JPS60201646A - Fixation of semiconductor wafer - Google Patents
Fixation of semiconductor waferInfo
- Publication number
- JPS60201646A JPS60201646A JP59060389A JP6038984A JPS60201646A JP S60201646 A JPS60201646 A JP S60201646A JP 59060389 A JP59060389 A JP 59060389A JP 6038984 A JP6038984 A JP 6038984A JP S60201646 A JPS60201646 A JP S60201646A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- pressure
- sensitive adhesive
- adhesive film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
Description
【発明の詳細な説明】
この発明は、半導体ウェハを素子小片に切断分離する際
の半導体ウェハの固定方法に関するもので、さらに詳し
くは、切断分離された素子小片を位置固定のまま吸引移
送するのに好適な固定方法に閃するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for fixing a semiconductor wafer when cutting and separating a semiconductor wafer into small element pieces. This provides an insight into a suitable fixing method.
複雑なパターンが形成されている集積回路用半導体ウェ
ハを素子小片に切断分離し、この素子小片を以後の組立
ラインに移送する方法として、ウェハの外径より大なる
貫通孔をもつ平板金属製治具の片側全面に、ポリエステ
ルフィルムを支持体とする感圧性接着フィルムを、垂直
方向から外力を加えてもほとんど変形しない程度に手で
張力を加えながら貼着し、上記の貫通孔から露出した感
圧性接着剤層面に、ウェハを軟質接着性薄板を介して貼
り付け、その後、ウェハを切断し、位置固定のまま裏面
から素子小片を１個１個ニードルで突き上げて吸引移送
する方法が提案されている。A flat metal jig with a through hole larger than the outer diameter of the wafer is used as a method for cutting and separating semiconductor wafers for integrated circuits on which complex patterns are formed into small element pieces and transporting these small element pieces to the subsequent assembly line. A pressure-sensitive adhesive film with a polyester film as a support is attached to the entire surface of one side of the tool while applying tension by hand to the extent that it hardly deforms even when an external force is applied from the vertical direction. A method has been proposed in which a wafer is attached to the surface of a pressure adhesive layer via a soft adhesive thin plate, the wafer is then cut, and the element pieces are pushed up one by one from the back side with a needle while the wafer is fixed in position and transferred by suction. There is.
この方法によると素子小片が位置ずれすることなく接着
性薄板に固定されているため、この素子小片を以後の組
立ラインに正確に移送することができる。しかし、この
方法には、上記の治具の片面に感圧性接着フィルムを張
力を加えながら貼り付けるときに、張力を一定にするの
に高度の熟練を要し、しかも非能率的であるという欠点
がある。According to this method, the element pieces are fixed to the adhesive thin plate without being displaced, so that the element pieces can be accurately transferred to the subsequent assembly line. However, this method requires a high degree of skill to maintain a constant tension when applying pressure-sensitive adhesive film to one side of the jig, and it is inefficient. There is.
また、この方法は、近年の集積度の増大したＬＳＩのよ
うに素子小片の大きさが５０＋Ｊ程度あるいはそれ以上
となる場合には適用できないという欠点がある。これは
次のような理由による。Furthermore, this method has the disadvantage that it cannot be applied to cases where the size of the element pieces is about 50+J or more, such as in LSIs with increased integration in recent years. This is due to the following reasons.
すなわち、この方法においては、半導体ウェハを素子小
片に切断する際に、摩擦熱を除去するとともに切断くず
を除去するために２ ｋｇ ／ ｃ４程度の水圧の水に
よる洗浄が行われる。このため、ウェハ切断時の素子小
片の固定には、この洗浄水によって素子小片が剥がれ落
ちないだけの接着力が必要とされる。しかし、この接着
力が大きすぎると、素子小片を吸引移送する際に、素子
小片の剥離が困難となる。That is, in this method, when cutting a semiconductor wafer into small element pieces, cleaning is performed with water at a pressure of about 2 kg/c4 in order to remove frictional heat and cut waste. Therefore, in order to fix the small element pieces during wafer cutting, adhesive strength is required to prevent the small element pieces from peeling off due to the cleaning water. However, if this adhesive force is too large, it becomes difficult to separate the element pieces when the element pieces are transferred by suction.
そこで、半導体ウェハを感圧性接着フィルムに直接貼着
せずに軟質接着性薄板を介して貼着し、この接着性薄板
の接着力を、ウェハ切断時の洗浄水によって素子小片が
剥がれ落ちないだけの大きさでかつ吸引移送時の作業性
を低下させない大きさに制御している。Therefore, instead of directly attaching the semiconductor wafer to the pressure-sensitive adhesive film, we attached it via a soft adhesive thin plate, and the adhesive strength of this adhesive thin plate was increased to a level that would prevent small element pieces from peeling off due to the washing water when cutting the wafer. The size is controlled to a size that does not reduce workability during suction transfer.
しかし、接着性薄板の接着力をこのように制御しうるの
は素子小片の大きさが２０−程度までであり、これが５
０−程度あるいはそれ以上となるとこのような制御が困
難となる。このため、素子小片の大きさが５０−以上と
なると上記の方法が適用できなくなる。However, the adhesive force of the adhesive thin plate can be controlled in this way only when the size of the element piece is up to about 20 mm, which is 5.
When the value is about 0- or more, such control becomes difficult. Therefore, when the size of the element piece becomes 50 mm or more, the above method cannot be applied.
そこで、この発明者らは、上記の欠点を解消することを
目的として鋭意検討した結果、この発明をなすに至った
。Therefore, the inventors conducted extensive studies aimed at solving the above-mentioned drawbacks, and as a result, they came up with the present invention.
すなわち、この発明は、半導体ウェハを素子小片に切断
分離する際に、半導体ウェハの外径より大なる貫通孔を
持つ平板治具の片面に感圧性接着フィルムを貼り付け、
上記の貫通孔から露出したこの接着フィルムの感圧性接
着剤層上に半導体ウェハを貼着して固定する半導体ウェ
ハの固定方法において、上記の感圧性接着フィルムが加
熱により収縮しうる光透過性のプラスチックフィルムか
らなる支持体とこの支持体上に設けられた光照射により
硬化し三次元網状化する性質を有する感圧性接着剤層と
からなり、上記の平板治具の片面にこの接着フィルムを
貼り付けたのち上記の半導体ウェハの貼着を行う前にこ
の接着フィルムを加熱収縮させることを特徴とする半導
体ウニノーの固定方法に係るものである。That is, in this invention, when cutting and separating a semiconductor wafer into small element pieces, a pressure-sensitive adhesive film is pasted on one side of a flat plate jig having a through hole larger than the outer diameter of the semiconductor wafer.
In a semiconductor wafer fixing method in which a semiconductor wafer is adhered and fixed on the pressure-sensitive adhesive layer of the adhesive film exposed through the above-mentioned through-hole, the above-mentioned pressure-sensitive adhesive film has a light-transmitting layer that can be shrunk by heating. It consists of a support made of a plastic film and a pressure-sensitive adhesive layer provided on the support that has the property of curing and forming a three-dimensional network when irradiated with light, and this adhesive film is attached to one side of the above-mentioned flat plate jig. This relates to a method for fixing a semiconductor uni-no, which is characterized in that the adhesive film is heat-shrinked after being attached and before the above-described semiconductor wafer is attached.
この発明の半導体ウェハの固定方法によれば、支持体が
熱収縮性である感圧性接着フィルムを用いているため、
この接着フィルムを平板治具に貼り付けたのち加熱する
だけでこの接着フィルムを垂直方向から外力を加えても
ほとんど変形しない程度の張力状態とすることができる
。このため、従来の方法のように接着フィルムの貼り付
けに熟練を必要とせず、しかも貼り付けの作業性も大幅
に向上させることができる。According to the semiconductor wafer fixing method of the present invention, since the support uses a heat-shrinkable pressure-sensitive adhesive film,
Simply by attaching this adhesive film to a flat plate jig and then heating it, it is possible to bring this adhesive film into a tensioned state to the extent that it hardly deforms even if an external force is applied from the vertical direction. Therefore, unlike conventional methods, no skill is required to apply the adhesive film, and the workability of the application can be greatly improved.
また、この発明の方法によれば、従来の方法のように軟
質接着性薄板を用いず、上記の接着フィルムの感圧性接
着剤層上に直接半導体ウェハを貼着させるが、この接着
フィルムは上記の張力状態を保持しうるように平板治具
と強固に接着するだけの接着力を有するもの、つまりウ
ェハを貼着した場合は容易に剥離できないだけの接着力
を有するものである。このため、ウェハの切断時には素
子小片はこの接着フィルムに強固に接着して固定されて
おり、洗浄水によっても剥がれ落ちることがなく、また
位置ずれも起こらない。Furthermore, according to the method of the present invention, a semiconductor wafer is directly adhered onto the pressure-sensitive adhesive layer of the adhesive film described above, without using a soft adhesive thin plate as in the conventional method. It has enough adhesive force to firmly adhere to the flat plate jig so that the tension state can be maintained, that is, it has enough adhesive force that it cannot be easily peeled off when a wafer is attached. Therefore, when the wafer is cut, the element pieces are firmly adhered and fixed to this adhesive film, and do not come off even with cleaning water, nor do they become misaligned.
一方、切断後には、平板治具との接着部分をマスクして
接着フィルムの支持体側から光照射することにより、上
記の接着部分を除く感圧性接着剤層を硬化させて三次元
網状化させると、この接着剤層は凝集力が著しく上昇し
、これにともない粘着性をほとんど失うため、制子小片
に対する接着フィルムの接着力は大幅に低下する。この
ため、素子小片の大きさにかかわりなく、つまり５０
ｍＡ程度あるいはそれ以上の大きさの素子小片であって
も接着フィルムからの剥離が容易で吸引移送を作業性良
好に行うことができる。On the other hand, after cutting, the adhesive part with the flat plate jig is masked and light is irradiated from the support side of the adhesive film to cure the pressure-sensitive adhesive layer excluding the adhesive part and form a three-dimensional network. The cohesive force of this adhesive layer increases significantly, and as a result, it loses most of its tackiness, so that the adhesion force of the adhesive film to the gauze pieces decreases significantly. Therefore, regardless of the size of the element piece, that is, 50
Even small element pieces with a size of about mA or more can be easily peeled off from the adhesive film and can be suction-transferred with good workability.
このように、この発明の半導体ウェハの固定方法によれ
ば、素子小片の大きさが５０−以上となる場合でも、ウ
ェハの切断分離および吸引移送を作業性よく行うことが
できる。As described above, according to the semiconductor wafer fixing method of the present invention, even when the size of the element pieces is 50 mm or more, the cutting and separation of the wafer and the suction transfer can be performed with good workability.
この発明の方法において用いる感圧性接着フィルムを構
成する支持体は、加熱により収縮しうる光透過性のプラ
スチックフィルムからなる。このプラスチックフィルム
としては、加熱収縮後にニードルが突き刺されてもこれ
によって裂けたり破れたりすることがないものが選択さ
れ、通常は縦軸方向と横軸方向の収縮率の差が２０％以
下で実質的に等方向性に収縮性を有し、しかも収縮率が
３〜５０％で加熱収縮の応力緩和が小さいものが好まし
い。また、このプラスチックフィルムとしては、加熱収
縮後に１８０〜４６０ ｎｍの光を透過するフィルムが
用いられる。The support constituting the pressure-sensitive adhesive film used in the method of this invention is made of a light-transparent plastic film that can be shrunk by heating. This plastic film is selected so that it will not tear or tear even if it is pierced by a needle after heating shrinkage, and usually the difference in shrinkage rate in the vertical and horizontal directions is 20% or less, making it practically It is preferable that the material has isodirectional shrinkage, has a shrinkage rate of 3 to 50%, and has small stress relaxation due to heat shrinkage. Moreover, as this plastic film, a film that transmits light of 180 to 460 nm after being heat-shrinked is used.
このプラスチックフィルムの具体例としては、縦軸方向
および横軸方向の収縮率が上記のようになるように延伸
され、上記のような光透過性を有するポリエステルフィ
ルム、ポリプロピレンフィルム、ポリエチレンフィルム
、ポリ塩化ビニルフィルムなどが挙げられる。この中で
も物理的強度の点からはポリエステルフィルムあるいは
ポリプロピレンフィルムがとくに好ましい。また、この
プラスチックフィルムの厚みとしては通常２０〜１００
μｍ程度とするのがよい。Specific examples of this plastic film include polyester film, polypropylene film, polyethylene film, polychlorinated film, which has been stretched so that the shrinkage percentage in the vertical and horizontal directions is as shown above, and has the above-mentioned light transmittance. Examples include vinyl film. Among these, polyester film or polypropylene film is particularly preferred from the viewpoint of physical strength. In addition, the thickness of this plastic film is usually 20 to 100 mm.
It is preferable to set it to about μm.
このようなプラスチックフィルムからなる支持体上に設
けられた光照射により硬化し三次元網状化する性質を有
する感圧性接着剤層は、例えば通常のゴム系あるいはア
クリル系の感圧性接着剤に、分子中に少な（とも２個の
光重合性炭素−炭素二重結合を有する低分子量化合物（
以下、光重合性化合物という）および光重合開始剤が配
合されてなる感圧性接着剤組成物を用いて形成される。A pressure-sensitive adhesive layer that is provided on a support made of such a plastic film and has the property of curing and forming a three-dimensional network by being irradiated with light is, for example, an ordinary rubber-based or acrylic-based pressure-sensitive adhesive that has molecules. A low-molecular-weight compound with a small amount (both of which have two photopolymerizable carbon-carbon double bonds)
It is formed using a pressure-sensitive adhesive composition containing a photopolymerizable compound (hereinafter referred to as a photopolymerizable compound) and a photopolymerization initiator.
上記のゴム系あるいはアクリル系の感圧性接着剤は、天
然ゴム、各種の合成ゴムなどのゴム系ポリマーあるいは
ポリ（メタ）アクリル酸アルキルエステル、（メタ）ア
クリル酸アルキルエステルとこれと共重合可能な他の不
飽和単量体との共重合物などのアクリル系ポリマーをベ
ースポリマーとし、必要に応じてポリイソシアネート化
合物、アルキルエーテル化メラミン化合物などの架橋剤
が配合されたものである。なお、上記のベースポリマー
が分子内に光重合性炭素−炭素二重結合を持つものであ
ってもよい。The above rubber-based or acrylic-based pressure-sensitive adhesives can be copolymerized with rubber-based polymers such as natural rubber and various synthetic rubbers, poly(meth)acrylic acid alkyl esters, and (meth)acrylic acid alkyl esters. The base polymer is an acrylic polymer such as a copolymer with other unsaturated monomers, and a crosslinking agent such as a polyisocyanate compound or an alkyl etherified melamine compound is blended as necessary. In addition, the above-mentioned base polymer may have a photopolymerizable carbon-carbon double bond in the molecule.
上記の光重合性化合物は、その分子量が通常１０．００
０以下程度であるのがよく、より好ましくは、光照射に
よる感圧性接着剤層の三次元網状化が効率よくなされる
ように、その分子量が５．０００以下でかつ分子内の光
重合性炭素−炭素二重結合の数が２〜６個のものを用い
るのがよい。The above photopolymerizable compound usually has a molecular weight of 10.00.
The molecular weight is preferably about 0 or less, and more preferably, the molecular weight is 5.000 or less and the photopolymerizable carbon in the molecule is so that the pressure-sensitive adhesive layer can be efficiently formed into a three-dimensional network by light irradiation. - It is preferable to use one having 2 to 6 carbon double bonds.
このようなとくに好ましい光重合性化合物としては、例
えばトリメチロールプロパントリアクリレート、テトラ
メチロールメタンテトラアクリレート、ペンタエリスリ
トールトリアクリレート、ペンタエリスリトールテトラ
アクリレート、ジペンタエリスリトールモノヒドロキシ
ペンタアクリレート、ジペンタエリスリトールへキサア
クリレートなどが挙げられる。また、その他の光重合性
化合物としては、■・４−ブチレングリコールジアクリ
レート、■・６−ヘキサンジオールジアクリレート、ポ
リエチレングリコールジアクリレート、市販のオリゴエ
ステルアクリレートなどが挙げられる。Particularly preferred photopolymerizable compounds include, for example, trimethylolpropane triacrylate, tetramethylolmethanetetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and the like. can be mentioned. Examples of other photopolymerizable compounds include 1.4-butylene glycol diacrylate, 6.6-hexanediol diacrylate, polyethylene glycol diacrylate, and commercially available oligoester acrylates.
光重合性化合物としては、上記の化合物のうちの１種を
単独で用いてもよいし２種以上を併用してもよく、その
使用量は、通常上記のベースポリマー１００重量部に対
して１〜１００重量部の範囲とするのがよい。この使用
量が少なすぎると、感圧性接着剤層の光照射による三次
元網状化が不充分となり、感圧性接着フィルムの素子小
片に対する接着力の低下の程度が小さすぎて好ましくな
い。また、この使用量が多すぎると、感圧性接着剤層の
可塑化が著しく半導体ウェハ切断時に必要な接着力が得
られないため好ましくない。As the photopolymerizable compound, one type of the above-mentioned compounds may be used alone or two or more types may be used in combination, and the amount used is usually 1 part by weight per 100 parts by weight of the above-mentioned base polymer. The range is preferably 100 parts by weight. If the amount used is too small, the three-dimensional reticulation of the pressure-sensitive adhesive layer by light irradiation will be insufficient, and the degree of decrease in the adhesive force of the pressure-sensitive adhesive film to the element pieces will be too small, which is not preferable. On the other hand, if the amount used is too large, the pressure-sensitive adhesive layer will become significantly plasticized, making it impossible to obtain the adhesive force necessary for cutting semiconductor wafers, which is not preferable.
上記の光重合開始剤としては、例えばイソプロピルベン
ゾインエーテル゛、イソブチルベンゾインエーテル、ベ
ンゾフェノン、ミヒラー氏ケトン、クロロチオキサント
ン、ドデシルチオキサントン、ジメチルチオキサントン
、ジエチルチオキサントン、アセトフェノンジエチルケ
タール、ベンジルジメチルケタール、α−ヒドロキシシ
クロへキシルフェニルケ、トン、２−ヒドロキシメチル
フェニルプロパンなどが挙げられ、これらのうちの１種
を単独であるいは２種以上の混合、で使用すればよい０
この光重合開始剤の使用量としては、通常上記のベース
ポリマー１００重量部に対して０．１〜５重量部の範囲
とするのがよい。この使用量が少なすぎると、感圧性接
着剤層の光照射による三次元網状化が不充分となり、感
圧性接着フィルムの素子小片に対する接着力の低下の程
度が小さすぎて好ましくない。また、この使用量が多す
ぎるとそれに見合う効果が得られないばかりか、素子小
片にこの光重合開始剤が残留するため好ましくない。Examples of the above photopolymerization initiators include isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal, α-hydroxycyclo Examples include xylphenyl, ton, and 2-hydroxymethylphenylpropane, and one of these may be used alone or in a mixture of two or more. The amount of this photopolymerization initiator to be used is as follows: Usually, the amount is preferably in the range of 0.1 to 5 parts by weight per 100 parts by weight of the above-mentioned base polymer. If the amount used is too small, the three-dimensional reticulation of the pressure-sensitive adhesive layer by light irradiation will be insufficient, and the degree of decrease in the adhesive force of the pressure-sensitive adhesive film to the element pieces will be too small, which is not preferable. Moreover, if the amount used is too large, not only the corresponding effect will not be obtained, but also the photopolymerization initiator will remain on the element pieces, which is not preferable.
なお、必要に応じてこの光重合開始剤とともにトリエチ
ルアミン、テトラエチルペンタアミン、ジメチルアミノ
エタノールなどのアミン化合物を光重合促進剤として併
用してもよい。Note that, if necessary, an amine compound such as triethylamine, tetraethylpentamine, dimethylaminoethanol, etc. may be used together with this photopolymerization initiator as a photopolymerization accelerator.
上記の各成分が混合されてなる感圧性接着剤組成物を用
いて感圧性接着剤層を形成するには、通常は、上記の熱
収縮性でかつ光透過性の支持体上にこの組成物を塗布し
、必要に応じて加熱すればよい。ただし、この加熱は支
持体の収縮が起こらない条件で行うのがよい。このよう
にして形成される感圧性接着剤層の厚みとしては通常５
〜４０μｍであるのがよい。In order to form a pressure-sensitive adhesive layer using a pressure-sensitive adhesive composition formed by mixing the above-mentioned components, this composition is usually placed on the above-mentioned heat-shrinkable and light-transparent support. , and heat as necessary. However, this heating is preferably carried out under conditions that do not cause shrinkage of the support. The thickness of the pressure-sensitive adhesive layer formed in this way is usually 5.
The thickness is preferably 40 μm.
また、この感圧性接着剤層は、通常１００％モジュラス
（２０°Ｃ）が１０ｋｇ／ｃ１Ａ以下であルノがよく、
また、通常はトルエンに２４時間浸漬してめたゲル分率
が５５重量％未満でゲルの膨潤度が２０倍以上であるの
がよい。In addition, this pressure-sensitive adhesive layer usually has a 100% modulus (at 20°C) of 10 kg/c1A or less, and is preferably made of Luno.
Further, it is usually preferable that the gel fraction obtained by immersion in toluene for 24 hours is less than 55% by weight and the swelling degree of the gel is 20 times or more.
なお、上記の感圧性接着剤層の形成は、場合によっては
、熱収縮性を付与される前のプラスチックフィルムに上
記の組成物を塗布し、必要に応じて加熱し、次いでこの
フィルムを延伸することにより行ってもよい。In addition, in some cases, the above-mentioned pressure-sensitive adhesive layer may be formed by applying the above-mentioned composition to a plastic film before being imparted with heat-shrinkability, heating if necessary, and then stretching this film. You may do so depending on the situation.
この発明の半導体ウェハの固定方法においては、まず、
半導体ウェハの外径より大なる貫通孔を持つ平板治具の
片面に、上記のように構成されてなる感圧性接着フィル
ムを貼り付ける。上記の平板治具は通常金属製であり、
また、貫通孔の数はひとつとは限られず複数個であって
もよい。In the semiconductor wafer fixing method of this invention, first,
The pressure-sensitive adhesive film constructed as described above is pasted on one side of a flat plate jig having a through hole larger than the outer diameter of the semiconductor wafer. The above flat plate jig is usually made of metal,
Further, the number of through holes is not limited to one, and may be plural.
次に、上記の接着フィルムを加、熱して収縮させる。こ
の加熱は通常１００〜１８０°Ｃで５〜６０秒間程度行
えばよく、これによって接着フィルムは垂直方向から外
力を加えてもほとんど変形しない程度の張力状態となる
。接着フィルムをこのような張力状態とすることにより
、このあとに行われる半導体ウェハの正確な位置固定と
切断が容易となり、しかもウェハ切断時に素子小片の位
置ずれが起こらない。Next, the above adhesive film is heated to shrink it. This heating is usually carried out at 100 to 180°C for about 5 to 60 seconds, and the adhesive film is brought into a tensioned state to the extent that it hardly deforms even if an external force is applied from the vertical direction. By placing the adhesive film in such a tensioned state, it becomes easy to accurately fix the position of the semiconductor wafer and cut the semiconductor wafer, and furthermore, when the wafer is cut, the position of the small element pieces does not occur.
上記の加熱収縮後、上記の貫通孔から露出した接着フィ
ルムの感圧性接着剤層上に半導体ウエノ１をパターンが
形成された面とは反対側の面（以下、裏面という）から
貼着して固定する。このときの接着フィルムのウェハ裏
面に対する１８０剥離接着力（剥離速度８００１１１ｆ
ｆ／分）は、通常２００〜１．０００ ｆ ／２０ｍｙ
ｔｔである。このため、ウェハの切断時には接着フィル
ムと素子小片とは強固に接着しており、２ ｋｇ ／
ｃＡ程度の水圧の洗浄水によっても素子小片が剥がれ落
ちることがなく、また位置ずれも生じない。After the heat shrinkage described above, the semiconductor wafer 1 is pasted onto the pressure-sensitive adhesive layer of the adhesive film exposed through the through-hole from the side opposite to the side on which the pattern is formed (hereinafter referred to as the back side). Fix it. At this time, 180 peel adhesive force of the adhesive film to the back side of the wafer (peeling speed 800111f
f/min) is usually 200 to 1.000 f/20my
It is tt. Therefore, when the wafer is cut, the adhesive film and the small element pieces are firmly adhered, and the weight of 2 kg/
Even with cleaning water at a water pressure of approximately cA, the element pieces do not peel off or become misaligned.
第１図はこの発明の固定方法により固定された半導体ウ
ェハが素子小片に切断された状態の一例を示す平面図で
あり、第２図は第１図のＩ−１線断面図である。両図に
おいて１は半導体ウェハの外径より大なる貫通孔を持つ
平板治具、２は感圧性接着フィルムであり、この接着フ
ィルム２は光透過性の支持体３と光照射により硬化し三
次元網状化する性質を有する感圧性接着剤層４とから構
成されている。５は通常５０〜１０〇−程度の大きさの
素子小片であり、この素子小片は正確な位置に固定され
ている。FIG. 1 is a plan view showing an example of a state in which a semiconductor wafer fixed by the fixing method of the present invention is cut into small element pieces, and FIG. 2 is a sectional view taken along line I-1 in FIG. 1. In both figures, 1 is a flat plate jig with a through-hole larger than the outer diameter of the semiconductor wafer, and 2 is a pressure-sensitive adhesive film, and this adhesive film 2 is cured by light irradiation with a transparent support 3 to form a three-dimensional structure. and a pressure-sensitive adhesive layer 4 that has the property of forming a network. Reference numeral 5 denotes a small element piece that usually has a size of about 50 to 100 mm, and this small element piece is fixed at a precise position.
この発明の方法により上記のように固定されている素子
小片を、以後の組立ラインに吸引移送するには、まず、
上記の接着フィルムと平板治具との接着部分をマスクし
た状態で支持体側から光照射する。この光照射により感
圧性接着剤層において光重合性化合物どうしが重合する
とともに、ペースポリマーにもラジカルが発生してこの
ポリマーと光重合性化合物とが反応し、この接着剤層は
硬化し三次元網状化する。上記の光照射は、通常、高圧
水銀ランプ、超高圧水銀ランプなどにより１８０〜４６
０ ’ｎｍの波長の光を１０〜１８０秒程度照射するこ
とにより行えばよい♂
なお、ここでいう三次元網状化とは、通常、接着剤層を
トルエンに２４時間浸漬してめたゲル分率が光照射前の
約１．４倍以上となり、かつこのゲル分率が５５重量％
以上となることを意味する。In order to suction-transfer the small element pieces fixed as described above by the method of this invention to the subsequent assembly line, first,
Light is irradiated from the support side while masking the adhesive portion between the adhesive film and the flat plate jig. This light irradiation causes the photopolymerizable compounds to polymerize with each other in the pressure-sensitive adhesive layer, and radicals are also generated in the pace polymer, causing the polymer to react with the photopolymerizable compound, and this adhesive layer hardens and becomes three-dimensional. Reticulate. The above light irradiation is usually performed using a high pressure mercury lamp, ultra-high pressure mercury lamp, etc.
This can be done by irradiating light with a wavelength of 0'nm for about 10 to 180 seconds♂ Note that three-dimensional reticulation here is usually a gel mixture formed by immersing the adhesive layer in toluene for 24 hours. The gel fraction is about 1.4 times or more than before light irradiation, and this gel fraction is 55% by weight.
This means the above.
また、光照射後の接着剤層は上記と同様にしてめたゲル
の膨潤度が通常１８倍以下となるのがよい。Further, the adhesive layer after irradiation with light preferably has a swelling degree that is usually 18 times or less than that of the gel prepared in the same manner as above.
このように三次元網状化することにより、接着剤層の凝
集力は光照射前に比べて著しく上昇し、通常１００％モ
ジュラス（２０°Ｃ）が２０ｋｇ／ｃＡ以上となる。こ
れにともない接着剤層の粘着性はほとんど失われて、接
着フィルムの接着力は大幅に低下し、このときの素子小
片に対する１８０剥離接着力（剥離速度８００ｍｍ１分
）は通常１５０９ ／ ２０ ｒａｍ以下となる。この
ため、素子小片の大きさが５０−以上であっても接着フ
ィルムからの素子小片の剥離を容易に行うことができる
ため吸引移送の作業性は良好である。By creating a three-dimensional network in this way, the cohesive force of the adhesive layer increases significantly compared to before irradiation with light, and the 100% modulus (at 20° C.) usually becomes 20 kg/cA or more. As a result, the tackiness of the adhesive layer is almost lost, and the adhesive strength of the adhesive film is significantly reduced. At this time, the 180 peel adhesive force (peeling speed 800 mm 1 minute) to the small element piece is usually 1509 / 20 ram or less. Become. Therefore, even if the element pieces have a size of 50 mm or more, the element pieces can be easily peeled off from the adhesive film, so that the workability of suction transfer is good.
以下にこの発明の実施例を記載す、る。な＄、以下にお
いて部とあるのは重量部を意味する。Examples of this invention will be described below. In the following, parts refer to parts by weight.
実施例１
アクリル酸ブチル１００部、アクリロニトリル５部およ
びアクリル酸５部からなる配合組成物をトルエン中で共
重合させて、数平均分子量ａｏｏ、ｏｏｏのアクリル系
共重合物を得た。Example 1 A blended composition consisting of 100 parts of butyl acrylate, 5 parts of acrylonitrile, and 5 parts of acrylic acid was copolymerized in toluene to obtain an acrylic copolymer having number average molecular weights of aoo and ooo.
この共重合物１００部にポリイソシアネート化合物（日
本ポリウレタン社製商品名コロネー）Ｌ）５部、ジペン
タエリスリトールモノヒドロキシペンタアクリレート１
５部およびα−ヒドロキシシクロへキシルフェニルケト
ン１部を添加し混合して感圧性接着剤組成物を調製した
。To 100 parts of this copolymer, 5 parts of polyisocyanate compound (trade name: Corone L, manufactured by Nippon Polyurethane Co., Ltd.), 1 part of dipentaerythritol monohydroxypentaacrylate
5 parts and 1 part of α-hydroxycyclohexylphenyl ketone were added and mixed to prepare a pressure sensitive adhesive composition.
この組成物を２５μｍの厚みの延伸ポリエチレンテレフ
タレートフィルム（熱収縮率が縦１０％、横５％、熱収
縮後１８０〜４６０ｎｍの光を透過するフィルム）の片
面に接着剤層の厚みが１０μｍとなるように塗工し、９
０°Ｃで３分間加熱して感圧性接着フィルムを得た。This composition was applied to one side of a 25 μm thick stretched polyethylene terephthalate film (a film with a heat shrinkage rate of 10% vertically and 5% horizontally, which transmits light of 180 to 460 nm after heat shrinking) so that the adhesive layer had a thickness of 10 μm. Coat as shown, 9
A pressure-sensitive adhesive film was obtained by heating at 0°C for 3 minutes.
この接着フィルムを直径１６．５ｃｍの貫通孔を持つ平
板治具の片面に貼り付け、次いでこの接着フィルムを１
１０°Ｃで１０秒間加熱して収縮させた。This adhesive film was pasted on one side of a flat plate jig having a through hole with a diameter of 16.5 cm, and then this adhesive film was
Shrinkage was achieved by heating at 10°C for 10 seconds.
これによって接着フィルムは垂直方向から外力を加えて
もほとんど変形しない程度の張力状態となった。As a result, the adhesive film was placed under such tension that it hardly deformed even if an external force was applied from the vertical direction.
次に上記の貫通孔から露出した接着フィルムの・感圧性
接着剤層上に直径１０ｃ１ｎ、厚み０．２５ ｆｌの半
導体ウェハを裏面側から貼着して固定したのち、このウ
ェハを７５−の大きさの素子小片に切断した。この切断
は２ ｋｇ ／ ｃＩＩの水圧の水で洗浄しながら行っ
たが、素子小片の剥離や位置ずれは生じなかった。Next, a semiconductor wafer with a diameter of 10 cm and a thickness of 0.25 fl was adhered and fixed from the back side onto the pressure-sensitive adhesive layer of the adhesive film exposed from the above-mentioned through hole, and then this wafer was The element was cut into small pieces. This cutting was performed while washing with water at a pressure of 2 kg/cII, but no peeling or displacement of the element pieces occurred.
ウェハ切断後、上記の接着フィルムと平板治具との接着
部分をマスクしたのち支持体側から高圧水銀ランプ（４
０Ｗ／ｃｍ）で１５ｃｍの距離から２０秒間光照射した
。次いで素子小片をニードルで１個ずつ突き上げながら
吸引移送したところ、接着フィルムから素子小片が容易
に剥離して吸引移送の作業性が良好であった。After cutting the wafer, after masking the bonded area between the adhesive film and the flat plate jig, a high-pressure mercury lamp (4
Light was irradiated for 20 seconds at a distance of 15 cm (0 W/cm). Next, when the element pieces were suction-transferred while being pushed up one by one with a needle, the element pieces were easily peeled off from the adhesive film, and the workability of suction-transfer was good.
実施例２
アクリル系共重合物（実施例１と同じもの）１００部に
ポリイソシアネート化合物（実施例１と同じもの）５部
、ペンタエリスリトールトリアクリレート２０部および
インブチルベンゾインエーテル０５部を添加し混合して
感圧性接着剤組成物を調製した。この組成物を用いて実
施例１と同様にして感圧性接着フィルムを作製した。Example 2 5 parts of a polyisocyanate compound (same as in Example 1), 20 parts of pentaerythritol triacrylate, and 05 parts of inbutylbenzoin ether were added and mixed to 100 parts of an acrylic copolymer (same as in Example 1). A pressure sensitive adhesive composition was prepared. A pressure-sensitive adhesive film was produced in the same manner as in Example 1 using this composition.
この接着フィルムを実施例１と同様の平板治具の片面に
貼り付け、次いでこの接着フィルムを１１０°Ｃで１０
秒間加熱して収縮させた。これによって接着フィルムは
垂直方向から外力を加えてもほとんど変形しない程度の
張力状態となった。This adhesive film was pasted on one side of the same flat plate jig as in Example 1, and then this adhesive film was heated at 110°C for 10 hours.
It was heated for a second to shrink. As a result, the adhesive film was placed under such tension that it hardly deformed even if an external force was applied from the vertical direction.
次に上記の平板治具の貫通孔から露出した接着フィルム
の感圧性接着剤層上に直径１０ｃＩｎ、厚み０、２５
ＭＭの半導体ウェハを裏面側から貼着して固定したのち
、このウェハを７５−の大きさの素子小片に切断した。Next, on the pressure-sensitive adhesive layer of the adhesive film exposed from the through hole of the flat plate jig, a diameter of 10 cIn and a thickness of 0.25 cm was applied.
After a MM semiconductor wafer was adhered and fixed from the back side, this wafer was cut into element pieces of 75 mm size.
このとき実施例１と同様に洗浄しながら切断したが素子
小片の剥離や位置ずれは生じなかった。At this time, the device was cut while being washed in the same manner as in Example 1, but no peeling or displacement of the element pieces occurred.
ウェハ切断後、実施例１と同様にして光照射したのち吸
引移送したところ、接着フィルムから素子小片が容易に
剥離して吸引移送の作業性が良好であった。After cutting the wafer, the wafer was irradiated with light in the same manner as in Example 1, and then transferred by suction. The element pieces were easily peeled off from the adhesive film, and the workability of the suction transfer was good.
比較例
ジペンタエリスリトールモノヒドロキシペンタアクリレ
ート１５部およびα−ヒドロキシシクロへキシルフェニ
ルケトン１部を使用しなかった以外は実施例１と同様に
して感圧性接着剤組成物を調製し、この組成物を用いて
実施例１と同様にして感圧性接着フィルムを得た。Comparative Example A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1, except that 15 parts of dipentaerythritol monohydroxypentaacrylate and 1 part of α-hydroxycyclohexylphenyl ketone were not used. A pressure-sensitive adhesive film was obtained in the same manner as in Example 1.
この接着フィルムを実施例１と同様の平板治具の片面に
貼り付け、次いでこの接着フィルムを１１０°Ｃで１０
秒間加熱して収縮させた。これによって接着フィルムは
垂直方向から外力を加えてもほとんど変形しない程度の
張力状態となった。This adhesive film was pasted on one side of the same flat plate jig as in Example 1, and then this adhesive film was heated at 110°C for 10 hours.
It was heated for a second to shrink. As a result, the adhesive film was placed under such tension that it hardly deformed even if an external force was applied from the vertical direction.
次に上記の平板治具の貫通孔から露出した接着フィルム
の感圧性接着剤層上に直径１０Ｃ１ｎ、厚み０、２５
朋の側導体ウェハを裏面側から貼着して固定したのち、
このウェハを７５−の大きさの素子小片に切断した。こ
のとき実施例１と同様に洗浄しながら行ったが、素子小
片の剥離や位置ずれは生じなかった。Next, on the pressure sensitive adhesive layer of the adhesive film exposed from the through hole of the flat plate jig, a diameter of 10C1n and a thickness of 0.25
After pasting and fixing my side conductor wafer from the back side,
This wafer was cut into 75-sized device pieces. At this time, cleaning was carried out in the same manner as in Example 1, but no peeling or displacement of the element pieces occurred.
ウェハ切断後、素子小片をニードルで１個ずつ突き上げ
て吸引移送しようとしたが、接着フィルムから素子小片
が剥離せず吸引移送できなかった。After cutting the wafer, an attempt was made to push up the small element pieces one by one with a needle and transfer them by suction, but the small element pieces did not peel off from the adhesive film and could not be transferred by suction.
また、実施例１と同様にして光照射し、次いで吸引移送
しようとしたが、上記同様に吸引移送できなかった。Furthermore, an attempt was made to perform light irradiation and then suction transfer in the same manner as in Example 1, but suction transfer was not possible in the same manner as described above.
試験例
く１８０剥離接着力〉
上記の実施例１，２および比較例で用いた感圧性接着フ
ィルムの半導体ウェハ裏面に対する１８０剥離接着力（
剥離速度８０Ｑｙｔｔｙｔｔ／分）を測定した。また、
上記の接着フィルムを半導体ウェハ裏面に貼り付けて支
持体側から高圧水銀ランプ（４０Ｗ ／ａｒｓ ）で１
５ｃｎＬの距離から２０秒間光照射したのち、上記の接
着力を測定した。Test Example - 180 Peel Adhesion Strength> The 180 Peel Adhesion Strength (
A peeling rate of 80 Qyttytt/min) was measured. Also,
The above adhesive film was pasted on the back side of the semiconductor wafer and exposed to a high pressure mercury lamp (40W/ars) from the support side.
After irradiating with light for 20 seconds from a distance of 5 cnL, the above adhesive strength was measured.
く１００％モジュラス〉
上記の実施例１，２および比較例で用いた感圧性接着剤
組成物をそれぞれ剥離処理を施した５０μｍの厚みのポ
リエチレンテレフタレートフィルムの表面に厚み１０
ｆｉｍとなるように塗工し、９０°Ｃで３分間加熱した
のち、５０ｍｍ×５０ｍｍの大きさに切断し、棒状にま
るめることにより断面積が０．５−の糸状の試験片を得
た。この試験片について２０℃における１００％モジュ
ラスを測定した。また、この試験片に上記と同様の条件
で光照射したのち、同様の１００％モジュラスを測定し
た。100% modulus> The pressure-sensitive adhesive compositions used in Examples 1 and 2 and Comparative Examples above were applied to the surface of a 50 μm thick polyethylene terephthalate film that had been subjected to a release treatment.
fim, heated at 90°C for 3 minutes, cut into pieces of 50 mm x 50 mm, and rolled into a rod to obtain a thread-like test piece with a cross-sectional area of 0.5-. The 100% modulus at 20°C was measured for this test piece. Further, after irradiating this test piece with light under the same conditions as above, the same 100% modulus was measured.
くゲル分率、ゲルの膨潤度〉
上記の感圧性接着剤組成物をそれぞれ１００％モジュラ
ス用試験片の場合と同様に塗工、加熱したのち、５０部
ｍｘ５００πＭの大きさに切断したものを試験片とした
。この試験片をトルエンに２４時間浸漬してゲル分率と
ゲルの膨潤度を調べた。Gel fraction, swelling degree of gel〉 Each of the above pressure-sensitive adhesive compositions was coated and heated in the same manner as for the 100% modulus test piece, and then cut into a size of 50 parts m x 500 πM and tested. It was a piece. This test piece was immersed in toluene for 24 hours, and the gel fraction and gel swelling degree were examined.
また、この試験片に上記と同様の条件で光照射したのち
、これをトルエンに２４時間浸漬してゲル分率とゲルの
膨潤度を調べた。In addition, this test piece was irradiated with light under the same conditions as above, and then immersed in toluene for 24 hours to examine the gel fraction and swelling degree of the gel.
上記の試験結果を下記の表に示した。なお、下記の表に
おいてＡ欄は光照射前の測定値を示し、Ｂ欄は光照射後
の測定値を示す。The above test results are shown in the table below. In the table below, column A shows the measured values before light irradiation, and column B shows the measured values after light irradiation.
上記の実施例から明らかなように、この発明の半導体ウ
ェハの固定方法によれば、平板治具の片面に感圧性接着
フィルムを貼り付けたのち加熱するだけでこのフィルム
を垂直方向から外力を加えてもほとんど変形することの
ない張力状態とすることができる。また、ウェハ切断時
には接着フィルムと素子小片が強固に接着しており、素
子小片の剥離や位置すれが生じない。一方、ウェハ切断
時には、光照射により接着フィルムからの素子小片の剥
離が容易となるため吸引移送を作業性よく行うことがで
きる。As is clear from the above embodiments, according to the semiconductor wafer fixing method of the present invention, a pressure-sensitive adhesive film is pasted on one side of a flat plate jig and then heated, and an external force is applied to the film from the vertical direction. It is possible to create a tension state in which there is almost no deformation even when the material is moved. Further, when the wafer is cut, the adhesive film and the element pieces are firmly adhered to each other, so that the element pieces do not peel off or become misaligned. On the other hand, when cutting the wafer, the light irradiation facilitates peeling off of the small element pieces from the adhesive film, so suction transfer can be performed with good workability.
また、上記のように光照射により接着フィルムからの素
子小片の剥離が容易となるのは、上記の接着フィルムの
感圧性接着剤層が光照射により三次元網状化して凝集力
が著しく上昇し、これにともない粘着性をほとんど失う
ため、接着フィルムの素子小片に対する接着力が大幅に
低下するためであることがわかる。Furthermore, as mentioned above, the reason why the element pieces can be easily peeled off from the adhesive film by light irradiation is that the pressure-sensitive adhesive layer of the adhesive film becomes three-dimensionally reticulated by light irradiation, and the cohesive force increases significantly. It can be seen that this is because most of the adhesiveness is lost as a result of this, and the adhesive force of the adhesive film to the element pieces is significantly reduced.
第１図はこの発明の半導体ウェハの固定方法を説明する
ための平面図、第２図は第１図のＩ−Ｉ線断面図である
。
１・・・平板治具、２・・・感圧性接着フィルム、３・
・・支持体、４・・・感圧性接着剤層、５・・・素子小
片。
特許出願人 日東電気工業株式会社FIG. 1 is a plan view for explaining the semiconductor wafer fixing method of the present invention, and FIG. 2 is a cross-sectional view taken along the line II in FIG. 1. 1... Flat plate jig, 2... Pressure sensitive adhesive film, 3...
...Support, 4...Pressure-sensitive adhesive layer, 5...Element piece. Patent applicant Nitto Electric Industry Co., Ltd.
Claims (4)
導体ウェハの外径より大なる貫通孔を持つ平板治具の片
面に感圧性接着フィルムを貼り付け、上記の貫通孔から
露出したこの接着フィルムの感圧性接着剤層上に半導体
ウェハを貼着して固定する半導体ウェハの固定方法にお
いて、上記の感圧性接着フィルムが加熱により収縮しう
る光透過性のプラスチックフィルムからなる支持体とこ
の支持体上に設けられた光照射により硬化し三次元網状
化する性質を有する感圧性接着剤層とからなり、上記の
平板治具の片面にこの接着フィルムを貼り付けたのち上
記の半導体ウェハの貼着を行う前にこの接着フィルムを
加熱収縮させることを特徴とする半導体ウェハの固定方
法。(1) When cutting and separating a semiconductor wafer into small element pieces, a pressure-sensitive adhesive film is pasted on one side of a flat plate jig having a through hole larger than the outside diameter of the semiconductor wafer, and the adhesive film exposed through the through hole is attached. A semiconductor wafer fixing method in which a semiconductor wafer is attached and fixed on a pressure-sensitive adhesive layer of a film includes a support made of a light-transmitting plastic film that allows the pressure-sensitive adhesive film to shrink when heated, and this support. It consists of a pressure-sensitive adhesive layer that is placed on the body and has the property of curing and forming a three-dimensional network when exposed to light. After this adhesive film is pasted on one side of the above-mentioned flat plate jig, the above-mentioned semiconductor wafer is pasted. A method for fixing a semiconductor wafer, the method comprising heating and shrinking the adhesive film before bonding.
に対して２００〜１．０００ ｆ／２０鰭の１８♂剥離
接着力を有し、光照射後にはこの接着力が１５０ｆ／２
０酊以下となる特許請求の範囲第（１）項記載の半導体
ウエノ・の固定方法。(2) The pressure-sensitive adhesive film has a 18♂ peel adhesion force of 200 to 1.000 f/20 fins to the semiconductor wafer before irradiation with light, and this adhesive force increases to 150 f/2 after irradiation with light.
A method for fixing a semiconductor wafer according to claim (1), which results in less than 0 intoxication.
分子内に光重合性炭素−炭素二重結合を少なくとも２個
有する低分子量化合物１〜１００重量部および光重合開
始剤０．１〜５重量部を必須成分として含む感圧性接着
剤組成物を支持体に塗工して設けられた特許請求の範囲
第（２）項記載の半導体ウェハの固定方法。(3) the pressure-sensitive adhesive layer is a base polymer of 100 parts by weight;
Supports a pressure-sensitive adhesive composition containing 1 to 100 parts by weight of a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule and 0.1 to 5 parts by weight of a photopolymerization initiator as essential components. A method for fixing a semiconductor wafer according to claim (2), wherein the method is provided by coating a semiconductor wafer on a body.
５重量％以上でかつ光照射前のゲル分率の１．４倍以上
となる特許請求の範囲第（３）項記載の半導体ウェハの
固定方法。(4) When the pressure-sensitive adhesive layer is irradiated with light, its gel fraction decreases to 5.
The method for fixing a semiconductor wafer according to claim (3), wherein the gel fraction is 5% by weight or more and 1.4 times or more the gel fraction before light irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6038984A JPH06105752B2 (en) | 1984-03-27 | 1984-03-27 | Semiconductor wafer processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6038984A JPH06105752B2 (en) | 1984-03-27 | 1984-03-27 | Semiconductor wafer processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60201646A true JPS60201646A (en) | 1985-10-12 |
| JPH06105752B2 JPH06105752B2 (en) | 1994-12-21 |
Family
ID=13140739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6038984A Expired - Lifetime JPH06105752B2 (en) | 1984-03-27 | 1984-03-27 | Semiconductor wafer processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06105752B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62189110A (en) * | 1986-02-17 | 1987-08-18 | ウシオ電機株式会社 | Adhesive sheet treater |
| JPS62189112A (en) * | 1986-02-17 | 1987-08-18 | ウシオ電機株式会社 | Adhesive sheet treater |
| JP2007157887A (en) * | 2005-12-02 | 2007-06-21 | Disco Abrasive Syst Ltd | Wafer-dividing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4968657A (en) * | 1972-11-06 | 1974-07-03 | ||
| JPS5419624A (en) * | 1977-07-15 | 1979-02-14 | Hitachi Ltd | Adhering method of adhesive tape |
| JPS5850164A (en) * | 1981-09-19 | 1983-03-24 | Nippon Steel Corp | Continuous casting installation |
| JPS5921038A (en) * | 1982-07-27 | 1984-02-02 | Nec Home Electronics Ltd | Releasing method for pellet |
-
1984
- 1984-03-27 JP JP6038984A patent/JPH06105752B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4968657A (en) * | 1972-11-06 | 1974-07-03 | ||
| JPS5419624A (en) * | 1977-07-15 | 1979-02-14 | Hitachi Ltd | Adhering method of adhesive tape |
| JPS5850164A (en) * | 1981-09-19 | 1983-03-24 | Nippon Steel Corp | Continuous casting installation |
| JPS5921038A (en) * | 1982-07-27 | 1984-02-02 | Nec Home Electronics Ltd | Releasing method for pellet |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62189110A (en) * | 1986-02-17 | 1987-08-18 | ウシオ電機株式会社 | Adhesive sheet treater |
| JPS62189112A (en) * | 1986-02-17 | 1987-08-18 | ウシオ電機株式会社 | Adhesive sheet treater |
| JP2007157887A (en) * | 2005-12-02 | 2007-06-21 | Disco Abrasive Syst Ltd | Wafer-dividing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06105752B2 (en) | 1994-12-21 |
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|---|---|---|---|
| EXPY | Cancellation because of completion of term |