JPS60225485A - Interruptor - Google Patents

Interruptor

Info

Publication number
JPS60225485A
JPS60225485A JP59082221A JP8222184A JPS60225485A JP S60225485 A JPS60225485 A JP S60225485A JP 59082221 A JP59082221 A JP 59082221A JP 8222184 A JP8222184 A JP 8222184A JP S60225485 A JPS60225485 A JP S60225485A
Authority
JP
Japan
Prior art keywords
light
lens
elements
light emitting
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59082221A
Other languages
Japanese (ja)
Inventor
Kazuo Yamanaka
山中　一雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59082221A priority Critical patent/JPS60225485A/en
Publication of JPS60225485A publication Critical patent/JPS60225485A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To form the titled device of reflection type inexpensive and thin by a method wherein light emitting elements and light receiving elements are integrally sealed with a photo-permeable resin in which lenses have beeen formed, so that the optical axis of each lens may not present even with the optical axis of each element. CONSTITUTION:The light emitting elements 1 and the light receiving elements 2 are alternately mounted on a lead frame 9 and bonded with wires. Thereafter, the light emitting and light receiving elements are sealed with the photo-permeable resin 8. At this time, a lens with the optical axis out of agreement with the optical axis of the element is formed on the surface of the photo-permeable resin opposed to the element surface. The intensity of light radiated out of the light emitting element is stronger toward the lens, and the light reflected on a reflector 11 becomes incident to the light receiving element with sensitivity enhanced in the direction of a lens. Since the light emitting elements and light receiving elements are integrally sealed with a photo-permeable resin, grooves 12 are provided between the former elements so as to prevent the direct interference of these elements. Then, the whole is housed in a light shielding case 13 fitted to the resin-sealed outer shape into a reflection type interruptor.

Description

【発明の詳細な説明】 （技術分野） 本発明は反射型フォトインタラプタに関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a reflective photointerrupter.

（従来技術） 従来のインタラプタの斜視図を第１図に、その断面図を
第２図に示す。(Prior Art) A perspective view of a conventional interrupter is shown in FIG. 1, and a sectional view thereof is shown in FIG. 2.

従来、インタラプタは、素子光軸とレンズ光軸を一致さ
せた発光装置４と受光索子５を別々に組立て透光性樹脂
にて各々を樹脂封止し、その後し中光性の樹脂にて形成
されたケース３の内に発光装置と受光装置を各装置の光
軸が交叉する様にケース内に納め固定している。Conventionally, an interrupter is constructed by separately assembling a light emitting device 4 and a light receiving cable 5 in which the element optical axis and lens optical axis are aligned, sealing each with a translucent resin, and then sealing them with a medium-luminescent resin. A light emitting device and a light receiving device are housed and fixed in the formed case 3 so that the optical axes of each device intersect.

（発明が解決しようとする問題点） 上述の様に、従来は発光装置と受光装置を別々にケース
に納め固定する為非常に工数がかがシ高価なものになっ
ている。(Problems to be Solved by the Invention) As described above, conventionally, the light emitting device and the light receiving device are housed and fixed separately in a case, which requires a lot of man-hours and is expensive.

また、外部端子７が面状になるので外形が厚く、実装面
積が広くなシ、かつ実装時に多大な工数を要する。Furthermore, since the external terminal 7 is planar, it has a thick outer shape, requires a large mounting area, and requires a large number of man-hours for mounting.

（問題点を解決する為の手段） 本発明は上記問題点を解消し、安価で薄型の反射属イン
タラプタを提供するものである。(Means for Solving the Problems) The present invention solves the above problems and provides an inexpensive and thin reflective interrupter.

本発明によれば、反射属インタラプタにおいて、その発
光素子と受光素子を同一リード７レームの同一平面上に
載置し、各々の素子に対してレンズを形成した透光性樹
脂で一体に封止し、かつ各しンズの光軸が各素子の光軸
と同一線上にないことを特徴とする反射属インタ２ブタ
が得られる。According to the present invention, in a reflective interrupter, the light-emitting element and the light-receiving element are mounted on the same plane of the same lead 7 frame, and each element is integrally sealed with a transparent resin having a lens formed thereon. However, there is obtained a reflective intermetallic lens characterized in that the optical axis of each lens is not on the same line as the optical axis of each element.

（実施例） 以下、本発明を実施例によυ説明する。第３図は組立説
明図である。リードフレーム９に発光素子１と受光素子
２を交互にマウントを行ない、ワイヤーボンディングを
行なう。その後、透光性樹脂８にて発光素子と、受光素
子とを一体に封止する。この時素子表面と相対する透光
性樹脂の面に素子光軸左党軸をずらしたレンズを形成し
てあり、発光素子から放射され九先の強度はレンズ方向
へ強くなっておシ、反射物体１１で反射された光は同様
にレンズ方向に感度を高くし丸受光素子に入射する様に
なっている。透光性樹脂で一体封止しているので直接発
光素子と受光素子が干渉しない様に発光素子間に溝１２
を設け、樹脂封止された外形とハメアイにしたしゃ光性
のケース１３に納めて反射属インタラプタとする。(Examples) The present invention will be explained below with reference to Examples. FIG. 3 is an explanatory diagram of assembly. The light emitting elements 1 and the light receiving elements 2 are mounted alternately on the lead frame 9, and wire bonding is performed. Thereafter, the light-emitting element and the light-receiving element are integrally sealed with a transparent resin 8. At this time, a lens with the optical axis of the element shifted to the left is formed on the surface of the translucent resin facing the element surface, and the intensity of the light emitted from the light emitting element becomes stronger in the direction of the lens. Similarly, the light reflected by the lens 11 is made to have higher sensitivity in the direction of the lens and enters the circular light receiving element. Since they are integrally sealed with a translucent resin, there is a groove 12 between the light emitting elements to prevent direct interference between the light emitting element and the light receiving element.
A reflective interrupter is provided and housed in a light-shielding case 13 fitted with a resin-sealed outer shape.

（発明の効果） この様に本発明によれば、従来に比較し安価に出来る。(Effect of the invention) As described above, according to the present invention, the cost can be reduced compared to the conventional method.

しかも、外部端子１０が一直線上に並んでいるＳＩＰ型
であるので薄ｍＫなシ、かつ実施時の占有面積を狭く出
来るという長所がある。Furthermore, since it is of the SIP type in which the external terminals 10 are arranged in a straight line, it has the advantage of being thin (mK) and occupying a small area when implemented.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図、第２図は従来のインタツブ！の概略斜視図、及
びその平面断面図でｓｂ、第３図は本発明の組立説明図
、第４図、第５図は本発明のインタラプタの一実施例を
示す斜視図及びその平面断面図である。また第６図は本
発明の他の実施例を示す斜視図。 １・・・・・・発光素子、２・・・・・・受光素子、３
・・・・・・従来ケース、４・・・・・・発光装置、５
・・・・・・受光装置、６・・・・・・レンズ、７・・
・・・・外部端子、８・・・・・・透光性樹脂、９・・
・・・・リードフレーム、ｌＯ・・・・・・外部端子、
１１・・・・・・反射物体。Figures 1 and 2 are conventional interfaces! FIG. 3 is an assembly explanatory diagram of the present invention, and FIGS. 4 and 5 are a perspective view and a plane sectional view thereof showing an embodiment of the interrupter of the present invention. be. FIG. 6 is a perspective view showing another embodiment of the present invention. 1... Light emitting element, 2... Light receiving element, 3
... Conventional case, 4 ... Light emitting device, 5
... Light receiving device, 6 ... Lens, 7 ...
...External terminal, 8...Translucent resin, 9...
...Lead frame, lO...External terminal,
11... Reflective object.

Claims (1)

【特許請求の範囲】[Claims] 樹脂封止型インタラプタにおいて発光素子とを同一リー
ドフレームの同一平面上に載置し、各々の素子に対して
レンズを形成した透光性樹脂で一体ニ封止し、かつ、そ
の各レンズの光軸と各素子の光軸とが同一線上にないよ
うに配置したことをｑ＃敵とするインタラプタ。In a resin-sealed interrupter, a light-emitting element and a light-emitting element are placed on the same plane of the same lead frame, and each element is integrally sealed with a translucent resin with a lens formed thereon, and the light of each lens is An interrupter whose q# enemy is that the axis and the optical axis of each element are not on the same line.
JP59082221A 1984-04-24 1984-04-24 Interruptor Pending JPS60225485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59082221A JPS60225485A (en) 1984-04-24 1984-04-24 Interruptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59082221A JPS60225485A (en) 1984-04-24 1984-04-24 Interruptor

Publications (1)

Publication Number Publication Date
JPS60225485A true JPS60225485A (en) 1985-11-09

Family

ID=13768351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59082221A Pending JPS60225485A (en) 1984-04-24 1984-04-24 Interruptor

Country Status (1)

Country Link
JP (1) JPS60225485A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0391671A2 (en) * 1989-04-03 1990-10-10 Motorola, Inc. Single package electro-optic transmitter-receiver
US5340993A (en) * 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
US5362976A (en) * 1991-10-26 1994-11-08 Nec Corporation High frequency semiconductor device having optical guide package structure
JP2009210422A (en) * 2008-03-04 2009-09-17 Sony Corp Probe device and terahertz spectroscopic apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0391671A2 (en) * 1989-04-03 1990-10-10 Motorola, Inc. Single package electro-optic transmitter-receiver
US5362976A (en) * 1991-10-26 1994-11-08 Nec Corporation High frequency semiconductor device having optical guide package structure
US5340993A (en) * 1993-04-30 1994-08-23 Motorola, Inc. Optocoupler package wth integral voltage isolation barrier
JP2009210422A (en) * 2008-03-04 2009-09-17 Sony Corp Probe device and terahertz spectroscopic apparatus

Similar Documents

Publication Publication Date Title
EP1351319A2 (en) Package for optical semiconductor
CN110235254B (en) Sensing module and manufacturing method thereof
JPH08330608A (en) Light reception sensor and light reception optical sensor
JPS61185980A (en) Light emitting diode
JPS60225485A (en) Interruptor
US4833318A (en) Reflection-type photosensor
JP6529431B2 (en) Optical element package
JP2000150924A (en) Infrared communication device
JPH07211943A (en) Light source device
JPH0422356B2 (en)
JPS62133774A (en) Photosensor
JPS59195882A (en) Interrupter
JPS62190776A (en) Photoelectric conversion device
JPH07209764A (en) Light source device
JP2958228B2 (en) Transmission type optical coupling device
JPH0532804Y2 (en)
JPH0422355B2 (en)
JP2636048B2 (en) Optical semiconductor device
JPH07111342A (en) Light transmission module
JP3115773B2 (en) Plug / Jack type shared optical transmission equipment
JP3121078B2 (en) Manufacturing method of optical coupling device
JPH0729651Y2 (en) Reflective optical coupling device
JPS63213373A (en) Optical semiconductor device
JPWO2022176992A5 (en)
JPS6246282Y2 (en)