JPS60189938A - Protective method of semiconductor wafer - Google Patents
Protective method of semiconductor waferInfo
- Publication number
- JPS60189938A JPS60189938A JP4774284A JP4774284A JPS60189938A JP S60189938 A JPS60189938 A JP S60189938A JP 4774284 A JP4774284 A JP 4774284A JP 4774284 A JP4774284 A JP 4774284A JP S60189938 A JPS60189938 A JP S60189938A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- adhesive film
- sensitive adhesive
- wafer
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
この発明は、ＩＣ素子の形成を終えた半導体ウェハを研
摩する際にこのウェハを保護するための方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for protecting a semiconductor wafer after forming IC elements thereon during polishing.
半導体ウェハの製造工程において、一般に、ＩＣ素子の
形成を終えたウェハをできるたけ薄く均一にするために
、このウェハの裏面を研摩することが行われており、こ
の研摩により例えば０．５關程度の厚みのウェハは０．
２〜０．３ ｙｎｍ程度の厚みとされる。In the manufacturing process of semiconductor wafers, the back surface of the wafer is generally polished in order to make the wafer after forming IC elements as thin and uniform as possible. A wafer with a thickness of 0.
The thickness is approximately 2 to 0.3 ynm.
この研摩工程において半導体ウェハが破損したりＩＣ素
子の形成されたウェハ表面が傷付くのを防ぐために、ア
）ウェハ表面に塗料を用いて被膜を形成したのち裏面を
研摩し、研摩後この被膜を溶剤により除去する、イ）薄
葉シートをスペーサーとしてウェハ表面に積層して裏面
研摩したのもこのシートを取り除く、つ）ウェハ表面に
感圧性接着フィルムを貼り付けたのち裏面を研摩し、研
摩後このフィルムを剥離するなどの方法がとられていた
。In order to prevent damage to the semiconductor wafer and damage to the wafer surface on which IC elements are formed during this polishing process, a) a coating is formed on the wafer surface using paint, and then the back surface is polished, and this coating is removed after polishing. 1) A thin sheet is laminated on the wafer surface as a spacer and the back side is polished. 3) A pressure-sensitive adhesive film is attached to the wafer surface and the back side is polished. Methods such as peeling off the film were used.
しかしながら、上記のアの方法では、被膜形成の作業性
の面から被膜の厚みか通常１．０７７ｍ以下とされるた
め、研摩時にウェハ表面が傷付いたりウェハに割れが生
じるなどウェハの保護が充分に行えなかった。また、上
記のイの方法でも、薄葉シートがウェハに接着していな
いためウェハに対する補強効果が不充分で、ウェハが欠
けたり割れたりするなどウェハの保護は充分ではなかっ
た。However, in method A above, the thickness of the film is usually set to 1.077 m or less from the viewpoint of workability of film formation, so the wafer is not sufficiently protected from scratches or cracks on the wafer surface during polishing. I couldn't go to Further, even in the above method (a), since the thin sheet was not adhered to the wafer, the reinforcing effect on the wafer was insufficient, and the wafer was not sufficiently protected, such as chipping or cracking of the wafer.
これに対して」１記のつの方法は、通常８０１ｔｍ程度
までの厚みの感圧性接着フィルムをウェハ表面に貼り付
けるため、すぐれた保護効果が得られるとともに研摩に
よるウェハの厚み精度が良好であるという利点を有して
いる。この方法で用いられる感圧性接着フィルムの接着
力は、ウェハの表面と良好に接着しうるだけの大きさで
しかも研摩後の接着フィルムの剥離に困難をきたさない
程度の大きさに制御されている。On the other hand, the method described in 1. usually affixes a pressure-sensitive adhesive film with a thickness of up to 801 tm to the wafer surface, which provides excellent protection and provides good wafer thickness accuracy through polishing. It has advantages. The adhesive force of the pressure-sensitive adhesive film used in this method is controlled to be large enough to adhere well to the wafer surface, but not to cause difficulty in peeling off the adhesive film after polishing. .
しかしながら、この方法では、半導体ウェハの表面状態
によっては上記のフィルムの接着状態にほらつきを生じ
やすいという問題があり、例えば研摩時のウェハの保護
か不充分であったり、研摩後の剥離作業性か低下したり
、あるいは剥離時にウェハを破損するなどの事態が生じ
る場合があった。However, this method has the problem that depending on the surface condition of the semiconductor wafer, the adhesion of the film described above tends to be uneven. In some cases, the wafer may be damaged during peeling.
そこで、この発明者らは、上記のつの方法におけるこの
問題を解決することを目的として鋭意検討した結果、こ
の発明をなすに至った。Therefore, the inventors conducted intensive studies aimed at solving this problem in the above-mentioned three methods, and as a result, they came up with the present invention.
すなわち、この発明は、半導体ウェハの裏面を研摩する
にあたり、このウェハの表、面に感圧性接着フィルムを
貼り付げ、上記の研摩後この接着フィルムを剥離する半
導体ウェハの保護方法において、−１−記の感圧性接着
フィルムが光透過性の支持体とこの支持体上に設けられ
た光照射により硬化し三次元網状化する性質を有する感
圧性接着剤１とからなり、研摩後この接着フィルムを剥
離する前にこの接着フィルムに光照射することを特徴と
する半導体ウェハの保護方法に係るものである。That is, the present invention provides a method for protecting a semiconductor wafer, in which a pressure-sensitive adhesive film is attached to the front side of the wafer when the back side of the semiconductor wafer is polished, and the adhesive film is peeled off after the above-mentioned polishing. - The pressure-sensitive adhesive film described above is composed of a light-transmissive support and a pressure-sensitive adhesive 1 provided on the support that has the property of curing and forming a three-dimensional network when irradiated with light, and after polishing, the adhesive film is The present invention relates to a method for protecting a semiconductor wafer, characterized in that the adhesive film is irradiated with light before being peeled off.
この発明の保護方法によれば、使用する感圧性接着フィ
ルムの接着力を研摩後の剥離作業性を考慮せずに充分な
大きさとすることができるため、この接着フィルムは、
研摩時にはウェハの表面状態にかかわらずウェハ表面に
良好に接着してずぐれた保護機能を発揮することができ
る。According to the protection method of the present invention, the adhesive force of the pressure-sensitive adhesive film used can be made sufficiently large without considering the peeling workability after polishing.
During polishing, it adheres well to the wafer surface regardless of the surface condition of the wafer and exhibits an excellent protective function.
−万、研摩後には、この接着フィルムの支持体側から光
照射し感圧性接着剤層を硬化させて三次元網状化させる
ことにより、この接着剤層は、凝集力が−に昇し、これ
にともない粘着性をほとんど失うため、接着フィルムの
ウェハ表面に対する接着力は大幅に低下する。このため
、ウェハの表面状態にかかわりなくこの接着フィルムの
剥離を容易に行うことができる。After polishing, the adhesive film is irradiated with light from the support side to harden the pressure-sensitive adhesive layer and form a three-dimensional network, which increases the cohesive force of the adhesive layer to - As a result, the adhesion of the adhesive film to the wafer surface is significantly reduced. Therefore, the adhesive film can be easily peeled off regardless of the surface condition of the wafer.
このように、この発明の半導体ウェハの保護力法によれ
ば、ウェハの表面状態にかかわりなくすくれた保護効果
が得られるとともに研摩後の感圧性接着フィルムの剥１
１１Ｆ作業性にもすぐれている。As described above, according to the method for protecting semiconductor wafers of the present invention, a strong protective effect can be obtained regardless of the surface condition of the wafer, and the pressure-sensitive adhesive film can be peeled off after polishing.
11F Excellent workability.
この発明の方法において用いる感圧性接着フィルムを構
成する光透過性の支持体としては、ポリ塩化ビニル、ポ
リエチレンテレフタレート、ポリエチレン、ポリプロピ
レンなどのプラスチックフィルムが挙けられる。このフ
ィルムの厚みとしては通常１０〜１００ ｆｉ７７１程
度とするのがよい。Examples of the light-transmissive support constituting the pressure-sensitive adhesive film used in the method of the present invention include plastic films such as polyvinyl chloride, polyethylene terephthalate, polyethylene, and polypropylene. The thickness of this film is usually about 10 to 100 fi771.
この光透過性の支持体」二に設けられた光照射により硬
化し三次元網状化する性質を有する感圧性接着剤層は、
たとえば通常のゴム系あるいはアクリル系の感圧性接着
剤に分子中に少なくとも２個の光重合性炭素−炭素二重
結合を有する低分子量化合物（以下、光重合性化合物と
いう）および光重合開始剤が配合されてなる感圧性接着
剤組成物を用いて形成される。The pressure-sensitive adhesive layer provided on this light-transmitting support and having the property of curing and forming a three-dimensional network by irradiation with light is
For example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule (hereinafter referred to as a photopolymerizable compound) and a photopolymerization initiator are added to an ordinary rubber-based or acrylic-based pressure-sensitive adhesive. It is formed using a pressure-sensitive adhesive composition.
上記のゴム系あるいはアクリル系の感圧性接着剤は、天
然ゴム、各種の合成ゴムなどのゴム系ポリマーあるいは
ポリ（メタ）アクリル酸アルキルエステル、（メタ）ア
クリル酸アルキルエステルとこれと共重合可能な他の不
飽和単量体との共重合物などのアクリル系ポリマーをベ
ースポリマーとし、これに必要に応じてポリイソシアネ
ート化合物、アルキルエーテル化メラミン化合物の如き
架橋剤などが配合されたものである。なお、」１記のベ
ースポリマーが分子内に光重合性炭素−炭素二重結合を
持つものであってもよい。The above rubber-based or acrylic-based pressure-sensitive adhesives can be copolymerized with rubber-based polymers such as natural rubber and various synthetic rubbers, poly(meth)acrylic acid alkyl esters, and (meth)acrylic acid alkyl esters. The base polymer is an acrylic polymer such as a copolymer with other unsaturated monomers, and a crosslinking agent such as a polyisocyanate compound or an alkyl etherified melamine compound is blended therein as necessary. In addition, the base polymer described in item 1 may have a photopolymerizable carbon-carbon double bond in the molecule.
−上記の光重合性化合物は、その分子量が通常１０．０
００以下程度であるのがよく、より好ましくは、光照射
による感圧性接着剤層の三次元網状化が効率よくなされ
るように、その分子量が５．０（１０以下でかつ分子内
の光重合性炭素−炭素二重結合の数が２〜６個のものを
用いるのがよい。-The above photopolymerizable compound usually has a molecular weight of 10.0.
The molecular weight is preferably about 0.00 or less, and more preferably, the molecular weight is 5.0 (10 or less and intramolecular photopolymerization is It is preferable to use one having 2 to 6 carbon-carbon double bonds.
このようなとくに好ましい光重合性化合物としては、例
えばトリメチロールプロパントリアクリレート、テトラ
メチロールメタンテトラアクリレート、ペンタエリスリ
トールトリアクリレート、ペンタエリスリトールテトラ
アクリレート、ジペンタエリスリト−ルモノヒドロキシ
ペンタアクリレート、ジペンタエリスリトールへキサア
クリレートなどが挙けられる。また、その他の光重合性
化合物としては、１・４−ブチレングリコールジアクリ
レート、１・６〜ヘキサンジオールジアクリレート、ポ
リエチレングリコールジアクリレート、市販のオリゴエ
ステルアクリレートなどが挙げられる。Such particularly preferred photopolymerizable compounds include, for example, trimethylolpropane triacrylate, tetramethylolmethanetetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, and dipentaerythritol hexacrylate. Examples include acrylate. Other photopolymerizable compounds include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, and commercially available oligoester acrylate.
光重合性化合物としては、」１記の化合物のうちの］種
を単独で用いてもよいし２種以上を併用してもよく、そ
の使用量は、通常」１記のベースポリマー１００重量部
に対して１〜１００重量部の範囲とするのがよい。この
使用量が少なすぎると、感圧性接着剤層の光照射による
三次元網状化が不充分となり、感圧性接着フィルムの接
着力の低下の程度が小さすぎて好ましくない。また、こ
の使用量が多すぎると、感圧性接着剤層の可塑化が著し
く半導体ウェハ研摩時に必要な接着力が得られないため
好ましくない。As the photopolymerizable compound, one of the compounds described in ``1'' may be used alone or two or more types may be used in combination, and the amount used is usually 100 parts by weight of the base polymer described in ``1. The amount is preferably in the range of 1 to 100 parts by weight. If the amount used is too small, the three-dimensional network formation of the pressure-sensitive adhesive layer by light irradiation will be insufficient, and the degree of decrease in the adhesive strength of the pressure-sensitive adhesive film will be too small, which is not preferable. Furthermore, if the amount used is too large, the pressure-sensitive adhesive layer will become significantly plasticized, making it impossible to obtain the adhesive force necessary for polishing a semiconductor wafer, which is not preferable.
上記の光重合開始剤としては、例えはインプロピルベン
ゾインエーテル、インブチルベンゾインエーテル、ヘン
シフエノン、ミヒラー氏ケトン、クロロチオキサントン
、ドデシルチオキサントン、ジメチルチオキサントン、
ジエチルチオキサントン、アセトフェノンジエチルケタ
ール、ベンンルジメチルケタール、α−ヒドロキシシク
ロへキシルフェニルケトン、２−ヒドロキシメチルフェ
ニルプロパンなどが挙げられ、これらのうちの１種を単
独であるいは２種以上の混合で使用すれはよい。Examples of the above photopolymerization initiators include inpropyl benzoin ether, inbutyl benzoin ether, hensifhenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone,
Examples include diethylthioxanthone, acetophenone diethyl ketal, benzene dimethyl ketal, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethylphenylpropane, etc., and one of these may be used alone or in a mixture of two or more. Yes.
この光重合開始剤の使用量としては、通常−上記のベー
スポリマー１００重量部に対して０１〜５重量部の範囲
とするのがよい。この使用量が少なすぎると、感圧性接
着剤層の光照射による三次元網状化が不充分となり、感
圧性接着フィルムの接着力の低下の程度が小さすぎて好
ましくない。また、この使用量が多すぎるとそれに見合
う効果が得られないばかりか、ウェハの表面にこの光重
合開始剤が残留するため好ましくない。なお、必要に応
じてこの光重合開始剤とともにトリエチルアミン、テト
ラエチルペンタアミン、ジメチルアミノエタノールなど
のアミン化合物を光重合促進剤として併用してもよい。The amount of the photopolymerization initiator to be used is usually in the range of 0.1 to 5 parts by weight per 100 parts by weight of the above-mentioned base polymer. If the amount used is too small, the three-dimensional network formation of the pressure-sensitive adhesive layer by light irradiation will be insufficient, and the degree of decrease in the adhesive strength of the pressure-sensitive adhesive film will be too small, which is not preferable. Moreover, if the amount used is too large, not only the corresponding effect will not be obtained, but also the photopolymerization initiator will remain on the surface of the wafer, which is not preferable. Note that, if necessary, an amine compound such as triethylamine, tetraethylpentamine, dimethylaminoethanol, etc. may be used together with this photopolymerization initiator as a photopolymerization accelerator.
上記の各成分が混合されてなる感圧性接着剤組成物を用
いて感圧性接着剤層を形成するには、」−記の光透過性
の支持体上にこの組成物を塗布し、必要に応じて加熱す
ればよい。このようにして形成される感圧性接着剤層の
厚ろとしては通常５〜１００μｍであるのがよい。In order to form a pressure-sensitive adhesive layer using a pressure-sensitive adhesive composition formed by mixing the above-mentioned components, this composition is coated on a light-transmitting support as described in "-", and the necessary You can heat it accordingly. The thickness of the pressure-sensitive adhesive layer formed in this way is usually 5 to 100 μm.
また、この感圧性接着剤層は、通常１００％モジュラス
（２０°Ｃ）が１ＯＫｙ ／ ｃｒｌ以下であるのかよ
く、また、通常はトルエンに２４時間浸漬してめたゲル
分率が５５重ｉ％未満でゲルの膨潤度が２０倍以」−で
あるのがよい。In addition, this pressure-sensitive adhesive layer usually has a 100% modulus (at 20°C) of 1 OKy/crl or less, and usually has a gel fraction of 55% by weight after being immersed in toluene for 24 hours. It is preferable that the degree of swelling of the gel is less than 20 times.
この発明の半導体ウェハの保護方法は、上記の光透過性
の支持体と感圧性接着剤層とからなる感圧性接着フィル
ムを用いて行う。この方法においては、まず、ＩＣ素子
の形成を終えた半導体ウェハ表面に上記の感圧性接着フ
ィルムを貼り何けたのち、ウェハの裏面の研摩を行う。The semiconductor wafer protection method of the present invention is carried out using a pressure-sensitive adhesive film comprising the above-described light-transmissive support and a pressure-sensitive adhesive layer. In this method, first, the pressure-sensitive adhesive film described above is pasted on the surface of a semiconductor wafer on which IC elements have been formed, and then the back surface of the wafer is polished.
研摩後、接着フィルムの支持体側から高圧水銀ランプ、
超高圧水銀ランプなどにより、１８０〜４６０ｎｍの波
長の光を通常２〜１８０秒間程度照射し、次いでこの接
着フィルムをウェハ表面から剥離する。After polishing, a high pressure mercury lamp is applied from the support side of the adhesive film.
Light with a wavelength of 180 to 460 nm is normally irradiated for about 2 to 180 seconds using an ultra-high pressure mercury lamp or the like, and then the adhesive film is peeled off from the wafer surface.
上記の感圧性接着フィルムの半導体ウェハ表面に対する
１８０剥離接着力（剥離速度３００ ｍｍ ／分）は、
光照射前には通常２００〜１０００ｙ／２０ｍ１〃であ
る。このため、ウェハの研摩時には、この接着フィルム
はウェハ表面に良好に接着しており、しかもこの接着フ
ィルムがクッションとしても有効に機能するのでウェハ
の破損やウェハ表面の傷の発生を効果的に防止すること
ができる。また、接着フィルムとウェハ表面との接着が
良好でこの間に研摩時の洗浄水が侵入することがなく研
摩によるウェハの厚み精度も安定的にすぐれたものとす
ることができる。The 180 peel adhesion force (peel speed 300 mm/min) of the above pressure-sensitive adhesive film to the semiconductor wafer surface is:
It is usually 200 to 1000y/20m1 before light irradiation. Therefore, when polishing a wafer, this adhesive film adheres well to the wafer surface and also functions effectively as a cushion, effectively preventing wafer damage and scratches on the wafer surface. can do. Further, the adhesion between the adhesive film and the wafer surface is good, and cleaning water during polishing does not enter during this period, so that the thickness accuracy of the wafer by polishing can be stably improved.
一方、−１−記の接着フィルムは光照射されると、この
フィルムにおける感圧性接着剤層において、光重合性化
合物どうしが重合するとともにベースポリマーにもラジ
カルが発生してこのポリマーと光重合性化合物とが反応
することにより、接着剤層は硬化し三次元網状化する。On the other hand, when the adhesive film described in -1- is irradiated with light, the photopolymerizable compounds polymerize with each other in the pressure-sensitive adhesive layer of this film, and radicals are generated in the base polymer, causing the photopolymerizable By reacting with the compound, the adhesive layer is cured and becomes a three-dimensional network.
なお、ここでいう三次元網状化とは、通常、接着剤層を
トルエンに２４時間浸漬してめたゲル分率が光照射前の
約１４倍以−１＝となり、かっこのゲル分率が５５重量
％以」−となるこまを意味する。Note that the three-dimensional reticulation referred to here usually means that the gel fraction obtained by immersing the adhesive layer in toluene for 24 hours is about 14 times or more than before light irradiation, and the gel fraction in parentheses is 55% by weight or more.
また、光照射後の接着剤層は上記と同様にしてめたケル
の膨潤度か通常１８倍以下となるのがよい、、
このように三次元網状化することにより、接着剤層の凝
集力は光照射前に比べて著しく上昇し、通常１．００％
モジ−ｔラス（２０”ｃ）が２０ Ｋｇ／ ｏａ以」−
となる。これにともない接着剤層の粘着性はほとんど失
われて、接着フィルムの接着力は大幅に低下し、このと
きの半導体ウェハ表面に対する１８０剥離接着力（剥離
速度３００ｍｎｒ１分）は通常１５０ ｙ／ ２０ ＋
＃ｍ以下となる。このため、ウェハの表面状態にかかわ
りなく接着フィルムのウェハ表面からの剥離を容易に行
うことができる。In addition, the adhesive layer after irradiation with light should have a swelling degree that is normally 18 times or less than the swelling degree of the resin melted in the same manner as above.By forming a three-dimensional network in this way, the cohesive strength of the adhesive layer can be increased. significantly increases compared to before light irradiation, usually 1.00%
Moji-T Las (20”c) is 20 Kg/oa or more”-
becomes. As a result, the tackiness of the adhesive layer is almost lost, and the adhesive strength of the adhesive film is significantly reduced. At this time, the 180 peel adhesive force (peeling speed 300 mnr 1 minute) to the semiconductor wafer surface is usually 150 y/20 +
#m or less. Therefore, the adhesive film can be easily peeled off from the wafer surface regardless of the surface condition of the wafer.
以下にこの発明の実施例を記載する。なｔ１以下におい
て部とあるのは重量部を意味する。Examples of this invention will be described below. When t1 or less, parts mean parts by weight.
実施例１
アクリル酸ブチル１００部、アクリロニトリル５部およ
びアクリル酸５部からなる配合組成物をトルエン中で共
重合させて、数平均分子量３００．０００のアクリル系
共重合物を得た。Example 1 A blended composition consisting of 100 parts of butyl acrylate, 5 parts of acrylonitrile, and 5 parts of acrylic acid was copolymerized in toluene to obtain an acrylic copolymer having a number average molecular weight of 300.000.
この共重合物１００部にポリイソシアネート化合物（日
本ポリウレタン社製商品名コロネートＬ）５部、ジペン
タエリスリトールモノヒドロキシペンタアクリレート１
５部およびα−ヒドロキシシクロへキシルフェニルケト
ン１部を添加し混合して感圧性接着剤組成物を調製した
。To 100 parts of this copolymer, 5 parts of a polyisocyanate compound (product name Coronate L manufactured by Nippon Polyurethane Co., Ltd.), 1 part of dipentaerythritol monohydroxypentaacrylate
5 parts and 1 part of α-hydroxycyclohexylphenyl ketone were added and mixed to prepare a pressure sensitive adhesive composition.
この組成物を５０１部ｍの厚みのポリエチレンテレツク
レートフィルムの片面に接着剤層の厚みが３０μｍとな
るように塗工し、１３０°Ｃで３分間加熱して感圧性接
着フィルムを得た。This composition was coated on one side of a 501 part m thick polyethylene terrestrial film so that the adhesive layer had a thickness of 30 μm, and heated at 130° C. for 3 minutes to obtain a pressure-sensitive adhesive film.
この接着フィルムをＩＣ素子の形成された直径５インチ
の大きさで厚みが０．５ ｍｍの半導体ウェハの表面に
貼り付けたのち、このウェハの裏面を常法により研摩し
た。この研摩時にウェハが割れたり欠けたりすることが
なくウェハ表面にも傷が付かなかった。また、ウェハと
接着フィルムの間に水が侵入することもなかった。This adhesive film was attached to the front surface of a semiconductor wafer having a diameter of 5 inches and a thickness of 0.5 mm on which IC elements were formed, and then the back surface of the wafer was polished by a conventional method. During this polishing, the wafer did not crack or chip, and the wafer surface was not damaged. Furthermore, no water entered between the wafer and the adhesive film.
研摩後、上記の接着フィルムのポリエチレンテレフタレ
ートフィルム側から高圧水銀ランプ（４０Ｗ／ｃ＋ｎ）
で１５ｃｍの距離から２０秒間光照射したのち、接着フ
ィルムを剥離した。この剥離は極めて容易に行え、ウェ
ハ表面への感圧性接着剤層の移行も全く認められなかっ
た。また、研摩後のウェハの厚みは０．２５ ｖｎで全
体的に均一な厚みであった。After polishing, apply a high pressure mercury lamp (40W/c+n) from the polyethylene terephthalate film side of the above adhesive film.
After irradiating with light for 20 seconds from a distance of 15 cm, the adhesive film was peeled off. This peeling was extremely easy, and no transfer of the pressure-sensitive adhesive layer to the wafer surface was observed. The thickness of the wafer after polishing was 0.25 vn, which was uniform throughout.
実施例２
アクリル系共重合物（実施例１と同じもの）１００部に
ポリイソシアネ−１・化合物（実施例１と同じもの）５
部、ペンタエリ、スリトールトリアクリレート２０部お
よびインブチルベンゾインエーテル０５部を添加し混合
して感圧性接着剤組成物を調製した。この組成物を用い
て実施例１と同様にして感圧性接着フィルムを作製した
。Example 2 100 parts of acrylic copolymer (same as in Example 1) and 5 parts of polyisocyanate-1 compound (same as in Example 1)
A pressure-sensitive adhesive composition was prepared by adding and mixing 20 parts of pentaeri, slitol triacrylate, and 05 parts of inbutylbenzoin ether. A pressure-sensitive adhesive film was produced in the same manner as in Example 1 using this composition.
この接着フィルムを実施例１と同様の半導体つエバの表
面に貼り付けたのち、このウェハの裏面を研摩した。こ
の研摩後上記の接着フィルムに実施例１と同様に光照射
したのち、接着フィルムを剥離した。上記の研摩時のウ
ェハの保護は実施例１と同様に良好に行え、また剥離作
業性も良好でウェハ表面にのり残りも認められなかった
。また、研摩後のウェハの厚みは０２５朋で全体的に均
一な厚みであった。After this adhesive film was attached to the surface of the same semiconductor wafer as in Example 1, the back surface of this wafer was polished. After this polishing, the adhesive film was irradiated with light in the same manner as in Example 1, and then the adhesive film was peeled off. The wafer was well protected during the above polishing as in Example 1, and the peeling workability was also good, with no residue left on the wafer surface. The thickness of the wafer after polishing was 0.25 mm, which was uniform throughout.
比較例１
ジペンタエリスリトールモノヒドロキシペンタアクリレ
ート１５部およびα−ヒドロキシンクロへキシルフェニ
ルケトン１部を使用しなかった以外は実施例１と同様に
して感圧性接着剤組成物を調製し、この組成物を用いて
実施例１と同様にして感圧性接着フィルムを作製した。Comparative Example 1 A pressure-sensitive adhesive composition was prepared in the same manner as in Example 1 except that 15 parts of dipentaerythritol monohydroxypentaacrylate and 1 part of α-hydroxychlorohexylphenyl ketone were not used, and this composition A pressure-sensitive adhesive film was produced in the same manner as in Example 1 using the following.
この接着フィルムを実施例１と同様の半導体ウェハの表
面に貼り付けたのち、このウェハの裏面を研摩したとこ
ろ実施例１と同様に良好にウェハの保護が行えた。研摩
後、この接着フィルムをウェハ表面から剥離しようとし
たところ、接着フィルムとウェハとの接着が強固で剥離
できなかった。After this adhesive film was attached to the surface of a semiconductor wafer similar to that in Example 1, the back surface of this wafer was polished, and as in Example 1, the wafer was successfully protected. After polishing, when an attempt was made to peel the adhesive film from the wafer surface, the bond between the adhesive film and the wafer was strong and could not be peeled off.
次に、この接着フィルムのポリエチレンテレフタレート
フィルム側から実施例１と同様に光照射したのち、接着
フィルムを剥離しようとしたところ、上記の場合と同様
に剥離が困難であったか、さらに強力に剥離しようとし
たところウェハが破損した。Next, after light was irradiated from the polyethylene terephthalate film side of this adhesive film in the same manner as in Example 1, when the adhesive film was tried to be peeled off, it was found that it was difficult to peel off as in the above case, or even when trying to peel it off more forcefully. As a result, the wafer was damaged.
比較例２
アクリル系共重合物（実施例１と同じもの）１００部に
ポリイソシアネート化合物（実施例１と同じもの）１０
部を添加し混合して感圧性接着剤組成物を調製し、この
組成物を５０１部ｍの厚みのポリエチレンテレフタレー
トフィルムの片面に接着剤層の厚みが１０μ７１１とな
るように塗工し、１３０°Ｃで３分間加熱して感圧性接
着フィルムを作製した。Comparative Example 2 100 parts of an acrylic copolymer (same as in Example 1) and 10 parts of a polyisocyanate compound (same as in Example 1)
A pressure sensitive adhesive composition was prepared by adding and mixing 501 parts of this composition to one side of a polyethylene terephthalate film having a thickness of 501 parts, so that the thickness of the adhesive layer was 10μ711. A pressure-sensitive adhesive film was prepared by heating at C for 3 minutes.
この接着フィルムを実施例１と同様の半導体ウェハの表
面に貼り付けたのち、このウェハの裏面を常法により研
摩したところ、このウェハと接着フィルムとの間の接着
が不充分でこの間に洗浄水が侵入した。After this adhesive film was attached to the surface of the same semiconductor wafer as in Example 1, the back side of this wafer was polished by a conventional method. has invaded.
研摩後、接着フィルムのウェハ表面からの剥離は容易に
行えたが、研摩時の水の侵入により研摩後のウェハの厚
みは０．２４〜０．２６ ａｍと不均一であった。After polishing, the adhesive film could be easily peeled off from the wafer surface, but the thickness of the wafer after polishing was uneven, ranging from 0.24 to 0.26 am, due to water intrusion during polishing.
試験例
〈】８０剥離接着力〉
」１記の実施例１，２および比較例１．２で得られた感
圧性接着フィルムの半導体ウェハ表面に対する１８０°
剥１１［接着力（剥離速度３００關／分）を測定した。Test Example〈Peel Adhesion Strength〉 180° to the semiconductor wafer surface of the pressure-sensitive adhesive films obtained in Examples 1 and 2 and Comparative Example 1.2 in 1.
Peeling 11 [Adhesive strength (peel speed 300/min) was measured.
また、上記の接着フィルムを半導体ウェハに貼り付けて
ポリエチレンテレフタレートフィルム側から高圧水銀ラ
ンプ（４０Ｗ／ｃｍ）で１５側の距離から２０秒間光照
射したのち、上記の接着力を測定した。Further, the adhesive film described above was attached to a semiconductor wafer and the polyethylene terephthalate film side was irradiated with light for 20 seconds from a distance on the 15 side using a high-pressure mercury lamp (40 W/cm), and then the adhesive strength described above was measured.
〈１００％モジュラス〉
−１−記の実施例１，２および比較例Ｆ、２で用いた感
圧性接着剤組成物をそれぞれ剥離処理を施した５０μ７
ｎの厚みのポリエチレンテレフタレートフィルムの表面
に厚みが１０μｎｔとなるように塗工し、１：（０°Ｃ
で３分間乾燥したのち５０ｍ＋＋＋Ｘ５０ ｍｍの大き
さに切断し棒状にまるめることにより断面積が０．５
ｍＪの糸状の試験片を得た。この試験片について２０°
Ｃにおける１００％モジュラスを測定した。また、この
試験片に」１記と同様の条件で光照射したのち、同様の
１００％モジュラスを測定した。<100% modulus> 50μ7 obtained by subjecting the pressure-sensitive adhesive compositions used in Examples 1 and 2 and Comparative Examples F and 2 described in -1- to a peeling treatment, respectively.
It was coated on the surface of a polyethylene terephthalate film with a thickness of n to a thickness of 10 μnt, and
After drying for 3 minutes at
A filamentous test piece of mJ was obtained. 20° for this specimen
The 100% modulus at C was measured. In addition, this test piece was irradiated with light under the same conditions as in Section 1, and then the same 100% modulus was measured.
〈ゲル分率、ゲルの膨潤度〉
上記の感圧性接着剤組成物をそれぞれ１（）０％モジュ
ラス用試験片の場合と同様にして塗工、乾燥を行ったの
ち、５０ ｍｍ Ｘ ５０ ノＩｕｔの大きさに切断し
たものを試験片とした。この試験片をトルエンに２４時
間浸漬してゲル分率とゲルの膨潤度を調べた。また、こ
の試験片に上記と同様の条件で光照射したのち、これを
トルエンに２４時間浸漬してゲル分率とゲルの膨潤度を
調べた。<Gel fraction, gel swelling degree> The above pressure-sensitive adhesive compositions were applied and dried in the same manner as in the case of the 1()0% modulus test piece, and then a 50 mm x 50 mm test piece was coated and dried. A test piece was cut into a size of . This test piece was immersed in toluene for 24 hours, and the gel fraction and gel swelling degree were examined. In addition, this test piece was irradiated with light under the same conditions as above, and then immersed in toluene for 24 hours to examine the gel fraction and swelling degree of the gel.
」１記の試験結果を下記の表に示した。なお、下記の表
においてＡ欄は光照射前の測定値を示し、Ｂ欄は光照射
後の測定値を示す。The results of the test described in item 1 are shown in the table below. In the table below, column A shows the measured values before light irradiation, and column B shows the measured values after light irradiation.
上記の実施例および比較例から明らかなように、この発
明の半導体ウェハの保護方法によれば、ウェハの研摩時
には、感圧性接着フィルムとウェハとを強固に接着させ
ることができるため、ウェハの表面状態にかかわりなく
ウェハの保護を効果的に行え、しかも研摩後には、上記
の接着フィルムの支持体側から光照射することによりウ
ェハ表面からの接着フィルムの剥離を極めて容易に行え
る。As is clear from the above Examples and Comparative Examples, according to the semiconductor wafer protection method of the present invention, the pressure-sensitive adhesive film and the wafer can be firmly bonded during wafer polishing, so that the wafer surface The wafer can be effectively protected regardless of its condition, and after polishing, the adhesive film can be peeled off from the wafer surface extremely easily by irradiating light from the support side of the adhesive film.
また、このように接着フィルムの剥離を容易に行えるの
は、接着フィルムの（感圧性接着剤層が光照射により三
次元網状化して凝集力が著しく上昇し、これにともない
接着フィルムの半導体ウェハ表面に対する接着力が大幅
に低下するためであることがわかる。In addition, the adhesive film can be easily peeled off in this way because the pressure-sensitive adhesive layer of the adhesive film forms a three-dimensional network when exposed to light, and its cohesive force increases significantly. It can be seen that this is because the adhesive force against
特許出願人 日東電気］二業株式会社Patent applicant: Nitto Electric Co., Ltd.
Claims (1)
ェハの表面に感圧性接着フィルムを貼り付け、」−記の
研摩後この接着フィルムを剥離する半導体ウェハの保護
方法において、上記の感圧性接着フィルムが光透過性の
支持体とこの支持体上に設けられた光照射により硬化し
三次元網状化する性質を有する感圧性接着剤層とからな
り、研摩後この接着フィルムを剥離する前にこの接着フ
ィルムに光照射することを特徴とする半導体ウェハの保
護方法。 （２）感圧性接着フィルムが光照射前には半導体ウェハ
表面に対して２００〜１．０００９７２０ｍｍの１８
（１’剥離接着力を有し、光照射後にはこの（３） 感
圧性接着剤層がベースポリマー１００重量部、分子内に
光重合性炭素−炭素二重結合を少なくとも２個有する低
分子量化合物１〜１００重量部および光重合開始剤０．
１〜５重量部を必須成分として含む感圧性接着剤組成物
を塗工して設けられた特許請求の範囲第（２）項記載の
半導体ウェハの保護方法。 （４）感圧性接着剤層が光照射によりそのゲル分率が５
５重量％以上でかつ光照射前のゲル分率の１．４倍以−
ヒとなる特許請求の範囲第（３）項記載の半導体ウェハ
の保護方法。[Scope of Claims] (1) A method for protecting a semiconductor wafer, which comprises attaching a pressure-sensitive adhesive film to the front surface of the wafer when polishing the back surface of the semiconductor wafer, and peeling off the adhesive film after polishing, The above-mentioned pressure-sensitive adhesive film consists of a light-transmitting support and a pressure-sensitive adhesive layer provided on the support that has the property of curing and forming a three-dimensional network when irradiated with light, and after polishing, the adhesive film is A method for protecting a semiconductor wafer, which comprises irradiating the adhesive film with light before peeling it off. (2) Before the pressure-sensitive adhesive film is irradiated with light, the distance between the surface of the semiconductor wafer and the surface of the semiconductor wafer is 200 to 1.0009720 mm.
(1' Peel adhesive strength, and after irradiation with light, this (3) pressure-sensitive adhesive layer is made of a base polymer of 100 parts by weight and a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in the molecule. 1 to 100 parts by weight and 0.0 parts by weight of a photopolymerization initiator.
A method for protecting a semiconductor wafer according to claim (2), which is provided by coating a pressure-sensitive adhesive composition containing 1 to 5 parts by weight as an essential component. (4) When the pressure-sensitive adhesive layer is irradiated with light, its gel fraction decreases to 5.
5% by weight or more and 1.4 times or more of the gel fraction before light irradiation.
A method for protecting a semiconductor wafer according to claim (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59047742A JPH0630353B2 (en) | 1984-03-12 | 1984-03-12 | Method of protecting semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59047742A JPH0630353B2 (en) | 1984-03-12 | 1984-03-12 | Method of protecting semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60189938A true JPS60189938A (en) | 1985-09-27 |
| JPH0630353B2 JPH0630353B2 (en) | 1994-04-20 |
Family
ID=12783803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59047742A Expired - Lifetime JPH0630353B2 (en) | 1984-03-12 | 1984-03-12 | Method of protecting semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630353B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6469013A (en) * | 1987-09-10 | 1989-03-15 | Fujitsu Ltd | Grinding method |
| JPH0532946A (en) * | 1991-07-31 | 1993-02-09 | Lintec Corp | Releasable tacky adhesive polymer |
| US6159827A (en) * | 1998-04-13 | 2000-12-12 | Mitsui Chemicals, Inc. | Preparation process of semiconductor wafer |
| US6235387B1 (en) | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
| US6273791B1 (en) | 1997-11-18 | 2001-08-14 | Mitsui Chemicals, Inc. | Method of producing semiconductor wafer |
| US7201969B2 (en) | 2002-03-27 | 2007-04-10 | Mitsui Chemicals, Inc. | Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film |
| EP1895581A2 (en) * | 2006-08-29 | 2008-03-05 | Nitto Denko Corporation | Method of semiconductor wafer back processing, method of substrate back processing, and radiation-curable pressure-sensitive adhesive sheet |
| US7935424B2 (en) | 2006-04-06 | 2011-05-03 | Lintec Corporation | Adhesive sheet |
| JP2012072367A (en) * | 2010-08-30 | 2012-04-12 | Sumitomo Bakelite Co Ltd | Heat-decomposable resin composition and substrate |
| JP2012177084A (en) * | 2011-01-31 | 2012-09-13 | Dainippon Printing Co Ltd | Heat-resistant temporary adhesive composition and heat-resistant temporary adhesive tape |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745929A (en) * | 1980-09-02 | 1982-03-16 | Nec Corp | Grinding method for semiconductor wafer |
| JPS5850164A (en) * | 1981-09-19 | 1983-03-24 | Nippon Steel Corp | Continuous casting installation |
| JPS58121644A (en) * | 1982-01-12 | 1983-07-20 | Mitsubishi Electric Corp | Regulating method for thickness of semiconductor wafer |
| JPS5921038A (en) * | 1982-07-27 | 1984-02-02 | Nec Home Electronics Ltd | Releasing method for pellet |
-
1984
- 1984-03-12 JP JP59047742A patent/JPH0630353B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745929A (en) * | 1980-09-02 | 1982-03-16 | Nec Corp | Grinding method for semiconductor wafer |
| JPS5850164A (en) * | 1981-09-19 | 1983-03-24 | Nippon Steel Corp | Continuous casting installation |
| JPS58121644A (en) * | 1982-01-12 | 1983-07-20 | Mitsubishi Electric Corp | Regulating method for thickness of semiconductor wafer |
| JPS5921038A (en) * | 1982-07-27 | 1984-02-02 | Nec Home Electronics Ltd | Releasing method for pellet |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6469013A (en) * | 1987-09-10 | 1989-03-15 | Fujitsu Ltd | Grinding method |
| JPH0532946A (en) * | 1991-07-31 | 1993-02-09 | Lintec Corp | Releasable tacky adhesive polymer |
| US6273791B1 (en) | 1997-11-18 | 2001-08-14 | Mitsui Chemicals, Inc. | Method of producing semiconductor wafer |
| US6235387B1 (en) | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
| US6478918B2 (en) | 1998-03-30 | 2002-11-12 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
| US6159827A (en) * | 1998-04-13 | 2000-12-12 | Mitsui Chemicals, Inc. | Preparation process of semiconductor wafer |
| US7201969B2 (en) | 2002-03-27 | 2007-04-10 | Mitsui Chemicals, Inc. | Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film |
| US7935424B2 (en) | 2006-04-06 | 2011-05-03 | Lintec Corporation | Adhesive sheet |
| US8178198B2 (en) | 2006-04-06 | 2012-05-15 | Lintec Corporation | Adhesive sheet |
| EP1895581A2 (en) * | 2006-08-29 | 2008-03-05 | Nitto Denko Corporation | Method of semiconductor wafer back processing, method of substrate back processing, and radiation-curable pressure-sensitive adhesive sheet |
| EP1895581A3 (en) * | 2006-08-29 | 2012-05-23 | Nitto Denko Corporation | Method of semiconductor wafer back processing, method of substrate back processing, and radiation-curable pressure-sensitive adhesive sheet |
| JP2012072367A (en) * | 2010-08-30 | 2012-04-12 | Sumitomo Bakelite Co Ltd | Heat-decomposable resin composition and substrate |
| JP2012177084A (en) * | 2011-01-31 | 2012-09-13 | Dainippon Printing Co Ltd | Heat-resistant temporary adhesive composition and heat-resistant temporary adhesive tape |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0630353B2 (en) | 1994-04-20 |
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