JPS5979508A - Vertical magnetic recording medium - Google Patents
Vertical magnetic recording mediumInfo
- Publication number
- JPS5979508A JPS5979508A JP57190476A JP19047682A JPS5979508A JP S5979508 A JPS5979508 A JP S5979508A JP 57190476 A JP57190476 A JP 57190476A JP 19047682 A JP19047682 A JP 19047682A JP S5979508 A JPS5979508 A JP S5979508A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- sputtering
- recording medium
- film
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011572 manganese Substances 0.000 claims abstract description 17
- 239000010936 titanium Substances 0.000 claims abstract description 14
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 14
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 12
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 8
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 18
- 239000010949 copper Substances 0.000 abstract description 13
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- -1 Polyethylene Polymers 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 1
- 239000004698 Polyethylene Substances 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000000313 electron-beam-induced deposition Methods 0.000 abstract 1
- 238000007733 ion plating Methods 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- 229920000573 polyethylene Polymers 0.000 abstract 1
- 239000010408 film Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 23
- 230000005415 magnetization Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000008188 pellet Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229920002799 BoPET Polymers 0.000 description 4
- 239000005041 Mylar™ Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910002056 binary alloy Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910000544 Rb alloy Inorganic materials 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
Landscapes
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、磁気記録材料、よジ詳しく述べるならば、コ
バルト、ルテニウム垂直磁気記録媒体に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to magnetic recording materials, and more particularly to cobalt, ruthenium perpendicular magnetic recording media.
磁気記録媒体は、コンピューターの記憶装置に用いられ
一般に記録媒体の長手方向に磁化させている。しかしな
がらこのような磁化方式では記録密度の高密度化に限界
があり、はるかに旨密度化が可能となる記録媒体の面に
垂直な方向に磁化する方式が提案されている。そして、
磁性薄膜に対して垂直方向Ｖ：磁化可能な垂直磁気記録
媒体にはコバルト、ルテニウムカ使用され、スパッタリ
ングによって基板上に薄膜を形成している。垂直記録媒
体の作成には、膜面垂直方向の反磁界に打勝つ垂直磁気
異方性を付与することが必要である。Magnetic recording media are used in computer storage devices and are generally magnetized in the longitudinal direction of the recording media. However, such a magnetization method has a limit in increasing the recording density, and a method has been proposed in which magnetization is performed in a direction perpendicular to the surface of the recording medium, which enables a much higher density. and,
Perpendicular direction V to the magnetic thin film: Cobalt and ruthenium are used in the magnetizable perpendicular magnetic recording medium, and a thin film is formed on the substrate by sputtering. To create a perpendicular recording medium, it is necessary to provide perpendicular magnetic anisotropy that overcomes the demagnetizing field in the direction perpendicular to the film plane.
最密六方晶コバルトはＣ軸方向に大きい結晶磁気異方性
を有しているが、磁化が大きいために形状磁気異方性エ
ネルギーが大きく、垂直磁気異方性膜は得られない。そ
のため、ルテニウム（以下島と略す）を添加することに
よ）飽和Ｄｋ化を減少させるとともに、最密六方晶のＣ
軸を基板手直方向に強く配向させることにより、垂直磁
気異方性膜を作成することが可能になる。ところが、超
高密度磁気記録を実現させた場合、１つのビットにふ・
ける減磁界は、薄膜時の最大の減磁界４πＭＢ （ＭＢ
け飽和徳化）Ｋよシ相当減る筈であシ、必ずしもＪ（ｕ
＞ ２πＭＳ。Close-packed hexagonal cobalt has large magnetocrystalline anisotropy in the C-axis direction, but because of its large magnetization, the shape magnetic anisotropy energy is large, making it impossible to obtain a perpendicular magnetic anisotropic film. Therefore, by adding ruthenium (hereinafter abbreviated as island), it is possible to reduce the saturation Dk and to
By strongly orienting the axis in the direction perpendicular to the substrate, it becomes possible to create a perpendicular magnetic anisotropic film. However, when ultra-high-density magnetic recording is realized, each bit has a
The maximum demagnetizing field for thin film is 4πMB (MB
ke saturation virtue)
>2πMS.
（Ｋｕは磁化膜の結晶異方性定数である）の条件を滴た
す必要はないと考えられる。It is considered unnecessary to add the condition (Ku is the crystal anisotropy constant of the magnetized film).
一方、ＣＤ−Ｒυ垂直磁化丹は、バルクの場合コバルト
の飽和磁化がＲ，含有惜が増えるに従い、直線的に減少
するのに対し、その直線よシ、やや高い飽和磁化の減少
傾向を示していることがら、結晶粒界にＲｕが偏析して
いることが予想され、最近膜の断面のオージェ電子分光
分析によって、実証された。つまル、飽和磁化を下げ、
減磁界を小さくするために、結晶粒中適度ＫＲｕが混入
することと、結晶粒界にＲｕが偏析し、非磁性層を形成
干ることによって、磁壁移動による磁化機構を減少させ
、結晶粒間を磁気的に分離させて、単磁区粒子の磁化回
転のみにすることが理想的な垂直磁気記録媒体と考えら
れる。On the other hand, in the case of CD-Rυ perpendicular magnetization, while the saturation magnetization of cobalt in the bulk case decreases linearly as the content of R increases, the saturation magnetization tends to decrease at a slightly higher rate along the straight line. Therefore, it is expected that Ru is segregated at the grain boundaries, and this was recently demonstrated by Auger electron spectroscopy analysis of a cross section of the film. Tsuru, lowers the saturation magnetization,
In order to reduce the demagnetizing field, a moderate amount of KRu is mixed into the crystal grains, and Ru is segregated at the grain boundaries to form a nonmagnetic layer, thereby reducing the magnetization mechanism caused by domain wall movement and increasing the amount of KRu between the grains. An ideal perpendicular magnetic recording medium is considered to be one in which magnetically separates the magnetic field particles so that only the magnetization rotation of single domain particles occurs.
従来のｃｍ ａ、、垂直磁化記録媒体は、膜の垂直異
方性（特にここでは垂直異方性磁界Ｈｋで表わす。Conventional perpendicular magnetization recording media have a perpendicular anisotropy of the film (particularly expressed here as a perpendicular anisotropy magnetic field Hk).
）を上げると垂直方向の保磁力Ｈｃ（１）も上昇してし
まう。), the vertical coercive force Hc(1) also increases.
４インチＣＱターゲットにＲｕペレットヲ赴いて１２．
５μｍ厚のポリイミドにＲＦマグネトロンスパッタ形成
させた例を以下に記す。12. Go to Ru pellet on 4 inch CQ target.
An example in which 5 μm thick polyimide was formed by RF magnetron sputtering is described below.
例１ 初期真空度 ３×川−”ｔｏｒｒ投入電力
ＩＫＶ ７０払
時 間 １ ｈ’ｏｗｒにおける膜特
性は
「Ｒｕ量 ２］ （ｗｔ％）
例２ 初期真空度 ３，５ Ｘ Ｉｉｌ ｔｏｒｒ
投入電力 ２ＫＶ １２７川Ａ
時 間 川ηｒｉｎ
における、膜特性は
／Ｒｕ″ ２２ （ｗｔ％）
１ “−
であった。これは投入電力を変えた場合の例であるが、
基板加熱した場合も同様の傾向を示す。つまシ、熱が膜
形成時にかかることによって、保磁力ＨＣも異方性磁界
Ｈｋも上昇する。ところが、これは、現実に非常に不都
合である。垂直記録媒体は例２のよう［Ｋ Ｈｋが当然
望ましいのであるが、ＨＣｌ１ｌが大きくなシすぎると
、フエフィト、パーマロイ、センダスト、アモルファス
軟磁性体等を用いた磁気ヘッドでは、飽和させる為に、
ヘッドに流す電流を非常に太きくしなければならない。Example 1 Initial degree of vacuum 3 x river-”torr input power
The film characteristics at IKV 70 payment time 1 h'owr are ``Ru amount 2] (wt%) Example 2 Initial vacuum degree 3.5 X Iil torr
At an input power of 2 KV, a time of 127 A, and a time of ηrin, the film properties were /Ru''22 (wt%) 1''-. This is an example of changing the input power,
A similar tendency is shown when the substrate is heated. As heat is applied during film formation, both the coercive force HC and the anisotropic magnetic field Hk increase. However, this is actually very inconvenient. For the perpendicular recording medium, as in Example 2, [KHk is obviously desirable, but if HCl1l is too large, magnetic heads using Fephite, Permalloy, Sendust, amorphous soft magnetic materials, etc. will be saturated.
The current that flows through the head must be made very large.
たとえ、飽和記録できても消去が困難であったりオーバ
ーフィト特性が劣化してしまうという欠点が生じる。一
方、例１のよう々場合には、藺き込み電流及び、オーバ
フィトの特性は改善さ力、るが、垂直磁気記録の本来の
垂直異方性磁界が小であるため、高密度記録における磁
化反転が・／ヤーブで々く、記録密度特性が悪化してし
まう。Even if saturation recording is possible, there are drawbacks such as difficulty in erasing and deterioration of overfit characteristics. On the other hand, in a case like Example 1, the characteristics of inrush current and overfit are improved, but since the original perpendicular anisotropy field of perpendicular magnetic recording is small, the magnetization in high-density recording is The reversal is severe and the recording density characteristics deteriorate.
本発明はかかる点を鑑み、ｃｏ−Ｒｕ系に更に第三元素
として、チタン、バナジウム、マンガン、銅のうち少な
くとも一種を添加することにより、これらの離点を解決
したものである。In view of these points, the present invention solves these problems by adding at least one of titanium, vanadium, manganese, and copper as a third element to the co-Ru system.
本発明の目的は、結晶粒間を磁気的に分離させ超高密度
磁気配録媒体を提供することにある。An object of the present invention is to provide an ultra-high density magnetic recording medium that magnetically separates crystal grains.
本発明の他の目的はＩＱＱ Ｋ Ｆ ＲＰ 工以上の超
高密度磁気記録媒体における出力及び分解能を飛躍的に
高めることにある。Another object of the present invention is to dramatically increase the output and resolution of an ultra-high density magnetic recording medium of IQQKFRP or higher.
本発明けＣｏ −Ｒｕ Ｋ更にｌ（１重量：係（以下ｗ
ｔ％と略′＋）までのチタン（以下Ｔｉと略＋）、バナ
ジウムＣ以下Ｖと略す）、マンガン（り下Ｍｎと略す）
、銅Ｃ以下（４と略す）のうち少なくとも一種を加える
ことによシ明らかに効果を発揮する。Ｔｉ、 Ｖ 、
）Ａ ｎ、 Ｃｕの添加量が１０ｗｔ％を超えると膜の
結晶性が著しく低下し、膜の垂直磁気異方性が急激に落
ちる。従来ｃ、） −Ｒ［２元系ではＲｌＬが１２〜３
ｒＪＷｔ係の範囲で磁気特性、結晶配向とも良好である
とされていたが、本発明のＴ？、 、 Ｖ 、Ｍｎ 、
Ｃｕ添加けよってＲｕｋｒ、の下限が広が９二元系の場
合よりも良い特性を示した。第１図に本発明の効果を示
す。表中の数字は、Ｃｏ中のＲｔｔとＴｊ 、 Ｖ 、
Ｍｎ 。The present invention also includes Co-Ru K (1 weight: weight (hereinafter w)
titanium (hereinafter referred to as Ti), vanadium (hereinafter referred to as V), manganese (hereinafter referred to as Mn).
, copper C or less (abbreviated as 4) clearly exhibits an effect. Ti, V,
) When the amount of Cu added exceeds 10 wt%, the crystallinity of the film is significantly reduced, and the perpendicular magnetic anisotropy of the film is sharply reduced. Conventional c,) -R[In binary system, RlL is 12 to 3
It was said that the magnetic properties and crystal orientation were good within the rJWt range, but the T? , , V , Mn ,
Due to the addition of Cu, the lower limit of Rukr was broadened, and better characteristics were exhibited than in the case of the 9-element system. FIG. 1 shows the effects of the present invention. The numbers in the table are Rtt and Tj in Co, V,
Mn.
ＣＵの含有量を重量係で表示した。斜線部が本発明によ
って垂直磁気異方性が改善された領域でその他は本発明
の効果を示さない領域である。The content of CU was expressed by weight. The shaded area is the area where the perpendicular magnetic anisotropy has been improved by the present invention, and the other areas are areas where the effect of the present invention is not exhibited.
具体例として、ＤＣスパッタ、ＲＦスパッタ。Specific examples include DC sputtering and RF sputtering.
マグネトロンスパッタ、対向ターゲット方式スパツタ、
イオンビームスパッタ、イオンブレーティング電子ビー
ム蒸着、メッキ等薄膜作製法あるいはポリエチレンテレ
フタヲート、ポリイミド、ガヲヌ、アルマイト処理した
アルミ基板等の基板材質にかかわらず、本発明のＴｉ、
Ｖ、Ｍｎ、Ｃｕ添加効果がある。一般に、垂直磁気記録
媒体として、垂直磁気記録層単層の場合とその下に裏う
ち層として高透磁率層を設ける場合があるが、本発明は
、裏うぢ高透磁率層の材質、例えばパーマロイ、ＣＯ系
、Ｆｅ糸、アモルファス高透磁率薄膜を各種変更しても
なシたつ。Magnetron sputtering, facing target sputtering,
The Ti of the present invention
There is an effect of adding V, Mn, and Cu. In general, perpendicular magnetic recording media may have a single perpendicular magnetic recording layer or may have a high magnetic permeability layer provided thereunder as a backing layer. Permalloy, CO system, Fe thread, amorphous high permeability thin film can be changed in various ways.
以下、実施例にもとづいて、不発σノを説明する。Hereinafter, misfire σ will be explained based on examples.
実施例１
ポリイミド基板にＲＦ電源でｃ、） −Ｒ及び、 ＣＯ
−Ｒ−Ｔｚ垂直磁化膜を形成した。クーゲットは、ｃＱ
−１３ｗｔ％Ｒｕ 、 Ｃｏ −１６ｗｔ％Ｒｕ 、
Ｃｏ −２０ｗｔｏｌｙＲｕと３種類のＣ，）−Ｒ，
、合金ターゲットを用いＡ二。ｃｏ−Ｒｊｌ−Ｔｉ三元
系垂直磁化膜については、ｃ（、−Ｒｕ合金ターゲット
上に５Ｘ５Ｘ１＋ｌ！ＪのサイズのＴｉペレットを分布
が均一になるように配置して各種ＯＴｉ川の薄膜を作成
した。各成分の含有量けＸＭ Ａにて定期を行った。Example 1 Polyimide substrate with RF power c, ) -R and CO
-R-Tz perpendicular magnetization film was formed. Couget is cQ
-13wt%Ru, Co -16wt%Ru,
Co-20wtolyRu and three types of C,)-R,
, A2 using an alloy target. For the co-Rjl-Ti ternary perpendicularly magnetized film, various OTi thin films were created by arranging Ti pellets with a size of 5X5X1+l!J on a c(,-Ru alloy target so that the distribution was uniform). .The content of each component was regularly checked using XMA.
スパッタ条件
スパッタ前にペルジャーのベーキング及びポリイミド基
板のガス出しを行った。スパッタ中は、基板ホルダーを
水冷した。スパッタ時間は、１５分で涯１；Ｊ厚ばＦＪ
ｏ、６μｍであった。Sputtering conditions Before sputtering, Pelger baking and degassing of the polyimide substrate were performed. During sputtering, the substrate holder was water-cooled. Sputtering time is 15 minutes per life; J Atsuba FJ
o, 6 μm.
この結果、１１）ｗｔ％までのＴｉを添加することによ
υ、垂直磁気異方性が約２）チ向上した。As a result, by adding up to 11) wt% of Ti, the perpendicular magnetic anisotropy was improved by about 2).
又Ｒｅ量を増加させると異方性磁界Ｈｋが最大となるＴ
ｉ量は少なくなった。更にＴｉ針がｉｌｌ ｗｔチを越
えると結晶配向性は急速に悪化すると共に、垂直磁気異
方性も急激に低くなった。Also, when the amount of Re is increased, the anisotropic magnetic field Hk becomes maximum T
The amount of i has decreased. Furthermore, when the Ti needle exceeded the illuwt tip, the crystal orientation deteriorated rapidly and the perpendicular magnetic anisotropy also decreased rapidly.
実施例２
電子ビーム蒸発源を三個備え、基板と電子ビーム蒸発源
の間に高周波を印加するコイルを備えたイオンブレーテ
ィング装置によりポリイミドテープにｃ、） −Ｒ，−
Ｃ１Ｌ三元系メディアを作製した。Example 2 An ion blating device equipped with three electron beam evaporation sources and a coil for applying high frequency between the substrate and the electron beam evaporation source c, ) -R, - was applied to a polyimide tape.
C1L ternary media was produced.
各電子ビーム蒸発源にはそれぞｆｐｃｎ 、 Ｒｒｔ、
Ｃｕを充填し各電子ビームのパワーをコントロールする
ことによシ付着膜の組成を変えることが可能である。成
膜速度は約５００Ａ／、９ ｅ ｃであった。Each electron beam evaporation source has fpcn, Rrt,
By filling Cu and controlling the power of each electron beam, it is possible to change the composition of the deposited film. The film formation rate was approximately 500 A/, 9 eC.
実験はＣＯとＲｕの蒸発源のパワーの比を三段階に変更
して生成膜のｃｏとＲｕの重量比が９０：１０，８５：
１５，８０：２０のものに対してＣ％のパワーを変動さ
せて、三種の元素の組成を変更した。いずれの場合にお
いてもＣｕの量が川ｗｔ％を越えるとＨｋけ急激に低下
した。その様子をｊｕｌ’！２図に示す。○印はｃｏと
ｕｈＯ比が、９０：１０．Δ印はＣＯとＲｕＯ比が８５
：１５、Ｘ印はＣＯとＲ１Ｌの比が８０：２０である。In the experiment, the power ratio of the CO and Ru evaporation sources was changed in three stages, and the weight ratio of Co and Ru in the produced film was 90:10, 85:
The composition of the three elements was changed by varying the power of C% with respect to the one of 15, 80:20. In either case, when the amount of Cu exceeded the weight percent of the weight, the amount of Hk decreased rapidly. Check out that scene! Shown in Figure 2. The circle mark indicates that the co to uhO ratio is 90:10. The Δ mark indicates a CO to RuO ratio of 85.
:15, and the X mark indicates a ratio of CO to R1L of 80:20.
実施例３
対向ターゲット方式スパッタ装置を用い、ビデオ用テー
プを作製し画像処理を行った。Example 3 A video tape was produced and image processed using a facing target sputtering device.
第３図に対向ターゲット方式スパッタ装置の概略図を示
す。Ｃｏ −Ｒｕ ２元系ターゲット１と専用の直流電
源（却下ＤＣ電源と記−ｔ）２とそれに対向して設けら
れたｃｍ−Ｒｕ−Ｍη三元系ターゲット３と専用のＤＣ
電源４からなシ、この対向したターゲット間に約３００
ガウスの磁界を発生京せ、基板５がプラズマにさらされ
ないようにペルジャーの外側に電磁石６を備えた構成で
ある。基板５は、ロール方式で巻き取れるように設計し
てあり、後方の加熱及び水冷可能及基板ホルダー７及び
それと連動したガイド棒によって土工に可動になってい
る。FIG. 3 shows a schematic diagram of a facing target type sputtering apparatus. A Co-Ru binary system target 1, a dedicated DC power supply (noted as DC power supply) 2, and a cm-Ru-Mη ternary system target 3 provided opposite thereto, and a dedicated DC power supply.
From power supply 4, there is approximately 300 mm between these opposing targets.
It generates a Gaussian magnetic field and includes an electromagnet 6 outside the Pelger to prevent the substrate 5 from being exposed to plasma. The substrate 5 is designed to be rolled up in a roll manner, and is movable in earthworks by means of a rear heating and water-cooling substrate holder 7 and a guide rod interlocked therewith.
スパッタ条件
Ｉ ターゲット、！Ｌ＆、’ｌ距ｔ１１Ｇ ４
ｍこの対向ターゲット方式スパッタ装置は、それぞれの
電極に電源を独立に設けているため、ＣＯ−Ｒｕ膜中の
Ｍ ７１量を変えるにはそれぞれターゲットに加えるパ
ワーを変えればよく、パワーを変えたことによるＩＮ厚
分布の変動は、基板ホルダー及び基板の上下によって制
御した。Sputtering conditions I target! L&,'l distance t11G 4
mThis facing target type sputtering equipment has an independent power supply for each electrode, so in order to change the amount of M71 in the CO-Ru film, it is only necessary to change the power applied to each target, and it is possible to change the power applied to each target. The variation in the IN thickness distribution was controlled by the substrate holder and the upper and lower positions of the substrate.
第４図に、Ｍｎ量を変えたときの△θ５０と、肋の変化
を示す。Ｍ ｎが０１ｗ６％以下の範囲では、ＨｋがＭ
７１．添加によって急激に上昇している。たたしＭｎが
１０ ｗｔ％以上添加されると△θ５ｏが異常に犬とな
り結晶性及びその配向性が悪化したと思われる。FIG. 4 shows changes in Δθ50 and ribs when the amount of Mn is changed. In the range where Mn is 01w6% or less, Hk is M
71. It is rapidly increasing due to addition. It is thought that when 10 wt% or more of Mn was added, Δθ5o became abnormally large and the crystallinity and orientation deteriorated.
第４図は、第２図の傾向と全く同イ４であり、膜形成装
置及び、基板による差はない。The tendency in FIG. 4 is exactly the same as that in FIG. 2, and there is no difference depending on the film forming apparatus and substrate.
実施例４
カウフマン型イオン源から引き出されたアルゴンイオン
ビームをターゲットに照射するイオンビームスパッタ装
置を用いガラス基板上にＣＱ −Ｒ＄−■三元系メディ
アを作製した。Example 4 A CQ-R$-■ ternary media was fabricated on a glass substrate using an ion beam sputtering device that irradiates a target with an argon ion beam extracted from a Kauffman type ion source.
Ｃｏ −１０ｗｔ％ Ｒｕ 、 Ｃｏ −１５ｗｔ％
Ｒｕ 、 Ｃｏ −２０ｗｔ％Ｒｕの三種のターゲット
上に５Ｍ３角で厚さ１悶のバナジウムペレットを］；に
せてイオンビームを照射シ、スパッタした。バナジウム
ペレットの個数及び配向によりガラス基板上に付着する
ＣＯ−Ｒｕ−■の組成が変った。いずれのターゲットを
用いた場合でもバナジウムが微量混入することによ多結
晶配向性及び垂直異方ｉ生磁界が向上するが、ノ；ナジ
ウムの月がｆｉｌ ｗｔ係を越えると結晶配向性及び垂
直異方性磁界のいずれも極端に悪化した。Co -10wt% Ru, Co -15wt%
Vanadium pellets of 5M square and 1 mm thick were irradiated with an ion beam and sputtered on three types of targets: Ru, Co-20wt%Ru. The composition of CO-Ru-■ deposited on the glass substrate changed depending on the number and orientation of vanadium pellets. No matter which target is used, polycrystalline orientation and perpendicular anisotropy i raw magnetic field are improved by mixing a small amount of vanadium; Both of the directional magnetic fields deteriorated extremely.
実施例５
前記８インチマグネトロンスパッタ装置を用い、記録再
生ｔｒ価用５インチクロッピーメディアを作製した。本
スパッタ装置は、３基の８インチターゲットを備えてお
シ、電極ＩＶｃは、ＣＯメタ−ゲット上膜組成がＣ０８
５ｚｒ１５（重量％表示）となるようにＺｒペレットを
置いたもの、電極２には、Ｃ０−１６ｗｔ％ Ｒ，１タ
ーゲツト上にＴ６ペレツトを膜組成が（Ｃｏ５４ｋｌｓ
）９１１ Ｔｉ４ となるように配置した。Example 5 Using the 8-inch magnetron sputtering apparatus described above, a 5-inch croppy media for recording and reproducing TR number was produced. This sputtering apparatus is equipped with three 8-inch targets, and the electrode IVc has a CO meta-target film composition of C08.
For electrode 2, T6 pellets were placed on a C0-16wt% R,1 target with a film composition of (Co54kls).
)911Ti4.
基板ハ、ｓｏμｍ厚ポリエチレンテレフタヲートを用い
た。一般にＰＥＴとか、マイラといわれているものであ
シ、耐熱性に乏しいため、ＤＣ電源によシ膜を形成した
。スパッタの順序としては、別々の基板にＣ０８ＳＺｒ
１−蕗をＯ０３μｍ同一条件で形成後、一つの基板には
、Ｃ０８４Ｒｕ１６膜をＯ０６μｍ別の基板には、（ｃ
ｏａ４ Ｒｕ１６ ）９６ Ｔ？：４ 膜をＱ 、 ５
１１ｍ、作製した。後でメディアにソリがムいように反
対面にも同一条件で膜を形成した。The substrate was made of soμm thick polyethylene terephthalate. Generally, PET or Mylar is used, and since it has poor heat resistance, a film was formed using a DC power source. The sputtering order is as follows: C08SZr on separate substrates.
1- After forming a film of O03μm under the same conditions, one substrate was coated with a C084Ru16 film of O06μm, and another substrate was coated with (c
oa4 Ru16 )96 T? :4 membrane Q, 5
11m was created. Later, a film was formed on the opposite side under the same conditions so that the media would not warp.
スパッタ条件
第５図に、本実施例によって作製したメチイアの構成を
示す。メディア八け、５０μｍ０８ｍマイラ面ＫＯ，３
ｚｚｍ厚のＣＱ８５Ｚｒ１５アモルファス軟磁性膜９と
帆５８ｍ厚のＣ０８４ＲｕＩ６垂直磁化股１０を形成し
たものであり、メディアＢは、５０ ｔｔｒｎ、マイラ
８の両面に０゜３μｍ厚のＣ０８５Ｚｒ１５アモルファ
ス軟磁性ｇｔｊｊ ９と０．６μｍ厚の←Ｃ０８４Ｒｕ
１６）９６ Ｔｊ４ 垂直磁化膜１１を形成したもの
である。Sputtering Conditions FIG. 5 shows the structure of the methias produced in this example. Media success, 50μm 08m mylar surface KO, 3
The media B consists of a CQ85Zr15 amorphous soft magnetic film 9 with a thickness of 0°3 μm and a C084RuI6 perpendicularly magnetized film 9 with a thickness of 58 m on both sides of Mylar 8 with a thickness of 0°3 μm. 0.6μm thick ←C084Ru
16)96Tj4 A perpendicular magnetization film 11 is formed.
メディアＡとメチイアＢを、１．３μｍ厚ノく−マロイ
主磁極−補助磁極タイブヘッドで記録再生したときの苦
己録密度特性を第６図に示す。第６図は、両対数グラフ
上でプロットしである。縦軸は、相対出ツバ桶軸は記録
密度を（Ｋ Ｆ’ ＲＰ Ｉ ）の単位で記しである。FIG. 6 shows the recording density characteristics when recording and reproducing media A and Mechia B using a 1.3 .mu.m thick main magnetic pole-auxiliary magnetic pole type head. FIG. 6 is plotted on a log-log graph. The vertical axis represents the recording density in units of (K F' RP I ).
同図から、メディアＢの方が、セカンドビーク、ザード
ピークの出力がかなシ大きくなっている。このことは、
Ｃｏ −Ｒｕ ｌｌｌ７Ｓ Ｉｃ Ｔ？：を添加したＧ
Ｏ−Ｒｕ −Ｔ？：三元糸垂直砧化膜が、実用上におい
ても、Ｃｏ−Ｒｕ二元系膜よりも優れており、１００Ｋ
ＦＲＰＩ以上の超高宮度住・気記録を十分可能ならしめ
うる。From the figure, it can be seen that the second peak and third peak outputs of media B are significantly larger. This means that
Co -Ru lll7S Ic T? : G added
O-Ru-T? : The ternary thread vertically kneaded membrane is superior to the Co-Ru binary membrane in practical terms, and the 100K
It is possible to record an extremely high degree of residence and energy that exceeds the FRPI.
実施例
８インチターゲットを有するマグネトロ〉・スパッタ装
置を用１．ｎ、５インチのアルマイト処理したアルミデ
ィスク上に、非磁性アモルファスＣｏ５゜Ｔ（Ｌ５ｏ（
重量％）を０．５μｍ形成させ、ディスクＣＶｃｉ’ｔ
Ｃｏ Ｒ４Ｒフｔ １６を０．３ｔｔｍ、ディスクＤ
Ｋば（ＣｏＲ４ＲｕＨ６）９６Ｍｎ４を０．３μｍ作製
した。構成図は、第７図に示した。Example 1. Using a magnetro sputtering device with an 8-inch target. A non-magnetic amorphous Co5°T (L5o(
% by weight) to form 0.5 μm, and the disk CVci't
Co R4R foot 16 0.3ttm, disk D
Kba(CoR4RuH6)96Mn4 was prepared to a thickness of 0.3 μm. The configuration diagram is shown in FIG.
０．５μｍ非磁性アモルファスＣｏ５ｏ−Ｔａ５ｏを下
層に設けたのは、アルマイト処理したディスク表面の粗
さを緩オＧさせることと、その上の００８４Ｒｕ１６と
（ＣＯｓ４Ｒｕ＋ｇ ）９５ Ｍ？＋、Ｓの磁気特性を
上昇させるためである。The reason why 0.5 μm non-magnetic amorphous Co5o-Ta5o was provided as the lower layer was to make the roughness of the alumite-treated disk surface gentle, and to form the 0084Ru16 and (COs4Ru+g)95M? This is to improve the magnetic properties of + and S.
上記２種のディスクを用い、５インチウインチェスター
ディスクドフィプで記録再生を行った。Using the two types of discs mentioned above, recording and reproduction were performed on a 5-inch Winchester disc.
浮上ｊＪを小さくするだめ、標準の３６００ｒｐｒｎが
ら、１１０００ｒｐに落とした。浮上量は、０．２μｍ
程度である。磁気ヘッドは、標準のＭｎ −Ｚｎ−フェ
ツイトで、ギヤツブは１μＷ、であっＡ二。ディスクＣ
とディスクＤを用いた場合の記録密度特性を第８図に示
す。縦軸は相対出力、横軸は記＠密度（単位はＫＦＲＰ
工）である。Ｍｎを４チ添加したディスクｐ・は、ディ
スクＣＫ較べ、セカンドビーク値で倍の出力を得ている
。In order to reduce the floating jJ, I dropped the standard 3600rprn to 11000rprn. The floating height is 0.2μm
That's about it. The magnetic head was a standard Mn-Zn-fetzite, and the gear was 1 μW. Disc C
FIG. 8 shows the recording density characteristics when disc D is used. The vertical axis is relative output, and the horizontal axis is density (unit: KFRP)
engineering). The disc P* with 4x of Mn added has twice the output in terms of second peak value compared to the disc CK.
なお、本発明は前記実施例に制約されない。Note that the present invention is not limited to the above embodiments.
Ｃｎ−Ｒｕ−Ｔ’＋： 、 Ｃｏ−Ｒｕ−Ｖ 、 Ｃ６
−Ｒｕ−＋４ｎ 。Cn-Ru-T'+: , Co-Ru-V, C6
-Ru-+4n.
ｃ（、−Ｒ７ｚ −Ｃｕ等の三元合金を作製しうるスパ
ック以外の他の手段、例えば、電子ビーム？Ａ＊ｓ メ
ッキ、ロール法等でもよい。寸だ、実施例２では、対向
ターゲット方式の改良装置を用いた例を挙げたが、ｃｏ
−Ｒ４−Ｃｕ三元合金で最良の垂直磁気異方性を有する
成分組成が決定されれば、対向する二個のターゲットと
もに同一三元材質を用い、同一の直流もしくは高周波電
源を使用する方式でもよい、、寸だ、実施例１及び実施
例３＆′ｉ、基板水冷しているが、基板加熱を行なうと
（：６− Ｒ（ｒ ２ ラミ１合金の特性は、Ｈｋ ＝
６８００と高くなるが、ｒｚ 、ｖ、Ｍｎ、Ｃ＄添加
により、ＨＣは史に高くなる。Methods other than spuck that can produce ternary alloys such as c(, -R7z -Cu, etc., such as electron beam?A*s plating, roll method, etc.) may also be used.In Example 2, the facing target method was used. An example was given using the improved device of co.
- Once the composition of the R4-Cu ternary alloy with the best perpendicular magnetic anisotropy has been determined, the two opposing targets will use the same ternary material and the same DC or high frequency power source. However, in Examples 1 and 3 &'i, the substrates were water cooled, but when the substrates were heated (:6-R(r2)
However, due to the addition of rz, v, Mn, and C$, HC becomes higher than ever.
本発明は、以上説明したように、Ｃｏ −Ｒｕ膜にＴｉ
、Ｖ、Ｍｎ、ＣｕをＩｎ ｗ量チ以下含有させ、ｃｏ−
Ｒｕ二元合金における垂直磁気異方性の限界を大きく上
回る垂直磁気記録媒体を作シ出し、現在の記録密度特性
を大幅に改善した超高密度記録媒体を作ジ出すものであ
る。As explained above, in the present invention, Ti is added to the Co-Ru film.
, V, Mn, and Cu are contained in an amount of Inw or less, and co-
The aim is to create a perpendicular magnetic recording medium that greatly exceeds the limit of perpendicular magnetic anisotropy in Ru binary alloys, and to create an ultra-high density recording medium that greatly improves current recording density characteristics.
第１図は本発明の効果を説明する図である。第２図は実
施例２を自兄明するだめのもので、Ｃ？７．添加量に対
する異方性磁界Ｈｋの変化を示したもの。
第３図及び第４図は、実施例３を説明するためのもので
、それぞれ装置の構成図、Ｍｎ量に対する膜特性の変化
を示したもの。第５図・第６図は、実施例５を説明する
ためのもので、メディアの構成図及びそれぞれのメディ
アの記録密度特性、第７図・第８図は、実施例６を説明
するだめのもので、磁気ディスクの構成図及びそれぞれ
の磁気ディスクの記録密度特性である。
■・＠ｅＯ−ＲＢ合金ターゲット
２・・直流電源
３ ＊ ＊ Ｃ０Ｒｕ Ｍｎ合金ターゲット４・・直
流電源
５・・基板
６・・電磁石
７・・基板ホルダー
８・ｅマイラ（５０ｔｔｍ ）
ｑ ｅ −ＣＱ −Ｚｒ膜（０，３ｔｔｍ ）ｌｆｌ
＊ ＊ ＣＯ−’Ｅｈｔ ガ［′ｌ （
０，６ａｒｎ、 ）１１−− ｃｏ−Ｒｕ −Ｔｉｐ
（０，６μｍ）１２・伊アルミディスク（１，９ツ）
ｊ：うＱ・アルマイト
１４ 書 ・ Ｃｏ −Ｔ（Ｚ ｆＪ％
（０，５μｍ）１５ ｍ −Ｃｏ Ｒｕガかあるいけ
ＣＯ−Ｒ２−Ｍｎ １ｌｊ２（００３μｍ）
以 上
出願人 株式会社ＭＩＮ訪鞘工舎
代理人 弁理士最 上 務
１ｉ ７図
０区 （ｗｔ％）
第２図
第４図
第５図
、ｉ：、’； ６図
第７図
記姓餐Ｌ （＜ｓ；ｖｒｘ）
第８０FIG. 1 is a diagram illustrating the effects of the present invention. FIG. 2 is a self-explanation of Example 2, and C? 7. The graph shows the change in anisotropic magnetic field Hk with respect to the amount added. FIGS. 3 and 4 are for explaining Example 3, and show the configuration of the apparatus and the change in film properties with respect to the amount of Mn, respectively. 5 and 6 are for explaining the fifth embodiment, and the configuration diagram of the media and the recording density characteristics of each medium, and FIGS. 7 and 8 are for explaining the sixth embodiment. This is a block diagram of a magnetic disk and recording density characteristics of each magnetic disk. ■・@eO-RB alloy target 2・・DC power supply 3 * * C0Ru Mn alloy target 4・・DC power supply 5・・Substrate 6・・Electromagnet 7・・Substrate holder 8・e Mylar (50ttm) q e −CQ − Zr film (0,3ttm)lfl
＊ ＊ CO-'Eht ga['l (
0,6arn, )11-- co-Ru-Tip
(0.6 μm) 12. Italian aluminum disk (1.9 pieces) J: UQ. Alumite 14. Co -T (Z fJ%
(0.5μm) 15 m -Co RugakarikeCO-R2-Mn 1lj2 (003μm) Applicant MIN Hashia Kosha Co., Ltd. Attorney Mogami Mogami 1i 7 Figure 0 (wt%) Figure 2 Figure 4 Figure 5, i:,'; Figure 6 Figure 7 Recording Supper L (<s;vrx) No. 80
Claims (1)
マンガン、鉛のうち少々くとも一秤を含有したことを特
徴とする垂直磁気異方性膜。In addition to cobalt and ruthenium, titanium, vanadium,
A perpendicular magnetic anisotropic film characterized by containing at least a small amount of manganese and lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57190476A JPS5979508A (en) | 1982-10-29 | 1982-10-29 | Vertical magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57190476A JPS5979508A (en) | 1982-10-29 | 1982-10-29 | Vertical magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5979508A true JPS5979508A (en) | 1984-05-08 |
Family
ID=16258737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57190476A Pending JPS5979508A (en) | 1982-10-29 | 1982-10-29 | Vertical magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5979508A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4923763A (en) * | 1984-11-14 | 1990-05-08 | Kabushiki Kaisha Toshiba | Perpendicular magnetic recording medium |
-
1982
- 1982-10-29 JP JP57190476A patent/JPS5979508A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4923763A (en) * | 1984-11-14 | 1990-05-08 | Kabushiki Kaisha Toshiba | Perpendicular magnetic recording medium |
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