JPS5961078A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS5961078A JPS5961078A JP57172062A JP17206282A JPS5961078A JP S5961078 A JPS5961078 A JP S5961078A JP 57172062 A JP57172062 A JP 57172062A JP 17206282 A JP17206282 A JP 17206282A JP S5961078 A JPS5961078 A JP S5961078A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layers
- reaction chamber
- reaction
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 45
- 238000010248 power generation Methods 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000012495 reaction gas Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は非晶質半導体を用いた光起電力装置の製造方法
（こ関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for manufacturing a photovoltaic device using an amorphous semiconductor.
（ロ）従来技術
低コスト化を実現する非晶質半導体を用いた光起１−力
装前は従来の単結晶半導体から成るそれに較べ此の種装
置に於いて最も重要な光電変換効率の点で劣っており、
何らかの改善か求められている。この光電変換効率の低
い主たる原因の一つとして、光起電力装置が例えば非晶
質シリコンから成る場合、発電に寄与する分光感度波長
帯域が、４５０ｎｍ乃至７ＱＱｎｍと狭く、特に単結晶
シリコンに比して長波長側の光を有効に利用していない
点が挙げられる。(b) Conventional technology A photovoltaic device using an amorphous semiconductor that realizes cost reduction 1-The most important point in this type of device is photoelectric conversion efficiency, compared to a conventional device made of a single crystal semiconductor. It is inferior in
Some kind of improvement is required. One of the main reasons for this low photoelectric conversion efficiency is that when a photovoltaic device is made of, for example, amorphous silicon, the spectral sensitivity wavelength band that contributes to power generation is narrow, from 450 nm to 7QQ nm, especially compared to single crystal silicon. However, the problem is that the light on the longer wavelength side is not used effectively.
断る点に鑑み第１図に示す如き、非晶質半導体からなる
複数のＰＩＮ接合型発電領域（１）、（２）、（３）を
光入射方向に複数積層すると共１こ、各発電領域（１）
、（２）、（３）の主に発電作用するＩ型（真性）＠σ
す（１２） 、（１３）の光学的禁止帯（＋ｇ ｌｉｏ
ｐ ｔを光入射側より順次小さくした積Ｒ型の光起電
力装置が提案されている。即ち、発ｆｆｔに寄与する分
光感度波長帯域は各発電領域（１）、（２）、（３）の
光学的禁止帯幅Ｅｏｐｔに依存するため１こ、該光学的
禁止帯幅Ｅｏｐｔか光入射側から順次それが小さくなる
配置にあると、入射光エネルギは、その短波長側のもの
か装置の比較的浅い領域で有効に発電に寄与すると共に
、長波長側のものが装置の浅い領域で吸収されることな
く装置の比較的深い領域１こまで進んでそこで有効に発
電に寄与する結果、装置全体として大きな光電変換効率
が得られるう
尚、第１図（こ於いて、（４）はガラス・耐熱プラスチ
・リフ等の司光性且つ絶縁ａｂの基板、（５）は該基板
（４）」二に１１ニ成された酸化スズ等の透明な第１電
極、（６）は積ルラされた第１、第２、第５の発電領域
（１）、（２）、（３）を第１゛１１Ｌｔ！割５）と共
に挟持するアルミニウム等の第２７ｊｉ極である。そ１
．−Ｃ，上記第１、第２、第６の発電領域（１）、（２
）、（３）は夫々光入射側から第１、第２、第３のＰ型
層（Ｐｌ）、（Ｐ２）、（Ｐ５）、ｌ型層（１１）、（
１２）、（Ｉ３）及びＮ型層（Ｎ１）、（Ｎ２）、（Ｎ
３）を持〕でいる。In view of the above points, as shown in FIG. (1)
, (2), (3), type I (intrinsic) @σ, which mainly acts as a power generator
(12), (13) optical forbidden band (+g lio
A product R type photovoltaic device in which p t is made smaller sequentially from the light incidence side has been proposed. That is, since the spectral sensitivity wavelength band contributing to the light emission fft depends on the optical forbidden band width Eopt of each power generation region (1), (2), and (3), the optical band gap Eopt or the light incidence If the incident light energy is arranged so that it decreases sequentially from the side, the energy of the incident light on the short wavelength side will effectively contribute to power generation in a relatively shallow area of the device, and the energy on the long wavelength side will contribute effectively to power generation in the shallow area of the device. As a result of advancing to one relatively deep region of the device without being absorbed and effectively contributing to power generation there, a large photoelectric conversion efficiency can be obtained as a whole of the device. A light-dispersing and insulating AB substrate such as glass, heat-resistant plastic, or the like, (5) a transparent first electrode made of tin oxide or the like formed on the substrate (4), and (6) a laminated aluminum substrate. The 27th electrode is made of aluminum or the like and holds the first, second, and fifth power generation regions (1), (2), and (3) together with the first (11Lt!5). Part 1
．． -C, the first, second, and sixth power generation areas (1), (2
), (3) are the first, second, and third P-type layers (Pl), (P2), (P5), L-type layers (11), (from the light incident side, respectively).
12), (I3) and N-type layers (N1), (N2), (N
3).
周知の如く非晶質半導体は反応ガス雰囲気中でのグロー
放１１こより形成することができ、例えばシ９７ＳｉＨ
ｉ＋ガス雰囲気中でのグロー放？！１こよりＢ２の非晶
質シリコン（ａ−５ｉ）が得られ、斯る雰囲気にヅボラ
ンＢ２Ｈ６を添加することによりＰ型の１ｌｓ１か、ま
たホスフィン１用３を添加することによりＮ型のａ−５
ｉか夫々得られる。この様に非晶質半導体は反応ガス雰
囲気中でのグロー放電により形成さ１ｔ、しかも不純物
ガスを添加するだけで所望の導電型の制御が可能である
。As is well known, an amorphous semiconductor can be formed by glow emission in a reactive gas atmosphere, for example, Si97SiH.
Glow emission in i+ gas atmosphere? ! B2 amorphous silicon (a-5i) is obtained from 1, and by adding duborane B2H6 to such an atmosphere, P-type 1ls1 is obtained, and by adding phosphine 1 and 3, N-type a-5 is obtained.
i can be obtained respectively. In this way, an amorphous semiconductor is formed by glow discharge in a reactive gas atmosphere, and the desired conductivity type can be controlled simply by adding an impurity gas.
従って、上述の如きＰＩＮ接合を有する第１、第２、第
３の発電領域（１）、（２）、（３）を積層せしめた光
起電力装置にあっては、第２図の如く単一の反応室（７
）から成る反応装置に於いて、反応室に導入される反応
ガスを切替える方法により形成されるか、若しくは第３
図の如くＰ型、■型、Ｎ型の各層（Ｐ＋ＸＰ２０Ｐ５）
、（Ｉ ｊ）（１２）（１３）、（Ｎ＋）（Ｎ２）（Ｎ
３）を夫々独立したＰ型反応室（８）、ｌ型反応室（９
）、Ｎ型反応室（＋０１で形成する方法が採られている
っ尚、第２図並びに第３図に於いて、０皿２ はグロー
放電を生起する一対の放電電極、（１３） は反応ガ
ス導入管、（１４１・は排気管、（１５）は各反応室（
８）＋９＋００）の出入口（こ位置し基板（４）の移動
を可能ならしめる開閉自在のシャ・ツタである。Therefore, in a photovoltaic device in which the first, second, and third power generation regions (1), (2), and (3) having the above-mentioned PIN junction are laminated, a simple structure as shown in FIG. 1 reaction chamber (7
), the reaction gas introduced into the reaction chamber may be switched, or the third
As shown in the figure, each layer of P type, ■ type, and N type (P+XP20P5)
, (I j) (12) (13), (N+) (N2) (N
3) into independent P-type reaction chambers (8) and L-type reaction chambers (9).
), an N-type reaction chamber (+01). Gas inlet pipe, (141) is exhaust pipe, (15) is each reaction chamber (
8) +9+00) entrance (located here) is a shutter that can be opened and closed to allow movement of the board (4).
ｉ／））発明が解決しようとする問題点然し乍ら、装置
全体として高い光電変換効率を得るべく上述の如くｌ型
層（Ｉ１）、（Ｉ２）、（Ｉ３）の光学的禁］ヒ帯幅Ｅ
ｏｐｔを異ならしめるために、例えば第１１型１？Ｑ（
１１）を非晶質シリコンナイトライド（ａ−５ｉｘＮｌ
−ｘ）で構成し、第２１型層（Ｉ２）をａ−５ｉで構成
すると共に、第３１型層を非晶質シリコンスズ（ａ−５
ｉγ−５ｔ％１−Ｙ）で構成すると、各ｌ型層（１１）
、（１２）、（Ｉ３）を形成する際の反応ガスが異４「
ろことになり、第２図並びに第４図に示した様な反応装
置を用いて反応形成したのでは、各ｌ型層（Ｉ１）、（
１２）、（１３）を形成すべき反応の直前に行なわれた
反応（こ於いて使用された反応ガスが僅かながらも残留
し、所望の光学的禁出帯幅Ｅｏｐｔが得られないのみな
らず、局在準位密度の増加１ζよる膜質の低下をもたら
し、ひいては装置特性の劣化を招く原因となっていた。i/)) Problems to be Solved by the Invention However, in order to obtain a high photoelectric conversion efficiency as a whole of the device, the optical band width E of the l-type layers (I1), (I2), and (I3) is adjusted as described above.
In order to make the opt different, for example, the 11th type 1? Q(
11) to amorphous silicon nitride (a-5ixNl
-x), the 21st type layer (I2) is made of a-5i, and the 31st type layer is amorphous silicon tin (a-5i).
iγ-5t%1-Y), each l-type layer (11)
, (12), (I3) when the reaction gas is different 4''
Therefore, if the reaction formation was performed using the reaction apparatus shown in FIGS. 2 and 4, each l-type layer (I1), (
12), the reaction carried out immediately before the reaction to form (13) (in which a small amount of the reaction gas used remains, and not only the desired optical forbidden band width Eopt cannot be obtained) , the film quality deteriorates due to the increase in localized level density 1ζ, which in turn causes deterioration of device characteristics.
に））問題点を解決するための手段
本発明は斯る点に擢みて為されたものであって光学的禁
ｌ−帯幅Ｅｏｐｔの異なるｌ型層を主体とする複数の非
晶質半導体発電領域を光入射方向に積層した光起電力装
置の複数のｌ型層を夫々独立した反応室で形成すると共
に、同一導電型層については共通の反応室で形成するこ
とにより、上記間、ｉ点を解決したものである。B)) Means for Solving the Problems The present invention has been made in view of the above points, and is based on a plurality of amorphous semiconductors mainly composed of l-type layers having different optical band widths Eopt. By forming a plurality of l-type layers of a photovoltaic device in which power generation regions are laminated in the direction of light incidence in separate reaction chambers, and forming layers of the same conductivity type in a common reaction chamber, This solves the problem.
（ホ）実施例
第４図は第１図１こ示した如き光学的禁［１一帯幅Ｅｏ
ｐｊの異なるｌ型層（Ｉ１）、（Ｉ２）、（１３）を主
体とするＰＩＮ接合型の第１、第２、第３の発電領域（
１）、（２）、（３）を形成するに好適な反応装置“・
！を示１．ている。同図に於いて従来の第２図、第３図
と同］７もの１こついては同番号が伺（７てあり、（１
１）Ｉ１２）・は一対の放電電極、（１３）・・は反応
ガス導入管、（１４）は排気管、（囚・はシ←・ツタで
、異なるとこうは反応室の各担当である。即ち、開閉自
在のシャ、・ツタ（１５）を挾んで連続的に５室縦列配
置された第１〜第５の反応室（１Ｇ）〜（囚）の内、５
室は光学的禁１ト、帯幅Ｆｏｐ【の異なる３個の第１、
第２、第６Ｉ型層（Ｉ１）、（Ｉ２）、（Ｉ３）の夫々
を独立して担当すると共（こ、残り２室の各々は第１．
９＠２、第３Ｐ型層並びにＮ型層（” １ ）（、Ｐ２
） （Ｐ３ ）、（Ｎ１）（Ｎ２ ） （Ｎ３ ）の
各同−褌電型を共通（こ担当する。具体的には第１反応
室（１６）か第１１型層（１１）を、第２反応室（１コ
がＰ型層（Ｐｌ）（Ｐ２ＸＰ３）を、第３反応室（１８
）か第２１型層（１２）を、第４反応室（ｉ印がＮ型層
（Ｎ＋ ） （Ｎ２ ） （Ｎ３ ）をそして第５反応
室がか第３１型層（工３）を夫々担当する。(E) Embodiment FIG. 4 shows the optical prohibition [1 band width Eo] as shown in FIG.
PIN junction type first, second and third power generation regions (I1), (I2) and (13) having different pj are
Reactor suitable for forming 1), (2), and (3)
! Shows 1. ing. In the same figure, the same number as the conventional figure 2 and figure 3] 7 is the same number.
1) I12) is a pair of discharge electrodes, (13)... is a reaction gas inlet pipe, (14) is an exhaust pipe, (I12) is an exhaust pipe, and these are in charge of each reaction chamber. That is, 5 of the 1st to 5th reaction chambers (1G) to 5 chambers (1G) to 5 chambers (5 chambers) are arranged in tandem with the ivy (15) in between, which can be opened and closed freely.
The chamber is optically restricted, and has three different widths Fop.
The second and sixth I-type layers (I1), (I2), and (I3) are independently responsible for each of the layers (I1), (I2), and (I3) (each of the remaining two chambers is for the first and sixth I-type layers (I1), (I2), and I3).
9@2, third P-type layer and N-type layer (" 1 ) (, P2
) (P3), (N1), (N2), and (N3). 2 reaction chambers (1 contains P type layer (Pl) (P2XP3), 3rd reaction chamber (18
) is in charge of the 21st type layer (12), the 4th reaction chamber (i mark is in charge of the N type layer (N+) (N2) (N3), and the 5th reaction chamber is in charge of the 31st type layer (technique 3), respectively. do.
次に第１、第２、第６の発電領域（１）、（２）、（３
）が下表の如き具体的構成にある時の製造方法につき説
明する。Next, the first, second, and sixth power generation areas (1), (2), (3
) has a specific configuration as shown in the table below.
所望形状にバターニングされた第１電極（５）まで作成
済みの基板（４）をトレイにセ・リドし、第２反応室（
１７１の放電電極（１１）０７Ｊ間に配置し、斯る反応
室（１７１に所定の反応ガスを満してグロー放電を生起
せしめ第１Ｐ型層（Ｐｌ）を形成し、形成後第１反応室
口６）に逆移動せしめ第１１型層（１１）を形成し、次
いで第４反応室０９）でｊｌｉＮ型層（Ｎ１）を重畳し
゛Ｃ第１発電領域（１）を形成する。同様（こし℃、第
２、第３の発電領域（２）、（３）の第２、第３Ｐ型（
１’２）、（Ｐりが第４反応室０９で、第２１型層（１
２）か第３反応室玉で、第６１型層（１３）か第５反応
室（４））で、第２、ｆ６３ Ｎ 型１１ （Ｎ２人（
Ｎ３）が第４反応室（１９１で夫々形成される。第５図
は上記各層の形成順序を模式的に示したものである。そ
して、下表に、各層齋こ対−りる反応ガスの組成を示す
。The prepared substrate (4) up to the first electrode (5), which has been patterned into a desired shape, is placed on a tray and placed in the second reaction chamber (
The reaction chamber (171 is filled with a predetermined reaction gas to generate a glow discharge to form a first P-type layer (Pl), and after the formation, the first P-type layer (Pl) is placed between the discharge electrodes (11) 07J of 171, An 11th type layer (11) is formed by reverse movement in the opening 6), and then a JliN type layer (N1) is superimposed on the fourth reaction chamber 09) to form a ``C first power generation region (1)''. Similarly (Koshi ℃, second and third P type of second and third power generation areas (2) and (3) (
1'2), (P layer is in the fourth reaction chamber 09, and the 21st type layer (1
2) or 3rd reaction chamber ball, 61st type layer (13) or 5th reaction chamber (4)), 2nd, f63 N type 11 (N2 people (
N3) are formed in the fourth reaction chamber (191). Fig. 5 schematically shows the formation order of each layer. The table below shows the reaction gas for each layer. Indicates the composition.
向、基板（４）は全ての層形成時、２５０℃の温度に保
たれると共に、その他キャリアガスとしての水素ガスか
含まれている。On the other hand, the substrate (4) is maintained at a temperature of 250° C. during the formation of all layers, and also contains hydrogen gas as a carrier gas.
一方、上述の如く光学的禁止帯幅の異なるＩ型層（ｚｉ
入（工２）、（１３）は導電型決定不純物を含まない雰
囲気中で形成された所謂ノンドープ層であるものの、僅
かながらＮ型の性質を呈することが知られており、斯る
Ｎ型を補償するためにＰ型の不純物か微量にドープされ
ることがある。従って、本発明に於いて称せられる「Ｉ
型（真性）」とは真の１型に限らず、ノンドープの僅か
なＮ型、Ｎ型不純物を微量に含んだＮ型、及びＰ型不純
物か微量にドープされた僅かなＰ型をも含んでいる。On the other hand, as mentioned above, the I-type layer (zi
Although the layers (step 2) and (13) are so-called non-doped layers formed in an atmosphere that does not contain impurities that determine the conductivity type, they are known to exhibit slightly N-type properties, and are known to exhibit N-type properties. A small amount of P-type impurity may be doped for compensation. Therefore, the "I" referred to in the present invention
Type (intrinsic) is not limited to true type 1, but also includes a small amount of non-doped N type, N type containing a small amount of N type impurity, and a small amount of P type doped with a P type impurity. I'm here.
また、積層構造も３層に限定されるものでなく、タンデ
ム型、４層構造以上の積層型であっても良い。Furthermore, the laminated structure is not limited to three layers, and may be a tandem type or a laminated type with four or more layers.
（へ）効果
本発明は以上の説明から明らかな如く、光学的禁止帯幅
の異なる複数のＩ型層を夫々独立した個別の反応室で形
成すると共に、同一導電型層は共通の反応室で形成する
ので、反応室を必要最小限に抑えた状態で主として発電
作用に寄与するＩ型層の光学的禁止帯幅を予め定められ
た値に正確に制御することが可能となり、その結果良好
な模質を得ることかでき、光電変換効率の高い光起電力
装置を提供することができる。(F) Effect As is clear from the above description, the present invention forms a plurality of I-type layers having different optical band gaps in separate reaction chambers, and layers of the same conductivity type in a common reaction chamber. As a result, it is possible to accurately control the optical band gap of the I-type layer, which mainly contributes to power generation, to a predetermined value while minimizing the size of the reaction chamber. A photovoltaic device with high photovoltaic conversion efficiency can be provided.
第１図は本発明製造方法によって製造されて好適な光起
電力装置を示す側面図、第２図並びに第５図は従来の反
応装置を示す概念図、第４図は本発明製造方法に用いら
れる反応装置を示す概念図第５図は本発明製造方法の順
序を示す模式図で、（１）、（２）、（３）は第１、第
２、第３発電領域、０６）〜（２）１）は第１〜第５反
応室、（１１）、（１２）、（１３）は第１、第２、第
３■型層を夫々示している、
出願人 三洋電機株式会社
代理人 弁理士 佐野 静 夫ｆ′′′パ、ｈｌ、ｌ
第１図
い
第；２図
第８図
手 続 補 正 書（自発）
昭和５７年１０月７日
特許庁長官殿
光起電力装置の製造方法
ろ、補正をする者
特許出願人
住所 守口市京阪本通２丁目１８番地
名称（１８８）三洋電機株式会社
代表者 井 植 薫
４、代理人
住所 守口型京阪本通２工目１８番地
明細口
６、 補正の内容
明細書全文を別紙の通り補正します。
（明細書の浄書につき内容に変更なし）３８７FIG. 1 is a side view showing a preferred photovoltaic device manufactured by the manufacturing method of the present invention, FIGS. 2 and 5 are conceptual diagrams showing a conventional reaction device, and FIG. Fig. 5 is a schematic diagram showing the order of the production method of the present invention, where (1), (2), and (3) are the first, second, and third power generation areas; 2) 1) indicates the first to fifth reaction chambers, and (11), (12), and (13) indicate the first, second, and third type layers, respectively. Applicant: Sanyo Electric Co., Ltd. Agent Patent Attorney Shizuo Sano f'''Pa, hl, l Figure 1, Figure 2, Figure 8 Procedures Amendment (spontaneous) October 7, 1980 To the Commissioner of the Japan Patent Office Manufacture of photovoltaic devices Method, person making amendment Patent applicant Address: 2-18 Keihan Hondori, Moriguchi City Name (188) Sanyo Electric Co., Ltd. Representative: Kaoru Iue 4, Agent address: Moriguchi-shi Keihan Hondori 2-18, Details 6. Contents of amendment The entire statement will be amended as shown in the attached sheet. (There is no change in the contents due to engraving of the specification) 387
Claims (1)
体とする複数の非晶質半導体発電領域を光入射方向に積
層した光起電力装置の製造方法であって上記複数のＩ型
層は夫々独立した反応室で形成されると共に、同一導電
型層は共通の反応室で形成されることを特徴とした光起
電力装置の製造方法。(1) A method for manufacturing a photovoltaic device in which a plurality of amorphous semiconductor power generation regions mainly composed of I-type (intrinsic) layers having different optical band gaps are laminated in the light incident direction, wherein the plurality of I-type 1. A method for manufacturing a photovoltaic device, characterized in that the layers are formed in independent reaction chambers, and layers of the same conductivity type are formed in a common reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172062A JPS5961078A (en) | 1982-09-29 | 1982-09-29 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172062A JPS5961078A (en) | 1982-09-29 | 1982-09-29 | Manufacture of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5961078A true JPS5961078A (en) | 1984-04-07 |
Family
ID=15934824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57172062A Pending JPS5961078A (en) | 1982-09-29 | 1982-09-29 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961078A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114387A (en) * | 1980-02-13 | 1981-09-08 | Sanyo Electric Co Ltd | Manufacture of photovoltaic force element |
| JPS5779674A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Multiplex battery cell with amorphous photoresponsiveness |
-
1982
- 1982-09-29 JP JP57172062A patent/JPS5961078A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114387A (en) * | 1980-02-13 | 1981-09-08 | Sanyo Electric Co Ltd | Manufacture of photovoltaic force element |
| JPS5779674A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Multiplex battery cell with amorphous photoresponsiveness |
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