JPS5941876A - Manufacture of photodiode - Google Patents
Manufacture of photodiodeInfo
- Publication number
- JPS5941876A JPS5941876A JP57026440A JP2644082A JPS5941876A JP S5941876 A JPS5941876 A JP S5941876A JP 57026440 A JP57026440 A JP 57026440A JP 2644082 A JP2644082 A JP 2644082A JP S5941876 A JPS5941876 A JP S5941876A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- reflection preventing
- light
- film
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 230000003405 preventing effect Effects 0.000 abstract description 10
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 37
- 230000000694 effects Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、フ第１・ダイオードの製造方法において、
入射光の反射防止効果を高めるようにしたフ第１・ダイ
オードの製造方法を提供しようとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for manufacturing a first diode, comprising:
It is an object of the present invention to provide a method for manufacturing a first diode that enhances the effect of preventing reflection of incident light.
従来、ビームインデックス型カラー受像管装置は、受像
管のフェースプレート内壁に形成された蛍光面のインデ
ックス蛍光体ストライプ列を、水平走査にもとづく電子
銃の単一電子ビームによりパルス的に照射し、インデッ
クス蛍光体ス！・ライブ列からインデック光信号を発生
させるとともに、発生したインデックス光信号を電気的
なインデックス信号に変換し、当該インデックス信号に
より単一電子ビームを制御して受像管に正しいカラー再
生を行なわせる。Conventionally, a beam index type color picture tube device pulses a row of index phosphor stripes on a phosphor screen formed on the inner wall of the face plate of the picture tube with a single electron beam from an electron gun based on horizontal scanning. Fluorescent material! - Generate an index optical signal from the live array, convert the generated index optical signal into an electrical index signal, and use the index signal to control a single electron beam to cause the picture tube to perform correct color reproduction.
そこで、インデックス光信号を有効に検出してインデッ
クス信号に変換する必要、すなわち検出効率を高める必
要があり、インデックス蛍光体ストライプ列から発生し
たインデックス光信号を蛍光集光板に入射させ、該蛍光
集光板によりインデックス光信号の波長を波長変換する
とともに、波長変換したインデックス光信号をフォトダ
イオードで検出する方法が提供され、この場合、蛍光集
光板により波長変換されたインデックス光信号の波長が
、フォトダイオードの高感度領域の波長になるように設
定され、フォトダイオードにインデックス光信号が有効
に入射される。Therefore, it is necessary to effectively detect the index light signal and convert it into an index signal, that is, to increase the detection efficiency. provides a method of wavelength converting the wavelength of an index optical signal and detecting the wavelength-converted index optical signal with a photodiode. The index light signal is set to have a wavelength in a high sensitivity region, and the index light signal is effectively input to the photodiode.
そして、前述のインデックス光信号を検出したリする従
来のフ第１・ダイオードは、第１図に示すように、ｎ型
シリコン基板ｉｌｌのｎ層部（２）の上部にｐ層部（３
）が適当な深さに形成され、ｎ層部（２）と１層部（３
）とにより光電変換部を形成するｌ）ｎ接合部が形成さ
れる。As shown in FIG. 1, the conventional first diode that detects the index optical signal described above has a p-layer part (3) on top of an n-layer part (2) of an n-type silicon substrate ill.
) is formed to an appropriate depth, and the n-layer part (2) and the first-layer part (3
) to form a l)n junction which forms a photoelectric conversion section.
捷だ、ｎ層部（２）の下部に光電流取り出し用の一方の
電極（４）が設けられ、るとともに、ｐ層部（３）の上
部の一部に光電流取り出し用の他方の電極（５）および
二酸化ケイ素（Ｓｉ０２）からなる保護膜（６）が形成
されている。One electrode (4) for extracting photocurrent is provided at the bottom of the n-layer part (2), and the other electrode for extracting photocurrent is provided at a part of the upper part of the p-layer part (3). (5) and a protective film (6) made of silicon dioxide (Si02).
さらに、１層部（３１の受光面＋３１’の」一部に、二
酸化ケイ素からなる反射防止膜（７ａ）が熱酸化法によ
り形成され、前述のインデックス光信号などの入射光（
８）の反射を防止し、入射する光（８）の吸収率の向」
二が計られる。Further, an antireflection film (7a) made of silicon dioxide is formed on a part of the first layer part (light receiving surface of 31 + 31') by a thermal oxidation method, and the incident light such as the above-mentioned index optical signal is
8) to prevent the reflection of light (8) and improve the absorption rate of incident light (8).
Two is measured.
ところで、第２図に示すように、基板（１）２反射防止
膜（７ａ）の屈折率をＮｘ、Ｎａそれぞれで表わすとと
もに、基板（１）の外部すなわち雰囲気の屈折率をＮｙ
で表わした場合、受光面（３Ｙに垂直に入射した光（８
Ｙの反射率孔ば、つぎの（１）式で示される。なお、ｉ
ｌ１式において１′）ａは反射防止膜（７ａ）の厚みで
あり、λは光（８γの波長である。By the way, as shown in FIG. 2, the refractive index of the substrate (1) 2 and the antireflection film (7a) is expressed by Nx and Na, respectively, and the refractive index of the outside of the substrate (1), that is, the atmosphere is expressed by Ny.
When expressed as , the light incident perpendicularly to the light receiving surface (3Y
The reflectance of Y is expressed by the following equation (1). In addition, i
In equation 1, 1')a is the thickness of the antireflection film (7a), and λ is the wavelength of light (8γ).
（Ｎｘ２＋Ｎａ２）（Ｎａ２＋Ｎｙ２）＋４ＮｘＮａ２
Ｎｙ ＋そして反射率■が最小に女るときの反射防止膜
（７ａ）の厚みＤａかつぎの（２）式で示され、このと
きの反射率Ｒが（３）式で示される。なお、（２）式に
おいてｍは整数を示す。(Nx2+Na2) (Na2+Ny2)+4NxNa2
The thickness Da of the anti-reflection film (7a) when Ny + and the reflectance (2) is at its minimum is expressed by the following equation (2), and the reflectance R at this time is expressed by the equation (3). Note that in formula (2), m represents an integer.
Ｄａ ＝λ（２ｍ ＋ｉ）／４Ｎａ 、、、 （２１
式一方、反射防止膜（７ａ）の厚み１）ａがつぎの（４
）式を満足するときには、反射率几カ（５）式で示され
るように、反射防止膜（７ａ）がないときと等価になる
。Da = λ (2m + i)/4Na ,, (21
On the other hand, the thickness 1) a of the antireflection film (7a) is the following (4
), the reflectance becomes equivalent to the case without the antireflection film (7a), as shown in equation (5).
Ｄａ ＝λｍ ／ ’ｌ Ｎａ −＝ ［４）式
そして雰囲気が空気の場合、すなわちＮｙ＝＝ｌ、Ｑの
場合に、λ−５００ｎｍの光（８Ｙに対して基板ｆｉ１
の屈折率ＮＸ ＝ ４．２５か−）反射防止膜（７ａ）
の屈折率Ｎａ ＝ １．４６であれば、（３）式の反射
率Ｒが１１％になり、（５）式の反射率孔が３８％にな
る。すなわち反射防止膜（７ａ ）Ｋよる反射防止効果
が生じる。Da = λm / 'l Na - = [4] And when the atmosphere is air, that is, when Ny = = l, Q, λ - 500 nm light (substrate fi1 for 8Y
Refractive index of NX = 4.25 -) Anti-reflection film (7a)
If the refractive index Na = 1.46, the reflectance R in equation (3) becomes 11%, and the reflectance hole in equation (5) becomes 38%. That is, the antireflection effect of the antireflection film (7a)K is produced.
ところで、フォトクイオードにより前述の蛍光集光板か
らのインデックス光信号を検出したりする場合、フォト
ダイオードが蛍光集光板と同一相折率の物質により蛍光
集光板に結合され、蛍光集光板の屈折率を１．５とした
場合、（３）式および（５１式の屈折率ＮＹ＝１．５に
なり、（３）式の反射率Ｒが２５％になり、（５）式の
反射率孔が２３％になり、反射防止膜（７ａ）による反
射防止効果が全く生しない。By the way, when detecting the index light signal from the above-mentioned fluorescence condensing plate using a photodiode, the photodiode is coupled to the fluorescence condensing plate by a substance having the same phase refractive index as the fluorescence condensing plate, and the refractive index of the fluorescence condensing plate is When is set to 1.5, the refractive index NY of equations (3) and (51) becomes 1.5, the reflectance R of equation (3) becomes 25%, and the reflectance hole of equation (5) becomes 23%, and the antireflection effect of the antireflection film (7a) is not produced at all.
一方、（３）式における反射率孔を最小にする反射防止
膜（７ａ）の屈折率ＮａＯ値かつぎの（６）式で示され
る。On the other hand, the refractive index NaO value of the antireflection film (7a) that minimizes the reflectance hole in equation (3) is expressed by the following equation (6).
Ｎａ ｆ−Ｊｐｘ五 ・（６）式
そして、Ｎｘ ＝ ４・、２５かつＮｙ＝ １．５ （
！： した場合、Ｎａキ２．５ になり、（３）式に
おいて、反射防出膜（７ａ）の屈折率Ｎａを２６５程度
にした場合に、反射防止膜（７ａ）による反射防止効果
が最大になり、いわゆる反射損失が最小になる。Na f-Jpx5 ・Equation (6) and Nx = 4・, 25 and Ny = 1.5 (
! : In the case where Na is 2.5, in equation (3), when the refractive index Na of the anti-reflection film (7a) is set to about 265, the anti-reflection effect of the anti-reflection film (7a) is maximized. Therefore, the so-called reflection loss is minimized.
しかし、二酸化ケイ素の熱酸化法により形成された反射
防止膜（７ａ）の屈折率Ｎａ＝２．５にすることは困難
であり、たとえば雰囲気の屈折率Ｎｙ＝１．５ など
の場合、反射防止膜（７ａ）による反射防止効果を高め
ることは困難である。However, it is difficult to make the refractive index Na=2.5 of the antireflection film (7a) formed by the thermal oxidation method of silicon dioxide. For example, when the refractive index Ny of the atmosphere is 1.5, It is difficult to enhance the antireflection effect of the film (7a).
この発明は、前記の点に留意してなされたものであり、
つぎにこの発明を、その１実施例を示しだ第８図ととも
に詳細に説明する。This invention was made with the above points in mind,
Next, the present invention will be explained in detail with reference to FIG. 8 showing one embodiment thereof.
第３図において、第１図および第２図と同一記号は同一
のものを示し、基板＋１１の受光面（３Ｙの上部に第１
図の反射防止膜（７ａ）と同様に、熱酸化法により二酸
化ケイ素の下部反射防出膜（７ａ）’を形成した後に、
下部反射防止膜（７ａ ）’の上部に、二酸化ケイ素よ
り高い屈折率Ｎｂを有する−に二部反射防止膜（７ｂ）
ヲＣＡＤやスパッタリングがどの光学薄膜形成方法によ
り形成し、このとき、」二部反射防止膜（７ａ）’ の
厚みＩ）ａ／を、（４）式にもとづき、Ｉ）ａ／−λｍ
／２Ｎａに形成し、」一部反対防止膜（’７ ａ ）’
がないときと等価にするとともに、下部反射防止膜（７
ｂ）を、（６）式にもとづき、Ｎ １１＝ ＶＫ杯Ｇ−
の屈折率Ｎｈを有する物質、たとえばＮｂ’＝２．３５
の二酸化チタン（Ｔｉ０２）の膜により、−Ｌ一部
反射防止膜（７１，＋ ）の厚み川）が、（２）式にも
とづき、■）ｈ＝λ（２＋１１＋１ ）／４Ｎｂになる
ヨウに形成する。In FIG. 3, the same symbols as in FIGS. 1 and 2 indicate the same things, and
Similar to the anti-reflection film (7a) in the figure, after forming the lower anti-reflection film (7a)' of silicon dioxide by thermal oxidation method,
On top of the lower anti-reflective coating (7a)' is a two-part anti-reflective coating (7b) having a higher refractive index Nb than silicon dioxide.
Which optical thin film forming method is used, such as OCAD or sputtering, and at this time, the thickness I)a/ of the "two-part anti-reflection film (7a)' is determined by I)a/-λm based on equation (4).
/2Na, ``partial anti-opposition film ('7a)''
In addition to making it equivalent to when there is no lower anti-reflection film (7
b), based on formula (6), N 11 = VK Cup G-
A material having a refractive index Nh, for example Nb'=2.35
The thickness of the -L partial antireflection film (71,+) is formed by the titanium dioxide (Ti02) film so that, based on equation (2), h=λ(2+11+1)/4Nb. do.
すなわち、基板ｆｌｌの２層部との接合部に、従采のフ
オ］−クイオードの製造方法と同様に、二酸化ケイ素の
熱酸化方法により屈折率Ｎａの下部反射防止膜（７１）
’を、当該反射防１ト膜（７ａ ）’の厚み１）ａ′が
、光（８Ｙの波長λに対してλ７２Ｎａ の整数倍に
なるように形成した後に、下部反射防止膜（７ａ）’の
−Ｌ部に、二酸化ケイ素より高い屈折率Ｎｂを有する」
一部反射防止膜（７ｂ ）を、当該反射防山膜（７ｈ）
の厚みＩ）１〕が、光ｔｓｙの波長λに対してλ／４Ｎ
＋）の奇数倍になるように形成し、基板（１）の屈折率
Ｎｘや雰囲気の屈折率Ｎｙに応じて最も反射防止効果が
高まるように製造する。That is, a lower anti-reflection film (71) having a refractive index of Na is formed on the junction with the second layer of the substrate fl by the thermal oxidation method of silicon dioxide, similar to the method for manufacturing the secondary photodiode.
After forming the lower anti-reflection film (7a)' so that the thickness 1)a' of the anti-reflection film (7a)' is an integral multiple of λ72Na with respect to the wavelength λ of light (8Y), the lower anti-reflection film (7a)' has a higher refractive index Nb than silicon dioxide in the -L part of
Part of the anti-reflection film (7b) is replaced with the anti-reflection film (7h).
The thickness I)1] is λ/4N with respect to the wavelength λ of the light tsy.
+), and manufactured so that the antireflection effect is maximized depending on the refractive index Nx of the substrate (1) and the refractive index Ny of the atmosphere.
したがって、ＯＡ前記実施例によると、熱酸化法により
二酸化ケイ素の下部反射防止膜（７ａ）’を、光（８Ｙ
に対して下部反射防止膜（７ａ）’のないときと等価に
なるように形成するとともに、基板ｔ＋ｌの屈折率Ｎｘ
および雰囲気の屈折率Ｎｙに応じて、下部反射防止膜（
７ａ）’の上部に、二酸化ケイ素の屈折率Ｎａより高い
屈折率Ｎｂの上部反射防［に膜（７ｂ）を、光Ｆ８ｒに
対して反射率几が最小になるように形成したことにより
、たとえば上部反射防止膜（７ｂ ）を前述の二酸化チ
タンで形成した場合、光［８ｒに対する全体の反射率が
０．５％に減少し、光（８Ｙに対して非常に大きな反射
防止効果を得ることができ、たとえば、ビームインデッ
クス型カラー受像管装置の蛍光集光板により波長変換さ
れたインデックス光信号の検出に使用した場合、非常に
効率良くインデックス光信号を検出して電気的なインテ
ックス信号に変換することができ、検出効率を大幅に向
上させることができる。Therefore, according to the above embodiment of OA, the lower antireflection coating (7a)' of silicon dioxide is coated with light (8Y
The refractive index Nx of the substrate t+l is formed to be equivalent to that without the lower antireflection film (7a)'.
And depending on the refractive index Ny of the atmosphere, the lower antireflection film (
By forming an upper anti-reflection film (7b) on the top of 7a)' with a refractive index Nb higher than the refractive index Na of silicon dioxide so as to minimize the reflectance for light F8r, for example, When the upper antireflection film (7b) is formed of the above-mentioned titanium dioxide, the overall reflectance for light [8r] decreases to 0.5%, and it is difficult to obtain a very large antireflection effect for light (8Y). For example, when used to detect an index optical signal whose wavelength has been converted by a fluorescence condenser in a beam index type color picture tube device, it is possible to detect the index optical signal very efficiently and convert it into an electrical intex signal. can significantly improve detection efficiency.
なお、反射防止膜（７１りの形成後に、エポキシ樹脂な
どによりモールドすると、−斜反射率を減少させること
ができる。Note that after forming the antireflection film (71), if it is molded with epoxy resin or the like, the -oblique reflectance can be reduced.
寸だ、反射防止膜（７ｈ）を両電極＋４１ 、 （６１
の形成前寸だは両電極Ｉ４Ｉ 、 ｔ６１の形成後に形
成しても同様の効果を得ることができる。The anti-reflection film (7h) is attached to both electrodes +41, (61
The same effect can be obtained even if the electrodes I4I and t61 are formed before and after the electrodes I4I and t61 are formed.
以上のように、この発明のシリコンフォトダイオードの
製造方法によると、二酸化ケイ素からする屈折率Ｎａの
下部反射防止膜を、熱酸化法により光の波長スに対して
λ／ｇＮａの整数倍の厚みに形成し、かつ、下部反射防
止膜の」二部に二酸化ケイ素より高い屈折率Ｎｂの上部
反射防止膜を、λ／４Ｎｈの奇数倍の厚みに形成したこ
とにより、受光面に入射する光の反射防止効果を非常に
向上させ、入射する光の検出効率を大幅に同上させるこ
とができるものである。As described above, according to the method of manufacturing a silicon photodiode of the present invention, a lower antireflection film made of silicon dioxide and having a refractive index of Na is formed by a thermal oxidation method to a thickness that is an integral multiple of λ/gNa with respect to the wavelength of light. By forming an upper anti-reflection film with a refractive index Nb higher than that of silicon dioxide on the second part of the lower anti-reflection film and having a thickness that is an odd multiple of λ/4Nh, the light incident on the light-receiving surface is reduced. The antireflection effect can be greatly improved, and the detection efficiency of incident light can be greatly increased.
第１図は一般的なフォトダイオードの断面図、第２図は
第１図の反射１万圧効果の説明用の断面図、第″３図は
この発明のフォトダイオードの製造方法の１実施例の説
明用の断面図である。
（１）・シリコン基板、（３１、Ｉ）盾部、＋３ｒ・・
・受光面、（７ｆ１）’ ｌ一部反射１ｉ７ｊ ＋）
膜、（７ｈ） −下１文射Ｍ止１１１Ｌ−３：
手続補正書（自発）
昭和５７年３ 月２９日
２発明の名称
シリコンフォトダイオードの製造方法
３補正をする者
事件との関係 特 許 出 願人圧 所
大阪府守口市京阪本通２丁目１８番地名 称 （１
８８） 三洋電機株式会社代表者 井
植 薫代理人 〒５３０
住 所 大阪市北区東天満２］薯」９番４号５補正の対
象 明細書の「発明の詳細な説明」の欄６補正の内容
（１）第６頁第１８行（７）ｒｃＡＤＪ を［ＣＶＤＪ
に補正。
３５６−Fig. 1 is a cross-sectional view of a general photodiode, Fig. 2 is a cross-sectional view for explaining the reflected 10,000-pressure effect in Fig. 1, and Fig. 3 is an embodiment of the photodiode manufacturing method of the present invention. It is a sectional view for explaining. (1) Silicon substrate, (31, I) shield part, +3r...
・Light receiving surface, (7f1)'l partially reflected 1i7j +)
Membrane, (7h) - Bottom 1st sentence M stop 111L-3: Procedural amendment (voluntary) March 29, 1981 2 Title of invention 3 Process for manufacturing silicon photodiode 3 Relationship to the person making the amendment Patent Number of applicants Address: 2-18 Keihan Hondori, Moriguchi City, Osaka Prefecture Name (1)
88) Sanyo Electric Co., Ltd. Representative Ii
Kaoru Ue Agent Address: 530 Address: 2 Higashitenma, Kita-ku, Osaka City] No. 9, No. 4, No. 5 Subject of amendment Contents of amendment in column 6 of “Detailed Description of the Invention” of the specification (1) Page 6, No. 18 Line (7) rcADJ [CVDJ
Corrected to. 356-
Claims (1)
を形成するとさもに、前記２層の上部に二酸化ケイ素か
らなる屈折率Ｎａの下部反射防止膜を、熱酸化法により
光の波長大に対してス／ ｇＮａの整数倍の厚みに形成
し、かつ、前記下部反射防止膜の−に部に前記二酸化ケ
イ素より高い屈折率Ｎｈの上部反射防止膜をλ／４Ｎ１
１の奇数倍の厚みに形成しんこトラ特徴とするフォトダ
イオードの製造方法。■ One layer having a light-receiving surface is formed on top of the r1 layer of the silicon substrate, and at the same time, a lower antireflection film made of silicon dioxide and having a refractive index of Na is formed on the top of the two layers, and the wavelength of light is increased by a thermal oxidation method. On the other hand, an upper antireflection film is formed to have a thickness that is an integral multiple of S/gNa, and has a refractive index Nh higher than that of the silicon dioxide on the negative side of the lower antireflection film.
A method for manufacturing a photodiode characterized by forming a thin layer with a thickness of an odd number multiple of 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57026440A JPS5941876A (en) | 1982-02-19 | 1982-02-19 | Manufacture of photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57026440A JPS5941876A (en) | 1982-02-19 | 1982-02-19 | Manufacture of photodiode |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10316482A Division JPS58142739A (en) | 1982-06-15 | 1982-06-15 | Beam-index type color tv receiving set |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5941876A true JPS5941876A (en) | 1984-03-08 |
Family
ID=12193562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57026440A Pending JPS5941876A (en) | 1982-02-19 | 1982-02-19 | Manufacture of photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5941876A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6222126B1 (en) | 1997-09-08 | 2001-04-24 | Thomas & Betts International, Inc. | Woven mesh interconnect |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5261983A (en) * | 1975-11-18 | 1977-05-21 | Seiko Epson Corp | Solar cell |
| JPS5465491A (en) * | 1977-11-04 | 1979-05-26 | Nippon Toki Kk | Method of forming reflection preventive membrane of solar battery |
-
1982
- 1982-02-19 JP JP57026440A patent/JPS5941876A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5261983A (en) * | 1975-11-18 | 1977-05-21 | Seiko Epson Corp | Solar cell |
| JPS5465491A (en) * | 1977-11-04 | 1979-05-26 | Nippon Toki Kk | Method of forming reflection preventive membrane of solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6222126B1 (en) | 1997-09-08 | 2001-04-24 | Thomas & Betts International, Inc. | Woven mesh interconnect |
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