JPS595721A - Electrode structure of thin film of zinc oxide - Google Patents
Electrode structure of thin film of zinc oxideInfo
- Publication number
- JPS595721A JPS595721A JP11444682A JP11444682A JPS595721A JP S595721 A JPS595721 A JP S595721A JP 11444682 A JP11444682 A JP 11444682A JP 11444682 A JP11444682 A JP 11444682A JP S595721 A JPS595721 A JP S595721A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- oxide film
- electrode structure
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 47
- 239000010409 thin film Substances 0.000 title description 32
- 238000000034 method Methods 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 229910000942 Elinvar Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 230000002123 temporal effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 102220085887 rs864622014 Human genes 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は安定な特性を示ず酸化亜鉛Ｍ膜の電極構造に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode structure of a zinc oxide M film that does not exhibit stable characteristics.
酸化亜鉛薄膜は弾性表面波装置、音叉振動子、音片振動
子などの圧電体として使用されている。Zinc oxide thin films are used as piezoelectric materials in surface acoustic wave devices, tuning fork vibrators, vibrator elements, etc.
この酸化亜鉛ｗＪｌｐＪの使用例を音叉振動子にもとづ
いて説明する。An example of the use of this zinc oxide wJlpJ will be explained based on a tuning fork vibrator.
第１図は音叉振動子の一例を示す側面図である。FIG. 1 is a side view showing an example of a tuning fork vibrator.
図において、１は音叉振動子の本体、２．３はこの本体
１の脚部を示し、脚部２．３の側壁２ａ、３ａには酸化
亜鉛薄膜４．５が形成されている。In the figure, 1 indicates the main body of a tuning fork vibrator, 2.3 indicates a leg portion of this main body 1, and a zinc oxide thin film 4.5 is formed on the side walls 2a, 3a of the leg portion 2.3.
この酸化亜鉛薄膜４．５は真空蒸着法、スパッタリング
法、イオンブレーティング法などにより形成される。６
．７は酸化亜鉛薄膜４．５の上に形成されたへρ電極を
示ず。This zinc oxide thin film 4.5 is formed by vacuum evaporation, sputtering, ion blasting, or the like. 6
．． 7 does not show the ρ electrode formed on the zinc oxide thin film 4.5.
このへρ電極６．７は安価でボンディングができること
から選ばれたもので、電子ビーム蒸着法などにより３０
００〜１００ＯＯＡの膜厚の範囲で形成される。This ρ electrode 6.7 was selected because it was cheap and could be bonded, and was made by electron beam evaporation method.
It is formed with a film thickness in the range of 00 to 100 OOA.
しかしながら、上記したような酸化亜鉛薄膜の電極構造
では次のような欠点が見られる。つまり、ＡＩｌ電極そ
のものが高い親和性を示すため、酸化亜鉛薄膜中に八ρ
が拡散し、電気的特性が劣化するという欠点がある。す
なわち、２価の半導体である酸化亜鉛に３価であるＡβ
が拡散することによって酸化亜鉛ｓｉｌの電気的特性、
たとえば振動周波数を大きく変化させるという現象が認
められた。また高温負荷寿命試験を行うと、さらに上記
した現象が促進され、電気的特性の劣化が一層大きなも
のとなった。However, the electrode structure of the zinc oxide thin film as described above has the following drawbacks. In other words, since the Al electrode itself shows high affinity, eight ρ in the zinc oxide thin film.
It has the disadvantage that it diffuses and the electrical characteristics deteriorate. In other words, zinc oxide, which is a divalent semiconductor, has Aβ, which is trivalent.
The electrical properties of zinc oxide sil due to the diffusion of
For example, a phenomenon was observed in which the vibration frequency changed significantly. Furthermore, when a high-temperature load life test was conducted, the above-mentioned phenomenon was further accelerated, and the deterioration of the electrical characteristics became even more significant.
したがって、酸化亜鉛薄膜を形成するに当っては、電極
を含めた構成全体について考慮する必要があり、従来の
電極構成にさらに改良を施さなければならなかった。Therefore, when forming a zinc oxide thin film, it is necessary to consider the entire structure including the electrode, and it is necessary to further improve the conventional electrode structure.
この発明はかかる背景からなされたものであり、安定な
特性を示す酸化亜鉛薄膜の電極構造を提供することを目
的とづる。The present invention was made against this background, and an object of the present invention is to provide an electrode structure of a zinc oxide thin film exhibiting stable characteristics.
以下この発明を実施例にもとづいて詳細に説明する。The present invention will be described in detail below based on examples.
第２図はこの発明にかかる酸化亜鉛薄膜の電極構造を音
叉振動子に適用した例を示す側面図である。FIG. 2 is a side view showing an example in which the zinc oxide thin film electrode structure according to the present invention is applied to a tuning fork vibrator.
１１はエリンバなどからなる金属音叉、１２は酸化亜鉛
薄膜、１３はＶ２Ｏ３層、１４は電極である。このうち
７２０３層１３は電子ビーム法、スパッタリング法、
イオンビーム法、抵抗加熱蒸着法などによって形成され
る。11 is a metal tuning fork made of Erimba or the like, 12 is a zinc oxide thin film, 13 is a V2O3 layer, and 14 is an electrode. Of these, 7203 layer 13 was formed by electron beam method, sputtering method,
It is formed by ion beam method, resistance heating evaporation method, etc.
第３図は屈曲振動モードの音片振動子にこの発明にかか
る酸化亜鉛薄膜の電極構造を適用した例を示した斜視図
である。FIG. 3 is a perspective view showing an example in which the electrode structure of the zinc oxide thin film according to the present invention is applied to a sound element vibrator in a bending vibration mode.
図において、２１は振動子本体を示し、振動子２２とこ
れを支持部２４で支持している枠体２３から構成されて
いる。２５は酸化亜鉛薄膜で振動子２２の表面に形成さ
れている。２６は酸化亜鉛薄膜２５の上に形成されたＶ
２Ｏ３層、２７はＶ２Ｏ３層２６の上に形成された／ｌ
電極である。In the figure, reference numeral 21 indicates a vibrator body, which is composed of a vibrator 22 and a frame 23 that supports the vibrator 22 with a support portion 24. 25 is a zinc oxide thin film formed on the surface of the vibrator 22. 26 is a V formed on the zinc oxide thin film 25
2O3 layer 27 is formed on V2O3 layer 26/l
It is an electrode.
第４図は同じくこの発明を他の屈曲振動モードの振動子
に適用した例の側面図である。FIG. 4 is a side view of an example in which the present invention is applied to another bending vibration mode vibrator.
図において、３１はセラミクス、プラスチック、ゴムな
どの基板、この基板３１表面には、Ａρ電極３２、Ｖ２
０３層３３、酸化亜鉛薄膜３４．７２０３層３５、およ
１１極３６が順次形成されている。In the figure, 31 is a substrate made of ceramics, plastic, rubber, etc. On the surface of this substrate 31, an Aρ electrode 32, a V2
03 layer 33, zinc oxide thin film 34, 7203 layer 35, and 11 poles 36 are formed in this order.
第５図は同じくこの発明を拡がり振動モードの振動子に
適用した例を示す側面図である。FIG. 5 is a side view showing an example in which the present invention is applied to a vibrator in a spread vibration mode.
図において、４１は酸化亜鉛薄膜、４２は酸化亜鉛薄膜
４１の両面に形成されたＶ２Ｏ３層、４３はＶ２Ｏ３層
４２の上に形成されたへρ電極である。In the figure, 41 is a zinc oxide thin film, 42 is a V2O3 layer formed on both sides of the zinc oxide thin film 41, and 43 is a ρ electrode formed on the V2O3 layer 42.
第６図は同じくこの発明を厚み振動モードの振動子に適
用した例を示す側面図である。FIG. 6 is a side view showing an example in which the present invention is applied to a thickness vibration mode vibrator.
図において、５１は３ｉ１ＳｉＯ２などからなる基板、
基板５１の上にはＡρ電極５２、Ｖ２０３層５３が順次
形成されている。ざらにＶ２０Ｇ層５３の上には酸化亜
鉛薄膜５４が形成されている。この酸化亜鉛薄膜５４が
形成されている位置に相当する基板５１には空部５１ａ
が形成されている。酸化亜鉛薄膜５４の上にはＶ２Ｏ３
層５５、およびＡρ電極５６が順次積層して形成されて
いる。In the figure, 51 is a substrate made of 3i1SiO2, etc.
On the substrate 51, an Aρ electrode 52 and a V203 layer 53 are sequentially formed. Roughly on the V20G layer 53, a zinc oxide thin film 54 is formed. A vacant space 51a is formed on the substrate 51 corresponding to the position where the zinc oxide thin film 54 is formed.
is formed. On the zinc oxide thin film 54 is V2O3.
A layer 55 and an Aρ electrode 56 are formed by laminating one after another.
次に具体的な実施例として、第２図に示した音叉振動子
についてこの発明にかかる酸化亜鉛薄膜の電極構造を適
用した例を説明する。Next, as a specific example, an example in which the electrode structure of the zinc oxide thin film according to the present invention is applied to the tuning fork vibrator shown in FIG. 2 will be described.
第２図を参照して説明すれば、振動子１１の上にスパッ
タリング法により酸化亜鉛薄膜１２を形成し、その上に
Ｖ２０３を層１３を抵抗加熱蒸着法により６００Ａの厚
みに形成し、さらにその上に厚みが１μからなる／ｌ電
極１４を電子ビーム法により形成した。このようにして
振動周波数３２Ｋｌ−（ｚの撮動子を作成した。To explain with reference to FIG. 2, a zinc oxide thin film 12 is formed on the vibrator 11 by sputtering, a layer 13 of V203 is formed on it to a thickness of 600A by resistance heating vapor deposition, and then A /l electrode 14 having a thickness of 1 μm was formed thereon by an electron beam method. In this way, an imager with a vibration frequency of 32 Kl-(z was created.
この振動子に直流電圧２０Ｖを印加し、１００℃の温度
に １ｏｏｏｏ時間放置した。このときの振動周波数の
経時変化特性を試料数２０個について測定したところ第
１図に示すような結果が得られた。図中実線はこの実施
例によるものである。また破線は従来例のＡｆｆｉ電極
のみからなるものについて、同様にして測定した結果を
示したものである。この振動周波数の経時変化特性（Δ
Ｆ／Ｆｏ）は次式より求めた。A DC voltage of 20 V was applied to this vibrator, and the vibrator was left at a temperature of 100° C. for 100 hours. When the temporal change characteristics of the vibration frequency at this time were measured for 20 samples, the results shown in FIG. 1 were obtained. The solid line in the figure is based on this embodiment. Moreover, the broken line shows the results of measurements made in the same manner for a conventional example consisting only of Affi electrodes. This vibration frequency change characteristic over time (Δ
F/Fo) was determined from the following formula.
また、直列共振抵抗（Ｒｏ ）および並列共振抵抗（Ｒ
ａ ）についてもそれぞれ同様に測定し、その結果を第
８図、第９図にそれぞれ示した。Also, series resonant resistance (Ro) and parallel resonant resistance (R
A) was also measured in the same manner, and the results are shown in FIGS. 8 and 9, respectively.
第１図〜第９図から明らかなように、この発明にかかる
ものは、従来例にくらべて、振動周波数の経時変化が小
さく、またＲＯの経時変化が小さくかつその値も小さく
、ざらにＲａの経時変化も小さいなどの効果が得られて
いる。As is clear from FIGS. 1 to 9, compared to the conventional example, the device according to the present invention has a smaller change in vibration frequency over time, a smaller change in RO over time, and a smaller value thereof, and a rough increase in Ra. Effects such as a small change over time have been obtained.
ここで、Ｒｏ １Ｒａを測定したのは次のような理由に
よる。Here, the reason why Ro 1Ra was measured is as follows.
まず、酸化亜鉛薄膜についてその等両回路を示せば第１
０図のようになる。図中、ｃｄは並列容量を示し、酸化
亜鉛薄膜をコンデンサとして考えた場合の静電容量に近
い値である。ＲＯは直列共振抵抗、Ｃｏは等価容量、［
０は等価インダクタンスである。First, if we show both circuits for a zinc oxide thin film, the first
It will look like Figure 0. In the figure, cd indicates parallel capacitance, which is a value close to the capacitance when a zinc oxide thin film is considered as a capacitor. RO is series resonant resistance, Co is equivalent capacitance, [
0 is equivalent inductance.
またＲａは近似的に次式より求められるものである。Further, Ra is approximately determined by the following equation.
の関係から、直列共振周波数（ｆＯ）に対応し、このＲ
ｏが大きくなれば発振に大きな増幅度が必要となり、発
振条件の低下をもたらすことになることが伺える。From the relationship, this R corresponds to the series resonant frequency (fO).
It can be seen that if o becomes large, a large degree of amplification is required for oscillation, which leads to a deterioration of the oscillation conditions.
またＲａは同じく第１１図に示したインピーダンスと周
波数の関係から、***振周波数（ｆａ）に対応し、この
Ｒａが小さくなれば発振に十分な位相変化がとれず、こ
れもまた発振条件の低下をもたらすことになる。Also, from the relationship between impedance and frequency shown in Figure 11, Ra corresponds to the anti-resonance frequency (fa), and if Ra becomes small, a sufficient phase change for oscillation cannot be achieved, which also reduces the oscillation conditions. It will bring about.
第８図、第９図から明らかなように、この発明の実施例
によれば、従来例のＡρ電極のものにくらべ、Ｒｏ 、
Ｒａの経時変化が小さく、このことからこの発明にかか
る酸化亜鉛薄膜の電極構造は安定な電気的特性を有する
とともに、高温負荷寿命試験に対しても安定した特性を
示すものであると理解することができ、安定した発振を
期待することができる。As is clear from FIGS. 8 and 9, according to the embodiment of the present invention, Ro,
It can be understood that the change in Ra over time is small, and from this it can be understood that the electrode structure of the zinc oxide thin film according to the present invention has stable electrical characteristics and also exhibits stable characteristics even in high temperature load life tests. , and stable oscillation can be expected.
以上この発明によれば、酸化亜鉛薄膜とへ！電極との間
に八ρの拡散防止層としてＶ２０３層を介在させたもの
であり、従来のものにくらべて実用上十分な特性を示す
酸化亜鉛薄膜を提供することができる。特にこの発明に
よれば、高温負荷寿命試験に対してＲｏ 、Ｒａの変化
が小さく、周波数変化が少ないなど信頼性の高い酸化亜
鉛薄膜が得られる。According to this invention, the zinc oxide thin film! A V203 layer is interposed between the electrode and the 8ρ diffusion prevention layer, and it is possible to provide a zinc oxide thin film that exhibits practically sufficient characteristics compared to conventional ones. Particularly, according to the present invention, a highly reliable zinc oxide thin film with small changes in Ro and Ra and little change in frequency can be obtained in a high-temperature load life test.
第１図は音叉振動子の一例を示す側面図、第２図は音叉
振動子にこの発明にかかる酸化亜鉛薄膜の電極ｍ造を適
用した例を示す側面図、第３図は音片振動子にこの発明
にかかる酸化亜鉛Ｎ膜の電極構造を適用−した例の斜視
図、第４図〜第６図は同じくこの発明にかかる酸化亜鉛
薄膜の電極構造を各振動子に適用した例の側面図、第７
図はこの発明の具体的実施例にもとづく振動周波数の経
時変化特性図、第８図は同じくＲｏの経時変化特性図、
第９図は同じくＲａの経時変化特性図、第１０図は酸化
亜鉛薄膜の等両回略図、第１１図はインピーダンスと周
波数の関係特性図Ｃある。
１１・・・・・・基板、１２・・・・・・酸化亜鉛薄膜
、１３・・・・・・Ｖ２Ｏ３Ｎ、１４・・・・・・Ａ
、０電極。
特 許 出 願 人
株式会社村田製作所
−１（
第４ 図
第５図
吊る図
ＴＩＭＥ、 ｔ ｌｌ０１）〜
ＴＩＭＥ（〃Ｏ〃すFig. 1 is a side view showing an example of a tuning fork vibrator, Fig. 2 is a side view showing an example in which the zinc oxide thin film electrode structure according to the present invention is applied to a tuning fork vibrator, and Fig. 3 is a tuning fork vibrator. FIGS. 4 to 6 are side views of examples in which the zinc oxide thin film electrode structure according to the present invention is applied to each vibrator. Figure, 7th
The figure is a temporal change characteristic diagram of vibration frequency based on a specific embodiment of the present invention, and FIG. 8 is a temporal change characteristic diagram of Ro.
FIG. 9 is a characteristic diagram of Ra over time, FIG. 10 is a schematic diagram of the zinc oxide thin film, and FIG. 11 is a characteristic diagram C of the relationship between impedance and frequency. 11...Substrate, 12...Zinc oxide thin film, 13...V2O3N, 14...A
, 0 electrode. Patent applicant Murata Manufacturing Co., Ltd.-1 (Figure 4 Figure 5 Hanging diagram TIME, tll01) ~ TIME (
Claims (1)
を介在させたことを特徴とする酸化亜鉛１膜の電極構造
。To the surface of zinc oxide 111f1! An electrode structure of a single zinc oxide film, characterized in that a V203 layer is interposed between the electrode and the electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11444682A JPS595721A (en) | 1982-06-30 | 1982-06-30 | Electrode structure of thin film of zinc oxide |
| US06/509,028 US4445066A (en) | 1982-06-30 | 1983-06-29 | Electrode structure for a zinc oxide thin film transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11444682A JPS595721A (en) | 1982-06-30 | 1982-06-30 | Electrode structure of thin film of zinc oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS595721A true JPS595721A (en) | 1984-01-12 |
| JPH0115206B2 JPH0115206B2 (en) | 1989-03-16 |
Family
ID=14637932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11444682A Granted JPS595721A (en) | 1982-06-30 | 1982-06-30 | Electrode structure of thin film of zinc oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS595721A (en) |
-
1982
- 1982-06-30 JP JP11444682A patent/JPS595721A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0115206B2 (en) | 1989-03-16 |
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