JPS60189124U - Bias circuit for static induction field effect transistor - Google Patents

Bias circuit for static induction field effect transistor

Info

Publication number
JPS60189124U
JPS60189124U JP7701784U JP7701784U JPS60189124U JP S60189124 U JPS60189124 U JP S60189124U JP 7701784 U JP7701784 U JP 7701784U JP 7701784 U JP7701784 U JP 7701784U JP S60189124 U JPS60189124 U JP S60189124U
Authority
JP
Japan
Prior art keywords
pair
field effect
effect transistor
circuit
input terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7701784U
Other languages
Japanese (ja)
Other versions
JPH0246090Y2 (en
Inventor
佐野 和見
Original Assignee
東北金属工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東北金属工業株式会社 filed Critical 東北金属工業株式会社
Priority to JP7701784U priority Critical patent/JPS60189124U/en
Publication of JPS60189124U publication Critical patent/JPS60189124U/en
Application granted granted Critical
Publication of JPH0246090Y2 publication Critical patent/JPH0246090Y2/ja
Granted legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例によるゲートバイアス回路を
示す回路図、第2図は第1図の回路の動作を説明するた
めの図、第3図はSITのV−1特性を示す図、第4図
は従来のゲートバイアス回路を有するB級増幅回路を示
す回路図、第5図は第4図の回路の動作を説明するため
の図、第6図は第4図の5ITIQ□及び10□の動作
ラインとアイドリング電流11を示す図である。 101及び102・・−3IT、 20. 20を及び
20゜・・・ゲートバイアス回路、INl及びIN2・
・・一対の入力端子、0UT1及び0UT2・・・一対
の出力端子、−Q□・・・トランジスタ、R1・・・放
電用抵抗1、C1及びC2・・・コンデンサ。 ゛−一一令時間
FIG. 1 is a circuit diagram showing a gate bias circuit according to an embodiment of the present invention, FIG. 2 is a diagram for explaining the operation of the circuit in FIG. 1, and FIG. 3 is a diagram showing the V-1 characteristic of SIT. , FIG. 4 is a circuit diagram showing a class B amplifier circuit having a conventional gate bias circuit, FIG. 5 is a diagram for explaining the operation of the circuit in FIG. 4, and FIG. 10 is a diagram showing an operating line of 10□ and an idling current 11. FIG. 101 and 102...-3IT, 20. 20 and 20°...gate bias circuit, INl and IN2.
... A pair of input terminals, 0UT1 and 0UT2 ... A pair of output terminals, -Q□ ... Transistor, R1 ... Discharge resistor 1, C1 and C2 ... Capacitor.゛-11th age

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 静電誘導型電界効果トランジスタのゲート端子及び別の
端子に接続される一対の出力端子と、電′   源電圧
が入力される一対の入力端子と、該一対の入力端子及び
前記一対の出力端子間に接続されたシリーズ・レギュレ
ータ型定電圧回路を有し、該定電圧回路は、前記一対の
入力端子の一方及び前記一対の出力端子の一方間にコレ
クタ及びエミッタを接続されたトランジスタを有すると
共に、前記一対の入力端子の一方と、前記一対の入力端
子の他方及び−前記一対の出力端子の他方間を接続する
接続線と、前記トランジスタのベースとの間に、接続さ
れた規定バイアス電圧を設定するための規定バイア゛ス
設定回路を有している前記静電誘導型電界効果トランジ
スタのゲートバイアス回路において、前記一対の入力端
子の一方と前記トランジスタのベースとの間にコンデン
サを接続したことを特徴とする静電誘導型電界効果l・
ランジスタのバイアス回路。
A pair of output terminals connected to the gate terminal and another terminal of the electrostatic induction field effect transistor, a pair of input terminals to which a power supply voltage is input, and a terminal between the pair of input terminals and the pair of output terminals. a series regulator type constant voltage circuit connected to the constant voltage circuit, the constant voltage circuit having a transistor having a collector and an emitter connected between one of the pair of input terminals and one of the pair of output terminals; Setting a specified bias voltage connected between one of the pair of input terminals, the other of the pair of input terminals, and the other of the pair of output terminals, and the base of the transistor. In the gate bias circuit of the electrostatic induction field effect transistor, which has a prescribed bias setting circuit for Characteristic electrostatic induction type electric field effect
transistor bias circuit.
JP7701784U 1984-05-28 1984-05-28 Bias circuit for static induction field effect transistor Granted JPS60189124U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7701784U JPS60189124U (en) 1984-05-28 1984-05-28 Bias circuit for static induction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7701784U JPS60189124U (en) 1984-05-28 1984-05-28 Bias circuit for static induction field effect transistor

Publications (2)

Publication Number Publication Date
JPS60189124U true JPS60189124U (en) 1985-12-14
JPH0246090Y2 JPH0246090Y2 (en) 1990-12-05

Family

ID=30619693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7701784U Granted JPS60189124U (en) 1984-05-28 1984-05-28 Bias circuit for static induction field effect transistor

Country Status (1)

Country Link
JP (1) JPS60189124U (en)

Also Published As

Publication number Publication date
JPH0246090Y2 (en) 1990-12-05

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