JPS5939724A - Manufacture of dielectric powder for thick film - Google Patents
Manufacture of dielectric powder for thick filmInfo
- Publication number
- JPS5939724A JPS5939724A JP57149706A JP14970682A JPS5939724A JP S5939724 A JPS5939724 A JP S5939724A JP 57149706 A JP57149706 A JP 57149706A JP 14970682 A JP14970682 A JP 14970682A JP S5939724 A JPS5939724 A JP S5939724A
- Authority
- JP
- Japan
- Prior art keywords
- isopropyl alcohol
- thick film
- soln
- alkoxide
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は破割で欠１ｉｔ／ｌの少ない厚１漠コンデンサ
磁器ン得るための厚膜用誘電体粉末の製造法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing a thick film dielectric powder for obtaining a thin capacitor porcelain with a small thickness of 1 it/l.
従来例の構成とその問題点
コンデンサ素子を小型化、大谷縫化するため、誘電体Ｉ
ｎと電極層を交互に積Ｉｌｌ Ｌ／ ／こ厚膜誘電体０
器が実用化されでいる。小型大容量のコンデンサ素子を
得る方法としては、比誘電率の大きい誘電体を用いる方
法と、誘電体層の厚さを薄くする方法が考えられる。し
かしながら室温において比誘電率が大きい誘″Ｐｌｔ体
材料は温度裟化が大きい場合実用に供し得ない。−万、
誘電体の厚さを薄くする方法では耐電圧が低下するとい
う問題があり、厚膜コンデンサにおいて５０Ｖの定格電
圧？得るためには２５〜３０μｍの膜厚が必要であると
言われている。一般に、べい耐電圧を有する厚膜磁器は
気孔が少な（、均一で小さい焼成粒径を持つ。このよう
な磁器を得るには、原料粉末の粒度が細かく、且つ粒度
分布幅が小さいことが望ましい。従来より使用されてい
る固相反応から得られる原料粉末では粒径は１μｍ以下
にすることは困難であり、粒度分布幅も大きい。微細で
粒度分布幅が小さい誘電体粉末は金属アルコキシドの加
水分解によって得られ、８ｒＴｉ０３やＢａＴｉ（Ｊ３
の合成について文献等で公知である。８ｒＴｉＵ、は比
誘電率が２００程度であるため、小型大容瓜のコンデン
サには適さない。Conventional configuration and its problems In order to miniaturize the capacitor element and make it Otani stitch, dielectric I
N and electrode layers are alternately stacked Ill L//thick film dielectric 0
The device has been put into practical use. Possible methods for obtaining a small-sized, large-capacitance capacitor element include a method of using a dielectric material with a high relative dielectric constant, and a method of reducing the thickness of the dielectric layer. However, the dielectric PLT material, which has a large dielectric constant at room temperature, cannot be put to practical use if the temperature change is large.
The method of reducing the thickness of the dielectric material has the problem of lowering the withstand voltage, and the rated voltage of 50V for thick film capacitors? It is said that a film thickness of 25 to 30 μm is required to obtain this. In general, thick film porcelain with high withstand voltage has few pores (uniform and small fired grain size). To obtain such porcelain, the raw material powder must have fine grain size and a narrow particle size distribution width. Desirable. It is difficult to reduce the particle size to 1 μm or less with conventionally used raw material powders obtained from solid phase reactions, and the particle size distribution width is also large. Dielectric powders that are fine and have a narrow particle size distribution width are made of metal alkoxides. It is obtained by hydrolysis, and 8rTi03 and BaTi(J3
The synthesis of is known in the literature. Since 8rTiU has a dielectric constant of about 200, it is not suitable for small and large capacitors.
ＢａＴｉＯ３は比誘電率が１ｓｏＯ＜ｍ度と＾いが、焼
成した磁器は倣Ｍｌ構造として一部に２０〜８０μｍに
異常粒成長した粒子を持つ二重構造を取り易く、膜厚カ
８０μｍ以下で高い耐電圧を有する厚膜コンデン膜コン
デンサを得るためには均一で小さい焼成粒径を持も、Ｊ
−ｂ ｒ＆”； 電率が１６００以Ｐ：、 ｉｈ ル４
＆ 気ｔ 実ｊｕする原料粉本が必要とされる。BaTiO3 has a dielectric constant of 1soO<m degrees, but fired porcelain tends to have a double structure with particles that have abnormal grain growth of 20 to 80 μm as a modeled Ml structure, and when the film thickness is 80 μm or less, In order to obtain a thick film capacitor with high withstand voltage, J
-b r&”; Electricity is 1600 or more P:, ih le 4
& A raw material powder book for fruit production is required.
発明の目的
本発明は裁属アルコキシドの加水分ｉｔｒゲ（こまり、
前述の条件を１ｉ１ｉｉだす誘電体伺ネ・１の微粉末の
肢Ｊｆｆ法を提供するものであり、この微粉末を原料に
することによって室温における比絖垣率が１６００以七
であり、且つ焼成粒径を均一でｌｐｍ以丁にできる。Purpose of the Invention The present invention is directed to the hydrolysis of alkoxides.
The purpose is to provide a method using a fine powder of dielectric material 1 which satisfies the above-mentioned conditions, and by using this fine powder as a raw material, the specific conductivity at room temperature is 1600 or more, and the firing rate is The particle size can be made uniform and smaller than lpm.
従ってｌＯμｎｌの膜厚にしｔこときにも＋ｉ＋＋Ｊ
’Ｍ！任が１５０Ｖ以Ｐ、 ｔｊ）る小Ｒ１大谷量の厚
膜磁器コ／デ／２′サーを作成することを可能とした。Therefore, even if the film thickness is lOμnl, +i++J
'M! This made it possible to create a thick-film porcelain core/de/2' circuit with a small R1 voltage and a voltage of 150 V or more.
発明の構成
り記目的な達ｈ（するため、本発明のＩ＝Ｌ ＩＩ＞’
４訪）ａ体粉末の製造法は、金屑アルコキシドの加水分
解により酸化物の微粉末を得る方法において、４８．Ｕ
Ｏ〜４９．９４モル％のバリウムジアルコキシド、４４
．０〜４９．８１モル％のチタンテトラアルコキシド、
０．２５〜８モル％のアンチモンアルコキシドなそれら
の５倍以りの徂献のイソプロピルアルコールにＭ解、兄
合すセ、そＵ） 兄？ｒ ％ ？＆ Ｉｔ 、４０ ＝
８５ＣＯ） ｍ度、には持し慟拌し４ｃがらその溶液
中に水−イソプロビルアルコール混合溶液（車駁比ｉ：
ｉｏ〜２：１）をルＫＦｂ、アンチモンドープＢａＴｉ
Ｏ３の沈殿物全生成させた後、−水一アーレコール混合
溶液から沈澱物を分５１Ｌ％帖燥させ、４００〜１００
００の温度でカ旧礪処理するものである。Structure of the invention In order to achieve the objective h (I=L II>' of the present invention
4) The method for producing the a-form powder is a method for obtaining fine powder of oxide by hydrolysis of gold scrap alkoxide. U
O~49.94 mol% barium dialkoxide, 44
．． 0-49.81 mol% titanium tetraalkoxide,
0.25 to 8 mol% of antimony alkoxide, more than 5 times the amount of isopropyl alcohol. r%? & It, 40 =
85 CO) m degrees, stir for 4 c and add a water-isopropyl alcohol mixed solution (vehicle ratio i:
io~2:1) LeKFb, antimony-doped BaTi
After all of the O3 precipitate was formed, the precipitate was dried by 51 L% from the -water-arecol mixed solution, and
It is used for aging treatment at a temperature of 0.00°C.
実施例の説明
以Ｆ本発明の実施鉤について、図面に基づいて説明すル
、 ｔ３８Ｔ１ｏ、 ニＢａ ７８ ｂ９３カ少ｐ１ｙ
溶シタ系に合力見するため、バリウムジアルコキシド
、ブータンテトラブトキシド又はチタンテトラプロポキ
シド、アンチモンペンタブトキシド又はアンチモントリ
ブトキシドを所定Ｊｉ秤緘し、その合計貢琺の２０倍の
Ｊμ量のイソプロピルアルコールな刀１１え、８０”（
、！に保持し′Ｃむ五拌する。約２＋３−１１υのｂｖ
拌により、固形のバリウムジアルコキシドが溶解する。DESCRIPTION OF EMBODIMENTS The implementation hook of the present invention will be explained based on the drawings.
In order to measure the combined force in the soluble system, barium dialkoxide, butane tetrabutoxide, titanium tetrapropoxide, antimony pentabutoxide, or antimony tributoxide was weighed at a given weight, and an amount of isopropyl alcohol was added which was 20 times the total weight. Sword 11e, 80” (
,! Hold at 50°C and stir. bv of about 2+3-11υ
The solid barium dialkoxide is dissolved by stirring.
更に４〜８時間攪拌を続けた後、８０″Ｃに保持したま
ま水とイソプロピルアルコールを１対ｌに混合した溶液
をｌ丙ドする。Ａｔする浴液の量は全ての被腐アルコキ
シドが加水分解するのに必要な水の城の８倍量が加わる
ように設定した。水−イソプロビルアルコール溶液の滴
Ｆにより、彼属アルコキシドの溶液にはｖＪ澱物が生じ
て不透明になる。設定量の水−イソプロビルアルコール
溶液な滴ドした後、８０’Ｃに船待しながら更に６時開
攪拌を続け、未反応な金属アルコキシドが残留しないよ
うに熟成する。熟成を終えた後、沈澱物と溶液を遠心分
離機又は蒸発乾燥によって分離する。沈澱物はペロウス
カイト構造を有していることをＸ線により確認した。又
沈澱物粒子の粒子径は数十人であり、５〜１０重鰍％の
アルコール類を吸蔵しているので、４００〜１０００’
Ｃで加熱処理を行なった。加熱処理によって沈澱物は数
６〜千人の粒径を持つ倣粒子になる。After continuing stirring for another 4 to 8 hours, a solution of water and isopropyl alcohol mixed at a ratio of 1:1 is added to the tank while maintaining the temperature at 80"C. The amount was set so that 8 times the amount of water required for decomposition was added.The droplet F of the water-isopropyl alcohol solution causes the formation of vJ precipitate in the alkoxide solution, making it opaque.Set amount After dropping a water-isopropyl alcohol solution, the mixture is heated to 80'C and stirring is continued at 6 o'clock to age it so that no unreacted metal alkoxide remains.After aging, the precipitate is removed. and the solution are separated by a centrifuge or evaporative drying.It was confirmed by X-ray that the precipitate has a perouskite structure.The particle size of the precipitate particles is several tens of particles, and it is 5 to 10 particles. % of alcohol, so 400~1000'
Heat treatment was performed at C. By heat treatment, the precipitate becomes imitative particles with a particle size of several 6 to 1,000 particles.
次に微粉末の合成条件について種々検討した結果につい
て述べる。金属アルコキシドをイソプロピルアルコール
中に溶解させるとき、溶液の温度を４０℃以下で撹拌し
た場合、バリウムジブロｉ？キシトは２時間後にも溶解
せずに残存するため、４０゛ＣＪＪ、に：、に加熱する
ことが必要である。又イソプロピルアルコールの沸点が
８５”Ｃであるから、この温度以りにすることは好まし
くない。加水分解時の温度を４０′Ｃ以下にした場合、
沈澱物は非晶質を多く含み、水配基が５〜ｌｏｇ量％存
在す−るので、加水分解時の温度も４０〜８５Ｃにする
必要がある。イソプロピルアルコール中の金属アルコキ
シドの重量％が２０％以下になると溶解させるのが著し
るしく困難であるため、金属アルコキシドの濃度は２０
屯量％以丁にする必要がＪ）る。加水分解反応のために
滴−卜する水−イソプロピルアルコール溶液の水の湿度
が６７重量％以しになると非晶質が生成する。又１０％
以下では加水分解反応の進行中に金属アルコキシドの濃
度変化が無視し得なくなり、沈澱物の粒度分布幅が広が
る。従って水−イソプロピルアルコールの重量比は２：
１〜１：ｌＯが犠当である。）Ｍ水分解反応後の熱酸を
行なわない場合、ドープしたアンチモンの均一性が得ら
れない。沈澱、乾燥粉末の加熱処理温度が４００’Ｏ以
下では吸蔵されているアルコー−レ類が残留し、焼成し
たときに気孔率が増加する。又１０００ ’Ｃｋ ’ｉ
＋ｅＡえると粒子径の成長が著しく、反応性が低下する
ため、金属アルコキシドの加水分解により微粒子を作成
するという目的にそぐわなくなる。Next, we will discuss the results of various studies regarding the synthesis conditions for fine powder. When a metal alkoxide is dissolved in isopropyl alcohol, if the temperature of the solution is stirred at 40°C or lower, barium dibroi? Since xyto remains undissolved even after 2 hours, it is necessary to heat it to 40°CJJ. Also, since the boiling point of isopropyl alcohol is 85'C, it is not preferable to raise the temperature above this temperature.If the temperature during hydrolysis is set to 40'C or less,
Since the precipitate contains a large amount of amorphous material and contains 5 to log % of water groups, the temperature during hydrolysis must also be 40 to 85C. If the weight percent of metal alkoxide in isopropyl alcohol is less than 20%, it is extremely difficult to dissolve the metal alkoxide, so the concentration of metal alkoxide is 20% by weight or less.
J) It is necessary to reduce the tonnage by %. When the humidity of the water-isopropyl alcohol solution added dropwise for the hydrolysis reaction becomes 67% by weight or more, an amorphous substance is formed. Another 10%
Below, during the progress of the hydrolysis reaction, the concentration change of the metal alkoxide becomes impossible to ignore, and the width of the particle size distribution of the precipitate widens. Therefore, the weight ratio of water to isopropyl alcohol is 2:
1-1:1O is the sacrificial allowance. ) If the thermal acidification after the M water splitting reaction is not carried out, the uniformity of the doped antimony cannot be obtained. If the heat treatment temperature of the precipitated and dry powder is below 400'O, occluded alcohols remain and the porosity increases when fired. Also 1000 'Ck 'i
If +eA is exceeded, the particle size will grow significantly and the reactivity will decrease, which will no longer suit the purpose of producing fine particles by hydrolyzing metal alkoxide.
以を述べた合成条件をまとめる。金１ｉ４アルコキシド
の溶ｊ４１及び加水分解反応は４０〜８５゛Ｃで行なう
。The synthesis conditions described above are summarized below. The dissolution and hydrolysis reaction of the gold 1i4 alkoxide is carried out at 40-85°C.
加水分Ｈ反応に１４１いる水のイソブ０ビｔレアルコー
ル溶欣のａ度は１０〜６７％であり、この溶液を所定量
滴下した後、４０・−８５’Ｃで熟成させる）沈澱物の
乾燥後、４００−１（１００′Ｃの加熱処理を行なう。The degree of a of the isobutylene alcohol dissolved in water in the hydrohydration H reaction is 10 to 67%, and after dropping a predetermined amount of this solution, the precipitate is aged at 40.-85'C. After drying, heat treatment at 400-1 (100'C) is performed.
加熱処理した倣粉末にポリビニル７・レコール水溶液を
加えて１６粒し、ディスク状にプレス成形した後、１８
００”Ｃで２時間焼成した。焼成後のｙｓｍ体磁器の緻
細構造を走査電子顕微（Ａで観察した結果、アンチモン
アルコキシドの爪が０．１モル以下では、アンチモンを
ドープしないＢａ Ｔ ｉ ０３のように異常粒成した
粒子を含む二重構造を有しており、７ンチモンのドープ
蝋が増加すると共に焼成粒径が小さくなり、０．２５モ
ル％以りで１μｎ１以Ｆとなる。Polyvinyl 7/Lecole aqueous solution was added to the heat-treated imitation powder to form 16 grains, which were then press-molded into a disk shape.
The fine structure of the YSM body porcelain after firing was observed using a scanning electron microscope (A), and it was found that if the antimony alkoxide claw was less than 0.1 mol, antimony was not doped with Ba Ti 03. It has a double structure containing abnormally sized particles as shown in FIG.
又ｏ、ｉ〜０，２モル％では誘゛ル体が半６１本化する
ため、コンダノナとしＣは使用できない、゛砧成したデ
ィスク状試料の両面に４電極な焼付け−Ｃ誘電率とその
温度変化な測疋した。比較例な含む種々の組成から帰た
これらの結果な次表及び＠１図に示す。Also, at o, i ~ 0.2 mol%, the number of dielectric bodies becomes half 61, so conductor C cannot be used. I measured the temperature change. These results from various compositions, including comparative examples, are shown in the following table and Figure 1.
（以 ］Ｚ余白）
又加熱処理した徽粉末にポリビニルブチラードやＵジン
′ひの有機バインダ、分散剤１．有機浴媒な加えて混錬
し、ペースト化させる。このペーストと？Ｋｍを形成す
る白金ペーストとを交互にスクリーン印刷して第２図の
ように５ｈ→の誘電体／ｌｌ （１）・・・を形成Ｌ／
、１ａ ｏ ｏ ＝（２で２時間焼成して積層コンデ
ンサを得た５図において（２）は白金の内部電極、（３
）はお長の外部１ば極、（４）は無効の＠電体層である
。焼成後の９［Ｋ層（１）の厚みは１０μｍである。こ
のコンデンサの耐電圧特性も表に合わせて示す。表及び
第１図ｉ）＞ら明らかなように、試料番号１４〜１９の
組成から得た厚膜用誘電体は比誘電率が１６００以りで
、且つ１０μｍの膜厚にしたときにも１５０Ｖ以Ｊ二の
耐電圧を有する厚膜コンデンサを得ることができる。(Hereinafter, Z margin) In addition, the heat-treated powder is mixed with an organic binder such as polyvinyl butyrald or U-gin', and a dispersant 1. Add an organic bath medium and knead to form a paste. With this paste? Km and platinum paste are alternately screen printed to form 5h→dielectric/ll (1)... as shown in Figure 2 L/
, 1a o o = (2).
) is the main external 1st pole, and (4) is the invalid @electric layer. The thickness of the 9K layer (1) after firing is 10 μm. The withstand voltage characteristics of this capacitor are also shown in the table. As is clear from the table and FIG. A thick film capacitor having a withstand voltage of J2 can be obtained.
発明の効果
以し述べたように、本発明が提供する製造法によって作
成した誘電体粉末から得られる厚膜コンデンサは、従来
法によるものに比べ、耐電圧特性に優れており、比、％
［率も１６００以Ｊ：あるので、小型大谷屋にすること
ができる。Effects of the Invention As described above, the thick film capacitor obtained from the dielectric powder produced by the manufacturing method provided by the present invention has superior withstand voltage characteristics compared to those produced by the conventional method, and has a
[The rate is also over 1600 J:, so it can be made into a small Otani shop.
図面Ｃよ本発明の一実施例を示ずもので、第１図は本発
明の装造法によって作成した誘電体粉末を焼成したとき
の比誘電率と一２５°Ｃ〜＋８５゛Ｃの温度変化との関
係を示すグラフ、第２図は誘電体粉末を用いて作った＃
膜積層コンデノサの断面図である。
（１）・・・誘電体層、（２戸・・内部電極、（３）・
・・外部電極代理人 身 木 戊 弘Drawing C does not show an embodiment of the present invention, and Figure 1 shows the relative permittivity and temperature of -25°C to +85°C when dielectric powder produced by the manufacturing method of the present invention is fired. A graph showing the relationship with change, Figure 2 is # made using dielectric powder
FIG. 2 is a cross-sectional view of a membrane laminated capacitor. (1)...dielectric layer, (2 doors...internal electrode, (3)...
・・External electrode agent Hiroshi Miki
Claims (1)
を得る方法において、４８．００〜４９．９４モル％の
バリウムシア？レコキシ）’、４４．０〜４９．８１モ
ル％のチタノテトラプロポキシド、０．２５〜８モル％
のアンチモンアルコキシドをそれらの５倍以りの重量の
イソブロビルアルコールニ溶解、混むさせ、その混合浴
液を４０〜８５．’Ｃの温度に尿持し攪拌しながらその
溶故中に水−イツブａビルアＩレコール混合溶液（重檄
比１：１０〜２：１）を滴下し、アンチモンドープＢａ
Ｔ１０３ の沈澱物を生成させた後、水−アｐレコール
混合俗液から沈澱物を分能、乾燥させ、４００〜１００
０°Ｃの温度で加熱処理する厚膜用誘電体粉末の製造法
。 ２、 パリ’ｌムシアルコキシドがバリウムジブロボキ
シドでゐる特許請求の範囲第１項記載の厚膜用＠電体粉
末の製造法。 ８、 チタノテトラプロポキシドがチタノテトラプロポ
キシド又はチタンテトラブトキシドである特許請求の範
囲第１項記載の厚膜用誘電体粉末の製造法。 ４、 アンチモンアルコキシドがアンチそントリブトキ
シド又はアシチモンペンタブトキシドである特許請求の
範囲第１項記載の厚膜１１」誘電体粉末の製造法。[Claims] 1. A method for obtaining an oxide imitation powder by hydrolysis of gold scrap alkoxide, comprising 48.00 to 49.94 mol% of barium shea? lekoxy)', 44.0-49.81 mol% titanotetrapropoxide, 0.25-8 mol%
of antimony alkoxide is dissolved and mixed in isobrobyl alcohol of more than 5 times its weight, and the mixed bath liquid is made from 40 to 85. While stirring the urine at a temperature of 'C, a mixed solution of water and Itsubu A Birua I Recole (1:10 to 2:1 ratio) was added dropwise to the solution, and the antimony-doped Ba
After forming a precipitate of T103, the precipitate was separated from a water-aprecol mixture, dried, and heated to 400 to 100
A method for producing thick film dielectric powder by heat treatment at a temperature of 0°C. 2. The method for producing a thick film @electronic powder according to claim 1, wherein the paris alkoxide is barium dibroboxide. 8. The method for producing a dielectric powder for thick films according to claim 1, wherein the titanotetrapropoxide is titanotetrapropoxide or titanium tetrabutoxide. 4. The method for producing a thick film dielectric powder according to claim 1, wherein the antimony alkoxide is antimony tributoxide or acitimony pentabutoxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57149706A JPS5939724A (en) | 1982-08-27 | 1982-08-27 | Manufacture of dielectric powder for thick film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57149706A JPS5939724A (en) | 1982-08-27 | 1982-08-27 | Manufacture of dielectric powder for thick film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5939724A true JPS5939724A (en) | 1984-03-05 |
| JPS623770B2 JPS623770B2 (en) | 1987-01-27 |
Family
ID=15481030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57149706A Granted JPS5939724A (en) | 1982-08-27 | 1982-08-27 | Manufacture of dielectric powder for thick film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5939724A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186423A (en) * | 1984-10-04 | 1986-05-01 | Mitsubishi Mining & Cement Co Ltd | Preparation of compound bismuth oxide |
| US4929436A (en) * | 1987-03-26 | 1990-05-29 | Solvay & Cie (Societe Anonyme) | Process for the manufacture of a powder of mixed metal oxides, and mixed metal oxide powders |
| US5152974A (en) * | 1987-03-26 | 1992-10-06 | Solvay S.A. | Process for the manufacture of a powder of mixed metal oxides, and mixed metal oxide powders |
| WO2005093763A1 (en) * | 2004-03-29 | 2005-10-06 | Nippon Chemical Industrial Co., Ltd. | Inorganic dielectric powder for composite dielectric material and composite dielectric material |
| JP2011043116A (en) * | 2009-08-21 | 2011-03-03 | Toyota Motor Corp | Radial sound reducing structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197176U (en) * | 1987-06-08 | 1988-12-19 |
-
1982
- 1982-08-27 JP JP57149706A patent/JPS5939724A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186423A (en) * | 1984-10-04 | 1986-05-01 | Mitsubishi Mining & Cement Co Ltd | Preparation of compound bismuth oxide |
| US4929436A (en) * | 1987-03-26 | 1990-05-29 | Solvay & Cie (Societe Anonyme) | Process for the manufacture of a powder of mixed metal oxides, and mixed metal oxide powders |
| US5152974A (en) * | 1987-03-26 | 1992-10-06 | Solvay S.A. | Process for the manufacture of a powder of mixed metal oxides, and mixed metal oxide powders |
| WO2005093763A1 (en) * | 2004-03-29 | 2005-10-06 | Nippon Chemical Industrial Co., Ltd. | Inorganic dielectric powder for composite dielectric material and composite dielectric material |
| JP4747091B2 (en) * | 2004-03-29 | 2011-08-10 | 日本化学工業株式会社 | Composite dielectric material |
| JP2011043116A (en) * | 2009-08-21 | 2011-03-03 | Toyota Motor Corp | Radial sound reducing structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS623770B2 (en) | 1987-01-27 |
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