JPS5939664B2 - Method of forming a solar heat absorption film on the surface of metal foil - Google Patents
Method of forming a solar heat absorption film on the surface of metal foilInfo
- Publication number
- JPS5939664B2 JPS5939664B2 JP56158158A JP15815881A JPS5939664B2 JP S5939664 B2 JPS5939664 B2 JP S5939664B2 JP 56158158 A JP56158158 A JP 56158158A JP 15815881 A JP15815881 A JP 15815881A JP S5939664 B2 JPS5939664 B2 JP S5939664B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- metal foil
- reel
- vacuum chamber
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明は金属箔の表面に太陽熱選択吸収皮膜を形成す
る方法に関し、その目的とするところは、太陽光の干渉
作用が小さくて熱吸収率が大きな太陽熱選択吸収皮膜を
短時間でかつ簡単に形成することのできる方法を提供す
ることにある。[Detailed Description of the Invention] This invention relates to a method for forming a solar heat selective absorption film on the surface of metal foil, and its purpose is to form a solar heat selective absorption film that has a small solar interference effect and a high heat absorption rate. The object of the present invention is to provide a method that can be formed easily and in a short time.
以下、この発明を図面を参照しながら説明する。The present invention will be explained below with reference to the drawings.
図面において、１は真空槽、２は真空槽１内の上部にて
図面に向って右側に配置された第１リール、３は真空槽
１内の上部にて、図面に向って左側に、第１リール２と
同一水平面内でかつ第１リール２と平行に配置された第
２リール、４は第１リール２に装着されたコイル状金属
箔で、このコイル状金属箔４から第２９−ル３に金属箔
５が巻取られ、第２リール３への巻取りが完了すると、
今度は逆に第１リール２へ金属箔５が巻取られ、さらに
上記操作を繰り返しうるよ５になされている。In the drawing, 1 is a vacuum chamber, 2 is a first reel located at the upper part of the vacuum chamber 1 on the right side when facing the drawing, and 3 is a first reel located at the upper part of the vacuum chamber 1 on the left side when facing the drawing. A second reel 4 is arranged in the same horizontal plane as the first reel 2 and parallel to the first reel 2, and a coiled metal foil 4 is attached to the first reel 2. When the metal foil 5 is wound onto the second reel 3 and the winding onto the second reel 3 is completed,
This time, the metal foil 5 is wound onto the first reel 2 in the opposite manner, and the above operation can be repeated 5.
また、まずコイル状金属箔４が第２リール３へ装着され
た場合にも上記と同様である。Furthermore, the same applies when the coiled metal foil 4 is first attached to the second reel 3.
、６は真空槽１内の下部において、２つのリール２，３
の位置する水平面と平行な水平面内に配された偏心回転
板からなる移動装置で、真空槽１の外部から操作できる
ようになされている。, 6 are two reels 2 and 3 at the bottom of the vacuum chamber 1.
It is a moving device consisting of an eccentric rotary plate arranged in a horizontal plane parallel to the horizontal plane on which the vacuum chamber 1 is located, and can be operated from the outside of the vacuum chamber 1.
７，８は移動装置６の上面に載せられた蒸発源で、それ
ぞれ蒸着物質９，１０を備えている。Reference numerals 7 and 8 denote evaporation sources mounted on the upper surface of the moving device 6, and are provided with evaporation substances 9 and 10, respectively.
一方の蒸発源７の蒸着物質９としては得られる蒸着層が
熱吸収の働きをするＣｒ 、Ｎｉ 、Ｆｅ 、Ｃｏ 、
ＡＩ等の金属またはＳｉ、Ｇｅ等の半導体からなるもの
が用いられ、他方の蒸発源８の蒸着物質１０としては得
られる蒸着層が反射防止効果を有する誘電体層となるＣ
ｒ２Ｏ３、Ｎｉ２Ｏ３、Ａｌ２Ｏ３，５ｉ０２．ＳｉＯ
等の金属酸化物からなるものが用いられる。The evaporation material 9 of one evaporation source 7 is Cr, Ni, Fe, Co, etc. whose evaporation layer acts as a heat absorber.
A material made of a metal such as AI or a semiconductor such as Si or Ge is used, and the vapor deposition material 10 of the other evaporation source 8 is C, in which the resulting vapor deposition layer becomes a dielectric layer having an antireflection effect.
r2O3, Ni2O3, Al2O3, 5i02. SiO
Those made of metal oxides such as the following are used.
以下、金属または半導体からなる蒸着物質９を第１蒸着
物質、金属酸化物からなる蒸着物質１０を第２蒸着物質
といい、第１蒸着物質９を有する蒸発源７を第１蒸発源
、第２蒸着物質１０を有する蒸発源８を第２蒸発源とい
うものとする。Hereinafter, the evaporation material 9 made of a metal or a semiconductor will be referred to as a first evaporation material, the evaporation material 10 made of a metal oxide will be referred to as a second evaporation material, and the evaporation source 7 having the first evaporation material 9 will be referred to as a first evaporation source and a second evaporation source. The evaporation source 8 having the vapor deposition material 10 will be referred to as a second evaporation source.
また、画然発源７，８は、移動装置６の回転により画然
発源７゜８が順次両リール２，３間の所定の蒸発位置に
移動せしめられるようになされている。Furthermore, the evaporation sources 7 and 8 are configured such that the rotation of the moving device 6 causes the evaporation sources 7.8 to be sequentially moved to a predetermined evaporation position between the reels 2 and 3.
１１は上記蒸発位置に対応する位置において、移動装置
６のわずか下方に配置された蒸発源加熱装置である。Reference numeral 11 denotes an evaporation source heating device located slightly below the moving device 6 at a position corresponding to the evaporation position.
このような装置において、まず真空槽１内を真空状態と
する。In such an apparatus, first, the inside of the vacuum chamber 1 is brought into a vacuum state.
次に移動装置６を真空槽１の外部からの操作により回転
させて、第１蒸発源７を所定の蒸発位置まで移動させる
。Next, the moving device 6 is rotated by an operation from outside the vacuum chamber 1 to move the first evaporation source 7 to a predetermined evaporation position.
そして、第１リール２に装着されたコイル状金属箔４か
ら第２リール３へ金属箔５を巻取りながら、加熱装置１
１で第１蒸発源７を加熱し、第１蒸着物質９を金属箔５
に蒸着させる。Then, while winding the metal foil 5 from the coiled metal foil 4 mounted on the first reel 2 to the second reel 3, the heating device 1
1, the first evaporation source 7 is heated, and the first evaporation substance 9 is transferred to the metal foil 5.
Deposit on.
こうして、すべての金属箔５を第２リール３に巻取り、
金属箔５０表面の全体に第１蒸着物質９からなる蒸着層
を形成する。In this way, all the metal foils 5 are wound onto the second reel 3,
A vapor deposition layer made of the first vapor deposition substance 9 is formed on the entire surface of the metal foil 50 .
その後、移動装置６を回転させて、第１蒸発源７を蒸発
位置から他へ移動させるとともに、第２蒸発源８を所定
の蒸発位置まで移動させる。Thereafter, the moving device 6 is rotated to move the first evaporation source 7 from the evaporation position to another location, and move the second evaporation source 8 to a predetermined evaporation position.
そして、巻取り方向を逆向きにして第２リール３から第
１リール２へ金属箔５を巻取りながら、加熱装置１１で
第２蒸発源８を加熱し、第２蒸着物質１０を金属箔５に
蒸着させる。Then, while winding the metal foil 5 from the second reel 3 to the first reel 2 with the winding direction reversed, the second evaporation source 8 is heated by the heating device 11, and the second vapor deposition substance 10 is transferred to the metal foil 5. Deposit on.
すると、第１蒸着物質９からなる蒸着層の上に、第２蒸
着物質１０からなる蒸着層が形成され、被蒸着箔５０表
面に２層の蒸着層からなる太陽熱選択吸収皮膜が形成さ
れる。Then, a vapor deposited layer made of the second vapor deposited substance 10 is formed on the vapor deposited layer made of the first vapor deposited substance 9, and a solar heat selective absorption film made of two vapor deposited layers is formed on the surface of the vapor deposited foil 50.
次にこの発明の実施例を示す。Next, examples of this invention will be shown.
この実施例は図面に示す装置で行なわれたものである。This example was carried out using the apparatus shown in the drawings.
真空槽１内の第１リール２には、真空槽１内においてス
パッタクリーニング等により前処理が施されて表面の酸
化皮膜が除去されたコイル状アルミニウム箔４が装着さ
れている。A coiled aluminum foil 4 is attached to the first reel 2 in the vacuum chamber 1, and the oxide film on the surface thereof has been removed by pretreatment such as sputter cleaning in the vacuum chamber 1.
アルミニウム箔の幅は１００皿、厚さ０．１１長さ２０
ｍである。The width of the aluminum foil is 100 plates, the thickness is 0.11, and the length is 20.
It is m.
また、移動装置６上にＣｒからなる第１蒸着物質９を具
備せしめた第１蒸発源７と、Ｃｒ２Ｏ３からなる第２蒸
着物質１０を具備せしめた第２蒸発源８とを載置してお
く。Further, a first evaporation source 7 equipped with a first evaporation substance 9 made of Cr and a second evaporation source 8 equipped with a second evaporation substance 10 made of Cr2O3 are placed on the moving device 6. .
また、移動装置６とアルミニウム箔の巻取り面との距離
を２５０ｍｍとしてお（。In addition, the distance between the moving device 6 and the winding surface of the aluminum foil is set to 250 mm (.
そして、真空槽１内を真空状態とするとともに移動装置
６により第１蒸発源７を所定の蒸発位置まで移動させる
。Then, the inside of the vacuum chamber 1 is brought into a vacuum state, and the first evaporation source 7 is moved to a predetermined evaporation position by the moving device 6.
この状態で、真空槽１内に酸素ガスを３０ｍ１／ｍｉｎ
の速度で導入するとともに第１リール２から第２リール
３ ヘ０．３ ｍ ／ ｍｉｎの速度でアルミニウム箔
５を巻取りながら、蒸発源７を加熱装置１１で加熱し、
３０Ａ／ｓｅｃの速度でアルミニウム箔５にＣｒを蒸着
させた。In this state, oxygen gas is supplied into the vacuum chamber 1 at 30 m1/min.
while heating the evaporation source 7 with the heating device 11 while winding the aluminum foil 5 from the first reel 2 to the second reel 3 at a speed of 0.3 m/min,
Cr was deposited on the aluminum foil 5 at a rate of 30 A/sec.
ついで、ン真空槽１内への酸素ガスの導入を停止し、移
動装置６を回転させて、Ｃｒ２Ｏ３からなる第２蒸着物
質１０を備えた第２蒸発源８を蒸発位置まで移動させ、
第２リール３から第１リール２へ０．３ｍ／ｍｉｎの速
度でアルミニウム箔５を巻取りながら、；第２蒸発源８
を加熱装置１１で加熱し、アルミニウム箔５にＣｒ２Ｏ
３を蒸着させた。Next, the introduction of oxygen gas into the vacuum chamber 1 is stopped, and the moving device 6 is rotated to move the second evaporation source 8 equipped with the second evaporation substance 10 made of Cr2O3 to the evaporation position.
While winding up the aluminum foil 5 from the second reel 3 to the first reel 2 at a speed of 0.3 m/min; the second evaporation source 8;
is heated by the heating device 11, and Cr2O is applied to the aluminum foil 5.
3 was deposited.
このようにして、アルミニウム箔５０表面に形成した２
層の蒸着層からなる皮膜の太陽エネルギー吸収率は０．
９２、放射率は０．０５であり、太陽熱選択吸収；皮膜
として十分な性能を有する。In this way, the 2
The solar energy absorption rate of the film consisting of the vapor-deposited layers is 0.
92, emissivity is 0.05, selective absorption of solar heat; has sufficient performance as a film.
上述のように、この発明の方法によれば、真空槽１内を
一度真空状態にすれば、その真空状態を保ったままで、
金属箔５０表面に、金属または半導体からなる蒸着層お
よび金属酸化物からなる類１着層を前者を金属箔５側に
して備えた太陽熱選択吸収皮膜を形成することができる
。As described above, according to the method of the present invention, once the inside of the vacuum chamber 1 is brought to a vacuum state, the vacuum state is maintained and the vacuum state is maintained.
A solar heat selective absorption film can be formed on the surface of the metal foil 50, including a vapor deposited layer made of a metal or a semiconductor and a class 1 deposited layer made of a metal oxide, with the former facing the metal foil 5 side.
しかも、その作業を短時間で行うことが可能となる。Moreover, this work can be done in a short time.
また、この発明の方法により形成される太陽熱選択吸収
皮膜では、金属箔５側の金属または半導体からなるｉ蒸
着層が熱吸収の働きをし、表面側の金属酸化物からなる
蒸着層が太陽光の反射防止の働きをし、しかも金属箔５
側の蒸着層を形成した後一旦真空槽内の真空状態を解除
して表面側の蒸着層を形成する場合のように、２つの蒸
着層間に酸化皮膜が：形成されていないので、光の干渉
作用が少なくなって熱吸収率が大きくなる。In addition, in the solar heat selective absorption film formed by the method of the present invention, the i-evaporated layer made of metal or semiconductor on the metal foil 5 side functions to absorb heat, and the vapor-deposited layer made of metal oxide on the surface side acts as a heat absorber. The metal foil 5
Unlike when the vacuum state in the vacuum chamber is released after forming the side vapor deposition layer and forming the surface side vapor deposition layer, an oxide film is not formed between the two vapor deposition layers, so there is no light interference. The effect decreases and the heat absorption rate increases.
その上、２つの蒸着層間の密着性が良（、耐久性が向上
する。Moreover, the adhesion between the two deposited layers is good (and durability is improved).
図面はこの発明の方法を示す説明図である。
） １・・・真空槽、２・・・第１リール、３・・・
第２リール、４・・・コイル状金属箔、５・・・金属箔
、６・・・移動装置、７．８・・・蒸発源、９，１０・
・・蒸着物質。The drawings are explanatory diagrams showing the method of the present invention. ) 1...Vacuum chamber, 2...1st reel, 3...
Second reel, 4... Coiled metal foil, 5... Metal foil, 6... Moving device, 7.8... Evaporation source, 9, 10.
...Vapour-deposited substance.
Claims (1)
とを同一水平面内でかつ互いに平行に配置し、また真空
槽１内に、金属または半導体からなる蒸着物質９を有す
る蒸発源７および金属酸化物からなる蒸着物質１０を有
する蒸発源８と、これらの蒸発源１，８を、真空槽１内
の下部でかつ２つのリール２，３０間における所定の蒸
発位置に１つずつ順次移動せしめる移動装置６とを配置
し、２つのリール２，３のうちいずれか一方にコイル状
金属箔４を、両す−ル２，３間で金属箔５０巻取り方向
を交互に変更しうるように装着した後、真空槽１内を真
空状態とし、移動装置６により金属または半導体とから
なる蒸着物質９を有する蒸発源Ｔを上記蒸発位置まで移
動せしめ、この状態で一方のリールに装着されたコイル
状金属箔４から他方のリールに金属箔５を巻取りながら
蒸着物質９を金属箔５に蒸着させ、ついで蒸発源７を上
記蒸発位置から他へ移動せしめるとともに、金属酸化物
からなる蒸着物質１０を有する蒸発源８を上記蒸発位置
まで移動せしめ、この状態で巻取り方向を変えて元のリ
ールに金属箔５を巻取りながら蒸着物質１０を金属箔５
に蒸着させることを特徴とする、金属箔の表面に太陽熱
選択吸収皮膜を形成する方法。1 At the top of the vacuum chamber 1, the first reel 2 and the 29th reel 3 are installed.
are arranged in the same horizontal plane and parallel to each other, and an evaporation source 7 having an evaporation substance 9 made of a metal or a semiconductor and an evaporation source 8 having an evaporation substance 10 made of a metal oxide in the vacuum chamber 1; A moving device 6 is disposed to sequentially move the evaporation sources 1 and 8 one by one to predetermined evaporation positions in the lower part of the vacuum chamber 1 and between the two reels 2 and 30. After attaching the coiled metal foil 4 to one of the coils 2 and 3 so that the winding direction of the metal foil 50 can be changed alternately, the inside of the vacuum chamber 1 is evacuated, and the moving device 6, the evaporation source T having the evaporation substance 9 made of metal or semiconductor is moved to the evaporation position, and in this state, the metal foil 5 is wound from the coiled metal foil 4 attached to one reel to the other reel. Then, the evaporation source 7 is moved from the evaporation position to another location, and the evaporation source 8 containing the evaporation material 10 made of metal oxide is moved to the evaporation position, and this state is While changing the winding direction and winding the metal foil 5 onto the original reel, the vapor deposition material 10 is transferred to the metal foil 5.
A method for forming a selective solar heat absorption film on the surface of metal foil, the method comprising vapor depositing on the surface of metal foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56158158A JPS5939664B2 (en) | 1981-10-06 | 1981-10-06 | Method of forming a solar heat absorption film on the surface of metal foil |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56158158A JPS5939664B2 (en) | 1981-10-06 | 1981-10-06 | Method of forming a solar heat absorption film on the surface of metal foil |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5861273A JPS5861273A (en) | 1983-04-12 |
| JPS5939664B2 true JPS5939664B2 (en) | 1984-09-25 |
Family
ID=15665530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56158158A Expired JPS5939664B2 (en) | 1981-10-06 | 1981-10-06 | Method of forming a solar heat absorption film on the surface of metal foil |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5939664B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6294479B1 (en) | 1992-05-21 | 2001-09-25 | Nissin Electric Co., Ltd | Film forming method and apparatus |
| ATE326556T1 (en) * | 2002-03-15 | 2006-06-15 | Vhf Technologies Sa | APPARATUS AND METHOD FOR PRODUCING FLEXIBLE SEMICONDUCTOR DEVICES |
| US7507441B2 (en) | 2004-07-06 | 2009-03-24 | Hewlett-Packard Development Company, L.P. | Method for making a photonic structure |
-
1981
- 1981-10-06 JP JP56158158A patent/JPS5939664B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5861273A (en) | 1983-04-12 |
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