JPS58116779A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS58116779A JPS58116779A JP56212940A JP21294081A JPS58116779A JP S58116779 A JPS58116779 A JP S58116779A JP 56212940 A JP56212940 A JP 56212940A JP 21294081 A JP21294081 A JP 21294081A JP S58116779 A JPS58116779 A JP S58116779A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- power generation
- layer
- layers
- forbidden band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000010248 power generation Methods 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
本発明は非晶質半導体を用いた光起電力装置に関し、特
にその電力変換効率の向上を図ったものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photovoltaic device using an amorphous semiconductor, and is particularly aimed at improving the power conversion efficiency thereof.
第１図は本発明実施例としての薯起電力装置を示し、ｕ
ｌＶｉガラス等の透明な絶＃基板、Ｏυｉｌｔ該基板上
に形成されたインジウム・錫酸化物等からなる透明な第
１電極、１１邊、＋１３）及び（１４）＃′ｉ該電極電
極順次積層された、何れも非晶質半導体からなる第１、
第２及び第６の発′罐層、Ｏ５は第６の発電層（＋４）
上に形成されたアルミニウム等からなる第２電極であろ
う
上記装置において、基板ｕＩ及び第１電極（１１）を介
して光が各発電層に入ると、各層内で自由キャリア（′
ｔｉ１子及び又は正札）が生じ、これらが第１、第２電
極０υ、Ｏ９に集電されることにより起電圧を生じるっ
本発明の特徴として、光入射方向に積層された第１、第
２、第６の発電−０本Ｑ３、Ｉの各光学的禁止帯幅Ｅｏ
ｐけ、第２図に示す如く光入射側より順次小さくなって
いるうより具体的に説明すると、第１〜第５発電局の具
体的構成は下表の通りであるっ
即ち、各発電層において主に発電作用の行なわれるのは
大々のｌ型層であるが上記の如く、光入射側より順次積
層されている第１ＩｔＭ層（１１）、第２Ｉ型層（Ｉ２
）及び第５■型層（１５）の夫々の光学的禁止帯幅Ｅｏ
ｐは２．Ｏｅｖ、１．７５ｅｖ、ｔ３ｅＶと順に小さく
なっているのである。FIG. 1 shows an electromotive force device as an embodiment of the present invention.
A transparent insulation substrate such as lVi glass, a transparent first electrode made of indium/tin oxide, etc. formed on the Oυilt substrate, and the electrodes 11, +13) and (14) #'i are laminated in sequence. The first, both of which are made of an amorphous semiconductor,
2nd and 6th power generating layer, O5 is the 6th power generating layer (+4)
In the above device, which may be a second electrode made of aluminum or the like formed above, when light enters each power generation layer through the substrate uI and the first electrode (11), free carriers ('
The present invention is characterized by the fact that the first and second electrodes laminated in the direction of light incidence are , 6th power generation-0 line Q3, each optical forbidden band width Eo of I
As shown in Figure 2, the size of each power generation station decreases in order from the light incidence side. It is the L-type layer that mainly generates electricity, but as mentioned above, the first ItM layer (11) and the second I-type layer (I2) are laminated sequentially from the light incident side.
) and the optical bandgap Eo of the fifth type layer (15)
p is 2. The values decrease in this order: Oev, 1.75ev, and t3eV.
半導体発電現象に２いて、発電に寄与する入射光波長、
即ち吸収波長は発電領域の光学的禁止帯幅に依存するっ
第３図は本実施例における第１、第２、第３発電層Ｑ３
．０．０４の夫々の光吸収特性（１２ｍ）、（１５ｍ）
、（１４ｍ）を示している。In the semiconductor power generation phenomenon, the incident light wavelength that contributes to power generation,
That is, the absorption wavelength depends on the optical forbidden band width of the power generation region. Figure 3 shows the first, second, and third power generation layers Q3 in this example.
．． Respective light absorption characteristics of 0.04 (12m), (15m)
, (14m).
発電素子がもし−りの光学的禁止帯幅しか持っておらず
、祈る素子に太陽光などが入射したとすると、その光学
的禁止帯幅に応じた一部の波長の光しか発電に寄与せず
、それより短い波長の入射光エネルギは素子内で熱とな
って酒飲し、又長い波長の入射光エネルギは素子内で吸
収されることなく牧逸するっ
これに対し、本実施例では９！Ｊ５図か−ら明らかな如
く、素子全体として見れば複数の光学的禁止帯幅が存在
し、しかも光入射側から順次それが小さくなる配置であ
るので、入射光エネルギは、その短波長側のものが素子
の比較的浅い領域で有効に発電に寄与する七共に、長波
長側のものが素子の浅い領域で吸収されることなく素子
の比較的深い領域にまで進んでそこで有効に発電に寄与
する結果、素子全体として大きな発電効率が得られる。If a power generation element has only a certain optical bandgap, and sunlight or other light is incident on the praying element, only a portion of the wavelength of light corresponding to the optical bandgap will contribute to power generation. First, incident light energy with a shorter wavelength becomes heat within the element and is absorbed, and incident light energy with a longer wavelength is not absorbed within the element and is lost.In contrast, in this embodiment, 9! As is clear from Figure J5, when looking at the element as a whole, there are multiple optical forbidden band widths, and since the arrangement is such that they become smaller sequentially from the light incident side, the incident light energy is At the same time, the long-wavelength components are not absorbed in the shallow region of the device and travel to the relatively deep region of the device, where they effectively contribute to power generation. As a result, high power generation efficiency can be obtained for the entire device.
単結晶材料を用いて、本実施例の如き異なる光学的禁止
帯幅の発電層を複数積層しようとすれば、各発電層間の
結晶格子の不整合問題と、更に、隣接する発電層の闇に
、第１図に見られる、第１Ｎｆｆｉ！−（Ｎ１）と第２
Ｐを層（Ｐ２）の間、第２Ｎ型層（Ｎ２）と第３Ｐ型層
（Ｐ５）との闇の如き逆方向の！１１接合が発生するこ
とから、その実現は内錐である。If a single crystal material is used to stack a plurality of power generation layers with different optical band gaps as in this example, there will be problems of crystal lattice mismatch between each power generation layer, and furthermore, there will be problems with the darkness of adjacent power generation layers. , the first Nffi! can be seen in Figure 1. -(N1) and the second
Between the P layer (P2), the dark opposite direction between the second N-type layer (N2) and the third P-type layer (P5)! Since 11 junctions occur, the realization is an internal cone.
しかし乍ら、本実施例の様に非晶質半導体材料を用いる
場合、上記の如き結晶格子の不整合は全く生じず、かつ
、非晶質半導体は極めて博い膜厚に形成できるので、上
記の如き逆方向格流接合の発生し得る部分の膜厚を実施
例の様に非常に薄くしてＰくことにより、トンネル電流
が流れてその部分の接合はほとんど実質的な整流接合と
ならないのである。However, when an amorphous semiconductor material is used as in this example, the above-mentioned crystal lattice mismatch does not occur at all, and the amorphous semiconductor can be formed to an extremely wide thickness. By making the film thickness of the part where a reverse current junction like this can occur very thin as in the example, a tunnel current flows and the junction in that part hardly becomes a real rectifying junction. be.
上記実施例の製造は、例えば第１電極（１１）まで作成
済みの基板Ｑｌを反応室に入れ、断る反応室に適宜反応
ガスを満してグロー放電を生起せしめることによね行な
われる。各発電層１１３、Ｉ３． （１４の組成は夫々
異なるので、積ｌ１ｍ順に反応ガスが切替えられること
はもちろんであるっ下表に、各層に対する反応ガスの組
成を示す。尚基板ｕＩは全ての層形成時、２５０℃の温
度に保たれる。The manufacturing of the above embodiment is carried out, for example, by placing the substrate Ql, which has been fabricated up to the first electrode (11), into a reaction chamber, and filling the reaction chamber with an appropriate reaction gas to generate glow discharge. Each power generation layer 113, I3. (Since the compositions of 14 are different from each other, it goes without saying that the reaction gas is switched in the order of 1m in volume.) The table below shows the composition of the reaction gas for each layer.The temperature of the substrate uI was 250°C during the formation of all layers. is maintained.
尚、反応ガスにはその他キャリアガスとしてのＨ２ガス
が含まれている。Note that the reaction gas also contains H2 gas as a carrier gas.
又、量産的な方法として、上記各層形成用の個別の反応
室を各層の形成順に近接配列すると共に、これら各反応
室の闇をシャッタにより分離する構成となし、基板ＯＩ
をこれら各室を順次通過させることにより全ての層を流
れ作業的に形成することができる。In addition, as a mass production method, the individual reaction chambers for forming each layer are arranged close to each other in the order of formation of each layer, and the darkness of each reaction chamber is separated by a shutter, and the substrate OI is
All the layers can be formed in a production line by passing through each of these chambers in sequence.
他の実施例として、上記第１、第２、第６１型層（Ｉ１
）、（Ｉ２）、（Ｉ５）の夫々の光学的禁止帯幅Ｅｏｐ
を入射光方向く徐々に小さくすることによりこれら各
層内て内部電界を追加的に形成しても良い。断る内部電
界は各■型層内で光照射により発生する自由キャリアの
移動を促進して再結合誦賦を抑制し、効率を更に高める
。As another embodiment, the first, second, and 61st type layers (I1
), (I2), and (I5), each optical band gap Eop
An internal electric field may be additionally formed in each of these layers by gradually decreasing the value of the field in the direction of the incident light. The internal electric field promotes the movement of free carriers generated by light irradiation within each type layer, suppresses recombination, and further increases efficiency.
コノ様な第１１型Ｐ４（Ｉ＋）Ｏ形Ｆｓ、ｔ−ｊ：、
上Ｅ第１の実施例における反応ガス組Ｕ ＮＨｓ／Ｓ
ｉ Ｈａ 十ＮＨｓを当初の１０％から始め、襖の成長
に従い最終５％まで徐々に変化させればよく、この場合
Ｅｏ阻２、ＯｅＶからｔ ８ ｅＶまで変化する。第２
１型層（■２）の形成は、上記第１の実施例における基
板温度を当初の１８０℃から始め、膜の成長に従い最終
５００℃にまで徐々に変化させればよく、この場合Ｅｏ
ｐＨｉ、 ８ ｅＶから１．７ ｅＶまで変化する。Kono-like 11th type P4(I+)O type Fs, t-j:,
Upper E Reaction gas set U NHs/S in the first embodiment
i Ha NHs may be started from the initial 10% and gradually changed to a final 5% as the fusuma grows, in which case it changes from Eo 2, OeV to t 8 eV. Second
The type 1 layer (■2) can be formed by starting the substrate temperature from the initial 180°C in the first embodiment and gradually changing it to a final temperature of 500°C as the film grows.
pHi, varies from 8 eV to 1.7 eV.
第３１ｆｕ層（Ｉｓ）の形成は、上記第１の実施例にお
ける反応ガス組Ｕ ５ｎＣ１４／Ｓ ｉＨｓ ＋ＳｎＣ
１ｍ を当初の１％から始め、膜の成長に従い最終２
０％まで徐々に変化させればよく、この場合Ｅｏｐはｔ
６ｅＶからｔ １ ｅＶまで変化する。尚第５１ｆＭ層
（Ｉｓ）の祈る変更に伴い、第５Ｎ型層（Ｎ５）の形成
のための反応ガス組成は、５ｎＣ１ａ／５ｉＨａ ＋５
ｎＣ１ａ＝２０％、ＰＨｓ／ＳｉＨ４＋ ５ｎＣＬａ＝
１％に変更され、このときＥｏｐはｔ １ ｅＶ と
なる。The 31st fu layer (Is) was formed using the reaction gas set U 5nC14/S iHs +SnC in the first embodiment.
1m, starting from 1% of the initial value and increasing to the final 2% as the film grows.
It is sufficient to gradually change it to 0%, and in this case Eop is t
It varies from 6 eV to t 1 eV. Due to the change in the 51st fM layer (Is), the reaction gas composition for forming the 5th N-type layer (N5) is 5nC1a/5iHa +5
nC1a=20%, PHs/SiH4+ 5nCLa=
1%, and at this time Eop becomes t 1 eV.
更に他の実施例として、第１、第２、第６発電層ｃｉａ
、ａ飄α荀の各隣接間に存在する逆方向整流接合を完全
になくす丸めに、上記第１の実施例における第１、第２
Ｎ型ｍ（Ｎ＋）、（Ｎ２） ｏＦｓ、長終了付近の領域
（各層の２０％〜５０％の厚み＠域）をＶ型に、又部２
、ｆＨ５Ｐ型層（Ｐ２人（Ｐｓ）の成長開始付近の領域
（各層の２０−５０％の厚み領域）をＰ＋型になしても
よい。Furthermore, as another example, the first, second, and sixth power generation layers cia
, the first and second in the first embodiment are rounded to completely eliminate the backward rectifying junctions existing between adjacent ones of the
N-type m(N+), (N2) oFs, the region near the long end (20% to 50% thickness @ region of each layer) is V-shaped, and part 2
, the region near the start of growth of the fH5P type layer (P2 (Ps) (20-50% thickness region of each layer) may be made into P+ type.
以上の説明から明らかな如く、本発明によれば、非晶質
半導体を用いた光起電力装置において、非晶質半導体に
特有な性質を利用して発電層を積層構造となすことによ
り高効率の光起電力装置を実現することができる。As is clear from the above description, according to the present invention, in a photovoltaic device using an amorphous semiconductor, high efficiency is achieved by forming a power generation layer into a laminated structure by utilizing properties specific to the amorphous semiconductor. A photovoltaic device can be realized.
第１図は本発明実施例を示す側面図、第２図はエネルギ
帯構造図、第５図は光吸収特性図であるっＵり、０．０
４・・・発電層。Fig. 1 is a side view showing an embodiment of the present invention, Fig. 2 is an energy band structure diagram, and Fig. 5 is a light absorption characteristic diagram.
4...Power generation layer.
Claims (1)
に複数積層すると共に、各発電層の光学的禁止帯幅を光
入射側より順次小さくしたことを特徴とする光起電力装
置。(1) A photovoltaic device characterized in that a plurality of power generation layers made of amorphous semiconductor are laminated in the light incidence direction, and the optical band gap of each power generation layer is made smaller sequentially from the light incidence side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56212940A JPS58116779A (en) | 1981-12-29 | 1981-12-29 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56212940A JPS58116779A (en) | 1981-12-29 | 1981-12-29 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58116779A true JPS58116779A (en) | 1983-07-12 |
Family
ID=16630807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56212940A Pending JPS58116779A (en) | 1981-12-29 | 1981-12-29 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58116779A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60240168A (en) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converter |
| JPS60240169A (en) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converter |
| JPS60240167A (en) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| JPS616874A (en) * | 1984-06-20 | 1986-01-13 | Sanyo Electric Co Ltd | Photovoltaic element |
| JPS61104678A (en) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | Amorphous solar cell |
| US5039354A (en) * | 1988-11-04 | 1991-08-13 | Canon Kabushiki Kaisha | Stacked photovoltaic device with antireflection layer |
-
1981
- 1981-12-29 JP JP56212940A patent/JPS58116779A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60240168A (en) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converter |
| JPS60240169A (en) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converter |
| JPS60240167A (en) * | 1984-05-15 | 1985-11-29 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| JPH0525187B2 (en) * | 1984-05-15 | 1993-04-12 | Handotai Energy Kenkyusho | |
| JPH0525186B2 (en) * | 1984-05-15 | 1993-04-12 | Handotai Energy Kenkyusho | |
| JPS616874A (en) * | 1984-06-20 | 1986-01-13 | Sanyo Electric Co Ltd | Photovoltaic element |
| JPS61104678A (en) * | 1984-10-29 | 1986-05-22 | Mitsubishi Electric Corp | Amorphous solar cell |
| US5039354A (en) * | 1988-11-04 | 1991-08-13 | Canon Kabushiki Kaisha | Stacked photovoltaic device with antireflection layer |
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