JPS62190776A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS62190776A JPS62190776A JP61033585A JP3358586A JPS62190776A JP S62190776 A JPS62190776 A JP S62190776A JP 61033585 A JP61033585 A JP 61033585A JP 3358586 A JP3358586 A JP 3358586A JP S62190776 A JPS62190776 A JP S62190776A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- conversion element
- transparent substrate
- light
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000011347 resin Substances 0.000 claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000005498 polishing Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、光電変換Ｓ！ｉｉ置の構造に関するものであ
る。[Detailed Description of the Invention] (Industrial Application Field) The present invention provides photoelectric conversion S! This relates to the structure of position ii.
（発明の概要）
本発明は、光・電気変換を行なう光電変換素子を塔載し
た光電変換装置において、配線等を施した透明基板に前
記光電変換素子の受光部が面する様に半導体装置製造工
程で用いられる半田バンプ法等を用いて前記光電変換素
子を接続し透明樹脂を前記光電変換素子と前記透明基板
の間に注入することにより、受光素子面への光学距離が
均一であり、防湿性に優れ製造工程も簡易である光電変
換装置を実現するものである。(Summary of the Invention) The present invention provides a photoelectric conversion device mounted with a photoelectric conversion element that performs light-to-electrical conversion, in which the semiconductor device is manufactured so that the light-receiving part of the photoelectric conversion element faces a transparent substrate provided with wiring, etc. By connecting the photoelectric conversion element using the solder bump method used in the process and injecting transparent resin between the photoelectric conversion element and the transparent substrate, the optical distance to the light receiving element surface is uniform and moisture-proof. The objective is to realize a photoelectric conversion device that has excellent performance and a simple manufacturing process.
（従来の技術）
従来より、光電変換素子は受光部に光信号を入射する必
要性があり、かつ前記光電変換素子を外気から遮断する
ためにはエポキシあるいはアクリル等の透明樹脂が使用
されている。さらに前記光電変換素子は、湿度に対して
、敏感な特性を示し、安定性・信頼性を保つために気密
性の良い封止が必要となる。また光電変換素子の各受光
部と光信号の入射面との距離を均一にして、各受光部に
照射される光信号の光学的距離を一定にする必要もある
。光電変換装置の例として、特に最近は原稿と一対一に
対応させた受光部をもち、画像信号を得る密着読み取り
可能なイメージセンサがあり、その開発が盛んである。(Prior Art) Conventionally, a photoelectric conversion element needs to input an optical signal into a light receiving part, and a transparent resin such as epoxy or acrylic has been used to shield the photoelectric conversion element from the outside air. . Furthermore, the photoelectric conversion element exhibits characteristics that are sensitive to humidity, and requires sealing with good airtightness in order to maintain stability and reliability. It is also necessary to equalize the distance between each light-receiving section of the photoelectric conversion element and the plane of incidence of the optical signal, so that the optical distance of the optical signal irradiated to each light-receiving section is constant. As an example of a photoelectric conversion device, there is an image sensor that has a light-receiving portion in one-to-one correspondence with a document and is capable of close-contact reading to obtain an image signal, which has been actively developed recently.
前記イメージセンサは、原稿幅と同寸法の読み取り幅が
必要なために光市変換素子も大きくなり、前述したよう
な光学距離の均一性、防湿性等の問題が生じている。Since the image sensor requires a reading width of the same size as the document width, the optical field conversion element is also large, which causes problems such as optical distance uniformity and moisture resistance as described above.
従来、第２図（ａ’）に示した様に光電変換索子２を凹
形に加工した基板７に実装し、透明ガラス板８を低融点
ガラスあるいはエポキシ等の樹脂により装着することで
光電変換素子２の封止をする□構造となっている。しか
し、この構造の光電変換装置では、基板８を凹形に加′
ｒする必要があり、複数個の光電変換素子を基板８上に
高精麿に実装することは困難である。次に、他の実施例
として第２図（ｂ）を示す。この光電変換装置は、平坦
な基板６に光電変換素子２を実装した後、エポキシある
いはアクリル等の透明樹脂４で前記光電変換素子２を覆
うことにより、封止を行なう構造となっている。この構
造では、光電変換素子２の各受光部と光信号の入射面と
の光学的距離を一定にするために、透明樹脂の面精度が
要求される。さらに透明樹脂が全て外気に接しており、
充分な封止効果が得られない。三番目の従来例として、
第２図（Ｃ）を示づ。この構造は、基板６上に設けた光
電変換素子２に透明ガラス板８を設置し、基板６および
光電変換素子２と透明ガラス板８との間に透明樹脂４を
充填し、この透明樹脂４で光電変換索子２のまわりを覆
い、封止効果を高め、入射面に凹凸の少なくした構造で
ある。しかし、この構造では、ボンディングワイヤ９に
ガラス板８が触れぬ様に設置せねばならず、透明樹脂を
充填する工程は容易ではない。またガラス板８と光電変
換素子２の受光面の光学距離を一定に保つためには、ス
ペーサ等の冶具が必要となる。Conventionally, as shown in FIG. 2(a'), a photoelectric converter 2 is mounted on a substrate 7 processed into a concave shape, and a transparent glass plate 8 is attached using low melting point glass or resin such as epoxy. It has a square structure that seals the conversion element 2. However, in the photoelectric conversion device with this structure, the substrate 8 is formed into a concave shape.
Therefore, it is difficult to mount a plurality of photoelectric conversion elements on the substrate 8 with high precision. Next, FIG. 2(b) is shown as another example. This photoelectric conversion device has a structure in which a photoelectric conversion element 2 is mounted on a flat substrate 6 and then sealed by covering the photoelectric conversion element 2 with a transparent resin 4 such as epoxy or acrylic. In this structure, surface precision of the transparent resin is required in order to keep the optical distance between each light receiving part of the photoelectric conversion element 2 and the incident surface of the optical signal constant. Furthermore, all the transparent resin is in contact with the outside air,
A sufficient sealing effect cannot be obtained. As a third conventional example,
Figure 2 (C) is shown. In this structure, a transparent glass plate 8 is installed on a photoelectric conversion element 2 provided on a substrate 6, and a transparent resin 4 is filled between the substrate 6 and the photoelectric conversion element 2 and the transparent glass plate 8. This structure has a structure in which the photoelectric conversion cord 2 is covered with a material to enhance the sealing effect and to reduce irregularities on the incident surface. However, in this structure, the glass plate 8 must be installed so that it does not touch the bonding wire 9, and the process of filling the transparent resin is not easy. Further, in order to keep the optical distance between the glass plate 8 and the light receiving surface of the photoelectric conversion element 2 constant, a jig such as a spacer is required.
（問題点を解決するための手段）
上記問題点を解決するために本発明は、透明基板に光電
変換素子を半田バンプ法等を用いて実装する。この際、
光電変換素子の受光部はガラス基板に面している。基板
と光電変換素子の間に透明樹脂を充填し気密性を高める
。この構造により、入射面の加工が必要なく、製作工程
の簡単な構造としたものである。(Means for Solving the Problems) In order to solve the above problems, the present invention mounts a photoelectric conversion element on a transparent substrate using a solder bump method or the like. On this occasion,
The light receiving part of the photoelectric conversion element faces the glass substrate. Transparent resin is filled between the substrate and the photoelectric conversion element to improve airtightness. This structure eliminates the need for machining the entrance surface, resulting in a simple manufacturing process.
（実施例）
以下にこの発明の実施例を図面にもとづいて詳細に説明
する。第１図（ａ）は本発明の光電変換装置の一実施例
の断面図である。光電変換素子２がガラス板等に金属電
極３等を施した透明基板１に実装されている。その電気
的接続は透明基板１に通常の半導体装技術で用いられる
半田バンプ法を使用することにより可能である。またこ
の際、光電変換素子２の受光面は、透明基板１と面して
おり、光信号は図面上Ａ側から入射される。また透明基
板１は平坦であるので複数個の光電変換素子を実装する
にも困難が生じることはない。光電変換素子２と透明基
板１の間には、透明樹脂４を充填し外気との遮断を行な
う。第１図（ａ）から明らかなように光電変換素子２の
受光面は透明基板と向きあっており、従来と比較し透明
樹脂の外気に触れる部分は少ない。さらに透明樹脂４は
、前記受光素子２と前記透明基板１の距離が固定されて
いるので前記受光素子２の裏面へまわり込んでも半導体
装置の機能へは何ら影響を与えるものではない。封止効
果を高めるために、受光素子離面へ透明樹脂４よりも気
密性の優れた不透明樹脂５で覆う様にしてもよい。(Example) Examples of the present invention will be described in detail below based on the drawings. FIG. 1(a) is a sectional view of one embodiment of the photoelectric conversion device of the present invention. A photoelectric conversion element 2 is mounted on a transparent substrate 1 made of a glass plate or the like provided with metal electrodes 3 and the like. The electrical connection can be made on the transparent substrate 1 by using a solder bump method used in ordinary semiconductor packaging technology. Further, at this time, the light-receiving surface of the photoelectric conversion element 2 faces the transparent substrate 1, and the optical signal is input from the side A in the drawing. Further, since the transparent substrate 1 is flat, there is no difficulty in mounting a plurality of photoelectric conversion elements. A transparent resin 4 is filled between the photoelectric conversion element 2 and the transparent substrate 1 to isolate it from the outside air. As is clear from FIG. 1(a), the light-receiving surface of the photoelectric conversion element 2 faces the transparent substrate, and the portion of the transparent resin that comes into contact with the outside air is smaller than in the past. Further, since the distance between the light receiving element 2 and the transparent substrate 1 is fixed, the transparent resin 4 does not affect the function of the semiconductor device even if it wraps around to the back surface of the light receiving element 2. In order to enhance the sealing effect, the outer surface of the light-receiving element may be covered with an opaque resin 5 which has better airtightness than the transparent resin 4.
原稿面から反射された光Ｃは、透明基板１および透明樹
脂４を通過して光電変換素子２の受光面に照射されるの
で、入射面は透明基板２となり、光学研磨等の加工は不
要である。またボンディングワイヤを使用しないために
、透明樹脂４を充填する工程も容易に行なえる。The light C reflected from the document surface passes through the transparent substrate 1 and the transparent resin 4 and is irradiated onto the light-receiving surface of the photoelectric conversion element 2, so the incident surface becomes the transparent substrate 2, and processing such as optical polishing is not required. be. Furthermore, since no bonding wire is used, the step of filling the transparent resin 4 can be easily performed.
第１図（ａ）で示した実施例で、その使用法においては
図中Ｂ側を平面に設置する必要が生じる場合もあるが、
第１図（ｂ）に示したように不透明樹脂５で受光素子２
の裏面を覆う際に、平面基板６を設置することにより解
決できる。この時、平面基板６を透明基板２よりも幅を
短くすることにより、前記透明基板２上に施された配線
３から外部へ電気的接続を行なうことが可能である。In the embodiment shown in FIG. 1(a), there may be cases where it is necessary to install the B side in the figure on a flat surface depending on its usage.
As shown in FIG. 1(b), the light receiving element 2 is made of opaque resin 5.
This can be solved by installing a flat substrate 6 when covering the back side of the . At this time, by making the flat substrate 6 shorter in width than the transparent substrate 2, it is possible to electrically connect the wiring 3 provided on the transparent substrate 2 to the outside.
（発明の効果）
本発明は以上説明したように、平坦な透明基板に半田バ
ンプ法等を用いて光電変換素子を実装しこの光電変換素
子と前記透明基板の間に透明樹脂を充填するという簡単
な工程を用いて光電変換装置が製作される。このため従
来のように基板を加工する必要もなく、入射面の加りち
必要なく、ざらに透明樹脂の充填も容易に行なうことが
できる。(Effects of the Invention) As explained above, the present invention is a simple method in which a photoelectric conversion element is mounted on a flat transparent substrate using a solder bump method or the like, and a transparent resin is filled between the photoelectric conversion element and the transparent substrate. A photoelectric conversion device is manufactured using a process. Therefore, it is not necessary to process the substrate as in the conventional case, and there is no need to adjust the entrance surface, and it is possible to easily fill the transparent resin in a rough manner.
また本発明の光電変換装置は、光電変換素子の受光面が
透明基板に面しているために従来の構造よりも気密性が
高く、透明基板が平坦なために高精度に実装可能である
。この様に本発明を用いれば信頼性が高く、安定性に優
れかつ安価な装置を提供する効果がある。Furthermore, the photoelectric conversion device of the present invention has higher airtightness than conventional structures because the light-receiving surface of the photoelectric conversion element faces the transparent substrate, and can be mounted with high precision because the transparent substrate is flat. As described above, the present invention has the effect of providing a highly reliable, highly stable, and inexpensive device.
第１図（ａ）と第１図（ｂ）は、それぞれ本発明の光電
変換装置の断面図、第２図（ａ）、第２図（ｂ）及び第
２図（Ｃ）はそれぞれ従来の光電変換装置の断面図であ
る。
１・・・透明基板
２・・・光電変換素子
３・・・金属配線
４・・・透明樹脂
５・・・不透明樹脂
６・・・平面基板
７・・・凹形基板
８・・・透明ガラス板
９・・・ボンディングワイヤ1(a) and 1(b) are sectional views of the photoelectric conversion device of the present invention, and FIG. 2(a), 2(b), and 2(C) are sectional views of the conventional photoelectric conversion device, respectively. FIG. 2 is a cross-sectional view of a photoelectric conversion device. 1... Transparent substrate 2... Photoelectric conversion element 3... Metal wiring 4... Transparent resin 5... Opaque resin 6... Flat substrate 7... Concave substrate 8... Transparent glass Plate 9...bonding wire
Claims (1)
属配線等が施された透明基板と、この透明基板に設置さ
れた光電変換素子と、前記透明基板と前記光電変換素子
の間に充填された透明樹脂を具備しており、前記光電変
換素子の受光部は前記透明基板に面していることを特徴
とする光電変換装置。A photoelectric conversion device that converts an optical signal into an electrical signal includes a transparent substrate provided with metal wiring, etc., a photoelectric conversion element installed on this transparent substrate, and a photoelectric conversion element filled between the transparent substrate and the photoelectric conversion element. A photoelectric conversion device comprising a transparent resin, wherein a light receiving portion of the photoelectric conversion element faces the transparent substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61033585A JPH06105791B2 (en) | 1986-02-18 | 1986-02-18 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61033585A JPH06105791B2 (en) | 1986-02-18 | 1986-02-18 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62190776A true JPS62190776A (en) | 1987-08-20 |
| JPH06105791B2 JPH06105791B2 (en) | 1994-12-21 |
Family
ID=12390594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61033585A Expired - Lifetime JPH06105791B2 (en) | 1986-02-18 | 1986-02-18 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06105791B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5770889A (en) * | 1995-12-29 | 1998-06-23 | Lsi Logic Corporation | Systems having advanced pre-formed planar structures |
| US5834799A (en) * | 1989-08-28 | 1998-11-10 | Lsi Logic | Optically transmissive preformed planar structures |
| FR2819104A1 (en) * | 2000-12-29 | 2002-07-05 | St Microelectronics Sa | OPTICAL SEMICONDUCTOR PACKAGE WITH TRANSPARENT SUPPORT |
| JP2004023058A (en) * | 2002-06-20 | 2004-01-22 | Seiko Epson Corp | Semiconductor device, manufacturing method therefor, electro-optical device and electronic apparatus |
| JP2006504279A (en) * | 2002-10-25 | 2006-02-02 | フリースケール セミコンダクター インコーポレイテッド | Image sensor device |
| JP2006041084A (en) * | 2004-07-26 | 2006-02-09 | Sharp Corp | Optical semiconductor device, optical connector, and electronic equipment |
| JP2007311416A (en) * | 2006-05-16 | 2007-11-29 | Fujifilm Corp | Solid-state imaging device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4893284A (en) * | 1972-03-09 | 1973-12-03 | ||
| JPS5562776A (en) * | 1978-11-01 | 1980-05-12 | Mitsubishi Electric Corp | Shutter controller for camera |
| JPS59198770A (en) * | 1983-04-26 | 1984-11-10 | Fuji Electric Co Ltd | Photo receiving electronic device |
-
1986
- 1986-02-18 JP JP61033585A patent/JPH06105791B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4893284A (en) * | 1972-03-09 | 1973-12-03 | ||
| JPS5562776A (en) * | 1978-11-01 | 1980-05-12 | Mitsubishi Electric Corp | Shutter controller for camera |
| JPS59198770A (en) * | 1983-04-26 | 1984-11-10 | Fuji Electric Co Ltd | Photo receiving electronic device |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834799A (en) * | 1989-08-28 | 1998-11-10 | Lsi Logic | Optically transmissive preformed planar structures |
| US5770889A (en) * | 1995-12-29 | 1998-06-23 | Lsi Logic Corporation | Systems having advanced pre-formed planar structures |
| FR2819104A1 (en) * | 2000-12-29 | 2002-07-05 | St Microelectronics Sa | OPTICAL SEMICONDUCTOR PACKAGE WITH TRANSPARENT SUPPORT |
| WO2002054498A1 (en) * | 2000-12-29 | 2002-07-11 | Stmicroelectronics Sa | Optical semiconductor device with transparent support |
| JP2004023058A (en) * | 2002-06-20 | 2004-01-22 | Seiko Epson Corp | Semiconductor device, manufacturing method therefor, electro-optical device and electronic apparatus |
| US7435998B2 (en) | 2002-06-20 | 2008-10-14 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, electro-optic device and electronic apparatus with a protective film |
| US7709283B2 (en) | 2002-06-20 | 2010-05-04 | Seiko Epson Corporation | Method of manufacturing a semiconductor device having an insulating protective film covering at least a portion of a tile-shaped element |
| JP2006504279A (en) * | 2002-10-25 | 2006-02-02 | フリースケール セミコンダクター インコーポレイテッド | Image sensor device |
| JP4895506B2 (en) * | 2002-10-25 | 2012-03-14 | インテレクチュアル ベンチャーズ セカンド エルエルシー | Image sensor device |
| JP2006041084A (en) * | 2004-07-26 | 2006-02-09 | Sharp Corp | Optical semiconductor device, optical connector, and electronic equipment |
| JP2007311416A (en) * | 2006-05-16 | 2007-11-29 | Fujifilm Corp | Solid-state imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06105791B2 (en) | 1994-12-21 |
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