JPS60161616A - Infrared heating unit for semiconductor wafer - Google Patents
Infrared heating unit for semiconductor waferInfo
- Publication number
- JPS60161616A JPS60161616A JP1731784A JP1731784A JPS60161616A JP S60161616 A JPS60161616 A JP S60161616A JP 1731784 A JP1731784 A JP 1731784A JP 1731784 A JP1731784 A JP 1731784A JP S60161616 A JPS60161616 A JP S60161616A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- infrared ray
- susceptor
- light
- beams
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000010438 heat treatment Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 4
- 241000257465 Echinoidea Species 0.000 claims 1
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、赤外線加熱装置、特に半導体工業で利用され
るＳｉ （シリコン）ウエノ・等の赤外線加熱装置に関
するものである。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION The present invention relates to an infrared heating device, in particular to an infrared heating device for Si (silicon) etc. used in the semiconductor industry.
従来例の構成とその問題点
半導体工業におけるエピタキシャル装置においては、反
応ガス分子が半導体基板表面で熱によシ分解析出してエ
ピタキシャル層を形成するものであるが、こうして形成
される膜の厚さ、および比抵抗の均一性、スリップの有
無は、半導体基板の表面温度に大きく影響される。従っ
て、良質な気相成長膜を得るためには、半導体基板を全
面に渡って均一な温度分布に保持することが必要である
。Conventional structure and its problems In epitaxial equipment in the semiconductor industry, reactive gas molecules are separated and separated by heat on the surface of a semiconductor substrate to form an epitaxial layer, but the thickness of the film thus formed is , the uniformity of specific resistance, and the presence or absence of slip are greatly influenced by the surface temperature of the semiconductor substrate. Therefore, in order to obtain a high-quality vapor-phase grown film, it is necessary to maintain a uniform temperature distribution over the entire surface of the semiconductor substrate.
従来の赤外線加熱方式を使用したエピタキシャル装置は
、第１図にその具体構成を示すように、石英ベルジャ１
とベース板２によって、完全に外外と遮断することがで
きるようになっていて、べ 。The epitaxial device using the conventional infrared heating method is a quartz bell jar 1, as shown in Fig. 1.
With the base plate 2 and the base plate 2, it can be completely isolated from the outside.
−ス板２には反応ガスを供給するだめのガス供給口３と
、反応ガスを排出するだめのガス排出口４が取り付けら
れている。またベース板２上には、半導体基板６を載せ
る基台６（以下上ブタと呼ぶ）が設置されている。また
石英ベルジャ１の外側には、半導体基板５を加熱するだ
めの赤外線ランプ７と、赤外線ランプ７の反射光線が効
率よく垂直に半導体基板６に照射するように反射鏡８が
取り付けられている。しかしながら以上のように構成さ
れた従来のエピタキシャル装置では赤外線ランプ７によ
ってサセプタ６と半導体基板６とが１０００°Ｃ以上の
温度に加熱され、反応ガスがガス供給口３から排出口４
に向かって流れるので、このときの半導体基板６の温度
分布は赤外線ランプ７から供給される熱エネルギーと半
導体基板６及び半導体基板６が載置されているサセプタ
６の外周面からの伝熱、輻射、対流、熱伝達との平衡状
態によって決定され、サセプタ６の上面には赤外線ラン
プ７からの一定の輻射熱を受け、一方外周面については
遮熱されておらずその表面温度に対応した大量の熱が放
出される。従ってサセプタ６の表面、即ち半導体基板６
の温度分布は、中央部で温度が高く外周で低いという分
布となってしまう。また赤外線ランプ自体に関しても、
端に比べて中央の方がよりフィラーメント温度が高い傾
向がある。また、ガス供給口３から供給されたガスが、
半導体基板６に最初に当たった部分は温度が低くなる。A gas supply port 3 for supplying a reaction gas and a gas discharge port 4 for discharging the reaction gas are attached to the base plate 2. Further, on the base plate 2, a base 6 (hereinafter referred to as an upper cover) on which a semiconductor substrate 6 is placed is installed. Further, on the outside of the quartz bell jar 1, an infrared lamp 7 for heating the semiconductor substrate 5 and a reflecting mirror 8 are attached so that the reflected light of the infrared lamp 7 efficiently irradiates the semiconductor substrate 6 vertically. However, in the conventional epitaxial apparatus configured as described above, the susceptor 6 and the semiconductor substrate 6 are heated to a temperature of 1000°C or more by the infrared lamp 7, and the reaction gas is pumped from the gas supply port 3 to the discharge port 4.
Therefore, the temperature distribution of the semiconductor substrate 6 at this time is due to thermal energy supplied from the infrared lamp 7, heat transfer from the semiconductor substrate 6 and the outer peripheral surface of the susceptor 6 on which the semiconductor substrate 6 is placed, and radiation. The upper surface of the susceptor 6 receives a certain amount of radiant heat from the infrared lamp 7, while the outer peripheral surface is not shielded and receives a large amount of heat corresponding to its surface temperature. is released. Therefore, the surface of the susceptor 6, that is, the semiconductor substrate 6
The temperature distribution is such that the temperature is high at the center and low at the outer periphery. Regarding the infrared lamp itself,
The filament temperature tends to be higher in the center than at the edges. Moreover, the gas supplied from the gas supply port 3 is
The temperature of the portion that first hits the semiconductor substrate 6 becomes lower.
これらのため半導体基板６上にエピタキシャル成長させ
た膜厚は中央に比べて端の方が薄いという欠点を有し、
また温度差による結晶学的スリップなどの結晶欠陥を生
じやすいという欠点を有していた。For these reasons, the film epitaxially grown on the semiconductor substrate 6 has the disadvantage that it is thinner at the edges than at the center.
It also has the disadvantage of being susceptible to crystal defects such as crystallographic slip due to temperature differences.
発明の目的
本発明は、上記欠点に鑑み赤外線ランプを用いて、簡単
な構成で、半導体基板上の温度分布を均一にすることに
より、膜の厚さ、および比抵抗の均一性、スリップの減
少等、温度均一性に関する問題を解決するだめの赤外線
加熱装置を提供することにある。Purpose of the Invention In view of the above-mentioned drawbacks, the present invention uses an infrared lamp to uniformize the temperature distribution on a semiconductor substrate with a simple configuration, thereby improving the uniformity of film thickness and specific resistance, and reducing slippage. It is an object of the present invention to provide an infrared heating device that solves problems related to temperature uniformity.
発明の構成
本発明は半導体基板を配置させる支持具と、前記支持具
を加熱するだめの赤外線ランプと、前記支持具と前記赤
外線ランプの間に位置し、赤外光を透過することのでき
る材質よりなり、かつ入射した光を屈折させて光の入射
強度分布を補正する光学補正レンズとからなり、半導体
ウェハの外周部分が中心より多くの光量を受けることに
より、半導体基板上の温度分布を均一にし、均一な膜厚
を成長させるという特有の効果を有する。Structure of the Invention The present invention provides a support for arranging a semiconductor substrate, an infrared lamp for heating the support, and a material that is located between the support and the infrared lamp and is capable of transmitting infrared light. It consists of an optical correction lens that refracts the incident light and corrects the incident intensity distribution of the light.The outer periphery of the semiconductor wafer receives more light than the center, which makes the temperature distribution on the semiconductor substrate uniform. It has the unique effect of growing a uniform film thickness.
実施例の説明
以下に本発明の一実施例について図面を参照しながら説
明する。第２図は本発明の一実施例の反応室の断面図で
ある。反応室９は、内部に水冷溝１ｏが施されたステン
レスより成る壁面部材１１と上部開閉ブロック１２とか
ら構成されている。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 2 is a sectional view of a reaction chamber according to an embodiment of the present invention. The reaction chamber 9 is composed of a wall member 11 made of stainless steel and having a water cooling groove 1o therein, and an upper opening/closing block 12.
この上部開閉ブロック１２には、内部に赤外線ランプヒ
ーターユニット１３が設置されている。赤外線ランプヒ
ーターユニット１３は、赤外線ランプ１４と、赤外線ラ
ンプ１４０反射光を平行光線として反射させる反射鏡１
６とからなる。まだこの反応室９の一端にはガス供給装
置（図示せず）から伸びだガス供給管１６が結合され、
更に他端にはガス排気管１７が結合されている。反応室
９の内部には半導体基板１８ｆ：載置するためのサセプ
タ１９が設置されている。更に、赤外線ランプヒーター
ユニット１３とサセプタ１９の間に、透明石英ガラスか
らなる光学補正レンズ２０が固定具２１により固定され
ている。この光学補正レンズ２０の形状は、上面の中央
部分が凹面となり、ナの凹面部分の直径が半導体基板１
８の直径より小さく設計されている。An infrared lamp heater unit 13 is installed inside the upper opening/closing block 12. The infrared lamp heater unit 13 includes an infrared lamp 14 and a reflector 1 that reflects the reflected light from the infrared lamp 140 as parallel light.
It consists of 6. A gas supply pipe 16 extending from a gas supply device (not shown) is connected to one end of the reaction chamber 9.
Further, a gas exhaust pipe 17 is connected to the other end. Inside the reaction chamber 9, a susceptor 19 for placing a semiconductor substrate 18f is installed. Further, an optical correction lens 20 made of transparent quartz glass is fixed between the infrared lamp heater unit 13 and the susceptor 19 by a fixture 21. The shape of the optical correction lens 20 is such that the central part of the upper surface is concave, and the diameter of the concave part on the inside is the same as that of the semiconductor substrate.
It is designed to be smaller than the diameter of 8.
以上のように構成されたエピタキシャル装置について以
下その動作を説明すると、光学補正レンズ２ｏは第３図
に示すように、入射面の中央部が凹面となっていて光を
発散するような適当な曲率に設計されている。そのだめ
凹面部に垂直に入射した光は屈折し、サセプタ１９上の
半導体基板１８の全面に入射する。また半導体基板１８
の周囲では、凹面部以外を直進した光も受けることにな
り、その結果、半導体基板１８の周囲が中心に比べて、
より多くの光量を受ける。The operation of the epitaxial device constructed as described above will be explained below. As shown in FIG. It is designed to. Therefore, the light incident perpendicularly on the concave portion is refracted and incident on the entire surface of the semiconductor substrate 18 on the susceptor 19. Also, the semiconductor substrate 18
The area around the semiconductor substrate 18 receives light that has traveled straight through areas other than the concave surface, and as a result, the area around the semiconductor substrate 18 receives light that has passed straight through areas other than the concave surface.
Receives more light.
以上のように、光学補正レンズ２０を赤外線ランプヒー
ターユニット１３とサセプタ１９との間に配置すること
によって、半導体基板１８上の温度分布の均一性が向上
し、かつ均一なエピタキシャル成長膜を得ることができ
る。As described above, by arranging the optical correction lens 20 between the infrared lamp heater unit 13 and the susceptor 19, it is possible to improve the uniformity of the temperature distribution on the semiconductor substrate 18 and to obtain a uniform epitaxially grown film. can.
なお本実施例において、光学補正レンズは、部分的に凹
面を有するものとしたが、サセプタ上で希望の光強度分
布を得ることができるように非球面等様々の設計が可能
である。In this embodiment, the optical correction lens has a partially concave surface, but various designs such as an aspheric surface are possible so that a desired light intensity distribution can be obtained on the susceptor.
また本実施例では光学補正レンズの材質は透明石英ガラ
スとしたが、赤外光を透過し耐熱性があればどのような
材質のものでもよい。さらに本実施例では反応室窓部材
と光学補正レンズを一体に形成したが、別々に形成して
も良い。Further, in this embodiment, the material of the optical correction lens is transparent quartz glass, but any material may be used as long as it transmits infrared light and has heat resistance. Further, in this embodiment, the reaction chamber window member and the optical correction lens are formed integrally, but they may be formed separately.
また本実施例では、エピタキシャル成長に適用したもの
であるが、エピタキシャル成長に限らず、他の気相成長
にもまたアニール装置にも適用できることはいうまでも
ない。Further, in this embodiment, the present invention is applied to epitaxial growth, but it goes without saying that the present invention is applicable not only to epitaxial growth but also to other types of vapor phase growth and to annealing apparatuses.
発明の効果
以上のように本発明は、光学補正レンズを赤外線ランプ
とサセプタとの間に配置することによって、半導体基板
表面の均一な温度分布を得ることができ、その結果半導
体基板上に均一な膜を成長させたリアニールすることが
でき、結晶学的なスリップも低減しその実用的効果は大
なるものがある。Effects of the Invention As described above, the present invention can obtain a uniform temperature distribution on the surface of a semiconductor substrate by disposing an optical correction lens between an infrared lamp and a susceptor, and as a result, a uniform temperature distribution on the semiconductor substrate can be obtained. The film can be reannealed after it has been grown, and crystallographic slip can be reduced, which has great practical effects.
第１図は、従来の赤外線ランプを用いたエピタキシャル
成長装置の断面図、第２図は本発明の一実施例における
半導体ウェハの赤外線加熱装置の断面図、第３歯は、光
学補正レンズに光が垂直に入射した場合の光の経路を示
した説明図である。
９・・・・・・反応室、１３・・・・・赤外線ランプヒ
ーターユニット、１６・・・・・・ガス供給管、１７・
・・・・・ガス排気管、１８・・・・・・半導体基板、
１９・・・・サセプタ、２０・・・・・・光学補正レン
ズ。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
第３図Fig. 1 is a sectional view of an epitaxial growth apparatus using a conventional infrared lamp, and Fig. 2 is a sectional view of an infrared heating apparatus for semiconductor wafers according to an embodiment of the present invention. FIG. 2 is an explanatory diagram showing the path of light when the light is incident perpendicularly. 9... Reaction chamber, 13... Infrared lamp heater unit, 16... Gas supply pipe, 17...
...Gas exhaust pipe, 18...Semiconductor substrate,
19...Susceptor, 20...Optical correction lens. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3
Claims (1)
るだめの赤外線ランプと、前記支持具と前記赤外線ラン
プの間に位置し、赤外光を透過することのできる材質よ
りなり、かつ入射した光を屈折させて光の入射強度分布
を補正する光学補正レンズとからなる半導体ウニ／・の
赤外線加熱装置、a support for arranging a semiconductor substrate; an infrared lamp for heating the support; and a support that is located between the support and the infrared lamp and is made of a material that can transmit infrared light and that is An infrared heating device for semiconductor sea urchins, consisting of an optical correction lens that refracts light and corrects the incident intensity distribution of the light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1731784A JPS60161616A (en) | 1984-02-01 | 1984-02-01 | Infrared heating unit for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1731784A JPS60161616A (en) | 1984-02-01 | 1984-02-01 | Infrared heating unit for semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60161616A true JPS60161616A (en) | 1985-08-23 |
Family
ID=11940637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1731784A Pending JPS60161616A (en) | 1984-02-01 | 1984-02-01 | Infrared heating unit for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60161616A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0320971A2 (en) * | 1987-12-18 | 1989-06-21 | Kabushiki Kaisha Toshiba | Epitaxial growth apparatus |
| US5452396A (en) * | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
| US5504831A (en) * | 1993-11-10 | 1996-04-02 | Micron Semiconductor, Inc. | System for compensating against wafer edge heat loss in rapid thermal processing |
| US5532457A (en) * | 1994-06-22 | 1996-07-02 | International Business Machines Corporation | Modified quartz plate to provide non-uniform light source |
| US6454863B1 (en) * | 1998-11-19 | 2002-09-24 | Asm America, Inc. | Compact process chamber for improved process uniformity |
| US7169233B2 (en) | 2003-11-21 | 2007-01-30 | Asm America, Inc. | Reactor chamber |
| CN105027270A (en) * | 2013-03-11 | 2015-11-04 | 应用材料公司 | Pyrometry filter for thermal process chamber |
| JP2016225429A (en) * | 2015-05-29 | 2016-12-28 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment apparatus |
| JP2018182153A (en) * | 2017-04-18 | 2018-11-15 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment apparatus |
| JP2019021828A (en) * | 2017-07-20 | 2019-02-07 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment apparatus |
| JP2019021738A (en) * | 2017-07-14 | 2019-02-07 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment apparatus |
| KR20190104726A (en) * | 2018-03-02 | 2019-09-11 | 주성엔지니어링(주) | Apparatus for treating substrate |
-
1984
- 1984-02-01 JP JP1731784A patent/JPS60161616A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0320971A2 (en) * | 1987-12-18 | 1989-06-21 | Kabushiki Kaisha Toshiba | Epitaxial growth apparatus |
| EP0320971A3 (en) * | 1987-12-18 | 1990-09-26 | Kabushiki Kaisha Toshiba | Epitaxial growth apparatus |
| US5504831A (en) * | 1993-11-10 | 1996-04-02 | Micron Semiconductor, Inc. | System for compensating against wafer edge heat loss in rapid thermal processing |
| US5719991A (en) * | 1993-11-10 | 1998-02-17 | Micron Technology, Inc. | System for compensating against wafer edge heat loss in rapid thermal processing |
| US5452396A (en) * | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
| US5577157A (en) * | 1994-02-07 | 1996-11-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
| US5532457A (en) * | 1994-06-22 | 1996-07-02 | International Business Machines Corporation | Modified quartz plate to provide non-uniform light source |
| US5648005A (en) * | 1994-06-22 | 1997-07-15 | International Business Machines Corporation | Modified quartz plate to provide non-uniform light source |
| US6454863B1 (en) * | 1998-11-19 | 2002-09-24 | Asm America, Inc. | Compact process chamber for improved process uniformity |
| US7169233B2 (en) | 2003-11-21 | 2007-01-30 | Asm America, Inc. | Reactor chamber |
| CN105027270A (en) * | 2013-03-11 | 2015-11-04 | 应用材料公司 | Pyrometry filter for thermal process chamber |
| US9786529B2 (en) | 2013-03-11 | 2017-10-10 | Applied Materials, Inc. | Pyrometry filter for thermal process chamber |
| CN108598017A (en) * | 2013-03-11 | 2018-09-28 | 应用材料公司 | High temperature measurement filter for thermal processing chamber |
| US10147623B2 (en) | 2013-03-11 | 2018-12-04 | Applied Materials, Inc. | Pyrometry filter for thermal process chamber |
| CN108598017B (en) * | 2013-03-11 | 2021-12-31 | 应用材料公司 | Pyrometric filter for thermal processing chamber |
| JP2016225429A (en) * | 2015-05-29 | 2016-12-28 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment apparatus |
| US10153184B2 (en) | 2015-05-29 | 2018-12-11 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus |
| JP2018182153A (en) * | 2017-04-18 | 2018-11-15 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment apparatus |
| JP2019021738A (en) * | 2017-07-14 | 2019-02-07 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment apparatus |
| US11328941B2 (en) | 2017-07-14 | 2022-05-10 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus |
| JP2019021828A (en) * | 2017-07-20 | 2019-02-07 | 株式会社Ｓｃｒｅｅｎホールディングス | Thermal treatment apparatus |
| KR20190104726A (en) * | 2018-03-02 | 2019-09-11 | 주성엔지니어링(주) | Apparatus for treating substrate |
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