素子とその上部に設けられる導電層とを電
気的に分離する絶縁膜である。
９は半導体チップ３の製造工程における第１層目の配線
形成工程により絶縁膜８上部に設けられた導電層であり
、内部集積回路の配線９Ａと、内部集積回路と外部機器
との電気信号を入出力するための外部端子９Ｂとを構成
するためのものである。この導電層９は、低抵抗値を有
し電気信号の伝播速度を向上するために、例えば、アル
ミニウム又はエレクトロマイグレーションを防止するア
ルミニウムシリコンの金属材料により形成すればよい。
１０は導電層９を覆うように設けられた絶縁膜であり、
主として外部雰囲気から導電層９を保護するためのもの
である。
１０Ａは外部端子９Ｂ上部の絶縁膜１０を選択的に除去
して設けられた開口部であり、外部端子９Ａとボンディ
ングワイヤ４とを電気的に接続するためのものである。
１１は開口部１０Ａから露出する外部端子９Ｂ上部に被
着して設けられた金属層であり、外部端子９Ｂの耐腐蝕
性を向上するためのものである。
この金属層１１は、耐腐蝕性を向上するように、パラジ
ウム、金、ニッケル、マンガン等を用いればよい。
１１Ａは外部端子９Ｂの表面部にその他の金属材料によ
り合金化されて設けられた合金化領域であり、耐腐蝕性
を向上するためのものである。合金化領域１１Ａは、前
記金属層１１を形成し、例えば、４００［°Ｃ］程度の
熱処理を施して金属層１１の一部を外部端子９Ａの表面
部に拡散して形成されたものであり、前記金属層１１の
あるないにかかわらず、例えば、０．０５　［μｍ］程
度の深さで形成すれは、充分に耐腐蝕性を向上すること
ができる。
また、第４図及び第５図に示すように、前記金属層１１
を完全に合金化領域１１Ｂ、ＩＩＧに可変させてもよい
。
第４図は、外部端子９Ｂの表面部に合金化領域１１Ｂを
形成した例、第５図は、外部端子９Ｂの略全部に合金化
領域１１Ｃを形成した例であり、どちらも前記第３図に
示す例に比べ、ボンディングワイヤ４を接続する際のボ
ンダビリティが良好である。
また、第４図に示す例は、第５図に示す例に比べ、合金
化による抵抗値の増加は小さくなっている。
［効果］ 以上説明したように、本願において開示された新規な技
術手段によれば、以下に述るような効果を得ることがで
きる。
（１）、半導体チップの少なくとも外部端子の表面部に
、耐腐蝕性の金属材料で合金化された領域を設けること
により、その内部集積回路の配線抵抗値に著しい影響を
及ぼすことなく、半導体装置の耐腐蝕性を向上すること
ができる。
（２）、半導体チップの少なくとも外部端子の表面部に
、耐腐蝕性の金属材料で合金化された領域を設けること
により、積層化する場合に比べ、製造工程の増加、材料
費の増加、設備の改善等、著しくコスト高をすることな
く、半導体装置の耐腐蝕性を向上することができる。
（３）、半導体チップの少なくとも外部端子の表面部に
、耐腐蝕性の金属材料で合金化された領域を設けること
により、積層化することによって生じるそれぞれの金属
層の被着性を考慮する必要がなく水滴の浸入がないので
、半導体装置の耐腐蝕性を向上することができる。
以上、本発明者によってなされた発明を前記実施例にも
とづき具体的に説明したが、本発明は、前記実施例に限
定されるものではなく、その要旨を逸脱しない範囲にお
いて、種々変形し得ることは勿論である。
【図面の簡単な説明】
第１図は、本発明の詳細な説明するための半導体装置の
概略斜視図、 第２図は、第１図の■−■切断線における断面図、 第３図乃至第５図は、外部端子部分における半導体装置
の要部断面図である。 図中、１・・・タブ部、２　・リード、２Ａ・インナー
リード、２Ｂ・・アウターリード、３・・半導体チップ
、４・・・ボンディングワイヤ、５　封止部、６・・半
導体基板、７・・フィールド絶縁膜、８．ｌＯ・・・絶
縁膜、９・・・導電層、９Ａ・・・配線、９Ｂ・・・外
部端子、ＩＯＡ・・・開口部、１１・・・金属層、ＩＩ
Ａ。 １１Ｂ、ＩＩＣ・・・合金化領域である。 第　１　図 第　２　図 第　３　図 第　４　図 ○ 第　Ｄ　図

Claims (1)

  1. 【特許請求の範囲】 １、その内部集積回路に使用される配線と同一の第１の
    金属材料で形成された外部端子を有する半導体チップが
    、封止部により封止されてなる半導体装置であって、少
    なくとも前記外部端子の表面部に、その他の第２の金属
    材料により合金化された領域を具備してなることを特徴
    とする半導体装置。 ２、前記合金化された領域は、耐腐蝕性を向上するため
    のものであることを特徴とする特許請求の範囲第１項記
    載の半導体装置。　 ３、前記第１の金属材料は、アルミニウム又はその合金
    からなり、前記第２の金属材料は、パラジウム、金、ニ
    ッケル、マンガン等からなることを特徴とする特許請求
    の範囲第１項又は第２項記載の半導体装置。
JP59089425A 1984-05-07 1984-05-07 半導体装置 Pending JPS60234352A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59089425A JPS60234352A (ja) 1984-05-07 1984-05-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59089425A JPS60234352A (ja) 1984-05-07 1984-05-07 半導体装置

Publications (1)

Publication Number Publication Date
JPS60234352A true JPS60234352A (ja) 1985-11-21

Family

ID=13970302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59089425A Pending JPS60234352A (ja) 1984-05-07 1984-05-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS60234352A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235212A (en) * 1988-03-18 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor device having a mechanical buffer
EP2273542A3 (en) * 2001-12-14 2011-10-26 STMicroelectronics S.r.l. Semiconductor electronic device and method of manufacturing thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235212A (en) * 1988-03-18 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor device having a mechanical buffer
EP2273542A3 (en) * 2001-12-14 2011-10-26 STMicroelectronics S.r.l. Semiconductor electronic device and method of manufacturing thereof

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