JPS5986215A - Vapor growth method of gallium arsenide - Google Patents
Vapor growth method of gallium arsenideInfo
- Publication number
- JPS5986215A JPS5986215A JP19720882A JP19720882A JPS5986215A JP S5986215 A JPS5986215 A JP S5986215A JP 19720882 A JP19720882 A JP 19720882A JP 19720882 A JP19720882 A JP 19720882A JP S5986215 A JPS5986215 A JP S5986215A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- epitaxial growth
- carrier concentration
- growth layer
- starting material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明はヒ化ガリウム（ＧａＡｅ）結晶の気相成長方
法に係り、特にその成長結晶中は不純物元素の濃度こう
配を形成する方法に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for vapor phase growth of gallium arsenide (GaAe) crystals, and particularly to a method for forming a concentration gradient of impurity elements in the grown crystal. .
気相成長法は基板上に薄膜層を形成する方法として広く
用いられている。そして、近年、半導体素子の特性向上
のために、多層エピタキシャル成長層や不純物濃度にこ
う配を有する成長層が要求されるようになってきた。Vapor phase growth is widely used as a method for forming thin film layers on substrates. In recent years, in order to improve the characteristics of semiconductor devices, there has been a demand for multilayer epitaxial growth layers and growth layers having a gradient in impurity concentration.
例えば、ＧａＡｏ電界効果トランジスタ（ＧａＡｓＦＥ
Ｔ）では通常半絶縁性ＧａＡθ基板上に高抵抗のバッフ
ァ層を気相成長させ、次いで不純物を添加したｎ形動作
層を連続して成長させており、このｎ形動作層は吠面に
向ってキャリヤ濃度が減少するようにすることによって
、トランジスタの特性が向上することが研究の結果判明
してきた。For example, GaAo field effect transistor (GaAsFE)
In T), a high-resistance buffer layer is usually grown in vapor phase on a semi-insulating GaAθ substrate, and then an impurity-doped n-type active layer is successively grown. As a result of research, it has been found that the characteristics of transistors can be improved by reducing the carrier concentration.
第１図は従来から用いられているエピタキシャル成長装
置を示す概略断面図で、（１）は反応管、（２）は原料
Ｇｅ、 、’ ［３’ｌはその上にエピタキシャル成長
させるべき基板、（４ａ）Ｉ （４ｂ）は反応管＋１１
を所望の温度に加熱する加熱炉で、（４ａ）は一定温度
分布を、（４ｂ）は５〜ｂ
に形成されている。（６）は三塩化ヒ素（Ａｓ ａｔａ
） 用バブル容器、（６）はキャリヤガスとしての水
素（Ｈ２）の供給管、（７）はＨ２ガスの流量計、（８
）は不純物ガス〔通常は硫化水素（）Ｉ２Ｅｌ）ガス〕
のボンベ、（９）は不純物ガスの流量計、（１０）はバ
ブル容器（６）の出力バルブ、（＋＋）はキャリヤガス
の直接反応管ｆｉ＋への供給を開閉するバルブ、θ鎖は
キャリヤガスのバブル容器（５）への供給を開閉するバ
ルブ、（ｌ（９）は不純物ガスボンベ（８）の出力バル
ブ、０４）は反応管ｆｉｌの排気管である。FIG. 1 is a schematic cross-sectional view showing a conventionally used epitaxial growth apparatus, in which (1) is a reaction tube, (2) is a raw material Ge, ,'[3'l is a substrate on which epitaxial growth is to be made, (4a )I (4b) is reaction tube +11
(4a) has a constant temperature distribution, and (4b) has a heating furnace for heating to a desired temperature. (6) is arsenic trichloride (As ata
), (6) is a supply pipe for hydrogen (H2) as a carrier gas, (7) is a flow meter for H2 gas, (8
) is an impurity gas [usually hydrogen sulfide ()I2El) gas]
cylinder, (9) is the impurity gas flow meter, (10) is the output valve of the bubble container (6), (++) is the valve that opens and closes the supply of carrier gas directly to the reaction tube fi+, and the θ chain is the carrier gas (l(9) is the output valve of the impurity gas cylinder (8), and 04 is the exhaust pipe of the reaction tube fil.
この装置の通常の動作は周知であるので簡単に説明する
。最初バルブｔｔｏｌ 、 （１２１、Ｑ３）を閉じ、
バルブ（ＩＩ）のみを開いて供給管（６）からのＨ２ガ
スを反応管＋１１内へ導いて反応管ｆｉｌ内がＨ２ガス
の流れで満されるようにする。ついで、バルブ（１１）
、 ９２＋を切換えて、バルブ（ｌＯ）を開くことに
よって、Ｈ２ガスを流量計（７）を介してバブル容器（
５）に導きバブルさせる５
ことによって１Ｃｔ３ガスをＨ２ガスをキャリヤガスと
して反応管（１）へ導入することによってエピタキシャ
ル成長が開始される。このようにして所望の厚さのバッ
ファ層が基板（３）の上に形成された後に、バルブθ３
）を開いて不純物ガスをボンベ（８）から流量計（９）
を介して反応管（１）へ導入し、ｎ形動外層を成長させ
る訳である。The normal operation of this device is well known and will be briefly described. First close the valve ttol, (121, Q3),
Only the valve (II) is opened to introduce H2 gas from the supply pipe (6) into the reaction tube +11 so that the inside of the reaction tube fil is filled with the flow of H2 gas. Next, the valve (11)
, 92+ and open the valve (lO), the H2 gas is passed through the flow meter (7) into the bubble container (
Epitaxial growth is started by introducing 1Ct3 gas into the reaction tube (1) using H2 gas as a carrier gas. After a buffer layer of desired thickness is formed on the substrate (3) in this way, the valve θ3
) to drain the impurity gas from the cylinder (8) to the flow meter (9).
It is introduced into the reaction tube (1) through the tube to grow an n-type outer layer.
このとき、キャリヤ濃度に所望のこう配をもたせるため
には、流量計（９）を見ながらバルブ０渇を調整してｎ
形動外層の形成中不純物ガスの供給量を連続して変化さ
せることが８裂であるが、この制御操作がデリケートで
あるので、再現性よく所望のキャリヤ濃度こう配を有す
るエピタキシャル成長層を得ることは困難であった。At this time, in order to give the carrier concentration a desired gradient, adjust the valve 0 while watching the flow meter (9).
It is important to continuously change the amount of impurity gas supplied during the formation of the outer layer, but since this control operation is delicate, it is difficult to obtain an epitaxially grown layer with a desired carrier concentration gradient with good reproducibility. It was difficult.
この発明は基板温度、キャリヤガス流量などの他の祭件
を一定にしておいて、原料Ｇ８の温度を変えるのみでエ
ピタキシャル成長層のキャリヤ濃度が変化するとの知見
もとづいて、原料Ｇａの温度を徐々に変化させることに
よって、キャリヤ濃度に所望のこう配を有するＧａＡｓ
結晶の気相成長方法を提供するものである。This invention is based on the knowledge that the carrier concentration in the epitaxial growth layer changes simply by changing the temperature of the raw material G8 while keeping other conditions constant such as the substrate temperature and carrier gas flow rate, and gradually changes the temperature of the raw material Ga. GaAs with a desired gradient in carrier concentration by varying the
A method for vapor phase growth of crystals is provided.
ｉ１図に示した通りのエピタキシャル成長装置に用いて
、Ｈ２に対するＡｓ ｃｔａの比率を５Ｘ１０″′３と
して、総１（２流量０．８１１分で原料Ｇａ （２１の
温度を８５０℃、基板（３）の温度を１３０℃に保って
成長させたところ、キャリヤ濃度が４ＸｌＯａｍ の
エピタキシャル成長層を得たｏまた、Ｈ２に対するＡｓ
Ｏｔ３の比率、ガス流電及び基板（３）の温度を一定
にして、原料Ｇａ ｆ２１の温度を８３０℃にした場合
はキャリヤ濃度２．２Ｘ１０１７ａｍ−”、原料（）ａ
（２１の温度を８１０℃とするとキャリヤ（Ｑ ｉ
１．５ ＸＩＯ”ａｍ−”のエピタキシャル成長ｊ−を
得た。第２図はこの関係を示ず特性図で、横軸は原料Ｇ
ａと基板との間の温度差、縦軸は成長結晶のキャリヤ儀
度を示す。すなわち、成長中に原料Ｇａ＋２１の温度の
み８５０℃からＢｏｏ”Ｃ！で徐々に降下させると、そ
れに応じたキャリヤ９１度こう配を肩丈るエピタキシャ
ル成長層を得た。ぞして、キャリヤ濃度のこう配は加熱
炉（４ａ）の温度の降下速実を変えることによつで制御
できる。当然ながら、加熱炉（４ａ）の温度の降下速度
か大きいほどキャリヤ濃度こう配は急峻になる。この温
匿降下の制御は電気回路を利用して自動的に行なわせる
ことは容易である。Using an epitaxial growth apparatus as shown in Figure i1, the ratio of As cta to H2 was set to 5X10'''3, and the temperature of the raw material Ga (21) was 850°C at a flow rate of 0.811 min, and the substrate (3) When grown at a temperature of 130°C, an epitaxially grown layer with a carrier concentration of 4XlOam was obtained.
When the ratio of Ot3, the gas current, and the temperature of the substrate (3) are kept constant and the temperature of the raw material Ga f21 is set to 830°C, the carrier concentration is 2.2X1017 am-'', and the raw material ()a is
(If the temperature of 21 is 810℃, the carrier (Q i
1.5 Epitaxial growth of XIO "am-" was obtained. Figure 2 is a characteristic diagram that does not show this relationship, and the horizontal axis is the raw material G.
The temperature difference between a and the substrate, the vertical axis indicates the carrier density of the growing crystal. That is, by gradually lowering only the temperature of the raw material Ga+21 from 850°C to Boo'C! during growth, an epitaxially grown layer with a corresponding carrier gradient of 91° was obtained.Thus, the carrier concentration gradient was It can be controlled by changing the rate of decrease in the temperature of the heating furnace (4a).Of course, the higher the rate of decrease in the temperature of the heating furnace (4a), the steeper the carrier concentration gradient. Control can be easily performed automatically using an electric circuit.
以上龜明したように、この発明の方法によれば原料Ｇａ
の温度を変化させるだけで、エピタキシャル成長層に所
望の不純物濃度分布を形成することができ、この温度変
化の速度を適尚に選ぶことによって任意の不純物濃度こ
う配を得られる。As explained above, according to the method of this invention, the raw material Ga
A desired impurity concentration distribution can be formed in the epitaxially grown layer by simply changing the temperature of the epitaxially grown layer, and by appropriately selecting the rate of temperature change, an arbitrary impurity concentration gradient can be obtained.
第１１図はこの発明を適用できる従来からのエピタキシ
ャル成長装置を示す概略断面図、第２図は第１図の装ｆ
ｊｆを用いた場合の原料Ｇａと基板との温度差とエピタ
キシャル成長層のキャリヤ濃度との関係の一例を示す特
性図である。
図において、（１）は反応管、（２）は原料となるＧａ
。
（３）は基板、（４ａ）、 （４ｂ）は加熱炉、（５）
はＡＲＯＺａ用バブル容器、（６）はギヤリヤガス供給
管、（８）は不純物ガスボンベ、（１４）は排気管であ
る。FIG. 11 is a schematic cross-sectional view showing a conventional epitaxial growth apparatus to which the present invention can be applied, and FIG.
FIG. 3 is a characteristic diagram showing an example of the relationship between the temperature difference between the raw material Ga and the substrate and the carrier concentration of the epitaxially grown layer when using jf. In the figure, (1) is the reaction tube, (2) is the raw material Ga
. (3) is the substrate, (4a), (4b) is the heating furnace, (5)
is a bubble container for AROZa, (6) is a gear rear gas supply pipe, (8) is an impurity gas cylinder, and (14) is an exhaust pipe.
Claims (1)
るガリウムを置き、かつヒ素を含むキャリヤガスおよび
不純物ガスを流し、上記ガリウムに対して上記ガス流の
下流側に置かれた基板上に不純物を含むヒ化ガリウムを
気相成長させるに当って、上記原料となるガリウムの温
度を変化させて所望の不純物濃度分布の気相成長層を得
ることを特徴とするヒ化ガリウム結晶の気相成長方法。111 Gallium as a raw material is placed in a reaction tube placed in a heating furnace, and a carrier gas and impurity gas containing arsenic are flowed, and a substrate placed on the downstream side of the gas flow with respect to the gallium is placed. A vapor phase growth method of gallium arsenide crystal, characterized in that when gallium arsenide containing impurities is grown in a vapor phase, the temperature of the raw material gallium is changed to obtain a vapor phase growth layer with a desired impurity concentration distribution. Phase growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19720882A JPS5986215A (en) | 1982-11-08 | 1982-11-08 | Vapor growth method of gallium arsenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19720882A JPS5986215A (en) | 1982-11-08 | 1982-11-08 | Vapor growth method of gallium arsenide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5986215A true JPS5986215A (en) | 1984-05-18 |
Family
ID=16370616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19720882A Pending JPS5986215A (en) | 1982-11-08 | 1982-11-08 | Vapor growth method of gallium arsenide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5986215A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD176Z (en) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for the manufacture of high-voltage diode |
-
1982
- 1982-11-08 JP JP19720882A patent/JPS5986215A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD176Z (en) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for the manufacture of high-voltage diode |
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