JPS60194030A - Copper alloy for lead material for semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a lead material for a semiconductor device having superior strength, electric conductivity, heat resistance and elongation by reducing the Cr content of a Cu-Cr-Zr alloy as a high strength material having high electric conductivity and by adding a specified amount of Mg combined optionally with a specified amount of Si. CONSTITUTION:A Cu alloy contg. 0.05-0.40% Cr, 0.01-0.2% Zr and 0.001- 0.12% Mg or further contg. 0.001-0.1% Si is used as a lead material for a semiconductor device such as IC or LSI. The Cu alloy has 46-54kg/mm.<2> tensile strength, 85-94% IACS electric conductivity, 450-500 deg.C semisoftening temp., 8.0-11.2% elongation and superior suitability to plating.

Description

【発明の詳細な説明】 本発Ｆ！Ａは、ＩＣ，ＬＳＩなどの半導体機器における
リード材用の銅合金で、詳しくは、高強１ｆ−高導電材
料であるＣｕ−Ｃｒ−Ｚｒ合金を半導体機器のリード材
として用いることができるように改良することに関する
ものである。[Detailed description of the invention] The original F! A is a copper alloy for lead material in semiconductor devices such as ICs and LSIs. Specifically, the Cu-Cr-Zr alloy, which is a high-strength 1F-high conductivity material, has been improved so that it can be used as a lead material in semiconductor devices. It's about doing.

半導体機器のリード材には、近年の半導体回路の高密度
化による消費電力の増大によって、高い放熱性（言いか
えると高い導電率ンがめられておシ、又、実装技術面か
らは高強度がめられている。さらに、仁れらに加え、リ
ード材に対する要求として、伸びが良く曲げ加工性が良
好なこと。Lead materials for semiconductor devices are required to have high heat dissipation properties (in other words, high conductivity) due to the increase in power consumption due to the high density of semiconductor circuits in recent years, and high strength is required from the viewpoint of mounting technology. In addition to the reeds, other requirements for lead materials include good elongation and good bending workability.

耐熱性に優れていること、メッキ性が良好なことなどが
挙けられる。Examples include excellent heat resistance and good plating properties.

従来使用されている代表的な半導体機器のリード材とし
てＣＤＡｌ９４合金（Ｃｕ−２，３％Ｆｅ　−０，１％
　Ｚｎ　＝０．０３％Ｐ；合金組成の俤は重量％であル
、以下、同じである。）があるが、前記合金は導電率が
十分とは言い難く、また耐熱性、伸びにおいても満足な
特性ではない。CDAl94 alloy (Cu-2,3% Fe-0,1%
Zn = 0.03%P; Alloy compositions are expressed in weight %, and the same applies hereinafter. ), but the electrical conductivity of these alloys is far from sufficient, and the properties of heat resistance and elongation are also unsatisfactory.

一方、Ｃｕ　−Ｃｒ−Ｚｒ合金（Ｃｒ　：　０．４〜１
．０％。On the other hand, Cu-Cr-Zr alloy (Cr: 0.4-1
．． 0%.

Ｚｒ　：　０．１〜０．５％、残ｐはＣｕ）が高強度・
高導電材料としてこの出願前に公知であり、前記の三元
合金は、強度と導電率の点では実用されているリード材
よルも優れた特性を有しているが、半導体機器の層迄に
おいて必須の工程であるダイボンディング等のはんだ付
は工程で熱形ｅを受けるとメッキ部にふくれを発生する
ことが原因で、半導体機器のリード材として実用化され
ていなかった。Zr: 0.1-0.5%, remaining p is Cu) has high strength.
The above-mentioned ternary alloy, which was known before this application as a highly conductive material, has excellent properties in terms of strength and conductivity even as a lead material used in practical use. Soldering such as die bonding, which is an essential process in the process, has not been put into practical use as a lead material for semiconductor devices because the plated parts blister when exposed to heat during the process.

したがって、この出願の発明の目的は、ＣＤＡｌ９４合
金と同等以上の強度を有し、かつこれよシ優れた電導性
、耐熱性、伸びを有する半導体機器のＩＪ−ド材用の合
金を得ることである。Therefore, the purpose of the invention of this application is to obtain an alloy for IJ-doping material of semiconductor devices, which has strength equal to or higher than that of CDAl94 alloy, and also has superior conductivity, heat resistance, and elongation. be.

本発明者らは、高強度・高導電材料であるＣｕ　−Ｃｒ
　−Ｚｒ合金に着目し、これを基本に種々の研究を行な
った結果、 ■Ｃｒ含有量を０．４％未満とし、珈を特定量添加する
ことにより、Ｃｕ　−Ｃｒ−Ｚｒ合金の問題点である加
熱によるメッキ部のふくれをなくすことができ、しかも
、半導体機器のリード材として必要な導電率、伸び等の
上記特性を満足することができる、及び ■前記の■の合金に更にＳｔを添加すると、強度と耐熱
性を一層向上させることができる、という知見を得るに
至った。The present inventors have discovered that Cu-Cr is a high-strength and highly conductive material.
- Focusing on the Zr alloy, we conducted various studies based on this, and found that: ■ By reducing the Cr content to less than 0.4% and adding a specific amount of copper, the problems of the Cu -Cr-Zr alloy could be solved. It is possible to eliminate the blistering of the plated part due to certain heating, and it can also satisfy the above characteristics such as conductivity and elongation required for lead materials for semiconductor devices, and ①Addition of St to the alloy of ③ above. This led to the discovery that strength and heat resistance could be further improved.

この出願の発明は、上記知見に基いて発明されたもので
あり、 その第一は、 Ｃｒ　：　０．０５〜０．４％未満。The invention of this application was invented based on the above findings, and the first one is: Cr: 0.05 to less than 0.4%.

Ｚｒ：０．０１〜０．２％。Zr: 0.01-0.2%.

Ｍｇ：０．００１〜０．１２％ を含有し、残シがＣｕおよび不可避不純物からなる組成
（以上、重量％）’ｔ−有する半導体機器のＩ７−ド材
用銅合金であり、 その第二は、 Ｃｒ　：　０．０５〜０．４％未満。It is a copper alloy for I7-board material of semiconductor equipment, which contains Mg: 0.001 to 0.12%, and has a composition (hereinafter, weight %) of Cu and unavoidable impurities, and the second Cr: 0.05 to less than 0.4%.

Ｚｒ：０．０１〜０．２％。Zr: 0.01-0.2%.

Ｍｇ：０．００１〜０．１２％ を含有し、さらに Ｓｉ　：０．００１〜０．１％ を含有し、残りがＣｕおよび不可避不純物からなる組成
（以上、重ｆｉ％）を有する半導体機器の１７一ド材用
銅合金である。A semiconductor device having a composition containing Mg: 0.001 to 0.12%, Si: 0.001 to 0.1%, and the remainder consisting of Cu and unavoidable impurities (hereinafter, heavy fi%). This is a copper alloy for 17-metal steel material.

次に、この出願の発明の合金における成分添加理由及び
組成範囲を上記のように限定した理由について述べる。Next, the reason for adding components to the alloy of the invention of this application and the reason for limiting the composition range as described above will be described.

（ａ）　Ｃｒ Ｃｒ含有量が０．０５％未満では、所望の強度と耐熱性
が得られず、０．４％以上では、メッキ性を阻害（加熱
によシメッキ部にふくれが発生うし、又、導電率も若干
低下するため、Ｃｒ含有量を０．０５〜０．４％未満と
した。(a) Cr If the Cr content is less than 0.05%, the desired strength and heat resistance cannot be obtained, and if it is more than 0.4%, the plating properties are inhibited (the plated part may blister due to heating, or Since the electrical conductivity also decreases slightly, the Cr content was set to less than 0.05 to 0.4%.

（ｂＪ　Ｚｒ 同様に、Ｚｒ含有量が０．０１％未満では、所望の強度
と耐熱性が得られず、０．２％よ〕多いと、メッキ性を
阻害（加熱にょシメッキ部にふくれが発生）し、導電率
も若干低下するため、Ｚｒ含有量を０．０１〜０．２％
とした。(Similarly to Zr, if the Zr content is less than 0.01%, the desired strength and heat resistance cannot be obtained, and if it is more than 0.2%, the plating performance is inhibited (blistering occurs in the heated plated part). ), and the conductivity also decreases slightly, so the Zr content is reduced to 0.01 to 0.2%.
And so.

（ｃ）　Ｍｇ Ｍｇは、溶湯を清浄化し、伸びを大きくし、しかも、メ
ッキ性を改善するために添加されるが、その含有量が帆
００１％未満では、前記の効果を生じさせることができ
ないし、逆に０．１２％を越えると、熱間加工性を低下
させ、熱間加工時に微細クラックが発生するので、強度
、伸び、導電率が低下し、メッキ性も阻害されるため、
含有量をｏ、ｏ　ｏ　ｉ〜０．１２チとした。(c) Mg Mg is added to clean the molten metal, increase elongation, and improve plating properties, but if its content is less than 0.01%, the above effects cannot be produced. On the other hand, if it exceeds 0.12%, hot workability will be reduced and fine cracks will occur during hot working, which will reduce strength, elongation, and electrical conductivity, and will also inhibit plating properties.
The content was set to o, o o i to 0.12 h.

以下に、この出願の第二発明の添加成分であるＳｔにつ
いて、その添加理由と組成範囲限定理由を述べる。Regarding St, which is the additive component of the second invention of this application, the reason for its addition and the reason for limiting the composition range will be described below.

（ｄ）　５ｔ Ｓｔは、合金中の結晶粒の粗大化を防ぎ、強度および耐
熱性を向上させるために添加されるが、その含有量が帆
００１％未満では、ＭＪ記効果を奏することができない
し、逆に％０．１％を越えると、メッキ性ｔ−阻害する
ため、含有量を０．００１〜０．１％とした。(d) 5t St is added to prevent coarsening of crystal grains in the alloy and improve strength and heat resistance, but if the content is less than 0.01%, the MJ effect cannot be achieved. On the other hand, if it exceeds 0.1%, the plating properties will be inhibited, so the content was set to 0.001 to 0.1%.

次に、本発明合金の構成及び効果を実施例にょシ比較例
とともに説明する。Next, the structure and effects of the alloy of the present invention will be explained together with examples and comparative examples.

実施例及び比較例 真空溶融炉にて、第１表に示す組成の銅合金を溶融・鋳
造し、直径６０■、高さ１８０馴の円柱　。Examples and Comparative Examples A copper alloy having the composition shown in Table 1 was melted and cast in a vacuum melting furnace to form a cylinder with a diameter of 60mm and a height of 180mm.

状鋳塊を得た。次に、これを面側した後、９００℃にて
熱間鍛造を行ない、ただちに水中急冷を行ない、２０馴
Ｘ１００ｗ＋Ｘ２００鱈の板材を得た。A shaped ingot was obtained. Next, after flattening this, it was hot forged at 900°C and immediately quenched in water to obtain a 20mm x 100w+ x 200 cod plate.

次いで、冷間圧延と焼鈍（６００℃）をくり返し行ない
、最終加工率５０％、最終板厚０．３順にした後、４５
０℃にて１００分間の焼鈍を施した。Next, cold rolling and annealing (600°C) were repeated to achieve a final processing rate of 50% and a final plate thickness of 0.3.
Annealing was performed at 0°C for 100 minutes.

これらの薄板について、引張強さ、伸び、導電率、耐熱
性、メッキ性の測定及び評価を行なった。The tensile strength, elongation, electrical conductivity, heat resistance, and plating properties of these thin plates were measured and evaluated.

引張強さ、伸ヒノ測定ＵＪＩＳ−Ｚ２２４１に基いて行
なった。Tensile strength and elongation measurements were conducted based on UJIS-Z2241.

耐熱性は、上記薄、板よりＪＩＳ−２２２０１に基いて
試験片を採取し、秒々の温度にて、アルゴンガス雰囲気
中で１時間加熱した後、引張試験を行ない、その強度が
加熱処理を行なっていない材料の強度と完全に焼鈍軟化
した拐料の強度との和の職を示す加熱温度（半軟化温度
）としてめた。Heat resistance was determined by taking a test piece from the above-mentioned thin plate according to JIS-22201, heating it for 1 hour in an argon gas atmosphere at a temperature of seconds, and then performing a tensile test. The heating temperature (semi-softening temperature) is determined as the sum of the strength of the material that has not been annealed and the strength of the material that has been completely softened by annealing.

メッキ性は、試料表面に厚さ５μｍ程度の電気鉄メッキ
を施し、アルゴンガス雰囲気中で４３０℃に５分間加熱
し、放冷後、目視にてふくれの有無で評価した。The plating property was evaluated by applying electric iron plating to a thickness of about 5 μm on the surface of the sample, heating it to 430° C. for 5 minutes in an argon gas atmosphere, and then visually observing the presence or absence of blisters after cooling.

上記結果を第１表に示す。The above results are shown in Table 1.

第１表より明らかなように、本発明合金は、引張強さ４
６〜５４梅／■２．導電率８５〜９４％工ＡＣ８，半軟
化温度４５０〜５００℃、伸び８．０〜１１．２％の特
性を示し、しかも、メッキ性は半導体機器のリード材と
して用いることができる程、良好である。即ち、従来合
金のＣＤＡｌ９４合金（従来合金Ｎａｌ参照）と同等以
上の強度を維持し、かつはるかに優れた導電率および伸
びを有するとともに耐熱性をも改善していることが判る
し、又、高強度・高導電材料として公知のＣｕ　−Ｃｒ
−Ｚｒ合金（従来合金Ｎ１２参照）と比較すると、強度
はやや低いが、伸び、導電率は高く、しかも、メッキ性
が半導体機器のリード材として用いることができるよう
に改善されていることが判る。As is clear from Table 1, the alloy of the present invention has a tensile strength of 4
6-54 plum/■2. It exhibits electrical conductivity of 85-94% AC8, semi-softening temperature of 450-500°C, and elongation of 8.0-11.2%.Moreover, its plating properties are so good that it can be used as lead material for semiconductor devices. be. In other words, it can be seen that it maintains strength equal to or higher than the conventional alloy CDAl94 alloy (see conventional alloy Nal), has far superior conductivity and elongation, and has improved heat resistance. Cu-Cr is known as a strong and highly conductive material.
-Compared with the Zr alloy (see conventional alloy N12), the strength is slightly lower, but the elongation and conductivity are higher, and the plating properties have been improved so that it can be used as a lead material for semiconductor devices. .

これに対し、Ｃｒ量がこの発明の合金の組成範囲よシ少
ない比較合金Ｎｌｌでは、強度・耐熱性が得られず、逆
に多い比較合金階２では、メッキ性が阻害され、導電率
が若干低下している。また、Ｚｒ量が本発明合金の組成
範囲よりも少ない比較合金Ｎ１３では、強度、耐熱性が
得られず、逆に多い比較合金瀧４ではメッキ性が阻害さ
れ、導電率が若干低下している。また、Ｍｇ含有斂が本
発明合金の組成範囲よ多少ない比較合金蝿５では伸びが
低く、伸びおよび導電率が低下し、メッキ性も阻害され
ていることがわかるが、これは、熱間加工時に微細クラ
ックが発生するからである。On the other hand, the comparative alloy Nll, which has a lower Cr content than the composition range of the alloy of the present invention, does not have sufficient strength and heat resistance, while the comparative alloy Grade 2, which has a higher Cr content, inhibits plating properties and slightly lowers the electrical conductivity. It is declining. In addition, comparative alloy N13, which has a smaller amount of Zr than the composition range of the present alloy, does not have sufficient strength and heat resistance, and conversely, comparative alloy Taki 4, which has a larger amount of Zr, inhibits plating properties and slightly decreases electrical conductivity. . In addition, it can be seen that the comparative alloy FLY 5, which has a Mg-containing radius slightly lower than the composition range of the present alloy, has low elongation, decreases elongation and conductivity, and inhibits plating properties. This is because fine cracks sometimes occur.

このように、本発明合金はＣＤＡｌ９４合金と同等以上
の強度を持ち、かつはるかに優れた導電率および伸びｆ
ｔ有し、さらに耐熱性が良好であ仄又、高強度・高導電
材料として公知のＣｕ　−Ｃｒ　−Ｚｒ合金の、加熱に
よるメッキ部のふくれという、半導体機器のリード材と
しては致命的な欠点等を改良したものであり、半導体機
器のＩ＋−ド材用合金として適した特性をもつものであ
る。Thus, the alloy of the present invention has strength equal to or higher than that of the CDAl94 alloy, and has far superior conductivity and elongation f.
Cu-Cr-Zr alloy, which is known as a high-strength, high-conductivity material, has good heat resistance and swells when heated, which is a fatal drawback when used as a lead material for semiconductor devices. It is an improved version of the above, and has characteristics suitable as an alloy for I+- gate materials of semiconductor devices.

出願人　三菱金属株式会社 代理人　富　１）和　夫　外１名Applicant: Mitsubishi Metals Corporation Agent Tomi 1) Kazuo and 1 other person

Claims (1)

【特許請求の範囲】 （ＩＩ　Ｃｒ　：　０．０５〜０．４１未満。 Ｚｒ　：　０．０１〜０６２％。 Ｍｇ：　０．００１〜０．１２％ を含有し、残シがＣｕおよび不可避不純物からなる組成
（以上、重量％）を有する半導体機器のリード材用鋼合
金。 （２）Ｃｒ　：　０．０５〜０．４１未満。 Ｚｒ　：　０．０１〜０．２％。 １１４ｇ　：　０．００１〜０．１２ｑｂを含有し、さ
らに Ｓｉ　：　０．００１〜０．１％ を含有し、残シがＣｕおよび不可避不純物からなる組成
（以上、重ｊＪｋ％）を有する半導体機器のり一ド材用
銅合金。[Claims] (II Contains Cr: 0.05 to less than 0.41, Zr: 0.01 to 062%, Mg: 0.001 to 0.12%, and the remainder is free from Cu and inevitable impurities. A steel alloy for lead material of semiconductor devices having a composition (the above, weight %): (2) Cr: 0.05 to less than 0.41. Zr: 0.01 to 0.2%. 114g: 0.001 to 0.12qb, further contains Si: 0.001 to 0.1%, and has a composition with the balance consisting of Cu and unavoidable impurities (hereinafter, weight jJk%). .