JPS60194074A - Apparatus for forming thin film - Google Patents
Apparatus for forming thin filmInfo
- Publication number
- JPS60194074A JPS60194074A JP5049884A JP5049884A JPS60194074A JP S60194074 A JPS60194074 A JP S60194074A JP 5049884 A JP5049884 A JP 5049884A JP 5049884 A JP5049884 A JP 5049884A JP S60194074 A JPS60194074 A JP S60194074A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film
- sample
- conditions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は連続型の金属薄膜形成装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a continuous metal thin film forming apparatus.
この種の装置は、基板を連続的に自動で薄膜形成室に送
り込み。This type of equipment continuously and automatically feeds the substrate into the thin film forming chamber.
薄膜形成後も自動で試料を薄膜形成室から回収する。Even after thin film formation, the sample is automatically collected from the thin film formation chamber.
従来、この種の連続装置では基板表面に薄膜を形成した
後５作業者が装置から試料を取り出し２作成された薄膜
の特性を測定し条件通りの薄膜が形成されているか否か
の判定をしていた。この従来の方法では、薄膜形成時の
条件に異常があり、最初に設定した条件と異なった薄膜
が形成されてしまった場合でも、試料を装置から取り出
して測定するまでは、その事実を判定することがで、ξ
ない。この為もし多葉の試料を連続的に処理していく場
合には多量の不良品を作ってしまう危険性がある。Conventionally, in this type of continuous equipment, after forming a thin film on the surface of a substrate, 5 workers take out a sample from the equipment and 2 measure the characteristics of the created thin film to determine whether or not the thin film has been formed according to the conditions. was. In this conventional method, even if there is an abnormality in the conditions during thin film formation and a thin film is formed that differs from the conditions originally set, this fact cannot be determined until the sample is removed from the device and measured. That is, ξ
do not have. For this reason, if multiple samples are processed continuously, there is a risk of producing a large number of defective products.
薄膜の諸元のうち、膜厚に対してこの危険を防ぐ目的で
改善がなされたものに特開昭５８−１４１３８１の発明
がある。Among the specifications of the thin film, an invention disclosed in Japanese Patent Application Laid-open No. 141381/1983 is an example of an invention in which improvements have been made to the film thickness for the purpose of preventing this danger.
その発明の方法は、薄膜形成部の下流にシート抵抗を測
定する測定部を設け、形成された薄膜の膜厚全自動で測
定し、そのデーターを薄膜形成部にフィードバックして
膜厚のコントロールを行うものである。この方法を使え
ば先に述べたような多量の不良品を作ってしまう危険は
防止できる。The method of the invention is to provide a measuring section for measuring sheet resistance downstream of the thin film forming section, fully automatically measure the thickness of the formed thin film, and feed back the data to the thin film forming section to control the film thickness. It is something to do. By using this method, the risk of producing a large number of defective products as mentioned earlier can be avoided.
しかし、最近の基板の表面が平坦でなく、極めて多くの
段差を持ったものが極〈普通に用いられている。このよ
うな段差をもった基板に対しては形成される薄膜の膜厚
が基板表面の平坦部で所定値であるだけでは不充分であ
り段差に対する被膜も所定値、所定形状でなければなら
ない。段差に対する被膜は膜厚が一定であっても成膜条
件によってかなり変化するので２段差に対する被膜度、
被膜形状を所定のものに保つ為には成膜条件を常に所定
の状態に保つ必要がある。However, recently, substrates whose surfaces are not flat and have extremely many steps are very commonly used. For a substrate with such a step difference, it is not enough that the thickness of the thin film formed on the flat portion of the substrate surface is a predetermined value, and the coating on the step portion must also have a predetermined value and a predetermined shape. Even if the film thickness is constant, the coating on the step varies considerably depending on the film formation conditions, so the degree of coating on the two-step difference,
In order to maintain a predetermined film shape, it is necessary to always maintain the film forming conditions in a predetermined state.
本発明は試料表面の段差に対する被膜を常に所定のもの
に保つ為に、薄膜形成室から送り出された試料の段差の
被膜状況を自動で測定し、そのデータを薄膜形成条件に
フィードバックして常に同−の所定の段差被膜を得るこ
とを特徴とし、その目的は、薄膜形成条件の変動を押え
多量の不良品が発生するのを防止することにある。In order to always keep the coating on the step on the sample surface to a predetermined level, the present invention automatically measures the coating condition on the step on the sample sent out from the thin film forming chamber, and feeds the data back to the thin film forming conditions to always maintain the same level. The method is characterized by obtaining a predetermined level difference coating of -, and its purpose is to suppress fluctuations in thin film forming conditions and prevent a large number of defective products from being produced.
薄膜形成装置には種々あるが、以下ではスパッタリング
装置を例にとって本発明の説明を行う。Although there are various thin film forming apparatuses, the present invention will be explained below using a sputtering apparatus as an example.
第１図は従来のスパッタリング装置の例である。試料５
がロード室１にストックされ、一枚づつ薄膜形成室２へ
矢印１６の向きに送らへ先ずランプ９によって加熱処理
されたのちカソード４から飛来したスパッタ原子によっ
て被膜されう被膜路Ｔ後矢印１７の方向にアンロード室
３へ送り込まれこ＼にストックされる。FIG. 1 is an example of a conventional sputtering apparatus. Sample 5
are stocked in the loading chamber 1 and sent one by one to the thin film forming chamber 2 in the direction of the arrow 16. After being heated by the lamp 9, the film is coated by sputtered atoms flying from the cathode 4 through the coating path T shown by the arrow 17. It is sent to the unloading chamber 3 in this direction and stocked here.
アンロード室３にストックされた試料８は、所定の量が
た首った後取り出されて次工程へ進む。After the sample 8 stocked in the unloading chamber 3 has sagged by a predetermined amount, it is taken out and proceeds to the next step.
このような従来の装置では、薄膜形成条件に異常があり
、試料表面の段差被膜に変化が生じても、アンロード室
３にストックされた試料８を取り出して測定して見るま
では、その異常が判らない。In such a conventional device, even if there is an abnormality in the thin film forming conditions and a change occurs in the step coating on the sample surface, the abnormality cannot be detected until the sample 8 stocked in the unloading chamber 3 is taken out and measured. I don't understand.
第２図は試料表面の段差への正常な被膜状態を示したも
のである。試料２１の表面の左側には極めて多数の段差
２２があり、形成される薄膜２３はこの第２図のように
なめらかに段差を被うものでなければならない。FIG. 2 shows a normal coating state on a step on the sample surface. There are an extremely large number of steps 22 on the left side of the surface of the sample 21, and the thin film 23 to be formed must cover the steps smoothly as shown in FIG.
第３図は段差への被膜状態の異常な例を示したものであ
る。第２図と比べて薄膜２４の段差への被膜形状が異常
であり、この様な薄膜は、出来上る製品の性能を低下さ
せる。段差被膜形状がこのように異常になる原因にはい
くつか考えらね、スパッタリングにより薄膜形成を行う
場合では薄膜形成条件のうち段差被膜形状に影響する要
因には基板温度、スパッタリングガス圧力、スパッタリ
ング電力（成膜速度）等があるがこの中でも基板温度の
影響が最も大きい。FIG. 3 shows an example of an abnormal coating state on a step. Compared to FIG. 2, the shape of the thin film 24 covering the step is abnormal, and such a thin film deteriorates the performance of the finished product. There are several reasons why the shape of the step film becomes abnormal like this. When forming a thin film by sputtering, the factors that affect the shape of the step film among the thin film forming conditions include substrate temperature, sputtering gas pressure, and sputtering power. Among them, the substrate temperature has the greatest influence.
但しそれら条件の組合せには薄膜の組成、膜厚によって
決る一定の拘束があり、それぞれの最適条件は他の条件
によって微妙に変化する。However, the combination of these conditions is subject to certain constraints determined by the composition and thickness of the thin film, and each optimum condition slightly changes depending on other conditions.
第４図は本発明の実施例であり、薄膜形成室２にて薄膜
形成後。FIG. 4 shows an example of the present invention, after forming a thin film in the thin film forming chamber 2.
矢印１７の方向に送り出された試料１０は非接触型の面
積抵抗測定器１１（例えば渦電流型の測定器があるンで
、形成された金属薄膜の面積抵抗が測定さね、その後ア
ンロード室３にストックされる。The sample 10 sent out in the direction of the arrow 17 is measured with a non-contact type sheet resistance measuring device 11 (for example, an eddy current type measuring device), and then transferred to an unloading chamber. Stocked in 3.
第５図は形成された金属薄膜の膜厚（横軸）Ｘと９面積
抵抗測定器１１で測定された測定値を膜厚に換算した値
（縦軸）ｙの関係の一例を示すものである。図中ａの曲
線は全面が平坦な基板。FIG. 5 shows an example of the relationship between the thickness of the formed metal thin film (horizontal axis) be. The curve a in the figure represents a substrate whose entire surface is flat.
即ち図の２５の上に金属薄膜を形成した場合のものであ
る。図中す及びＣの曲線は表面に数多くの段差を持つ基
板の上に金属薄膜を形成した場合のものであり、このう
ち曲線すは段差への被膜が良好な場合、すなわち第２図
の２３の状態のものに相当し２曲線Ｃは段差への被膜が
不良である場合、すなわち第３図の２４の状態のものに
相当する。一定の条件下では第５図の横軸は時間軸と考
えても支障はなＡ。That is, this is the case where a metal thin film is formed on 25 in the figure. Curves C and C in the figure are for the case where a thin metal film is formed on a substrate with many steps on the surface. 2 curve C corresponds to the case where the coating on the step is defective, that is, the state 24 in FIG. 3. Under certain conditions, it is safe to think of the horizontal axis in Figure 5 as the time axis.A.
さてこの第５図の曲ｇｂをたどるように、即ち第２図に
示される良好な被膜を形成するように諸条件を設定して
スパッタリングを行っても、工程中に次第に金属薄膜の
形成条件が変化し、第３図のような不良の膜を生ずるよ
うになった場合には非接触型の面積抵抗測定器１１で継
続的に第４図の測定を行うことにより図５の曲線がｂか
らＣへと移り薄膜形成直後に検知されるためその異常を
いち早く検知することができる。もちろん、この時には
形成された薄膜の膜厚が基板表面で一様であること及び
工程中金属薄膜の固有抵抗に変化を生じないことが前提
条件であるがこれは多くの場合容易に満足される。Now, even if sputtering is carried out by setting various conditions to follow curve gb in Fig. 5, that is, to form a good film as shown in Fig. 2, the conditions for forming the metal thin film gradually change during the process. If the change occurs and a defective film as shown in FIG. 3 is produced, the curve in FIG. Since the process moves to step C and is detected immediately after the thin film is formed, the abnormality can be detected quickly. Of course, at this time, the prerequisites are that the thickness of the thin film formed be uniform on the substrate surface and that the specific resistance of the metal thin film does not change during the process, but this is easily satisfied in many cases. .
このように本発明を用いれば金属薄膜形成直後にその段
差被膜形状を測定し、もし異常があれば９例えば図４の
中に示されているフィードバック回路１２を通して試料
の加熱条件を制御するとか、あるいは装置を止めて原因
を調査する等の制御を行うことができる。この結果、不
良な段差被膜形状の膜を多量に生産してしまうことを防
ぐことができる。In this way, if the present invention is used, the shape of the stepped film can be measured immediately after the metal thin film is formed, and if there is an abnormality, the heating conditions of the sample can be controlled through the feedback circuit 12 shown in FIG. 4, for example. Alternatively, control such as stopping the device and investigating the cause can be performed. As a result, it is possible to prevent a large amount of films having a defective step film shape from being produced.
以上はスパッタリング装置を例にとって１本発明の効果
を述べたものであるが他の薄膜形成装置でも本発明が有
効であることは明らかであり、工業上有益な発明という
ことができる。Although the effects of the present invention have been described above using a sputtering apparatus as an example, it is clear that the present invention is effective in other thin film forming apparatuses, and can be said to be an industrially useful invention.
第２図は従来のスパッタリング装置を示す図。第２図は
段差を持った試料表面に被膜された金属薄膜の正常な被
膜状態を示し。
第３図はその異常な例を示す。第４図は本発明の実施例
のスパッタリング装置を示す図である。
１・・・試料のロード室 ２・・・薄膜形成室 ３・・
・アンロード室４・・・スパッタリングカソード ５．
７、８．１０・・・試料１１・・・非接触型の表面抵抗
測定器
特許出願人 日電アネルバ株式会社
手 続 補 正 書 （方式、ｆλ二
昭和５９年７月２０日
特許庁長官 殿
昭和５９年 特許軸 第５（１４９Ｂ号 りめ１、事件
の表示
２、発明の名称
ハクマＭセイソウチ
薄膜基或装置
３、補正を必要とする者
事件との関係 特許出願人
〕１１ウシ ョツヤ
住所 東京都府中市四谷５−８−１
ニチデン
名称 日電アネルバ株式会社
オ タ ゼノン ロウく８迂咥駆９
代表者 織 １）善次部
４、補正命令の日付
昭和５９年 ６月 ６日
５、補正により増加する発明の数 ０
６、補正の対象
明細書の発明の詳細な説明の欄及び図
面の簡単な説明の欄。
制０
７、補正の内容
別紙のとおり
補正の内容
白
１、明細書箱ｉ１ｉ １行目の「（考案）」の字を削除
する。
シ
２、同第６璃第７行目の「第２図は従来の」を。
「第１図は従来の」と補正する。
３、同第６頁１０行目と１１行目の間に「第５図は形成
された金属薄膜の膜厚と１面積抵抗測定器で測定された
測定値を膜厚に換算した値の関係を示すグラフである。
」を挿入する。FIG. 2 is a diagram showing a conventional sputtering apparatus. Figure 2 shows the normal coating state of a metal thin film coated on a sample surface with steps. Figure 3 shows an unusual example. FIG. 4 is a diagram showing a sputtering apparatus according to an embodiment of the present invention. 1... Sample loading chamber 2... Thin film formation chamber 3...
・Unloading chamber 4...Sputtering cathode 5.
7, 8.10...Sample 11...Non-contact surface resistance measuring device Patent applicant Nichiden Anelva Co., Ltd. Procedures Amendment (Method, fλ2 July 20, 1980 Director General of the Patent Office Tono Showa 1959 Patent Axis No. 5 (No. 149B Rime 1, Indication of Case 2, Name of Invention Hakuma M Seisouchi Thin Film Base or Device 3, Relationship with Case Requiring Amendment Patent Applicant] 11 Ushio Address Tokyo 5-8-1 Yotsuya, Fuchu-shi Nichiden name Nichiden Anelva Co., Ltd. Ota Zenon Roku 8 Tomasaki 9 Representative Ori 1) Zentsugube 4, date of amendment order June 6, 1980 5, increased due to amendment Number of inventions to be amended 0 6, Column for detailed explanation of the invention and column for brief explanation of drawings in the specification subject to amendment. System 0 7. Contents of amendment as shown in the attached sheet White 1, Specification box i1i 1 Delete the character "(invention)" in the first line. 2, "Diagram 2 is the conventional" in the 7th line of the 6th letter of the same. Correct it to "Diagram 1 is the conventional." 3. Between the 10th and 11th lines of page 6, it says, ``Figure 5 shows the relationship between the thickness of the formed metal thin film and the value measured by the 1-area resistance measuring device converted into film thickness.'' ” is inserted.
Claims (1)
膜形成装置において、該金属薄膜を形成した後に該基板
上の段差への被膜度を測定する手段と２その測定結果に
基づいて該金属薄膜形成の成膜条件を制御する制御手段
とを備えたことを特徴とする薄膜形成装置。2. In a continuous film thin film forming apparatus for forming a metal thin film on the surface of a substrate having steps, after forming the metal thin film, measuring the degree of coverage of the steps on the substrate; and 2. 1. A thin film forming apparatus comprising: a control means for controlling film forming conditions for forming a thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5049884A JPS60194074A (en) | 1984-03-16 | 1984-03-16 | Apparatus for forming thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5049884A JPS60194074A (en) | 1984-03-16 | 1984-03-16 | Apparatus for forming thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60194074A true JPS60194074A (en) | 1985-10-02 |
| JPH0354190B2 JPH0354190B2 (en) | 1991-08-19 |
Family
ID=12860602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5049884A Granted JPS60194074A (en) | 1984-03-16 | 1984-03-16 | Apparatus for forming thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60194074A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8556118B2 (en) | 2009-04-01 | 2013-10-15 | Nifco Inc. | Moving mechanism of movable body |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4431220Y1 (en) * | 1966-06-08 | 1969-12-23 | ||
| JPS58141381A (en) * | 1982-02-15 | 1983-08-22 | Hitachi Ltd | Thin film forming device |
-
1984
- 1984-03-16 JP JP5049884A patent/JPS60194074A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4431220Y1 (en) * | 1966-06-08 | 1969-12-23 | ||
| JPS58141381A (en) * | 1982-02-15 | 1983-08-22 | Hitachi Ltd | Thin film forming device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8556118B2 (en) | 2009-04-01 | 2013-10-15 | Nifco Inc. | Moving mechanism of movable body |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354190B2 (en) | 1991-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |