JPS60195068A - Ceramic bonding method - Google Patents
Ceramic bonding methodInfo
- Publication number
- JPS60195068A JPS60195068A JP5064384A JP5064384A JPS60195068A JP S60195068 A JPS60195068 A JP S60195068A JP 5064384 A JP5064384 A JP 5064384A JP 5064384 A JP5064384 A JP 5064384A JP S60195068 A JPS60195068 A JP S60195068A
- Authority
- JP
- Japan
- Prior art keywords
- active metal
- active
- film
- layer
- brazing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、セラミックス基板とろう材を接合する方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for joining a ceramic substrate and a brazing material.
近時電子工業においてＸＣに関する技術開発は目覚しく
薄膜１．Ｃ，ＩＶ−膜ＩＣあるいは混成ＩＣのように種
々の形式によって工業化が進み、その中でもセラミック
スの接合技術はすこぶる重要な部分を占めている。一般
に、セラミックスと金属を接合する方法として、活性金
属を用いてセラミックス表面に直接メタライジングする
方法が知られている。この方法は、′ｒｉ、Ｍｏ、Ｚｒ
あるいはＴｔ−Ｃｕ、Ｚｒ−Ｎｉ、ＭＯ−Ｍｎ、Ｍｏ−
ＴｉなどやＴ ｉＨ２＋ Ｚ ｒ Ｈ２などの活性金属
を用いてセラミ、クスと活性金属との間に結合層（セラ
ミックス＋ＭｘＯｙ）を形成させセラミ、７クス上に活
性金属の表面層を形成する方法である。In recent years, technological development regarding XC has been remarkable in the electronics industry. Industrialization is progressing in various forms such as C, IV-membrane ICs and hybrid ICs, and among these, ceramic bonding technology occupies an extremely important part. Generally, as a method of bonding ceramics and metals, a method of directly metallizing the ceramic surface using an active metal is known. This method uses 'ri, Mo, Zr
Or Tt-Cu, Zr-Ni, MO-Mn, Mo-
This is a method in which a bonding layer (ceramics + MxOy) is formed between the ceramic, a glass, and the active metal using an active metal such as Ti or TiH2+ZrH2, and a surface layer of the active metal is formed on the ceramic or glass. be.
従来、このような活性金属表面上にＦ’ｂ＝Ｓｎ系はん
だやＡｇ−Ｃｕ共晶ろうなどを形成しようとすると、活
性金属層に対する溶融はんだや溶融ろうのぬれ性が悪い
ためＮｆやＣｕなどの被膜を形成して溶融はんだ等が活
性金属層へ侵入するのを防止していた。Conventionally, when attempting to form F'b=Sn-based solder or Ag-Cu eutectic solder on the surface of such an active metal, Nf, Cu, etc. A film was formed to prevent molten solder etc. from entering the active metal layer.
しかしながら、従来のこの方法ではセラミックスパンケ
ージ等のシール金属でシール後も活性金属層とろう材層
との間にＮｉ等の中間層が存在するため全体の膜厚が厚
く、小型化、高密度化が図れず、逆にこの膜厚を薄クシ
ようとすると、ろう活性金属とのぬれ性が悪いため、接
合不良を生じたり活性金属表面から脱落不良を生じたり
していた。また、活性金属とセラミックスとの結合層の
接合強度に比しろう材層と中間層との接合強度が低いと
いう欠点があった。However, in this conventional method, even after sealing with a sealing metal such as a ceramic spun cage, an intermediate layer such as Ni exists between the active metal layer and the brazing metal layer, resulting in a thick overall film thickness, resulting in a smaller size and higher density. However, when attempting to reduce the film thickness, the poor wettability with the active metal causes poor bonding or failure of the active metal to fall off the surface of the active metal. Another drawback is that the bonding strength between the brazing material layer and the intermediate layer is lower than the bonding strength between the active metal and the ceramic bonding layer.
本発明は上記欠点に鑑みなされたものであり、ろう材層
を溶融した後に中間層のないろう材を接合する方法を提
供するものである。The present invention has been made in view of the above-mentioned drawbacks, and provides a method for joining brazing filler metals without an intermediate layer after melting the brazing filler metal layer.
本発明はセラミックス基板とろう材を接合する方法にお
いて真空中でセラミックス基板上に活性金属被膜を形成
した後その゛活性金属表面上にろう材に固溶する酸化防
止被膜を形成することを特徴とするセラミックス接合方
法である。The present invention is a method for joining a ceramic substrate and a brazing material, and is characterized by forming an active metal coating on the ceramic substrate in vacuum, and then forming an oxidation-preventing coating on the surface of the active metal, which dissolves in solid solution in the brazing material. This is a method for joining ceramics.
本発明において、酸化防止膜を形成するのは、活性金属
の活性表面状態を薄い酸化膜等を形成することなく活性
状態で保持するためである。すなわち、従来の溶融はん
だ等とのぬれ性の悪さは、活性金属表面の不活性化に起
因することを見い出し、活性状態を維持するため真空中
で酸化防止膜を形成しようとするものである。また、酸
化防止膜を形成したのは、第一にろう材を溶融したとき
瞬時にろう材等の中へ拡散吸収させるためである。In the present invention, the reason why the oxidation prevention film is formed is to maintain the active surface state of the active metal in an active state without forming a thin oxide film or the like. That is, it was discovered that the poor wettability with conventional molten solder etc. is due to the inactivation of the active metal surface, and an attempt was made to form an antioxidant film in a vacuum to maintain the active state. Moreover, the reason why the oxidation-preventing film was formed is firstly to allow the brazing material to be instantly diffused and absorbed into the brazing material etc. when it is melted.
拡散吸収させることにより活性金属の活性面が溶融ろう
と直接接することができる。第２の理由は酸化防止膜が
強固に活性金属と接合している接合面を利用して溶融ろ
う等の接合強度を高めようとするものである。したがっ
て、被膜の厚さとして活性面を酸化等非活性にさせない
厚さが必要であり、使用するろう材量等に全溶する量以
下の被膜層の厚さが必要である。実用上は０．０１μｍ
〜１００μ更の範囲が好ましい。また被膜の種類として
は、はんだを使用する場合は、Ｃｕ ＋’ Ｎ ｒ−＋
Ｆ ｅ等の元素のものが使用でき、Ａｇ−Ｃｕ共晶合
金を使用する場合にはＡｇ、Ｃｕ、Ｎｉ、Ｆｅ＋ Ｍｏ
等のものが使用できる。酸化防止膜を強固に活性金属表
面に接合するにはイオンブレーティング法、特に高周波
コイル又は熱電子放射によるものが好ましい。これは金
属蒸気がイオン化され、より活性になって接合面を形成
するからである。Diffusion absorption allows the active surface of the active metal to come into direct contact with the molten solder. The second reason is to increase the bonding strength of molten solder or the like by utilizing the bonding surface where the anti-oxidation film is firmly bonded to the active metal. Therefore, the thickness of the coating must be such that the active surface is not rendered inactive by oxidation, etc., and the thickness of the coating layer must be equal to or less than the amount that completely dissolves in the amount of brazing material used. Practically 0.01μm
A range of 100μ or more is preferred. In addition, as for the type of coating, when using solder, Cu +' N r-+
Elements such as Fe can be used, and when using Ag-Cu eutectic alloy, Ag, Cu, Ni, Fe + Mo
etc. can be used. In order to firmly bond the anti-oxidation film to the active metal surface, it is preferable to use an ion-blating method, particularly one using a high-frequency coil or thermionic radiation. This is because the metal vapor becomes ionized and becomes more active, forming a bonding surface.
以下、実施例および従来例について説明する。Examples and conventional examples will be described below.
容器内を１Ｏ−５Ｔｏｒｒに保ちイオンを加速させる為
の基板を設け、−１０００Ｖを印加させ、その基板の表
面に薄膜形成用の幅２５鶴×長さ２５鶴×厚さ０．２鰭
のアルミナ基板を固定し、るつぼより’Ｆｉ ；？ｃ溶
解蒸発させその蒸気をＷ電極（５０ＶＸ１０Ａ）でイオ
ン化し、アルミナ基板上に１μｍの活性１゛ｉ被膜を形
成し、その７１ｐ’ｂ−５ｎはんだ用としてＣ，ｕを溶
）Ｗ蒸発させ、イオン化し、１０μｍの酸化防止被膜を
形成し、（アルミナ／ ７Ｉ’ ｉ ／ Ｃｕ ）をえ
た。A substrate was provided to accelerate ions while keeping the inside of the container at 1O-5 Torr, and -1000V was applied to the surface of the substrate to form a thin film of alumina of 25 mm width x 25 mm length x 0.2 mm thickness. Fix the substrate and remove it from the crucible. C, melt and evaporate, and ionize the vapor with a W electrode (50V x 10A) to form a 1μm active 1゛i film on the alumina substrate, and evaporate C and U for the 71p'b-5n solder. It was ionized to form a 10 μm anti-oxidation film, yielding (alumina/7I'i/Cu).
〔従来例１〕
酸化防止板ｎ匁を用いない以外、実施例と同様にして従
来品１ （アルミナ／ Ｔ ｉ ）をえた。[Conventional Example 1] Conventional product 1 (alumina/T i ) was obtained in the same manner as in the example except that the oxidation prevention plate n momme was not used.
〔従来例２〕
実施例と同様のアルミナ基板に０．０５ｍ５のＴｉ・−
４３％Ｃｕ合金箔を載せ、１０００’ｃ Ａ ｒガス雰
囲気中で加熱溶融し、アルミナ基板上にＴｉ−Ｃｕ合金
層を形成した。その後、Ｔｉ−Ｃｕ合金層表面にＣｕを
１０μｍと１００μｍ湿式めっきし、それぞれ従来品２
と従来品３とした。[Conventional Example 2] 0.05 m5 of Ti.-
A 43% Cu alloy foil was placed and melted by heating in a 1000'C Ar gas atmosphere to form a Ti--Cu alloy layer on the alumina substrate. After that, Cu was wet-plated to 10 μm and 100 μm on the surface of the Ti-Cu alloy layer, respectively.
and conventional product 3.
上記実施品および従来品に幅２．５ｍｍ ’＋長さ２．
５鶴、厚さ０．２ｕ＋のＰ ｂ ”＝ Ｓ ｎ共晶はん
だ（試験１）。Width 2.5mm' + length 2.
5. Pb''=Sn eutectic solder with thickness 0.2u+ (Test 1).
Ａ ｇ −Ｃｕ共晶ろう（試験２’）、Ａｕ−３ｎ共晶
ろう（試験３）を載せ、それぞれ２００℃、８００℃。A g -Cu eutectic solder (test 2') and Au-3n eutectic solder (test 3) were placed at 200°C and 800°C, respectively.
３００’Ｃで接合し接合強度を測定したところ下表の結
果をえた。When they were bonded at 300'C and the bonding strength was measured, the results shown in the table below were obtained.
上記表で明らかなように実施品は試験１，２゜３のいず
れにおいても従来品より接合強度が優れていることがわ
かる。また従来品２は実施品にあわせてはんだ又はろう
中にＣｕ層のＣｕを拡散させたものであるが、Ｔ ｉ
−Ｃｕ活性金属表面の活性面が失われているため従来品
３より弱いものとなっていた。As is clear from the above table, the joint strength of the implemented product was superior to the conventional product in both Tests 1 and 2°3. In addition, conventional product 2 has Cu in the Cu layer diffused in solder or brazing material in accordance with the implemented product, but Ti
-Cu Since the active surface of the active metal surface was lost, it was weaker than Conventional Product 3.
以上詳述したように本発明によれば、活性金属層を形成
した後活性面を維持した状態で酸化防止膜が形成されて
いるので接着強度が強く、しかも従来法に比し薄い被膜
を形成することができるので、小型化、高密度化を図る
ことができるとし）う効果がある。As detailed above, according to the present invention, after forming the active metal layer, the oxidation-preventing film is formed while maintaining the active surface, resulting in strong adhesive strength and a thinner film than in the conventional method. This has the effect of making it possible to achieve smaller size and higher density.
出願人 田中資金元工業株式会社Applicant: Tanaka Kingen Kogyo Co., Ltd.
Claims (1)
空中でセラミックス基板上に活性金属被膜を形成した後
その活性金属表面上にろう材に固溶する酸化防止被膜を
形成することを特徴とするセラミックス接合方法。A method for joining a ceramic substrate and a brazing material, which comprises forming an active metal coating on the ceramic substrate in vacuum, and then forming an oxidation-preventing coating on the surface of the active metal, which is dissolved in the brazing material. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5064384A JPS60195068A (en) | 1984-03-16 | 1984-03-16 | Ceramic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5064384A JPS60195068A (en) | 1984-03-16 | 1984-03-16 | Ceramic bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60195068A true JPS60195068A (en) | 1985-10-03 |
| JPH049752B2 JPH049752B2 (en) | 1992-02-21 |
Family
ID=12864627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5064384A Granted JPS60195068A (en) | 1984-03-16 | 1984-03-16 | Ceramic bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60195068A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991016805A1 (en) * | 1990-04-16 | 1991-10-31 | Denki Kagaku Kogyo Kabushiki Kaisha | Ceramic circuit board |
| JP2594475B2 (en) * | 1990-04-16 | 1997-03-26 | 電気化学工業株式会社 | Ceramic circuit board |
| JPH09181423A (en) * | 1990-04-16 | 1997-07-11 | Denki Kagaku Kogyo Kk | Ceramic circuit board |
-
1984
- 1984-03-16 JP JP5064384A patent/JPS60195068A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991016805A1 (en) * | 1990-04-16 | 1991-10-31 | Denki Kagaku Kogyo Kabushiki Kaisha | Ceramic circuit board |
| US5354415A (en) * | 1990-04-16 | 1994-10-11 | Denki Kagaku Kogyo Kabushiki Kaisha | Method for forming a ceramic circuit board |
| JP2594475B2 (en) * | 1990-04-16 | 1997-03-26 | 電気化学工業株式会社 | Ceramic circuit board |
| JPH09181423A (en) * | 1990-04-16 | 1997-07-11 | Denki Kagaku Kogyo Kk | Ceramic circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH049752B2 (en) | 1992-02-21 |
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