JPS5975679A - Photoelectromotive force generating device - Google Patents
Photoelectromotive force generating deviceInfo
- Publication number
- JPS5975679A JPS5975679A JP57186164A JP18616482A JPS5975679A JP S5975679 A JPS5975679 A JP S5975679A JP 57186164 A JP57186164 A JP 57186164A JP 18616482 A JP18616482 A JP 18616482A JP S5975679 A JPS5975679 A JP S5975679A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- layer
- amorphous silicon
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 4
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明は非晶質シリコンを用いた光起電力装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] This invention relates to a photovoltaic device using amorphous silicon.
半導体を用いた太陽電池や光検出器のような光起電力装
置は、太陽光綜を直接電気エネルギーに変換することが
できるが、従来の装置の問題点として、他の電気エネル
ギー発生手段と比較して発電コストが非常に大きいこと
があげられる。その主な原因は、主体を構成する半導体
材料の製造コストが１６いことにある。最近、非晶質シ
リコンはこれらの問題点を解決できる半導体材料として
注目されだしている。すなわち、非晶質シリコンはシラ
ンやフロルシランなどシリコン化合物ガスのグロー放電
により製造することができ、製造時の湯度が即結晶材料
製造に比較してきわめて低温であるため安価−目つ大量
に製作することが可能である。Photovoltaic devices such as solar cells and photodetectors using semiconductors can directly convert sunlight into electrical energy, but there are problems with conventional devices compared to other means of generating electrical energy. Therefore, the cost of power generation is extremely high. The main reason for this is that the manufacturing cost of the semiconductor material that constitutes the main body is high. Recently, amorphous silicon has been attracting attention as a semiconductor material that can solve these problems. In other words, amorphous silicon can be produced by glow discharge of a silicon compound gas such as silane or fluorosilane, and the temperature during production is extremely low compared to the production of instant crystalline materials, so it is inexpensive and can be produced in large quantities. It is possible to do so.
第１図は、非晶質シリコンを用いた従来の太陽電池を示
し、（１）は可視光を透過するガラス基板、（２１ｋｌ
、該基板上に形成された透明導電膜からなる第１ ’１
１．極、（３）、（４）及び（５）は、夫々透明導電膜
（２）上に形成４された、非晶質シリコンのＰ型層、非
晶質シリコンのノンドープ（不純物無添加）層及び非晶
質シリコンのＮ型層であり、（６）ｌｄ：該Ｎ型層上に
設けられた、金属例えにアルミニウノ、（ＡＩ）からな
る第２電極である。Figure 1 shows a conventional solar cell using amorphous silicon, in which (1) is a glass substrate that transmits visible light;
, a first '1 consisting of a transparent conductive film formed on the substrate.
1. The poles (3), (4) and (5) are a P-type layer of amorphous silicon and a non-doped (no impurity added) layer of amorphous silicon formed on the transparent conductive film (2), respectively. and an N-type layer of amorphous silicon, and (6) ld: a second electrode made of a metal such as aluminum UNO (AI) provided on the N-type layer.
上記太陽７Ｑ−池において、第２電極（６）として、可
視光における反射率の高い金属１例えばＡＩを用いると
、Ａ１は、非晶質シリコン層（Ｎ型層あるいはＰ型層）
とのオーミック性が悪く、接触抵抗が大きくなるという
欠点がある。また、非晶質シリコン層（Ｎ型層あるいは
Ｐ型層）とのオーミック性の良い金属、例えばモリブデ
ン（ＭＯ）を第２電極（６）に用いると、Ｍｏは可視光
における反射率が低いため、長波長側（６００〜８００
ｎｍ）での収集効率が低くなり、太陽電池の性能の良さ
を示す短絡電流が小さくなるといり欠点がある。In the above-mentioned Taiyo 7Q-ike, when a metal 1 such as AI with high reflectance in visible light is used as the second electrode (6), A1 is an amorphous silicon layer (N-type layer or P-type layer).
It has the disadvantage of poor ohmic properties with the contact resistance and high contact resistance. In addition, if a metal with good ohmic properties with the amorphous silicon layer (N-type layer or P-type layer), such as molybdenum (MO), is used for the second electrode (6), Mo has a low reflectance in visible light. , long wavelength side (600-800
The disadvantages are that the collection efficiency in nanometers (nm) becomes low and the short circuit current, which indicates good solar cell performance, becomes small.
この発明は、上述した従来方法の欠点を改良したも（赴
）で、長波長側での収集効率を高め、非晶質シリコンと
第２電極の接触抵抗を低減することのできる光起電力装
置を提供するととを目的とする。This invention improves the shortcomings of the conventional methods described above, and improves the collection efficiency on the long wavelength side and reduces the contact resistance between the amorphous silicon and the second electrode in a photovoltaic device. The purpose is to provide and.
この発明は、非晶質シリコンとその上に積層する第２電
極である可視光での反射率の高い金属、例えばＡＩとの
間に、非晶質シリコンに対して低抵抗接触をなす透明導
電膜を介在させるととを特徴とする。This invention provides a transparent conductive conductor that forms a low resistance contact with the amorphous silicon between amorphous silicon and a second electrode laminated thereon, which is a metal with high reflectance in visible light, such as AI. It is characterized by having a membrane interposed therein.
非晶質シリコン層（Ｎ型層あるいはＰ型層）と第２電極
である可視光での反射率の＾い金−属との間に、透明昇
畦）換を介在させることにより、長波長側（６００〜８
００ｎｍ）での収集効率が高められ、非晶質シリコンと
第２電極との接触抵抗の低減を図るととができる。By interposing a transparent dielectric layer between the amorphous silicon layer (N-type layer or P-type layer) and the second electrode, which is a metal with high reflectance for visible light, long wavelength side (600~8
00 nm), and the contact resistance between the amorphous silicon and the second electrode can be reduced.
第２図（ａ）は、第１の工程を示し、透光性絶縁基板上
（７）上に第１電極である透明導電膜（８）をスパッタ
法によυ形成させる。該膜は、酸化インジウム錫、酸化
スズ、酸化インジウム等により構成される。FIG. 2(a) shows the first step, in which a transparent conductive film (8), which is a first electrode, is formed on a transparent insulating substrate (7) by sputtering. The film is made of indium tin oxide, tin oxide, indium oxide, or the like.
第２図（ｂ）は、第２の工程を示し、透明導電膜（８）
の上にＰ型層（９）、ノンドープ層ａＯ）及びＮ型層ａ
υからなる非晶質シリコン層（【２を順次形成する。Ｐ
型層（９）は膜厚４０〜１００ＯＸ、ドープ量０．０１
〜１％、ノンドープ層００）は膜厚０．５〜２μｍ、
Ｎ型層０１）は膜厚２００〜１００ＯＡ、ドープ量０．
１〜３係である。FIG. 2(b) shows the second step, in which the transparent conductive film (8)
On top of the P-type layer (9), non-doped layer aO) and N-type layer a
An amorphous silicon layer consisting of υ ([2 is sequentially formed.P
The mold layer (9) has a thickness of 40 to 100OX and a doping amount of 0.01.
~1%, non-doped layer 00) has a film thickness of 0.5-2 μm,
The N-type layer 01) has a film thickness of 200 to 100 OA and a doping amount of 0.
Sections 1 to 3.
第２図（ｃ）は第３の工程を示し、該非晶質シリコン上
に透明導電膜（１３１をスパッタ法忙より形成し。FIG. 2(c) shows the third step, in which a transparent conductive film (131) is formed on the amorphous silicon by sputtering.
その上に金属薄膜（１４）例えばＡＩを蒸着にょ多形成
させる。該透明導電膜（＋３１は、酸化インジウム錫、
酸化スズ、酸化インジウム等によシ構成される。A metal thin film (14) such as AI is formed thereon by vapor deposition. The transparent conductive film (+31 is indium tin oxide,
Composed of tin oxide, indium oxide, etc.
即ち、透明導′１ｄ膜と金属薄膜による２層構造の第２
電極０５）を形成することになる。That is, the second layer has a two-layer structure consisting of a transparent conductive film and a metal thin film.
Electrode 05) will be formed.
この様に形成された装置において、基板（７）、透明導
電膜（８）を介して光が非晶質シリコン層（１２に入る
と、主にノンドープ層θ■において電子及び又は正孔が
発生し、これらは上記各層の作るＰＩＮ接合電界によシ
引かれて、第１電極（８）や第２電極θωに集められ、
両電極間に′４圧が発生する。In the device formed in this way, when light enters the amorphous silicon layer (12) through the substrate (7) and the transparent conductive film (8), electrons and/or holes are generated mainly in the non-doped layer θ. However, these are attracted by the PIN junction electric field created by each of the above layers and collected at the first electrode (8) and the second electrode θω,
'4 pressure is generated between both electrodes.
実施例（１）において、第２電極ｏ段を、透明導電膜０
階として、非晶質シリコンとのオーミック性が良い１１
’０ （酸化インジウム錫）を用い、金属薄膜α荀とし
て可視光における反射率の高いＡＩを用いて２層構造と
した場合と、Ｍ２嵐極１１５１を図１における第２電極
（６）のように１層構造として、ＡＩを用いた場合及び
可視光での反射率は低いが、非晶質シリコンとのオーミ
ック性が良いＭｏを用いた場合の夫々について、Ｍ３に
太陽電池の集成効率を示す。In Example (1), the second electrode stage o is formed of a transparent conductive film 0
As a layer, 11 has good ohmic properties with amorphous silicon.
'0 (indium tin oxide) and a two-layer structure using AI, which has a high reflectance in visible light, as the metal thin film α, and M2 Arashi electrode 1151 as the second electrode (6) in Figure 1. M3 shows the solar cell assembly efficiency when using AI as a single-layer structure and when using Mo, which has low reflectance in visible light but has good ohmic properties with amorphous silicon. .
この図から、第２′市極が八ｆｏ（Ａ）、、Ａｌ（Ｂ）
、 じＪ”０／Ａ１０の順で大きくなることがわかる
。ここでＩＴＯの膜厚は約ｘｏｏｏＸ、、 ＡＩは約２
μである。ＡＩ（Ｆ３１よりも１１’ ０／Ａ Ｉ （
Ｑの方が長波長側での収集効率が良いが、これは、非晶
質シリコンの表面に凹凸があるため、ぞの上ＫＡＡを積
層するとこの凹凸のために反射率が低くなるが、非晶質
シリコン上にＩＴＯを積層することに、しり、凹凸が小
さくなりその上に積層したＡ１σ〕反射率が畠まるため
である。また、オーミック性はＡＩ、へ、↑ｏ 、
Ｉ’、 ｉ）０／Ａ Ｉの順に良くなるため、開放電圧
が前記の順で大きくなった。From this figure, the 2nd city pole is 8 fo (A), , Al (B)
It can be seen that the thickness increases in the order of J"0/A10.Here, the ITO film thickness is about xoooX, and AI is about 2
μ. AI (11' 0/AI (than F31)
Q has better collection efficiency on the long wavelength side, but this is because the surface of amorphous silicon has unevenness. This is because by laminating ITO on crystalline silicon, the edges and irregularities become smaller and the reflectivity of the layer laminated thereon increases. Also, the ohmic property is AI, to, ↑o,
I', i)0/A I improved in the order of I, so the open circuit voltage increased in the above order.
かくして本発明は、透８Ａ導′ＷＢ弥と金属薄膜による
２Ｊ曽構造の第２屯極を用いることにょシ、長波長側で
の収集効率を高め、非晶質シリコンと第２電極の接触抵
抗を低減し、出方の人なる光起電力装［ａを得ることが
できる。なお、不発りｉ ？−Ｊ、」二連した実施例（
ζ限定されるものではなく、その要旨を逸脱しない範囲
で、種々変形して実施することができる。例えば、前記
１’Ｔ’０及びＡ１０膜Ｊ！？は仕様に応じて適宜定め
ればよい。また透明導電膜の形成方法はスパッタ法に限
るものでは々く、ＡＩの形成方法も蒸着法に限るもので
ないことは勿論のことである。Thus, the present invention improves the collection efficiency on the long wavelength side and reduces the contact resistance between the amorphous silicon and the second electrode by using a second electrode with a 2J structure made of a transparent 8A conductor and a metal thin film. can be reduced, and a photovoltaic device [a] can be obtained. In addition, misfire i? -J,” Duplicate Examples (
The present invention is not limited to ζ, and can be implemented with various modifications without departing from the gist thereof. For example, the 1'T'0 and A10 films J! ? may be determined as appropriate according to the specifications. Further, the method for forming the transparent conductive film is not limited to the sputtering method, and the method for forming the AI is, of course, not limited to the vapor deposition method.
第１図は従来例の光起電力装置の断面図、第２図（ａ）
、（ｂ）、（ｃ）は本発明の一実施例の製造工程を説明
するための断面図、第３図は本発明の一実施例によシ得
られた太陽電池の波長に対する収集効率を示す特性図で
ある。
図において
７・・・透光性絶縁基板、 ８・・・透明導電膜、１
２・・・非晶質シリコン層、１３・・・透明導電膜、１
４・・・金属薄膜。
代理人弁理士 則 近 憲 佑
（ほか１名）Figure 1 is a sectional view of a conventional photovoltaic device, Figure 2 (a)
, (b), and (c) are cross-sectional views for explaining the manufacturing process of an embodiment of the present invention, and FIG. FIG. In the figure, 7...Transparent insulating substrate, 8...Transparent conductive film, 1
2... Amorphous silicon layer, 13... Transparent conductive film, 1
4...Metal thin film. Representative Patent Attorney Noriyuki Chika (and 1 other person)
Claims (1)
電膜上に非晶質シリコン層が設けられ、該シリコン層上
に透明導電膜、金属薄膜がこの順に積層された電極が設
けられて成ることを特徴とする光起電力装置。A transparent conductive film is provided on a light-transmitting insulating substrate, an amorphous silicon layer is provided on the transparent conductive film, and an electrode in which a transparent conductive film and a metal thin film are laminated in this order is provided on the silicon layer. A photovoltaic device characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186164A JPS5975679A (en) | 1982-10-25 | 1982-10-25 | Photoelectromotive force generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57186164A JPS5975679A (en) | 1982-10-25 | 1982-10-25 | Photoelectromotive force generating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5975679A true JPS5975679A (en) | 1984-04-28 |
Family
ID=16183503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57186164A Pending JPS5975679A (en) | 1982-10-25 | 1982-10-25 | Photoelectromotive force generating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5975679A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0381647U (en) * | 1989-12-08 | 1991-08-21 | ||
| US7005702B1 (en) * | 2000-05-05 | 2006-02-28 | International Rectifier Corporation | IGBT with amorphous silicon transparent collector |
| EP2194583A1 (en) * | 2008-12-05 | 2010-06-09 | Applied Materials, Inc. | Semiconductor device and method of producing a semiconductor device |
| WO2010063590A1 (en) * | 2008-12-05 | 2010-06-10 | Applied Materials Inc. | Semiconductor device and method of producing a semiconductor device |
-
1982
- 1982-10-25 JP JP57186164A patent/JPS5975679A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0381647U (en) * | 1989-12-08 | 1991-08-21 | ||
| US7005702B1 (en) * | 2000-05-05 | 2006-02-28 | International Rectifier Corporation | IGBT with amorphous silicon transparent collector |
| US7507608B2 (en) | 2000-05-05 | 2009-03-24 | International Rectifier Corporation | IGBT with amorphous silicon transparent collector |
| EP2194583A1 (en) * | 2008-12-05 | 2010-06-09 | Applied Materials, Inc. | Semiconductor device and method of producing a semiconductor device |
| WO2010063590A1 (en) * | 2008-12-05 | 2010-06-10 | Applied Materials Inc. | Semiconductor device and method of producing a semiconductor device |
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