JP3063326B2 - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereofInfo
- Publication number
- JP3063326B2 JP3063326B2 JP3322667A JP32266791A JP3063326B2 JP 3063326 B2 JP3063326 B2 JP 3063326B2 JP 3322667 A JP3322667 A JP 3322667A JP 32266791 A JP32266791 A JP 32266791A JP 3063326 B2 JP3063326 B2 JP 3063326B2
- Authority
- JP
- Japan
- Prior art keywords
- cds
- mns
- layer
- solar cell
- solid solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【産業上の利用分野】本発明はＣdＳーＭnＳ固溶体薄膜
を光透過窓層とする太陽電池とその製造方法に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell having a CdS-MnS solid solution thin film as a light transmitting window layer and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】近い将来、エネルギー供給が次第に困難
になることが予想され、太陽電池の高効率化、低コスト
化が大きな課題になってきた。なかでも、大面積化が容
易な薄膜系太陽電池は大幅な低コスト化が可能なのでそ
のエネルギー変換効率の向上が強く望まれている。この
薄膜系太陽電池には化合物半導体（II-VI族やI-III-VI2
族）薄膜を用いたものが広く開発されつつある。化合物
半導体薄膜を用いた太陽電池の構成は、バンドギャップ
が広くて光を透過する窓層としてのｎ型ＣdＳ系半導体
層とバンドギャップが狭くて光を吸収する吸収層として
のdＴe系あるいはＣuＩnＳe2系などのｐ型のＣ半導体層
を積層したヘテロ接合が用いられる。構成としては、例
えばＩＴＯ（Ｉndium Ｔin Ｏxide）を設けたガラス基
板上にｎ型ＣdＳ層を、次いでｐ型ＣdＴe層を蒸着法で
積層形成し、最後に金属電極を設けて太陽電池とする。2. Description of the Related Art In the near future, it is expected that energy supply will gradually become more difficult, and high efficiency and low cost of solar cells have become major issues. Above all, thin-film solar cells, which can be easily enlarged, can be significantly reduced in cost, and therefore, it is strongly desired to improve the energy conversion efficiency. Compound semiconductors (II-VI and I-III-VI 2
(Group) Thin films using thin films are being widely developed. A solar cell using a compound semiconductor thin film has an n-type CdS-based semiconductor layer as a window layer having a wide band gap and transmitting light, and a dTe or CuInSe 2 as an absorbing layer having a narrow band gap and absorbing light. A heterojunction in which p-type C semiconductor layers of a system or the like are stacked is used. As a structure, for example, an n-type CdS layer and a p-type CdTe layer are formed on a glass substrate provided with ITO (Indium Tin Oxide) by a vapor deposition method, and finally a metal electrode is provided to obtain a solar cell.
【０００３】あるいは、ガラス基板上にスクリーン印刷
と焼成によってｎ型ＣdＳ層を、次いで同様にスクリー
ン印刷と焼成によってｐ型ＣdＴe層を、最後に金属ある
いは炭素電極層を設けて太陽電池とする。ＣdＳの代わ
りにバンドギャップのより広い半導体例えばＣdＳ-Ｚn
Ｓ固溶体薄膜を用いることが、透過光量を増やし変換効
率を上げることに大変有効であることが知られている。
このＣdＳ-ＺnＳ固溶体薄膜の形成法としては、２つの
蒸発源からＣｄＳとＺｎＳを独立に蒸発させ基板上に付
着させて固溶体薄膜を形成する。Alternatively, an n-type CdS layer is formed on a glass substrate by screen printing and baking, then a p-type CdTe layer is similarly formed by screen printing and baking, and finally a metal or carbon electrode layer is provided to form a solar cell. A semiconductor having a wider band gap, such as CdS-Zn, instead of CdS
It is known that using an S solid solution thin film is very effective in increasing the amount of transmitted light and increasing the conversion efficiency.
As a method for forming the CdS-ZnS solid solution thin film, CdS and ZnS are independently evaporated from two evaporation sources and adhered onto a substrate to form a solid solution thin film.
【０００４】[0004]
【発明が解決しようとする課題】この様に、バンドギャ
ップの広い低抵抗の半導体薄膜の窓層を用いることは変
換効率の向上に有効であるが、ＣｄＳ−ＺｎＳ固溶体薄
膜でもＺｎＳの組成比が高くなると高抵抗になり、かえ
って変換効率を低くしてしまうことがある。As described above, it is effective to use a window layer of a low-resistance semiconductor thin film having a wide band gap to improve the conversion efficiency. However, even in a CdS-ZnS solid solution thin film, the composition ratio of ZnS is low. When it becomes high, the resistance becomes high, and the conversion efficiency may be lowered.
【０００５】バンドギャップの広い低抵抗のｎ型半導体
薄膜を用いることが望まれる。It is desired to use a low-resistance n-type semiconductor thin film having a wide band gap.
【０００６】[0006]
【課題を解決するための手段】本発明の太陽電池は、電
極層を設けた基板あるいは電極性を備えた金属基板上
に、ｐ型半導体の光吸収層、ＭnＳの組成比が１０モル
％以上のＣdＳ-ＭnＳ固溶体を主体とするｎ型半導体の
窓層、透明導電層を積層した構成である。A solar cell according to the present invention comprises a p-type semiconductor light absorbing layer and a composition ratio of MnS of 10 mol% or more on a substrate provided with an electrode layer or a metal substrate having electrode properties. And an n-type semiconductor window layer mainly composed of a CdS-MnS solid solution and a transparent conductive layer.
【０００７】その製造方法としては、次の３種類を用い
ることができる。 （１）電極層を設けた基板あるいは電極性を備えた金属
基板上に、ｐ型半導体の光吸収層を形成し、その上にＣ
dＳおよびＭnを同時に蒸着してＣdＳ-ＭnＳ固溶体薄膜
を主体とするｎ型半導体の窓層を形成し、さらにその上
に透明導電層を形成する。The following three kinds of manufacturing methods can be used. (1) A light absorbing layer of a p-type semiconductor is formed on a substrate provided with an electrode layer or a metal substrate having electrode properties, and C
dS and Mn are simultaneously deposited to form an n-type semiconductor window layer mainly composed of a CdS-MnS solid solution thin film, and a transparent conductive layer is further formed thereon.
【０００８】（２）電極層を設けた基板あるいは電極性
を備えた金属基板上に、ｐ型半導体の光吸収層を形成
し、その上にＣdＳおよびＭnＳを同時に蒸着してＣdＳ-
ＭnＳ固溶体薄膜を主体とするｎ型半導体の窓層を形成
し、さらにその上に透明導電層を形成する。(2) A p-type semiconductor light absorbing layer is formed on a substrate provided with an electrode layer or a metal substrate having electrode properties, and CdS and MnS are simultaneously deposited thereon to form a CdS-
An n-type semiconductor window layer mainly composed of a MnS solid solution thin film is formed, and a transparent conductive layer is further formed thereon.
【０００９】（３）電極層を設けた基板あるいは電極性
を備えた金属基板上に、ｐ型半導体の光吸収層を形成
し、その上にＣdＳとＭnＳの固溶体あるいは混合物を用
いて蒸着してＣdＳ-ＭnＳ固溶体薄膜を主体とするｎ型
半導体の窓層を形成し、さらにその上に透明導電層を形
成する。(3) A light absorbing layer of a p-type semiconductor is formed on a substrate provided with an electrode layer or a metal substrate having electrode properties, and a CdS and MnS solid solution or a mixture is deposited thereon. An n-type semiconductor window layer mainly composed of a CdS-MnS solid solution thin film is formed, and a transparent conductive layer is further formed thereon.
【００１０】[0010]
【作用】本発明の太陽電池の構成によればＣdＳ−ＭnＳ
固溶体のバンドギャップがＣdＳに比較して広いので窓
層を透過する光量が増え、そのためｐ型半導体の光吸収
層に吸収される光量が増え、その結果太陽電池の効率が
向上する。また本発明のＣdＳとＭnの２源による同時蒸
着あるいは、ＣdＳとＭnＳの同時蒸着あるいはＣdＳと
ＭnＳの固溶体あるいは混合物を直接蒸着するという製
造方法によれば、バンドギャップの広いＣdＳ−ＭnＳ固
溶体薄膜を安価な蒸着装置で、容易に得ることができ
る。According to the structure of the solar cell of the present invention, CdS-MnS
Since the band gap of the solid solution is wider than that of CdS, the amount of light transmitted through the window layer increases, and therefore the amount of light absorbed by the light absorbing layer of the p-type semiconductor increases, and as a result, the efficiency of the solar cell improves. According to the method of the present invention for simultaneously depositing two sources of CdS and Mn, or simultaneously depositing CdS and MnS, or directly depositing a solid solution or a mixture of CdS and MnS, a CdS-MnS solid solution thin film having a wide band gap can be obtained. It can be easily obtained with an inexpensive vapor deposition device.
【００１１】[0011]
【実施例】以下、本発明の実施例を説明する。Embodiments of the present invention will be described below.
【００１２】Ｐt電極層を設けたガラス基板上に、５μ
ｍ厚のＣdＴeを主体とするｐ型半導体光吸収層を蒸着形
成し、この表面を約１００Åエッチング法で除去してそ
の上にＣdＳとＭnの同時蒸着によりＣdＳとＭnＳのモル
比が５：５で、全体の厚さ１.１μmのＣdＳーＭnＳ固溶
体膜Ｃd0.5Ｍn0.5Ｓを形成する。この膜にＩnを添加す
る。すなわち、Ｃd0.5Ｍn0.5Ｓ膜の上に全体の１％のＩ
nを蒸着し、Ｎ2ガス中４００℃で３０分加熱し、拡散さ
せＩnの有効添加を施す。On a glass substrate provided with a Pt electrode layer, 5 μm
An m-thick p-type semiconductor light absorbing layer mainly composed of CdTe is formed by vapor deposition, and the surface is removed by an etching method of about 100 °. Thus, a CdS-MnS solid solution film Cd 0.5 Mn 0.5 S having a total thickness of 1.1 μm is formed. In is added to this film. That is, 1% of the entire Id is deposited on the Cd 0.5 Mn 0.5 S film.
n is vapor-deposited and heated at 400 ° C. for 30 minutes in N 2 gas to be diffused and effective addition of In is performed.
【００１３】この様にして形成したn型半導体窓層の上
に、透明電極層ＩＴＯを形成する。比較のため、窓層を
通常のＣdＳすなわちＣdＳ蒸着膜に１％のＩnを添加
し、他は上記と同様にした太陽電池の特性についても調
べてある。これら太陽電池のＡＭ１.５（８４mW/cm2）
の照射光に対する特性を表１（本発明１と従来型）にて
示す。またＣdＳとＭnＳのモル比が２：８の固溶体膜Ｃ
d0.2Ｍn0.8Ｓを用いた他は上記同様にした太陽電池も形
成した。この結果も第１表（本発明２）に示してある。
なおＶOC（Ｖ）は解放電圧、ＪSC（mA/cm2）は閉路電
流、η（％）は変換効率、F.F.は曲線因子を表す。On the n-type semiconductor window layer thus formed, a transparent electrode layer ITO is formed. For comparison, the characteristics of a solar cell in which 1% In was added to a normal CdS, that is, a CdS vapor-deposited film as a window layer, and other than that described above were examined. Of these solar cells AM1.5 (84mW / cm 2)
Are shown in Table 1 (present invention 1 and conventional type). The solid solution film C having a molar ratio of CdS to MnS of 2: 8
except for using the d 0.2 Mn 0.8 S is also formed solar cell in the same manner described above. The results are also shown in Table 1 (Invention 2).
Note that V OC (V) represents the release voltage, J SC (mA / cm 2 ) represents the closing current, η (%) represents the conversion efficiency, and FF represents the fill factor.
【００１４】[0014]
【表１】 [Table 1]
【００１５】（表１）に見られる様に本発明の構成で得
られた太陽電池の特性は従来の構成で得られる太陽電池
の特性よりはるかに優れている。これは本発明の太陽電
池のＣdＳ-ＭnＳ固溶体膜は従来の太陽電池のＣｄＳ膜
に比べて分光透過率が大であるからである。As shown in Table 1, the characteristics of the solar cell obtained by the configuration of the present invention are far superior to those of the solar cell obtained by the conventional configuration. This is because the CdS-MnS solid solution film of the solar cell of the present invention has a higher spectral transmittance than the CdS film of the conventional solar cell.
【００１６】この様にＣdＳ、Ｍnの同時蒸着により得ら
れたＣdＳ-ＭnＳ固溶体膜を備えた太陽電池は優れた特
性を有する。Ｉnの添加は光透過率と電気伝導度を高め
る。ＣdＳとＭnＳの他の組成比の固溶体ＣdＳ-ＭnＳを
用いても、またＩnの代わりにＡlやＧａを用いても同様
の効果が得られる。この固溶体薄膜はＣdＳとＭnＳの同
時蒸着でＭnＳを電子ビーム法で蒸着しても、あるいは
ＣdＳ−ＭnＳの固溶体や混合物をスパッタリング法で蒸
着しても得ることができる。A solar cell provided with a CdS-MnS solid solution film obtained by simultaneous vapor deposition of CdS and Mn has excellent characteristics. The addition of In increases light transmittance and electrical conductivity. Similar effects can be obtained by using a solid solution CdS-MnS having another composition ratio of CdS and MnS, or by using Al or Ga instead of In. This solid solution thin film can be obtained by depositing MnS by an electron beam method by simultaneous deposition of CdS and MnS, or by depositing a solid solution or a mixture of CdS-MnS by a sputtering method.
【００１７】[0017]
【発明の効果】本発明の構成と製造方法により変換効率
の非常に高い優れた太陽電池を容易に得ることが可能と
なる。この太陽電池は薄膜形成であるから大幅なコスト
ダウンもはかれる。According to the constitution and the manufacturing method of the present invention, it is possible to easily obtain an excellent solar cell having a very high conversion efficiency. Since this solar cell is formed as a thin film, the cost can be significantly reduced.
【図１】本発明の実施例における太陽電池の構成断面図FIG. 1 is a configuration sectional view of a solar cell according to an embodiment of the present invention.
１ 電極層を設けた基板あるいは電極性を備えた金属基
板 ２ ｐ型半導体光吸収層 ３ ＣdＳ-ＭnＳ固溶体を主体とするｎ型半導体窓層 ４ 透明導電層REFERENCE SIGNS LIST 1 substrate provided with electrode layer or metal substrate provided with electrode properties 2 p-type semiconductor light absorbing layer 3 n-type semiconductor window layer mainly composed of CdS-MnS solid solution 4 transparent conductive layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 平尾 孝 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭63−246963（ＪＰ，Ａ) 特公 昭45−38665（ＪＰ，Ｂ１) Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ａｎ ｄ Ｍａｔｅｒｉａｌｓ，Ｃｈａｐｔｅ ｒ １（ｐｐ．１−33），Ｗ．Ｇｉｒｉ ａｔ ｅｔ ａｌ．，1988，Ａｃａｄｅ ｍｉｃ Ｐｒｅｓｓ Ｉｎｃ. (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 31/04 - 31/078 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Takashi Hirao, inventor 1006 Kazuma Kadoma, Kadoma City, Osaka Inside Matsushita Electric Industrial Co., Ltd. 38665 (JP, B1) Semiconductors and Materials, Chapter 1 (pp. 1-33); Giri at et al. , 1988, Academic Press Inc. (58) Fields investigated (Int. Cl. 7 , DB name) H01L 31/04-31/078
Claims (6)
た金属基板上に、ｐ型半導体の光吸収層、ＭnＳの組成
比が１０モル％以上のＣdＳ-ＭnＳ固溶体を主体とする
ｎ型半導体の窓層、透明導電層を積層したことを特徴と
する太陽電池。1. A light absorbing layer of a p-type semiconductor and an n-type mainly composed of a CdS-MnS solid solution having a composition ratio of MnS of 10 mol% or more on a substrate provided with an electrode layer or a metal substrate having electrode properties. A solar cell comprising a semiconductor window layer and a transparent conductive layer laminated.
とを特徴とする請求項１記載の太陽電池。2. The solar cell according to claim 1, wherein the composition ratio of MnS is 50 mol% or more.
た金属基板上に、ｐ型半導体の光吸収層を形成し、その
上にＣdＳおよびＭnを同時に蒸着してＣdＳ-ＭnＳ固溶
体薄膜を主体とするｎ型半導体の窓層を形成し、さらに
その上に透明導電層を形成することを特徴とする太陽電
池の製造方法。3. A p-type semiconductor light absorbing layer is formed on a substrate provided with an electrode layer or a metal substrate having electrode properties, and CdS and Mn are simultaneously deposited thereon to form a CdS-MnS solid solution thin film. A method for manufacturing a solar cell, comprising: forming a window layer of a main n-type semiconductor, and further forming a transparent conductive layer thereon.
た金属基板上に、ｐ型半導体の光吸収層を形成し、その
上にＣdＳおよびＭnＳを同時に蒸着してＣdＳ-ＭnＳ固
溶体薄膜を主体とするｎ型半導体の窓層を形成し、さら
にその上に透明導電層を形成することを特徴とする太陽
電池の製造方法。4. A light absorbing layer of a p-type semiconductor is formed on a substrate provided with an electrode layer or a metal substrate having electrode properties, and CdS and MnS are simultaneously deposited thereon to form a CdS-MnS solid solution thin film. A method for manufacturing a solar cell, comprising: forming a window layer of a main n-type semiconductor, and further forming a transparent conductive layer thereon.
た金属基板上に、ｐ型半導体の光吸収層を形成し、その
上にＣdＳとＭnＳの固溶体あるいは混合物を蒸着してＣ
dＳ-ＭnＳ固溶体薄膜を主体とするｎ型半導体の窓層を
形成し、さらにその上に透明導電層を形成することを特
徴とする太陽電池の製造方法。5. A light-absorbing layer of a p-type semiconductor is formed on a substrate provided with an electrode layer or a metal substrate having electrode properties, and a solid solution or a mixture of CdS and MnS is vapor-deposited thereon.
A method for manufacturing a solar cell, comprising forming a window layer of an n-type semiconductor mainly composed of a dS-MnS solid solution thin film, and further forming a transparent conductive layer thereon.
あるいはＡlを添加することを特徴とする請求項３〜５
のいずれかに記載の太陽電池の製造方法。6. The method according to claim 6, wherein In, Ga and CdS—MnS solid solution
Alternatively, Al is added.
The method for producing a solar cell according to any one of the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3322667A JP3063326B2 (en) | 1991-12-06 | 1991-12-06 | Solar cell and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3322667A JP3063326B2 (en) | 1991-12-06 | 1991-12-06 | Solar cell and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05160423A JPH05160423A (en) | 1993-06-25 |
| JP3063326B2 true JP3063326B2 (en) | 2000-07-12 |
Family
ID=18146263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3322667A Expired - Fee Related JP3063326B2 (en) | 1991-12-06 | 1991-12-06 | Solar cell and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3063326B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768143A (en) * | 2017-09-16 | 2018-03-06 | 景德镇陶瓷大学 | A kind of passivation layer of quantum dot sensitized solar cell and its preparation method and application |
-
1991
- 1991-12-06 JP JP3322667A patent/JP3063326B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ａｎｄ Ｍａｔｅｒｉａｌｓ，Ｃｈａｐｔｅｒ １（ｐｐ．１−３３），Ｗ．Ｇｉｒｉａｔ ｅｔ ａｌ．，１９８８，Ａｃａｄｅｍｉｃ Ｐｒｅｓｓ Ｉｎｃ． |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768143A (en) * | 2017-09-16 | 2018-03-06 | 景德镇陶瓷大学 | A kind of passivation layer of quantum dot sensitized solar cell and its preparation method and application |
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| JPH05160423A (en) | 1993-06-25 |
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